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LASERS, OPTICS, AND OPTOELECTRONICS

Two-dimensional metallo-dielectric photonic crystals embedded in anodic porous alumina for optical wavelengths

Osamu Takayama; Michael Cada

Appl. Phys. Lett. 85, 1311–1313 (2004) https://doi.org/10.1063/1.1784047

Abstract

View articletitled, Two-dimensional metallo-dielectric photonic crystals embedded in anodic porous alumina for optical wavelengths

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Microreflectivity characterization of the two-dimensional refractive index distribution of electron-beam-written optical waveguides in germanium-doped flame-hydrolysis silica

S. García Blanco; J. S. Aitchison; C. Hnatovsky; R. S. Taylor

Appl. Phys. Lett. 85, 1314–1316 (2004) https://doi.org/10.1063/1.1784541

Abstract

View articletitled, Microreflectivity characterization of the two-dimensional refractive index distribution of electron-beam-written optical waveguides in germanium-doped flame-hydrolysis silica

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Infrared surface plasmons in two-dimensional silver nanoparticle arrays in silicon

H. Mertens; J. Verhoeven; A. Polman; F. D. Tichelaar

Appl. Phys. Lett. 85, 1317–1319 (2004) https://doi.org/10.1063/1.1784542

Abstract

View articletitled, Infrared surface plasmons in two-dimensional silver nanoparticle arrays in silicon

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Measurement of positive gain on the $1315 nm$ transition of atomic iodine pumped by $O_{2} (a^{1} Δ)$ produced in an electric discharge

D. L. Carroll; J. T. Verdeyen; D. M. King; J. W. Zimmerman; J. K. Laystrom; B. S. Woodard; N. Richardson; K. Kittell; Mark J. Kushner; W. C. Solomon

Appl. Phys. Lett. 85, 1320–1322 (2004) https://doi.org/10.1063/1.1784519

Abstract

View articletitled, Measurement of positive gain on the <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>1315</mn><mspace width="0.3em"></mspace><mi mathvariant="normal">nm</mi></mrow></math> transition of atomic iodine pumped by <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub><mrow><mo>(</mo><mrow><msup><mi>a</mi><mn>1</mn></msup><mi>Δ</mi></mrow><mo>)</mo></mrow></mrow></math> produced in an electric discharge

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Improvement on the photorefractive performance of a monolithic molecular material by introducing electron traps

Jie Zhang; Zhijian Chen; Yihong Liu; Maomao Huang; Qun Wei; Qihuang Gong

Appl. Phys. Lett. 85, 1323–1325 (2004) https://doi.org/10.1063/1.1784522

Abstract

View articletitled, Improvement on the photorefractive performance of a monolithic molecular material by introducing electron traps

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Lasing characteristics of InAs quantum-dot microdisk from $3 K$ to room temperature

Toshihide Ide; Toshihiko Baba; Jun Tatebayashi; Satoshi Iwamoto; Toshihiro Nakaoka; Yasuhiko Arakawa

Appl. Phys. Lett. 85, 1326–1328 (2004) https://doi.org/10.1063/1.1787157

Abstract

View articletitled, Lasing characteristics of InAs quantum-dot microdisk from <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>3</mn><mspace width="0.3em"></mspace><mi mathvariant="normal">K</mi></mrow></math> to room temperature

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Formation of dynamic holograms based on spatial modulation of molecular motions of ferroelectric liquid crystals

Takeo Sasaki; Oki Mochizuki; Yukihito Nakazawa; Godai Fukunaga; Tetsuya Nakamura; Kazunori Noborio

Appl. Phys. Lett. 85, 1329–1331 (2004) https://doi.org/10.1063/1.1785283

Abstract

View articletitled, Formation of dynamic holograms based on spatial modulation of molecular motions of ferroelectric liquid crystals

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Mechanical model for the generation of acoustic chaos in sonic infrared imaging

Xiaoyan Han; V. Loggins; Zhi Zeng; L. D. Favro; R. L. Thomas

Appl. Phys. Lett. 85, 1332–1334 (2004) https://doi.org/10.1063/1.1785285

Abstract

View articletitled, Mechanical model for the generation of acoustic chaos in sonic infrared imaging

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On the origin of strain fluctuation in strained- $Si$ grown on $SiGe$ -on-insulator and $SiGe$ virtual substrates

Kentaro Kutsukake; Noritaka Usami; Toru Ujihara; Kozo Fujiwara; Gen Sazaki; Kazuo Nakajima

Appl. Phys. Lett. 85, 1335–1337 (2004) https://doi.org/10.1063/1.1784036

Abstract

View articletitled, On the origin of strain fluctuation in strained-<math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Si</mi></mrow></math> grown on <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">SiGe</mi></mrow></math>-on-insulator and <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">SiGe</mi></mrow></math> virtual substrates

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Near-field polarimetric characterization of polymer crystallites

Lori S. Goldner; Scott N. Goldie; Michael J. Fasolka; Francoise Renaldo; Jeeseong Hwang; Jack F. Douglas

Appl. Phys. Lett. 85, 1338–1340 (2004) https://doi.org/10.1063/1.1785866

Abstract

View articletitled, Near-field polarimetric characterization of polymer crystallites

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Cathodoluminescence versus dynamical epitaxy of $Ba$ -ion irradiated $α$ -quartz

S. Dhar; S. Gąsiorek; P. K. Sahoo; U. Vetter; H. Hofsäß; V. N. Kulkarni; K. P. Lieb

Appl. Phys. Lett. 85, 1341–1343 (2004) https://doi.org/10.1063/1.1784538

Abstract

View articletitled, Cathodoluminescence versus dynamical epitaxy of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Ba</mi></mrow></math>-ion irradiated <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>α</mi></mrow></math>-quartz

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Thick and adherent cubic boron nitride films grown on diamond interlayers by fluorine-assisted chemical vapor deposition

W. J. Zhang; I. Bello; Y. Lifshitz; K. M. Chan; Y. Wu; C. Y. Chan; X. M. Meng; S. T. Lee

Appl. Phys. Lett. 85, 1344–1346 (2004) https://doi.org/10.1063/1.1784545

Abstract

View articletitled, Thick and adherent cubic boron nitride films grown on diamond interlayers by fluorine-assisted chemical vapor deposition

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Proton-beam-induced defect levels in ${CuInSe}_{2}$ thin-film absorbers: An investigation on nonradiative electron transitions

Yoji Akaki; Kenji Yoshino; Tetsuo Ikari; Shirou Kawakita; Mitsuru Imaizumi; Shigeru Niki; Keiichiro Sakurai; Shogo Ishizuka; Takeshi Ohshima

Appl. Phys. Lett. 85, 1347–1349 (2004) https://doi.org/10.1063/1.1784518

Abstract

View articletitled, Proton-beam-induced defect levels in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mi mathvariant="normal">CuInSe</mi></mrow><mn>2</mn></msub></mrow></math> thin-film absorbers: An investigation on nonradiative electron transitions

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Cathodoluminescence study of deep ultraviolet quantum wells grown on maskless laterally epitaxial overgrown $AlGaN$

T. M. Katona; M. D. Craven; J. S. Speck; S. P. DenBaars

Appl. Phys. Lett. 85, 1350–1352 (2004) https://doi.org/10.1063/1.1777417

Abstract

View articletitled, Cathodoluminescence study of deep ultraviolet quantum wells grown on maskless laterally epitaxial overgrown <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">AlGaN</mi></mrow></math>

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Recrystallization texture, epitaxy, and magnetic properties of electrodeposited FePt on Cu(001)

Erik B. Svedberg; Jonathan J. Mallett; Safak Sayan; Alexander J. Shapiro; William F. Egelhoff, Jr.; Thomas Moffat

Appl. Phys. Lett. 85, 1353–1355 (2004) https://doi.org/10.1063/1.1784525

Abstract

View articletitled, Recrystallization texture, epitaxy, and magnetic properties of electrodeposited FePt on Cu(001)

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Spatial correlation-anticorrelation in strain-driven self-assembled InGaAs quantum dots

X.-D. Wang; N. Liu; C. K. Shih; S. Govindaraju; A. L. Holmes, Jr.

Appl. Phys. Lett. 85, 1356–1358 (2004) https://doi.org/10.1063/1.1784526

Abstract

View articletitled, Spatial correlation-anticorrelation in strain-driven self-assembled InGaAs quantum dots

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Measurement of phosphorus segregation in silicon at the atomic scale using scanning tunneling microscopy

L. Oberbeck; N. J. Curson; T. Hallam; M. Y. Simmons; G. Bilger; R. G. Clark

Appl. Phys. Lett. 85, 1359–1361 (2004) https://doi.org/10.1063/1.1784881

Abstract

View articletitled, Measurement of phosphorus segregation in silicon at the atomic scale using scanning tunneling microscopy

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Incipient plasticity during nanoindentation at elevated temperatures

Alan C. Lund; Andrea M. Hodge; Christopher A. Schuh

Appl. Phys. Lett. 85, 1362–1364 (2004) https://doi.org/10.1063/1.1784891

Abstract

View articletitled, Incipient plasticity during nanoindentation at elevated temperatures

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Electron accumulation layer at the Cs-covered GaN(0001) $n$ -type surface

G. V. Benemanskaya; V. S. Vikhnin; N. M. Shmidt; G. E. Frank-Kamenetskaya; I. V. Afanasiev

Appl. Phys. Lett. 85, 1365–1367 (2004) https://doi.org/10.1063/1.1785284

Abstract

View articletitled, Electron accumulation layer at the Cs-covered GaN(0001) <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">n</mi></math>-type surface

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Surface cleaning and annealing effects on $Ni ∕ Al Ga N$ interface atomic composition and Schottky barrier height

S. T. Bradley; S. H. Goss; J. Hwang; W. J. Schaff; L. J. Brillson

Appl. Phys. Lett. 85, 1368–1370 (2004) https://doi.org/10.1063/1.1785287

Abstract

View articletitled, Surface cleaning and annealing effects on <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Ni</mi><mo>∕</mo><mi mathvariant="normal">Al</mi><mi mathvariant="normal">Ga</mi><mi mathvariant="normal">N</mi></mrow></math> interface atomic composition and Schottky barrier height

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Carrier relaxation in $InGaN ∕ GaN$ quantum wells with nanometer-scale cluster structures

Hsiang-Chen Wang; Shih-Chun Lin; Yen-Chen Lu; Yung-Chen Cheng; C. C. Yang; Kung-Jen Ma

Appl. Phys. Lett. 85, 1371–1373 (2004) https://doi.org/10.1063/1.1784033

Abstract

View articletitled, Carrier relaxation in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">InGaN</mi><mo>∕</mo><mi mathvariant="normal">GaN</mi></mrow></math> quantum wells with nanometer-scale cluster structures

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Band-gap modified Al-doped ${Zn}_{1 - x} {Mg}_{x} O$ transparent conducting films deposited by pulsed laser deposition

K. Matsubara; H. Tampo; H. Shibata; A. Yamada; P. Fons; K. Iwata; S. Niki

Appl. Phys. Lett. 85, 1374–1376 (2004) https://doi.org/10.1063/1.1784544

Abstract

View articletitled, Band-gap modified Al-doped <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">Zn</mi><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub><msub><mi mathvariant="normal">Mg</mi><mi>x</mi></msub><mi mathvariant="normal">O</mi></mrow></math> transparent conducting films deposited by pulsed laser deposition

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Influence of intensive light exposure on polymer field-effect transistors

J. Ficker; H. von Seggern; H. Rost; W. Fix; W. Clemens; I. McCulloch

Appl. Phys. Lett. 85, 1377–1379 (2004) https://doi.org/10.1063/1.1784547

Abstract

View articletitled, Influence of intensive light exposure on polymer field-effect transistors

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Impact ionization coefficients of $4 H$ silicon carbide

T. Hatakeyama; T. Watanabe; T. Shinohe; K. Kojima; K. Arai; N. Sano

Appl. Phys. Lett. 85, 1380–1382 (2004) https://doi.org/10.1063/1.1784520

Abstract

View articletitled, Impact ionization coefficients of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>4</mn><mi mathvariant="normal">H</mi></mrow></math> silicon carbide

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MAGNETISM AND SUPERCONDUCTIVITY

Distribution of activation energies on undoped and SiC-doped superconducting $Mg B_{2}$ wires

E. Martínez; R. Navarro

Appl. Phys. Lett. 85, 1383–1385 (2004) https://doi.org/10.1063/1.1781359

Abstract

View articletitled, Distribution of activation energies on undoped and SiC-doped superconducting <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Mg</mi><msub><mi mathvariant="normal">B</mi><mn>2</mn></msub></mrow></math> wires

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Heat-assisted magnetization switching in elongated submicrometer Permalloy structures

D. Atkinson; R. P. Cowburn

Appl. Phys. Lett. 85, 1386–1388 (2004) https://doi.org/10.1063/1.1784523

Abstract

View articletitled, Heat-assisted magnetization switching in elongated submicrometer Permalloy structures

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High-performance magnetic field sensor based on superconducting quantum interference filters

P. Caputo; J. Oppenländer; Ch. Häussler; J. Tomes; A. Friesch; T. Träuble; N. Schopohl

Appl. Phys. Lett. 85, 1389–1391 (2004) https://doi.org/10.1063/1.1787165

Abstract

View articletitled, High-performance magnetic field sensor based on superconducting quantum interference filters

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NANOSCALE SCIENCE AND DESIGN

Nanogranular ${Fe}_{x} {Ni}_{23 - x} B_{6}$ phase formation during devitrificationof nickel-rich ${Ni}_{64} {Fe}_{16} {Zr}_{7} B_{12} {Au}_{1}$ amorphous alloy

B. Idzikowski; A. Szajek; J.-M. Greneche; J. Kovač

Appl. Phys. Lett. 85, 1392–1394 (2004) https://doi.org/10.1063/1.1773929

Abstract

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Above-room-temperature ferromagnetic ${Ni}^{2 +}$ -doped $ZnO$ thin films prepared from colloidal diluted magnetic semiconductor quantum dots

Dana A. Schwartz; Kevin R. Kittilstved; Daniel R. Gamelin

Appl. Phys. Lett. 85, 1395–1397 (2004) https://doi.org/10.1063/1.1785872

Abstract

View articletitled, Above-room-temperature ferromagnetic <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msup><mrow><mi mathvariant="normal">Ni</mi></mrow><mrow><mn>2</mn><mo>+</mo></mrow></msup></mrow></math>-doped <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">ZnO</mi></mrow></math> thin films prepared from colloidal diluted magnetic semiconductor quantum dots

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Direct measurement of proton-beam-written polymer optical waveguide sidewall morphorlogy using an atomic force microscope

T. C. Sum; A. A. Bettiol; H. L. Seng; J. A. van Kan; F. Watt

Appl. Phys. Lett. 85, 1398–1400 (2004) https://doi.org/10.1063/1.1784035

Abstract

View articletitled, Direct measurement of proton-beam-written polymer optical waveguide sidewall morphorlogy using an atomic force microscope

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Vertical nanowire transistors with low leakage current

J. Chen; S. Klaumünzer; M. C. Lux-Steiner; R. Könenkamp

Appl. Phys. Lett. 85, 1401–1403 (2004) https://doi.org/10.1063/1.1784037

Abstract

View articletitled, Vertical nanowire transistors with low leakage current

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$InAs ∕ InP$ quantum dots emitting in the $1.55 μ m$ wavelength region by inserting submonolayer $GaP$ interlayers

Q. Gong; R. Nötzel; P. J. van Veldhoven; T. J. Eijkemans; J. H. Wolter

Appl. Phys. Lett. 85, 1404–1406 (2004) https://doi.org/10.1063/1.1785859

Abstract

View articletitled, <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">InAs</mi><mo>∕</mo><mi mathvariant="normal">InP</mi></mrow></math> quantum dots emitting in the <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>1.55</mn><mspace width="0.3em"></mspace><mi>μ</mi><mi mathvariant="normal">m</mi></mrow></math> wavelength region by inserting submonolayer <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">GaP</mi></mrow></math> interlayers

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Field emission of zinc oxide nanowires grown on carbon cloth

S. H. Jo; D. Banerjee; Z. F. Ren

Appl. Phys. Lett. 85, 1407–1409 (2004) https://doi.org/10.1063/1.1784543

Abstract

View articletitled, Field emission of zinc oxide nanowires grown on carbon cloth

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Switchable reflectivity on silicon from a composite ${VO}_{2} - {SiO}_{2}$ protecting layer

R. Lopez; L. A. Boatner; T. E. Haynes; R. F. Haglund, Jr.; L. C. Feldman

Appl. Phys. Lett. 85, 1410–1412 (2004) https://doi.org/10.1063/1.1784546

Abstract

View articletitled, Switchable reflectivity on silicon from a composite <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mi mathvariant="normal">VO</mi></mrow><mn>2</mn></msub><mtext>-</mtext><msub><mrow><mi mathvariant="normal">SiO</mi></mrow><mn>2</mn></msub></mrow></math> protecting layer

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Influence of pressure and ion bombardment on the growth and properties of nanocrystalline silicon materials

Vikram L. Dalal; Joshua Graves; Jeffrey Leib

Appl. Phys. Lett. 85, 1413–1414 (2004) https://doi.org/10.1063/1.1784550

Abstract

View articletitled, Influence of pressure and ion bombardment on the growth and properties of nanocrystalline silicon materials

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Field emission from $a Ca$ nanotip grown on $a Mo ⟨ 110 ⟩$ microtip

Xin Zhao; R. A. Outlaw; R. L. Champion; J. J. Wang; D. M. Manos; B. C. Holloway

Appl. Phys. Lett. 85, 1415–1417 (2004) https://doi.org/10.1063/1.1784515

Abstract

View articletitled, Field emission from <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">a</mi><mspace width="0.3em"></mspace><mi mathvariant="normal">Ca</mi></mrow></math> nanotip grown on <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">a</mi><mspace width="0.3em"></mspace><mi mathvariant="normal">Mo</mi><mrow><mo>⟨</mo><mrow><mn>110</mn></mrow><mo>⟩</mo></mrow></mrow></math> microtip

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Second- and third- harmonic generation in single-walled carbon nanotubes at nanosecond time scale

L. De Dominicis; S. Botti; L. S. Asilyan; R. Ciardi; R. Fantoni; M. L. Terranova; A. Fiori; S. Orlanducci; R. Appolloni

Appl. Phys. Lett. 85, 1418–1420 (2004) https://doi.org/10.1063/1.1782255

Abstract

View articletitled, Second- and third- harmonic generation in single-walled carbon nanotubes at nanosecond time scale

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Surfactant effect of gallium during the growth of GaN on $Al N (000 \bar{1})$ by plasma-assisted molecular beam epitaxy

N. Gogneau; E. Sarigiannidou; E. Monroy; S. Monnoye; H. Mank; B. Daudin

Appl. Phys. Lett. 85, 1421–1423 (2004) https://doi.org/10.1063/1.1782264

Abstract

View articletitled, Surfactant effect of gallium during the growth of GaN on <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Al</mi><mi mathvariant="normal">N</mi><mrow><mo>(</mo><mn>000</mn><mover accent="true"><mn>1</mn><mo stretchy="false">¯</mo></mover><mo>)</mo></mrow></mrow></math> by plasma-assisted molecular beam epitaxy

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Size control of $In As ∕ In P (001)$ quantum wires by tailoring $P ∕ As$ exchange

David Fuster; María Ujué González; Luisa González; Yolanda González; Teresa Ben; Arturo Ponce; Sergio I. Molina; Juan Martínez-Pastor

Appl. Phys. Lett. 85, 1424–1426 (2004) https://doi.org/10.1063/1.1787155

Abstract

View articletitled, Size control of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">In</mi><mi mathvariant="normal">As</mi><mo>∕</mo><mi mathvariant="normal">In</mi><mi mathvariant="normal">P</mi><mrow><mo>(</mo><mn>001</mn><mo>)</mo></mrow></mrow></math> quantum wires by tailoring <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">P</mi><mo>∕</mo><mi mathvariant="normal">As</mi></mrow></math> exchange

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Carbon nanotube alignment by surface acoustic waves

C. J. Strobl; C. Schäflein; U. Beierlein; J. Ebbecke; A. Wixforth

Appl. Phys. Lett. 85, 1427–1429 (2004) https://doi.org/10.1063/1.1787159

Abstract

View articletitled, Carbon nanotube alignment by surface acoustic waves

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DEVICE PHYSICS

Effect of $GaN$ cap layer grown at a low temperature on electrical characteristics of ${Al}_{0.25} {Ga}_{0.75} N ∕ GaN$ heterojunction field-effect transistors

C. J. Kao; J. K. Sheu; W. C. Lai; M. L. Lee; M. C. Chen; G. C. Chi

Appl. Phys. Lett. 85, 1430–1432 (2004) https://doi.org/10.1063/1.1784038

Abstract

View articletitled, Effect of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">GaN</mi></mrow></math> cap layer grown at a low temperature on electrical characteristics of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mi mathvariant="normal">Al</mi></mrow><mrow><mn>0.25</mn></mrow></msub><msub><mrow><mi mathvariant="normal">Ga</mi></mrow><mrow><mn>0.75</mn></mrow></msub><mi mathvariant="normal">N</mi><mo>∕</mo><mi mathvariant="normal">GaN</mi></mrow></math> heterojunction field-effect transistors

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Reexamination of some spintronic field-effect device concepts

S. Bandyopadhyay; M. Cahay

Appl. Phys. Lett. 85, 1433–1435 (2004) https://doi.org/10.1063/1.1784042

Abstract

View articletitled, Reexamination of some spintronic field-effect device concepts

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Ultraviolet light-emitting diodes operating in the $340 nm$ wavelength range and application to time-resolved fluorescence spectroscopy

H. Peng; E. Makarona; Y. He; Y.-K. Song; A. V. Nurmikko; J. Su; Z. Ren; M. Gherasimova; S.-R. Jeon; G. Cui; J. Han

Appl. Phys. Lett. 85, 1436–1438 (2004) https://doi.org/10.1063/1.1784537

Abstract

View articletitled, Ultraviolet light-emitting diodes operating in the <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>340</mn><mspace width="0.3em"></mspace><mi mathvariant="normal">nm</mi></mrow></math> wavelength range and application to time-resolved fluorescence spectroscopy

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Influence of buffer layer thickness on memory effects of ${SrBi}_{2} {Ta}_{2} O_{9} ∕ SiN ∕ Si$ structures

Jin-Ping Han; Sang-Mo Koo; Curt A. Richter; Eric M. Vogel

Appl. Phys. Lett. 85, 1439–1441 (2004) https://doi.org/10.1063/1.1771458

Abstract

View articletitled, Influence of buffer layer thickness on memory effects of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mi mathvariant="normal">SrBi</mi></mrow><mn>2</mn></msub><msub><mrow><mi mathvariant="normal">Ta</mi></mrow><mn>2</mn></msub><msub><mi mathvariant="normal">O</mi><mn>9</mn></msub><mo>∕</mo><mi mathvariant="normal">SiN</mi><mo>∕</mo><mi mathvariant="normal">Si</mi></mrow></math> structures

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Publisher’s Note: “Interfacial interactions at $Au ∕ {Si}_{3} N_{4} ∕ Si (111)$ and $Ni ∕ {Si}_{3} N_{4} ∕ Si (111)$ structures with ultrathin nitride films” [Appl. Phys. Lett. 84, 5031 (2004)]

L. Aballe; L. Gregoratti; A. Barinov; M. Kiskinova; T. Clausen; S. Gangopadhyay; J. Falta

Appl. Phys. Lett. 85, 1442 (2004) https://doi.org/10.1063/1.1785787

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Issues

LASERS, OPTICS, AND OPTOELECTRONICS

STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

ELECTRONIC TRANSPORT AND SEMICONDUCTORS

MAGNETISM AND SUPERCONDUCTIVITY

NANOSCALE SCIENCE AND DESIGN

DEVICE PHYSICS

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