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LASERS, OPTICS, AND OPTOELECTRONICS

Thermal inhibition of high-power second-harmonic generation in periodically poled $Li Nb O_{3}$ and $Li Ta O_{3}$ crystals

Oleg A. Louchev; Nan Ei Yu; Sunao Kurimura; Kenji Kitamura

Appl. Phys. Lett. 87, 131101 (2005) https://doi.org/10.1063/1.2056593

Abstract

View articletitled, Thermal inhibition of high-power second-harmonic generation in periodically poled <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Li</mi><mi mathvariant="normal">Nb</mi><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub></mrow></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Li</mi><mi mathvariant="normal">Ta</mi><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub></mrow></math> crystals

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Bends and splitters in metal-dielectric-metal subwavelength plasmonic waveguides

Georgios Veronis; Shanhui Fan

Appl. Phys. Lett. 87, 131102 (2005) https://doi.org/10.1063/1.2056594

Abstract

View articletitled, Bends and splitters in metal-dielectric-metal subwavelength plasmonic waveguides

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Room temperature continuous wave operation of a heterojunction bipolar transistor laser

M. Feng; N. Holonyak, Jr.; G. Walter; R. Chan

Appl. Phys. Lett. 87, 131103 (2005) https://doi.org/10.1063/1.2058213

Abstract

View articletitled, Room temperature continuous wave operation of a heterojunction bipolar transistor laser

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Waveguide array-grating compressors

Sotiris Droulias; Kyriakos Hizanidis; Demetrios N. Christodoulides; Roberto Morandotti

Appl. Phys. Lett. 87, 131104 (2005) https://doi.org/10.1063/1.2056578

Abstract

View articletitled, Waveguide array-grating compressors

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Picosecond time-resolved imaging by nonscanning fluorescence Kerr gate microscope

Tatsuya Fujino; Takuya Fujima; Tahei Tahara

Appl. Phys. Lett. 87, 131105 (2005) https://doi.org/10.1063/1.2067694

Abstract

View articletitled, Picosecond time-resolved imaging by nonscanning fluorescence Kerr gate microscope

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Efficient second harmonic generation from large band gap II-VI semiconductor photonic crystal

H. Yang; P. Xie; S. K. Chan; Z. Q. Zhang; I. K. Sou; G. K. L. Wong; K. S. Wong

Appl. Phys. Lett. 87, 131106 (2005) https://doi.org/10.1063/1.2061864

Abstract

View articletitled, Efficient second harmonic generation from large band gap II-VI semiconductor photonic crystal

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Curved-microfiber photon coupling for photonic crystal light emitter

In-Kag Hwang; Sun-Kyung Kim; Jin-Kyu Yang; Se-Heon Kim; Sang Hoon Lee; Yong-Hee Lee

Appl. Phys. Lett. 87, 131107 (2005) https://doi.org/10.1063/1.2061851

Abstract

View articletitled, Curved-microfiber photon coupling for photonic crystal light emitter

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PLASMAS AND ELECTRICAL DISCHARGES

Pseudospark electron beam as an excitation source for extreme ultraviolet generation

Chunqi Jiang; Andras Kuthi; Martin A. Gundersen; Werner Hartmann

Appl. Phys. Lett. 87, 131501 (2005) https://doi.org/10.1063/1.2053352

Abstract

View articletitled, Pseudospark electron beam as an excitation source for extreme ultraviolet generation

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Effect of multistep ionizations on the electron temperature in an argon inductively coupled plasma

Min-Hyong Lee; Chin-Wook Chung

Appl. Phys. Lett. 87, 131502 (2005) https://doi.org/10.1063/1.2056592

Abstract

View articletitled, Effect of multistep ionizations on the electron temperature in an argon inductively coupled plasma

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Ion mass dependence of the etch yield of $Sr Ti O_{3}$ films in reactive plasmas

O. Langlois; L. Stafford; J. Margot; M. Chaker

Appl. Phys. Lett. 87, 131503 (2005) https://doi.org/10.1063/1.2056611

Abstract

View articletitled, Ion mass dependence of the etch yield of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Sr</mi><mi mathvariant="normal">Ti</mi><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub></mrow></math> films in reactive plasmas

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Mechanisms for sustaining the free-standing plasma beam

Kh. Tarnev; J. Engemann; D. Korzec

Appl. Phys. Lett. 87, 131504 (2005) https://doi.org/10.1063/1.2067696

Abstract

View articletitled, Mechanisms for sustaining the free-standing plasma beam

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

A technique to study the lattice location of hydrogen atoms in silicon by channeling elastic recoil detection analysis

Lin Shao; Yongqiang Wang; J. K. Lee; M. Nastasi; Phillip E. Thompson; N. David Theodore; J. W. Mayer

Appl. Phys. Lett. 87, 131901 (2005) https://doi.org/10.1063/1.2058200

Abstract

View articletitled, A technique to study the lattice location of hydrogen atoms in silicon by channeling elastic recoil detection analysis

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Atomic-scale structure of self-assembled In(Ga)As quantum rings in GaAs

P. Offermans; P. M. Koenraad; J. H. Wolter; D. Granados; J. M. García; V. M. Fomin; V. N. Gladilin; J. T. Devreese

Appl. Phys. Lett. 87, 131902 (2005) https://doi.org/10.1063/1.2058212

Abstract

View articletitled, Atomic-scale structure of self-assembled In(Ga)As quantum rings in GaAs

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Direct experimental observation of a general pattern at the beginning of brittle fracture

Francisco G. Emmerich

Appl. Phys. Lett. 87, 131903 (2005) https://doi.org/10.1063/1.2042538

Abstract

View articletitled, Direct experimental observation of a general pattern at the beginning of brittle fracture

Supplementary Material

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Microphotoluminescence mapping of laterally overgrown GaN layers on patterned Si (111) substrates

L. Macht; P. R. Hageman; S. Haffouz; P. K. Larsen

Appl. Phys. Lett. 87, 131904 (2005) https://doi.org/10.1063/1.2042546

Abstract

View articletitled, Microphotoluminescence mapping of laterally overgrown GaN layers on patterned Si (111) substrates

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Effect of Brownian coagulation on the microstructure evolution in rapidly solidified immiscible alloys

J. Z. Zhao; L. L. Gao; J. He

Appl. Phys. Lett. 87, 131905 (2005) https://doi.org/10.1063/1.2058208

Abstract

View articletitled, Effect of Brownian coagulation on the microstructure evolution in rapidly solidified immiscible alloys

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Observation of nanoindentation rosettes on {0001}ZnO using scanning Kelvin probe microscopy

M. J. Klopfstein; D. A. Lucca

Appl. Phys. Lett. 87, 131906 (2005) https://doi.org/10.1063/1.2058201

Abstract

View articletitled, Observation of nanoindentation rosettes on {0001}ZnO using scanning Kelvin probe microscopy

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Vacancy distribution around isolated implantation sites

B. Ittermann; M. Füllgrabe; H.-J. Stöckmann; F. Kroll; D. Peters; H. Ackermann

Appl. Phys. Lett. 87, 131907 (2005) https://doi.org/10.1063/1.2061869

Abstract

View articletitled, Vacancy distribution around isolated implantation sites

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Interface structure and phase of epitaxial ${SrTiO}_{3}$ (110) thin films grown directly on silicon

J. H. Hao; J. Gao; Z. Wang; D. P. Yu

Appl. Phys. Lett. 87, 131908 (2005) https://doi.org/10.1063/1.2061859

Abstract

View articletitled, Interface structure and phase of epitaxial <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>SrTiO</mi><mn>3</mn></msub></mrow></math> (110) thin films grown directly on silicon

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Infrared-to-visible upconversion in thin films of $LaEr {({MoO}_{4})}_{3}$

D. M. Bubb; D. Cohen; S. B. Qadri

Appl. Phys. Lett. 87, 131909 (2005) https://doi.org/10.1063/1.2067712

Abstract

View articletitled, Infrared-to-visible upconversion in thin films of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>LaEr</mi><mrow><msub><mrow><mo>(</mo><msub><mi>MoO</mi><mn>4</mn></msub><mo>)</mo></mrow><mn>3</mn></msub></mrow></mrow></math>

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Global method for measuring stress in polymer fibers at elevated temperatures

G. Anagnostopoulos; A. G. Andreopoulos; J. Parthenios; C. Galiotis

Appl. Phys. Lett. 87, 131910 (2005) https://doi.org/10.1063/1.2067707

Abstract

View articletitled, Global method for measuring stress in polymer fibers at elevated temperatures

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Polychromatic light emission from single InGaN quantum wells grown on pyramidal GaN facets

S. Srinivasan; M. Stevens; F. A. Ponce; T. Mukai

Appl. Phys. Lett. 87, 131911 (2005) https://doi.org/10.1063/1.2067693

Abstract

View articletitled, Polychromatic light emission from single InGaN quantum wells grown on pyramidal GaN facets

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Room-temperature stimulated emission from microcrystalline $Cs Pb {Cl}_{3}$ films

S. Kondo; H. Ohsawa; T. Saito; H. Asada; H. Nakagawa

Appl. Phys. Lett. 87, 131912 (2005) https://doi.org/10.1063/1.2067700

Abstract

View articletitled, Room-temperature stimulated emission from microcrystalline <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Cs</mi><mi mathvariant="normal">Pb</mi><msub><mi mathvariant="normal">Cl</mi><mn>3</mn></msub></mrow></math> films

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Band gap reduction in GaNSb alloys due to the anion mismatch

T. D. Veal; L. F. J. Piper; S. Jollands; B. R. Bennett; P. H. Jefferson; P. A. Thomas; C. F. McConville; B. N. Murdin; L. Buckle; G. W. Smith; T. Ashley

Appl. Phys. Lett. 87, 132101 (2005) https://doi.org/10.1063/1.2058224

Abstract

View articletitled, Band gap reduction in GaNSb alloys due to the anion mismatch

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Very high time-of-flight mobility in the columnar phases of a discotic liquid crystal

Hiroaki Iino; Jun-ichi Hanna; Richard J. Bushby; Bijan Movaghar; Benjamin J. Whitaker; Michael J. Cook

Appl. Phys. Lett. 87, 132102 (2005) https://doi.org/10.1063/1.2056608

Abstract

View articletitled, Very high time-of-flight mobility in the columnar phases of a discotic liquid crystal

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Nonlinear absorption edge properties of $1.3 - μ m$ GaInNAs saturable absorbers

R. Grange; A. Rutz; V. Liverini; M. Haiml; S. Schön; U. Keller

Appl. Phys. Lett. 87, 132103 (2005) https://doi.org/10.1063/1.2058216

Abstract

View articletitled, Nonlinear absorption edge properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>1.3</mn><mtext>-</mtext><mi>μ</mi><mi mathvariant="normal">m</mi></mrow></math> GaInNAs saturable absorbers

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Exposition of semiconducting and ferromagnetic properties of pulsed-laser-deposited thin films of $La {Fe}_{1 - x} {Ni}_{x} O_{3}$ (⁠ $x = 0.3$ ⁠, 0.4, and 0.5)

R. J. Choudhary; Ravi Kumar; M. Wasi Khan; J. P. Srivastava; S. I. Patil; S. K. Arora; I. V. Shvets

Appl. Phys. Lett. 87, 132104 (2005) https://doi.org/10.1063/1.2058218

Abstract

View articletitled, Exposition of semiconducting and ferromagnetic properties of pulsed-laser-deposited thin films of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">La</mi><msub><mi mathvariant="normal">Fe</mi><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub><msub><mi mathvariant="normal">Ni</mi><mi>x</mi></msub><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub></mrow></math> (⁠<math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>x</mi><mo>=</mo><mn>0.3</mn></mrow></math>⁠, 0.4, and 0.5)

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Relation between carrier mobility and cell performance in bulk heterojunction solar cells consisting of soluble polythiophene and fullerene derivatives

Jun-ichi Nakamura; Kazuhiko Murata; Kohshin Takahashi

Appl. Phys. Lett. 87, 132105 (2005) https://doi.org/10.1063/1.2058210

Abstract

View articletitled, Relation between carrier mobility and cell performance in bulk heterojunction solar cells consisting of soluble polythiophene and fullerene derivatives

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Si-doped ${Al}_{x} {Ga}_{1 - x} N (0.56 ⩽ \times ⩽ 1)$ layers grown by molecular beam epitaxy with ammonia

B. Borisov; V. Kuryatkov; Yu. Kudryavtsev; R. Asomoza; S. Nikishin; D. Y. Song; M. Holtz; H. Temkin

Appl. Phys. Lett. 87, 132106 (2005) https://doi.org/10.1063/1.2061856

Abstract

View articletitled, Si-doped <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>Al</mi><mi>x</mi></msub><msub><mi>Ga</mi><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub><mi mathvariant="normal">N</mi><mrow><mo>(</mo><mn>0.56</mn><mo>⩽</mo><mo>×</mo><mo>⩽</mo><mn>1</mn><mo>)</mo></mrow></mrow></math> layers grown by molecular beam epitaxy with ammonia

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Low loss GaN at $1550 nm$

Reinhard Geiss; Aref Chowdhury; Chad M. Staus; Hock M. Ng; Sung S. Park; Jai Y. Han

Appl. Phys. Lett. 87, 132107 (2005) https://doi.org/10.1063/1.2061868

Abstract

View articletitled, Low loss GaN at <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>1550</mn><mspace width="0.3em"></mspace><mi>nm</mi></mrow></math>

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Direct-current substrate bias effects on amorphous silicon sputter-deposited films for thin film transistor fabrication

Seung-Ik Jun; Philip D. Rack; Timothy E. McKnight; Anatoli V. Melechko; Michael L. Simpson

Appl. Phys. Lett. 87, 132108 (2005) https://doi.org/10.1063/1.2061860

Abstract

View articletitled, Direct-current substrate bias effects on amorphous silicon sputter-deposited films for thin film transistor fabrication

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MAGNETISM AND SUPERCONDUCTIVITY

Angular dependence of the magnetization reversal in exchange-biased $Fe ∕ Mn F_{2}$

Elke Arenholz; Kai Liu

Appl. Phys. Lett. 87, 132501 (2005) https://doi.org/10.1063/1.2058207

Abstract

View articletitled, Angular dependence of the magnetization reversal in exchange-biased <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Fe</mi><mo>∕</mo><mi mathvariant="normal">Mn</mi><msub><mi mathvariant="normal">F</mi><mn>2</mn></msub></mrow></math>

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Epitaxial nanostructure and defects effective for pinning in $Y (RE) {Ba}_{2} {Cu}_{3} O_{7 - x}$ coated conductors

Y. Yamada; K. Takahashi; H. Kobayashi; M. Konishi; T. Watanabe; A. Ibi; T. Muroga; S. Miyata; T. Kato; T. Hirayama; Y. Shiohara

Appl. Phys. Lett. 87, 132502 (2005) https://doi.org/10.1063/1.2061874

Abstract

View articletitled, Epitaxial nanostructure and defects effective for pinning in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Y</mi><mrow><mo>(</mo><mi>RE</mi><mo>)</mo></mrow><msub><mi mathvariant="normal">Ba</mi><mn>2</mn></msub><msub><mi mathvariant="normal">Cu</mi><mn>3</mn></msub><msub><mi mathvariant="normal">O</mi><mrow><mn>7</mn><mo>−</mo><mi>x</mi></mrow></msub></mrow></math> coated conductors

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Inspection of magnetic semiconductor and clustering structure in CoFe-doped ZnO films by bias-dependent impedance spectroscopy

J. C. A. Huang; H. S. Hsu

Appl. Phys. Lett. 87, 132503 (2005) https://doi.org/10.1063/1.2058211

Abstract

View articletitled, Inspection of magnetic semiconductor and clustering structure in CoFe-doped ZnO films by bias-dependent impedance spectroscopy

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DIELECTRICS AND FERROELECTRICITY

Aspect ratio dependence of electromechanical coupling coefficient of piezoelectric resonators

Moojoon Kim; Jungsoon Kim; Wenwu Cao

Appl. Phys. Lett. 87, 132901 (2005) https://doi.org/10.1063/1.2053366

Abstract

View articletitled, Aspect ratio dependence of electromechanical coupling coefficient of piezoelectric resonators

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Ferroelectric properties of sol-gel derived Ca modified ${PbZr}_{0.52} {Ti}_{0.48} O_{3}$ films

S. Ezhilvalavan; Victor D. Samper

Appl. Phys. Lett. 87, 132902 (2005) https://doi.org/10.1063/1.2041820

Abstract

View articletitled, Ferroelectric properties of sol-gel derived Ca modified <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>PbZr</mi><mn>0.52</mn></msub><msub><mi>Ti</mi><mn>0.48</mn></msub><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub></mrow></math> films

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Effect of nitrogen incorporation on improvement of leakage properties in high-k $Hf O_{2}$ capacitors treated by $N_{2}$ -plasma

Nak-Jin Seong; Soon-Gil Yoon; Seung-Jin Yeom; Hyun-Kyung Woo; Deok-Sin Kil; Jae-Sung Roh; Hyun-Chul Sohn

Appl. Phys. Lett. 87, 132903 (2005) https://doi.org/10.1063/1.2053369

Abstract

View articletitled, Effect of nitrogen incorporation on improvement of leakage properties in high-k <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Hf</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></math> capacitors treated by <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">N</mi><mn>2</mn></msub></math>-plasma

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Electrical properties of ultrathin ${HfO}_{2}$ films for replacement metal gate transistors, fabricated by atomic layer deposition using $Hf {(N ({CH}_{3}) (C_{2} H_{5}))}_{4}$ and $O_{3}$

Satoshi Kamiyama; Takayoshi Miura; Yasuo Nara

Appl. Phys. Lett. 87, 132904 (2005) https://doi.org/10.1063/1.2072827

Abstract

View articletitled, Electrical properties of ultrathin <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>HfO</mi><mn>2</mn></msub></mrow></math> films for replacement metal gate transistors, fabricated by atomic layer deposition using <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>Hf</mi><mrow><msub><mrow><mo>(</mo><mi mathvariant="normal">N</mi><mrow><mo>(</mo><msub><mi>CH</mi><mn>3</mn></msub><mo>)</mo></mrow><mrow><mo>(</mo><msub><mi mathvariant="normal">C</mi><mn>2</mn></msub><msub><mi mathvariant="normal">H</mi><mn>5</mn></msub><mo>)</mo></mrow><mo>)</mo></mrow><mn>4</mn></msub></mrow></mrow></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub></mrow></math>

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NANOSCALE SCIENCE AND DESIGN

Nanometer-scale mechanical properties probed by two-dimensional dynamic force spectroscopy with rigid cantilever

M. Brun; S. Decossas; F. Triozon; R. Rannou; B. Grévin

Appl. Phys. Lett. 87, 133101 (2005) https://doi.org/10.1063/1.1992670

Abstract

View articletitled, Nanometer-scale mechanical properties probed by two-dimensional dynamic force spectroscopy with rigid cantilever

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Quantum dot formation on a strain-patterned epitaxial thin film

S. M. Wise; J. S. Lowengrub; J. S. Kim; K. Thornton; P. W. Voorhees; W. C. Johnson

Appl. Phys. Lett. 87, 133102 (2005) https://doi.org/10.1063/1.2061852

Abstract

View articletitled, Quantum dot formation on a strain-patterned epitaxial thin film

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In situ infrared spectroscopy of hafnium oxide growth on hydrogen-terminated silicon surfaces by atomic layer deposition

M.-T. Ho; Y. Wang; R. T. Brewer; L. S. Wielunski; Y. J. Chabal; N. Moumen; M. Boleslawski

Appl. Phys. Lett. 87, 133103 (2005) https://doi.org/10.1063/1.2058226

Abstract

View articletitled, In situ infrared spectroscopy of hafnium oxide growth on hydrogen-terminated silicon surfaces by atomic layer deposition

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Photoluminescence properties of single Mn-doped CdS nanocrystals studied by scanning near-field optical microscopy

Atsushi Ishizumi; Kazunari Matsuda; Toshiharu Saiki; C. W. White; Yoshihiko Kanemitsu

Appl. Phys. Lett. 87, 133104 (2005) https://doi.org/10.1063/1.2058228

Abstract

View articletitled, Photoluminescence properties of single Mn-doped CdS nanocrystals studied by scanning near-field optical microscopy

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Morphological evolution of metal nanoparticles on surfaces of carbon nanotubes

Jianxin Zhong; G. Malcolm Stocks

Appl. Phys. Lett. 87, 133105 (2005) https://doi.org/10.1063/1.2067692

Abstract

View articletitled, Morphological evolution of metal nanoparticles on surfaces of carbon nanotubes

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On the lack of thermal percolation in carbon nanotube composites

N. Shenogina; S. Shenogin; L. Xue; P. Keblinski

Appl. Phys. Lett. 87, 133106 (2005) https://doi.org/10.1063/1.2056591

Abstract

View articletitled, On the lack of thermal percolation in carbon nanotube composites

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Scanning resonant tunneling spectroscopy of fullerene molecules on Si surfaces for carrier density profiling across $p - n$ junctions

Leonid Bolotov; Toshiko Okui; Toshihiko Kanayama

Appl. Phys. Lett. 87, 133107 (2005) https://doi.org/10.1063/1.2058221

Abstract

View articletitled, Scanning resonant tunneling spectroscopy of fullerene molecules on Si surfaces for carrier density profiling across <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="bold-italic">p</mi><mtext>-</mtext><mi mathvariant="bold-italic">n</mi></mrow></math> junctions

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Electrodeposition and room temperature ferromagnetic anisotropy of Co and Ni-doped ZnO nanowire arrays

J. B. Cui; U. J. Gibson

Appl. Phys. Lett. 87, 133108 (2005) https://doi.org/10.1063/1.2058222

Abstract

View articletitled, Electrodeposition and room temperature ferromagnetic anisotropy of Co and Ni-doped ZnO nanowire arrays

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Thermoelectric properties of individual electrodeposited bismuth telluride nanowires

Jianhua Zhou; Chuangui Jin; Jae Hun Seol; Xiaoguang Li; Li Shi

Appl. Phys. Lett. 87, 133109 (2005) https://doi.org/10.1063/1.2058217

Abstract

View articletitled, Thermoelectric properties of individual electrodeposited bismuth telluride nanowires

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B activation enhancement in submicron confined implants in Si

E. Bruno; S. Mirabella; G. Impellizzeri; F. Priolo; F. Giannazzo; V. Raineri; E. Napolitani

Appl. Phys. Lett. 87, 133110 (2005) https://doi.org/10.1063/1.2061867

Abstract

View articletitled, B activation enhancement in submicron confined implants in Si

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Increase of island density via formation of secondary ordered islands on pit-patterned Si (001) substrates

Z. Zhong; O. G. Schmidt; G. Bauer

Appl. Phys. Lett. 87, 133111 (2005) https://doi.org/10.1063/1.2061870

Abstract

View articletitled, Increase of island density via formation of secondary ordered islands on pit-patterned Si (001) substrates

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Patterned growth of ZnO nanorods by micromolding of sol-gel-derived seed layer

S. Joon Kwon; Jae-Hwan Park; Jae-Gwan Park

Appl. Phys. Lett. 87, 133112 (2005) https://doi.org/10.1063/1.2061871

Abstract

View articletitled, Patterned growth of ZnO nanorods by micromolding of sol-gel-derived seed layer

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Size dependency variation in lattice parameter and valency states in nanocrystalline cerium oxide

Sameer Deshpande; Swanand Patil; Satyanarayana VNT Kuchibhatla; Sudipta Seal

Appl. Phys. Lett. 87, 133113 (2005) https://doi.org/10.1063/1.2061873

Abstract

View articletitled, Size dependency variation in lattice parameter and valency states in nanocrystalline cerium oxide

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Atomically-resolved imaging by frequency-modulation atomic force microscopy using a quartz length-extension resonator

Toshu An; Toyoaki Eguchi; Kotone Akiyama; Yukio Hasegawa

Appl. Phys. Lett. 87, 133114 (2005) https://doi.org/10.1063/1.2061850

Abstract

View articletitled, Atomically-resolved imaging by frequency-modulation atomic force microscopy using a quartz length-extension resonator

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Femtosecond laser assisted growth of ZnO nanowires

Yanfeng Zhang; Richard E. Russo; Samuel S. Mao

Appl. Phys. Lett. 87, 133115 (2005) https://doi.org/10.1063/1.2061858

Abstract

View articletitled, Femtosecond laser assisted growth of ZnO nanowires

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Controlled nucleation of dislocations by a spatially localized stress field

M. Kammler; D. Chidambarrao; K. W. Schwarz; C. T. Black; F. M. Ross

Appl. Phys. Lett. 87, 133116 (2005) https://doi.org/10.1063/1.2061862

Abstract

View articletitled, Controlled nucleation of dislocations by a spatially localized stress field

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Pronounced hysteresis and high charge storage stability of single-walled carbon nanotube-based field-effect transistors

Sigen Wang; Paul Sellin

Appl. Phys. Lett. 87, 133117 (2005) https://doi.org/10.1063/1.2067690

Abstract

View articletitled, Pronounced hysteresis and high charge storage stability of single-walled carbon nanotube-based field-effect transistors

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Low noise and stable emission from carbon nanotube electron sources

Niels de Jonge; Myriam Allioux; Jim T. Oostveen; Kenneth B. K. Teo; William I. Milne

Appl. Phys. Lett. 87, 133118 (2005) https://doi.org/10.1063/1.2058225

Abstract

View articletitled, Low noise and stable emission from carbon nanotube electron sources

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Observation of the quantum-confinement effect in individual Ge nanocrystals on oxidized Si substrates using scanning tunneling spectroscopy

Yoshiaki Nakamura; Kentaro Watanabe; Yo Fukuzawa; Masakazu Ichikawa

Appl. Phys. Lett. 87, 133119 (2005) https://doi.org/10.1063/1.2067711

Abstract

View articletitled, Observation of the quantum-confinement effect in individual Ge nanocrystals on oxidized Si substrates using scanning tunneling spectroscopy

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Strong directional dependence of single-quantum-dot fine structure

R. Mark Stevenson; Robert J. Young; Patrick See; Carl E. Norman; Andrew J. Shields; Paola Atkinson; David A. Ritchie

Appl. Phys. Lett. 87, 133120 (2005) https://doi.org/10.1063/1.2067713

Abstract

View articletitled, Strong directional dependence of single-quantum-dot fine structure

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Electrochemical hydrogen storage of Ti–V-based body-centered-cubic phase alloy surface-modified with ${AB}_{5}$ nanoparticles

X. B. Yu; G. S. Walker; D. M. Grant; Z. Wu; B. J. Xia; J. Shen

Appl. Phys. Lett. 87, 133121 (2005) https://doi.org/10.1063/1.2067695

Abstract

View articletitled, Electrochemical hydrogen storage of Ti–V-based body-centered-cubic phase alloy surface-modified with <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>AB</mi><mn>5</mn></msub></mrow></math> nanoparticles

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Unconventional exchange bias in oxide-coated manganese nanoparticles

P. Z. Si; D. Li; J. W. Lee; C. J. Choi; Z. D. Zhang; D. Y. Geng; E. Brück

Appl. Phys. Lett. 87, 133122 (2005) https://doi.org/10.1063/1.2072807

Abstract

View articletitled, Unconventional exchange bias in oxide-coated manganese nanoparticles

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DEVICE PHYSICS

$Pt - Al Ga N ∕ Ga N$ Schottky diodes operated at $800 ° C$ for hydrogen sensing

Junghui Song; Wu Lu; Jeffrey S. Flynn; George R. Brandes

Appl. Phys. Lett. 87, 133501 (2005) https://doi.org/10.1063/1.2058227

Abstract

View articletitled, <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Pt</mi><mo>-</mo><mi mathvariant="normal">Al</mi><mi mathvariant="normal">Ga</mi><mi mathvariant="normal">N</mi><mo>∕</mo><mi mathvariant="normal">Ga</mi><mi mathvariant="normal">N</mi></mrow></math> Schottky diodes operated at <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>800</mn><mspace width="0.2em"></mspace><mo>°</mo><mi mathvariant="normal">C</mi></mrow></math> for hydrogen sensing

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Programmable organic thin-film devices with extremely high current densities

Troy Graves-Abe; J. C. Sturm

Appl. Phys. Lett. 87, 133502 (2005) https://doi.org/10.1063/1.2058219

Abstract

View articletitled, Programmable organic thin-film devices with extremely high current densities

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Fabrication of a vertical-type organic transistor with a planar metal base

Shin-ya Fujimoto; Ken-ichi Nakayama; Masaaki Yokoyama

Appl. Phys. Lett. 87, 133503 (2005) https://doi.org/10.1063/1.2061866

Abstract

View articletitled, Fabrication of a vertical-type organic transistor with a planar metal base

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Fast terahertz detectors with spectral tunability based on quantum Hall Corbino devices

C. Stellmach; A. Hirsch; G. Nachtwei; Yu. B. Vasilyev; N. G. Kalugin; G. Hein

Appl. Phys. Lett. 87, 133504 (2005) https://doi.org/10.1063/1.2061863

Abstract

View articletitled, Fast terahertz detectors with spectral tunability based on quantum Hall Corbino devices

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High-electron-mobility $Al Ga N ∕ Ga N$ heterostructures grown on Si(001) by molecular-beam epitaxy

S. Joblot; F. Semond; Y. Cordier; P. Lorenzini; J. Massies

Appl. Phys. Lett. 87, 133505 (2005) https://doi.org/10.1063/1.2067698

Abstract

View articletitled, High-electron-mobility <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Al</mi><mi mathvariant="normal">Ga</mi><mi mathvariant="normal">N</mi><mo>∕</mo><mi mathvariant="normal">Ga</mi><mi mathvariant="normal">N</mi></mrow></math> heterostructures grown on Si(001) by molecular-beam epitaxy

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APPLIED BIOPHYSICS

Lipid mixing upon deoxyribonucleic acid-induced liposomes fusion investigated by synchrotron small-angle x-ray scattering

Giulio Caracciolo; Daniela Pozzi; Ruggero Caminiti; Heinz Amenitsch

Appl. Phys. Lett. 87, 133901 (2005) https://doi.org/10.1063/1.2058202

Abstract

View articletitled, Lipid mixing upon deoxyribonucleic acid-induced liposomes fusion investigated by synchrotron small-angle x-ray scattering

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Self-assembled nanoporous electrodes for sensitive and labeling-free biomolecular recognition

Jun Liu; Qisheng Huo

Appl. Phys. Lett. 87, 133902 (2005) https://doi.org/10.1063/1.2072739

Abstract

View articletitled, Self-assembled nanoporous electrodes for sensitive and labeling-free biomolecular recognition

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INTERDISCIPLINARY AND GENERAL PHYSICS

Electrospraying from nanofluidic capillary slot

Steve Arscott; David Troadec

Appl. Phys. Lett. 87, 134101 (2005) https://doi.org/10.1063/1.2058223

Abstract

View articletitled, Electrospraying from nanofluidic capillary slot

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Electrochemically activated adaptive liquid lens

Carlos A. López; Chin-Chen Lee; Amir H. Hirsa

Appl. Phys. Lett. 87, 134102 (2005) https://doi.org/10.1063/1.2058209

Abstract

View articletitled, Electrochemically activated adaptive liquid lens

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Asymmetric oscillation of adherent targeted ultrasound contrast agents

Shukui Zhao; Katherine W. Ferrara; Paul A. Dayton

Appl. Phys. Lett. 87, 134103 (2005) https://doi.org/10.1063/1.2061872

Abstract

View articletitled, Asymmetric oscillation of adherent targeted ultrasound contrast agents

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Trapping and separating polar molecules by a hexapole trap

S. Pau

Appl. Phys. Lett. 87, 134104 (2005) https://doi.org/10.1063/1.2061854

Abstract

View articletitled, Trapping and separating polar molecules by a hexapole trap

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Sensitivity measurement and analysis of an ErAs:GaAs coherent photomixing transceiver

Jon E. Bjarnason; Elliott R. Brown

Appl. Phys. Lett. 87, 134105 (2005) https://doi.org/10.1063/1.2058205

Abstract

View articletitled, Sensitivity measurement and analysis of an ErAs:GaAs coherent photomixing transceiver

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Self-alignment of glass spheres using the electromeniscus phenomenon

Hiroshi Matsuura; Manabu Miyazaki; Mamoru Komatsu; Makoto Ogawa

Appl. Phys. Lett. 87, 134106 (2005) https://doi.org/10.1063/1.2048809

Abstract

View articletitled, Self-alignment of glass spheres using the electromeniscus phenomenon

Supplementary Material

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COMMENTS

Comment on “Direct evidence of nanocluster-induced luminescence in InGaN epifilms” [Appl. Phys. Lett. 86, 021911 (2005)]

S. Pereira; M. R. Correia; E. Alves; K. P. O’Donnell

Appl. Phys. Lett. 87, 136101 (2005) https://doi.org/10.1063/1.2058203

Extract

View articletitled, Comment on “Direct evidence of nanocluster-induced luminescence in InGaN epifilms” [Appl. Phys. Lett. 86, 021911 (2005)]

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Response to “Comment on ‘Direct evidence of nanocluster-induced luminescence in InGaN epifilms’ ” [Appl. Phys. Lett. 87, 136101 (2005)]

H. J. Chang; C. H. Chen; Y. F. Chen; T. Y. Lin; L. C. Chen; K. H. Chen; Z. H. Lan

Appl. Phys. Lett. 87, 136102 (2005) https://doi.org/10.1063/1.2058204

Extract

View articletitled, Response to “Comment on ‘Direct evidence of nanocluster-induced luminescence in InGaN epifilms’ ” [Appl. Phys. Lett. 87, 136101 (2005)]

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Issues

LASERS, OPTICS, AND OPTOELECTRONICS

PLASMAS AND ELECTRICAL DISCHARGES

STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

ELECTRONIC TRANSPORT AND SEMICONDUCTORS

MAGNETISM AND SUPERCONDUCTIVITY

DIELECTRICS AND FERROELECTRICITY

NANOSCALE SCIENCE AND DESIGN

DEVICE PHYSICS

APPLIED BIOPHYSICS

INTERDISCIPLINARY AND GENERAL PHYSICS

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