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Volume 84, Issue 9

1 March 2004

Applied Physics Letters Cover Image for Volume 84, Issue 9

ISSN 0003-6951

EISSN 1077-3118

In this Issue

LASERS, OPTICS, AND OPTOELECTRONICS
PLASMAS AND ELECTRICAL DISCHARGES
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
ELECTRONIC TRANSPORT AND SEMICONDUCTORS
MAGNETISM AND SUPERCONDUCTIVITY
DIELECTRICS AND FERROELECTRICITY
NANOSCALE SCIENCE AND DESIGN
DEVICE PHYSICS
APPLIED BIOPHYSICS
INTERDISCIPLINARY AND GENERAL PHYSICS
ERRATA

LASERS, OPTICS, AND OPTOELECTRONICS

Nonlinear emission in II–VI pillar microcavities: Strong versus weak coupling

M. Obert; J. Renner; A. Forchel; G. Bacher; R. André; D. Le Si Dang

Appl. Phys. Lett. 84, 1435–1437 (2004) https://doi.org/10.1063/1.1651646

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Enhanced Faraday rotation in all-garnet magneto-optical photonic crystal

S. Kahl; A. M. Grishin

Appl. Phys. Lett. 84, 1438–1440 (2004) https://doi.org/10.1063/1.1651324

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Morphology of femtosecond laser-induced structural changes in bulk transparent materials

Chris B. Schaffer; Alan O. Jamison; Eric Mazur

Appl. Phys. Lett. 84, 1441–1443 (2004) https://doi.org/10.1063/1.1650876

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High-impedance reflectivity and surface-wave band gaps in metamaterials

Lei Zhou; C. T. Chan

Appl. Phys. Lett. 84, 1444–1446 (2004) https://doi.org/10.1063/1.1652236

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$λ∼4–5.3 μ m$ intersubband emission from InGaAs–AlAsSb quantum cascade structures

D. G. Revin; L. R. Wilson; E. A. Zibik; R. P. Green; J. W. Cockburn; M. J. Steer; R. J. Airey; M. Hopkinson

Appl. Phys. Lett. 84, 1447–1449 (2004) https://doi.org/10.1063/1.1655691

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Nonlinear optical properties of an organic film formed of dye aggregates with absorption in the telecommunication wavelength range

Satoshi Tatsuura; Minquan Tian; Makoto Furuki; Yasuhiro Sato; Izumi Iwasa; Hiroyuki Mitsu

Appl. Phys. Lett. 84, 1450–1452 (2004) https://doi.org/10.1063/1.1652234

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Measurement of the effective electron mass in GaInNAs by energy-loss spectroscopy

M. H. Gass; A. J. Papworth; T. B. Joyce; T. J. Bullough; P. R. Chalker

Appl. Phys. Lett. 84, 1453–1455 (2004) https://doi.org/10.1063/1.1650906

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Measurements of charge mobility and diffusion coefficient of conjugated electroluminescent polymers by time-of-flight method

Hao-En Tseng; Tzu-Hao Jen; Kang-Yung Peng; Show-An Chen

Appl. Phys. Lett. 84, 1456–1458 (2004) https://doi.org/10.1063/1.1655700

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Electroluminescence of single silicon nanocrystals

Jan Valenta; Nenad Lalic; Jan Linnros

Appl. Phys. Lett. 84, 1459–1461 (2004) https://doi.org/10.1063/1.1655705

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Optical amplification and electroluminescence at $1.54 μ m$ in Er-doped zinc silicate germanate on silicon

C. C. Baker; J. Heikenfeld; Z. Yu; A. J. Steckl

Appl. Phys. Lett. 84, 1462–1464 (2004) https://doi.org/10.1063/1.1651655

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PLASMAS AND ELECTRICAL DISCHARGES

Vertical alignment liquid crystal cell with optically compensated splay configuration of the liquid crystal

S. H. Lee; S. J. Kim; J. C. Kim

Appl. Phys. Lett. 84, 1465–1467 (2004) https://doi.org/10.1063/1.1652230

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Radio frequency potential of inductive plasma immersed in a weak magnetic field

V. A. Godyak; B. M. Alexandrovich

Appl. Phys. Lett. 84, 1468–1470 (2004) https://doi.org/10.1063/1.1655698

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Phase stability of diamond nanocrystals upon pulsed-laser-induced liquid-solid interfacial reaction: Experiments and ab initio calculations

Cheng-Xin Wang; Yu-Hua Yang; Qiu-Xiang Liu; Guo-Wei Yang; Yu-Liang Mao; Xiao-Hong Yan

Appl. Phys. Lett. 84, 1471–1473 (2004) https://doi.org/10.1063/1.1650917

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Improvement of crystalline silicon surface passivation by hydrogen plasma treatment

I. Martı́n; M. Vetter; A. Orpella; C. Voz; J. Puigdollers; R. Alcubilla; A. V. Kharchenko; P. Roca i Cabarrocas

Appl. Phys. Lett. 84, 1474–1476 (2004) https://doi.org/10.1063/1.1647702

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Broadband emission and low absorption in microdisks with AlGaAs quantum wells

T. Kipp; K. Petter; Ch. Heyn; D. Heitmann; C. Schüller

Appl. Phys. Lett. 84, 1477–1479 (2004) https://doi.org/10.1063/1.1651657

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Mechanism of enhanced luminescence in ${In}_{x} {Al}_{y} {Ga}_{1−x−y} N$ quaternary epilayers

C. H. Chen; Y. F. Chen; Z. H. Lan; L. C. Chen; K. H. Chen; H. X. Jiang; J. Y. Lin

Appl. Phys. Lett. 84, 1480–1482 (2004) https://doi.org/10.1063/1.1650549

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Pulsed-electron-beam deposition of transparent conducting ${SnO}_{2}$ films and study of their properties

R. J. Choudhary; S. B. Ogale; S. R. Shinde; V. N. Kulkarni; T. Venkatesan; K. S. Harshavardhan; M. Strikovski; B. Hannoyer

Appl. Phys. Lett. 84, 1483–1485 (2004) https://doi.org/10.1063/1.1651326

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Influence of layer thickness on the formation of In vacancies in InN grown by molecular beam epitaxy

J. Oila; A. Kemppinen; A. Laakso; K. Saarinen; W. Egger; L. Liszkay; P. Sperr; H. Lu; W. J. Schaff

Appl. Phys. Lett. 84, 1486–1488 (2004) https://doi.org/10.1063/1.1651327

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Epitaxial ${GaN}_{1−y} {As}_{y}$ layers with high As content grown by metalorganic vapor phase epitaxy and their band gap energy

Akitaka Kimura; C. A. Paulson; H. F. Tang; T. F. Kuech

Appl. Phys. Lett. 84, 1489–1491 (2004) https://doi.org/10.1063/1.1652232

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Comparative study of defect energetics in ${HfO}_{2}$ and ${SiO}_{2}$

W. L. Scopel; Antônio J. R. da Silva; W. Orellana; A. Fazzio

Appl. Phys. Lett. 84, 1492–1494 (2004) https://doi.org/10.1063/1.1650874

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Properties of Ir-based Ohmic contacts to AlGaN/GaN high electron mobility transistors

R. C. Fitch; J. K. Gillespie; N. Moser; T. Jenkins; J. Sewell; D. Via; A. Crespo; A. M. Dabiran; P. P. Chow; A. Osinsky; J. R. La Roche; F. Ren; S. J. Pearton

Appl. Phys. Lett. 84, 1495–1497 (2004) https://doi.org/10.1063/1.1651649

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Effect of nitric oxide annealing on the interface trap density near the conduction bandedge of 4H–SiC at the $oxide /(112̄0)$ 4H–SiC interface

S. Dhar; Y. W. Song; L. C. Feldman; T. Isaacs-Smith; C. C. Tin; J. R. Williams; G. Chung; T. Nishimura; D. Starodub; T. Gustafsson; E. Garfunkel

Appl. Phys. Lett. 84, 1498–1500 (2004) https://doi.org/10.1063/1.1651325

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Electrical properties of Pt contacts on $p- GaN$ activated in air

Yow-Jon Lin; Kuo-Chen Wu

Appl. Phys. Lett. 84, 1501–1503 (2004) https://doi.org/10.1063/1.1651658

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Low resistance and transparent Ni–La solid solution/Au ohmic contacts to p-type GaN

June-O Song; Dong-Seok Leem; J. S. Kwak; S. N. Lee; O. H. Nam; Y. Park; Tae-Yeon Seong

Appl. Phys. Lett. 84, 1504–1506 (2004) https://doi.org/10.1063/1.1652238

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Electron scattering in AlGaN/GaN structures

S. Syed; M. J. Manfra; Y. J. Wang; R. J. Molnar; H. L. Stormer

Appl. Phys. Lett. 84, 1507–1509 (2004) https://doi.org/10.1063/1.1655704

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Self-assembled InAsSb quantum dots on (001) InP substrates

Yueming Qiu; David Uhl

Appl. Phys. Lett. 84, 1510–1512 (2004) https://doi.org/10.1063/1.1655690

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Highly-efficient blue electroluminescence based on two emitter isomers

Ying Kan; Liduo Wang; Lian Duan; Yuanchuan Hu; Guoshi Wu; Yong Qiu

Appl. Phys. Lett. 84, 1513–1515 (2004) https://doi.org/10.1063/1.1651653

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MAGNETISM AND SUPERCONDUCTIVITY

Switching current versus magnetoresistance in magnetic multilayer nanopillars

S. Urazhdin; Norman O. Birge; W. P. Pratt, Jr.; J. Bass

Appl. Phys. Lett. 84, 1516–1518 (2004) https://doi.org/10.1063/1.1651645

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Writing and reading bits on pre-patterned media

J. Moritz; L. Buda; B. Dieny; J. P. Nozières; R. J. M. van de Veerdonk; T. M. Crawford; D. Weller

Appl. Phys. Lett. 84, 1519–1521 (2004) https://doi.org/10.1063/1.1644341

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Inhomogeneous magnetization of a superconducting film measured with a gradiometer

H. Stalzer; A. Cosceev; C. Sürgers; H. v. Löhneysen; J.-M. Brosi; G.-A. Chakam; W. Freude

Appl. Phys. Lett. 84, 1522–1524 (2004) https://doi.org/10.1063/1.1655706

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Nanotube magnetism

Y. C. Sui; R. Skomski; K. D. Sorge; D. J. Sellmyer

Appl. Phys. Lett. 84, 1525–1527 (2004) https://doi.org/10.1063/1.1655692

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Effects of magnetic field on the manganite-based bilayer junction

J. R. Sun; C. M. Xiong; T. Y. Zhao; S. Y. Zhang; Y. F. Chen; B. G. Shen

Appl. Phys. Lett. 84, 1528–1530 (2004) https://doi.org/10.1063/1.1664032

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DIELECTRICS AND FERROELECTRICITY

Turnaround of hysterisis for capacitance–voltage characteristics of hafnium oxynitride dielectrics

J. C. Wang; D. C. Shie; T. F. Lei; C. L. Lee

Appl. Phys. Lett. 84, 1531–1533 (2004) https://doi.org/10.1063/1.1644616

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Slow relaxation of field-induced piezoelectric resonance in paraelectric barium stannate titanate

Xiaoyong Wei; Yujun Feng; Xi Yao

Appl. Phys. Lett. 84, 1534–1536 (2004) https://doi.org/10.1063/1.1655694

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Experimental confirmation of negative refractive index of a metamaterial composed of Ω-like metallic patterns

Jiangtao Huangfu; Lixin Ran; Hongsheng Chen; Xian-min Zhang; Kangsheng Chen; Tomasz M. Grzegorczyk; Jin Au Kong

Appl. Phys. Lett. 84, 1537–1539 (2004) https://doi.org/10.1063/1.1655673

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NANOSCALE SCIENCE AND DESIGN

Field emission from gallium-doped zinc oxide nanofiber array

C. X. Xu; X. W. Sun; B. J. Chen

Appl. Phys. Lett. 84, 1540–1542 (2004) https://doi.org/10.1063/1.1651328

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Energy-level splitting of ligand-stabilized ${Au}_{55}$ clusters observed by scanning tunneling spectroscopy

H. Zhang; U. Hartmann; G. Schmid

Appl. Phys. Lett. 84, 1543–1545 (2004) https://doi.org/10.1063/1.1652227

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Synthesis of InN/InP core/sheath nanowires

Long-Wei Yin; Yoshio Bando; Ying-Chun Zhu; Dmitri Golberg; Mu-Sen Li

Appl. Phys. Lett. 84, 1546–1548 (2004) https://doi.org/10.1063/1.1651331

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Resonance Raman scattering of boron carbonitride nanotubes

C. Y. Zhi; X. D. Bai; E. G. Wang

Appl. Phys. Lett. 84, 1549–1551 (2004) https://doi.org/10.1063/1.1652237

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Field emission from vertically aligned conductive ${IrO}_{2}$ nanorods

Reui-San Chen; Ying-Sheng Huang; Ya-Min Liang; Chim-Sung Hsieh; Dah-Shyang Tsai; Kwong-Kau Tiong

Appl. Phys. Lett. 84, 1552–1554 (2004) https://doi.org/10.1063/1.1655703

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A 7-nm nanocolumn structure fabricated by using a ferritin iron-core mask and low-energy Cl neutral beams

Tomohiro Kubota; Tomohiro Baba; Seiji Samukawa; Hiroyuki Kawashima; Yukiharu Uraoka; Takashi Fuyuki; Ichiro Yamashita

Appl. Phys. Lett. 84, 1555–1557 (2004) https://doi.org/10.1063/1.1655701

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Switchable cantilever for a time-of-flight scanning force microscope

DongWeon Lee; Adrian Wetzel; Roland Bennewitz; Ernst Meyer; Michel Despont; Peter Vettiger; Christoph Gerber

Appl. Phys. Lett. 84, 1558–1560 (2004) https://doi.org/10.1063/1.1651641

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Investigation of azobenzene side group orientation in polymer surface relief gratings by means of photoelectron spectroscopy

O. Henneberg; Th. Geue; U. Pietsch; M. Saphiannikova; B. Winter

Appl. Phys. Lett. 84, 1561–1563 (2004) https://doi.org/10.1063/1.1651654

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Phonon confinement in oxide-coated silicon nanowires

Somnath Bhattacharyya; Saumyadip Samui

Appl. Phys. Lett. 84, 1564–1566 (2004) https://doi.org/10.1063/1.1651648

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${}^{2}H$ nuclear magnetic resonance spectroscopy of deuterium adsorption on single-walled carbon nanotubes

Kai Shen; Tanja Pietraß

Appl. Phys. Lett. 84, 1567–1569 (2004) https://doi.org/10.1063/1.1652231

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DEVICE PHYSICS

Anomalous charge transport behavior of Fullerene based diodes

G. J. Matt; N. S. Sariciftci; T. Fromherz

Appl. Phys. Lett. 84, 1570–1572 (2004) https://doi.org/10.1063/1.1651642

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Thin-film field-effect transistors based on La-doped ${SrTiO}_{3}$ heterostructures

Feng Pan; David Olaya; John C. Price; Charles T. Rogers

Appl. Phys. Lett. 84, 1573–1575 (2004) https://doi.org/10.1063/1.1651647

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Electron-beam-induced current observed for dislocations in diffused $4H- SiC$ $P–N$ diodes

S. Maximenko; S. Soloviev; D. Cherednichenko; T. Sudarshan

Appl. Phys. Lett. 84, 1576–1578 (2004) https://doi.org/10.1063/1.1652229

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Bulk-acoustic waves radiated from low-loss surface-acoustic-wave resonators

J. V. Knuuttila; J. J. Vartiainen; J. Koskela; V. P. Plessky; C. S. Hartmann; M. M. Salomaa

Appl. Phys. Lett. 84, 1579–1581 (2004) https://doi.org/10.1063/1.1650557

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Organic thin-film transistors fabricated by microcontact printing

M. Leufgen; A. Lebib; T. Muck; U. Bass; V. Wagner; T. Borzenko; G. Schmidt; J. Geurts; L. W. Molenkamp

Appl. Phys. Lett. 84, 1582–1584 (2004) https://doi.org/10.1063/1.1652233

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Thermal stability of Schottky contacts on strained AlGaN/GaN heterostructures

Zhaojun Lin; Hyeongnam Kim; Jaesun Lee; Wu Lu

Appl. Phys. Lett. 84, 1585–1587 (2004) https://doi.org/10.1063/1.1650875

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Thermal stability of nitrogen incorporated in ${HfN}_{x} O_{y}$ gate dielectrics prepared by reactive sputtering

J. F. Kang; H. Y. Yu; C. Ren; M.-F. Li; D. S. H. Chan; H. Hu; H. F. Lim; W. D. Wang; D. Gui; D.-L. Kwong

Appl. Phys. Lett. 84, 1588–1590 (2004) https://doi.org/10.1063/1.1651652

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AlGaN/GaN polarization-doped field-effect transistor for microwave power applications

Siddharth Rajan; Huili Xing; Steve DenBaars; Umesh K. Mishra; Debdeep Jena

Appl. Phys. Lett. 84, 1591–1593 (2004) https://doi.org/10.1063/1.1652254

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APPLIED BIOPHYSICS

DNA detection on transistor arrays following mutation-specific enzymatic amplification

F. Pouthas; C. Gentil; D. Côte; U. Bockelmann

Appl. Phys. Lett. 84, 1594–1596 (2004) https://doi.org/10.1063/1.1650907

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Ultrasound-modulated optical computed tomography of biological tissues

Jun Li; Lihong V. Wang

Appl. Phys. Lett. 84, 1597–1599 (2004) https://doi.org/10.1063/1.1651330

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INTERDISCIPLINARY AND GENERAL PHYSICS

Microwave radiation force on a parallel-plate resonator

S. Makarov; S. Kulkarni

Appl. Phys. Lett. 84, 1600–1602 (2004) https://doi.org/10.1063/1.1650901

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Physical properties of a single polymeric nanofiber

E. P. S. Tan; C. T. Lim

Appl. Phys. Lett. 84, 1603–1605 (2004) https://doi.org/10.1063/1.1651643

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Ruthenium films by digital chemical vapor deposition: Selectivity, nanostructure, and work function

Sandwip K. Dey; Jaydeb Goswami; Diefeng Gu; Henk de Waard; Steve Marcus; Chris Werkhoven

Appl. Phys. Lett. 84, 1606–1608 (2004) https://doi.org/10.1063/1.1650911

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Correlation between oxidation potential and open-circuit voltage of composite solar cells based on blends of polythiophenes/ fullerene derivative

Abay Gadisa; Mattias Svensson; Mats R. Andersson; Olle Inganäs

Appl. Phys. Lett. 84, 1609–1611 (2004) https://doi.org/10.1063/1.1650878

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ERRATA

Erratum: “Electron-beam-induced segregation in InGaN/GaN multiple-quantum wells” [Appl. Phys. Lett. 83, 1965 (2003)]

J. P. O’Neill; I. M. Ross; A. G. Cullis; T. Wang; P. J. Parbrook

Appl. Phys. Lett. 84, 1612 (2004) https://doi.org/10.1063/1.1650558

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Erratum: “Temperature-dependent optical studies of ${Ti}_{1−x} {Co}_{x} O_{2}$ ” [Appl. Phys. Lett. 83, 3296 (2003)]

S. Guha; K. Ghosh; J. G. Keeth; S. B. Ogale; S. R. Shinde; J. R. Simpson; H. D. Drew; T. Venkatesan

Appl. Phys. Lett. 84, 1613 (2004) https://doi.org/10.1063/1.1647257

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