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LASERS, OPTICS, AND OPTOELECTRONICS

Ultralow-power all-optical switching

Marin Soljačić; Elefterios Lidorikis; J. D. Joannopoulos; Lene Vestergaard Hau

Appl. Phys. Lett. 86, 171101 (2005) https://doi.org/10.1063/1.1900956

Abstract

View articletitled, Ultralow-power all-optical switching

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Optical observation of donor-bound excitons in hydrogen-implanted ZnO

J.-K. Lee; M. Nastasi; D. W. Hamby; D. A. Lucca

Appl. Phys. Lett. 86, 171102 (2005) https://doi.org/10.1063/1.1906330

Abstract

View articletitled, Optical observation of donor-bound excitons in hydrogen-implanted ZnO

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Unidirectional beam emission from strained InGaAsP multiple-quantum-well quasistadium laser diodes

Takehiro Fukushima; Tomoko Tanaka; Takahisa Harayama

Appl. Phys. Lett. 86, 171103 (2005) https://doi.org/10.1063/1.1920430

Abstract

View articletitled, Unidirectional beam emission from strained InGaAsP multiple-quantum-well quasistadium laser diodes

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An approach to the design of highly selective resonant-cavity-enhanced photodetectors

A. Ramam; G. K. Chowdhury; S. J. Chua

Appl. Phys. Lett. 86, 171104 (2005) https://doi.org/10.1063/1.1914964

Abstract

View articletitled, An approach to the design of highly selective resonant-cavity-enhanced photodetectors

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Self-stabilized and dispersion-compensated passively mode-locked Yb:Yttrium aluminum garnet laser

A. Agnesi; A. Guandalini; G. Reali

Appl. Phys. Lett. 86, 171105 (2005) https://doi.org/10.1063/1.1914965

Abstract

View articletitled, Self-stabilized and dispersion-compensated passively mode-locked Yb:Yttrium aluminum garnet laser

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Line-defect–waveguide laser integrated with a point defect in a two-dimensional photonic crystal slab

Atsushi Sugitatsu; Takashi Asano; Susumu Noda

Appl. Phys. Lett. 86, 171106 (2005) https://doi.org/10.1063/1.1920429

Abstract

View articletitled, Line-defect–waveguide laser integrated with a point defect in a two-dimensional photonic crystal slab

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Decomposition of ${KH}_{2} {PO}_{4}$ crystals during laser-induced breakdown

R. A. Negres; S. O. Kucheyev; P. DeMange; C. Bostedt; T. van Buuren; A. J. Nelson; S. G. Demos

Appl. Phys. Lett. 86, 171107 (2005) https://doi.org/10.1063/1.1921349

Abstract

View articletitled, Decomposition of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>KH</mi><mn>2</mn></msub><msub><mi>PO</mi><mn>4</mn></msub></mrow></math> crystals during laser-induced breakdown

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Enhanced electrophosphorescence via highly efficient energy transfer from conjugated polymer

Tae-Ho Kim; Dong-Hee Yoo; Jong Hyeok Park; O Ok Park; Jae-Woong Yu; Jai Kyeong Kim

Appl. Phys. Lett. 86, 171108 (2005) https://doi.org/10.1063/1.1921356

Abstract

View articletitled, Enhanced electrophosphorescence via highly efficient energy transfer from conjugated polymer

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Collective behavior and disorder-induced resonator of random lasers

Sheng Li; Zi-Jun Wang; Liang-Shan Chen; Xin Sun; Thomas F. George

Appl. Phys. Lett. 86, 171109 (2005) https://doi.org/10.1063/1.1920409

Abstract

View articletitled, Collective behavior and disorder-induced resonator of random lasers

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Terahertz gain in optically excited biased semiconductor superlattices

Aizhen Zhang; Dawei Wang; M. M. Dignam

Appl. Phys. Lett. 86, 171110 (2005) https://doi.org/10.1063/1.1922079

Abstract

View articletitled, Terahertz gain in optically excited biased semiconductor superlattices

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PLASMAS AND ELECTRICAL DISCHARGES

Electron prebunching in microwave magnetron by electric priming using anode shape modification

J. I. Kim; J. H. Won; G. S. Park

Appl. Phys. Lett. 86, 171501 (2005) https://doi.org/10.1063/1.1896098

Abstract

View articletitled, Electron prebunching in microwave magnetron by electric priming using anode shape modification

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Rf-assisted magnetohydrodynamic power generation in a pure-argon plasma

Tomoyuki Murakami; Yoshihiro Okuno; Hiroyuki Yamasaki

Appl. Phys. Lett. 86, 171502 (2005) https://doi.org/10.1063/1.1920420

Abstract

View articletitled, Rf-assisted magnetohydrodynamic power generation in a pure-argon plasma

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Optical properties of GaN quantum dots grown on nonpolar (11-20) SiC by molecular-beam epitaxy

S. Founta; F. Rol; E. Bellet-Amalric; J. Bleuse; B. Daudin; B. Gayral; H. Mariette; C. Moisson

Appl. Phys. Lett. 86, 171901 (2005) https://doi.org/10.1063/1.1905807

Abstract

View articletitled, Optical properties of GaN quantum dots grown on nonpolar (11-20) SiC by molecular-beam epitaxy

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Strong $1.3 - 1.6 μ m$ light emission from metamorphic InGaAs quantum wells on GaAs

I. Tångring; S. M. Wang; Q. F. Gu; Y. Q. Wei; M. Sadeghi; A. Larsson; Q. X. Zhao; M. N. Akram; J. Berggren

Appl. Phys. Lett. 86, 171902 (2005) https://doi.org/10.1063/1.1906308

Abstract

View articletitled, Strong <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>1.3</mn><mo>–</mo><mn>1.6</mn><mspace width="0.3em"></mspace><mi>μ</mi><mi mathvariant="normal">m</mi></mrow></math> light emission from metamorphic InGaAs quantum wells on GaAs

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Luminescent silicon carbide nanocrystallites in 3C-SiC∕polystyrene films

J. Y. Fan; X. L. Wu; F. Kong; T. Qiu; G. S. Huang

Appl. Phys. Lett. 86, 171903 (2005) https://doi.org/10.1063/1.1914962

Abstract

View articletitled, Luminescent silicon carbide nanocrystallites in 3C-SiC∕polystyrene films

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Measurement of the refractive index of a magnetic fluid by the retroreflection on the fiber-optic end face

Shengli Pu; Xianfeng Chen; Yuping Chen; Weijun Liao; Lijun Chen; Yuxing Xia

Appl. Phys. Lett. 86, 171904 (2005) https://doi.org/10.1063/1.1905808

Abstract

View articletitled, Measurement of the refractive index of a magnetic fluid by the retroreflection on the fiber-optic end face

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Improved visible photoluminescence from porous silicon with surface Si–Ag bonds

J. Sun; Y. W. Lu; X. W. Du; S. A. Kulinich

Appl. Phys. Lett. 86, 171905 (2005) https://doi.org/10.1063/1.1920426

Abstract

View articletitled, Improved visible photoluminescence from porous silicon with surface Si–Ag bonds

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Control of the electrical and adhesion properties of metal/organic interfaces with self-assembled monolayers

Jeong Ho Cho; Jung Ah Lim; Joong Tark Han; Ho Won Jang; Jong-Lam Lee; Kilwon Cho

Appl. Phys. Lett. 86, 171906 (2005) https://doi.org/10.1063/1.1914961

Abstract

View articletitled, Control of the electrical and adhesion properties of metal/organic interfaces with self-assembled monolayers

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Surface preparation of Si(001) substrate using low- $p H$ HF solution

Yukinori Morita; Masayasu Nishizawa

Appl. Phys. Lett. 86, 171907 (2005) https://doi.org/10.1063/1.1915515

Abstract

View articletitled, Surface preparation of Si(001) substrate using low-<math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>p</mi><mi mathvariant="normal">H</mi></mrow></math> HF solution

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Atomically flat (110) ${SrTiO}_{3}$ and heteroepitaxy

Y. Mukunoki; N. Nakagawa; T. Susaki; H. Y. Hwang

Appl. Phys. Lett. 86, 171908 (2005) https://doi.org/10.1063/1.1920415

Abstract

View articletitled, Atomically flat (110) <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>SrTiO</mi><mn>3</mn></msub></mrow></math> and heteroepitaxy

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Propagation of shear bands in ${Ti}_{66.1} {Cu}_{8} {Ni}_{4.8} {Sn}_{7.2} {Nb}_{13.9}$ nanostructure-dendrite composite during deformation

K. B. Kim; J. Das; F. Baier; J. Eckert

Appl. Phys. Lett. 86, 171909 (2005) https://doi.org/10.1063/1.1920424

Abstract

View articletitled, Propagation of shear bands in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>Ti</mi><mn>66.1</mn></msub><msub><mi>Cu</mi><mn>8</mn></msub><msub><mi>Ni</mi><mn>4.8</mn></msub><msub><mi>Sn</mi><mn>7.2</mn></msub><msub><mi>Nb</mi><mn>13.9</mn></msub></mrow></math> nanostructure-dendrite composite during deformation

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Selective metallization of internal walls of hollow structures inside glass using femtosecond laser

Koji Sugioka; Tomohiro Hongo; Hiroshi Takai; Katsumi Midorikawa

Appl. Phys. Lett. 86, 171910 (2005) https://doi.org/10.1063/1.1921355

Abstract

View articletitled, Selective metallization of internal walls of hollow structures inside glass using femtosecond laser

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Strain-compensated AlInGaAs–GaAsP superlattices for highly polarized electron emission

A. V. Subashiev; L. G. Gerchikov; Y. A. Mamaev; Y. P. Yashin; J. S. Roberts; D.-A. Luh; T. Maruyama; J. E. Clendenin

Appl. Phys. Lett. 86, 171911 (2005) https://doi.org/10.1063/1.1920416

Abstract

View articletitled, Strain-compensated AlInGaAs–GaAsP superlattices for highly polarized electron emission

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Thermal and electrical conductivity of a suspended platinum nanofilm

Xing Zhang; Huaqing Xie; Motoo Fujii; Hiroki Ago; Koji Takahashi; Tatsuya Ikuta; Hidekazu Abe; Tetsuo Shimizu

Appl. Phys. Lett. 86, 171912 (2005) https://doi.org/10.1063/1.1921350

Abstract

View articletitled, Thermal and electrical conductivity of a suspended platinum nanofilm

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Superhard nanocrystalline silicon carbide films

Feng Liao; S. L. Girshick; W. M. Mook; W. W. Gerberich; M. R. Zachariah

Appl. Phys. Lett. 86, 171913 (2005) https://doi.org/10.1063/1.1920434

Abstract

View articletitled, Superhard nanocrystalline silicon carbide films

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Anomalous interfacial diffusion in immiscible metallic multilayers: a size-dependent kinetic approach

G. Ouyang; C. X. Wang; G. W. Yang

Appl. Phys. Lett. 86, 171914 (2005) https://doi.org/10.1063/1.1920413

Abstract

View articletitled, Anomalous interfacial diffusion in immiscible metallic multilayers: a size-dependent kinetic approach

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Synthesis kinetics of CdSe quantum dots in trioctylphosphine oxide and in stearic acid

B. D. Dickerson; D. M. Irving; E. Herz; R. O. Claus; W. B. Spillman, Jr.; K. E. Meissner

Appl. Phys. Lett. 86, 171915 (2005) https://doi.org/10.1063/1.1921347

Abstract

View articletitled, Synthesis kinetics of CdSe quantum dots in trioctylphosphine oxide and in stearic acid

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Effects of tensile stress induced by silicon nitride passivation on electrical characteristics of $AlGaN ∕ GaN$ heterostructure field-effect transistors

Chang Min Jeon; Jong-Lam Lee

Appl. Phys. Lett. 86, 172101 (2005) https://doi.org/10.1063/1.1906328

Abstract

View articletitled, Effects of tensile stress induced by silicon nitride passivation on electrical characteristics of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>AlGaN</mi><mo>∕</mo><mi>GaN</mi></mrow></math> heterostructure field-effect transistors

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Inducing and monitoring photoelectrochemical reactions at surfaces and buried interfaces in $Cu (In, Ga) {(S, Se)}_{2}$ thin-film solar cells

J. Reichardt; M. Bär; A. Grimm; I. Kötschau; I. Lauermann; S. Sokoll; M. C. Lux-Steiner; Ch.-H. Fischer; C. Heske; L. Weinhardt; O. Fuchs; Ch. Jung; W. Gudat; T. P. Niesen; F. Karg

Appl. Phys. Lett. 86, 172102 (2005) https://doi.org/10.1063/1.1906309

Abstract

View articletitled, Inducing and monitoring photoelectrochemical reactions at surfaces and buried interfaces in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Cu</mi><mrow><mo>(</mo><mi mathvariant="normal">In</mi><mo>,</mo><mi mathvariant="normal">Ga</mi><mo>)</mo></mrow><msub><mrow><mo>(</mo><mi mathvariant="normal">S</mi><mo>,</mo><mi mathvariant="normal">Se</mi><mo>)</mo></mrow><mn>2</mn></msub></mrow></math> thin-film solar cells

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Characteristics of unannealed $Zn Mg O ∕ Zn O$ $p - n$ junctions on bulk (100) ZnO substrates

Hyucksoo Yang; Y. Li; D. P. Norton; S. J. Pearton; Soohwan Jung; F. Ren; L. A. Boatner

Appl. Phys. Lett. 86, 172103 (2005) https://doi.org/10.1063/1.1906284

Abstract

View articletitled, Characteristics of unannealed <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Zn</mi><mi mathvariant="normal">Mg</mi><mi mathvariant="normal">O</mi><mo>∕</mo><mi mathvariant="normal">Zn</mi><mi mathvariant="normal">O</mi></mrow></math> <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>p</mi><mtext>-</mtext><mi>n</mi></mrow></math> junctions on bulk (100) ZnO substrates

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Local measurement of surface states energy distribution in semiconductors using Kelvin probe force microscope

S. Saraf; M. Molotskii; Y. Rosenwaks

Appl. Phys. Lett. 86, 172104 (2005) https://doi.org/10.1063/1.1906296

Abstract

View articletitled, Local measurement of surface states energy distribution in semiconductors using Kelvin probe force microscope

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Direct measurement of forces during scanning tunneling microscopy imaging of silicon pn junctions

Jeong Young Park; R. J. Phaneuf; D. F. Ogletree; M. Salmeron

Appl. Phys. Lett. 86, 172105 (2005) https://doi.org/10.1063/1.1906297

Abstract

View articletitled, Direct measurement of forces during scanning tunneling microscopy imaging of silicon pn junctions

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Infrared phototransistor using capacitively coupled two-dimensional electron gas layers

Zhenghua An; Jeng-Chung Chen; T. Ueda; S. Komiyama; K. Hirakawa

Appl. Phys. Lett. 86, 172106 (2005) https://doi.org/10.1063/1.1920425

Abstract

View articletitled, Infrared phototransistor using capacitively coupled two-dimensional electron gas layers

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Retention behavior of the electric-pulse-induced reversible resistance change effect in $Ag - {La}_{0.7} {Ca}_{0.3} {MnO}_{3} - Pt$ sandwiches

R. Dong; Q. Wang; L. D. Chen; D. S. Shang; T. L. Chen; X. M. Li; W. Q. Zhang

Appl. Phys. Lett. 86, 172107 (2005) https://doi.org/10.1063/1.1915529

Abstract

View articletitled, Retention behavior of the electric-pulse-induced reversible resistance change effect in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>Ag</mi><mo>–</mo><msub><mi>La</mi><mn>0.7</mn></msub><msub><mi>Ca</mi><mn>0.3</mn></msub><msub><mi>MnO</mi><mn>3</mn></msub><mo>–</mo><mi>Pt</mi></mrow></math> sandwiches

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Large open-circuit voltage improvement by rapid thermal annealing of evaporated solid-phase-crystallized thin-film silicon solar cells on glass

Mason L. Terry; Axel Straub; Daniel Inns; Dengyuan Song; Armin G. Aberle

Appl. Phys. Lett. 86, 172108 (2005) https://doi.org/10.1063/1.1921352

Abstract

View articletitled, Large open-circuit voltage improvement by rapid thermal annealing of evaporated solid-phase-crystallized thin-film silicon solar cells on glass

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MAGNETISM AND SUPERCONDUCTIVITY

Ultranarrow AuPd and Al wires

Fabio Altomare; Albert M. Chang; Michael R. Melloch; Yuguang Hong; Charles W. Tu

Appl. Phys. Lett. 86, 172501 (2005) https://doi.org/10.1063/1.1905806

Abstract

View articletitled, Ultranarrow AuPd and Al wires

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All- ${MgB}_{2}$ Josephson tunnel junctions

K. Ueda; S. Saito; K. Semba; T. Makimoto; M. Naito

Appl. Phys. Lett. 86, 172502 (2005) https://doi.org/10.1063/1.1920411

Abstract

View articletitled, All-<math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>MgB</mi><mn>2</mn></msub></mrow></math> Josephson tunnel junctions

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Exchange-bias stabilization of the magnetic nanoparticles in a granular alloy grown by reactive sputtering

J. M. Riveiro; J. A. De Toro; J. P. Andrés; J. A. González; T. Muñoz; J. P. Goff

Appl. Phys. Lett. 86, 172503 (2005) https://doi.org/10.1063/1.1921353

Abstract

View articletitled, Exchange-bias stabilization of the magnetic nanoparticles in a granular alloy grown by reactive sputtering

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Origin of transition metal clustering tendencies in GaAs based dilute magnetic semiconductors

Priya Mahadevan; J. M. Osorio-Guillén; Alex Zunger

Appl. Phys. Lett. 86, 172504 (2005) https://doi.org/10.1063/1.1921359

Abstract

View articletitled, Origin of transition metal clustering tendencies in GaAs based dilute magnetic semiconductors

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DIELECTRICS AND FERROELECTRICITY

Size dependence of initial polarization direction in nanosized epitaxial ${PbTiO}_{3}$ islands fabricated by hydrothermal epitaxy below Curie temperature

S. H. Ahn; W. W. Jung; S. K. Choi

Appl. Phys. Lett. 86, 172901 (2005) https://doi.org/10.1063/1.1920431

Abstract

View articletitled, Size dependence of initial polarization direction in nanosized epitaxial <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi>PbTiO</mi><mn>3</mn></msub></math> islands fabricated by hydrothermal epitaxy below Curie temperature

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Polar behavior in Mn-doped ${SrTiO}_{3}$ ceramics

A. Tkach; P. M. Vilarinho; A. L. Kholkin

Appl. Phys. Lett. 86, 172902 (2005) https://doi.org/10.1063/1.1920414

Abstract

View articletitled, Polar behavior in Mn-doped <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>SrTiO</mi><mn>3</mn></msub></mrow></math> ceramics

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Plasma-nitrided silicon-rich oxide as an extension to ultrathin nitrided oxide gate dielectrics

F. N. Cubaynes; V. C. Venezia; C. van der Marel; J. H. M. Snijders; J. L. Everaert; X. Shi; A. Rothschild; M. Schaekers

Appl. Phys. Lett. 86, 172903 (2005) https://doi.org/10.1063/1.1915523

Abstract

View articletitled, Plasma-nitrided silicon-rich oxide as an extension to ultrathin nitrided oxide gate dielectrics

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Ferroelectric and piezoelectric properties of lanthanoid-substituted ${Bi}_{4} {Ti}_{3} O_{12}$ thin films grown on (111)Pt and $(100) {IrO}_{2}$ electrodes

Yutaka Adachi; Dong Su; Paul Muralt; Nava Setter

Appl. Phys. Lett. 86, 172904 (2005) https://doi.org/10.1063/1.1915512

Abstract

View articletitled, Ferroelectric and piezoelectric properties of lanthanoid-substituted <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>Bi</mi><mn>4</mn></msub><msub><mi>Ti</mi><mn>3</mn></msub><msub><mi mathvariant="normal">O</mi><mn>12</mn></msub></mrow></math> thin films grown on (111)Pt and <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mrow><mo>(</mo><mn>100</mn><mo>)</mo></mrow><msub><mi>IrO</mi><mn>2</mn></msub></mrow></math> electrodes

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Rescaled temperature dependence of dielectric behavior of ferroelectric polymer composites

Zhi-Min Dang; Lan Wang; Hai-Yan Wang; Ce-Wen Nan; Dan Xie; Yi Yin; S. C. Tjong

Appl. Phys. Lett. 86, 172905 (2005) https://doi.org/10.1063/1.1920408

Abstract

View articletitled, Rescaled temperature dependence of dielectric behavior of ferroelectric polymer composites

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Ferroelectric response from lead zirconate titanate thin films prepared directly on low-resistivity copper substrates

Mark D. Losego; Leslie H. Jimison; Jon F. Ihlefeld; Jon-Paul Maria

Appl. Phys. Lett. 86, 172906 (2005) https://doi.org/10.1063/1.1919388

Abstract

View articletitled, Ferroelectric response from lead zirconate titanate thin films prepared directly on low-resistivity copper substrates

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NANOSCALE SCIENCE AND DESIGN

Laterally aligned, multiwalled carbon nanotube growth using Magnetospirillium magnetotacticum

Nitin Kumar; Wayne Curtis; Jong-in Hahm

Appl. Phys. Lett. 86, 173101 (2005) https://doi.org/10.1063/1.1906283

Abstract

View articletitled, Laterally aligned, multiwalled carbon nanotube growth using Magnetospirillium magnetotacticum

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Thermal conductivity of B–C–N and BN nanotubes

C. W. Chang; Wei-Qiang Han; A. Zettl

Appl. Phys. Lett. 86, 173102 (2005) https://doi.org/10.1063/1.1914963

Abstract

View articletitled, Thermal conductivity of B–C–N and BN nanotubes

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In situ nanointerconnection for nanoelectronics via direct auto-catalytic lateral growth

Yun-Hi Lee; Y. T. Jang; B. K. Ju

Appl. Phys. Lett. 86, 173103 (2005) https://doi.org/10.1063/1.1915530

Abstract

View articletitled, In situ nanointerconnection for nanoelectronics via direct auto-catalytic lateral growth

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Inorganic polymer-derived tubular SiC arrays from sacrificial alumina templates

Hao Wang; Xiao-Dong Li; Taek-Soo Kim; Dong-Pyo Kim

Appl. Phys. Lett. 86, 173104 (2005) https://doi.org/10.1063/1.1915510

Abstract

View articletitled, Inorganic polymer-derived tubular SiC arrays from sacrificial alumina templates

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CdS nanobelts as photoconductors

T. Gao; Q. H. Li; T. H. Wang

Appl. Phys. Lett. 86, 173105 (2005) https://doi.org/10.1063/1.1915514

Abstract

View articletitled, CdS nanobelts as photoconductors

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Combinatorial method to prepare metal nanoparticles that catalyze the growth of single-walled carbon nanotubes

Suguru Noda; Yoshiko Tsuji; Yoichi Murakami; Shigeo Maruyama

Appl. Phys. Lett. 86, 173106 (2005) https://doi.org/10.1063/1.1920417

Abstract

View articletitled, Combinatorial method to prepare metal nanoparticles that catalyze the growth of single-walled carbon nanotubes

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Current-controlled nanotube growth and zone refinement

K. Jensen; W. Mickelson; W. Han; A. Zettl

Appl. Phys. Lett. 86, 173107 (2005) https://doi.org/10.1063/1.1920427

Abstract

View articletitled, Current-controlled nanotube growth and zone refinement

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Metal nanoparticles-embedded three-dimensional microstructures created by single-beam holography

Yi Yang; Guo Ping Wang; Jiang Xie; Suhuai Zhang

Appl. Phys. Lett. 86, 173108 (2005) https://doi.org/10.1063/1.1920423

Abstract

View articletitled, Metal nanoparticles-embedded three-dimensional microstructures created by single-beam holography

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Ultrafast carrier capture at room temperature in $InAs ∕ InP$ quantum dots emitting in the $1.55 μ m$ wavelength region

E. W. Bogaart; R. Nötzel; Q. Gong; J. E. M. Haverkort; J. H. Wolter

Appl. Phys. Lett. 86, 173109 (2005) https://doi.org/10.1063/1.1915527

Abstract

View articletitled, Ultrafast carrier capture at room temperature in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>InAs</mi><mo>∕</mo><mi>InP</mi></mrow></math> quantum dots emitting in the <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>1.55</mn><mspace width="0.3em"></mspace><mi>μ</mi><mi mathvariant="normal">m</mi></mrow></math> wavelength region

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Magnetic nanobelts of iron-doped zinc oxide

C. X. Xu; X. W. Sun; Z. L. Dong; M. B. Yu; Yong Zhong Xiong; J. S. Chen

Appl. Phys. Lett. 86, 173110 (2005) https://doi.org/10.1063/1.1919391

Abstract

View articletitled, Magnetic nanobelts of iron-doped zinc oxide

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Formation of ZnS/ ${SiO}_{2}$ nanocables

Xia Fan; Xiang-Min Meng; Xiao-Hong Zhang; Shi-Kang Wu; Shuit-Tong Lee

Appl. Phys. Lett. 86, 173111 (2005) https://doi.org/10.1063/1.1919394

Abstract

View articletitled, Formation of ZnS/<math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi>SiO</mi><mn>2</mn></msub></math> nanocables

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Mixing with the radio frequency single-electron transistor

L. J. Swenson; D. R. Schmidt; J. S. Aldridge; D. K. Wood; A. N. Cleland

Appl. Phys. Lett. 86, 173112 (2005) https://doi.org/10.1063/1.1923188

Abstract

View articletitled, Mixing with the radio frequency single-electron transistor

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Growth-temperature-dependent cathodoluminescence properties of GaSb/GaAs quantum-dot multilayer structures

Krystyna Drozdowicz-Tomsia; Ewa M. Goldys; Motlan Motlan; Hadi Zareie; Matthew R. Phillips

Appl. Phys. Lett. 86, 173113 (2005) https://doi.org/10.1063/1.1920418

Abstract

View articletitled, Growth-temperature-dependent cathodoluminescence properties of GaSb/GaAs quantum-dot multilayer structures

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DEVICE PHYSICS

Passivation of $InAs ∕ (GaIn) Sb$ short-period superlattice photodiodes with $10 μ m$ cutoff wavelength by epitaxial overgrowth with ${Al}_{x} {Ga}_{1 - x} {As}_{y} {Sb}_{1 - y}$

Robert Rehm; Martin Walther; Frank Fuchs; Johannes Schmitz; Joachim Fleissner

Appl. Phys. Lett. 86, 173501 (2005) https://doi.org/10.1063/1.1906326

Abstract

View articletitled, Passivation of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>InAs</mi><mo>∕</mo><mrow><mo>(</mo><mi>GaIn</mi><mo>)</mo></mrow><mi>Sb</mi></mrow></math> short-period superlattice photodiodes with <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>10</mn><mspace width="0.3em"></mspace><mi>μ</mi><mi mathvariant="normal">m</mi></mrow></math> cutoff wavelength by epitaxial overgrowth with <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>Al</mi><mi>x</mi></msub><msub><mi>Ga</mi><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub><msub><mi>As</mi><mi>y</mi></msub><msub><mi>Sb</mi><mrow><mn>1</mn><mo>−</mo><mi>y</mi></mrow></msub></mrow></math>

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Detection of halide ions with $Al Ga N ∕ Ga N$ high electron mobility transistors

B. S. Kang; F. Ren; M. C. Kang; C. Lofton; Weihong Tan; S. J. Pearton; A. Dabiran; A. Osinsky; P. P. Chow

Appl. Phys. Lett. 86, 173502 (2005) https://doi.org/10.1063/1.1920433

Abstract

View articletitled, Detection of halide ions with <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Al</mi><mi mathvariant="normal">Ga</mi><mi mathvariant="normal">N</mi><mo>∕</mo><mi mathvariant="normal">Ga</mi><mi mathvariant="normal">N</mi></mrow></math> high electron mobility transistors

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Self-heating study of an $Al Ga N ∕ Ga N$ -based heterostructure field-effect transistor using ultraviolet micro-Raman scattering

I. Ahmad; V. Kasisomayajula; M. Holtz; J. M. Berg; S. R. Kurtz; C. P. Tigges; A. A. Allerman; A. G. Baca

Appl. Phys. Lett. 86, 173503 (2005) https://doi.org/10.1063/1.1906305

Abstract

View articletitled, Self-heating study of an <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Al</mi><mi mathvariant="normal">Ga</mi><mi mathvariant="normal">N</mi><mo>∕</mo><mi mathvariant="normal">Ga</mi><mi mathvariant="normal">N</mi></mrow></math>-based heterostructure field-effect transistor using ultraviolet micro-Raman scattering

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Nitride deep-ultraviolet light-emitting diodes with microlens array

M. Khizar; Z. Y. Fan; K. H. Kim; J. Y. Lin; H. X. Jiang

Appl. Phys. Lett. 86, 173504 (2005) https://doi.org/10.1063/1.1914960

Abstract

View articletitled, Nitride deep-ultraviolet light-emitting diodes with microlens array

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Formation of ohmic contacts for both holes and electrons to organic semiconductor films

Kouji Suemori; Masaaki Yokoyama; Masahiro Hiramoto

Appl. Phys. Lett. 86, 173505 (2005) https://doi.org/10.1063/1.1915532

Abstract

View articletitled, Formation of ohmic contacts for both holes and electrons to organic semiconductor films

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Green electroluminescence from an ionic iridium complex

Jason D. Slinker; Cheong Y. Koh; George G. Malliaras; Michael S. Lowry; Stefan Bernhard

Appl. Phys. Lett. 86, 173506 (2005) https://doi.org/10.1063/1.1919387

Abstract

View articletitled, Green electroluminescence from an ionic iridium complex

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Noise properties of the Bloch oscillating transistor

René Lindell; Pertti Hakonen

Appl. Phys. Lett. 86, 173507 (2005) https://doi.org/10.1063/1.1919392

Abstract

View articletitled, Noise properties of the Bloch oscillating transistor

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Cooling of bulk material by electron-tunneling refrigerators

A. M. Clark; N. A. Miller; A. Williams; S. T. Ruggiero; G. C. Hilton; L. R. Vale; J. A. Beall; K. D. Irwin; J. N. Ullom

Appl. Phys. Lett. 86, 173508 (2005) https://doi.org/10.1063/1.1914966

Abstract

View articletitled, Cooling of bulk material by electron-tunneling refrigerators

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Impact of Hf content on negative bias temperature instabilities in HfSiON-based gate stacks

M. Houssa; M. Aoulaiche; S. Van Elshocht; S. De Gendt; G. Groeseneken; M. M. Heyns

Appl. Phys. Lett. 86, 173509 (2005) https://doi.org/10.1063/1.1915513

Abstract

View articletitled, Impact of Hf content on negative bias temperature instabilities in HfSiON-based gate stacks

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Micromachined chemical sensor with dual-transduction mechanisms

Ing-Shin Chen; Michele Stawasz; Susan K. DiMascio; James J. Welch; Jeffrey W. Neuner; Philip S. H. Chen; Frank DiMeo, Jr.

Appl. Phys. Lett. 86, 173510 (2005) https://doi.org/10.1063/1.1915541

Abstract

View articletitled, Micromachined chemical sensor with dual-transduction mechanisms

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Interface defects in $Si ∕ {HfO}_{2}$ -based metal-oxide-semiconductor field-effect transistors

T. G. Pribicko; J. P. Campbell; P. M. Lenahan; W. Tsai; A. Kerber

Appl. Phys. Lett. 86, 173511 (2005) https://doi.org/10.1063/1.1919397

Abstract

View articletitled, Interface defects in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>Si</mi><mo>∕</mo><msub><mi>HfO</mi><mn>2</mn></msub></mrow></math>-based metal-oxide-semiconductor field-effect transistors

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INTERDISCIPLINARY AND GENERAL PHYSICS

Optical conveyor belt for delivery of submicron objects

Tomáš Čižmár; Veneranda Garcés-Chávez; Kishan Dholakia; Pavel Zemánek

Appl. Phys. Lett. 86, 174101 (2005) https://doi.org/10.1063/1.1915543

Abstract

View articletitled, Optical conveyor belt for delivery of submicron objects

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Surface-charge lithography for GaN microstructuring based on photoelectrochemical etching techniques

I. M. Tiginyanu; V. Popa; O. Volciuc

Appl. Phys. Lett. 86, 174102 (2005) https://doi.org/10.1063/1.1919393

Abstract

View articletitled, Surface-charge lithography for GaN microstructuring based on photoelectrochemical etching techniques

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Stationary entanglement of atoms induced by classical field

Özgür Çakir; Alexander A. Klyachko; Alexander S. Shumovsky

Appl. Phys. Lett. 86, 174103 (2005) https://doi.org/10.1063/1.1915524

Abstract

View articletitled, Stationary entanglement of atoms induced by classical field

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Analytical investigations on breakup of viscous liquid droplets on surface tension modulation during welding metal transfer

Suman Chakraborty

Appl. Phys. Lett. 86, 174104 (2005) https://doi.org/10.1063/1.1915531

Abstract

View articletitled, Analytical investigations on breakup of viscous liquid droplets on surface tension modulation during welding metal transfer

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Leak detection in spacecraft using structure-borne noise with distributed sensors

Stephen D. Holland; Ron Roberts; D. E. Chimenti; Michael Strei

Appl. Phys. Lett. 86, 174105 (2005) https://doi.org/10.1063/1.1906324

Abstract

View articletitled, Leak detection in spacecraft using structure-borne noise with distributed sensors

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Issues

LASERS, OPTICS, AND OPTOELECTRONICS

PLASMAS AND ELECTRICAL DISCHARGES

STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

ELECTRONIC TRANSPORT AND SEMICONDUCTORS

MAGNETISM AND SUPERCONDUCTIVITY

DIELECTRICS AND FERROELECTRICITY

NANOSCALE SCIENCE AND DESIGN

DEVICE PHYSICS

INTERDISCIPLINARY AND GENERAL PHYSICS

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