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LASERS, OPTICS, AND OPTOELECTRONICS

Arrays of microlenses of complex shapes prepared by reaction-diffusion in thin films of ionically doped gels

Christopher J. Campbell; Eric Baker; Marcin Fialkowski; Bartosz A. Grzybowski

Appl. Phys. Lett. 85, 1871–1873 (2004) https://doi.org/10.1063/1.1787595

Abstract

View articletitled, Arrays of microlenses of complex shapes prepared by reaction-diffusion in thin films of ionically doped gels

Supplementary Material

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$InGaSb$ photodetectors using an $InGaSb$ substrate for $2 μ m$ applications

Tamer F. Refaat; M. Nurul Abedin; Vinay Bhagwat; Ishwara B. Bhat; Partha S. Dutta; Upendra N. Singh

Appl. Phys. Lett. 85, 1874–1876 (2004) https://doi.org/10.1063/1.1787893

Abstract

View articletitled, <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">InGaSb</mi></mrow></math> photodetectors using an <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">InGaSb</mi></mrow></math> substrate for <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>2</mn><mspace width="0.3em"></mspace><mi>μ</mi><mi mathvariant="normal">m</mi></mrow></math> applications

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Video-rate compatible photorefractive polymers with stable dynamic properties under continuous operation

Canek Fuentes-Hernandez; Jayan Thomas; Roberto Termine; Gerald Meredith; Nasser Peyghambarian; Bernard Kippelen; Steve Barlow; Gregory Walker; Seth R. Marder; Michiharu Yamamoto; Kevin Cammack; Kenji Matsumoto

Appl. Phys. Lett. 85, 1877–1879 (2004) https://doi.org/10.1063/1.1787956

Abstract

View articletitled, Video-rate compatible photorefractive polymers with stable dynamic properties under continuous operation

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Ultrafast dynamics of the third-order nonlinear response in a two-dimensional $InP$ -based photonic crystal

F. Raineri; Crina Cojocaru; P. Monnier; A. Levenson; R. Raj; C. Seassal; X. Letartre; P. Viktorovitch

Appl. Phys. Lett. 85, 1880–1882 (2004) https://doi.org/10.1063/1.1788884

Abstract

View articletitled, Ultrafast dynamics of the third-order nonlinear response in a two-dimensional <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">InP</mi></mrow></math>-based photonic crystal

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Highly efficient second-harmonic generation in doubly resonantplanar microcavities

Marco Liscidini; Lucio Claudio Andreani

Appl. Phys. Lett. 85, 1883–1885 (2004) https://doi.org/10.1063/1.1786657

Abstract

View articletitled, Highly efficient second-harmonic generation in doubly resonantplanar microcavities

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Ultrawide tuning range in doped organic solid-state lasers

D. Schneider; T. Rabe; T. Riedl; T. Dobbertin; M. Kröger; E. Becker; H.-H. Johannes; W. Kowalsky; T. Weimann; J. Wang; P. Hinze

Appl. Phys. Lett. 85, 1886–1888 (2004) https://doi.org/10.1063/1.1791742

Abstract

View articletitled, Ultrawide tuning range in doped organic solid-state lasers

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Vertical-cavity semiconductor devices for generation and detection of fluorescence emission on a single chip

P. A. Porta; H. D. Summers

Appl. Phys. Lett. 85, 1889–1891 (2004) https://doi.org/10.1063/1.1787153

Abstract

View articletitled, Vertical-cavity semiconductor devices for generation and detection of fluorescence emission on a single chip

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Directional emission from asymmetric microlaser resonators of π-conjugated polymers

R. C. Polson; Z. V. Vardeny

Appl. Phys. Lett. 85, 1892–1894 (2004) https://doi.org/10.1063/1.1753064

Abstract

View articletitled, Directional emission from asymmetric microlaser resonators of π-conjugated polymers

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Direct laser writing and characterization of “Slanted Pore” Photonic Crystals

Markus Deubel; Martin Wegener; Artan Kaso; Sajeev John

Appl. Phys. Lett. 85, 1895–1897 (2004) https://doi.org/10.1063/1.1792802

Abstract

View articletitled, Direct laser writing and characterization of “Slanted Pore” Photonic Crystals

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Absorption, emission spectrum properties, and efficient laser performances of $Yb : Y_{3} {ScAl}_{4} O_{12}$ ceramics

J. Saikawa; Y. Sato; T. Taira; A. Ikesue

Appl. Phys. Lett. 85, 1898–1900 (2004) https://doi.org/10.1063/1.1791339

Abstract

View articletitled, Absorption, emission spectrum properties, and efficient laser performances of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Yb</mi><mo>:</mo><msub><mi mathvariant="normal">Y</mi><mn>3</mn></msub><msub><mrow><mi mathvariant="normal">ScAl</mi></mrow><mn>4</mn></msub><msub><mi mathvariant="normal">O</mi><mrow><mn>12</mn></mrow></msub></mrow></math> ceramics

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Lasing action and photodegradation of Disperse Orange 11 dye in liquid solution

Brent F. Howell; Mark G. Kuzyk

Appl. Phys. Lett. 85, 1901–1903 (2004) https://doi.org/10.1063/1.1791323

Abstract

View articletitled, Lasing action and photodegradation of Disperse Orange 11 dye in liquid solution

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Optical properties of $InP ∕ GaInP$ quantum-dot laser structures

G. M. Lewis; J. Lutti; P. M. Smowton; P. Blood; A. B. Krysa; S. L. Liew

Appl. Phys. Lett. 85, 1904–1906 (2004) https://doi.org/10.1063/1.1794379

Abstract

View articletitled, Optical properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">InP</mi><mo>∕</mo><mi mathvariant="normal">GaInP</mi></mrow></math> quantum-dot laser structures

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Front-coupling of a prefocused x-ray beam into a monomodal planar waveguide

Christian Fuhse; Ansgar Jarre; Christoph Ollinger; Jens Seeger; Tim Salditt; Remi Tucoulou

Appl. Phys. Lett. 85, 1907–1909 (2004) https://doi.org/10.1063/1.1791736

Abstract

View articletitled, Front-coupling of a prefocused x-ray beam into a monomodal planar waveguide

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High-quantum-efficiency erbium-doped optical fiber and the effective deactivator

B. Peng; X. M. Qiu; L. Jiang; Z. C. Fan; W. Huang

Appl. Phys. Lett. 85, 1910–1912 (2004) https://doi.org/10.1063/1.1791743

Abstract

View articletitled, High-quantum-efficiency erbium-doped optical fiber and the effective deactivator

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High external efficiency in a monomode full-photonic-crystal laserunder continuous wave electrical injection

A. Talneau; L. LeGratiet; J. L. Gentner; A. Berrier; M. Mulot; S. Anand; S. Olivier

Appl. Phys. Lett. 85, 1913–1915 (2004) https://doi.org/10.1063/1.1789573

Abstract

View articletitled, High external efficiency in a monomode full-photonic-crystal laserunder continuous wave electrical injection

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PLASMAS AND ELECTRICAL DISCHARGES

Pulsed electron beam generation in a simple discharge device

M. J. Rhee; M. Strikovski

Appl. Phys. Lett. 85, 1916–1918 (2004) https://doi.org/10.1063/1.1784540

Abstract

View articletitled, Pulsed electron beam generation in a simple discharge device

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Monochromatic imaging and angular distribution measurements of extreme ultraviolet light from laser-produced $Sn$ and ${SnO}_{2}$ plasmas

Y. Tao; F. Sohbatzadeh; H. Nishimura; R. Matsui; T. Hibino; T. Okuno; S. Fujioka; K. Nagai; T. Norimatsu; K. Nishihara; N. Miyanaga; Y. Izawa; A. Sunahara; T. Kawamura

Appl. Phys. Lett. 85, 1919–1921 (2004) https://doi.org/10.1063/1.1788878

Abstract

View articletitled, Monochromatic imaging and angular distribution measurements of extreme ultraviolet light from laser-produced <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Sn</mi></mrow></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mi mathvariant="normal">SnO</mi></mrow><mn>2</mn></msub></mrow></math> plasmas

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Relation between the ${CF}_{2}$ radical and plasma density measured using LIF and cutoff probe in a ${CF}_{4}$ inductively coupled plasma

Jung-Hyung Kim; Yong-Hyeon Shin; Kwang-Hwa Chung; Yong-Shim Yoo

Appl. Phys. Lett. 85, 1922–1924 (2004) https://doi.org/10.1063/1.1788880

Abstract

View articletitled, Relation between the <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mi mathvariant="normal">CF</mi></mrow><mn>2</mn></msub></mrow></math> radical and plasma density measured using LIF and cutoff probe in a <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mi mathvariant="normal">CF</mi></mrow><mn>4</mn></msub></mrow></math> inductively coupled plasma

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Light-induced metastability in hydrogenated nanocrystalline silicon solar cells

Baojie Yan; Guozhen Yue; Jessica M. Owens; Jeffrey Yang; Subhendu Guha

Appl. Phys. Lett. 85, 1925–1927 (2004) https://doi.org/10.1063/1.1790072

Abstract

View articletitled, Light-induced metastability in hydrogenated nanocrystalline silicon solar cells

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Heteroepitaxy of high-quality $Ge$ on $Si$ by nanoscale $Ge$ seeds grown through a thin layer of ${SiO}_{2}$

Qiming Li; Ying-Bing Jiang; Huifang Xu; Stephen Hersee; Sang M. Han

Appl. Phys. Lett. 85, 1928–1930 (2004) https://doi.org/10.1063/1.1790027

Abstract

View articletitled, Heteroepitaxy of high-quality <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Ge</mi></mrow></math> on <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Si</mi></mrow></math> by nanoscale <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Ge</mi></mrow></math> seeds grown through a thin layer of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mi mathvariant="normal">SiO</mi></mrow><mn>2</mn></msub></mrow></math>

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Below band gap photoreflectance transitions in epitaxial GaN

Phil W. Yu; Jerry D. Clark; David C. Look; C. Q. Chen; Jinwei Yang; Edmundas Koutstis; M. Asif Khan; Denis V. Tsvertkov; Vladimir A. Dmitriev

Appl. Phys. Lett. 85, 1931–1933 (2004) https://doi.org/10.1063/1.1780602

Abstract

View articletitled, Below band gap photoreflectance transitions in epitaxial GaN

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Laser-induced wavy pattern formation in metal thin films

Ke Xiao; Zi Sheng Guan; Guo Jie Wang; Lei Jiang; Dao Ben Zhu; Yu Ren Wang

Appl. Phys. Lett. 85, 1934–1936 (2004) https://doi.org/10.1063/1.1787891

Abstract

View articletitled, Laser-induced wavy pattern formation in metal thin films

Supplementary Material

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Indirect optical absorption of single crystalline $β {- FeSi}_{2}$

Haruhiko Udono; Isao Kikuma; Tsuyoshi Okuno; Yasuaki Masumoto; Hiroyuki Tajima

Appl. Phys. Lett. 85, 1937–1939 (2004) https://doi.org/10.1063/1.1790590

Abstract

View articletitled, Indirect optical absorption of single crystalline <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>β</mi><msub><mrow><mtext>-</mtext><mi mathvariant="normal">FeSi</mi></mrow><mn>2</mn></msub></mrow></math>

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Role of $N$ ions in the optical and morphological properties of $InGaAsN$ quantum wells for $1.3 - 1.5 μ m$ applications

J. Miguel-Sánchez; A. Guzmán; E. Muñoz

Appl. Phys. Lett. 85, 1940–1942 (2004) https://doi.org/10.1063/1.1790591

Abstract

View articletitled, Role of <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">N</mi></math> ions in the optical and morphological properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">InGaAsN</mi></mrow></math> quantum wells for <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>1.3</mn><mo>–</mo><mn>1.5</mn><mspace width="0.3em"></mspace><mi>μ</mi><mi mathvariant="normal">m</mi></mrow></math> applications

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Anharmonic decay of phonons in strain-free wurtzite $AlN$

J. G. Tischler; J. A. Freitas, Jr.

Appl. Phys. Lett. 85, 1943–1945 (2004) https://doi.org/10.1063/1.1787957

Abstract

View articletitled, Anharmonic decay of phonons in strain-free wurtzite <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">AlN</mi></mrow></math>

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Recombination dynamics of localized excitons in InGaN quantum dots

T. Bartel; M. Dworzak; M. Strassburg; A. Hoffmann; A. Strittmatter; D. Bimberg

Appl. Phys. Lett. 85, 1946–1948 (2004) https://doi.org/10.1063/1.1790599

Abstract

View articletitled, Recombination dynamics of localized excitons in InGaN quantum dots

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Mechanical tuning of holographic polymer-dispersed liquid crystal reflection gratings

Scott A. Holmstrom; Lalgudi V. Natarajan; Vincent P. Tondiglia; Richard L. Sutherland; Timothy J. Bunning

Appl. Phys. Lett. 85, 1949–1951 (2004) https://doi.org/10.1063/1.1790601

Abstract

View articletitled, Mechanical tuning of holographic polymer-dispersed liquid crystal reflection gratings

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Arrays of wirelike microstructures of $Ag$ with visible wavelength transparent plasmonic response at near-ultraviolet and midinfrared regions

A. Biswas; R. Kunz; O. C. Aktas; M. Elbahri; R. Adelung; H. Takele; U. Saeed; U. Schürmann; V. Zaporojtchenko; F. Faupel

Appl. Phys. Lett. 85, 1952–1954 (2004) https://doi.org/10.1063/1.1788895

Abstract

View articletitled, Arrays of wirelike microstructures of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Ag</mi></mrow></math> with visible wavelength transparent plasmonic response at near-ultraviolet and midinfrared regions

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Hydrogen dilution profiling for hydrogenated microcrystallinesilicon solar cells

Baojie Yan; Guozhen Yue; Jeffrey Yang; Subhendu Guha; D. L. Williamson; Daxing Han; Chun-Sheng Jiang

Appl. Phys. Lett. 85, 1955–1957 (2004) https://doi.org/10.1063/1.1788877

Abstract

View articletitled, Hydrogen dilution profiling for hydrogenated microcrystallinesilicon solar cells

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Effects of $Ti - W$ codoping on the optical and electrical switching of vanadium dioxide thin films grown by a reactive pulsed laser deposition

M. Soltani; M. Chaker; E. Haddad; R. V. Kruzelecky; J. Margot

Appl. Phys. Lett. 85, 1958–1960 (2004) https://doi.org/10.1063/1.1788883

Abstract

View articletitled, Effects of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Ti</mi><mo>–</mo><mi mathvariant="normal">W</mi></mrow></math> codoping on the optical and electrical switching of vanadium dioxide thin films grown by a reactive pulsed laser deposition

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Compositional dependence of phase separation in $InGaN$ layers

M. Rao; D. Kim; S. Mahajan

Appl. Phys. Lett. 85, 1961–1963 (2004) https://doi.org/10.1063/1.1791327

Abstract

View articletitled, Compositional dependence of phase separation in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">InGaN</mi></mrow></math> layers

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Structural and optical properties of $Ba ({Co}_{x}, {Ti}_{1 - x}) O_{3}$ thin films fabricatedby sol-gel process

Y. W. Li; J. L. Sun; X. J. Meng; J. H. Chu; W. F. Zhang

Appl. Phys. Lett. 85, 1964–1966 (2004) https://doi.org/10.1063/1.1786654

Abstract

View articletitled, Structural and optical properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Ba</mi><mrow><mo>(</mo><mrow><msub><mrow><mi mathvariant="normal">Co</mi></mrow><mi>x</mi></msub><mo>,</mo><msub><mrow><mi mathvariant="normal">Ti</mi></mrow><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub></mrow><mo>)</mo></mrow><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub></mrow></math> thin films fabricatedby sol-gel process

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Structural evolution of dislocation half-loops in epitaxial ${BaTiO}_{3}$ thin films during high-temperature annealing

H. P. Sun; X. Q. Pan; J. H. Haeni; D. G. Schlom

Appl. Phys. Lett. 85, 1967–1969 (2004) https://doi.org/10.1063/1.1789233

Abstract

View articletitled, Structural evolution of dislocation half-loops in epitaxial <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mi mathvariant="normal">BaTiO</mi></mrow><mn>3</mn></msub></mrow></math> thin films during high-temperature annealing

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Crack-free and conductive Si-doped $Al N ∕ Ga N$ distributed Bragg reflectors grown on 6H-SiC(0001)

Tommy Ive; Oliver Brandt; Helmar Kostial; Thorsten Hesjedal; Manfred Ramsteiner; Klaus H. Ploog

Appl. Phys. Lett. 85, 1970–1972 (2004) https://doi.org/10.1063/1.1791738

Abstract

View articletitled, Crack-free and conductive Si-doped <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Al</mi><mi mathvariant="normal">N</mi><mo>∕</mo><mi mathvariant="normal">Ga</mi><mi mathvariant="normal">N</mi></mrow></math> distributed Bragg reflectors grown on 6H-SiC(0001)

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Lack of the critical pressure for weakening of size-induced stiffness in $3 C - SiC$ nanocrystals under hydrostatic compression

Haozhe Liu; Jingzhu Hu; Jinfu Shu; Daniel Häusermann; Ho-kwang Mao

Appl. Phys. Lett. 85, 1973–1975 (2004) https://doi.org/10.1063/1.1789240

Abstract

View articletitled, Lack of the critical pressure for weakening of size-induced stiffness in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>3</mn><mi mathvariant="normal">C</mi><mo>–</mo><mi mathvariant="normal">SiC</mi></mrow></math> nanocrystals under hydrostatic compression

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Direct evidence for selective impurity incorporation at the crystal domain boundaries in epitaxial ZnO layers

F. Bertram; D. Forster; J. Christen; N. Oleynik; A. Dadgar; A. Krost

Appl. Phys. Lett. 85, 1976–1978 (2004) https://doi.org/10.1063/1.1791746

Abstract

View articletitled, Direct evidence for selective impurity incorporation at the crystal domain boundaries in epitaxial ZnO layers

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Differential Hall effect profiling of ultrashallow junctions in Sb implanted silicon

T. Alzanki; R. Gwilliam; N. Emerson; B. J. Sealy

Appl. Phys. Lett. 85, 1979–1980 (2004) https://doi.org/10.1063/1.1792378

Abstract

View articletitled, Differential Hall effect profiling of ultrashallow junctions in Sb implanted silicon

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Critical effects of substrate terraces and steps morphology on the growth mode of epitaxial ${SrRuO}_{3}$ films

F. Sánchez; G. Herranz; I. C. Infante; J. Fontcuberta; M. V. García-Cuenca; C. Ferrater; M. Varela

Appl. Phys. Lett. 85, 1981–1983 (2004) https://doi.org/10.1063/1.1786361

Abstract

View articletitled, Critical effects of substrate terraces and steps morphology on the growth mode of epitaxial <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mi mathvariant="normal">SrRuO</mi></mrow><mn>3</mn></msub></mrow></math> films

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Minority carrier diffusion length and lifetime for electrons in a type-II $In As ∕ Ga Sb$ superlattice photodiode

Jian V. Li; Shun Lien Chuang; Eric M. Jackson; Edward Aifer

Appl. Phys. Lett. 85, 1984–1986 (2004) https://doi.org/10.1063/1.1787598

Abstract

View articletitled, Minority carrier diffusion length and lifetime for electrons in a type-II <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">In</mi><mi mathvariant="normal">As</mi><mo>∕</mo><mi mathvariant="normal">Ga</mi><mi mathvariant="normal">Sb</mi></mrow></math> superlattice photodiode

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Variable range hopping in a $C_{60}$ field-effect transistor

Kazunaga Horiuchi; Shin Uchino; Shinobu Hashii; Akira Hashimoto; Tomohiro Kato; Takahiko Sasaki; Nobuyuki Aoki; Yuichi Ochiai

Appl. Phys. Lett. 85, 1987–1989 (2004) https://doi.org/10.1063/1.1790036

Abstract

View articletitled, Variable range hopping in a <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">C</mi><mrow><mn>60</mn></mrow></msub></mrow></math> field-effect transistor

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Ballistic electron emission luminescence spectroscopy of an InAs quantum dot heterostructure

Wei Yi; Ian Appelbaum; K. J. Russell; V. Narayanamurti; M. P. Hanson; A. C. Gossard

Appl. Phys. Lett. 85, 1990–1992 (2004) https://doi.org/10.1063/1.1790595

Abstract

View articletitled, Ballistic electron emission luminescence spectroscopy of an InAs quantum dot heterostructure

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Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline ${InGaO}_{3} {(Z nO)}_{5}$ films

Kenji Nomura; Toshio Kamiya; Hiromichi Ohta; Kazushige Ueda; Masahiro Hirano; Hideo Hosono

Appl. Phys. Lett. 85, 1993–1995 (2004) https://doi.org/10.1063/1.1788897

Abstract

View articletitled, Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mi mathvariant="normal">InGaO</mi></mrow><mn>3</mn></msub><msub><mrow><mo>(</mo><mi mathvariant="normal">Z</mi><mi mathvariant="normal">nO</mi><mo>)</mo></mrow><mn>5</mn></msub></mrow></math> films

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Tunnel magnetoresistance in $GaMnAs$ ⁠: Going beyond Jullière formula

L. Brey; C. Tejedor; J. Fernández-Rossier

Appl. Phys. Lett. 85, 1996–1998 (2004) https://doi.org/10.1063/1.1789241

Abstract

View articletitled, Tunnel magnetoresistance in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">GaMnAs</mi></mrow></math>⁠: Going beyond Jullière formula

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Visualization of buried SiGe quantum dots at cleavages by cross-sectional atomic force microscopy

M. S. Dunaevskii; A. N. Titkov; Z. F. Krasilnik; A. V. Novikov; D. N. Lobanov; R. Laiho

Appl. Phys. Lett. 85, 1999–2001 (2004) https://doi.org/10.1063/1.1791744

Abstract

View articletitled, Visualization of buried SiGe quantum dots at cleavages by cross-sectional atomic force microscopy

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Electrical transport properties of single ZnO nanorods

Y. W. Heo; L. C. Tien; D. P. Norton; B. S. Kang; F. Ren; B. P. Gila; S. J. Pearton

Appl. Phys. Lett. 85, 2002–2004 (2004) https://doi.org/10.1063/1.1792373

Abstract

View articletitled, Electrical transport properties of single ZnO nanorods

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Time-resolved detection of individual electrons in a quantum dot

R. Schleser; E. Ruh; T. Ihn; K. Ensslin; D. C. Driscoll; A. C. Gossard

Appl. Phys. Lett. 85, 2005–2007 (2004) https://doi.org/10.1063/1.1784875

Abstract

View articletitled, Time-resolved detection of individual electrons in a quantum dot

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Confinement in silicon nanowires: Optical properties

S. Bhattacharya; D. Banerjee; K. W. Adu; S. Samui; Somnath Bhattacharyya

Appl. Phys. Lett. 85, 2008–2010 (2004) https://doi.org/10.1063/1.1787164

Abstract

View articletitled, Confinement in silicon nanowires: Optical properties

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MAGNETISM AND SUPERCONDUCTIVITY

Magnetic properties and band structures of half-metal-type ${Co}_{2} Cr Ga$ Heusler alloy

R. Y. Umetsu; K. Kobayashi; R. Kainuma; A. Fujita; K. Fukamichi; K. Ishida; A. Sakuma

Appl. Phys. Lett. 85, 2011–2013 (2004) https://doi.org/10.1063/1.1790029

Abstract

View articletitled, Magnetic properties and band structures of half-metal-type <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">Co</mi><mn>2</mn></msub><mi mathvariant="normal">Cr</mi><mi mathvariant="normal">Ga</mi></mrow></math> Heusler alloy

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Electronic structure and spin polarization of $MnGaP$

Leeor Kronik; Manish Jain; James R. Chelikowsky

Appl. Phys. Lett. 85, 2014–2016 (2004) https://doi.org/10.1063/1.1787895

Abstract

View articletitled, Electronic structure and spin polarization of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">MnGaP</mi></mrow></math>

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Properties of $Mg B_{2}$ thin films with carbon doping

A. V. Pogrebnyakov; X. X. Xi; J. M. Redwing; V. Vaithyanathan; D. G. Schlom; A. Soukiassian; S. B. Mi; C. L. Jia; J. E. Giencke; C. B. Eom; J. Chen; Y. F. Hu; Y. Cui; Qi Li

Appl. Phys. Lett. 85, 2017–2019 (2004) https://doi.org/10.1063/1.1782258

Abstract

View articletitled, Properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Mg</mi><msub><mi mathvariant="normal">B</mi><mn>2</mn></msub></mrow></math> thin films with carbon doping

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Antiferromagnetically coupled $Co Fe B ∕ Ru ∕ Co Fe B$ trilayers

N. Wiese; T. Dimopoulos; M. Rührig; J. Wecker; H. Brückl; G. Reiss

Appl. Phys. Lett. 85, 2020–2022 (2004) https://doi.org/10.1063/1.1792375

Abstract

View articletitled, Antiferromagnetically coupled <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Co</mi><mi mathvariant="normal">Fe</mi><mi mathvariant="normal">B</mi><mo>∕</mo><mi mathvariant="normal">Ru</mi><mo>∕</mo><mi mathvariant="normal">Co</mi><mi mathvariant="normal">Fe</mi><mi mathvariant="normal">B</mi></mrow></math> trilayers

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DIELECTRICS AND FERROELECTRICITY

Ferroelectric hysteresis loops of $(Pb, Ca) Ti O_{3}$ thin films under spherical indentation

M. Algueró; M. L. Calzada; A. J. Bushby; M. J. Reece

Appl. Phys. Lett. 85, 2023–2025 (2004) https://doi.org/10.1063/1.1787594

Abstract

View articletitled, Ferroelectric hysteresis loops of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mrow><mo>(</mo><mi mathvariant="normal">Pb</mi><mo>,</mo><mi mathvariant="normal">Ca</mi><mo>)</mo></mrow><mi mathvariant="normal">Ti</mi><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub></mrow></math> thin films under spherical indentation

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Relaxor and nonlinear behaviors of ${SrTiO}_{3} ∕ {BaTiO}_{3}$ multilayers derived by a sol–gel process

Jiwei Zhai; T. F. Hung; Haydn Chen

Appl. Phys. Lett. 85, 2026–2028 (2004) https://doi.org/10.1063/1.1785857

Abstract

View articletitled, Relaxor and nonlinear behaviors of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mi mathvariant="normal">SrTiO</mi></mrow><mn>3</mn></msub><mo>∕</mo><msub><mrow><mi mathvariant="normal">BaTiO</mi></mrow><mn>3</mn></msub></mrow></math> multilayers derived by a sol–gel process

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$90 ° a - b$ domains in epitaxial ferroelectric ${Bi}_{3.25} {La}_{0.75} {Ti}_{3} O_{12}$ films

Ming-Wen Chu; Sung Kyun Lee; Dietrich Hesse; Ulrich Gösele

Appl. Phys. Lett. 85, 2029–2031 (2004) https://doi.org/10.1063/1.1788879

Abstract

View articletitled, <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>90</mn><mo>°</mo><mi>a</mi><mo>−</mo><mi>b</mi></mrow></math> domains in epitaxial ferroelectric <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mi mathvariant="normal">Bi</mi></mrow><mrow><mn>3.25</mn></mrow></msub><msub><mrow><mi mathvariant="normal">La</mi></mrow><mrow><mn>0.75</mn></mrow></msub><msub><mrow><mi mathvariant="normal">Ti</mi></mrow><mn>3</mn></msub><msub><mi mathvariant="normal">O</mi><mrow><mn>12</mn></mrow></msub></mrow></math> films

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Low voltage switching of a spin cast ferroelectric polymer

R. C. G. Naber; P. W. M. Blom; A. W. Marsman; D. M. de Leeuw

Appl. Phys. Lett. 85, 2032–2034 (2004) https://doi.org/10.1063/1.1788885

Abstract

View articletitled, Low voltage switching of a spin cast ferroelectric polymer

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Three-dimensional heteroepitaxy in self-assembled ${BaTiO}_{3} - {CoFe}_{2} O_{4}$ nanostructures

H. Zheng; J. Wang; L. Mohaddes-Ardabili; M. Wuttig; L. Salamanca-Riba; D. G. Schlom; R. Ramesh

Appl. Phys. Lett. 85, 2035–2037 (2004) https://doi.org/10.1063/1.1786653

Abstract

View articletitled, Three-dimensional heteroepitaxy in self-assembled <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mi mathvariant="normal">BaTiO</mi></mrow><mn>3</mn></msub><mo>–</mo><msub><mrow><mi mathvariant="normal">CoFe</mi></mrow><mn>2</mn></msub><msub><mi mathvariant="normal">O</mi><mn>4</mn></msub></mrow></math> nanostructures

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Effect of ceria doping on random-field-related polarization reversal in strontium barium niobate ceramics

Jyh-Tzong Shiue

Appl. Phys. Lett. 85, 2038–2040 (2004) https://doi.org/10.1063/1.1788886

Abstract

View articletitled, Effect of ceria doping on random-field-related polarization reversal in strontium barium niobate ceramics

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Microwave liquid-crystal variable phase grating

Fuzi Yang; J. R. Sambles

Appl. Phys. Lett. 85, 2041–2043 (2004) https://doi.org/10.1063/1.1787898

Abstract

View articletitled, Microwave liquid-crystal variable phase grating

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Can interface dislocations degrade ferroelectric properties?

S. P. Alpay; I. B. Misirlioglu; V. Nagarajan; R. Ramesh

Appl. Phys. Lett. 85, 2044–2046 (2004) https://doi.org/10.1063/1.1788894

Abstract

View articletitled, Can interface dislocations degrade ferroelectric properties?

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Dielectric properties and space charge behavior in $SiC$ ceramic capacitor

Rui Zhang; Lian Gao; Hailong Wang; Jingkun Guo

Appl. Phys. Lett. 85, 2047–2049 (2004) https://doi.org/10.1063/1.1794866

Abstract

View articletitled, Dielectric properties and space charge behavior in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">SiC</mi></mrow></math> ceramic capacitor

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NANOSCALE SCIENCE AND DESIGN

Electrochemical growth of $Co$ nanodots on patterned $Si$ substrates

M. V. Rastei; R. Meckenstock; J. P. Bucher; E. Devaux; Th. Ebbesen

Appl. Phys. Lett. 85, 2050–2052 (2004) https://doi.org/10.1063/1.1787597

Abstract

View articletitled, Electrochemical growth of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Co</mi></mrow></math> nanodots on patterned <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Si</mi></mrow></math> substrates

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Probing ion transport at the nanoscale: Time-domain electrostatic force spectroscopy on glassy electrolytes

A. Schirmeisen; A. Taskiran; H. Fuchs; B. Roling; S. Murugavel; H. Bracht; F. Natrup

Appl. Phys. Lett. 85, 2053–2055 (2004) https://doi.org/10.1063/1.1790034

Abstract

View articletitled, Probing ion transport at the nanoscale: Time-domain electrostatic force spectroscopy on glassy electrolytes

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Strain-sensitive size modulations in $ZnSe ∕ ZnS$ quantum dots grownon $GaAs$ substrates

Y. G. Kim; Y. S. Joh; J. H. Song; E. D. Sim; K. S. Baek; S. K. Chang; J. I. Lee

Appl. Phys. Lett. 85, 2056–2058 (2004) https://doi.org/10.1063/1.1790035

Abstract

View articletitled, Strain-sensitive size modulations in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">ZnSe</mi><mo>∕</mo><mi mathvariant="normal">ZnS</mi></mrow></math> quantum dots grownon <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">GaAs</mi></mrow></math> substrates

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Evidence of linear lattice expansion and covalency enhancement in rutile $Ti O_{2}$ nanocrystals

Guangshe Li; Juliana Boerio-Goates; Brian F. Woodfield; Liping Li

Appl. Phys. Lett. 85, 2059–2061 (2004) https://doi.org/10.1063/1.1790596

Abstract

View articletitled, Evidence of linear lattice expansion and covalency enhancement in rutile <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>Ti</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></math> nanocrystals

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Dependence of oxide thickness on $O_{2}$ pressure and experimental determination of Gibbs free energies of ultrathin oxide films in vacuum

L. Bouzidi; A. J. Slavin

Appl. Phys. Lett. 85, 2062–2064 (2004) https://doi.org/10.1063/1.1785862

Abstract

View articletitled, Dependence of oxide thickness on <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></math> pressure and experimental determination of Gibbs free energies of ultrathin oxide films in vacuum

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Thermionic emission from defective carbon nanotubes

D. C. Cox; R. D. Forrest; P. R. Smith; S. R. P. Silva

Appl. Phys. Lett. 85, 2065–2067 (2004) https://doi.org/10.1063/1.1790597

Abstract

View articletitled, Thermionic emission from defective carbon nanotubes

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Light-induced instability of PbO-filled single-wall carbon nanotubes

Martin Hulman; Hans Kuzmany; Pedro M. F. J. Costa; Steffi Friedrichs; Malcolm L. H. Green

Appl. Phys. Lett. 85, 2068–2070 (2004) https://doi.org/10.1063/1.1790603

Abstract

View articletitled, Light-induced instability of PbO-filled single-wall carbon nanotubes

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Size- and shape-controlled $GaN$ nanocrystals grown on $Si (111)$ substrate by reactive epitaxy

Chung-Lin Wu; Li-Jen Chou; Shangjr Gwo

Appl. Phys. Lett. 85, 2071–2073 (2004) https://doi.org/10.1063/1.1787947

Abstract

View articletitled, Size- and shape-controlled <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">GaN</mi></mrow></math> nanocrystals grown on <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Si</mi><mo>(</mo><mn>111</mn><mo>)</mo></mrow></math> substrate by reactive epitaxy

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Anomalous change in electron density at nuclear sites in nanosize zinc ferrite

C. Upadhyay; H. C. Verma

Appl. Phys. Lett. 85, 2074–2076 (2004) https://doi.org/10.1063/1.1786368

Abstract

View articletitled, Anomalous change in electron density at nuclear sites in nanosize zinc ferrite

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Defect-free $InP$ nanowires grown in [001] direction on $InP$ (001)

U. Krishnamachari; M. Borgstrom; B. J. Ohlsson; N. Panev; L. Samuelson; W. Seifert; M. W. Larsson; L. R. Wallenberg

Appl. Phys. Lett. 85, 2077–2079 (2004) https://doi.org/10.1063/1.1784548

Abstract

View articletitled, Defect-free <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">InP</mi></mrow></math> nanowires grown in [001] direction on <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">InP</mi></mrow></math> (001)

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Porous nanotubes of ${Co}_{3} O_{4}$ ⁠: Synthesis, characterization, and magnetic properties

R. M. Wang; C. M. Liu; H. Z. Zhang; C. P. Chen; L. Guo; H. B. Xu; S. H. Yang

Appl. Phys. Lett. 85, 2080–2082 (2004) https://doi.org/10.1063/1.1789577

Abstract

View articletitled, Porous nanotubes of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">Co</mi><mn>3</mn></msub><msub><mi mathvariant="normal">O</mi><mn>4</mn></msub></mrow></math>⁠: Synthesis, characterization, and magnetic properties

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Exciton spin relaxation dynamics in $In Ga As ∕ In P$ quantum wells

Shunsuke Akasaka; Shogo Miyata; Takamasa Kuroda; Atsushi Tackeuchi

Appl. Phys. Lett. 85, 2083–2085 (2004) https://doi.org/10.1063/1.1792376

Abstract

View articletitled, Exciton spin relaxation dynamics in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">In</mi><mi mathvariant="normal">Ga</mi><mi mathvariant="normal">As</mi><mo>∕</mo><mi mathvariant="normal">In</mi><mi mathvariant="normal">P</mi></mrow></math> quantum wells

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Comparison of thermal and piezoresistive sensing approaches for atomic force microscopy topography measurements

William P. King; Thomas W. Kenny; Kenneth E. Goodson

Appl. Phys. Lett. 85, 2086–2088 (2004) https://doi.org/10.1063/1.1787160

Abstract

View articletitled, Comparison of thermal and piezoresistive sensing approaches for atomic force microscopy topography measurements

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Photoconductivity from PbS-nanocrystal∕semiconducting polymer composites for solution-processible, quantum-size tunableinfrared photodetectors

S. A. McDonald; P. W. Cyr; L. Levina; E. H. Sargent

Appl. Phys. Lett. 85, 2089–2091 (2004) https://doi.org/10.1063/1.1792380

Abstract

View articletitled, Photoconductivity from PbS-nanocrystal∕semiconducting polymer composites for solution-processible, quantum-size tunableinfrared photodetectors

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DEVICE PHYSICS

Enhancement of organic light-emitting device performances with Hf-doped indium tin oxide anodes

T.-H. Chen; Y. Liou; T. J. Wu; J. Y. Chen

Appl. Phys. Lett. 85, 2092–2094 (2004) https://doi.org/10.1063/1.1790026

Abstract

View articletitled, Enhancement of organic light-emitting device performances with Hf-doped indium tin oxide anodes

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Nanoscale measurements of the absolute temperature from the tunneling of the free electron gas

A. Pavlov

Appl. Phys. Lett. 85, 2095–2097 (2004) https://doi.org/10.1063/1.1786358

Abstract

View articletitled, Nanoscale measurements of the absolute temperature from the tunneling of the free electron gas

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Ambipolar pentacene field-effect transistors with calcium source-drain electrodes

Takeshi Yasuda; Takeshi Goto; Katsuhiko Fujita; Tetsuo Tsutsui

Appl. Phys. Lett. 85, 2098–2100 (2004) https://doi.org/10.1063/1.1794375

Abstract

View articletitled, Ambipolar pentacene field-effect transistors with calcium source-drain electrodes

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Role of hydrogen on negative bias temperature instability in ${HfO}_{2}$ -based hole channel field-effect transistors

M. Houssa; S. De Gendt; J. L. Autran; G. Groeseneken; M. M. Heyns

Appl. Phys. Lett. 85, 2101–2103 (2004) https://doi.org/10.1063/1.1784549

Abstract

View articletitled, Role of hydrogen on negative bias temperature instability in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mi mathvariant="normal">HfO</mi></mrow><mn>2</mn></msub></mrow></math>-based hole channel field-effect transistors

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Time-resolved electroluminescence studies of III-nitride ultraviolet photonic-crystal light-emitting diodes

J. Shakya; J. Y. Lin; H. X. Jiang

Appl. Phys. Lett. 85, 2104–2106 (2004) https://doi.org/10.1063/1.1786372

Abstract

View articletitled, Time-resolved electroluminescence studies of III-nitride ultraviolet photonic-crystal light-emitting diodes

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Microwave SQUID multiplexer

K. D. Irwin; K. W. Lehnert

Appl. Phys. Lett. 85, 2107–2109 (2004) https://doi.org/10.1063/1.1791733

Abstract

View articletitled, Microwave SQUID multiplexer

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High-performance diamond/amorphous silicon $p - n^{+}$ heterojunctions

Y. G. Chen; M. Ogura; M. Kondo; H. Okushi

Appl. Phys. Lett. 85, 2110–2112 (2004) https://doi.org/10.1063/1.1791737

Abstract

View articletitled, High-performance diamond/amorphous silicon <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>p</mi><mtext>-</mtext><msup><mi>n</mi><mo>+</mo></msup></mrow></math> heterojunctions

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High-performance long-wavelength HgCdTe infrared detectors grownon silicon substrates

D. J. Hall; L. Buckle; N. T. Gordon; J. Giess; J. E. Hails; J. W. Cairns; R. M. Lawrence; A. Graham; R. S. Hall; C. Maltby; T. Ashley

Appl. Phys. Lett. 85, 2113–2115 (2004) https://doi.org/10.1063/1.1791740

Abstract

View articletitled, High-performance long-wavelength HgCdTe infrared detectors grownon silicon substrates

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Multilevel conductance and memory in ultrathin organic films

Biswanath Mukherjee; Amlan J. Pal

Appl. Phys. Lett. 85, 2116–2118 (2004) https://doi.org/10.1063/1.1794859

Abstract

View articletitled, Multilevel conductance and memory in ultrathin organic films

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Terahertz plasma wave resonance of two-dimensional electrons in $In Ga P ∕ In Ga As ∕ Ga As$ high-electron-mobility transistors

Taiichi Otsuji; Mitsuhiro Hanabe; Osamu Ogawara

Appl. Phys. Lett. 85, 2119–2121 (2004) https://doi.org/10.1063/1.1792377

Abstract

View articletitled, Terahertz plasma wave resonance of two-dimensional electrons in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">In</mi><mi mathvariant="normal">Ga</mi><mi mathvariant="normal">P</mi><mo>∕</mo><mi mathvariant="normal">In</mi><mi mathvariant="normal">Ga</mi><mi mathvariant="normal">As</mi><mo>∕</mo><mi mathvariant="normal">Ga</mi><mi mathvariant="normal">As</mi></mrow></math> high-electron-mobility transistors

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High-current-density thin-film silicon diodes grown at low temperature

Qi Wang; Scott Ward; Anna Duda; Jian Hu; Paul Stradins; Richard S. Crandall; Howard M. Branz; Craig Perlov; Warren Jackson; Ping Mei; Carl Taussig

Appl. Phys. Lett. 85, 2122–2124 (2004) https://doi.org/10.1063/1.1789580

Abstract

View articletitled, High-current-density thin-film silicon diodes grown at low temperature

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INTERDISCIPLINARY AND GENERAL PHYSICS

Fabrication of three-dimensional photonic crystalsusing silicon micromachining

Sriram Venkataraman; Garrett J. Schneider; Janusz Murakowski; Shouyuan Shi; Dennis W. Prather

Appl. Phys. Lett. 85, 2125–2127 (2004) https://doi.org/10.1063/1.1790594

Abstract

View articletitled, Fabrication of three-dimensional photonic crystalsusing silicon micromachining

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Part-per-million gas detection from long-baseline THz spectroscopy

S. A. Harmon; R. A. Cheville

Appl. Phys. Lett. 85, 2128–2130 (2004) https://doi.org/10.1063/1.1788896

Abstract

View articletitled, Part-per-million gas detection from long-baseline THz spectroscopy

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High-spatial-resolution scanning capacitance microscope using all-metal probe with quartz tuning fork

Yuichi Naitou; Norio Ookubo

Appl. Phys. Lett. 85, 2131–2133 (2004) https://doi.org/10.1063/1.1791342

Abstract

View articletitled, High-spatial-resolution scanning capacitance microscope using all-metal probe with quartz tuning fork

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Aluminum-induced crystallization of amorphous silicon–germanium thin films

M. Gjukic; M. Buschbeck; R. Lechner; M. Stutzmann

Appl. Phys. Lett. 85, 2134–2136 (2004) https://doi.org/10.1063/1.1789245

Abstract

View articletitled, Aluminum-induced crystallization of amorphous silicon–germanium thin films

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Superconducting transition edge sensor using dilute AlMn alloys

S. W. Deiker; W. Doriese; G. C. Hilton; K. D. Irwin; W. H. Rippard; J. N. Ullom; L. R. Vale; S. T. Ruggiero; A. Williams; B. A. Young

Appl. Phys. Lett. 85, 2137–2139 (2004) https://doi.org/10.1063/1.1789575

Abstract

View articletitled, Superconducting transition edge sensor using dilute AlMn alloys

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Microfluidic design rules for capillary slot-based electrospray sources

M. Brinkmann; R. Blossey; S. Arscott; C. Druon; P. Tabourier; S. Le Gac; C. Rolando

Appl. Phys. Lett. 85, 2140–2142 (2004) https://doi.org/10.1063/1.1792381

Abstract

View articletitled, Microfluidic design rules for capillary slot-based electrospray sources

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ERRATA

Erratum∕Apology: Wafer-bonded semiconductors using $In ∕ Sn$ and $Cu ∕ Ti$ metallic interlayers [Appl. Phys. Lett. 84, 3504 (2004)]

Frank Shi; Hao Chen; Scott MacLaren

Appl. Phys. Lett. 85, 2143 (2004) https://doi.org/10.1063/1.1789571

Extract

View articletitled, Erratum∕Apology: Wafer-bonded semiconductors using <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>In</mi><mo>∕</mo><mi mathvariant="normal">Sn</mi></mrow></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Cu</mi><mo>∕</mo><mi mathvariant="normal">Ti</mi></mrow></math> metallic interlayers [Appl. Phys. Lett. 84, 3504 (2004)]

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Erratum: “Analytical solution of the almost-perfect-lens problem” [Appl. Phys. Lett. 84, 1290 (2004)]

R. Merlin

Appl. Phys. Lett. 85, 2144 (2004) https://doi.org/10.1063/1.1789572

Extract

View articletitled, Erratum: “Analytical solution of the almost-perfect-lens problem” [Appl. Phys. Lett. 84, 1290 (2004)]

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Erratum: “Towards ultranarrow bandwidth polymer-based resonant grating waveguide structures” [Appl. Phys. Lett. 84, 472 (2004)]

T. Katchalski; E. Teitelbaum; A. A. Friesem; G. Martin; R. Hierle; J. Zyss

Appl. Phys. Lett. 85, 2145 (2004) https://doi.org/10.1063/1.1792371

Extract

View articletitled, Erratum: “Towards ultranarrow bandwidth polymer-based resonant grating waveguide structures” [Appl. Phys. Lett. 84, 472 (2004)]

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Issues

LASERS, OPTICS, AND OPTOELECTRONICS

PLASMAS AND ELECTRICAL DISCHARGES

STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

ELECTRONIC TRANSPORT AND SEMICONDUCTORS

MAGNETISM AND SUPERCONDUCTIVITY

DIELECTRICS AND FERROELECTRICITY

NANOSCALE SCIENCE AND DESIGN

DEVICE PHYSICS

INTERDISCIPLINARY AND GENERAL PHYSICS

ERRATA

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