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LASERS, OPTICS, AND OPTOELECTRONICS

High-performance operation of single-mode terahertz quantum cascade lasers with metallic gratings

Lukas Mahler; Alessandro Tredicucci; Rüdeger Köhler; Fabio Beltram; Harvey E. Beere; Edmund H. Linfield; David A. Ritchie

Appl. Phys. Lett. 87, 181101 (2005) https://doi.org/10.1063/1.2120901

Abstract

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Bistable lasing in twin microdisk photonic molecules

Satoru Ishii; Toshihiko Baba

Appl. Phys. Lett. 87, 181102 (2005) https://doi.org/10.1063/1.2120906

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Observation of the interferences between the emitted beams in a 4Pi microscope by partial coherence interferometry

N. Sandeau; H. Giovannini; P.-F. Lenne; H. Rigneault

Appl. Phys. Lett. 87, 181103 (2005) https://doi.org/10.1063/1.2120908

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Subpicosecond saturation of intersubband absorption in $(Cd S ∕ Zn Se) ∕ Be Te$ quantum-well waveguides at telecommunication wavelength

R. Akimoto; B. S. Li; K. Akita; T. Hasama

Appl. Phys. Lett. 87, 181104 (2005) https://doi.org/10.1063/1.2123379

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Diffusion-controlled optical elements for optofluidics

Daniel B. Wolfe; Dmitri V. Vezenov; Brian T. Mayers; George M. Whitesides; Richard S. Conroy; Mara G. Prentiss

Appl. Phys. Lett. 87, 181105 (2005) https://doi.org/10.1063/1.2119412

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Line-defect-induced bending and splitting of self-collimated beams in two-dimensional photonic crystals

Sun-Goo Lee; Sang Soon Oh; Jae-Eun Kim; Hae Yong Park; Chul-Sik Kee

Appl. Phys. Lett. 87, 181106 (2005) https://doi.org/10.1063/1.2112186

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High-performance GaN-based light-emitting diode using high-transparency $Ni ∕ Au ∕ Al$ -doped ZnO composite contacts

Sung-Pyo Jung; Denise Ullery; Chien-Hung Lin; Henry P. Lee; Jae-Hong Lim; Dae-Kue Hwang; Ja-Yeon Kim; Eun-Jeong Yang; Seong-Ju Park

Appl. Phys. Lett. 87, 181107 (2005) https://doi.org/10.1063/1.2120913

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Dynamics of a high- $Q$ vertical-cavity organic laser

M. Koschorreck; R. Gehlhaar; V. G. Lyssenko; M. Swoboda; M. Hoffmann; K. Leo

Appl. Phys. Lett. 87, 181108 (2005) https://doi.org/10.1063/1.2125128

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Controlled transition between parametric and Raman oscillations in ultrahigh- $Q$ silica toroidal microcavities

Bumki Min; Lan Yang; Kerry Vahala

Appl. Phys. Lett. 87, 181109 (2005) https://doi.org/10.1063/1.2120921

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PLASMAS AND ELECTRICAL DISCHARGES

Enhancement of microarcing at a grounded chamber wall by nonvanishing ion sheath in a radio-frequency capacitive discharged plasma

Dixon T. K. Kwok; Yongbai Yin; Marcela M. M. Bilek; David McKenzie

Appl. Phys. Lett. 87, 181501 (2005) https://doi.org/10.1063/1.2126126

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Pressure-induced structural phase transition in $Ca Cr O_{4}$ ⁠: Evidence from Raman scattering studies

Y. W. Long; W. W. Zhang; L. X. Yang; Y. Yu; R. C. Yu; S. Ding; Y. L. Liu; C. Q. Jin

Appl. Phys. Lett. 87, 181901 (2005) https://doi.org/10.1063/1.2117624

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Improved GaN layer morphology by hydride vapor phase epitaxy on misoriented ${Al}_{2} O_{3}$ wafers

Ferdinand Scholz; Peter Brückner; Frank Habel; Matthias Peter; Klaus Köhler

Appl. Phys. Lett. 87, 181902 (2005) https://doi.org/10.1063/1.2120916

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Low-temperature pathways to Ge-rich ${Si}_{1 - x} {Ge}_{x}$ alloys via single-source hydride chemistry

C.-W. Hu; J. Menéndez; I. S. T. Tsong; J. Tolle; A. V. G. Chizmeshya; Cole Ritter; J. Kouvetakis

Appl. Phys. Lett. 87, 181903 (2005) https://doi.org/10.1063/1.2117620

Abstract

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Evidence of a rearrangement of the surface structure in titanium phthalocyanine sensors induced by the interaction with nitrogen oxides molecules

A. Generosi; B. Paci; V. Rossi Albertini; P. Perfetti; A. M. Paoletti; G. Pennesi; G. Rossi; R. Caminiti

Appl. Phys. Lett. 87, 181904 (2005) https://doi.org/10.1063/1.2119429

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Atomic scale morphology of thin GaNAs films: Effects of nitrogen content and growth temperature

W. M. McGee; P. A. Bone; R. S. Williams; T. S. Jones

Appl. Phys. Lett. 87, 181905 (2005) https://doi.org/10.1063/1.2120917

Abstract

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Effect of rapid thermal annealing on the ordering of AlInP grown by metal-organic vapor-phase epitaxy

Xiaohong Tang; Jinghua Zhao; Mee Koy Chin; Ting Mei; Zongyou Yin; Sentosa Deny; An Yan Du

Appl. Phys. Lett. 87, 181906 (2005) https://doi.org/10.1063/1.2120897

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Monodisperse spherical core-shell-structured phosphors obtained by functionalization of silica spheres with $Y_{2} O_{3} : {Eu}^{3 +}$ layers for field emission displays

H. Wang; C. K. Lin; X. M. Liu; J. Lin; M. Yu

Appl. Phys. Lett. 87, 181907 (2005) https://doi.org/10.1063/1.2123382

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Role of Sb in the growth and optical properties of $1.55 μ m$ $Ga In N (Sb) As ∕ Ga N As$ quantum-well structures by molecular-beam epitaxy

H. D. Sun; S. Calvez; M. D. Dawson; J. A. Gupta; G. I. Sproule; X. Wu; Z. R. Wasilewski

Appl. Phys. Lett. 87, 181908 (2005) https://doi.org/10.1063/1.2123383

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Photoinduced stress in a $Zn Se ∕ Ga As$ epilayer containing $90 ° α$ partial dislocations

Yutaka Ohno

Appl. Phys. Lett. 87, 181909 (2005) https://doi.org/10.1063/1.2123392

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Mechanisms of arsenic segregation to the ${Ni}_{2} Si ∕ {SiO}_{2}$ interface during ${Ni}_{2} Si$ formation

M. A. Pawlak; T. Janssens; A. Lauwers; A. Vantomme; W. Vandervorst; K. Maex; J. A. Kittl

Appl. Phys. Lett. 87, 181910 (2005) https://doi.org/10.1063/1.2125124

Abstract

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Electronic structure and optoelectronic properties of strained $InAsSb ∕ GaSb$ multiple quantum wells

Thomas Koprucki; Michael Baro; Uwe Bandelow; Tran Q. Tien; Fritz Weik; Jens W. Tomm; Markus Grau; Markus-Christian Amann

Appl. Phys. Lett. 87, 181911 (2005) https://doi.org/10.1063/1.2125126

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Combined hydride and metal organic vapor-phase epitaxy of GaN on sapphire

G. S. Solomon; D. J. Miller; M. Ramsteiner; A. Trampert; O. Brandt; K. H. Ploog

Appl. Phys. Lett. 87, 181912 (2005) https://doi.org/10.1063/1.2119408

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Third-order nonlinear optical properties of a cadmiun sulfide-dendrimer nanocomposite

Michael Etienne; Anna Biney; Ardie D. Walser; Roger Dorsinville; David L. V. Bauer; Valeria Balogh-Nair

Appl. Phys. Lett. 87, 181913 (2005) https://doi.org/10.1063/1.2123385

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Spectral-resolved microprobe cathodoluminescence investigations of Al-doped single-crystalline ${Ba}_{0.6} {Sr}_{0.4} {TiO}_{3}$ thin films

T. L. Chen; X. M. Li; K. S. Wan; W. L. Zhu; G. Pezzotti

Appl. Phys. Lett. 87, 181914 (2005) https://doi.org/10.1063/1.2125109

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Discovering inch-diameter metallic glasses in three-dimensional composition space

H. Ma; L. L. Shi; J. Xu; Y. Li; E. Ma

Appl. Phys. Lett. 87, 181915 (2005) https://doi.org/10.1063/1.2126794

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Comparison of morphology evolution of Ge(001) homoepitaxial films grown by pulsed laser deposition and molecular-beam epitaxy

Byungha Shin; John P. Leonard; James W. McCamy; Michael J. Aziz

Appl. Phys. Lett. 87, 181916 (2005) https://doi.org/10.1063/1.2108115

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Decreasing the hydrogen desorption temperature of $Li N H_{2}$ through doping: A first-principles study

H. M. Jin; P. Wu

Appl. Phys. Lett. 87, 181917 (2005) https://doi.org/10.1063/1.2056580

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The anomalous “stiffness” of biphenydimethyldithiol

D. Q. Feng; P. A. Dowben; R. Rajesh; J. Redepenning

Appl. Phys. Lett. 87, 181918 (2005) https://doi.org/10.1063/1.2120918

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Field emission from carbon layers containing very long and sparse nanotubes∕nanofilaments

A. L. Musatov; K. R. Izrael’yants; A. B. Ormont; A. V. Krestinin; N. A. Kiselev; V. V. Artemov; O. M. Zhigalina; Yu. V. Grigoriev

Appl. Phys. Lett. 87, 181919 (2005) https://doi.org/10.1063/1.2126797

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Charge injection and trapping in silicon nanocrystals

M. A. Rafiq; Y. Tsuchiya; H. Mizuta; S. Oda; Shigeyasu Uno; Z. A. K. Durrani; W. I. Milne

Appl. Phys. Lett. 87, 182101 (2005) https://doi.org/10.1063/1.2119431

Abstract

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Surfactant-mediated epitaxy of relaxed low-doped Ge films on Si(001) with low defect densities

T. F. Wietler; E. Bugiel; K. R. Hofmann

Appl. Phys. Lett. 87, 182102 (2005) https://doi.org/10.1063/1.2120900

Abstract

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Observation of interdot correlation in single pair of electromagnetically coupled quantum dots

Shohgo Yamauchi; Kazuhiro Komori; Isao Morohashi; Keishiro Goshima; Takeyoshi Sugaya; Toshihide Takagahara

Appl. Phys. Lett. 87, 182103 (2005) https://doi.org/10.1063/1.2120910

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Terahertz studies of the dielectric response and second-order phonons in a GaSe crystal

B. L. Yu; F. Zeng; V. Kartazayev; R. R. Alfano; Krishna C. Mandal

Appl. Phys. Lett. 87, 182104 (2005) https://doi.org/10.1063/1.2093944

Abstract

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Spatial resolution of ballistic electron emission microscopy measured on metal/quantum-well Schottky contacts

C. Tivarus; J. P. Pelz; M. K. Hudait; S. A. Ringel

Appl. Phys. Lett. 87, 182105 (2005) https://doi.org/10.1063/1.2120899

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Room-temperature single-electron effects in silicon nanocrystal memories

C. Pace; F. Crupi; S. Lombardo; C. Gerardi; G. Cocorullo

Appl. Phys. Lett. 87, 182106 (2005) https://doi.org/10.1063/1.2123377

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Programmable logic elements based on ferromagnetic nanodisks containing two antidots

M. Rahm; J. Stahl; D. Weiss

Appl. Phys. Lett. 87, 182107 (2005) https://doi.org/10.1063/1.2120914

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Formation of misfit dislocations at the thin strained Si∕strain-relaxed buffer interface

Roger Loo; Romain Delhougne; Matty Caymax; Mike Ries

Appl. Phys. Lett. 87, 182108 (2005) https://doi.org/10.1063/1.2120887

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Moisture induced surface polarization in a poly(4-vinyl phenol) dielectric in an organic thin-film transistor

Taeho Jung; Ananth Dodabalapur; Robert Wenz; Siddharth Mohapatra

Appl. Phys. Lett. 87, 182109 (2005) https://doi.org/10.1063/1.2117629

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Self-sustained current oscillations in superlattices and the van der Pol equation

Z. Z. Sun; Sun Yin; X. R. Wang; J. P. Cao; Y. P. Wang; Y. Q. Wang

Appl. Phys. Lett. 87, 182110 (2005) https://doi.org/10.1063/1.2126149

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GaInN quantum wells grown on facets of selectively grown GaN stripes

Barbara Neubert; Peter Brückner; Frank Habel; Ferdinand Scholz; Till Riemann; Jürgen Christen; Martin Beer; Joseph Zweck

Appl. Phys. Lett. 87, 182111 (2005) https://doi.org/10.1063/1.2126798

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Quantum interference effect in single $Pt (Ga) ∕ C$ nanowire

Z. M. Liao; J. Xu; Y. P. Song; Y. Zhang; Y. J. Xing; D. P. Yu

Appl. Phys. Lett. 87, 182112 (2005) https://doi.org/10.1063/1.2125108

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Angle-dependent photovoltaic effect in Al–Si multilayers

A. Kyarad; H. Lengfellner

Appl. Phys. Lett. 87, 182113 (2005) https://doi.org/10.1063/1.2126111

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Photoluminescence spectroscopy of bandgap reduction in dilute InNAs alloys

T. D. Veal; L. F. J. Piper; P. H. Jefferson; I. Mahboob; C. F. McConville; M. Merrick; T. J. C. Hosea; B. N. Murdin; M. Hopkinson

Appl. Phys. Lett. 87, 182114 (2005) https://doi.org/10.1063/1.2126117

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Traps in $AlGaN ∕ GaN ∕ SiC$ heterostructures studied by deep level transient spectroscopy

Z.-Q. Fang; D. C. Look; D. H. Kim; I. Adesida

Appl. Phys. Lett. 87, 182115 (2005) https://doi.org/10.1063/1.2126145

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Suppression of oxidation in nickel germanosilicides by Pt incorporation

Md. Anisur Rahman; Thomas Osipowicz; K. L. Pey; L. J. Jin; W. K. Choi; D. Z. Chi; D. A. Antoniadis; E. A. Fitzgerald; D. M. Isaacson

Appl. Phys. Lett. 87, 182116 (2005) https://doi.org/10.1063/1.2120902

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MAGNETISM AND SUPERCONDUCTIVITY

Bending of magnetic avalanches in $Mg B_{2}$ thin films

J. Albrecht; A. T. Matveev; M. Djupmyr; G. Schütz; B. Stuhlhofer; H.-U. Habermeier

Appl. Phys. Lett. 87, 182501 (2005) https://doi.org/10.1063/1.2123395

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Heat capacity at the field-induced ferromagnetic transition in ${Eu}_{0.58} {Sr}_{0.42} {MnO}_{3}$

G. J. Liu; J. R. Sun; Y. W. Xie; D. J. Wang; C. M. Xiong; H. W. Zhang; T. Y. Zhao; B. G. Shen

Appl. Phys. Lett. 87, 182502 (2005) https://doi.org/10.1063/1.2125127

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Weakening of charge order and antiferromagnetic to ferromagnetic switch over in $\Pr_{0.5} {Ca}_{0.5} {MnO}_{3}$ nanowires

S. S. Rao; K. N. Anuradha; S. Sarangi; S. V. Bhat

Appl. Phys. Lett. 87, 182503 (2005) https://doi.org/10.1063/1.2125129

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Effect of heating rates on superconducting properties of pure ${MgB}_{2}$ ⁠, carbon nanotube- and nano-SiC-doped in situ ${MgB}_{2} ∕ Fe$ wires

S. K. Chen; K. S. Tan; B. A. Glowacki; W. K. Yeoh; S. Soltanian; J. Horvat; S. X. Dou

Appl. Phys. Lett. 87, 182504 (2005) https://doi.org/10.1063/1.2126148

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Technique to measure sub-microsecond magnetic field pulses using magnetic (CoPt) thin films

W. Syed; R. B. van Dover; J. R. Petrie; M. D. Mitchell; D. A. Hammer

Appl. Phys. Lett. 87, 182505 (2005) https://doi.org/10.1063/1.2126109

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Tuning the ferromagnetic properties of hydrogenated GaMnAs

L. Thevenard; L. Largeau; O. Mauguin; A. Lemaître; B. Theys

Appl. Phys. Lett. 87, 182506 (2005) https://doi.org/10.1063/1.2126147

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DIELECTRICS AND FERROELECTRICITY

Colossal dielectric and electromechanical responses in self-assembled polymeric nanocomposites

Cheng Huang; Q. M. Zhang; Jiang Yu Li; Manese Rabeony

Appl. Phys. Lett. 87, 182901 (2005) https://doi.org/10.1063/1.2105997

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Structural, ferroelectric, dielectric, and magnetic properties of $Bi Fe O_{3} ∕ Pb ({Zr}_{0.5}, {Ti}_{0.5}) O_{3}$ multilayer films derived by chemical solution deposition

Y. W. Li; J. L. Sun; J. Chen; X. J. Meng; J. H. Chu

Appl. Phys. Lett. 87, 182902 (2005) https://doi.org/10.1063/1.2120907

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Frequency dispersion of ultrasonic velocity and attenuation of longitudinal waves propagating in $0.68 Pb ({Mg}_{1 ∕ 3} {Nb}_{2 ∕ 3}) O_{3} - 0.32 Pb Ti O_{3}$ single crystals poled along [001] and [110]

Rui Zhang; Wenhua Jiang; Wenwu Cao

Appl. Phys. Lett. 87, 182903 (2005) https://doi.org/10.1063/1.2120909

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Leakage current and breakdown electric-field studies on ultrathin atomic-layer-deposited ${Al}_{2} O_{3}$ on GaAs

H. C. Lin; P. D. Ye; G. D. Wilk

Appl. Phys. Lett. 87, 182904 (2005) https://doi.org/10.1063/1.2120904

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Piezoelectric properties of Li- and Ta-modified $(K_{0.5} {Na}_{0.5}) Nb O_{3}$ ceramics

Evelyn Hollenstein; Matthew Davis; Dragan Damjanovic; Nava Setter

Appl. Phys. Lett. 87, 182905 (2005) https://doi.org/10.1063/1.2123387

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Enhancement of spontaneous polarization in lead zirconate titanate thin films by ${Dy}^{3 +}$ substitution

Hiroshi Nakaki; Hiroshi Uchida; Seiichiro Koda; Shoji Okamoto; Hiroshi Funakubo; Ken Nishida; Takashi Katoda; Keisuke Saito

Appl. Phys. Lett. 87, 182906 (2005) https://doi.org/10.1063/1.2125123

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Comparison of electrical properties of $(100) ∕ (001)$ -oriented epitaxial $Pb ({Zr}_{0.35}, {Ti}_{0.65}) O_{3}$ thin films with the same (001) domain fraction grown on (100)Si and $(100) Sr Ti O_{3}$ substrates

Yong Kwan Kim; Hitoshi Morioka; Shoji Okamoto; Takayuki Watanabe; Shintaro Yokoyama; Akihiro Sumi; Hiroshi Funakubo; Keisuke Saito

Appl. Phys. Lett. 87, 182907 (2005) https://doi.org/10.1063/1.2117628

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Nitrogen doping and thermal stability in $Hf Si O_{x} N_{y}$ studied by photoemission and x-ray absorption spectroscopy

Satoshi Toyoda; Jun Okabayashi; Haruhiko Takahashi; Masaharu Oshima; Dong-Ick Lee; Shiyu Sun; Steven Sun; Piero A. Pianetta; Takashi Ando; Seiichi Fukuda

Appl. Phys. Lett. 87, 182908 (2005) https://doi.org/10.1063/1.2126112

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Observation of ${TO}_{1}$ soft mode in $Sr Ti O_{3}$ films by terahertz time domain spectroscopy

M. Misra; K. Kotani; I. Kawayama; H. Murakami; M. Tonouchi

Appl. Phys. Lett. 87, 182909 (2005) https://doi.org/10.1063/1.2128039

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$({La}_{0.8}, {Sr}_{0.2}) {MnO}_{3} ∕ Ti$ -metal foil substrate heterostructure effects on the ferroelectric and piezoelectric properties of lead zirconate titanate thin films

M. Es-Souni; A. Piorra; S. Habouti; S. Rudra Kumar; F. Faupel

Appl. Phys. Lett. 87, 182910 (2005) https://doi.org/10.1063/1.2126131

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Effects of ${ZrO}_{2}$ additions on the dielectric properties of ${CaCu}_{3} {Ti}_{4} O_{12}$

Eric A. Patterson; Seunghwa Kwon; Chien-Chih Huang; David P. Cann

Appl. Phys. Lett. 87, 182911 (2005) https://doi.org/10.1063/1.2126142

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Ferroelectric domain structure in epitaxial $Bi Fe O_{3}$ films

F. Zavaliche; R. R. Das; D. M. Kim; C. B. Eom; S. Y. Yang; P. Shafer; R. Ramesh

Appl. Phys. Lett. 87, 182912 (2005) https://doi.org/10.1063/1.2126804

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NANOSCALE SCIENCE AND DESIGN

Tip-enhanced fluorescence imaging of quantum dots

Fu Min Huang; Frederic Festy; David Richards

Appl. Phys. Lett. 87, 183101 (2005) https://doi.org/10.1063/1.2115073

Abstract

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Dielectrophoresis of nanoscale double-stranded DNA and humidity effects on its electrical conductivity

S. Tuukkanen; A. Kuzyk; J. J. Toppari; V. P. Hytönen; T. Ihalainen; P. Törmä

Appl. Phys. Lett. 87, 183102 (2005) https://doi.org/10.1063/1.2117626

Abstract

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Supplementary Material

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Growth mechanism of stacked-cone and smooth-surface GaN nanowires

X. M. Cai; A. B. Djurišić; M. H. Xie; C. S. Chiu; S. Gwo

Appl. Phys. Lett. 87, 183103 (2005) https://doi.org/10.1063/1.2126118

Abstract

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Probing the excited state distributions of $Cd Te ∕ Zn Te$ self-assembled quantum dots using resonant Raman scattering

A. Abdi; T. B. Hoang; S. Mackowski; L. M. Smith; H. E. Jackson; J. M. Yarrison-Rice; J. Kossut; G. Karczewski

Appl. Phys. Lett. 87, 183104 (2005) https://doi.org/10.1063/1.2123378

Abstract

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Field-effect transistors with layer-by-layer self-assembled nanoparticle thin films as channel and gate dielectric

Tianhong Cui; Yi Liu; Mo Zhu

Appl. Phys. Lett. 87, 183105 (2005) https://doi.org/10.1063/1.2123390

Abstract

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Fabrication and application of long strands of silicon nanowires as sensors for bovine serum albumin detection

Ming-Wang Shao; Hui Yao; Ming-Liang Zhang; Ning-Bew Wong; Yue-Yue Shan; Shuit-Tong Lee

Appl. Phys. Lett. 87, 183106 (2005) https://doi.org/10.1063/1.2123393

Abstract

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Growth of segmented ZnS nanocones induced by regular occurrence of twins structure

Y. Li; L. H. Qian; W. F. Li; C. N. Yang; X. L. Ma

Appl. Phys. Lett. 87, 183107 (2005) https://doi.org/10.1063/1.2106026

Abstract

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Growth of AlGaN nanowires by metalorganic chemical vapor deposition

J. Su; M. Gherasimova; G. Cui; H. Tsukamoto; J. Han; T. Onuma; M. Kurimoto; S. F. Chichibu; C. Broadbridge; Y. He; A. V. Nurmikko

Appl. Phys. Lett. 87, 183108 (2005) https://doi.org/10.1063/1.2126113

Abstract

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Radial ZnO nanowire nucleation on amorphous carbons

Y. H. Yang; C. X. Wang; B. Wang; Z. Y. Li; J. Chen; D. H. Chen; N. S. Xu; G. W. Yang; J. B. Xu

Appl. Phys. Lett. 87, 183109 (2005) https://doi.org/10.1063/1.2126139

Abstract

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Room-temperature $InAlAs ∕ InGaAs ∕ InP$ planar resonant tunneling-coupled transistor

Jeong S. Moon; Rajesh Rajavel; Steven Bui; Danny Wong; David H. Chow

Appl. Phys. Lett. 87, 183110 (2005) https://doi.org/10.1063/1.2126108

Abstract

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Efficient aminosilane adhesion promoter for soft nanoimprint on GaAs

Pascal Gallo; Benoît Viallet; Emmanuelle Daran; Chantal Fontaine

Appl. Phys. Lett. 87, 183111 (2005) https://doi.org/10.1063/1.2123386

Abstract

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DEVICE PHYSICS

Organic field-effect transistors based on a crosslinkable polymer blend as the semiconducting layer

He Yan; Myung-Han Yoon; Antonio Facchetti; Tobin J. Marks

Appl. Phys. Lett. 87, 183501 (2005) https://doi.org/10.1063/1.2119418

Abstract

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Pentacene transistor encapsulated by poly-para-xylylene behaving as gate dielectric insulator and passivation film

Kazuhito Tsukagoshi; Iwao Yagi; Kunji Shigeto; Keiichi Yanagisawa; Jun Tanabe; Yoshinobu Aoyagi

Appl. Phys. Lett. 87, 183502 (2005) https://doi.org/10.1063/1.2120894

Abstract

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Coordination-complex polymer as an organic conductor for organic light-emitting diodes

Soon-Min Seo; Joon H. Kim; Jeong-Yong Park; Hong H. Lee

Appl. Phys. Lett. 87, 183503 (2005) https://doi.org/10.1063/1.2123388

Abstract

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Controlled enhancement of the electron field-effect mobility of $F_{16} Cu Pc$ thin-film transistors by use of functionalized $Si O_{2}$ substrates

Dimas G. de Oteyza; Esther Barrena; J. Oriol Ossó; Helmut Dosch; Stephan Meyer; Jens Pflaum

Appl. Phys. Lett. 87, 183504 (2005) https://doi.org/10.1063/1.2117622

Abstract

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Defect energy levels in ${HfO}_{2}$ high-dielectric-constant gate oxide

K. Xiong; J. Robertson; M. C. Gibson; S. J. Clark

Appl. Phys. Lett. 87, 183505 (2005) https://doi.org/10.1063/1.2119425

Abstract

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Modal response and frequency shift of the cantilever in a noncontact atomic force microscope

Wei L. Wang; S. Jack Hu

Appl. Phys. Lett. 87, 183506 (2005) https://doi.org/10.1063/1.2123391

Abstract

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Relating random telegraph signal noise in metal-oxide-semiconductor transistors to interface trap energy distribution

A. P. van der Wel; E. A. M. Klumperink; E. Hoekstra; B. Nauta

Appl. Phys. Lett. 87, 183507 (2005) https://doi.org/10.1063/1.2128056

Abstract

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APPLIED BIOPHYSICS

Convective polymerase chain reaction around micro immersion heater

Martin Hennig; Dieter Braun

Appl. Phys. Lett. 87, 183901 (2005) https://doi.org/10.1063/1.2051787

Abstract

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INTERDISCIPLINARY AND GENERAL PHYSICS

Modeling of electric energy harvesting using piezoelectric windmill

Shashank Priya

Appl. Phys. Lett. 87, 184101 (2005) https://doi.org/10.1063/1.2119410

Abstract

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Self-consistent calibration of photoluminescence and photoconductance lifetime measurements

T. Trupke; R. A. Bardos; M. D. Abbott

Appl. Phys. Lett. 87, 184102 (2005) https://doi.org/10.1063/1.2119411

Abstract

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Time domain analysis of coherent terahertz synchrotron radiation

H.-W. Hübers; A. Semenov; K. Holldack; U. Schade; G. Wüstefeld; G. Gol’tsman

Appl. Phys. Lett. 87, 184103 (2005) https://doi.org/10.1063/1.2120896

Abstract

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III-nitrides on oxygen- and zinc-face ZnO substrates

Gon Namkoong; Shawn Burnham; Kyoung-Keun Lee; Elaissa Trybus; W. Alan Doolittle; Maria Losurdo; Pio Capezzuto; Giovanni Bruno; Bill Nemeth; Jeff Nause

Appl. Phys. Lett. 87, 184104 (2005) https://doi.org/10.1063/1.2120912

Abstract

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Scanning thermal imaging of microelectronic circuits with a fluorescent nanoprobe

Lionel Aigouy; Gilles Tessier; Michel Mortier; Benoît Charlot

Appl. Phys. Lett. 87, 184105 (2005) https://doi.org/10.1063/1.2123384

Abstract

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High-bandwidth radio frequency Coulter counter

D. K. Wood; S.-H. Oh; S.-H. Lee; H. T. Soh; A. N. Cleland

Appl. Phys. Lett. 87, 184106 (2005) https://doi.org/10.1063/1.2125111

Abstract

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Observation of ice nucleation in acoustically levitated water drops

Y. J. Lü; W. J. Xie; B. Wei

Appl. Phys. Lett. 87, 184107 (2005) https://doi.org/10.1063/1.2126801

Abstract

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Issues

LASERS, OPTICS, AND OPTOELECTRONICS

PLASMAS AND ELECTRICAL DISCHARGES

STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

ELECTRONIC TRANSPORT AND SEMICONDUCTORS

MAGNETISM AND SUPERCONDUCTIVITY

DIELECTRICS AND FERROELECTRICITY

NANOSCALE SCIENCE AND DESIGN

DEVICE PHYSICS

APPLIED BIOPHYSICS

INTERDISCIPLINARY AND GENERAL PHYSICS

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