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LASERS, OPTICS, AND OPTOELECTRONICS

Propagation properties of guided waves in index-guided two-dimensional optical waveguides

Fuminori Kusunoki; Tsutom Yotsuya; Junichi Takahara; Tetsuro Kobayashi

Appl. Phys. Lett. 86, 211101 (2005) https://doi.org/10.1063/1.1935034

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Single-mode surface-emitting quantum-cascade lasers

C. Pflügl; M. Austerer; W. Schrenk; S. Golka; G. Strasser; R. P. Green; L. R. Wilson; J. W. Cockburn; A. B. Krysa; J. S. Roberts

Appl. Phys. Lett. 86, 211102 (2005) https://doi.org/10.1063/1.1929070

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AlGaN films grown on (0001) sapphire by a two-step method

C. F. Shih; N. C. Chen; S. Y. Lin; K. S. Liu

Appl. Phys. Lett. 86, 211103 (2005) https://doi.org/10.1063/1.1931058

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High-differential-quantum-efficiency, long-wavelength vertical-cavity lasers using five-stage bipolar-cascade active regions

R. Koda; C. S. Wang; D. D. Lofgreen; L. A. Coldren

Appl. Phys. Lett. 86, 211104 (2005) https://doi.org/10.1063/1.1931060

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High-power continuous-wave midinfrared type-II “W” diode lasers

C. L. Canedy; W. W. Bewley; J. R. Lindle; I. Vurgaftman; C. S. Kim; M. Kim; J. R. Meyer

Appl. Phys. Lett. 86, 211105 (2005) https://doi.org/10.1063/1.1938256

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Dual lattice photonic-crystal beam splitters

Lijun Wu; M. Mazilu; J.-F. Gallet; T. F. Krauss

Appl. Phys. Lett. 86, 211106 (2005) https://doi.org/10.1063/1.1935770

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Variable-focus liquid lens by changing aperture

Hongwen Ren; Shin-Tson Wu

Appl. Phys. Lett. 86, 211107 (2005) https://doi.org/10.1063/1.1935749

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Integrated liquid crystal optical switch based on total internal reflection

Ailing Zhang; Kam Tai Chan; M. S. Demokan; Victor W. C. Chan; Philip C. H. Chan; Hoi S. Kwok; Andy H. P. Chan

Appl. Phys. Lett. 86, 211108 (2005) https://doi.org/10.1063/1.1935751

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Single-mode $1.27 μ m$ InGaAs vertical cavity surface-emitting lasers with temperature-tolerant modulation characteristics

Marek Chacinski; Richard Schatz; Olle Kjebon; Mattias Hammar; Rickard Marcks von Würtemberg; Sebastian Mogg; Petrus Sundgren; Jesper Berggren

Appl. Phys. Lett. 86, 211109 (2005) https://doi.org/10.1063/1.1935755

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Ultrafast metal-semiconductor-metal photodetectors on low-temperature-grown GaN

M. Mikulics; M. Marso; P. Javorka; P. Kordoš; H. Lüth; M. Kočan; A. Rizzi; S. Wu; R. Sobolewski

Appl. Phys. Lett. 86, 211110 (2005) https://doi.org/10.1063/1.1938004

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Fabry–Perot Gunn laser

S. Chung; N. Balkan

Appl. Phys. Lett. 86, 211111 (2005) https://doi.org/10.1063/1.1937995

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Observation of the biexponential ground-state decay time behavior in InAs self-assembled quantum dots grown on misoriented substrates

A. S. Shkolnik; L. Ya. Karachinsky; N. Yu. Gordeev; G. G. Zegrya; V. P. Evtikhiev; S. Pellegrini; G. S. Buller

Appl. Phys. Lett. 86, 211112 (2005) https://doi.org/10.1063/1.1938000

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Phased-array electro-optic steering of large aperture laser beams using ferroelectrics

David A. Scrymgeour; L. Tian; Venkatraman Gopalan; Daren Chauvin; Kenneth L. Schepler

Appl. Phys. Lett. 86, 211113 (2005) https://doi.org/10.1063/1.1935033

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Voltage-tunable four-color quantum-well infrared photodetectors

J. Li; K. K. Choi; D. C. Tsui

Appl. Phys. Lett. 86, 211114 (2005) https://doi.org/10.1063/1.1929086

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Static and dynamic measurements of the $α$ -factor of five-quantum-dot-layer single-mode lasers emitting at $1.3 μ m$ on GaAs

A. Martinez; A. Lemaître; K. Merghem; L. Ferlazzo; C. Dupuis; A. Ramdane; J.-G. Provost; B. Dagens; O. Le Gouezigou; O. Gauthier-Lafaye

Appl. Phys. Lett. 86, 211115 (2005) https://doi.org/10.1063/1.1935754

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Over 3 W high-efficiency vertical-external-cavity surface-emitting lasers and application as efficient fiber laser pump sources

L. Fan; M. Fallahi; J. Hader; A. R. Zakharian; M. Kolesik; J. V. Moloney; T. Qiu; A. Schülzgen; N. Peyghambarian; W. Stolz; S. W. Koch; J. T. Murray

Appl. Phys. Lett. 86, 211116 (2005) https://doi.org/10.1063/1.1935756

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Mechanisms of dynamic range limitations in GaAs∕AlGaAs quantum-cascade lasers: Influence of injector doping

V. D. Jovanović; D. Indjin; N. Vukmirović; Z. Ikonić; P. Harrison; E. H. Linfield; H. Page; X. Marcadet; C. Sirtori; C. Worrall; H. E. Beere; D. A. Ritchie

Appl. Phys. Lett. 86, 211117 (2005) https://doi.org/10.1063/1.1937993

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One-step waveguide and optical circuit writing in photopolymerizable materials processed by two-photon absorption

Stéphane Klein; Alberto Barsella; Hervé Leblond; Hervé Bulou; Alain Fort; Chantal Andraud; G. Lemercier; J. C. Mulatier; Kokou Dorkenoo

Appl. Phys. Lett. 86, 211118 (2005) https://doi.org/10.1063/1.1915525

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Prism coupled terahertz waveguide sensor

C. Rau; G. Torosyan; R. Beigang; Kh. Nerkararyan

Appl. Phys. Lett. 86, 211119 (2005) https://doi.org/10.1063/1.1940127

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High-gain multipass noncollinear optical parametric chirped pulse amplifier

Yuriy Stepanenko; Czesław Radzewicz

Appl. Phys. Lett. 86, 211120 (2005) https://doi.org/10.1063/1.1940132

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$1.55 μ m$ GaNAsSb photodetector on GaAs

H. Luo; J. A. Gupta; H. C. Liu

Appl. Phys. Lett. 86, 211121 (2005) https://doi.org/10.1063/1.1940722

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PLASMAS AND ELECTRICAL DISCHARGES

NO and ${NO}_{2}$ production in pulsed low pressure dc discharge

Antoine Rousseau; Lina V. Gatilova; Jürgen Röpcke; Alexander V. Meshchanov; Yury Z. Ionikh

Appl. Phys. Lett. 86, 211501 (2005) https://doi.org/10.1063/1.1935046

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Effects of oxygen radicals in low-pressure surface-wave plasma on sterilization

Masaaki Nagatsu; Fumie Terashita; Hiroyuki Nonaka; Lei Xu; Toshi Nagata; Yukio Koide

Appl. Phys. Lett. 86, 211502 (2005) https://doi.org/10.1063/1.1931050

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Cathodic arcs: Fractal voltage and cohesive energy rule

André Anders; Efim M. Oks; Georgy Yu. Yushkov

Appl. Phys. Lett. 86, 211503 (2005) https://doi.org/10.1063/1.1937994

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Nonideal effects on electron-atom bremsstrahlung in partially ionized hydrogen plasmas

Young-Dae Jung

Appl. Phys. Lett. 86, 211504 (2005) https://doi.org/10.1063/1.1939074

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Enhanced stress relaxation in ultrathin SiGe-on-insulator by $H^{+}$ -implantation-assisted oxidation

T. Sadoh; R. Matsuura; M. Miyao; M. Ninomiya; M. Nakamae; T. Enokida

Appl. Phys. Lett. 86, 211901 (2005) https://doi.org/10.1063/1.1935028

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Low-resistance and highly transparent Ni/indium-tin oxide ohmic contacts to phosphorous-doped $p$ -type ZnO

Soon-Hyung Kang; Dae-Kue Hwang; Seong-Ju Park

Appl. Phys. Lett. 86, 211902 (2005) https://doi.org/10.1063/1.1935030

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A different way of performing picosecond ultrasonic measurements in thin transparent films based on laser-wavelength effects

A. Devos; R. Côte; G. Caruyer; A. Lefèvre

Appl. Phys. Lett. 86, 211903 (2005) https://doi.org/10.1063/1.1929869

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Topological instability as a criterion for design and selection of aluminum-based glass-former alloys

R. D. Sá Lisboa; C. Bolfarini; W. J. Botta F.; C. S. Kiminami

Appl. Phys. Lett. 86, 211904 (2005) https://doi.org/10.1063/1.1931047

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Characterization and properties of green-emitting $β - SiAlON : {Eu}^{2 +}$ powder phosphors for white light-emitting diodes

Naoto Hirosaki; Rong-Jun Xie; Koji Kimoto; Takashi Sekiguchi; Yoshinobu Yamamoto; Takayuki Suehiro; Mamoru Mitomo

Appl. Phys. Lett. 86, 211905 (2005) https://doi.org/10.1063/1.1935027

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Transfer of the in-plane molecular orientation of polyimide film surface to liquid crystal monolayer

Kiyoaki Usami; Kenji Sakamoto; Yoichi Uehara; Sukekatsu Ushioda

Appl. Phys. Lett. 86, 211906 (2005) https://doi.org/10.1063/1.1937988

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Measurement of microwave electro-optic coefficient in ${Sr}_{0.61} {Ba}_{0.39} {Nb}_{2} O_{6}$ crystal fiber

Chuanyong Huang; Amar S. Bhalla; Ruyan Guo

Appl. Phys. Lett. 86, 211907 (2005) https://doi.org/10.1063/1.1937997

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Low temperature relaxations and effects on poling efficiencies of dendronized nonlinear optical side-chain polymers

Tomoko Gray; René M. Overney; Marnie Haller; Jingdong Luo; Alex K.-Y. Jen

Appl. Phys. Lett. 86, 211908 (2005) https://doi.org/10.1063/1.1938005

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Controlled generation of neutral, negatively-charged and positively-charged excitons in the same single quantum dot

M. Ediger; P. A. Dalgarno; J. M. Smith; B. D. Gerardot; R. J. Warburton; K. Karrai; P. M. Petroff

Appl. Phys. Lett. 86, 211909 (2005) https://doi.org/10.1063/1.1937996

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Substitutional diatomic molecules NO, NC, CO, $N_{2}$ ⁠, and $O_{2}$ ⁠: Their vibrational frequencies and effects on $p$ doping of ZnO

Sukit Limpijumnong; Xiaonan Li; Su-Huai Wei; S. B. Zhang

Appl. Phys. Lett. 86, 211910 (2005) https://doi.org/10.1063/1.1931823

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Interaction between dislocations and He-implantation-induced voids in GaN epitaxial layers

D. Alquier; C. Bongiorno; F. Roccaforte; V. Raineri

Appl. Phys. Lett. 86, 211911 (2005) https://doi.org/10.1063/1.1940121

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Transverse and longitudinal surface plasmon resonances of a hexagonal array of gold nanorods embedded in an alumina matrix

Brian G. McMillan; Léonard E. A. Berlouis; Francis R. Cruickshank; David Pugh; Pierre-François Brevet

Appl. Phys. Lett. 86, 211912 (2005) https://doi.org/10.1063/1.1939070

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A comparative study of contact resonance imaging using atomic force microscopy

S. Banerjee; N. Gayathri; S. Dash; A. K. Tyagi; Baldev Raj

Appl. Phys. Lett. 86, 211913 (2005) https://doi.org/10.1063/1.1927698

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Effects of weak ordering of InGaPN

K. I. Lin; J. Y. Lee; T. S. Wang; S. H. Hsu; J. S. Hwang; Y. G. Hong; C. W. Tu

Appl. Phys. Lett. 86, 211914 (2005) https://doi.org/10.1063/1.1940118

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Low-energy ion irradiation during film growth: Kinetic pathways leading to enhanced adatom migration rates

D. Adamovic; E. P. Münger; V. Chirita; L. Hultman; J. E. Greene

Appl. Phys. Lett. 86, 211915 (2005) https://doi.org/10.1063/1.1940122

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Epitaxial tilting of GaN grown on vicinal surfaces of sapphire

X. R. Huang; J. Bai; M. Dudley; R. D. Dupuis; U. Chowdhury

Appl. Phys. Lett. 86, 211916 (2005) https://doi.org/10.1063/1.1940123

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High-spatial-resolution strain measurements by Auger electron spectroscopy in epitaxial-lateral-overgrowth GaN

Duanjun Cai; Fuchun Xu; Junyong Kang; Pierre Gibart; Bernard Beaumont

Appl. Phys. Lett. 86, 211917 (2005) https://doi.org/10.1063/1.1929866

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Enhanced photoconductivity of ZnO films Co-doped with nitrogen and tellurium

H. L. Porter; A. L. Cai; J. F. Muth; J. Narayan

Appl. Phys. Lett. 86, 211918 (2005) https://doi.org/10.1063/1.1923194

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Galvanic effects in Si-based microelectromechanical systems: Thick oxide formation and its implications for fatigue reliability

O. N. Pierron; D. D. Macdonald; C. L. Muhlstein

Appl. Phys. Lett. 86, 211919 (2005) https://doi.org/10.1063/1.1939072

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Temperature dependence of electrical conductance in single-crystalline boron nanobelts

K. Kirihara; Z. Wang; K. Kawaguchi; Y. Shimizu; T. Sasaki; N. Koshizaki; K. Soga; K. Kimura

Appl. Phys. Lett. 86, 212101 (2005) https://doi.org/10.1063/1.1935036

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Where does photocurrent flow in polycrystalline CdS?

D. Azulay; O. Millo; S. Silbert; I. Balberg; N. Naghavi

Appl. Phys. Lett. 86, 212102 (2005) https://doi.org/10.1063/1.1923157

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Operation and high-frequency performance of nanoscale unipolar rectifying diodes

J. Mateos; B. G. Vasallo; D. Pardo; T. González

Appl. Phys. Lett. 86, 212103 (2005) https://doi.org/10.1063/1.1931051

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Odd filling factor quantum Hall sequence in magnetic type-III quantum wells

H. Buhmann; E. G. Novik; V. Daumer; J. Liu; Y. S. Gui; C. R. Becker; L. W. Molenkamp

Appl. Phys. Lett. 86, 212104 (2005) https://doi.org/10.1063/1.1935753

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Study on anomalous $n$ -type conduction of P-doped ZnO using $P_{2} O_{5}$ dopant source

Zhi Gen Yu; Hao Gong; Ping Wu

Appl. Phys. Lett. 86, 212105 (2005) https://doi.org/10.1063/1.1938249

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Arsenic activation in molecular beam epitaxy grown, in situ doped HgCdTe(211)

P. Boieriu; C. H. Grein; H. S. Jung; J. Garland; V. Nathan

Appl. Phys. Lett. 86, 212106 (2005) https://doi.org/10.1063/1.1940119

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Spin photovoltaic effect in quantum wires with Rashba interaction

Yuriy V. Pershin; Carlo Piermarocchi

Appl. Phys. Lett. 86, 212107 (2005) https://doi.org/10.1063/1.1935747

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Magnetite Schottky barriers on GaAs substrates

Steven M. Watts; Catherine Boothman; Sebastiaan van Dijken; J. M. D. Coey

Appl. Phys. Lett. 86, 212108 (2005) https://doi.org/10.1063/1.1925758

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Dipole-radiation model for terahertz radiation from semiconductors

H. J. Peng; D. E. Aspnes

Appl. Phys. Lett. 86, 212109 (2005) https://doi.org/10.1063/1.1937992

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MAGNETISM AND SUPERCONDUCTIVITY

Spin-polarized electron tunneling across magnetic dielectric

I. V. Shvets; A. N. Grigorenko; K. S. Novoselov; D. J. Mapps

Appl. Phys. Lett. 86, 212501 (2005) https://doi.org/10.1063/1.1925785

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Universal relationship between crystallinity and irreversibility field of ${MgB}_{2}$

A. Yamamoto; J. Shimoyama; S. Ueda; Y. Katsura; I. Iwayama; S. Horii; K. Kishio

Appl. Phys. Lett. 86, 212502 (2005) https://doi.org/10.1063/1.1937991

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Superconducting vortex profile from fixed point measurements the “Lazy Fisherman” tunneling microscopy method

A. Kohen; T. Cren; Th. Proslier; Y. Noat; W. Sacks; D. Roditchev; F. Giubileo; F. Bobba; A. M. Cucolo; N. Zhigadlo; S. M. Kazakov; J. Karpinski

Appl. Phys. Lett. 86, 212503 (2005) https://doi.org/10.1063/1.1939077

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Influence of nitrogen growth pressure on the ferromagnetic properties of Cr-doped AlN thin films

Jun Zhang; X. Z. Li; B. Xu; D. J. Sellmyer

Appl. Phys. Lett. 86, 212504 (2005) https://doi.org/10.1063/1.1940131

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Strong near-infrared photoluminescence in erbium/ytterbium codoped porous silicon

L. Luo; X. X. Zhang; K. F. Li; K. W. Cheah; M. L. Gong; J. X. Shi; W. K. Wong

Appl. Phys. Lett. 86, 212505 (2005) https://doi.org/10.1063/1.1925776

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DIELECTRICS AND FERROELECTRICITY

Light-induced order-of-magnitude decrease in the electric field for domain nucleation in MgO-doped lithium niobate crystals

C. L. Sones; M. C. Wengler; C. E. Valdivia; S. Mailis; R. W. Eason; K. Buse

Appl. Phys. Lett. 86, 212901 (2005) https://doi.org/10.1063/1.1929099

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Current-conduction and charge trapping properties due to bulk nitrogen in ${HfO}_{x} N_{y}$ gate dielectric of metal-oxide-semiconductor devices

Chin-Lung Cheng; Kuei-Shu Chang-Liao; Ching-Hung Huang; Tien-Ko Wang

Appl. Phys. Lett. 86, 212902 (2005) https://doi.org/10.1063/1.1935768

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Low-temperature growth of high-quality lead zirconate titanate thin films by 28 GHz microwave irradiation

Z. J. Wang; H. Kokawa; H. Takizawa; M. Ichiki; R. Maeda

Appl. Phys. Lett. 86, 212903 (2005) https://doi.org/10.1063/1.1935748

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Enhanced in-plane ferroelectricity in ${Ba}_{0.7} {Sr}_{0.3} Ti O_{3}$ thin films grown on MgO (001) single-crystal substrate

D. Y. Wang; Y. Wang; X. Y. Zhou; H. L. W. Chan; C. L. Choy

Appl. Phys. Lett. 86, 212904 (2005) https://doi.org/10.1063/1.1938247

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Domain structure control of $(001) ∕ (100)$ -oriented epitaxial $Pb (Zr, Ti) O_{3}$ films grown on ${(100)}_{c} Sr Ru O_{3} ∕ (100) Sr Ti O_{3}$ substrates

Yong Kwan Kim; Hitoshi Morioka; Risako Ueno; Shintaro Yokoyama; Hiroshi Funakubo

Appl. Phys. Lett. 86, 212905 (2005) https://doi.org/10.1063/1.1938250

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Environment of hafnium and silicon in Hf-based dielectric films: An atomistic study by x-ray absorption spectroscopy and x-ray diffraction

J. Morais; L. Miotti; K. P. Bastos; S. R. Teixeira; I. J. R. Baumvol; A. L. P. Rotondaro; J. J. Chambers; M. R. Visokay; L. Colombo; M. C. Martins Alves

Appl. Phys. Lett. 86, 212906 (2005) https://doi.org/10.1063/1.1935042

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Nanometer-scale crystallization of thin $Hf O_{2}$ films studied by HF-chemical etching

Shinji Fujii; Noriyuki Miyata; Shinji Migita; Tsuyoshi Horikawa; Akira Toriumi

Appl. Phys. Lett. 86, 212907 (2005) https://doi.org/10.1063/1.1939073

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NANOSCALE SCIENCE AND DESIGN

One-dimensional transport of ${In}_{2} O_{3}$ nanowires

Fei Liu; Mingqiang Bao; Kang L. Wang; Chao Li; Bo Lei; Chongwu Zhou

Appl. Phys. Lett. 86, 213101 (2005) https://doi.org/10.1063/1.1928323

Abstract

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Catalyst-free growth of GaAs nanowires by selective-area metalorganic vapor-phase epitaxy

Jinichiro Noborisaka; Junichi Motohisa; Takashi Fukui

Appl. Phys. Lett. 86, 213102 (2005) https://doi.org/10.1063/1.1935038

Abstract

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Quantum-confined Stark effect in a single InGaN quantum dot under a lateral electric field

James W. Robinson; James H. Rice; Kwan H. Lee; Jong H. Na; Robert A. Taylor; David G. Hasko; Rachel A. Oliver; Menno J. Kappers; Colin J. Humphreys; G. Andrew D. Briggs

Appl. Phys. Lett. 86, 213103 (2005) https://doi.org/10.1063/1.1935044

Abstract

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Fabrication and characterization of $1.1 GHz$ blade nanoelectromechanical resonator

V. Agache; B. Legrand; D. Collard; L. Buchaillot; H. Fujita

Appl. Phys. Lett. 86, 213104 (2005) https://doi.org/10.1063/1.1929873

Abstract

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Room-temperature semiconductor gas sensor based on nonstoichiometric tungsten oxide nanorod film

Yong Shin Kim; Seung-Chul Ha; Kyuwon Kim; Haesik Yang; Sung-Yool Choi; Youn Tae Kim; Joon T. Park; Chang Hoon Lee; Jiyoung Choi; Jungsun Paek; Kwangyeol Lee

Appl. Phys. Lett. 86, 213105 (2005) https://doi.org/10.1063/1.1929872

Abstract

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Structure and luminescence of pyramid-shaped CdSe nanostructures grown by metalorganic chemical vapor deposition

C. X. Shan; Z. Liu; C. M. Ng; S. K. Hark

Appl. Phys. Lett. 86, 213106 (2005) https://doi.org/10.1063/1.1937998

Abstract

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Initial stages of silicon anodization in the transition regime: Nanoparticle formation

T. Nychyporuk; V. Lysenko; B. Gautier; D. Barbier

Appl. Phys. Lett. 86, 213107 (2005) https://doi.org/10.1063/1.1931061

Abstract

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Synthesis and field-electron-emission behavior of aligned GaAs nanowires

C. Y. Zhi; X. D. Bai; E. G. Wang

Appl. Phys. Lett. 86, 213108 (2005) https://doi.org/10.1063/1.1938248

Abstract

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Magnetized/charged $Mg H_{2}$ -based hydrogen storage materials

Muneyuki Tsuda; Wilson Agerico Diño; Hideaki Kasai; Hiroshi Nakanishi

Appl. Phys. Lett. 86, 213109 (2005) https://doi.org/10.1063/1.1931045

Abstract

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Phonon characteristics and cathodolumininescence of boron nitride nanotubes

Chunyi Zhi; Yoshio Bando; Chengchun Tang; Dmitri Golberg; Rongguo Xie; Takashi Sekigushi

Appl. Phys. Lett. 86, 213110 (2005) https://doi.org/10.1063/1.1938002

Abstract

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Substrate-dependent electronic properties of an armchair carbon nanotube adsorbed on $H ∕ Si (001)$

R. H. Miwa; W. Orellana; A. Fazzio

Appl. Phys. Lett. 86, 213111 (2005) https://doi.org/10.1063/1.1931027

Abstract

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Phonon confinement effect of silicon nanowires synthesized by laser ablation

N. Fukata; T. Oshima; K. Murakami; T. Kizuka; T. Tsurui; S. Ito

Appl. Phys. Lett. 86, 213112 (2005) https://doi.org/10.1063/1.1931055

Abstract

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Cobalt–polypyrrole–cobalt nanowire field-effect transistors

Hyun-Jong Chung; Hun Huy Jung; Yong-Sung Cho; Sungjun Lee; Jeong-Hoon Ha; Je Hyuk Choi; Young Kuk

Appl. Phys. Lett. 86, 213113 (2005) https://doi.org/10.1063/1.1940125

Abstract

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Charging and emission effects of multiwalled carbon nanotubes probed by electric force microscopy

M. Zdrojek; T. Mélin; C. Boyaval; D. Stiévenard; B. Jouault; M. Wozniak; A. Huczko; W. Gebicki; L. Adamowicz

Appl. Phys. Lett. 86, 213114 (2005) https://doi.org/10.1063/1.1925782

Abstract

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Stable single-atom contacts of zinc whiskers

P. Konrad; C. Bacca; E. Scheer; P. Brenner; A. Mayer-Gindner; H. v. Löhneysen

Appl. Phys. Lett. 86, 213115 (2005) https://doi.org/10.1063/1.1926408

Abstract

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Evidence of ion diffusion at room temperature in microcrystals of the ${Bi}_{2} {Sr}_{2} {CaCu}_{2} O_{8 + δ}$ superconductor

M. Truccato; C. Lamberti; C. Prestipino; A. Agostino

Appl. Phys. Lett. 86, 213116 (2005) https://doi.org/10.1063/1.1938251

Abstract

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DEVICE PHYSICS

Improvement of efficiency of dye-sensitized solar cells by reduction of internal resistance

Liyuan Han; Naoki Koide; Yasuo Chiba; Ashraful Islam; Ryoichi Komiya; Nobuhiro Fuke; Atsushi Fukui; Ryohsuke Yamanaka

Appl. Phys. Lett. 86, 213501 (2005) https://doi.org/10.1063/1.1925773

Abstract

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Origin of the improved luminance-voltage characteristics and stability in organic light-emitting device using CsCl electron injection layer

Yeonjin Yi; Seong Jun Kang; Kwanghee Cho; Jong Mo Koo; Kyul Han; Kyongjin Park; Myungkeun Noh; Chung Nam Whang; Kwangho Jeong

Appl. Phys. Lett. 86, 213502 (2005) https://doi.org/10.1063/1.1935773

Abstract

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Terahertz frequency range band-stop filters

J. Cunningham; C. Wood; A. G. Davies; I. Hunter; E. H. Linfield; H. E. Beere

Appl. Phys. Lett. 86, 213503 (2005) https://doi.org/10.1063/1.1938255

Abstract

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Electro-optical response of a single-crystal diamond ultraviolet photoconductor in transverse configuration

A. De Sio; J. Achard; A. Tallaire; R. S. Sussmann; A. T. Collins; F. Silva; E. Pace

Appl. Phys. Lett. 86, 213504 (2005) https://doi.org/10.1063/1.1935039

Abstract

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Improvement of the light output of InGaN-based light-emitting diodes using Cu-doped indium oxide/indium tin oxide $p$ -type electrodes

June-O Song; J. S. Kwak; Y. Park; Tae-Yeon Seong

Appl. Phys. Lett. 86, 213505 (2005) https://doi.org/10.1063/1.1937987

Abstract

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Singlet-singlet and singlet-heat annihilations in fluorescence-based organic light-emitting diodes under steady-state high current density

Hajime Nakanotani; Hiroyuki Sasabe; Chihaya Adachi

Appl. Phys. Lett. 86, 213506 (2005) https://doi.org/10.1063/1.1939075

Abstract

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Synthesis and characterization of a single-crystal chemical-vapor-deposition diamond particle detector

A. Balducci; Marco Marinelli; E. Milani; M. E. Morgada; G. Pucella; A. Tucciarone; G. Verona-Rinati; M. Angelone; M. Pillon

Appl. Phys. Lett. 86, 213507 (2005) https://doi.org/10.1063/1.1935037

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Electronic structure of Cs-doped tris(8-hydroxyquinoline) aluminum

Huanjun Ding; Yongli Gao

Appl. Phys. Lett. 86, 213508 (2005) https://doi.org/10.1063/1.1935750

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INTERDISCIPLINARY AND GENERAL PHYSICS

Enhanced liquid atomization: From flow-focusing to flow-blurring

Alfonso M. Gañán-Calvo

Appl. Phys. Lett. 86, 214101 (2005) https://doi.org/10.1063/1.1931057

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COMMENTS

Comment on “Unraveling the conduction mechanism of Al-doped ZnO films by valence band soft x-ray photoemission spectroscopy” [Appl. Phys. Lett. 86, 042104 (2005)]

Yow-Jon Lin

Appl. Phys. Lett. 86, 216101 (2005) https://doi.org/10.1063/1.1935759

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Response to “Comment on ‘Unraveling the conduction mechanism of Al-doped ZnO films by valence band soft X-ray photoemission’ ” [Appl. Phys. Lett. 86, 216101 (2005)]

Mercedes Gabás; Susana Gota; José Ramón Ramos-Barrado; Miguel Sánchez; Nicholas T. Barrett; José Avila; Maurizio Sacchi

Appl. Phys. Lett. 86, 216102 (2005) https://doi.org/10.1063/1.1935760

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Comment on “Proposed model for calculating the standard formation enthalpy of binary transition-metal systems” [
Appl. Phys. Lett.

81
,
1219
(
2002
)]

Xing-Qiu Chen; R. Podloucky; P. Rogl; W. Wolf

Appl. Phys. Lett. 86, 216103 (2005) https://doi.org/10.1063/1.1939079

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Response to “Comment on ‘Proposed model for calculating the standard formation enthalpy of binary transition-metal systems’ ” [
Appl. Phys. Lett.

86
,
216103
(
2005
)]

R. F. Zhang; B. X. Liu

Appl. Phys. Lett. 86, 216104 (2005) https://doi.org/10.1063/1.1939080

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Issues

LASERS, OPTICS, AND OPTOELECTRONICS

PLASMAS AND ELECTRICAL DISCHARGES

STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

ELECTRONIC TRANSPORT AND SEMICONDUCTORS

MAGNETISM AND SUPERCONDUCTIVITY

DIELECTRICS AND FERROELECTRICITY

NANOSCALE SCIENCE AND DESIGN

DEVICE PHYSICS

INTERDISCIPLINARY AND GENERAL PHYSICS

COMMENTS

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