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Volume 84, Issue 3

19 January 2004

ISSN 0003-6951

EISSN 1077-3118

In this Issue

LASERS, OPTICS, AND OPTOELECTRONICS
PLASMAS AND ELECTRICAL DISCHARGES
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
ELECTRONIC TRANSPORT AND SEMICONDUCTORS
MAGNETISM AND SUPERCONDUCTIVITY
DIELECTRICS AND FERROELECTRICITY
NANOSCALE SCIENCE AND DESIGN
DEVICE PHYSICS
INTERDISCIPLINARY AND GENERAL PHYSICS
ERRATA

LASERS, OPTICS, AND OPTOELECTRONICS

Femtosecond-laser-encoded distributed-feedback color center laser in lithium fluoride single crystals

Ken-ichi Kawamura; Masahiro Hirano; Toshio Kurobori; Daizyu Takamizu; Toshio Kamiya; Hideo Hosono

Appl. Phys. Lett. 84, 311–313 (2004) https://doi.org/10.1063/1.1640784

View articletitled, Femtosecond-laser-encoded distributed-feedback color center laser in lithium fluoride single crystals

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High-temperature, high-power, continuous-wave operation of buried heterostructure quantum-cascade lasers

A. Evans; J. S. Yu; J. David; L. Doris; K. Mi; S. Slivken; M. Razeghi

Appl. Phys. Lett. 84, 314–316 (2004) https://doi.org/10.1063/1.1641174

View articletitled, High-temperature, high-power, continuous-wave operation of buried heterostructure quantum-cascade lasers

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Highly efficient continuous-wave operation at 1030 and 1075 nm wavelengths of LD-pumped ${Yb}^{3+} : Y_{2} O_{3}$ ceramic lasers

Kazunori Takaichi; Hideki Yagi; Jianren Lu; Jean-Francois Bisson; Akira Shirakawa; Ken-ichi Ueda; Takagimi Yanagitani; Alexander A. Kaminskii

Appl. Phys. Lett. 84, 317–319 (2004) https://doi.org/10.1063/1.1641514

View articletitled, Highly efficient continuous-wave operation at 1030 and 1075 nm wavelengths of LD-pumped <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">Yb</mi><mrow><mtext>3+</mtext></mrow></msup><mi xmlns="">:</mi><msub xmlns=""><mi mathvariant="normal">Y</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>3</mn></mrow></msub></math></span> ceramic lasers

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Near-diffraction-limited coherent emission from large aperture antiguided vertical-cavity surface-emitting laser arrays

Ling Bao; Nam-Heon Kim; Luke J. Mawst; N. N. Elkin; V. N. Troshchieva; D. V. Vysotsky; A. P. Napartovich

Appl. Phys. Lett. 84, 320–322 (2004) https://doi.org/10.1063/1.1640799

View articletitled, Near-diffraction-limited coherent emission from large aperture antiguided vertical-cavity surface-emitting laser arrays

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Dynamic array of dark optical traps

Vincent Ricardo Daria; Peter John Rodrigo; Jesper Glückstad

Appl. Phys. Lett. 84, 323–325 (2004) https://doi.org/10.1063/1.1642752

View articletitled, Dynamic array of dark optical traps

Supplementary Material

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Electra: Repetitively pulsed, 500 J, 100 ns, KrF oscillator

M. F. Wolford; F. Hegeler; M. C. Myers; J. L. Giuliani; J. D. Sethian

Appl. Phys. Lett. 84, 326–328 (2004) https://doi.org/10.1063/1.1641513

View articletitled, Electra: Repetitively pulsed, 500 J, 100 ns, KrF oscillator

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Discrete wavelength tunable laser using microelectromechanical systems technology

X. M. Zhang; A. Q. Liu; D. Y. Tang; C. Lu

Appl. Phys. Lett. 84, 329–331 (2004) https://doi.org/10.1063/1.1639130

View articletitled, Discrete wavelength tunable laser using microelectromechanical systems technology

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PLASMAS AND ELECTRICAL DISCHARGES

Hydrogen ion beam generated by a current-free double layer in a helicon plasma

C. Charles

Appl. Phys. Lett. 84, 332–334 (2004) https://doi.org/10.1063/1.1643548

View articletitled, Hydrogen ion beam generated by a current-free double layer in a helicon plasma

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Carrier lifetime in conductive and vanadium-doped 6H-SiC substrates

G. Tamulaitis; I. Yilmaz; M. S. Shur; T. Anderson; R. Gaska

Appl. Phys. Lett. 84, 335–337 (2004) https://doi.org/10.1063/1.1641172

View articletitled, Carrier lifetime in conductive and vanadium-doped 6H-SiC substrates

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Conformal thin-film silicon nitride deposited by hot-wire chemical vapor deposition

Qi Wang; Scott Ward; Lynn Gedvilas; Brian Keyes; Errol Sanchez; Shulin Wang

Appl. Phys. Lett. 84, 338–340 (2004) https://doi.org/10.1063/1.1640803

View articletitled, Conformal thin-film silicon nitride deposited by hot-wire chemical vapor deposition

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Use of deposition pressure to control residual stress in polycrystalline SiC films

Xiao-An Fu; Ronald Jezeski; Christian A. Zorman; Mehran Mehregany

Appl. Phys. Lett. 84, 341–343 (2004) https://doi.org/10.1063/1.1640781

View articletitled, Use of deposition pressure to control residual stress in polycrystalline SiC films

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Stress and structural relaxation in amorphous hydrogenated carbon films

M. Lejeune; M. Benlahsen; R. Bouzerar

Appl. Phys. Lett. 84, 344–346 (2004) https://doi.org/10.1063/1.1637447

View articletitled, Stress and structural relaxation in amorphous hydrogenated carbon films

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Bulk nanostructure formation directly from the multicomponent alloy melt

Jian-Min Li

Appl. Phys. Lett. 84, 347–349 (2004) https://doi.org/10.1063/1.1642756

View articletitled, Bulk nanostructure formation directly from the multicomponent alloy melt

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Roughness and stability of silicon on insulator surfaces

M. Czubanowski; C. Tegenkamp; W. Ernst; H. Pfnür

Appl. Phys. Lett. 84, 350–352 (2004) https://doi.org/10.1063/1.1641181

View articletitled, Roughness and stability of silicon on insulator surfaces

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Enhanced luminescence of ${Gd}_{2} O_{3} : {Eu}^{3+}$ thin-film phosphors by Li doping

Soung-soo Yi; Jong Seong Bae; Kyoo Sung Shim; Jung Hyun Jeong; Jung-Chul Park; P. H. Holloway

Appl. Phys. Lett. 84, 353–355 (2004) https://doi.org/10.1063/1.1641526

View articletitled, Enhanced luminescence of <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Gd</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>3</mn></mrow></msub><mi xmlns="">:</mi><msup xmlns=""><mi mathvariant="normal">Eu</mi><mrow><mtext>3+</mtext></mrow></msup></math></span> thin-film phosphors by Li doping

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Deep ultraviolet scanning near-field optical microscopy for the structural analysis of organic and biological materials

Hiroyuki Aoki; Toyohiro Hamamatsu; Shinzaburo Ito

Appl. Phys. Lett. 84, 356–358 (2004) https://doi.org/10.1063/1.1642757

View articletitled, Deep ultraviolet scanning near-field optical microscopy for the structural analysis of organic and biological materials

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High fluorescence quantum efficiency of $1.8 μ m$ emission in Tm-doped low silica calcium aluminate glass determined by thermal lens spectrometry

S. L. Oliveira; S. M. Lima; T. Catunda; L. A. O. Nunes; J. H. Rohling; A. C. Bento; M. L. Baesso

Appl. Phys. Lett. 84, 359–361 (2004) https://doi.org/10.1063/1.1640782

View articletitled, High fluorescence quantum efficiency of <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">1.8 μ</mtext><mi mathvariant="normal" xmlns="">m</mi></math></span> emission in Tm-doped low silica calcium aluminate glass determined by thermal lens spectrometry

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Layer-by-layer diamond-like woodpile structure with a large photonic band gap

Martin Maldovan; Edwin L. Thomas; Craig W. Carter

Appl. Phys. Lett. 84, 362–364 (2004) https://doi.org/10.1063/1.1642279

View articletitled, Layer-by-layer diamond-like woodpile structure with a large photonic band gap

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Spin-dependent transport in lateral periodic magnetic modulations: Scheme for spin filters

J. Zhou; Q. W. Shi; M. W. Wu

Appl. Phys. Lett. 84, 365–367 (2004) https://doi.org/10.1063/1.1640805

View articletitled, Spin-dependent transport in lateral periodic magnetic modulations: Scheme for spin filters

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Germanium-concentration dependence of arsenic diffusion in silicon germanium alloys

S. Eguchi; C. N. Chleirigh; O. O. Olubuyide; J. L. Hoyt

Appl. Phys. Lett. 84, 368–370 (2004) https://doi.org/10.1063/1.1641169

View articletitled, Germanium-concentration dependence of arsenic diffusion in silicon germanium alloys

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Comparison of stability of ${WSi}_{X} / SiC$ and Ni/SiC Schottky rectifiers to high dose gamma-ray irradiation

Jihyun Kim; F. Ren; G. Y. Chung; M. F. MacMillan; A. G. Baca; R. D. Briggs; D. Schoenfeld; S. J. Pearton

Appl. Phys. Lett. 84, 371–373 (2004) https://doi.org/10.1063/1.1642271

View articletitled, Comparison of stability of <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">WSi</mi><mrow><mi>X</mi></mrow></msub><mi xmlns="">/</mi><mi mathvariant="normal" xmlns="">SiC</mi></math></span> and Ni/SiC Schottky rectifiers to high dose gamma-ray irradiation

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Impact of carbon on trap states in n-type GaN grown by metalorganic chemical vapor deposition

A. Armstrong; A. R. Arehart; B. Moran; S. P. DenBaars; U. K. Mishra; J. S. Speck; S. A. Ringel

Appl. Phys. Lett. 84, 374–376 (2004) https://doi.org/10.1063/1.1643540

View articletitled, Impact of carbon on trap states in <em>n</em>-type GaN grown by metalorganic chemical vapor deposition

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MAGNETISM AND SUPERCONDUCTIVITY

High critical current density and its field dependence in mixed rare earth ${(Nd,Eu,Gd)Ba}_{2} {Cu}_{3} O_{7−δ}$ thin films

C. Cai; B. Holzapfel; J. Hänisch; L. Fernández; L. Schultz

Appl. Phys. Lett. 84, 377–379 (2004) https://doi.org/10.1063/1.1640802

View articletitled, High critical current density and its field dependence in mixed rare earth <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">(Nd,Eu,Gd)Ba</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Cu</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">7−δ</mi></mrow></msub></math></span> thin films

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Switching by point-contact spin injection in a continuous film

T. Y. Chen; Y. Ji; C. L. Chien

Appl. Phys. Lett. 84, 380–382 (2004) https://doi.org/10.1063/1.1641170

View articletitled, Switching by point-contact spin injection in a continuous film

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Interfacial disorder in the ${L1}_{}$ FePt particles capped with amorphous ${Al}_{2} O_{3}$

Y. K. Takahashi; K. Hono

Appl. Phys. Lett. 84, 383–385 (2004) https://doi.org/10.1063/1.1641175

View articletitled, Interfacial disorder in the <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mtext>L1</mtext><mrow><mn></mn></mrow></msub></math></span> FePt particles capped with amorphous <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>3</mn></mrow></msub></math></span>

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Crystalline reconstruction in Ni–Cr–Fe/Ni–Fe films

Tsann Lin; Daniele Mauri; Brian York; Philip M. Rice

Appl. Phys. Lett. 84, 386–388 (2004) https://doi.org/10.1063/1.1640804

View articletitled, Crystalline reconstruction in Ni–Cr–Fe/Ni–Fe films

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DIELECTRICS AND FERROELECTRICITY

Charge trapping studies on ultrathin ${ZrO}_{2}$ and ${HfO}_{2}$ high-k dielectrics grown by room temperature ultraviolet ozone oxidation

Shriram Ramanathan; Paul C. McIntyre; Supratik Guha; Evgeni Gusev

Appl. Phys. Lett. 84, 389–391 (2004) https://doi.org/10.1063/1.1636532

View articletitled, Charge trapping studies on ultrathin <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">ZrO</mi><mrow><mn>2</mn></mrow></msub></math></span> and <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">HfO</mi><mrow><mn>2</mn></mrow></msub></math></span> high-<em>k</em> dielectrics grown by room temperature ultraviolet ozone oxidation

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Controlled inflation of voids in cellular polymer ferroelectrets: Optimizing electromechanical transducer properties

M. Wegener; W. Wirges; R. Gerhard-Multhaupt; M. Dansachmüller; R. Schwödiauer; S. Bauer-Gogonea; S. Bauer; M. Paajanen; H. Minkkinen; J. Raukola

Appl. Phys. Lett. 84, 392–394 (2004) https://doi.org/10.1063/1.1641171

View articletitled, Controlled inflation of voids in cellular polymer ferroelectrets: Optimizing electromechanical transducer properties

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Photovoltaic effect of lead lanthanum zirconate titanate in a layered film structure design

M. Ichiki; R. Maeda; Y. Morikawa; Y. Mabune; T. Nakada; K. Nonaka

Appl. Phys. Lett. 84, 395–397 (2004) https://doi.org/10.1063/1.1641528

View articletitled, Photovoltaic effect of lead lanthanum zirconate titanate in a layered film structure design

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Pulsed deposition of metal–oxide thin films using dual metal precursors

J. F. Conley, Jr.; Y. Ono; D. J. Tweet; R. Solanki

Appl. Phys. Lett. 84, 398–400 (2004) https://doi.org/10.1063/1.1643545

View articletitled, Pulsed deposition of metal–oxide thin films using dual metal precursors

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NANOSCALE SCIENCE AND DESIGN

Self-assembly of one-dimensional molecular nanostructures on the Ge-covered Si(100) surface

Y. P. Zhang; L. Yang; Y. H. Lai; G. Q. Xu; X. S. Wang

Appl. Phys. Lett. 84, 401–403 (2004) https://doi.org/10.1063/1.1641180

View articletitled, Self-assembly of one-dimensional molecular nanostructures on the Ge-covered Si(100) surface

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Composite nanogranular films of FePt-MgO with (001) orientation onto glass substrates

K. Kang; Z. G. Zhang; C. Papusoi; T. Suzuki

Appl. Phys. Lett. 84, 404–406 (2004) https://doi.org/10.1063/1.1641168

View articletitled, Composite nanogranular films of FePt-MgO with (001) orientation onto glass substrates

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Gold nanowires from silicon nanowire templates

T. C. Wong; C. P. Li; R. Q. Zhang; S. T. Lee

Appl. Phys. Lett. 84, 407–409 (2004) https://doi.org/10.1063/1.1641179

View articletitled, Gold nanowires from silicon nanowire templates

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Circuit with small-capacitance high-quality Nb Josephson junctions

Michio Watanabe; Yasunobu Nakamura; Jaw-Shen Tsai

Appl. Phys. Lett. 84, 410–412 (2004) https://doi.org/10.1063/1.1640798

View articletitled, Circuit with small-capacitance high-quality Nb Josephson junctions

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Correlation of field emission and surface microstructure of vertically aligned carbon nanotubes

S. H. Jo; Y. Tu; Z. P. Huang; D. L. Carnahan; J. Y. Huang; D. Z. Wang; Z. F. Ren

Appl. Phys. Lett. 84, 413–415 (2004) https://doi.org/10.1063/1.1642272

View articletitled, Correlation of field emission and surface microstructure of vertically aligned carbon nanotubes

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The vibrational properties of one-dimensional ZnO:Ce nanostructures

Baochang Cheng; Yanhe Xiao; Guosheng Wu; Lide Zhang

Appl. Phys. Lett. 84, 416–418 (2004) https://doi.org/10.1063/1.1639131

View articletitled, The vibrational properties of one-dimensional ZnO:Ce nanostructures

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DEVICE PHYSICS

Low-noise photon counting with a radio-frequency quantum-dot field-effect transistor

B. E. Kardynał; A. J. Shields; N. S. Beattie; I. Farrer; K. Cooper; D. A. Ritchie

Appl. Phys. Lett. 84, 419–421 (2004) https://doi.org/10.1063/1.1639936

View articletitled, Low-noise photon counting with a radio-frequency quantum-dot field-effect transistor

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Dynamics of trapped charge in GaN/AlGaN/GaN high electron mobility transistors grown by plasma-assisted molecular beam epitaxy

Oleg Mitrofanov; Michael Manfra

Appl. Phys. Lett. 84, 422–424 (2004) https://doi.org/10.1063/1.1638878

View articletitled, Dynamics of trapped charge in GaN/AlGaN/GaN high electron mobility transistors grown by plasma-assisted molecular beam epitaxy

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Buffer-layer-induced barrier reduction: Role of tunneling in organic light-emitting devices

S. T. Zhang; X. M. Ding; J. M. Zhao; H. Z. Shi; J. He; Z. H. Xiong; H. J. Ding; E. G. Obbard; Y. Q. Zhan; W. Huang; X. Y. Hou

Appl. Phys. Lett. 84, 425–427 (2004) https://doi.org/10.1063/1.1641166

View articletitled, Buffer-layer-induced barrier reduction: Role of tunneling in organic light-emitting devices

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Light emission from a polymer transistor

Marcus Ahles; Aline Hepp; Roland Schmechel; Heinz von Seggern

Appl. Phys. Lett. 84, 428–430 (2004) https://doi.org/10.1063/1.1640800

View articletitled, Light emission from a polymer transistor

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$C_{60}$ as a Faraday cage

P. Delaney; J. C. Greer

Appl. Phys. Lett. 84, 431–433 (2004) https://doi.org/10.1063/1.1640783

View articletitled, <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">C</mi><mrow><mn>60</mn></mrow></msub></math></span> as a Faraday cage

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Depletion-mode InGaAs metal-oxide-semiconductor field-effect transistor with oxide gate dielectric grown by atomic-layer deposition

P. D. Ye; G. D. Wilk; B. Yang; J. Kwo; H.-J. L. Gossmann; M. Hong; K. K. Ng; J. Bude

Appl. Phys. Lett. 84, 434–436 (2004) https://doi.org/10.1063/1.1641527

View articletitled, Depletion-mode InGaAs metal-oxide-semiconductor field-effect transistor with oxide gate dielectric grown by atomic-layer deposition

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InAs/InAsP composite channels for antimonide-based field-effect transistors

H.-K. Lin; C. Kadow; M. Dahlström; J.-U. Bae; M. J. W. Rodwell; A. C. Gossard; B. Brar; G. Sullivan; G. Nagy; J. Bergman

Appl. Phys. Lett. 84, 437–439 (2004) https://doi.org/10.1063/1.1642275

View articletitled, InAs/InAsP composite channels for antimonide-based field-effect transistors

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Electric field-assisted bipolar charge spouting in organic thin-film diodes

Tetsuo Tsutsui; Masaya Terai

Appl. Phys. Lett. 84, 440–442 (2004) https://doi.org/10.1063/1.1640470

View articletitled, Electric field-assisted bipolar charge spouting in organic thin-film diodes

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Temperature-dependent contact resistances in high-quality polymer field-effect transistors

B. H. Hamadani; D. Natelson

Appl. Phys. Lett. 84, 443–445 (2004) https://doi.org/10.1063/1.1639945

View articletitled, Temperature-dependent contact resistances in high-quality polymer field-effect transistors

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INTERDISCIPLINARY AND GENERAL PHYSICS

Effective broadband detection of nanometer laser-induced ultrasonic surface displacements by CdTe:V adaptive photoelectromotive force detector

S. Stepanov; P. Rodrı́guez; S. Trivedi; C.-C. Wang

Appl. Phys. Lett. 84, 446–448 (2004) https://doi.org/10.1063/1.1640466

View articletitled, Effective broadband detection of nanometer laser-induced ultrasonic surface displacements by CdTe:V adaptive photoelectromotive force detector

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Compositional mapping of surfaces in atomic force microscopy by excitation of the second normal mode of the microcantilever

Tomás R. Rodrı́guez; Ricardo Garcı́a

Appl. Phys. Lett. 84, 449–451 (2004) https://doi.org/10.1063/1.1642273

View articletitled, Compositional mapping of surfaces in atomic force microscopy by excitation of the second normal mode of the microcantilever

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ERRATA

Publisher’s Note: “Single-crystalline InN films with an absorption edge between 0.7 and 2 eV grown using different techniques and evidence of the actual band gap energy” [Appl. Phys. Lett. 83, 4788 (2003)]

Ashraful Ghani Bhuiyan; Kenichi Sugita; Ken Kasashima; Akihiro Hashimoto; Akio Yamamoto; Valery Yu. Davydov

Appl. Phys. Lett. 84, 452 (2004) https://doi.org/10.1063/1.1644578

View articletitled, Publisher’s Note: “Single-crystalline InN films with an absorption edge between 0.7 and 2 eV grown using different techniques and evidence of the actual band gap energy” [Appl. Phys. Lett. <strong>83</strong>, 4788 (2003)]

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