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Issues
24 January 2005
ISSN 0003-6951
EISSN 1077-3118
In this Issue
LASERS, OPTICS, AND OPTOELECTRONICS
Frequency beating between monolithically integrated semiconductor ring lasers
Hongjun Cao; Chiyu Liu; Hai Ling; Hui Deng; Marcita Benavidez; Vladimir A. Smagley; Robert B. Caldwell; Gregory M. Peake; Gennady A. Smolyakov; Petr G. Eliseev; Marek Osiński
Appl. Phys. Lett. 86, 041101 (2005)
https://doi.org/10.1063/1.1853532
Optical properties of stoichiometric waveguides formed by low-dose oxygen ion implantation
Xue-Lin Wang; Ke-Ming Wang; Feng Chen; Gang Fu; Shi-Ling Li; Hong Liu; Lei Gao; Ding-Yu Shen; Hong-Ji Ma; Rui Nie
Appl. Phys. Lett. 86, 041103 (2005)
https://doi.org/10.1063/1.1854202
Integrated fluorescent light source for optofluidic applications
Appl. Phys. Lett. 86, 041104 (2005)
https://doi.org/10.1063/1.1850610
Mechanism of dark-spot degradation of organic light-emitting devices
P. Melpignano; A. Baron-Toaldo; V. Biondo; S. Priante; R. Zamboni; M. Murgia; S. Caria; L. Gregoratti; A. Barinov; M. Kiskinova
Appl. Phys. Lett. 86, 041105 (2005)
https://doi.org/10.1063/1.1852706
Midinfrared luminescence imaging and its application to the optimization of light-emitting diodes
F. Weik; J. W. Tomm; R. Glatthaar; U. Vetter; D. Szewczy; J. Nurnus; A. Lambrecht; L. Mechold; B. Spellenberg; M. Bassler; M. Behringer; J. Luft
Appl. Phys. Lett. 86, 041106 (2005)
https://doi.org/10.1063/1.1855420
Self-consistent theory of the gain linewidth for quantum-cascade lasers
Appl. Phys. Lett. 86, 041108 (2005)
https://doi.org/10.1063/1.1851004
Strong exciton-photon coupling in a length tunable optical microcavity with -aggregate dye heterostructures
Appl. Phys. Lett. 86, 041110 (2005)
https://doi.org/10.1063/1.1850189
Beam divergence measurements of micro-array light-emitting diodes using confocal microscopy
Appl. Phys. Lett. 86, 041111 (2005)
https://doi.org/10.1063/1.1850599
Subpicosecond shifting of the photonic band gap in a three-dimensional photonic crystal
Dmitry A. Mazurenko; Robert Kerst; Jaap I. Dijkhuis; Andrey V. Akimov; Valery G. Golubev; Alexander A. Kaplyanskii; Dmitry A. Kurdyukov; Alexander B. Pevtsov
Appl. Phys. Lett. 86, 041114 (2005)
https://doi.org/10.1063/1.1856687
A polarization insensitive optical switch fabricated by liquid crystal–polymer composite
Appl. Phys. Lett. 86, 041115 (2005)
https://doi.org/10.1063/1.1857092
PLASMAS AND ELECTRICAL DISCHARGES
Thermal oxidation of porous silicon: Study on structure
Appl. Phys. Lett. 86, 041501 (2005)
https://doi.org/10.1063/1.1853519
Effect of the electrostatic plasma lens on the emittance of a high-current heavy ion beam
Appl. Phys. Lett. 86, 041502 (2005)
https://doi.org/10.1063/1.1855428
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
Physical properties of liquid and undercooled tungsten by levitation techniques
Appl. Phys. Lett. 86, 041901 (2005)
https://doi.org/10.1063/1.1853513
Study of band structure multiple quantum wells by high-resolution electron microscopy and electron holography
Appl. Phys. Lett. 86, 041902 (2005)
https://doi.org/10.1063/1.1856138
Giant optical anisotropy in a single InAs quantum dot in a very dilute quantum-dot ensemble
I. Favero; G. Cassabois; A. Jankovic; R. Ferreira; D. Darson; C. Voisin; C. Delalande; Ph. Roussignol; A. Badolato; P. M. Petroff; J. M. Gérard
Appl. Phys. Lett. 86, 041904 (2005)
https://doi.org/10.1063/1.1854733
In situ x-ray diffraction and calorimetric studies of devitrification process in Cu-based bulk glassy alloys
Appl. Phys. Lett. 86, 041906 (2005)
https://doi.org/10.1063/1.1850589
Influence of an in-plane electric field on exciton fine structure in InAs-GaAs self-assembled quantum dots
Appl. Phys. Lett. 86, 041907 (2005)
https://doi.org/10.1063/1.1855409
Continuous evolution of Ga adlayer coverages during plasma-assisted molecular-beam epitaxy of (0001) GaN
Appl. Phys. Lett. 86, 041908 (2005)
https://doi.org/10.1063/1.1853530
Surface-diffusion-controlled incorporation of nanosized voids during hydrogenated amorphous silicon film growth
Appl. Phys. Lett. 86, 041909 (2005)
https://doi.org/10.1063/1.1853508
Correlation between yellow luminescence intensity and carrier lifetimes in GaN epilayers
Appl. Phys. Lett. 86, 041910 (2005)
https://doi.org/10.1063/1.1857090
In situ pressure Raman spectroscopy and mechanical stability of superhard boron suboxide
Appl. Phys. Lett. 86, 041911 (2005)
https://doi.org/10.1063/1.1857091
Stability of shuffle and glide dislocation segments with increasing misfit in epitaxial layers
Appl. Phys. Lett. 86, 041912 (2005)
https://doi.org/10.1063/1.1856145
Control of silicidation in interfaces
Deok-Yong Cho; Kee-Shik Park; B.-H. Choi; S.-J. Oh; Y. J. Chang; D. H. Kim; T. W. Noh; Ranju Jung; Jae-Cheol Lee; S. D. Bu
Appl. Phys. Lett. 86, 041913 (2005)
https://doi.org/10.1063/1.1856140
Fatigue failure in thin-film polycrystalline silicon is due to subcritical cracking within the oxide layer
Appl. Phys. Lett. 86, 041914 (2005)
https://doi.org/10.1063/1.1856689
ELECTRONIC TRANSPORT AND SEMICONDUCTORS
Quasiballistic transport of hot holes in GaAs submicron channels
Appl. Phys. Lett. 86, 042101 (2005)
https://doi.org/10.1063/1.1851003
Effect of film thickness on the incorporation of Mn interstitials in
Appl. Phys. Lett. 86, 042102 (2005)
https://doi.org/10.1063/1.1855430
Zinc vacancies in the heteroepitaxy of ZnO on sapphire: Influence of the substrate orientation and layer thickness
A. Zubiaga; F. Tuomisto; F. Plazaola; K. Saarinen; J. A. Garcia; J. F. Rommeluere; J. Zuñiga-Pérez; V. Muñoz-Sanjosé
Appl. Phys. Lett. 86, 042103 (2005)
https://doi.org/10.1063/1.1855412
Unraveling the conduction mechanism of Al-doped ZnO films by valence band soft x-ray photoemission spectroscopy
Mercedes Gabás; Susana Gota; José Ramón Ramos-Barrado; Miguel Sánchez; Nicholas T. Barrett; José Avila; Maurizio Sacchi
Appl. Phys. Lett. 86, 042104 (2005)
https://doi.org/10.1063/1.1856141
Humidity effect on electrical performance of organic thin-film transistors
Appl. Phys. Lett. 86, 042105 (2005)
https://doi.org/10.1063/1.1852708
Nanometer-scale two-terminal semiconductor memory operating at room temperature
Appl. Phys. Lett. 86, 042106 (2005)
https://doi.org/10.1063/1.1852711
On the origin of the two-dimensional electron gas at the heterostructure interface
Appl. Phys. Lett. 86, 042107 (2005)
https://doi.org/10.1063/1.1850600
Halogen -type doping of chalcopyrite semiconductors
Appl. Phys. Lett. 86, 042109 (2005)
https://doi.org/10.1063/1.1854218
Characteristics of Schottky contacts to ZnO:N layers grown by molecular-beam epitaxy
Appl. Phys. Lett. 86, 042110 (2005)
https://doi.org/10.1063/1.1854191
Synthesis and transport properties of
Appl. Phys. Lett. 86, 042111 (2005)
https://doi.org/10.1063/1.1854747
Analysis of compacted and sintered metal powders by temperature-dependent resistivity measurements
Appl. Phys. Lett. 86, 042114 (2005)
https://doi.org/10.1063/1.1857094
MAGNETISM AND SUPERCONDUCTIVITY
Overdamped Josephson junctions
Appl. Phys. Lett. 86, 042501 (2005)
https://doi.org/10.1063/1.1856135
Focused-ion-beam-fabricated nanoscale magnetoresistive ballistic sensors
Appl. Phys. Lett. 86, 042502 (2005)
https://doi.org/10.1063/1.1853518
Submicrometer Hall devices fabricated by focused electron-beam-induced deposition
G. Boero; I. Utke; T. Bret; N. Quack; M. Todorova; S. Mouaziz; P. Kejik; J. Brugger; R. S. Popovic; P. Hoffmann
Appl. Phys. Lett. 86, 042503 (2005)
https://doi.org/10.1063/1.1856134
Tunable magnetic anisotropy of ultrathin Co layers
Appl. Phys. Lett. 86, 042504 (2005)
https://doi.org/10.1063/1.1850592
Optical investigation of electronic states of ions in -type GaN
Appl. Phys. Lett. 86, 042505 (2005)
https://doi.org/10.1063/1.1853525
Bulk synthesis and high-temperature ferromagnetism of with Cu co-doping
Young K. Yoo; Qizhen Xue; Hyung-Chul Lee; Shifan Cheng; X.-D. Xiang; Gerald F. Dionne; Shifa Xu; Jun He; Yong S. Chu; S. D. Preite; Samuel E. Lofland; Ichiro Takeuchi
Appl. Phys. Lett. 86, 042506 (2005)
https://doi.org/10.1063/1.1854720
Magnetization step and spin reorientation in manganites
Appl. Phys. Lett. 86, 042507 (2005)
https://doi.org/10.1063/1.1852710
DIELECTRICS AND FERROELECTRICITY
A possible mechanism of anomalous shift and asymmetric hysteresis behavior of ferroelectric thin films
Appl. Phys. Lett. 86, 042901 (2005)
https://doi.org/10.1063/1.1853520
Si Segregation into and high- gate oxides
Appl. Phys. Lett. 86, 042902 (2005)
https://doi.org/10.1063/1.1853521
Three-dimensional polarization imaging of composites
Appl. Phys. Lett. 86, 042903 (2005)
https://doi.org/10.1063/1.1854722
Hybrid titanium–aluminum oxide layer as alternative high- gate dielectric for the next generation of complementary metal–oxide–semiconductor devices
O. Auciello; W. Fan; B. Kabius; S. Saha; J. A. Carlisle; R. P. H. Chang; C. Lopez; E. A. Irene; R. A. Baragiola
Appl. Phys. Lett. 86, 042904 (2005)
https://doi.org/10.1063/1.1856137
ferroelectric heterostructures for nonvolatile memories
Appl. Phys. Lett. 86, 042905 (2005)
https://doi.org/10.1063/1.1853506
NANOSCALE SCIENCE AND DESIGN
Evidence of double layer quantum dot formation in a silicon-on-insulator nanowire transistor
Appl. Phys. Lett. 86, 043101 (2005)
https://doi.org/10.1063/1.1854738
Direct visualization of nanopatterns by single-molecule imaging
Appl. Phys. Lett. 86, 043102 (2005)
https://doi.org/10.1063/1.1850608
Near-field optical spectroscopy and microscopy of self-assembled nanostructures
Appl. Phys. Lett. 86, 043103 (2005)
https://doi.org/10.1063/1.1851005
Self-aligned Co nanoparticle chains supported by single-crystalline template
Appl. Phys. Lett. 86, 043105 (2005)
https://doi.org/10.1063/1.1855410
Controlled synthesis and manipulation of ZnO nanorings and nanobows
Appl. Phys. Lett. 86, 043106 (2005)
https://doi.org/10.1063/1.1853514
Plasma deposition of thin carbonfluorine films on aligned carbon nanotube
Appl. Phys. Lett. 86, 043107 (2005)
https://doi.org/10.1063/1.1846957
Effectiveness of TiN porous templates on the reduction of threading dislocations in GaN overgrowth by organometallic vapor-phase epitaxy
Y. Fu; Y. T. Moon; F. Yun; Ü. Özgür; J. Q. Xie; S. Doğan; H. Morkoç; C. K. Inoki; T. S. Kuan; Lin Zhou; David J. Smith
Appl. Phys. Lett. 86, 043108 (2005)
https://doi.org/10.1063/1.1849833
Giant barrier layer capacitance effects in the lithium ion conducting material
Appl. Phys. Lett. 86, 043110 (2005)
https://doi.org/10.1063/1.1852717
DEVICE PHYSICS
High-photosensitivity -channel organic phototransistors based on a biphenyl end-capped fused bithiophene oligomer
Appl. Phys. Lett. 86, 043501 (2005)
https://doi.org/10.1063/1.1856144
APPLIED BIOPHYSICS
Mechanical perturbation-induced fluorescence change of green fluorescent protein
Appl. Phys. Lett. 86, 043901 (2005)
https://doi.org/10.1063/1.1856142
INTERDISCIPLINARY AND GENERAL PHYSICS
Miniature quantum-well microwave spectrometer operating at liquid-nitrogen temperatures
Appl. Phys. Lett. 86, 044101 (2005)
https://doi.org/10.1063/1.1856143
Multiple-spot parallel processing for laser micronanofabrication
Appl. Phys. Lett. 86, 044102 (2005)
https://doi.org/10.1063/1.1855404
Electron trapping and detrapping in ion-beam-damaged diamond surfaces
Appl. Phys. Lett. 86, 044103 (2005)
https://doi.org/10.1063/1.1852083
Application of inverse problems to current density reconstruction inside components
Appl. Phys. Lett. 86, 044104 (2005)
https://doi.org/10.1063/1.1849411
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Sputter epitaxy of ScAlN films on GaN high electron mobility transistor structures
Tomoya Okuda, Shunsuke Ota, et al.
Special issue APL organic and hybrid photodetectors
Karl Leo, Canek Fuentes-Hernandez, et al.