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LASERS, OPTICS, AND OPTOELECTRONICS

Broadband InGaAs tapered diode laser sources for optical coherence radar and coherence tomography

Oliver Casel; Harry Fuchs; Marc A. Tremont; Dirk Woll; Richard Wallenstein

Appl. Phys. Lett. 86, 191101 (2005) https://doi.org/10.1063/1.1925313

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Space-variant polarization manipulation of a thermal emission by a $Si O_{2}$ subwavelength grating supporting surface phonon-polaritons

Nir Dahan; Avi Niv; Gabriel Biener; Vladimir Kleiner; Erez Hasman

Appl. Phys. Lett. 86, 191102 (2005) https://doi.org/10.1063/1.1922084

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High-detectivity InAs quantum-dot infrared photodetectors grown on InP by metal–organic chemical–vapor deposition

W. Zhang; H. Lim; M. Taguchi; S. Tsao; B. Movaghar; M. Razeghi

Appl. Phys. Lett. 86, 191103 (2005) https://doi.org/10.1063/1.1923176

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Experimental characterization of the reflectance of 60° waveguide bends in photonic crystal waveguides

M. H. Shih; Woo Jun Kim; Wan Kuang; J. R. Cao; Sang-Jun Choi; John D. O’Brien; P. Daniel Dapkus

Appl. Phys. Lett. 86, 191104 (2005) https://doi.org/10.1063/1.1923169

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Three-dimensional optical memory using photoluminescence change in Sm-doped sodium borate glass

Jinhyong Lim; Myeongkyu Lee; Eunkyoung Kim

Appl. Phys. Lett. 86, 191105 (2005) https://doi.org/10.1063/1.1926402

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Characteristics of a tunneling quantum-dot infrared photodetector operating at room temperature

P. Bhattacharya; X. H. Su; S. Chakrabarti; G. Ariyawansa; A. G. U. Perera

Appl. Phys. Lett. 86, 191106 (2005) https://doi.org/10.1063/1.1923766

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Optical add-drop multiplexers based on Si-wire waveguides

Hirohito Yamada; Tao Chu; Satomi Ishida; Yasuhiko Arakawa

Appl. Phys. Lett. 86, 191107 (2005) https://doi.org/10.1063/1.1924884

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Calculation of the linewidth broadening in vertical-cavity surface-emitting lasers due to temperature fluctuations

Christian Lauer; Markus-Christian Amann

Appl. Phys. Lett. 86, 191108 (2005) https://doi.org/10.1063/1.1924868

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Observation of ultrahigh quality factor in a semiconductor microcavity

D. Sanvitto; A. Daraei; A. Tahraoui; M. Hopkinson; P. W. Fry; D. M. Whittaker; M. S. Skolnick

Appl. Phys. Lett. 86, 191109 (2005) https://doi.org/10.1063/1.1925774

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Observation of soliton ridge states for the self-imprinting of fiber-slab couplers

Eugenio DelRe; Angelo D’Ercole; Elia Palange; Aharon J. Agranat

Appl. Phys. Lett. 86, 191110 (2005) https://doi.org/10.1063/1.1926401

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Potential white-light long-lasting phosphor: ${Dy}^{3 +}$ -doped aluminate

Bo Liu; Chaoshu Shi; Zeming Qi

Appl. Phys. Lett. 86, 191111 (2005) https://doi.org/10.1063/1.1925778

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PLASMAS AND ELECTRICAL DISCHARGES

Ti $K α$ radiography of Cu-doped plastic microshell implosions via spherically bent crystal imaging

Appl. Phys. Lett. 86, 191501 (2005) https://doi.org/10.1063/1.1923178

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Suppression of ionization instability in a magnetohydrodynamic plasma by coupling with a radio-frequency electromagnetic field

Tomoyuki Murakami; Yoshihiro Okuno; Hiroyuki Yamasaki

Appl. Phys. Lett. 86, 191502 (2005) https://doi.org/10.1063/1.1926410

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Possible method for diagnosing waves in dusty plasmas with magnetized charged dust particulates

M. Rosenberg; P. K. Shukla

Appl. Phys. Lett. 86, 191503 (2005) https://doi.org/10.1063/1.1923749

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2.45 GHz microwave-excited atmospheric pressure air microplasmas based on microstrip technology

Jaeho Kim; Kazuo Terashima

Appl. Phys. Lett. 86, 191504 (2005) https://doi.org/10.1063/1.1926411

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Rapid heating of solid density material by a petawatt laser

R. G. Evans; E. L. Clark; R. T. Eagleton; A. M. Dunne; R. D. Edwards; W. J. Garbett; T. J. Goldsack; S. James; C. C. Smith; B. R. Thomas; R. Clarke; D. J. Neely; S. J. Rose

Appl. Phys. Lett. 86, 191505 (2005) https://doi.org/10.1063/1.1920422

Abstract

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Geometrical criteria required for the determination of the epitaxial stress from the transmission electron microscopy curvature method

M. Cabié; A. Ponchet; A. Rocher; L. Durand; A. Altibelli

Appl. Phys. Lett. 86, 191901 (2005) https://doi.org/10.1063/1.1900306

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Blue-purplish InGaN quantum wells with shallow depth of exciton localization

Tetsuya Akasaka; Hideki Gotoh; Hedetoshi Nakano; Toshiki Makimoto

Appl. Phys. Lett. 86, 191902 (2005) https://doi.org/10.1063/1.1925314

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Accurate determination of atomic structure of multiwalled carbon nanotubes by nondestructive nanobeam electron diffraction

Zejian Liu; Qi Zhang; Lu-Chang Qin

Appl. Phys. Lett. 86, 191903 (2005) https://doi.org/10.1063/1.1923170

Abstract

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In situ investigation of growth and thermal stability of ultrathin Si layers on the $Hf O_{2} ∕ Si$ (100) high- $κ$ dielectric system

Yu. Yu. Lebedinskii; A. Zenkevich; E. P. Gusev; M. Gribelyuk

Appl. Phys. Lett. 86, 191904 (2005) https://doi.org/10.1063/1.1923158

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Thermodynamic stability of ${Ga}_{2} O_{3} ({Gd}_{2} O_{3}) ∕ Ga As$ interface

Y. L. Huang; P. Chang; Z. K. Yang; Y. J. Lee; H. Y. Lee; H. J. Liu; J. Kwo; J. P. Mannaerts; M. Hong

Appl. Phys. Lett. 86, 191905 (2005) https://doi.org/10.1063/1.1923172

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Strategy for pinpointing the best glass-forming alloys

D. Ma; H. Tan; D. Wang; Y. Li; E. Ma

Appl. Phys. Lett. 86, 191906 (2005) https://doi.org/10.1063/1.1922570

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Optical properties of poly(di- $n$ -hexylsilane)–zirconia hybrid thin films: suppression of thermochromism and large thermo-optic coefficients

Masahiro Marusaki; Hiroyoshi Naito; Yukihito Matsuura; Kimihiro Matsukawa

Appl. Phys. Lett. 86, 191907 (2005) https://doi.org/10.1063/1.1923196

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Reduction of dislocations in GaN epilayers using templated three-dimensional coherent nanoislands

K. Jeganathan; M. Shimizu; H. Okumura

Appl. Phys. Lett. 86, 191908 (2005) https://doi.org/10.1063/1.1926419

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Dynamic polarization filtering in anisotropically strained $M$ -plane GaN films

K. Omae; T. Flissikowski; P. Misra; O. Brandt; H. T. Grahn; K. Kojima; Y. Kawakami

Appl. Phys. Lett. 86, 191909 (2005) https://doi.org/10.1063/1.1927271

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Achieving area-selective atomic layer deposition on patterned substrates by selective surface modification

Rong Chen; Hyoungsub Kim; Paul C. McIntyre; David W. Porter; Stacey F. Bent

Appl. Phys. Lett. 86, 191910 (2005) https://doi.org/10.1063/1.1922076

Abstract

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Nature of room-temperature photoluminescence in ZnO

W. Shan; W. Walukiewicz; J. W. Ager, III; K. M. Yu; H. B. Yuan; H. P. Xin; G. Cantwell; J. J. Song

Appl. Phys. Lett. 86, 191911 (2005) https://doi.org/10.1063/1.1923757

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Versatile buffer layer architectures based on ${Ge}_{1 - x} {Sn}_{x}$ alloys

R. Roucka; J. Tolle; C. Cook; A. V. G. Chizmeshya; J. Kouvetakis; V. D’Costa; J. Menendez; Zhihao D. Chen; S. Zollner

Appl. Phys. Lett. 86, 191912 (2005) https://doi.org/10.1063/1.1922078

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Epitaxial growth of ${Na}_{x} Co O_{2}$ thin films by pulsed-laser deposition

Y. Krockenberger; I. Fritsch; G. Cristiani; A. Matveev; L. Alff; H.-U. Habermeier; B. Keimer

Appl. Phys. Lett. 86, 191913 (2005) https://doi.org/10.1063/1.1927272

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Formation of epitaxial $β$ -Sn islands at the interface of ${SiO}_{2} ∕ Si$ layers implanted with Sn ions

J. M. J. Lopes; F. C. Zawislak; P. F. P. Fichtner; R. M. Papaléo; F. C. Lovey; A. M. Condó; A. J. Tolley

Appl. Phys. Lett. 86, 191914 (2005) https://doi.org/10.1063/1.1927710

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Texture formation in FePt thin films via thermal stress management

P. Rasmussen; X. Rui; J. E. Shield

Appl. Phys. Lett. 86, 191915 (2005) https://doi.org/10.1063/1.1924889

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Simulations of composite carbon films with nanotube inclusions

M. G. Fyta; P. C. Kelires

Appl. Phys. Lett. 86, 191916 (2005) https://doi.org/10.1063/1.1924881

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Why is iridium the best substrate for single crystal diamond growth?

Matthieu J. Verstraete; Jean-Christophe Charlier

Appl. Phys. Lett. 86, 191917 (2005) https://doi.org/10.1063/1.1922571

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Green emission from Er-doped GaN powder

Huaqiang Wu; Carl B. Poitras; Michal Lipson; Michael G. Spencer; Janet Hunting; Francis J. DiSalvo

Appl. Phys. Lett. 86, 191918 (2005) https://doi.org/10.1063/1.1923175

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Photoluminescence enhancement of Si nanocrystals embedded in ${SiO}_{2}$ matrix by ${CeF}_{3}$ doping

Y. C. Fang; Z. J. Zhang; Z. Q. Xie; Y. Y. Zhao; M. Lu

Appl. Phys. Lett. 86, 191919 (2005) https://doi.org/10.1063/1.1924892

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Band structure and alignment of the $Al N ∕ Si C$ heterostructure

Jongwoo Choi; Ragesh Puthenkovilakam; Jane P. Chang

Appl. Phys. Lett. 86, 192101 (2005) https://doi.org/10.1063/1.1923187

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Activation characteristics of ion-implanted ${Si}^{+}$ in AlGaN

Y. Irokawa; O. Fujishima; T. Kachi; S. J. Pearton; F. Ren

Appl. Phys. Lett. 86, 192102 (2005) https://doi.org/10.1063/1.1926422

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Low-resistance ohmic contacts to $p - Zn Mg O$ grown by pulsed-laser deposition

Hyuck Soo Yang; Y. Li; D. P. Norton; K. Ip; S. J. Pearton; Soohwan Jang; F. Ren

Appl. Phys. Lett. 86, 192103 (2005) https://doi.org/10.1063/1.1925309

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Improved hole mobilities and thermal stability in a $strained ‐ Si ∕ strained ‐ {Si}_{1 - y} {Ge}_{y} ∕ strained ‐ Si$ heterostructure grown on a relaxed ${Si}_{1 - x} {Ge}_{x}$ buffer

Saurabh Gupta; Minjoo L. Lee; Eugene A. Fitzgerald

Appl. Phys. Lett. 86, 192104 (2005) https://doi.org/10.1063/1.1923195

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Room temperature near-ultraviolet emission from In-rich $In Ga N ∕ Ga N$ multiple quantum wells

Soon-Yong Kwon; Sung-Il Baik; Young-Woon Kim; Hee Jin Kim; Dong-Su Ko; Euijoon Yoon; Jung-Won Yoon; Hyeonsik Cheong; Yoon-Soo Park

Appl. Phys. Lett. 86, 192105 (2005) https://doi.org/10.1063/1.1923177

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Modulating the growth conditions: Si as an acceptor in (110) GaAs for high mobility $p$ -type heterostructures

F. Fischer; D. Schuh; M. Bichler; G. Abstreiter; M. Grayson; K. Neumaier

Appl. Phys. Lett. 86, 192106 (2005) https://doi.org/10.1063/1.1923761

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Spin-polarized transport of two-dimensional electron gas embedded in a diluted magnetic semiconductor

W. Yang; Kai Chang; F. M. Peeters

Appl. Phys. Lett. 86, 192107 (2005) https://doi.org/10.1063/1.1927693

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Highly Si-doped AlN grown by plasma-assisted molecular-beam epitaxy

M. Hermann; F. Furtmayr; A. Bergmaier; G. Dollinger; M. Stutzmann; M. Eickhoff

Appl. Phys. Lett. 86, 192108 (2005) https://doi.org/10.1063/1.1923180

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Large negative persistent photoconductivity in $InAs ∕ AlSb$ quantum wells

Yu. G. Sadofyev; A. Ramamoorthy; J. P. Bird; S. R. Johnson; Y.-H. Zhang

Appl. Phys. Lett. 86, 192109 (2005) https://doi.org/10.1063/1.1926407

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Atomic layer deposition of high- $κ$ dielectrics on nitrided silicon surfaces

Ye Xu; Charles B. Musgrave

Appl. Phys. Lett. 86, 192110 (2005) https://doi.org/10.1063/1.1922080

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Fermi-level band filling and band-gap renormalization in Ga-doped ZnO

J. D. Ye; S. L. Gu; S. M. Zhu; S. M. Liu; Y. D. Zheng; R. Zhang; Y. Shi

Appl. Phys. Lett. 86, 192111 (2005) https://doi.org/10.1063/1.1928322

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Purification and crystallization of tungsten wires fabricated by focused-ion-beam-induced deposition

M. Prestigiacomo; F. Bedu; F. Jandard; D. Tonneau; H. Dallaporta; L. Roussel; P. Sudraud

Appl. Phys. Lett. 86, 192112 (2005) https://doi.org/10.1063/1.1927714

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Electron tunneling spectroscopy study of traps in high- $k$ gate dielectrics: Determination of physical locations and energy levels of traps

Miaomiao Wang; Wei He; T. P. Ma

Appl. Phys. Lett. 86, 192113 (2005) https://doi.org/10.1063/1.1924893

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MAGNETISM AND SUPERCONDUCTIVITY

Interlayer coupling in a trilayer junction having bismuth as spacer layer

Jen-Hwa Hsu; D. R. Sahu

Appl. Phys. Lett. 86, 192501 (2005) https://doi.org/10.1063/1.1925323

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Low-resistance magnetic tunnel junctions prepared by partial remote plasma oxidation of $0.9 nm$ Al barriers

Ricardo Ferreira; Paulo P. Freitas; Maureen MacKenzie; John N. Chapman

Appl. Phys. Lett. 86, 192502 (2005) https://doi.org/10.1063/1.1925318

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Magnetic domain configurations in spark-eroded ferromagnetic shape memory Ni-Mn-Ga particles

Virgil C. Solomon; Martha R. McCartney; David J. Smith; YunJun Tang; Ami E. Berkowitz; Robert C. O’Handley

Appl. Phys. Lett. 86, 192503 (2005) https://doi.org/10.1063/1.1925319

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Impact of niobium doping upon the magnetotransport properties of the oxygen-deficient perovskite $Sr {Co}_{1 - x} {Nb}_{x} O_{3 - δ}$

T. Motohashi; V. Caignaert; V. Pralong; M. Hervieu; A. Maignan; B. Raveau

Appl. Phys. Lett. 86, 192504 (2005) https://doi.org/10.1063/1.1925312

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Ru-doped ${La}_{0.6} {Sr}_{0.4} Mn O_{3}$ thin films as a coercivity tunable electrode for magnetic tunnel junctions

Hiroyuki Yamada; M. Kawasaki; Y. Tokura

Appl. Phys. Lett. 86, 192505 (2005) https://doi.org/10.1063/1.1923199

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Influence of the lateral movement on the levitation and guidance force in the high-temperature superconductor maglev system

Honghai Song; Oliver de Haas; Christoph Beyer; Gernot Krabbes; Peter Verges; Ludwig Schultz

Appl. Phys. Lett. 86, 192506 (2005) https://doi.org/10.1063/1.1923190

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Microcrack-free epitaxy of thick ${YBa}_{2} {Cu}_{3} O_{7 - δ}$ films on vicinal r-cut sapphire buffered with ${CeO}_{2}$

J. C. Nie; H. Yamasaki; Y. Nakagawa; K. Develos-Bagarinao; M. Murugesan; H. Obara; Y. Mawatari

Appl. Phys. Lett. 86, 192507 (2005) https://doi.org/10.1063/1.1926415

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The effect of growth rates on the microstructures of $Eu {Ba}_{2} {Cu}_{3} O_{7 - x}$ films on $Sr Ti O_{3}$ substrates

Y. Lin; H. Wang; M. E. Hawley; S. R. Foltyn; Q. X. Jia

Appl. Phys. Lett. 86, 192508 (2005) https://doi.org/10.1063/1.1906312

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Selective epitaxial growth of submicron complex oxide structures by amorphous $Sr Ti O_{3}$

P. Morales; M. DiCiano; J. Y. T. Wei

Appl. Phys. Lett. 86, 192509 (2005) https://doi.org/10.1063/1.1925781

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Néel temperature enhancement in nanostructured nickel zinc ferrite

N. Ponpandian; A. Narayanasamy; C. N. Chinnasamy; N. Sivakumar; J.-M. Greneche; K. Chattopadhyay; K. Shinoda; B. Jeyadevan; K. Tohji

Appl. Phys. Lett. 86, 192510 (2005) https://doi.org/10.1063/1.1925755

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Effects of temperature on good rectifying characteristic of manganite-based $p ‐ n$ junction

Tian-Yi Cai; Zhen-Ya Li

Appl. Phys. Lett. 86, 192511 (2005) https://doi.org/10.1063/1.1923171

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An interface-proximity model for switchable interfacial uncompensated antiferromagnetic spins and their role in exchange bias

Ki-Suk Lee; Young-Sang Yu; Sang-Koog Kim

Appl. Phys. Lett. 86, 192512 (2005) https://doi.org/10.1063/1.1920412

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Structural stability and magnetic properties of ${SmCo}_{7 - x} {Ga}_{x}$

Yongquan Guo; Wei Li; Weichun Feng; Jun Luo; Jingkui Liang; Qijun He; Xiaojun Yu

Appl. Phys. Lett. 86, 192513 (2005) https://doi.org/10.1063/1.1926416

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Diversity of the magnetic coupling behaviors in the $Co {Fe}_{2} ∕ Co {Fe}_{2} O_{4}$ system

N. Viart; R. Sayed Hassan; C. Mény; P. Panissod; C. Ulhaq-Bouillet; J. L. Loison; G. Versini; F. Huber; G. Pourroy

Appl. Phys. Lett. 86, 192514 (2005) https://doi.org/10.1063/1.1923763

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Spin transfer in antisymmetric exchange-biased spin-valves

Y. Jiang; G. H. Yu; Y. B. Wang; J. Teng; T. Ochiai; N. Tezuka; K. Inomata

Appl. Phys. Lett. 86, 192515 (2005) https://doi.org/10.1063/1.1927694

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DIELECTRICS AND FERROELECTRICITY

Equivalent oxide thickness of a thin oxide interlayer in gate insulator stacks on silicon

Feliciano Giustino; Angelo Bongiorno; Alfredo Pasquarello

Appl. Phys. Lett. 86, 192901 (2005) https://doi.org/10.1063/1.1923185

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Polarization reversal and capacitance-voltage characteristic of epitaxial $Pb (Zr, Ti) O_{3}$ layers

L. Pintilie; M. Lisca; M. Alexe

Appl. Phys. Lett. 86, 192902 (2005) https://doi.org/10.1063/1.1926403

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Domain rearrangement during nanoindentation in single-crystalline barium titanate measured by atomic force microscopy and piezoresponse force microscopy

G. A. Schneider; T. Scholz; J. Muñoz-Saldaña; M. V. Swain

Appl. Phys. Lett. 86, 192903 (2005) https://doi.org/10.1063/1.1920410

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Chemical and dielectrical characteristics of ultrathin oxides grown by atomic force microscopy and scanning electron beam

X. N. Xie; H. J. Chung; C. H. Sow; A. T. S. Wee

Appl. Phys. Lett. 86, 192904 (2005) https://doi.org/10.1063/1.1901814

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Effects of nonequally biaxial misfit strains on the phase diagram and dielectric properties of epitaxial ferroelectric thin films

Jie Wang; Tong-Yi Zhang

Appl. Phys. Lett. 86, 192905 (2005) https://doi.org/10.1063/1.1923765

Abstract

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Intergrowth ${Bi}_{2} {WO}_{6} - {Bi}_{3} {TiNbO}_{9}$ ferroelectrics with high ionic conductivity

Z. G. Yi; Y. X. Li; Z. Y. Wen; S. R. Wang; J. T. Zeng; Q. R. Yin

Appl. Phys. Lett. 86, 192906 (2005) https://doi.org/10.1063/1.1925760

Abstract

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Study of orientation effect on nanoscale polarization in $Ba Ti O_{3}$ thin films using piezoresponse force microscopy

Il-Doo Kim; Ytshak Avrahami; Harry L. Tuller; Young-Bae Park; Matthew J. Dicken; Harry A. Atwater

Appl. Phys. Lett. 86, 192907 (2005) https://doi.org/10.1063/1.1923173

Abstract

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Priority of domain wall pinning during the fatigue period in bismuth titanate ferroelectric thin films

Wei Li; Aiping Chen; Xiaomei Lu; Jinsong Zhu; Yening Wang

Appl. Phys. Lett. 86, 192908 (2005) https://doi.org/10.1063/1.1925308

Abstract

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Memory effect in [001] poled $0.92 Pb ({Zn}_{1 ∕ 3} {Nb}_{2 ∕ 3}) O_{3} - 0.08 {PbTiO}_{3}$ single crystals

Mingrong Shen; Wenwu Cao

Appl. Phys. Lett. 86, 192909 (2005) https://doi.org/10.1063/1.1922575

Abstract

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Misfit dislocations in nanoscale ferroelectric heterostructures

V. Nagarajan; C. L. Jia; H. Kohlstedt; R. Waser; I. B. Misirlioglu; S. P. Alpay; R. Ramesh

Appl. Phys. Lett. 86, 192910 (2005) https://doi.org/10.1063/1.1922579

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Fabrication of wide-band-gap ${Mg}_{x} {Zn}_{1 - x} O$ quasi-ternary alloys by molecular-beam epitaxy

Hiroshi Tanaka; Shigeo Fujita; Shizuo Fujita

Appl. Phys. Lett. 86, 192911 (2005) https://doi.org/10.1063/1.1923762

Abstract

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NANOSCALE SCIENCE AND DESIGN

Optical properties of highly ordered AlN nanowire arrays grown on sapphire substrate

Qing Zhao; Hongzhou Zhang; Xiangyu Xu; Zhe Wang; Jun Xu; Dapeng Yu; Guohua Li; Fuhai Su

Appl. Phys. Lett. 86, 193101 (2005) https://doi.org/10.1063/1.1922577

Abstract

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Nanoscale friction mapping

Nikhil S. Tambe; Bharat Bhushan

Appl. Phys. Lett. 86, 193102 (2005) https://doi.org/10.1063/1.1923179

Abstract

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Role of phonon scattering in carbon nanotube field-effect transistors

Jing Guo; Mark Lundstrom

Appl. Phys. Lett. 86, 193103 (2005) https://doi.org/10.1063/1.1923183

Abstract

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Role of surface-to-volume ratio of metal nanoparticles in optical properties of $Cu : {Al}_{2} O_{3}$ nanocomposite films

J. Requejo-Isidro; R. del Coso; J. Solis; J. Gonzalo; C. N. Afonso

Appl. Phys. Lett. 86, 193104 (2005) https://doi.org/10.1063/1.1923198

Abstract

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Stress-driven formation of Si nanowires

S. M. Prokes; Stephen Arnold

Appl. Phys. Lett. 86, 193105 (2005) https://doi.org/10.1063/1.1925756

Abstract

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CdSe nanocrystal quantum-dot memory

M. D. Fischbein; M. Drndic

Appl. Phys. Lett. 86, 193106 (2005) https://doi.org/10.1063/1.1923189

Abstract

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An ultrasmall amplitude operation of dynamic force microscopy with second flexural mode

Shigeki Kawai; Shin-ichi Kitamura; Dai Kobayashi; Sakae Meguro; Hideki Kawakatsu

Appl. Phys. Lett. 86, 193107 (2005) https://doi.org/10.1063/1.1923200

Abstract

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True molecular resolution in liquid by frequency-modulation atomic force microscopy

Takeshi Fukuma; Kei Kobayashi; Kazumi Matsushige; Hirofumi Yamada

Appl. Phys. Lett. 86, 193108 (2005) https://doi.org/10.1063/1.1925780

Abstract

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Optoelectronic characteristics of single CdS nanobelts

Q. H. Li; T. Gao; T. H. Wang

Appl. Phys. Lett. 86, 193109 (2005) https://doi.org/10.1063/1.1923186

Abstract

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Diffraction element assisted lithography: Pattern control for photonic crystal fabrication

Cheng Lu; X. K. Hu; I. V. Mitchell; R. H. Lipson

Appl. Phys. Lett. 86, 193110 (2005) https://doi.org/10.1063/1.1924894

Abstract

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Self-assembled growth and enhanced blue emission of ${SiO}_{x} N_{y}$ -capped silicon nanowire arrays

T. Qiu; X. L. Wu; G. J. Wan; Y. F. Mei; G. G. Siu; Paul K. Chu

Appl. Phys. Lett. 86, 193111 (2005) https://doi.org/10.1063/1.1929069

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Focused-ion-beam platinum nanopatterning for GaN nanowires: Ohmic contacts and patterned growth

C. Y. Nam; J. Y. Kim; J. E. Fischer

Appl. Phys. Lett. 86, 193112 (2005) https://doi.org/10.1063/1.1925775

Abstract

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Quantum confinement in Volmer–Weber-type self-assembled ZnO nanocrystals

Tae-Bong Hur; Yoon-Hwae Hwang; Hyung-Kook Kim

Appl. Phys. Lett. 86, 193113 (2005) https://doi.org/10.1063/1.1921357

Abstract

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Optical excitation of nanoelectromechanical oscillators

B. Ilic; S. Krylov; K. Aubin; R. Reichenbach; H. G. Craighead

Appl. Phys. Lett. 86, 193114 (2005) https://doi.org/10.1063/1.1919395

Abstract

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Quantum dot lasers based on a stacked and strain-compensated active region grown by metal-organic chemical vapor deposition

N. Nuntawong; Y. C. Xin; S. Birudavolu; P. S. Wong; S. Huang; C. P. Hains; D. L. Huffaker

Appl. Phys. Lett. 86, 193115 (2005) https://doi.org/10.1063/1.1926413

Abstract

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DEVICE PHYSICS

Demonstration of a $320 \times 256$ two-color focal plane array using InAs/InGaAs quantum dots in well detectors

Sanjay Krishna; Darren Forman; Senthil Annamalai; Philip Dowd; Petros Varangis; Tom Tumolillo, Jr; Allen Gray; John Zilko; Kathy Sun; Mingguo Liu; Joe Campbell; Daniel Carothers

Appl. Phys. Lett. 86, 193501 (2005) https://doi.org/10.1063/1.1924887

Abstract

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Temperature-dependent transition to progressive breakdown in thin silicon dioxide based gate dielectrics

Jordi Suñé; Ernest Y. Wu

Appl. Phys. Lett. 86, 193502 (2005) https://doi.org/10.1063/1.1925316

Abstract

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Effects of low-temperature postannealing on a $n^{+} - p$ shallow junction fabricated by plasma doping

Sungkweon Baek; Hyunsang Hwang; Kiju Im; Chang-Geun Ahn; Jong-Heon Yang; In-Bok Baek; Seongjae Lee; Won-ju Cho

Appl. Phys. Lett. 86, 193503 (2005) https://doi.org/10.1063/1.1923758

Abstract

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Leakage currents of $Si O_{2}$ films grown on $Co {Si}_{2}$ lines and disks

S. B. Herner; C. J. Petti

Appl. Phys. Lett. 86, 193504 (2005) https://doi.org/10.1063/1.1923751

Abstract

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Operational and environmental stability of pentacene thin-film transistors

C. R. Kagan; A. Afzali; T. O. Graham

Appl. Phys. Lett. 86, 193505 (2005) https://doi.org/10.1063/1.1924890

Abstract

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Visible electroluminescence from silicon nanocrystals embedded in amorphous silicon nitride matrix

Liang-Yih Chen; Wen-Hua Chen; Franklin Chau-Nan Hong

Appl. Phys. Lett. 86, 193506 (2005) https://doi.org/10.1063/1.1925311

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Electromechanical strain in conjugated polymer diodes under forward and reverse bias

Gilles Dennler; Niyazi Serdar Sariciftci; Reinhard Schwödiauer; Siegfried Bauer; Howard Reiss

Appl. Phys. Lett. 86, 193507 (2005) https://doi.org/10.1063/1.1925779

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Feasibility of static induction transistor with organic semiconductors

Serkan Zorba; Yongli Gao

Appl. Phys. Lett. 86, 193508 (2005) https://doi.org/10.1063/1.1906306

Abstract

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Extreme ultraviolet single-crystal diamond detectors by chemical vapor deposition

A. Balducci; Marco Marinelli; E. Milani; M. E. Morgada; A. Tucciarone; G. Verona-Rinati; M. Angelone; M. Pillon

Appl. Phys. Lett. 86, 193509 (2005) https://doi.org/10.1063/1.1927709

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APPLIED BIOPHYSICS

Direct force measurements of biomolecular interactions by nanomechanical force gauge

Ki-Hun Jeong; Chris G. Keller; Luke P. Lee

Appl. Phys. Lett. 86, 193901 (2005) https://doi.org/10.1063/1.1906332

Abstract

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INTERDISCIPLINARY AND GENERAL PHYSICS

Time-difference between the electric field components of signals prior to major earthquakes

P. A. Varotsos; N. V. Sarlis; E. S. Skordas

Appl. Phys. Lett. 86, 194101 (2005) https://doi.org/10.1063/1.1924870

Abstract

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Supplementary Material

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Midinfrared sensors meet nanotechnology: Trace gas sensing with quantum cascade lasers inside photonic band-gap hollow waveguides

Christy Charlton; Burak Temelkuran; Gregor Dellemann; Boris Mizaikoff

Appl. Phys. Lett. 86, 194102 (2005) https://doi.org/10.1063/1.1925777

Abstract

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Rotational motion of microsphere packs on acoustically excited surfaces

M. D. Murthy Peri; Cetin Cetinkaya

Appl. Phys. Lett. 86, 194103 (2005) https://doi.org/10.1063/1.1926417

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COMMENTS

Comment on “The photocapacitor: An efficient self-charging capacitor for direct storage of solar energy” [Appl. Phys. Lett. 85, 3932 (2004)]

Arturo Morales-Acevedo

Appl. Phys. Lett. 86, 196101 (2005) https://doi.org/10.1063/1.1922589

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Response to “Comment on ‘The photocapacitor: An efficient self-charging capacitor for direct storage of solar energy’” [Appl. Phys. Lett. 86, 196101 (2005)]

Tsutomu Miyasaka; Takurou N. Murakami

Appl. Phys. Lett. 86, 196102 (2005) https://doi.org/10.1063/1.1922580

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Issues

LASERS, OPTICS, AND OPTOELECTRONICS

PLASMAS AND ELECTRICAL DISCHARGES

STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

ELECTRONIC TRANSPORT AND SEMICONDUCTORS

MAGNETISM AND SUPERCONDUCTIVITY

DIELECTRICS AND FERROELECTRICITY

NANOSCALE SCIENCE AND DESIGN

DEVICE PHYSICS

APPLIED BIOPHYSICS

INTERDISCIPLINARY AND GENERAL PHYSICS

COMMENTS

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