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LASERS, OPTICS, AND OPTOELECTRONICS

Effects of annealing temperature on electrical resistance of bonded $n ‐ Ga As$ wafers

Po Chun Liu; Cheng Lun Lu; YewChung Sermon Wu; Ji-Hao Cheng; Hao Ouyang

Appl. Phys. Lett. 85, 4831–4833 (2004) https://doi.org/10.1063/1.1823592

Abstract

View articletitled, Effects of annealing temperature on electrical resistance of bonded <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>n</mi><mtext>‐</mtext><mi mathvariant="normal">Ga</mi><mi mathvariant="normal">As</mi></mrow></math> wafers

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Finite-width waveguide and waveguide intersections for self-collimated beams in photonic crystals

Zhaofeng Li; Haibo Chen; Zhitang Song; Fuhua Yang; Songlin Feng

Appl. Phys. Lett. 85, 4834–4836 (2004) https://doi.org/10.1063/1.1828577

Abstract

View articletitled, Finite-width waveguide and waveguide intersections for self-collimated beams in photonic crystals

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Phase locking in a fiber laser array with varying path lengths

Liping Liu; Yi Zhou; Fanting Kong; Y. C. Chen; Kotik K. Lee

Appl. Phys. Lett. 85, 4837–4839 (2004) https://doi.org/10.1063/1.1826235

Abstract

View articletitled, Phase locking in a fiber laser array with varying path lengths

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Self-pulsation and optical injection locking for multielectrode distributed feedback lasers using phase-shift-induced modes

Satoshi Nishikawa; Mitsunobu Gotoda; Tetsuya Nishimura; Yasunori Tokuda

Appl. Phys. Lett. 85, 4840–4841 (2004) https://doi.org/10.1063/1.1828228

Abstract

View articletitled, Self-pulsation and optical injection locking for multielectrode distributed feedback lasers using phase-shift-induced modes

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Mask pattern transferred transient grating technique for molecular-dynamics study in solutions

Koichi Okamoto; Zhaoyu Zhang; Axel Scherer; David T. Wei

Appl. Phys. Lett. 85, 4842–4844 (2004) https://doi.org/10.1063/1.1828591

Abstract

View articletitled, Mask pattern transferred transient grating technique for molecular-dynamics study in solutions

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Mechanically tunable photonic crystal structure

Wounjhang Park; Jeong-Bong Lee

Appl. Phys. Lett. 85, 4845–4847 (2004) https://doi.org/10.1063/1.1823019

Abstract

View articletitled, Mechanically tunable photonic crystal structure

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Dramatic effects of hole transport layer on the efficiency of iridium-based organic light-emitting diodes

Ying Wang

Appl. Phys. Lett. 85, 4848–4850 (2004) https://doi.org/10.1063/1.1823031

Abstract

View articletitled, Dramatic effects of hole transport layer on the efficiency of iridium-based organic light-emitting diodes

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$1.3 μ m$ $InGaAs$ vertical-cavity surface-emitting lasers with mode filter for single mode operation

R. Marcks von Würtemberg; P. Sundgren; J. Berggren; M. Hammar; M. Ghisoni; E. Ödling; V. Oscarsson; J. Malmquist

Appl. Phys. Lett. 85, 4851–4853 (2004) https://doi.org/10.1063/1.1823012

Abstract

View articletitled, <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mrow><mn>1.3</mn><mspace width="0.3em"></mspace><mi>μ</mi><mi mathvariant="normal">m</mi></mrow></mrow></math> <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mrow><mi mathvariant="normal">InGaAs</mi></mrow></mrow></math> vertical-cavity surface-emitting lasers with mode filter for single mode operation

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Nanocavity in a silicon waveguide for ultrasensitive nanoparticle detection

Bradley Schmidt; Vilson Almeida; Christina Manolatou; Stefan Preble; Michal Lipson

Appl. Phys. Lett. 85, 4854–4856 (2004) https://doi.org/10.1063/1.1819997

Abstract

View articletitled, Nanocavity in a silicon waveguide for ultrasensitive nanoparticle detection

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Electrical tunable Fabry–Perot interferometer using a poly(vinylidene fluoride-trifluoroethylene-chlorofluoroethylene) terpolymer

Dae-Yong Jeong; Yong-Hong Ye; Q. M. Zhang

Appl. Phys. Lett. 85, 4857–4859 (2004) https://doi.org/10.1063/1.1826225

Abstract

View articletitled, Electrical tunable Fabry–Perot interferometer using a poly(vinylidene fluoride-trifluoroethylene-chlorofluoroethylene) terpolymer

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Bragg gratings in silicon-on-insulator waveguides by focused ion beam milling

D. J. Moss; V. G. Ta’eed; B. J. Eggleton; D. Freeman; S. Madden; M. Samoc; B. Luther-Davies; S. Janz; D.-X. Xu

Appl. Phys. Lett. 85, 4860–4862 (2004) https://doi.org/10.1063/1.1824182

Abstract

View articletitled, Bragg gratings in silicon-on-insulator waveguides by focused ion beam milling

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Supercontinuum growth in a highly nonlinear fiber with a low-coherence semiconductor laser diode

A. K. Abeeluck; C. Headley

Appl. Phys. Lett. 85, 4863–4865 (2004) https://doi.org/10.1063/1.1818332

Abstract

View articletitled, Supercontinuum growth in a highly nonlinear fiber with a low-coherence semiconductor laser diode

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Zero dispersion at small group velocities in photonic crystal waveguides

A. Yu. Petrov; M. Eich

Appl. Phys. Lett. 85, 4866–4868 (2004) https://doi.org/10.1063/1.1815066

Abstract

View articletitled, Zero dispersion at small group velocities in photonic crystal waveguides

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PLASMAS AND ELECTRICAL DISCHARGES

Microdischarge devices with 10 or $30 μ m$ square silicon cathode cavities: $p d$ scaling and production of the $XeO$ excimer

S.-J. Park; J. G. Eden; J. Chen; C. Liu

Appl. Phys. Lett. 85, 4869–4871 (2004) https://doi.org/10.1063/1.1825061

Abstract

View articletitled, Microdischarge devices with 10 or <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mrow><mn>30</mn><mspace width="0.3em"></mspace><mi>μ</mi><mi mathvariant="normal">m</mi></mrow></mrow></math> square silicon cathode cavities: <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mrow><mi>p</mi><mi>d</mi></mrow></mrow></math> scaling and production of the <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mrow><mi mathvariant="normal">XeO</mi></mrow></mrow></math> excimer

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Low energy electron cooling induced by a magnetic field in high pressure capacitive radio frequency discharges

S. J. You; S. S. Kim; H. Y. Chang

Appl. Phys. Lett. 85, 4872–4874 (2004) https://doi.org/10.1063/1.1805704

Abstract

View articletitled, Low energy electron cooling induced by a magnetic field in high pressure capacitive radio frequency discharges

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Production of high-density capacitively coupled radio-frequency discharge plasma by high-secondary-electron-emission oxide

Yasunori Ohtsu; Hiroharu Fujita

Appl. Phys. Lett. 85, 4875–4877 (2004) https://doi.org/10.1063/1.1827353

Abstract

View articletitled, Production of high-density capacitively coupled radio-frequency discharge plasma by high-secondary-electron-emission oxide

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Observation of a manganese acceptor level in ferromagnetic ${Ga}_{1 - x} {Mn}_{x} N$ layers

I. T. Yoon; T. W. Kang; M. C. Jeong; M. H. Ham; J. M. Myoung

Appl. Phys. Lett. 85, 4878–4880 (2004) https://doi.org/10.1063/1.1825635

Abstract

View articletitled, Observation of a manganese acceptor level in ferromagnetic <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">Ga</mi><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub><msub><mi mathvariant="normal">Mn</mi><mi>x</mi></msub><mi mathvariant="normal">N</mi></mrow></math> layers

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Atomic diffusion in liquid Ni, NiP, PdNiP, and PdNiCuP alloys

S. Mavila Chathoth; A. Meyer; M. M. Koza; F. Juranyi

Appl. Phys. Lett. 85, 4881–4883 (2004) https://doi.org/10.1063/1.1825617

Abstract

View articletitled, Atomic diffusion in liquid Ni, NiP, PdNiP, and PdNiCuP alloys

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Hydrogen sorption mechanism of oxidized nickel clusters

A. Borgschulte; R. J. Westerwaal; J. H. Rector; B. Dam; R. Griessen

Appl. Phys. Lett. 85, 4884–4886 (2004) https://doi.org/10.1063/1.1828592

Abstract

View articletitled, Hydrogen sorption mechanism of oxidized nickel clusters

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Hydrogen adsorption in mesoporous carbons

Jiebin Pang; J. Eric Hampsey; Zhiwang Wu; Qingyuan Hu; Yunfeng Lu

Appl. Phys. Lett. 85, 4887–4889 (2004) https://doi.org/10.1063/1.1827338

Abstract

View articletitled, Hydrogen adsorption in mesoporous carbons

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Effect of growth temperature on morphology, structure and luminescence of Eu-doped GaN thin films

Q. L. Liu; Y. Bando; F. F. Xu; C. C. Tang

Appl. Phys. Lett. 85, 4890–4892 (2004) https://doi.org/10.1063/1.1825619

Abstract

View articletitled, Effect of growth temperature on morphology, structure and luminescence of Eu-doped GaN thin films

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Hydrogen-induced metallization of a preoxidized $3 C - SiC (100) 3 \times 2$ surface

M. G. Silly; C. Radtke; H. Enriquez; P. Soukiassian; S. Gardonio; P. Moras; P. Perfetti

Appl. Phys. Lett. 85, 4893–4895 (2004) https://doi.org/10.1063/1.1827938

Abstract

View articletitled, Hydrogen-induced metallization of a preoxidized <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mrow><mn>3</mn><mi mathvariant="normal">C</mi><mtext>-</mtext><mi mathvariant="normal">SiC</mi><mrow><mo>(</mo><mrow><mn>100</mn></mrow><mo>)</mo></mrow><mn>3</mn><mo>×</mo><mn>2</mn></mrow></mrow></math> surface

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Passivation of organic light-emitting diodes with aluminum oxide thin films grown by plasma-enhanced atomic layer deposition

Sun Jin Yun; Young-Wook Ko; Jung Wook Lim

Appl. Phys. Lett. 85, 4896–4898 (2004) https://doi.org/10.1063/1.1826238

Abstract

View articletitled, Passivation of organic light-emitting diodes with aluminum oxide thin films grown by plasma-enhanced atomic layer deposition

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Lattice location and thermal stability of implanted Fe in ZnO

E. Rita; U. Wahl; J. G. Correia; E. Alves; J. C. Soares; The ISOLDE Collaboration

Appl. Phys. Lett. 85, 4899–4901 (2004) https://doi.org/10.1063/1.1825611

Abstract

View articletitled, Lattice location and thermal stability of implanted Fe in ZnO

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Anomalous energetics and defect-assisted diffusion of Ga in silicon

Claudio Melis; Giorgia M. Lopez; Vincenzo Fiorentini

Appl. Phys. Lett. 85, 4902–4904 (2004) https://doi.org/10.1063/1.1826230

Abstract

View articletitled, Anomalous energetics and defect-assisted diffusion of Ga in silicon

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Determination of the carrier concentration in $InGaAsN ∕ GaAs$ single quantum wells using Raman scattering

Patrick A. Grandt; Aureus E. Griffith; M. O. Manasreh; D. J. Friedman; S. Doğan; D. Johnstone

Appl. Phys. Lett. 85, 4905–4907 (2004) https://doi.org/10.1063/1.1823014

Abstract

View articletitled, Determination of the carrier concentration in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mrow><mi mathvariant="normal">InGaAsN</mi><mo>∕</mo><mi mathvariant="normal">GaAs</mi></mrow></mrow></math> single quantum wells using Raman scattering

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Determination of composition and strain field of a III∕V quaternary quantum dot system

R. Otto; H. Kirmse; I. Häusler; W. Neumann; A. Rosenauer; D. Bimberg; L. Müller-Kirsch

Appl. Phys. Lett. 85, 4908–4910 (2004) https://doi.org/10.1063/1.1823602

Abstract

View articletitled, Determination of composition and strain field of a III∕V quaternary quantum dot system

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Superhigh strength and good soft-magnetic properties of $(Fe, Co) - B - Si - Nb$ bulk glassy alloys with high glass-forming ability

Baolong Shen; Akihisa Inoue; Chuntao Chang

Appl. Phys. Lett. 85, 4911–4913 (2004) https://doi.org/10.1063/1.1827349

Abstract

View articletitled, Superhigh strength and good soft-magnetic properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mrow><mrow><mo>(</mo><mrow><mi mathvariant="normal">Fe</mi><mo>,</mo><mi mathvariant="normal">Co</mi></mrow><mo>)</mo></mrow><mo>–</mo><mi mathvariant="normal">B</mi><mo>–</mo><mi mathvariant="normal">Si</mi><mo>–</mo><mi mathvariant="normal">Nb</mi></mrow></mrow></math> bulk glassy alloys with high glass-forming ability

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Metastable phase formation during $α_{2} (D_{19})$ to $γ (L 1_{})$ transformation in as-atomized $γ - TiAl$ alloy powders

M. Karadge; P. I. Gouma

Appl. Phys. Lett. 85, 4914–4916 (2004) https://doi.org/10.1063/1.1825065

Abstract

View articletitled, Metastable phase formation during <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>α</mi><mn>2</mn></msub><mi mathvariant="normal">(</mi><mi>D</mi><msub><mn></mn><mrow><mn>19</mn></mrow></msub><mi mathvariant="normal">)</mi></mrow></math> to <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>γ</mi><mi mathvariant="normal">(</mi><mi>L</mi><msub><mn>1</mn><mn></mn></msub><mi mathvariant="normal">)</mi></mrow></math> transformation in as-atomized <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>γ</mi><mtext>-</mtext><mi mathvariant="normal">TiAl</mi></mrow></math> alloy powders

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Electrostatic field-induced surface instability

Danxu Du; David Srolovitz

Appl. Phys. Lett. 85, 4917–4919 (2004) https://doi.org/10.1063/1.1826233

Abstract

View articletitled, Electrostatic field-induced surface instability

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Control of the growth orientation and electrical properties of polycrystalline ${Cu}_{2} O$ thin films by group-IV elements doping

Shogo Ishizuka; Katsuhiro Akimoto

Appl. Phys. Lett. 85, 4920–4922 (2004) https://doi.org/10.1063/1.1827352

Abstract

View articletitled, Control of the growth orientation and electrical properties of polycrystalline <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi>Cu</mi><mn>2</mn></msub><mi mathvariant="normal" xmlns="">O</mi></math> thin films by group-IV elements doping

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The generation of misfit dislocations in facet-controlled growth of $AlGaN ∕ GaN$ films

D. Cherns; S.-L. Sahonta; R. Liu; F. A. Ponce; H. Amano; I. Akasaki

Appl. Phys. Lett. 85, 4923–4925 (2004) https://doi.org/10.1063/1.1825051

Abstract

View articletitled, The generation of misfit dislocations in facet-controlled growth of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">AlGaN</mi><mo>∕</mo><mi mathvariant="normal">GaN</mi></mrow></math> films

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Structure of pentacene thin films

Ricardo Ruiz; Alex C. Mayer; George G. Malliaras; Bert Nickel; Giacinto Scoles; Alexander Kazimirov; Hyunjung Kim; Randall L. Headrick; Zahirul Islam

Appl. Phys. Lett. 85, 4926–4928 (2004) https://doi.org/10.1063/1.1826229

Abstract

View articletitled, Structure of pentacene thin films

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Structural properties and bandgap bowing of ${ZnO}_{1 - x} S_{x}$ thin films deposited by reactive sputtering

B. K. Meyer; A. Polity; B. Farangis; Y. He; D. Hasselkamp; Th. Krämer; C. Wang

Appl. Phys. Lett. 85, 4929–4931 (2004) https://doi.org/10.1063/1.1825053

Abstract

View articletitled, Structural properties and bandgap bowing of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mrow><msub><mrow><mi mathvariant="normal">ZnO</mi></mrow><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub><msub><mi mathvariant="normal">S</mi><mi>x</mi></msub></mrow></mrow></math> thin films deposited by reactive sputtering

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Strain hardening and large tensile elongation in ultrahigh-strength nano-twinned copper

E. Ma; Y. M. Wang; Q. H. Lu; M. L. Sui; L. Lu; K. Lu

Appl. Phys. Lett. 85, 4932–4934 (2004) https://doi.org/10.1063/1.1814431

Abstract

View articletitled, Strain hardening and large tensile elongation in ultrahigh-strength nano-twinned copper

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Interaction between interstitials and arsenic-vacancy complexes in crystalline silicon

Scott A. Harrison; Thomas F. Edgar; Gyeong S. Hwang

Appl. Phys. Lett. 85, 4935–4937 (2004) https://doi.org/10.1063/1.1825616

Abstract

View articletitled, Interaction between interstitials and arsenic-vacancy complexes in crystalline silicon

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

First-principles calculations of the mean inner Coulomb potential for sphalerite type II–VI semiconductors

M. Schowalter; D. Lamoen; A. Rosenauer; P. Kruse; D. Gerthsen

Appl. Phys. Lett. 85, 4938–4940 (2004) https://doi.org/10.1063/1.1823598

Abstract

View articletitled, First-principles calculations of the mean inner Coulomb potential for sphalerite type II–VI semiconductors

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Can correlated substitution enhance the Curie temperature in diluted magnetic semiconductors?

Georges Bouzerar; Timothy Ziman; Josef Kudrnovský

Appl. Phys. Lett. 85, 4941–4943 (2004) https://doi.org/10.1063/1.1826226

Abstract

View articletitled, Can correlated substitution enhance the Curie temperature in diluted magnetic semiconductors?

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Plasma hydrogenation of strain-relaxed $Si Ge ∕ Si$ heterostructure for layer transfer

Peng Chen; Paul K. Chu; T. Höchbauer; M. Nastasi; D. Buca; S. Mantl; N. David Theodore; T. L. Alford; J. W. Mayer; R. Loo; M. Caymax; M. Cai; S. S. Lau

Appl. Phys. Lett. 85, 4944–4946 (2004) https://doi.org/10.1063/1.1824171

Abstract

View articletitled, Plasma hydrogenation of strain-relaxed <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Si</mi><mi mathvariant="normal">Ge</mi><mo>∕</mo><mi mathvariant="normal">Si</mi></mrow></math> heterostructure for layer transfer

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Evidence of $Si ∕ SiGe$ heterojunction roughness scattering

C. W. Liu; M. H. Lee; Y. C. Lee; P. S. Chen; C.-Y. Yu; J.-Y. Wei; S. Maikap

Appl. Phys. Lett. 85, 4947–4949 (2004) https://doi.org/10.1063/1.1828224

Abstract

View articletitled, Evidence of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>Si</mi><mo>∕</mo><mi>SiGe</mi></mrow></math> heterojunction roughness scattering

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Dual role of fluorine at the $Si - Si O_{2}$ interface

L. Tsetseris; X. J. Zhou; D. M. Fleetwood; R. D. Schrimpf; S. T. Pantelides

Appl. Phys. Lett. 85, 4950–4952 (2004) https://doi.org/10.1063/1.1825621

Abstract

View articletitled, Dual role of fluorine at the <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Si</mi><mo>–</mo><mi mathvariant="normal">Si</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></math> interface

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Effect of encapsulation temperature on $Si : P$ $δ$ -doped layers

K. E. J. Goh; L. Oberbeck; M. Y. Simmons; A. R. Hamilton; R. G. Clark

Appl. Phys. Lett. 85, 4953–4955 (2004) https://doi.org/10.1063/1.1827940

Abstract

View articletitled, Effect of encapsulation temperature on <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mrow><mi mathvariant="normal">Si</mi><mo>:</mo><mi mathvariant="normal">P</mi></mrow></mrow></math> <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>δ</mi></mrow></math>-doped layers

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Efficient $p$ -type doping of GaN films by plasma-assisted molecular beam epitaxy

A. Bhattacharyya; W. Li; J. Cabalu; T. D. Moustakas; David J. Smith; R. L. Hervig

Appl. Phys. Lett. 85, 4956–4958 (2004) https://doi.org/10.1063/1.1826223

Abstract

View articletitled, Efficient <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">p</mi></math>-type doping of GaN films by plasma-assisted molecular beam epitaxy

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Interaction between organic semiconductors and LiF dopant

Y. Yuan; D. Grozea; S. Han; Z. H. Lu

Appl. Phys. Lett. 85, 4959–4961 (2004) https://doi.org/10.1063/1.1821653

Abstract

View articletitled, Interaction between organic semiconductors and LiF dopant

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Radiation-induced zero-resistance states with resolved Landau levels

R. G. Mani

Appl. Phys. Lett. 85, 4962–4964 (2004) https://doi.org/10.1063/1.1825066

Abstract

View articletitled, Radiation-induced zero-resistance states with resolved Landau levels

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Highly resistive annealed low-temperature-grown $InGaAs$ with sub- $500 fs$ carrier lifetimes

C. Baker; I. S. Gregory; W. R. Tribe; I. V. Bradley; M. J. Evans; E. H. Linfield; M. Missous

Appl. Phys. Lett. 85, 4965–4967 (2004) https://doi.org/10.1063/1.1824179

Abstract

View articletitled, Highly resistive annealed low-temperature-grown <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mrow><mi mathvariant="normal">InGaAs</mi></mrow></mrow></math> with sub-<math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mrow><mn>500</mn><mspace width="0.3em"></mspace><mi mathvariant="normal">fs</mi></mrow></mrow></math> carrier lifetimes

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Probing electrical transport across oxide interfaces by noncontact atomic force microscopy

Rui Shao; Dawn A. Bonnell

Appl. Phys. Lett. 85, 4968–4970 (2004) https://doi.org/10.1063/1.1825634

Abstract

View articletitled, Probing electrical transport across oxide interfaces by noncontact atomic force microscopy

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MAGNETISM AND SUPERCONDUCTIVITY

Exchange bias and vertical loop shifts in a $Co (32 Å) ∕ Ni O (10 Å) ∕ {[Co (4 Å) ∕ Pt (6 Å)]}_{4}$ multilayer

Z. Y. Liu

Appl. Phys. Lett. 85, 4971–4973 (2004) https://doi.org/10.1063/1.1814817

Abstract

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Field-tuned magnetocaloric effect in metamagnetic manganite system

A. M. Gomes; F. Garcia; A. P. Guimarães; M. S. Reis; V. S. Amaral

Appl. Phys. Lett. 85, 4974–4976 (2004) https://doi.org/10.1063/1.1827926

Abstract

View articletitled, Field-tuned magnetocaloric effect in metamagnetic manganite system

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Large magnetoresistance effects near room temperature in manganite heterojunction

J. R. Sun; C. M. Xiong; B. G. Shen

Appl. Phys. Lett. 85, 4977–4979 (2004) https://doi.org/10.1063/1.1827933

Abstract

View articletitled, Large magnetoresistance effects near room temperature in manganite heterojunction

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Hall effect, magnetization, and conductivity of ${Fe}_{3} O_{4}$ epitaxial thin films

D. Reisinger; P. Majewski; M. Opel; L. Alff; R. Gross

Appl. Phys. Lett. 85, 4980–4982 (2004) https://doi.org/10.1063/1.1808497

Abstract

View articletitled, Hall effect, magnetization, and conductivity of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">Fe</mi><mn>3</mn></msub><msub><mi mathvariant="normal">O</mi><mn>4</mn></msub></mrow></math> epitaxial thin films

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Structural and magnetic phase stability of $Si ∕ Mn As$ superlattices: Tetragonal-distortion-induced ferromagnetism and half-metallicity

Miyoung Kim; A. J. Freeman

Appl. Phys. Lett. 85, 4983–4985 (2004) https://doi.org/10.1063/1.1825073

Abstract

View articletitled, Structural and magnetic phase stability of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Si</mi><mo>∕</mo><mi mathvariant="normal">Mn</mi><mi mathvariant="normal">As</mi></mrow></math> superlattices: Tetragonal-distortion-induced ferromagnetism and half-metallicity

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Dynamics of magnetically retained supraparticle structures in a liquid flow

A. Rida; M. A. M. Gijs

Appl. Phys. Lett. 85, 4986–4988 (2004) https://doi.org/10.1063/1.1823588

Abstract

View articletitled, Dynamics of magnetically retained supraparticle structures in a liquid flow

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Arrays of nanoscale magnetic dots: Fabrication by x-ray interference lithography and characterization

L. J. Heyderman; H. H. Solak; C. David; D. Atkinson; R. P. Cowburn; F. Nolting

Appl. Phys. Lett. 85, 4989–4991 (2004) https://doi.org/10.1063/1.1821649

Abstract

View articletitled, Arrays of nanoscale magnetic dots: Fabrication by x-ray interference lithography and characterization

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Enhanced magnetoresistance in ferromagnetic $\Pr_{0.85} {Ca}_{0.15} Mn O_{3} ∕ ferroelectric$ ${Ba}_{0.6} {Sr}_{0.4} Ti O_{3}$ superlattice films

P. Murugavel; P. Padhan; W. Prellier

Appl. Phys. Lett. 85, 4992–4994 (2004) https://doi.org/10.1063/1.1825075

Abstract

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Tunable magnetization damping in transition metal ternary alloys

S. Ingvarsson; Gang Xiao; S. S. P. Parkin; R. H. Koch

Appl. Phys. Lett. 85, 4995–4997 (2004) https://doi.org/10.1063/1.1828232

Abstract

View articletitled, Tunable magnetization damping in transition metal ternary alloys

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Synthesis and magnetic properties of $Fe - Pt - B$ nanocomposite permanent magnets with low $Pt$ concentrations

Wei Zhang; Dmitri V. Louzguine; Akihisa Inoue

Appl. Phys. Lett. 85, 4998–5000 (2004) https://doi.org/10.1063/1.1824172

Abstract

View articletitled, Synthesis and magnetic properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mrow><mi mathvariant="normal">Fe</mi><mo>–</mo><mi mathvariant="normal">Pt</mi><mo>–</mo><mi mathvariant="normal">B</mi></mrow></mrow></math> nanocomposite permanent magnets with low <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mrow><mi mathvariant="normal">Pt</mi></mrow></mrow></math> concentrations

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DIELECTRICS AND FERROELECTRICITY

Changes in the leakage currents in ${Ba}_{0.8} {Sr}_{0.2} Ti O_{3} ∕ Zr O_{2}$ multilayers due to modulations in oxygen concentration

S. K. Sahoo; D. C. Agrawal; Y. N. Mohapatra; Subhasish B. Majumder; Ram S. Katiyar

Appl. Phys. Lett. 85, 5001–5003 (2004) https://doi.org/10.1063/1.1825074

Abstract

View articletitled, Changes in the leakage currents in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">Ba</mi><mn>0.8</mn></msub><msub><mi mathvariant="normal">Sr</mi><mn>0.2</mn></msub><mi mathvariant="normal">Ti</mi><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub><mo>∕</mo><mi mathvariant="normal">Zr</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></math> multilayers due to modulations in oxygen concentration

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Fabrication of metal–oxide–semiconductor field-effect transistors using crystalline $γ ‐ {Al}_{2} O_{3}$ films as the gate dielectrics

Takayuki Okada; Kazuaki Sawada; Makoto Ishida; Mohammad Shahjahan

Appl. Phys. Lett. 85, 5004–5006 (2004) https://doi.org/10.1063/1.1826228

Abstract

View articletitled, Fabrication of metal–oxide–semiconductor field-effect transistors using crystalline <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>γ</mi><mtext>‐</mtext><msub><mi mathvariant="normal">Al</mi><mn>2</mn></msub><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub></mrow></math> films as the gate dielectrics

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Structural and dielectric properties of epitaxial ${Ba}_{1 - x} {Sr}_{x} Ti O_{3}$ films grown on $La Al O_{3}$ substrates by polymer-assisted deposition

Y. Lin; Jang-Sik Lee; H. Wang; Y. Li; S. R. Foltyn; Q. X. Jia; G. E. Collis; A. K. Burrell; T. M. McCleskey

Appl. Phys. Lett. 85, 5007–5009 (2004) https://doi.org/10.1063/1.1827927

Abstract

View articletitled, Structural and dielectric properties of epitaxial <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">Ba</mi><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub><msub><mi mathvariant="normal">Sr</mi><mi>x</mi></msub><mi mathvariant="normal">Ti</mi><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub></mrow></math> films grown on <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">La</mi><mi mathvariant="normal">Al</mi><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub></mrow></math> substrates by polymer-assisted deposition

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Effects of poling, and implications for metastable phase behavior in barium strontium titanate thin film capacitors

A. Lookman; J. McAneney; R. M. Bowman; J. M. Gregg; J. Kut; S. Rios; A. Ruediger; M. Dawber; J. F. Scott

Appl. Phys. Lett. 85, 5010–5012 (2004) https://doi.org/10.1063/1.1827934

Abstract

View articletitled, Effects of poling, and implications for metastable phase behavior in barium strontium titanate thin film capacitors

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Interface-oxygen-loss-controlled voltage offsets in epitaxial $Pb ({Zr}_{0.52} {Ti}_{0.48}) O_{3}$ thin-film capacitors with ${La}_{0.7} {Sr}_{0.3} Mn O_{3}$ electrodes

Wenbin Wu; K. H. Wong; C. L. Choy

Appl. Phys. Lett. 85, 5013–5015 (2004) https://doi.org/10.1063/1.1827929

Abstract

View articletitled, Interface-oxygen-loss-controlled voltage offsets in epitaxial <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>Pb</mi><mrow><mo>(</mo><msub><mi>Zr</mi><mn>0.52</mn></msub><msub><mi>Ti</mi><mn>0.48</mn></msub><mo>)</mo></mrow><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub></mrow></math> thin-film capacitors with <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>La</mi><mn>0.7</mn></msub><msub><mi>Sr</mi><mn>0.3</mn></msub><mi>Mn</mi><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub></mrow></math> electrodes

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Artificial ferroelectricity in perovskite superlattices

Takaaki Tsurumi; Takakiyo Harigai; Daisuke Tanaka; Song-Min Nam; Hirofumi Kakemoto; Satoshi Wada; Keisuke Saito

Appl. Phys. Lett. 85, 5016–5018 (2004) https://doi.org/10.1063/1.1825057

Abstract

View articletitled, Artificial ferroelectricity in perovskite superlattices

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Positive temperature coefficient of resistivity in $Pt ∕ ({Ba}_{0.7} {Sr}_{0.3}) {TiO}_{3} ∕ {YBa}_{2} {Cu}_{3} O_{7 - x}$ capacitors

Hao Yang; Bin Chen; Jun Miao; Li Zhao; Bo Xu; Xiaoli Dong; Lixin Cao; Xianggang Qiu; Bairu Zhao

Appl. Phys. Lett. 85, 5019–5021 (2004) https://doi.org/10.1063/1.1827928

Abstract

View articletitled, Positive temperature coefficient of resistivity in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Pt</mi><mo>∕</mo><mrow><mo>(</mo><mrow><msub><mrow><mi mathvariant="normal">Ba</mi></mrow><mrow><mn>0.7</mn></mrow></msub><msub><mrow><mi mathvariant="normal">Sr</mi></mrow><mrow><mn>0.3</mn></mrow></msub></mrow><mo>)</mo></mrow><msub><mrow><mi mathvariant="normal">TiO</mi></mrow><mn>3</mn></msub><mo>∕</mo><msub><mrow><mi mathvariant="normal">YBa</mi></mrow><mn>2</mn></msub><msub><mrow><mi mathvariant="normal">Cu</mi></mrow><mn>3</mn></msub><msub><mi mathvariant="normal">O</mi><mrow><mn>7</mn><mtext>-</mtext><mi>x</mi></mrow></msub></mrow></math> capacitors

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Effective masses and complex dielectric function of cubic $Hf O_{2}$

J. C. Garcia; L. M. R. Scolfaro; J. R. Leite; A. T. Lino; V. N. Freire; G. A. Farias; E. F. da Silva, Jr.

Appl. Phys. Lett. 85, 5022–5024 (2004) https://doi.org/10.1063/1.1823584

Abstract

View articletitled, Effective masses and complex dielectric function of cubic <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Hf</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></math>

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NANOSCALE SCIENCE AND DESIGN

Self-assembled carbon-nanotube-based field-effect transistors

Miron Hazani; Dmitry Shvarts; Dana Peled; Victor Sidorov; Ron Naaman

Appl. Phys. Lett. 85, 5025–5027 (2004) https://doi.org/10.1063/1.1823017

Abstract

View articletitled, Self-assembled carbon-nanotube-based field-effect transistors

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Magnetic properties of crystalline ${La}_{0.7} {Ca}_{0.3} Mn O_{3}$ films including a nanoscale disordered phase

V. G. Prokhorov; V. A. Komashko; V. L. Svetchnikov; Y. P. Lee; Y. H. Hyun; J. B. Kim

Appl. Phys. Lett. 85, 5028–5030 (2004) https://doi.org/10.1063/1.1825624

Abstract

View articletitled, Magnetic properties of crystalline <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">La</mi><mn>0.7</mn></msub><msub><mi mathvariant="normal">Ca</mi><mn>0.3</mn></msub><mi mathvariant="normal">Mn</mi><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub></mrow></math> films including a nanoscale disordered phase

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Surface ordering of (In,Ga)As quantum dots controlled by GaAs substrate indexes

Zh. M. Wang; Sh. Seydmohamadi; J. H. Lee; G. J. Salamo

Appl. Phys. Lett. 85, 5031–5033 (2004) https://doi.org/10.1063/1.1823590

Abstract

View articletitled, Surface ordering of (In,Ga)As quantum dots controlled by GaAs substrate indexes

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Scanning probe energy loss spectroscopy below $50 nm$ resolution

F. Festy; R. E. Palmer

Appl. Phys. Lett. 85, 5034–5036 (2004) https://doi.org/10.1063/1.1818742

Abstract

View articletitled, Scanning probe energy loss spectroscopy below <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>50</mn><mspace width="0.3em"></mspace><mi>nm</mi></mrow></math> resolution

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Fabrication of three-dimensional photonic crystal with alignment based on electron beam lithography

G. Subramania; S. Y. Lin

Appl. Phys. Lett. 85, 5037–5039 (2004) https://doi.org/10.1063/1.1825623

Abstract

View articletitled, Fabrication of three-dimensional photonic crystal with alignment based on electron beam lithography

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Localized surface plasmon singularities in amplifying media

N. M. Lawandy

Appl. Phys. Lett. 85, 5040–5042 (2004) https://doi.org/10.1063/1.1825058

Abstract

View articletitled, Localized surface plasmon singularities in amplifying media

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Charging control of $InP ∕ GaInP$ quantum dots by heterostructure design

Jonas Persson; Dan Hessman; Mats-Erik Pistol; Werner Seifert; Lars Samuelson

Appl. Phys. Lett. 85, 5043–5045 (2004) https://doi.org/10.1063/1.1827327

Abstract

View articletitled, Charging control of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mrow><mi mathvariant="normal">InP</mi><mo>∕</mo><mi mathvariant="normal">GaInP</mi></mrow></mrow></math> quantum dots by heterostructure design

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Photoexcitation of excitons in self-assembled quantum dots

H. Pettersson; L. Landin; R. Liu; W. Seifert; M.-E. Pistol; L. Samuelson

Appl. Phys. Lett. 85, 5046–5048 (2004) https://doi.org/10.1063/1.1824174

Abstract

View articletitled, Photoexcitation of excitons in self-assembled quantum dots

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Nucleation and growth of deformation twins in nanocrystalline aluminum

Y. T. Zhu; X. Z. Liao; S. G. Srinivasan; Y. H. Zhao; M. I. Baskes; F. Zhou; E. J. Lavernia

Appl. Phys. Lett. 85, 5049–5051 (2004) https://doi.org/10.1063/1.1823042

Abstract

View articletitled, Nucleation and growth of deformation twins in nanocrystalline aluminum

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Fabrication and electrical characteristics of high-performance ZnO nanorod field-effect transistors

Won Il Park; Jin Suk Kim; Gyu-Chul Yi; M. H. Bae; H.-J. Lee

Appl. Phys. Lett. 85, 5052–5054 (2004) https://doi.org/10.1063/1.1821648

Abstract

View articletitled, Fabrication and electrical characteristics of high-performance ZnO nanorod field-effect transistors

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Megasonic-assisted development of nanostructures: Investigations on high aspect ratio nanoholes

David Küpper; Daniel Küpper; Yordan M. Georgiev; Thorsten Wahlbrink; Wolfgang Henschel; Guido Bell; Heinrich Kurz

Appl. Phys. Lett. 85, 5055–5057 (2004) https://doi.org/10.1063/1.1819986

Abstract

View articletitled, Megasonic-assisted development of nanostructures: Investigations on high aspect ratio nanoholes

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Enhancement of luminescent properties of ZnS:Mn nanophosphors by controlled ZnO capping

N. Karar; Harish Chander; S. M. Shivaprasad

Appl. Phys. Lett. 85, 5058–5060 (2004) https://doi.org/10.1063/1.1815059

Abstract

View articletitled, Enhancement of luminescent properties of ZnS:Mn nanophosphors by controlled ZnO capping

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Size self-scaling effect in stacked $InAs ∕ InAlAs$ nanowire multilayers

Z. Z. Sun; S. F. Yoon; J. Wu; Z. G. Wang

Appl. Phys. Lett. 85, 5061–5063 (2004) https://doi.org/10.1063/1.1818335

Abstract

View articletitled, Size self-scaling effect in stacked <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mrow><mi mathvariant="normal">InAs</mi><mo>∕</mo><mi mathvariant="normal">InAlAs</mi></mrow></mrow></math> nanowire multilayers

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Nanoscale polymer recognition by spectral signature in scattering infrared near-field microscopy

T. Taubner; R. Hillenbrand; F. Keilmann

Appl. Phys. Lett. 85, 5064–5066 (2004) https://doi.org/10.1063/1.1827334

Abstract

View articletitled, Nanoscale polymer recognition by spectral signature in scattering infrared near-field microscopy

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Biomimetic titanium dioxide film with structural color and extremely stable hydrophilicity

Zhong-Ze Gu; Akira Fujishima; Osamu Sato

Appl. Phys. Lett. 85, 5067–5069 (2004) https://doi.org/10.1063/1.1825052

Abstract

View articletitled, Biomimetic titanium dioxide film with structural color and extremely stable hydrophilicity

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DEVICE PHYSICS

Delay effect of switch-on in a supertwisted nematic cell

Fuzi Yang; Youmei Dong; L. Z. Ruan; J. R. Sambles

Appl. Phys. Lett. 85, 5070–5072 (2004) https://doi.org/10.1063/1.1826240

Abstract

View articletitled, Delay effect of switch-on in a supertwisted nematic cell

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Semiconducting-polymer-based position-sensitive detectors

D. Kabra; Th. B. Singh; K. S. Narayan

Appl. Phys. Lett. 85, 5073–5075 (2004) https://doi.org/10.1063/1.1823597

Abstract

View articletitled, Semiconducting-polymer-based position-sensitive detectors

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Valence-band tunneling induced low frequency noise in ultrathin oxide $(15 Å)$ $n$ -type metal-oxide-semiconductor field effect transistors

J. W. Wu; J. W. You; H. C. Ma; C. C. Cheng; C. S. Chang; G. W. Huang; T. Wang

Appl. Phys. Lett. 85, 5076–5077 (2004) https://doi.org/10.1063/1.1827930

Abstract

View articletitled, Valence-band tunneling induced low frequency noise in ultrathin oxide <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mrow><mrow><mo>(</mo><mrow><mn>15</mn><mspace width="0.3em"></mspace><mi mathvariant="normal">Å</mi></mrow><mo>)</mo></mrow></mrow></mrow></math> <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>n</mi></mrow></math>-type metal-oxide-semiconductor field effect transistors

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Effects of polarized organosilane self-assembled monolayers on organic single-crystal field-effect transistors

J. Takeya; T. Nishikawa; T. Takenobu; S. Kobayashi; Y. Iwasa; T. Mitani; C. Goldmann; C. Krellner; B. Batlogg

Appl. Phys. Lett. 85, 5078–5080 (2004) https://doi.org/10.1063/1.1826239

Abstract

View articletitled, Effects of polarized organosilane self-assembled monolayers on organic single-crystal field-effect transistors

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Infrared photocurrent spectral response from plastic solar cell with low-band-gap polyfluorene and fullerene derivative

Xiangjun Wang; Erik Perzon; Juan Luis Delgado; Pilar de la Cruz; Fengling Zhang; Fernando Langa; Mats Andersson; Olle Inganäs

Appl. Phys. Lett. 85, 5081–5083 (2004) https://doi.org/10.1063/1.1825070

Abstract

View articletitled, Infrared photocurrent spectral response from plastic solar cell with low-band-gap polyfluorene and fullerene derivative

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Unique architecture and concept for high-performance organic transistors

Liping Ma; Yang Yang

Appl. Phys. Lett. 85, 5084–5086 (2004) https://doi.org/10.1063/1.1821629

Abstract

View articletitled, Unique architecture and concept for high-performance organic transistors

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Gate-alloy-related kink effect for metamorphic high-electron-mobility transistors

Y. J. Chen; W. C. Hsu; C. S. Lee; T. B. Wang; C. H. Tseng; J. C. Huang; D. H. Huang; C. L. Wu

Appl. Phys. Lett. 85, 5087–5089 (2004) https://doi.org/10.1063/1.1823600

Abstract

View articletitled, Gate-alloy-related kink effect for metamorphic high-electron-mobility transistors

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APPLIED BIOPHYSICS

On-site manipulation of single whole-genome DNA molecules using optical tweezers

Hidehiro Oana; Koji Kubo; Kenichi Yoshikawa; Haruyuki Atomi; Tadayuki Imanaka

Appl. Phys. Lett. 85, 5090–5092 (2004) https://doi.org/10.1063/1.1825064

Abstract

View articletitled, On-site manipulation of single whole-genome DNA molecules using optical tweezers

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Continuous microfluidic immunomagnetic cell separation

David W. Inglis; R. Riehn; R. H. Austin; J. C. Sturm

Appl. Phys. Lett. 85, 5093–5095 (2004) https://doi.org/10.1063/1.1823015

Abstract

View articletitled, Continuous microfluidic immunomagnetic cell separation

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INTERDISCIPLINARY AND GENERAL PHYSICS

Thickness determination of very thin amorphous and microcrystalline silicon layers using reflection/transmission measurements

A. Gordijn; J. K. Rath; R. E. I. Schropp

Appl. Phys. Lett. 85, 5096–5098 (2004) https://doi.org/10.1063/1.1825063

Abstract

View articletitled, Thickness determination of very thin amorphous and microcrystalline silicon layers using reflection/transmission measurements

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Relativistic laser plasma from micron-sized argon clusters as a debris-free x-ray source for pulse x-ray diffraction

Yuji Fukuda; Yutaka Akahane; Makoto Aoyama; Norihiro Inoue; Hideki Ueda; Yoshiki Nakai; Koichi Tsuji; Koichi Yamakawa; Yoichiro Hironaka; Hiroaki Kishimura; Hiroto Morishita; Ken-ichi Kondo; Kazutaka G. Nakamura

Appl. Phys. Lett. 85, 5099–5101 (2004) https://doi.org/10.1063/1.1823589

Abstract

View articletitled, Relativistic laser plasma from micron-sized argon clusters as a debris-free x-ray source for pulse x-ray diffraction

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Measuring electro-optic coefficients of poled polymers using fiber-optic Mach–Zehnder interferometer

Yi-Ping Wang; Jian-Ping Chen; Xin-Wan Li; Jian-Xun Hong; Xiao-Hong Zhang; Jun-He Zhou; Ai-Lun Ye

Appl. Phys. Lett. 85, 5102–5103 (2004) https://doi.org/10.1063/1.1826221

Abstract

View articletitled, Measuring electro-optic coefficients of poled polymers using fiber-optic Mach–Zehnder interferometer

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ERRATA

Erratum: “Nanoscale silicon wires synthesized using simple physical evaporation” [Appl. Phys. Lett. 72, 3458 (1998)]

D. P. Yu; Z. G. Bai; Y. Ding; Q. L. Hang; H. Z. Zhang; J. J. Wang; Y. H. Zou; W. Qian; G. C. Xiong; H. T. Zhou; S. Q. Feng

Appl. Phys. Lett. 85, 5104 (2004) https://doi.org/10.1063/1.1825625

Extract

View articletitled, Erratum: “Nanoscale silicon wires synthesized using simple physical evaporation” [Appl. Phys. Lett. 72, 3458 (1998)]

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Erratum: “Intraband absorption for $InAs ∕ GaAs$ quantum dot infrared photodetectors” [Appl. Phys. Lett. 84, 1934 (2004)]

J.-Z. Zhang; I. Galbraith

Appl. Phys. Lett. 85, 5105 (2004) https://doi.org/10.1063/1.1827347

Extract

View articletitled, Erratum: “Intraband absorption for <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>InAs</mi><mo>∕</mo><mi>GaAs</mi></mrow></math> quantum dot infrared photodetectors” [Appl. Phys. Lett. 84, 1934 (2004)]

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Publisher’s Note: “ $n$ -type conductivity in ultrananocrystalline diamond films” [Appl. Phys. Lett. 85, 1680 (2004)]

Oliver A. Williams; Stephane Curat; Jennifer E. Gerbi; Dieter M. Gruen; Richard B. Jackman

Appl. Phys. Lett. 85, 5106 (2004) https://doi.org/10.1063/1.1829716

Extract

View articletitled, Publisher’s Note: “<math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>n</mi></mrow></math>-type conductivity in ultrananocrystalline diamond films” [Appl. Phys. Lett. 85, 1680 (2004)]

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Issues

LASERS, OPTICS, AND OPTOELECTRONICS

PLASMAS AND ELECTRICAL DISCHARGES

STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

ELECTRONIC TRANSPORT AND SEMICONDUCTORS

MAGNETISM AND SUPERCONDUCTIVITY

DIELECTRICS AND FERROELECTRICITY

NANOSCALE SCIENCE AND DESIGN

DEVICE PHYSICS

APPLIED BIOPHYSICS

INTERDISCIPLINARY AND GENERAL PHYSICS

ERRATA

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