Skip Nav Destination

Issues

Select Decade

Select Year

Issue

LASERS, OPTICS, AND OPTOELECTRONICS

Three-dimensional macroporous silicon photonic crystal with large photonic band gap

J. Schilling; J. White; A. Scherer; G. Stupian; R. Hillebrand; U. Gösele

Appl. Phys. Lett. 86, 011101 (2005) https://doi.org/10.1063/1.1842855

Abstract

View articletitled, Three-dimensional macroporous silicon photonic crystal with large photonic band gap

Open the PDF for in another window

Optical probing of sample heating in scanning near-field experiments with apertured probes

G. Latini; A. Downes; O. Fenwick; A. Ambrosio; M. Allegrini; C. Daniel; C. Silva; P. G. Gucciardi; S. Patanè; R. Daik; W. J. Feast; F. Cacialli

Appl. Phys. Lett. 86, 011102 (2005) https://doi.org/10.1063/1.1842860

Abstract

View articletitled, Optical probing of sample heating in scanning near-field experiments with apertured probes

Open the PDF for in another window

Backscattering limitation for fiber-optic quantum key distribution systems

Darius Subacius; Anton Zavriyev; Alexei Trifonov

Appl. Phys. Lett. 86, 011103 (2005) https://doi.org/10.1063/1.1842862

Abstract

View articletitled, Backscattering limitation for fiber-optic quantum key distribution systems

Open the PDF for in another window

Reshaping of a second-harmonic curve in periodically poled $Ti : Li Nb O_{3}$ channel waveguide by a local-temperature-control technique

Yeung Lak Lee; Young-Chul Noh; Changsoo Jung; Tae Jun Yu; Bong-Ahn Yu; Jongmin Lee; Do-Kyeong Ko; Kyunghwan Oh

Appl. Phys. Lett. 86, 011104 (2005) https://doi.org/10.1063/1.1842854

Abstract

View articletitled, Reshaping of a second-harmonic curve in periodically poled <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Ti</mi><mo>:</mo><mi mathvariant="normal">Li</mi><mi mathvariant="normal">Nb</mi><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub></mrow></math> channel waveguide by a local-temperature-control technique

Open the PDF for in another window

Intense switchable fluorescence in light wave coupled electrowetting devices

J. Heikenfeld; A. J. Steckl

Appl. Phys. Lett. 86, 011105 (2005) https://doi.org/10.1063/1.1842853

Abstract

View articletitled, Intense switchable fluorescence in light wave coupled electrowetting devices

Open the PDF for in another window

High-efficiency surface-emitting channel drop filters in two-dimensional photonic crystal slabs

Bok-Ki Min; Jae-Eun Kim; Hae Yong Park

Appl. Phys. Lett. 86, 011106 (2005) https://doi.org/10.1063/1.1843275

Abstract

View articletitled, High-efficiency surface-emitting channel drop filters in two-dimensional photonic crystal slabs

Open the PDF for in another window

Magneto-optical nanoparticle-doped silica-titania planar waveguides

F. Royer; D. Jamon; J. J. Rousseau; H. Roux; D. Zins; V. Cabuil

Appl. Phys. Lett. 86, 011107 (2005) https://doi.org/10.1063/1.1844038

Abstract

View articletitled, Magneto-optical nanoparticle-doped silica-titania planar waveguides

Open the PDF for in another window

Fabrication and characterization of face-centered-cubic void dots photonic crystals in a solid polymer material

Guangyong Zhou; Michael James Ventura; Michael Ross Vanner; Min Gu

Appl. Phys. Lett. 86, 011108 (2005) https://doi.org/10.1063/1.1844039

Abstract

View articletitled, Fabrication and characterization of face-centered-cubic void dots photonic crystals in a solid polymer material

Open the PDF for in another window

Room-temperature 3.9–4.3 μm photoluminescence from InSb submonolayers grown by molecular beam epitaxy in an InAs matrix

V. A. Solov’ev; O. G. Lyublinskaya; A. N. Semenov; B. Ya. Meltser; D. D. Solnyshkov; Ya. V. Terent’ev; L. A. Prokopova; A. A. Toropov; S. V. Ivanov; P. S. Kop’ev

Appl. Phys. Lett. 86, 011109 (2005) https://doi.org/10.1063/1.1844042

Abstract

View articletitled, Room-temperature 3.9–4.3 μm photoluminescence from InSb submonolayers grown by molecular beam epitaxy in an InAs matrix

Open the PDF for in another window

Electrically switchable mesoscale Penrose quasicrystal structure

Suraj P. Gorkhali; Jun Qi; Gregory P. Crawford

Appl. Phys. Lett. 86, 011110 (2005) https://doi.org/10.1063/1.1844608

Abstract

View articletitled, Electrically switchable mesoscale Penrose quasicrystal structure

Open the PDF for in another window

Gain saturation in $In P ∕ Ga In P$ quantum-dot lasers

J. Lutti; P. M. Smowton; G. M. Lewis; P. Blood; A. B. Krysa; J. C. Lin; P. A. Houston; A. J. Ramsay; D. J. Mowbray

Appl. Phys. Lett. 86, 011111 (2005) https://doi.org/10.1063/1.1844600

Abstract

View articletitled, Gain saturation in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">In</mi><mi mathvariant="normal">P</mi><mo>∕</mo><mi mathvariant="normal">Ga</mi><mi mathvariant="normal">In</mi><mi mathvariant="normal">P</mi></mrow></math> quantum-dot lasers

Open the PDF for in another window

White organic light-emitting devices based on $4, 4^{'}$ -bis(⁠ $2, 2^{'}$ -diphenyl vinyl)- $1, 1^{'}$ -biphenyl and phosphorescence sensitized 5,6,11,12-tetraphenylnaphthacene

Yingfang Zhang; Gang Cheng; Yi Zhao; Jingying Hou; Shiyong Liu

Appl. Phys. Lett. 86, 011112 (2005) https://doi.org/10.1063/1.1845593

Abstract

View articletitled, White organic light-emitting devices based on <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>4</mn><mo>,</mo><msup><mn>4</mn><mo>′</mo></msup></mrow></math>-bis(⁠<math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>2</mn><mo>,</mo><msup><mn>2</mn><mo>′</mo></msup></mrow></math>-diphenyl vinyl)-<math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>1</mn><mo>,</mo><msup><mn>1</mn><mo>′</mo></msup></mrow></math>-biphenyl and phosphorescence sensitized 5,6,11,12-tetraphenylnaphthacene

Open the PDF for in another window

Effect of amplified spontaneous emission and absorber mirror recovery time on the dynamics of mode-locked fiber lasers

Robert Herda; Oleg G. Okhotnikov

Appl. Phys. Lett. 86, 011113 (2005) https://doi.org/10.1063/1.1845589

Abstract

View articletitled, Effect of amplified spontaneous emission and absorber mirror recovery time on the dynamics of mode-locked fiber lasers

Open the PDF for in another window

Blue-violet $InGaN$ laser diodes grown on bulk $GaN$ substrates by plasma-assisted molecular-beam epitaxy

C. Skierbiszewski; Z. R. Wasilewski; M. Siekacz; A. Feduniewicz; P. Perlin; P. Wisniewski; J. Borysiuk; I. Grzegory; M. Leszczynski; T. Suski; S. Porowski

Appl. Phys. Lett. 86, 011114 (2005) https://doi.org/10.1063/1.1846143

Abstract

View articletitled, Blue-violet <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">InGaN</mi></mrow></math> laser diodes grown on bulk <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">GaN</mi></mrow></math> substrates by plasma-assisted molecular-beam epitaxy

Open the PDF for in another window

Time-gated backscattered ballistic light imaging of objects in turbid water

Manuel E. Zevallos L.; S. K. Gayen; M. Alrubaiee; R. R. Alfano

Appl. Phys. Lett. 86, 011115 (2005) https://doi.org/10.1063/1.1846145

Abstract

View articletitled, Time-gated backscattered ballistic light imaging of objects in turbid water

Open the PDF for in another window

Doubly resonant photonic crystal for efficient laser operation: Pumping and lasing at low group velocity photonic modes

F. Raineri; G. Vecchi; A. M. Yacomotti; C. Seassal; P. Viktorovitch; R. Raj; A. Levenson

Appl. Phys. Lett. 86, 011116 (2005) https://doi.org/10.1063/1.1846148

Abstract

View articletitled, Doubly resonant photonic crystal for efficient laser operation: Pumping and lasing at low group velocity photonic modes

Open the PDF for in another window

$320 \times 256$ solar-blind focal plane arrays based on ${Al}_{x} {Ga}_{1 - x} N$

R. McClintock; K. Mayes; A. Yasan; D. Shiell; P. Kung; M. Razeghi

Appl. Phys. Lett. 86, 011117 (2005) https://doi.org/10.1063/1.1846936

Abstract

View articletitled, <math xmlns="http://www.w3.org/1998/Math/MathML"><mn xmlns="">320</mn><mo xmlns="">×</mo><mn xmlns="">256</mn></math> solar-blind focal plane arrays based on <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi>Al</mi><mi>x</mi></msub><msub xmlns=""><mi>Ga</mi><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub><mi mathvariant="normal" xmlns="">N</mi></math>

Open the PDF for in another window

Ultraviolet amplified spontaneous emission from self-organized network of zinc oxide nanofibers

C. X. Xu; X. W. Sun; Clement Yuen; B. J. Chen; S. F. Yu; Z. L. Dong

Appl. Phys. Lett. 86, 011118 (2005) https://doi.org/10.1063/1.1847716

Abstract

View articletitled, Ultraviolet amplified spontaneous emission from self-organized network of zinc oxide nanofibers

Open the PDF for in another window

PLASMAS AND ELECTRICAL DISCHARGES

Possibility of transmutation of ${}^{135}{Cs}$ by ultraintense laser

R. Takashima; S. Hasegawa; K. Nemoto; K. Kato

Appl. Phys. Lett. 86, 011501 (2005) https://doi.org/10.1063/1.1847715

Abstract

View articletitled, Possibility of transmutation of <math xmlns="http://www.w3.org/1998/Math/MathML"><mmultiscripts xmlns=""><mi>Cs</mi><mprescripts></mprescripts><mtext></mtext><mn>135</mn></mmultiscripts></math> by ultraintense laser

Open the PDF for in another window

Ultraviolet emission from argon water-vapor mixtures excited with low-energy electron beams

A. Morozov; R. Krücken; T. Ottenthal; A. Ulrich; J. Wieser

Appl. Phys. Lett. 86, 011502 (2005) https://doi.org/10.1063/1.1846155

Abstract

View articletitled, Ultraviolet emission from argon water-vapor mixtures excited with low-energy electron beams

Open the PDF for in another window

STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Vacancy concentrations in silicon determined by the indiffusion of iridium

L. Lerner; N. A. Stolwijk

Appl. Phys. Lett. 86, 011901 (2005) https://doi.org/10.1063/1.1844031

Abstract

View articletitled, Vacancy concentrations in silicon determined by the indiffusion of iridium

Open the PDF for in another window

Mutual promotion effect of crystal growth in $Ti N ∕ Si C$ nanomultilayers

Jijun Lao; Nan Shao; Fanghua Mei; Geyang Li; Mingyuan Gu

Appl. Phys. Lett. 86, 011902 (2005) https://doi.org/10.1063/1.1844045

Abstract

View articletitled, Mutual promotion effect of crystal growth in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Ti</mi><mi mathvariant="normal">N</mi><mo>∕</mo><mi mathvariant="normal">Si</mi><mi mathvariant="normal">C</mi></mrow></math> nanomultilayers

Open the PDF for in another window

Abnormal contact resistance reduction of bonded copper interconnects in three-dimensional integration during current stressing

K. N. Chen; C. S. Tan; A. Fan; R. Reif

Appl. Phys. Lett. 86, 011903 (2005) https://doi.org/10.1063/1.1844609

Abstract

View articletitled, Abnormal contact resistance reduction of bonded copper interconnects in three-dimensional integration during current stressing

Open the PDF for in another window

Generation of periodic microrelief in tensioned polymeric substrates with hard coating and their physical properties

Victor Belyaev; Victor Misnik; Sergei Trofimov; Alexander Volynsky; Victor Konovalov; Anatoly Muravskii

Appl. Phys. Lett. 86, 011904 (2005) https://doi.org/10.1063/1.1845595

Abstract

View articletitled, Generation of periodic microrelief in tensioned polymeric substrates with hard coating and their physical properties

Open the PDF for in another window

Large blueshift of the band gap of $Ga As Sb ∕ Al Sb$ quantum wells with ion implantation

Xiaolan Sun; Nasser Peyghambarian; Alan R. Kost; Nayer Eradat

Appl. Phys. Lett. 86, 011905 (2005) https://doi.org/10.1063/1.1845596

Abstract

View articletitled, Large blueshift of the band gap of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Ga</mi><mi mathvariant="normal">As</mi><mi mathvariant="normal">Sb</mi><mo>∕</mo><mi mathvariant="normal">Al</mi><mi mathvariant="normal">Sb</mi></mrow></math> quantum wells with ion implantation

Open the PDF for in another window

Terahertz emission from (100) InAs surfaces at high excitation fluences

M. Reid; R. Fedosejevs

Appl. Phys. Lett. 86, 011906 (2005) https://doi.org/10.1063/1.1842863

Abstract

View articletitled, Terahertz emission from (100) InAs surfaces at high excitation fluences

Open the PDF for in another window

Influence of band alignment on recombination in pseudomorphic ${Si}_{1 - x} {Ge}_{x} ∕ Si$ quantum wells

Y. Sugawara; Y. Kishimoto; Y. Akai; S. Fukatsu

Appl. Phys. Lett. 86, 011907 (2005) https://doi.org/10.1063/1.1844591

Abstract

View articletitled, Influence of band alignment on recombination in pseudomorphic <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>Si</mi><mrow><mn>1</mn><mo>−</mo><mi mathvariant="normal">x</mi></mrow></msub><msub><mi>Ge</mi><mi mathvariant="normal">x</mi></msub><mo>∕</mo><mi>Si</mi></mrow></math> quantum wells

Open the PDF for in another window

Large polar pretilt for the liquid crystal homologous series alkylcyanobiphenyl

Zhibin Huang; Charles Rosenblatt

Appl. Phys. Lett. 86, 011908 (2005) https://doi.org/10.1063/1.1844601

Abstract

View articletitled, Large polar pretilt for the liquid crystal homologous series alkylcyanobiphenyl

Open the PDF for in another window

Buckled $SiGe$ layers by the oxidation of $SiGe$ on viscous ${SiO}_{2}$ layers

C.-Y. Yu; P.-W. Chen; S.-R. Jan; M.-H. Liao; Kao-Feng Liao; C. W. Liu

Appl. Phys. Lett. 86, 011909 (2005) https://doi.org/10.1063/1.1846937

Abstract

View articletitled, Buckled <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mrow><mi mathvariant="normal">SiGe</mi></mrow></mrow></math> layers by the oxidation of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mrow><mi mathvariant="normal">SiGe</mi></mrow></mrow></math> on viscous <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mrow><msub><mrow><mi mathvariant="normal">SiO</mi></mrow><mn>2</mn></msub></mrow></mrow></math> layers

Open the PDF for in another window

Long-wavelength HgCdTe on silicon negative luminescent devices

M. K. Haigh; G. R. Nash; N. T. Gordon; J. Edwards; A. Graham; J. Giess; J. E. Hails; M. Houlton

Appl. Phys. Lett. 86, 011910 (2005) https://doi.org/10.1063/1.1843280

Abstract

View articletitled, Long-wavelength HgCdTe on silicon negative luminescent devices

Open the PDF for in another window

Nanometer-scale studies of point defect distributions in $GaMnAs$ alloys

J. N. Gleason; M. E. Hjelmstad; V. D. Dasika; R. S. Goldman; S. Fathpour; S. Charkrabarti; P. K. Bhattacharya

Appl. Phys. Lett. 86, 011911 (2005) https://doi.org/10.1063/1.1843284

Abstract

View articletitled, Nanometer-scale studies of point defect distributions in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">GaMnAs</mi></mrow></math> alloys

Open the PDF for in another window

Birefringent cadmium–telluride-based metamaterial

M. L. Markham; J. J. Baumberg; D. C. Smith; X. Li; T Gabriel; G. S. Attard; I. Nandhakumar

Appl. Phys. Lett. 86, 011912 (2005) https://doi.org/10.1063/1.1844035

Abstract

View articletitled, Birefringent cadmium–telluride-based metamaterial

Open the PDF for in another window

How does the nickel nanowire melt?

Li Hui; F. Pederiva; B. L. Wang; J. L. Wang; G. H. Wang

Appl. Phys. Lett. 86, 011913 (2005) https://doi.org/10.1063/1.1844046

Abstract

View articletitled, How does the nickel nanowire melt?

Open the PDF for in another window

Structural transformation and localization during simulated nanoindentation of a noncrystalline metal film

Yunfeng Shi; Michael L. Falk

Appl. Phys. Lett. 86, 011914 (2005) https://doi.org/10.1063/1.1844593

Abstract

View articletitled, Structural transformation and localization during simulated nanoindentation of a noncrystalline metal film

Supplementary Material

Open the PDF for in another window

Epitaxial liftoff of ZnSe-based heterostructures using a II-VI release layer

A. Balocchi; A. Curran; T. C. M. Graham; C. Bradford; K. A. Prior; R. J. Warburton

Appl. Phys. Lett. 86, 011915 (2005) https://doi.org/10.1063/1.1844595

Abstract

View articletitled, Epitaxial liftoff of ZnSe-based heterostructures using a II-VI release layer

Open the PDF for in another window

Direct observation of enhanced residual thermal energy coupling to solids in femtosecond laser ablation

A. Y. Vorobyev; Chunlei Guo

Appl. Phys. Lett. 86, 011916 (2005) https://doi.org/10.1063/1.1844598

Abstract

View articletitled, Direct observation of enhanced residual thermal energy coupling to solids in femtosecond laser ablation

Open the PDF for in another window

Mechanism for pinhole formation in $Ga N ∕ Al N ∕ Si (111)$ layers from steps at the substrate surface

A. M. Sanchez; G. P. Dimitrakopulos; P. Ruterana

Appl. Phys. Lett. 86, 011917 (2005) https://doi.org/10.1063/1.1845599

Abstract

View articletitled, Mechanism for pinhole formation in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Ga</mi><mi mathvariant="normal">N</mi><mo>∕</mo><mi mathvariant="normal">Al</mi><mi mathvariant="normal">N</mi><mo>∕</mo><mi mathvariant="normal">Si</mi><mrow><mo>(</mo><mn>111</mn><mo>)</mo></mrow></mrow></math> layers from steps at the substrate surface

Open the PDF for in another window

Influence of chemical short-range order on atomic diffusion in Al–Ni melts

S. K. Das; J. Horbach; M. M. Koza; S. Mavila Chatoth; A. Meyer

Appl. Phys. Lett. 86, 011918 (2005) https://doi.org/10.1063/1.1845590

Abstract

View articletitled, Influence of chemical short-range order on atomic diffusion in Al–Ni melts

Open the PDF for in another window

Effects of 1:1 B-cation order on Raman scattering in complex perovskites $A B^{'} {}_{0.5}B^{″} {}_{0.5}O_{3}$

Igor Levin; Sergey A. Prosandeev; James E. Maslar

Appl. Phys. Lett. 86, 011919 (2005) https://doi.org/10.1063/1.1845571

Abstract

View articletitled, Effects of 1:1 B-cation order on Raman scattering in complex perovskites <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">A</mi><msup><mi mathvariant="normal">B</mi><mo>′</mo></msup><mmultiscripts><mi mathvariant="normal">B</mi><mtext></mtext><mo>″</mo><mprescripts></mprescripts><mn>0.5</mn><mtext></mtext></mmultiscripts><mmultiscripts><mi mathvariant="normal">O</mi><mn>3</mn><mtext></mtext><mprescripts></mprescripts><mn>0.5</mn><mtext></mtext></mmultiscripts></mrow></math>

Open the PDF for in another window

A pump-power-controlled luminescent switcher

D. Jaque; J. García Solé; L. Macalik; J. Hanuza; A. Majchrowski

Appl. Phys. Lett. 86, 011920 (2005) https://doi.org/10.1063/1.1846151

Abstract

View articletitled, A pump-power-controlled luminescent switcher

Open the PDF for in another window

Polarity control of ZnO films grown on nitrided $c$ -sapphire by molecular-beam epitaxy

Xinqiang Wang; Yosuke Tomita; Ok-Hwan Roh; Masayuki Ohsugi; Song-Bek Che; Yoshihiro Ishitani; Akihiko Yoshikawa

Appl. Phys. Lett. 86, 011921 (2005) https://doi.org/10.1063/1.1846951

Abstract

View articletitled, Polarity control of ZnO films grown on nitrided <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">c</mi></math>-sapphire by molecular-beam epitaxy

Open the PDF for in another window

Effect of temperature and stress on plastic deformation in monocrystalline silicon induced by scratching

I. Zarudi; T. Nguyen; L. C. Zhang

Appl. Phys. Lett. 86, 011922 (2005) https://doi.org/10.1063/1.1847692

Abstract

View articletitled, Effect of temperature and stress on plastic deformation in monocrystalline silicon induced by scratching

Open the PDF for in another window

Adsorption effects of $N O_{2}$ at ppm level on visible photoluminescence response of $Sn O_{2}$ nanobelts

G. Faglia; C. Baratto; G. Sberveglieri; M. Zha; A. Zappettini

Appl. Phys. Lett. 86, 011923 (2005) https://doi.org/10.1063/1.1849832

Abstract

View articletitled, Adsorption effects of <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">N</mi><msub xmlns=""><mi mathvariant="normal">O</mi><mn>2</mn></msub></math> at ppm level on visible photoluminescence response of <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">Sn</mi><msub xmlns=""><mi mathvariant="normal">O</mi><mn>2</mn></msub></math> nanobelts

Open the PDF for in another window

In-plane optical anisotropy in ${In}_{x} {Ga}_{1 - x} N ∕ GaN$ multiple quantum wells induced by Pockels effect

H. J. Chang; C. H. Chen; L. Y. Huang; Y. F. Chen; T. Y. Lin

Appl. Phys. Lett. 86, 011924 (2005) https://doi.org/10.1063/1.1841477

Abstract

View articletitled, In-plane optical anisotropy in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mrow><msub><mrow><mi mathvariant="normal">In</mi></mrow><mi>x</mi></msub><msub><mrow><mi mathvariant="normal">Ga</mi></mrow><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub><mi mathvariant="normal">N</mi><mo>∕</mo><mi mathvariant="normal">GaN</mi></mrow></mrow></math> multiple quantum wells induced by Pockels effect

Open the PDF for in another window

ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Electron and hole moveable islands in pyroelectric/semiconductor granular systems

V. Yu. Kachorovskii; M. S. Shur

Appl. Phys. Lett. 86, 012101 (2005) https://doi.org/10.1063/1.1842865

Abstract

View articletitled, Electron and hole moveable islands in pyroelectric/semiconductor granular systems

Open the PDF for in another window

Electric-field-enhanced electron capture coefficient of EL2 level in semi-insulating GaAs

M. Kiyama; M. Tatsumi; M. Yamada

Appl. Phys. Lett. 86, 012102 (2005) https://doi.org/10.1063/1.1844040

Abstract

View articletitled, Electric-field-enhanced electron capture coefficient of EL2 level in semi-insulating GaAs

Open the PDF for in another window

Splitting of excitons and biexcitons in coupled InAs quantum dot molecules

Xiulai Xu; D. A. Williams; J. R. A. Cleaver

Appl. Phys. Lett. 86, 012103 (2005) https://doi.org/10.1063/1.1842861

Abstract

View articletitled, Splitting of excitons and biexcitons in coupled InAs quantum dot molecules

Open the PDF for in another window

Enhancement of hole injection using $O_{2}$ plasma-treated $Ag$ anode for top-emitting organic light-emitting diodes

Ho Won Choi; Soo Young Kim; Ki-Beom Kim; Yoon-Heung Tak; Jong-Lam Lee

Appl. Phys. Lett. 86, 012104 (2005) https://doi.org/10.1063/1.1846149

Abstract

View articletitled, Enhancement of hole injection using <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mrow><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></mrow></math> plasma-treated <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mrow><mi mathvariant="normal">Ag</mi></mrow></mrow></math> anode for top-emitting organic light-emitting diodes

Open the PDF for in another window

Minority carrier transport in $p$ -type ${Zn}_{0.9} {Mg}_{0.1} O$ doped with phosphorus

O. Lopatiuk; W. Burdett; L. Chernyak; K. P. Ip; Y. W. Heo; D. P. Norton; S. J. Pearton; B. Hertog; P. P. Chow; A. Osinsky

Appl. Phys. Lett. 86, 012105 (2005) https://doi.org/10.1063/1.1844037

Abstract

View articletitled, Minority carrier transport in <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">p</mi></math>-type <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>Zn</mi><mn>0.9</mn></msub><msub><mi>Mg</mi><mn>0.1</mn></msub><mi mathvariant="normal">O</mi></mrow></math> doped with phosphorus

Open the PDF for in another window

Thermal distributions of surface states causing the current collapse in unpassivated $AlGaN ∕ GaN$ heterostructure field-effect transistors

C. S. Oh; C. J. Youn; G. M. Yang; K. Y. Lim; J. W. Yang

Appl. Phys. Lett. 86, 012106 (2005) https://doi.org/10.1063/1.1844610

Abstract

View articletitled, Thermal distributions of surface states causing the current collapse in unpassivated <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>AlGaN</mi><mo>∕</mo><mi>GaN</mi></mrow></math> heterostructure field-effect transistors

Open the PDF for in another window

Hysteretic current–voltage characteristics and resistance switching at an epitaxial oxide Schottky junction $Sr Ru O_{3} ∕ Sr {Ti}_{0.99} {Nb}_{0.01} O_{3}$

T. Fujii; M. Kawasaki; A. Sawa; H. Akoh; Y. Kawazoe; Y. Tokura

Appl. Phys. Lett. 86, 012107 (2005) https://doi.org/10.1063/1.1845598

Abstract

View articletitled, Hysteretic current–voltage characteristics and resistance switching at an epitaxial oxide Schottky junction <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Sr</mi><mi mathvariant="normal">Ru</mi><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub><mo>∕</mo><mi mathvariant="normal">Sr</mi><msub><mi mathvariant="normal">Ti</mi><mn>0.99</mn></msub><msub><mi mathvariant="normal">Nb</mi><mn>0.01</mn></msub><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub></mrow></math>

Open the PDF for in another window

Chemical reactions at $Cu ∕ Zn S (001)$ and $In ∕ Zn S (001)$ heterojunctions: A comparison of photoelectron and $S L_{2, 3}$ x-ray emission spectroscopy

L. Zhang; D. Wett; D. Schulze; R. Szargan; M. Nagel; H. Peisert; T. Chassé

Appl. Phys. Lett. 86, 012108 (2005) https://doi.org/10.1063/1.1843287

Abstract

View articletitled, Chemical reactions at <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Cu</mi><mo>∕</mo><mi mathvariant="normal">Zn</mi><mi mathvariant="normal">S</mi><mrow><mo>(</mo><mn>001</mn><mo>)</mo></mrow></mrow></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">In</mi><mo>∕</mo><mi mathvariant="normal">Zn</mi><mi mathvariant="normal">S</mi><mrow><mo>(</mo><mn>001</mn><mo>)</mo></mrow></mrow></math> heterojunctions: A comparison of photoelectron and <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">S</mi><mspace width="0.2em"></mspace><msub><mi>L</mi><mrow><mn>2</mn><mo>,</mo><mn>3</mn></mrow></msub></mrow></math> x-ray emission spectroscopy

Open the PDF for in another window

High mobility in ZnO thin films deposited on perovskite substrates with a low temperature nucleation layer

E. Bellingeri; D. Marré; I. Pallecchi; L. Pellegrino; A. S. Siri

Appl. Phys. Lett. 86, 012109 (2005) https://doi.org/10.1063/1.1844034

Abstract

View articletitled, High mobility in ZnO thin films deposited on perovskite substrates with a low temperature nucleation layer

Open the PDF for in another window

Single-crystal organic field-effect transistors based on dibenzo-tetrathiafulvalene

M. Mas-Torrent; P. Hadley; S. T. Bromley; N. Crivillers; J. Veciana; C. Rovira

Appl. Phys. Lett. 86, 012110 (2005) https://doi.org/10.1063/1.1848179

Abstract

View articletitled, Single-crystal organic field-effect transistors based on dibenzo-tetrathiafulvalene

Open the PDF for in another window

MAGNETISM AND SUPERCONDUCTIVITY

Zeeman splitting in ferromagnetic Schottky barrier contacts based on doped EuS

Cong Ren; Jelena Trbovic; Peng Xiong; Stephan von Molnár

Appl. Phys. Lett. 86, 012501 (2005) https://doi.org/10.1063/1.1842857

Abstract

View articletitled, Zeeman splitting in ferromagnetic Schottky barrier contacts based on doped EuS

Open the PDF for in another window

Phase separation in ${La}_{5 ∕ 8} {Sr}_{3 ∕ 8} Mn O_{3} (30 %) + Lu Mn O_{3} (70 %)$ bulk sample studied by scanning microwave microscopy

Jino Lee; Jewook Park; Ahram Kim; K. Char; Soonyong Park; Namjung Hur; S.-W. Cheong

Appl. Phys. Lett. 86, 012502 (2005) https://doi.org/10.1063/1.1842859

Abstract

View articletitled, Phase separation in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">La</mi><mrow><mn>5</mn><mo>∕</mo><mn>8</mn></mrow></msub><msub><mi mathvariant="normal">Sr</mi><mrow><mn>3</mn><mo>∕</mo><mn>8</mn></mrow></msub><mi mathvariant="normal">Mn</mi><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub><mspace width="0.3em"></mspace><mrow><mo>(</mo><mn>30</mn><mo>%</mo><mo>)</mo></mrow><mo>+</mo><mi mathvariant="normal">Lu</mi><mi mathvariant="normal">Mn</mi><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub><mspace width="0.3em"></mspace><mrow><mo>(</mo><mn>70</mn><mo>%</mo><mo>)</mo></mrow></mrow></math> bulk sample studied by scanning microwave microscopy

Open the PDF for in another window

Integration of epitaxial colossal magnetoresistive films onto Si(100) using $Sr Ti O_{3}$ as a template layer

A. K. Pradhan; S. Mohanty; Kai Zhang; J. B. Dadson; E. M. Jackson; D. Hunter; R. R. Rakhimov; G. B. Loutts; Jun Zhang; D. J. Sellmyer

Appl. Phys. Lett. 86, 012503 (2005) https://doi.org/10.1063/1.1842852

Abstract

View articletitled, Integration of epitaxial colossal magnetoresistive films onto Si(100) using <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Sr</mi><mi mathvariant="normal">Ti</mi><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub></mrow></math> as a template layer

Open the PDF for in another window

The role of Cr substitution on the ferromagnetic properties of ${Ga}_{1 - x} {Cr}_{x} N$

R. K. Singh; Stephen Y. Wu; H. X. Liu; Lin Gu; David J. Smith; N. Newman

Appl. Phys. Lett. 86, 012504 (2005) https://doi.org/10.1063/1.1843276

Abstract

View articletitled, The role of Cr substitution on the ferromagnetic properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">Ga</mi><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub><msub><mi mathvariant="normal">Cr</mi><mi>x</mi></msub><mi mathvariant="normal">N</mi></mrow></math>

Open the PDF for in another window

Ab initio prediction of a multiferroic with large polarization and magnetization

Pio Baettig; Nicola A. Spaldin

Appl. Phys. Lett. 86, 012505 (2005) https://doi.org/10.1063/1.1843290

Abstract

View articletitled, Ab initio prediction of a multiferroic with large polarization and magnetization

Open the PDF for in another window

Probing two-dimensional magnetic switching in $Co ∕ Si O_{2}$ multilayers using reversible susceptibility experiments

L. Spinu; H. Pham; C. Radu; J. C. Denardin; I. Dumitru; M. Knobel; L. S. Dorneles; L. F. Schelp; A. Stancu

Appl. Phys. Lett. 86, 012506 (2005) https://doi.org/10.1063/1.1842851

Abstract

View articletitled, Probing two-dimensional magnetic switching in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Co</mi><mo>∕</mo><mi mathvariant="normal">Si</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></math> multilayers using reversible susceptibility experiments

Open the PDF for in another window

Superconductivity controlled by polarization in field-effect devices of confined geometry

Natalia Pavlenko; Franz Schwabl

Appl. Phys. Lett. 86, 012507 (2005) https://doi.org/10.1063/1.1844597

Abstract

View articletitled, Superconductivity controlled by polarization in field-effect devices of confined geometry

Open the PDF for in another window

Effect of damage by $2 MeV$ He ions on the normal and superconducting properties of magnesium diboride

R. Gandikota; R. K. Singh; J. Kim; B. Wilkens; N. Newman; J. M. Rowell; A. V. Pogrebnyakov; X. X. Xi; J. M. Redwing; S. Y. Xu; Q. Li

Appl. Phys. Lett. 86, 012508 (2005) https://doi.org/10.1063/1.1845591

Abstract

View articletitled, Effect of damage by <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>2</mn><mspace width="0.3em"></mspace><mi>MeV</mi></mrow></math> He ions on the normal and superconducting properties of magnesium diboride

Open the PDF for in another window

Crystalline $γ - {Al}_{2} O_{3}$ barrier for magnetite-based magnetic tunnel junctions

A. M. Bataille; J.-B. Moussy; F. Paumier; S. Gota; M.-J. Guittet; M. Gautier-Soyer; P. Warin; P. Bayle-Guillemaud; P. Seneor; K. Bouzehouane; F. Petroff

Appl. Phys. Lett. 86, 012509 (2005) https://doi.org/10.1063/1.1846144

Abstract

View articletitled, Crystalline <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mrow><mi>γ</mi><mtext>-</mtext><msub><mrow><mi mathvariant="normal">Al</mi></mrow><mn>2</mn></msub><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub></mrow></mrow></math> barrier for magnetite-based magnetic tunnel junctions

Open the PDF for in another window

Measurements of $1 ∕ f$ noise in Josephson junctions at zero voltage: Implications for decoherence in superconducting quantum bits

Michael Mück; Matthias Korn; C. G. A. Mugford; J. B. Kycia; John Clarke

Appl. Phys. Lett. 86, 012510 (2005) https://doi.org/10.1063/1.1846157

Abstract

View articletitled, Measurements of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>1</mn><mo>∕</mo><mi>f</mi></mrow></math> noise in Josephson junctions at zero voltage: Implications for decoherence in superconducting quantum bits

Open the PDF for in another window

Effect of Joule heating in current-driven domain wall motion

A. Yamaguchi; S. Nasu; H. Tanigawa; T. Ono; K. Miyake; K. Mibu; T. Shinjo

Appl. Phys. Lett. 86, 012511 (2005) https://doi.org/10.1063/1.1847714

Abstract

View articletitled, Effect of Joule heating in current-driven domain wall motion

Open the PDF for in another window

DIELECTRICS AND FERROELECTRICITY

Effects of tantalum penetration through hafnium oxide layer on carrier generation rate in silicon substrate and carrier mobility degradation

Chang Yong Kang; Se Jong Rhee; Chang Hwan Choi; M. S. Akvar; Manhong Zhang; Taekhwi Lee; Injo Ok; Jack C. Lee

Appl. Phys. Lett. 86, 012901 (2005) https://doi.org/10.1063/1.1845588

Abstract

View articletitled, Effects of tantalum penetration through hafnium oxide layer on carrier generation rate in silicon substrate and carrier mobility degradation

Open the PDF for in another window

Microscopic aspects of the region-by-region polarization reversal kinetics of polycrystalline ferroelectric $Pb (Zr, Ti) O_{3}$ films

Igor Stolichnov; Lisa Malin; Enrico Colla; Alexander K. Tagantsev; Nava Setter

Appl. Phys. Lett. 86, 012902 (2005) https://doi.org/10.1063/1.1845573

Abstract

View articletitled, Microscopic aspects of the region-by-region polarization reversal kinetics of polycrystalline ferroelectric <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Pb</mi><mrow><mo>(</mo><mi mathvariant="normal">Zr</mi><mo>,</mo><mi mathvariant="normal">Ti</mi><mo>)</mo></mrow><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub></mrow></math> films

Open the PDF for in another window

Ferroelectricity and local currents in epitaxial 5- and $9 - nm$ -thick $Pb (Zr, Ti) O_{3}$ ultrathin films by scanning probe microscopy

Hironori Fujisawa; Masaru Shimizu; Hirohiko Niu; Hajime Nonomura; Koichiro Honda

Appl. Phys. Lett. 86, 012903 (2005) https://doi.org/10.1063/1.1843288

Abstract

View articletitled, Ferroelectricity and local currents in epitaxial 5- and <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>9</mn><mtext>-</mtext><mi>nm</mi></mrow></math>-thick <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Pb</mi><mrow><mo>(</mo><mi mathvariant="normal">Zr</mi><mo>,</mo><mi mathvariant="normal">Ti</mi><mo>)</mo></mrow><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub></mrow></math> ultrathin films by scanning probe microscopy

Open the PDF for in another window

Fermi level pinning and Hf–Si bonds at ${HfO}_{2}$ ⁠: Polycrystalline silicon gate electrode interfaces

K. Xiong; P. W. Peacock; J. Robertson

Appl. Phys. Lett. 86, 012904 (2005) https://doi.org/10.1063/1.1844611

Abstract

View articletitled, Fermi level pinning and Hf–Si bonds at <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>HfO</mi><mn>2</mn></msub></mrow></math>⁠: Polycrystalline silicon gate electrode interfaces

Open the PDF for in another window

Ultrahigh piezoelectric response perpendicular to special cleavage plane in $Ba Ti O_{3}$ single crystals

R. Chu; Z. Xu; G. Li; H. Zeng; H. Yu; H. Luo; Q. Yin

Appl. Phys. Lett. 86, 012905 (2005) https://doi.org/10.1063/1.1844043

Abstract

View articletitled, Ultrahigh piezoelectric response perpendicular to special cleavage plane in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Ba</mi><mi mathvariant="normal">Ti</mi><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub></mrow></math> single crystals

Open the PDF for in another window

Domain growth kinetics in lithium niobate single crystals studied by piezoresponse force microscopy

B. J. Rodriguez; R. J. Nemanich; A. Kingon; A. Gruverman; S. V. Kalinin; K. Terabe; X. Y. Liu; K. Kitamura

Appl. Phys. Lett. 86, 012906 (2005) https://doi.org/10.1063/1.1845594

Abstract

View articletitled, Domain growth kinetics in lithium niobate single crystals studied by piezoresponse force microscopy

Open the PDF for in another window

Enhanced spontaneous polarization in superlattice-structured ${Bi}_{4} {Ti}_{3} O_{12} – Ba {Bi}_{4} {Ti}_{4} O_{15}$ single crystals

Tomo Kobayashi; Yuji Noguchi; Masaru Miyayama

Appl. Phys. Lett. 86, 012907 (2005) https://doi.org/10.1063/1.1847693

Abstract

View articletitled, Enhanced spontaneous polarization in superlattice-structured <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>Bi</mi><mn>4</mn></msub><msub><mi>Ti</mi><mn>3</mn></msub><msub><mi mathvariant="normal">O</mi><mn>12</mn></msub><mtext>–</mtext><mi>Ba</mi><msub><mi>Bi</mi><mn>4</mn></msub><msub><mi>Ti</mi><mn>4</mn></msub><msub><mi mathvariant="normal">O</mi><mn>15</mn></msub></mrow></math> single crystals

Open the PDF for in another window

Observation of a low-temperature acoustic anomaly in lanthanum lead zirconate titanate

Ghulam Shabbir; Jae-Hyeon Ko; Seiji Kojima

Appl. Phys. Lett. 86, 012908 (2005) https://doi.org/10.1063/1.1847710

Abstract

View articletitled, Observation of a low-temperature acoustic anomaly in lanthanum lead zirconate titanate

Open the PDF for in another window

Ferroelectric domain engineering using atomic force microscopy tip arrays in the domain breakdown regime

Y. Rosenwaks; D. Dahan; M. Molotskii; G. Rosenman

Appl. Phys. Lett. 86, 012909 (2005) https://doi.org/10.1063/1.1847711

Abstract

View articletitled, Ferroelectric domain engineering using atomic force microscopy tip arrays in the domain breakdown regime

Open the PDF for in another window

Evolution of bias field and offset piezoelectric coefficient in bulk lead zirconate titanate with fatigue

Yong Zhang; Ivan S. Baturin; Emil Aulbach; Doru C. Lupascu; Andrei L. Kholkin; Vladimir Ya. Shur; Jürgen Rödel

Appl. Phys. Lett. 86, 012910 (2005) https://doi.org/10.1063/1.1847712

Abstract

View articletitled, Evolution of bias field and offset piezoelectric coefficient in bulk lead zirconate titanate with fatigue

Open the PDF for in another window

NANOSCALE SCIENCE AND DESIGN

Study of the internal structure of individual CdSe quantum rods using electron nanodiffraction

Zhiheng Yu; Megan A. Hahn; Joaquin Calcines; Todd D. Krauss; John Silcox

Appl. Phys. Lett. 86, 013101 (2005) https://doi.org/10.1063/1.1843278

Abstract

View articletitled, Study of the internal structure of individual CdSe quantum rods using electron nanodiffraction

Open the PDF for in another window

High-transmission solid-immersion apertured optical probes for near-field scanning optical microscopy

A. Dechant; S. K. Dew; S. E. Irvine; A. Y. Elezzabi

Appl. Phys. Lett. 86, 013102 (2005) https://doi.org/10.1063/1.1842864

Abstract

View articletitled, High-transmission solid-immersion apertured optical probes for near-field scanning optical microscopy

Open the PDF for in another window

Sb-induced bicrystal ZnO nanobelts

Kai Zou; Xiao-Ying Qi; Xiao-Feng Duan; Shao-Min Zhou; Xiao-Hong Zhang

Appl. Phys. Lett. 86, 013103 (2005) https://doi.org/10.1063/1.1844041

Abstract

View articletitled, Sb-induced bicrystal ZnO nanobelts

Open the PDF for in another window

Surface morphology control of strained $InAs ∕ GaAs (331) A$ films: From nanowires to island-pit pairs

Z. Gong; Z. C. Niu; Z. D. Fang; Z. H. Miao; S. L. Feng

Appl. Phys. Lett. 86, 013104 (2005) https://doi.org/10.1063/1.1846146

Abstract

View articletitled, Surface morphology control of strained <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">InAs</mi><mo>∕</mo><mi mathvariant="normal">GaAs</mi><mrow><mo>(</mo><mrow><mn>331</mn></mrow><mo>)</mo></mrow><mi mathvariant="normal">A</mi></mrow></math> films: From nanowires to island-pit pairs

Open the PDF for in another window

Catalytic growth of group III-nitride nanowires and nanostructures by metalorganic chemical vapor deposition

J. Su; G. Cui; M. Gherasimova; H. Tsukamoto; J. Han; D. Ciuparu; S. Lim; L. Pfefferle; Y. He; A. V. Nurmikko; C. Broadbridge; A. Lehman

Appl. Phys. Lett. 86, 013105 (2005) https://doi.org/10.1063/1.1843281

Abstract

View articletitled, Catalytic growth of group III-nitride nanowires and nanostructures by metalorganic chemical vapor deposition

Open the PDF for in another window

Diffraction effects in optical interferometric displacement detection in nanoelectromechanical systems

T. Kouh; D. Karabacak; D. H. Kim; K. L. Ekinci

Appl. Phys. Lett. 86, 013106 (2005) https://doi.org/10.1063/1.1843289

Abstract

View articletitled, Diffraction effects in optical interferometric displacement detection in nanoelectromechanical systems

Open the PDF for in another window

Self-assembly of $Ni$ nanocrystals on ${HfO}_{2}$ and $N$ -assisted $Ni$ confinement for nonvolatile memory application

Zerlinda Tan; S. K. Samanta; Won Jong Yoo; Sungjoo Lee

Appl. Phys. Lett. 86, 013107 (2005) https://doi.org/10.1063/1.1846952

Abstract

View articletitled, Self-assembly of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Ni</mi></mrow></math> nanocrystals on <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mi mathvariant="normal">HfO</mi></mrow><mn>2</mn></msub></mrow></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">N</mi></mrow></math>-assisted <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Ni</mi></mrow></math> confinement for nonvolatile memory application

Open the PDF for in another window

Formation of SiC-surface nanocrystals by ion implantation and electron beam rapid thermal annealing

A. Markwitz; S. Johnson; M. Rudolphi; H. Baumann; A. Mücklich

Appl. Phys. Lett. 86, 013108 (2005) https://doi.org/10.1063/1.1846953

Abstract

View articletitled, Formation of SiC-surface nanocrystals by ion implantation and electron beam rapid thermal annealing

Open the PDF for in another window

Thermal stimulation of aqueous volumes contained in carbon nanotubes: Experiment and modeling

Alexander L. Yarin; Almila G. Yazicioglu; Constantine M. Megaridis

Appl. Phys. Lett. 86, 013109 (2005) https://doi.org/10.1063/1.1844602

Abstract

View articletitled, Thermal stimulation of aqueous volumes contained in carbon nanotubes: Experiment and modeling

Open the PDF for in another window

Self-organized Ge nanocrystals embedded in HfAlO fabricated by pulsed-laser deposition and application to floating gate memory

W. L. Liu; P. F. Lee; J. Y. Dai; J. Wang; H. L. W. Chan; C. L. Choy; Z. T. Song; S. L. Feng

Appl. Phys. Lett. 86, 013110 (2005) https://doi.org/10.1063/1.1846154

Abstract

View articletitled, Self-organized Ge nanocrystals embedded in HfAlO fabricated by pulsed-laser deposition and application to floating gate memory

Open the PDF for in another window

Self-attraction among aligned Au/ZnO nanorods under electron beam

Xudong Wang; Christopher J. Summers; Zhong Lin Wang

Appl. Phys. Lett. 86, 013111 (2005) https://doi.org/10.1063/1.1847713

Abstract

View articletitled, Self-attraction among aligned Au/ZnO nanorods under electron beam

Open the PDF for in another window

DEVICE PHYSICS

Visualization using scanning nonlinear dielectric microscopy of electrons and holes localized in the thin gate film of a metal– ${SiO}_{2} - {Si}_{3} N_{4} - {SiO}_{2}$ –semiconductor flash memory

Koichiro Honda; Yasuo Cho

Appl. Phys. Lett. 86, 013501 (2005) https://doi.org/10.1063/1.1846147

Abstract

View articletitled, Visualization using scanning nonlinear dielectric microscopy of electrons and holes localized in the thin gate film of a metal–<math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mi mathvariant="normal">SiO</mi></mrow><mn>2</mn></msub><mo>–</mo><msub><mrow><mi mathvariant="normal">Si</mi></mrow><mn>3</mn></msub><msub><mi mathvariant="normal">N</mi><mn>4</mn></msub><mo>–</mo><msub><mrow><mi mathvariant="normal">SiO</mi></mrow><mn>2</mn></msub></mrow></math>–semiconductor flash memory

Open the PDF for in another window

Reconfigurable magnetologic computing using the spin flop switching of a magnetic random access memory cell

A. Ney; J. S. Harris, Jr.

Appl. Phys. Lett. 86, 013502 (2005) https://doi.org/10.1063/1.1842858

Abstract

View articletitled, Reconfigurable magnetologic computing using the spin flop switching of a magnetic random access memory cell

Open the PDF for in another window

High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer

H. Q. Chiang; J. F. Wager; R. L. Hoffman; J. Jeong; D. A. Keszler

Appl. Phys. Lett. 86, 013503 (2005) https://doi.org/10.1063/1.1843286

Abstract

View articletitled, High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer

Open the PDF for in another window

Efficiency improvement in solid-state-dye-sensitized photovoltaics with an amphiphilic Ruthenium-dye

Lukas Schmidt-Mende; Shaik M. Zakeeruddin; Michael Grätzel

Appl. Phys. Lett. 86, 013504 (2005) https://doi.org/10.1063/1.1844032

Abstract

View articletitled, Efficiency improvement in solid-state-dye-sensitized photovoltaics with an amphiphilic Ruthenium-dye

Open the PDF for in another window

Application of ${NaYF}_{4} : {Er}^{3 +}$ up-converting phosphors for enhanced near-infrared silicon solar cell response

A. Shalav; B. S. Richards; T. Trupke; K. W. Krämer; H. U. Güdel

Appl. Phys. Lett. 86, 013505 (2005) https://doi.org/10.1063/1.1844592

Abstract

View articletitled, Application of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>NaYF</mi><mn>4</mn></msub><mo>:</mo><msup><mi>Er</mi><mrow><mn>3</mn><mo>+</mo></mrow></msup></mrow></math> up-converting phosphors for enhanced near-infrared silicon solar cell response

Open the PDF for in another window

A microelectromechanical load sensor for in situ electron and x-ray microscopy tensile testing of nanostructures

Yong Zhu; N. Moldovan; Horacio D. Espinosa

Appl. Phys. Lett. 86, 013506 (2005) https://doi.org/10.1063/1.1844594

Abstract

View articletitled, A microelectromechanical load sensor for in situ electron and x-ray microscopy tensile testing of nanostructures

Open the PDF for in another window

An inkjet-printed chemical fuse

M. F. Mabrook; C. Pearson; M. C. Petty

Appl. Phys. Lett. 86, 013507 (2005) https://doi.org/10.1063/1.1846950

Abstract

View articletitled, An inkjet-printed chemical fuse

Open the PDF for in another window

Potential-well-roughness-induced transition from resonant tunneling to single-electron tunneling in $Si ∕ Si O_{2}$ double-barrier structure

Yasuhiko Ishikawa; Hiroya Ikeda; Michiharu Tabe

Appl. Phys. Lett. 86, 013508 (2005) https://doi.org/10.1063/1.1848185

Abstract

View articletitled, Potential-well-roughness-induced transition from resonant tunneling to single-electron tunneling in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Si</mi><mo>∕</mo><mi mathvariant="normal">Si</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></math> double-barrier structure

Open the PDF for in another window

INTERDISCIPLINARY AND GENERAL PHYSICS

Atomic force microscopy with time resolution of microseconds

M. Anwar; I. Rousso

Appl. Phys. Lett. 86, 014101 (2005) https://doi.org/10.1063/1.1843277

Abstract

View articletitled, Atomic force microscopy with time resolution of microseconds

Supplementary Material

Open the PDF for in another window

X-ray high-resolution diffraction using refractive lenses

Michael Drakopoulos; Anatoly Snigirev; Irina Snigireva; Jörg Schilling

Appl. Phys. Lett. 86, 014102 (2005) https://doi.org/10.1063/1.1843282

Abstract

View articletitled, X-ray high-resolution diffraction using refractive lenses

Open the PDF for in another window

Convenient optical pressure gauge for multimegabar pressures calibrated to $300 GPa$

Liling Sun; Arthur L. Ruoff; Gary Stupian

Appl. Phys. Lett. 86, 014103 (2005) https://doi.org/10.1063/1.1840117

Abstract

View articletitled, Convenient optical pressure gauge for multimegabar pressures calibrated to <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>300</mn><mspace width="0.3em"></mspace><mi>GPa</mi></mrow></math>

Open the PDF for in another window

Noncontact measurement of high-temperature surface tension and viscosity of bulk metallic glass-forming alloys using the drop oscillation technique

S. Mukherjee; W. L. Johnson; W. K. Rhim

Appl. Phys. Lett. 86, 014104 (2005) https://doi.org/10.1063/1.1844596

Abstract

View articletitled, Noncontact measurement of high-temperature surface tension and viscosity of bulk metallic glass-forming alloys using the drop oscillation technique

Open the PDF for in another window

Theoretical investigation of scaling effects from macro-to-microscale convection due to variations in incompressible fluid properties

Shripad P. Mahulikar; Heinz Herwig

Appl. Phys. Lett. 86, 014105 (2005) https://doi.org/10.1063/1.1845597

Abstract

View articletitled, Theoretical investigation of scaling effects from macro-to-microscale convection due to variations in incompressible fluid properties

Open the PDF for in another window

Low-dissipation capillary switches at small scales

Amir H. Hirsa; Carlos A. López; Michael A. Laytin; Michael J. Vogel; Paul H. Steen

Appl. Phys. Lett. 86, 014106 (2005) https://doi.org/10.1063/1.1845572

Abstract

View articletitled, Low-dissipation capillary switches at small scales

Open the PDF for in another window

Crystal sensor for microscopy applications

Zhiqiang Peng; Paul West

Appl. Phys. Lett. 86, 014107 (2005) https://doi.org/10.1063/1.1846156

Abstract

View articletitled, Crystal sensor for microscopy applications

Open the PDF for in another window

COMMENTS

Comment on “Carrier trapping and current collapse mechanism in GaN metal–semiconductor field-effect transistors” [Appl. Phys. Lett. 84, 1970 (2004)]

C. S. Oh; C. J. Youn; G. M. Yang; K. Y. Lim; J. W. Yang

Appl. Phys. Lett. 86, 016101 (2005) https://doi.org/10.1063/1.1844603

Extract

View articletitled, Comment on “Carrier trapping and current collapse mechanism in GaN metal–semiconductor field-effect transistors” [Appl. Phys. Lett. 84, 1970 (2004)]

Open the PDF for in another window

Response to “Comment on ‘Carrier trapping and current collapse mechanism in GaN metal-semiconductor field effect transistors’ ” [Appl. Phys. Lett. 86, 016101 (2005)]

A. F. M. Anwar; Syed S. Islam; Richard T. Webster

Appl. Phys. Lett. 86, 016102 (2005) https://doi.org/10.1063/1.1844604

Extract

View articletitled, Response to “Comment on ‘Carrier trapping and current collapse mechanism in GaN metal-semiconductor field effect transistors’ ” [Appl. Phys. Lett. 86, 016101 (2005)]

Open the PDF for in another window

Issues

LASERS, OPTICS, AND OPTOELECTRONICS

PLASMAS AND ELECTRICAL DISCHARGES

STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

ELECTRONIC TRANSPORT AND SEMICONDUCTORS

MAGNETISM AND SUPERCONDUCTIVITY

DIELECTRICS AND FERROELECTRICITY

NANOSCALE SCIENCE AND DESIGN

DEVICE PHYSICS

INTERDISCIPLINARY AND GENERAL PHYSICS

COMMENTS

RSS

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

This Feature Is Available To Subscribers Only