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Volume 84, Issue 20

17 May 2004

ISSN 0003-6951

EISSN 1077-3118

In this Issue

DIELECTRICS AND FERROELECTRICITY
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
NANOSCALE SCIENCE AND DESIGN
INTERDISCIPLINARY AND GENERAL PHYSICS
DEVICE PHYSICS
LASERS, OPTICS, AND OPTOELECTRONICS
ELECTRONIC TRANSPORT AND SEMICONDUCTORS
MAGNETISM AND SUPERCONDUCTIVITY

DIELECTRICS AND FERROELECTRICITY

Atomic layer deposition of lanthanum aluminum oxide nano-laminates for electrical applications

Booyong S. Lim; Antti Rahtu; Philippe de Rouffignac; Roy G. Gordon

Appl. Phys. Lett. 84, 3957–3959 (2004) https://doi.org/10.1063/1.1739272

View articletitled, Atomic layer deposition of lanthanum aluminum oxide nano-laminates for electrical applications

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Dual structures in $(1−x) Pb ({Zn}_{1/3} {Nb}_{2/3}) O_{3} −x {PbTiO}_{3}$ ferroelectric relaxors

Guangyong Xu; H. Hiraka; G. Shirane; K. Ohwada

Appl. Phys. Lett. 84, 3975–3977 (2004) https://doi.org/10.1063/1.1751216

View articletitled, Dual structures in <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">(1−x)</mtext><mi mathvariant="normal" xmlns="">Pb</mi><mi xmlns="">(</mi><msub xmlns=""><mi mathvariant="normal">Zn</mi><mrow><mtext>1/3</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Nb</mi><mrow><mtext>2/3</mtext></mrow></msub><mi xmlns="">)</mi><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>3</mn></mrow></msub><mi xmlns="">−x</mi><msub xmlns=""><mi mathvariant="normal">PbTiO</mi><mrow><mn>3</mn></mrow></msub></math></span> ferroelectric relaxors

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Direct-write method for domain inversion patterns in ${LiNbO}_{3}$

V. Dierolf; C. Sandmann

Appl. Phys. Lett. 84, 3987–3989 (2004) https://doi.org/10.1063/1.1753057

View articletitled, Direct-write method for domain inversion patterns in <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">LiNbO</mi><mrow><mn>3</mn></mrow></msub></math></span>

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Self-assembled monolayer resist for atomic layer deposition of ${HfO}_{2}$ and ${ZrO}_{2}$ high-κ gate dielectrics

Rong Chen; Hyoungsub Kim; Paul C. McIntyre; Stacey F. Bent

Appl. Phys. Lett. 84, 4017–4019 (2004) https://doi.org/10.1063/1.1751211

View articletitled, Self-assembled monolayer resist for atomic layer deposition of <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">HfO</mi><mrow><mn>2</mn></mrow></msub></math></span> and <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">ZrO</mi><mrow><mn>2</mn></mrow></msub></math></span> high-κ gate dielectrics

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Reduction of leakage current by Co doping in ${Pt/Ba}_{0.5} {Sr}_{0.5} {TiO}_{3} / {Nb–SrTiO}_{3}$ capacitor

S. Y. Wang; B. L. Cheng; Can Wang; S. Y. Dai; H. B. Lu; Y. L. Zhou; Z. H. Chen; G. Z. Yang

Appl. Phys. Lett. 84, 4116–4118 (2004) https://doi.org/10.1063/1.1755421

View articletitled, Reduction of leakage current by Co doping in <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Pt/Ba</mi><mrow><mtext>0.5</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Sr</mi><mrow><mtext>0.5</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">TiO</mi><mrow><mn>3</mn></mrow></msub><mi xmlns="">/</mi><msub xmlns=""><mi mathvariant="normal">Nb–SrTiO</mi><mrow><mn>3</mn></mrow></msub></math></span> capacitor

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Characterization of hafnium aluminate gate dielectrics deposited by liquid injection metalorganic chemical vapor deposition

R. J. Potter; P. A. Marshall; P. R. Chalker; S. Taylor; A. C. Jones; T. C. Q. Noakes; P. Bailey

Appl. Phys. Lett. 84, 4119–4121 (2004) https://doi.org/10.1063/1.1755424

View articletitled, Characterization of hafnium aluminate gate dielectrics deposited by liquid injection metalorganic chemical vapor deposition

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Reflectivity behavior of opals of gold nanoparticle coated spheres

P. T. Miclea; A. S. Susha; Z. Liang; F. Caruso; C. M. Sotomayor Torres; S. G. Romanov

Appl. Phys. Lett. 84, 3960–3962 (2004) https://doi.org/10.1063/1.1739512

View articletitled, Reflectivity behavior of opals of gold nanoparticle coated spheres

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Selectable-frequency and tunable-Q perfect transmissions of electromagnetic waves in dielectric heterostructures

Z. Wang; R. W. Peng; F. Qiu; X. Q. Huang; Mu Wang; A. Hu; S. S. Jiang; D. Feng

Appl. Phys. Lett. 84, 3969–3971 (2004) https://doi.org/10.1063/1.1748848

View articletitled, Selectable-frequency and tunable-<em>Q</em> perfect transmissions of electromagnetic waves in dielectric heterostructures

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GaInAs/GaAs quantum-well growth assisted by Sb surfactant: Toward $1.3 μ m$ emission

J. C. Harmand; L. H. Li; G. Patriarche; L. Travers

Appl. Phys. Lett. 84, 3981–3983 (2004) https://doi.org/10.1063/1.1751221

View articletitled, GaInAs/GaAs quantum-well growth assisted by Sb surfactant: Toward <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">1.3 μ</mtext><mi mathvariant="normal" xmlns="">m</mi></math></span> emission

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Electric-field-induced dynamics in radial liquid crystal droplets studied by multiphoton-excited fluorescence microscopy

Aifang Xie; Daniel A. Higgins

Appl. Phys. Lett. 84, 4014–4016 (2004) https://doi.org/10.1063/1.1748846

View articletitled, Electric-field-induced dynamics in radial liquid crystal droplets studied by multiphoton-excited fluorescence microscopy

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Bulk metallic glass formation in the binary Cu–Zr system

D. Wang; Y. Li; B. B. Sun; M. L. Sui; K. Lu; E. Ma

Appl. Phys. Lett. 84, 4029–4031 (2004) https://doi.org/10.1063/1.1751219

View articletitled, Bulk metallic glass formation in the binary Cu–Zr system

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Formation chemistry of high-density nanocraters on the surface of sapphire substrates with an in situ etching and growth mechanism of device-quality GaN films on the etched substrates

M. Hao; H. Ishikawa; T. Egawa

Appl. Phys. Lett. 84, 4041–4043 (2004) https://doi.org/10.1063/1.1751607

View articletitled, Formation chemistry of high-density nanocraters on the surface of sapphire substrates with an <em>in situ</em> etching and growth mechanism of device-quality GaN films on the etched substrates

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Femtosecond-laser-activated fluorescence from silver oxide nanoparticles

T. Gleitsmann; B. Stegemann; T. M. Bernhardt

Appl. Phys. Lett. 84, 4050–4052 (2004) https://doi.org/10.1063/1.1751613

View articletitled, Femtosecond-laser-activated fluorescence from silver oxide nanoparticles

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Thermophysical properties of a highly superheated and undercooled Ni–Si alloy melt

H. P. Wang; C. D. Cao; B. Wei

Appl. Phys. Lett. 84, 4062–4064 (2004) https://doi.org/10.1063/1.1751618

View articletitled, Thermophysical properties of a highly superheated and undercooled Ni–Si alloy melt

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Nonuniform twin-boundary motion in Ni–Mn–Ga single crystals

Miguel A. Marioni; Samuel M. Allen; Robert C. O’Handley

Appl. Phys. Lett. 84, 4071–4073 (2004) https://doi.org/10.1063/1.1751621

View articletitled, Nonuniform twin-boundary motion in Ni–Mn–Ga single crystals

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Raman characterization of 0.4 nm single-wall carbon nanotubes using the full-symmetry line group

Z. M. Li; Z. K. Tang; G. G. Siu; I. Bozovic

Appl. Phys. Lett. 84, 4101–4103 (2004) https://doi.org/10.1063/1.1753066

View articletitled, Raman characterization of 0.4 nm single-wall carbon nanotubes using the full-symmetry line group

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Thermal stability of epitaxial ${SrRuO}_{3}$ films as a function of oxygen pressure

Ho Nyung Lee; Hans M. Christen; Matthew F. Chisholm; Christopher M. Rouleau; Douglas H. Lowndes

Appl. Phys. Lett. 84, 4107–4109 (2004) https://doi.org/10.1063/1.1753650

View articletitled, Thermal stability of epitaxial <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SrRuO</mi><mrow><mn>3</mn></mrow></msub></math></span> films as a function of oxygen pressure

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NANOSCALE SCIENCE AND DESIGN

Optical near-field mapping of excitons and biexcitons in naturally occurring semiconductor quantum dots

Ulrich Hohenester; Guido Goldoni; Elisa Molinari

Appl. Phys. Lett. 84, 3963–3965 (2004) https://doi.org/10.1063/1.1741033

View articletitled, Optical near-field mapping of excitons and biexcitons in naturally occurring semiconductor quantum dots

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Four-probe charge transport measurements on individual vertically aligned carbon nanofibers

Lan Zhang; Derek Austin; Vladimir I. Merkulov; Anatoli V. Meleshko; Kate L. Klein; Michael A. Guillorn; Douglas H. Lowndes; Michael L. Simpson

Appl. Phys. Lett. 84, 3972–3974 (2004) https://doi.org/10.1063/1.1748849

View articletitled, Four-probe charge transport measurements on individual vertically aligned carbon nanofibers

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In situ detection of faradaic current in probe oxidation using a dynamic force microscope

Hiromi Kuramochi; Kazunori Ando; Takashi Tokizaki; Hiroshi Yokoyama

Appl. Phys. Lett. 84, 4005–4007 (2004) https://doi.org/10.1063/1.1748842

View articletitled, <em>In situ</em> detection of faradaic current in probe oxidation using a dynamic force microscope

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Interaction of vapor-deposited Ti and Au with molecular wires

A. V. Walker; T. B. Tighe; J. Stapleton; B. C. Haynie; S. Upilli; D. L. Allara; N. Winograd

Appl. Phys. Lett. 84, 4008–4010 (2004) https://doi.org/10.1063/1.1748844

View articletitled, Interaction of vapor-deposited Ti and Au with molecular wires

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Multi-excitonic complexes in single InGaN quantum dots

R. Seguin; S. Rodt; A. Strittmatter; L. Reißmann; T. Bartel; A. Hoffmann; D. Bimberg; E. Hahn; D. Gerthsen

Appl. Phys. Lett. 84, 4023–4025 (2004) https://doi.org/10.1063/1.1751214

View articletitled, Multi-excitonic complexes in single InGaN quantum dots

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Excimer laser nanostructuring of nickel thin films for the catalytic growth of carbon nanotubes

S. J. Henley; C. H. P. Poa; A. A. D. T. Adikaari; C. E. Giusca; J. D. Carey; S. R. P. Silva

Appl. Phys. Lett. 84, 4035–4037 (2004) https://doi.org/10.1063/1.1751226

View articletitled, Excimer laser nanostructuring of nickel thin films for the catalytic growth of carbon nanotubes

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Self-assembled magnetic nanostripes by organic patterning

X. Ma; H. L. Meyerheim; J. Barthel; J. Kirschner; S. Schmitt; E. Umbach

Appl. Phys. Lett. 84, 4038–4040 (2004) https://doi.org/10.1063/1.1751228

View articletitled, Self-assembled magnetic nanostripes by organic patterning

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Coulomb blockade in a silicon/silicon–germanium two-dimensional electron gas quantum dot

L. J. Klein; K. A. Slinker; J. L. Truitt; S. Goswami; K. L. M. Lewis; S. N. Coppersmith; D. W. van der Weide; Mark Friesen; R. H. Blick; D. E. Savage; M. G. Lagally; Charlie Tahan; Robert Joynt; M. A. Eriksson; J. O. Chu; J. A. Ott; P. M. Mooney

Appl. Phys. Lett. 84, 4047–4049 (2004) https://doi.org/10.1063/1.1751612

View articletitled, Coulomb blockade in a silicon/silicon–germanium two-dimensional electron gas quantum dot

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Strong quantum-confinement effects in the conduction band of germanium nanocrystals

C. Bostedt; T. van Buuren; T. M. Willey; N. Franco; L. J. Terminello; C. Heske; T. Möller

Appl. Phys. Lett. 84, 4056–4058 (2004) https://doi.org/10.1063/1.1751616

View articletitled, Strong quantum-confinement effects in the conduction band of germanium nanocrystals

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Bistable nanoelectromechanical devices

Kirk J. Ziegler; Daniel M. Lyons; Justin D. Holmes; Donats Erts; Boris Polyakov; Håkan Olin; Krister Svensson; Eva Olsson

Appl. Phys. Lett. 84, 4074–4076 (2004) https://doi.org/10.1063/1.1751622

View articletitled, Bistable nanoelectromechanical devices

Supplementary Material

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Initial growth of vertically aligned carbon nanofibers

Hongtao Cui; Xiaojing Yang; Michael L. Simpson; Douglas H. Lowndes; Maria Varela

Appl. Phys. Lett. 84, 4077–4079 (2004) https://doi.org/10.1063/1.1751624

View articletitled, Initial growth of vertically aligned carbon nanofibers

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Effects of the one-dimensional quantum barriers in pyramidal quantum dots

F. Michelini; M.-A. Dupertuis; E. Kapon

Appl. Phys. Lett. 84, 4086–4088 (2004) https://doi.org/10.1063/1.1753054

View articletitled, Effects of the one-dimensional quantum barriers in pyramidal quantum dots

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SU-8 for real three-dimensional subdiffraction-limit two-photon microfabrication

W. H. Teh; U. Dürig; G. Salis; R. Harbers; U. Drechsler; R. F. Mahrt; C. G. Smith; H.-J. Güntherodt

Appl. Phys. Lett. 84, 4095–4097 (2004) https://doi.org/10.1063/1.1753059

View articletitled, SU-8 for real three-dimensional subdiffraction-limit two-photon microfabrication

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Formation of highly aligned ZnO tubes on sapphire (0001) substrates

B. P. Zhang; N. T. Binh; K. Wakatsuki; Y. Segawa; Y. Yamada; N. Usami; M. Kawasaki; H. Koinuma

Appl. Phys. Lett. 84, 4098–4100 (2004) https://doi.org/10.1063/1.1753061

View articletitled, Formation of highly aligned ZnO tubes on sapphire (0001) substrates

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Hydrogen adsorption and desorption by potassium-doped superactivated carbon

Yoshitsugu Kojima; Nobuaki Suzuki

Appl. Phys. Lett. 84, 4113–4115 (2004) https://doi.org/10.1063/1.1753654

View articletitled, Hydrogen adsorption and desorption by potassium-doped superactivated carbon

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INTERDISCIPLINARY AND GENERAL PHYSICS

Methodology for optimizing viewing characteristics of top-emitting organic light-emitting devices

Chung-Chih Wu; Chun-Liang Lin; Ping-Yuan Hsieh; Huo-Hsien Chiang

Appl. Phys. Lett. 84, 3966–3968 (2004) https://doi.org/10.1063/1.1745107

View articletitled, Methodology for optimizing viewing characteristics of top-emitting organic light-emitting devices

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Thermionic and tunneling cooling thermodynamics

Hui Tong Chua; Xiaolin Wang; Jeffrey M. Gordon

Appl. Phys. Lett. 84, 3999–4001 (2004) https://doi.org/10.1063/1.1738939

View articletitled, Thermionic and tunneling cooling thermodynamics

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DEVICE PHYSICS

Organic-metal-semiconductor transistor with high gain

M. S. Meruvia; I. A. Hümmelgen; M. L. Sartorelli; A. A. Pasa; W. Schwarzacher

Appl. Phys. Lett. 84, 3978–3980 (2004) https://doi.org/10.1063/1.1751218

View articletitled, Organic-metal-semiconductor transistor with high gain

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Conducting fluorocarbon coatings for organic light-emitting diodes

S. W. Tong; C. S. Lee; Y. Lifshitz; D. Q. Gao; S. T. Lee

Appl. Phys. Lett. 84, 4032–4034 (2004) https://doi.org/10.1063/1.1751220

View articletitled, Conducting fluorocarbon coatings for organic light-emitting diodes

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All-optical switching due to state filling in quantum dots

R. Prasanth; J. E. M. Haverkort; A. Deepthy; E. W. Bogaart; J. J. G. M. van der Tol; E. A. Patent; G. Zhao; Q. Gong; P. J. van Veldhoven; R. Nötzel; J. H. Wolter

Appl. Phys. Lett. 84, 4059–4061 (2004) https://doi.org/10.1063/1.1751617

View articletitled, All-optical switching due to state filling in quantum dots

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Persistent photocurrent and surface trapping in GaN Schottky ultraviolet detectors

O. Katz; G. Bahir; J. Salzman

Appl. Phys. Lett. 84, 4092–4094 (2004) https://doi.org/10.1063/1.1753056

View articletitled, Persistent photocurrent and surface trapping in GaN Schottky ultraviolet detectors

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LASERS, OPTICS, AND OPTOELECTRONICS

Coherent control of intersubband optical bistability in quantum wells

H. O. Wijewardane; C. A. Ullrich

Appl. Phys. Lett. 84, 3984–3986 (2004) https://doi.org/10.1063/1.1751611

View articletitled, Coherent control of intersubband optical bistability in quantum wells

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Low-loss fiber accessible plasmon waveguide for planar energy guiding and sensing

Stefan A. Maier; Paul E. Barclay; Thomas J. Johnson; Michelle D. Friedman; Oskar Painter

Appl. Phys. Lett. 84, 3990–3992 (2004) https://doi.org/10.1063/1.1753060

View articletitled, Low-loss fiber accessible plasmon waveguide for planar energy guiding and sensing

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Low-loss GaInNAs saturable absorber mode locking a $1.3-μ m$ solid-state laser

V. Liverini; S. Schön; R. Grange; M. Haiml; S. C. Zeller; U. Keller

Appl. Phys. Lett. 84, 4002–4004 (2004) https://doi.org/10.1063/1.1748841

View articletitled, Low-loss GaInNAs saturable absorber mode locking a <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">1.3-μ</mtext><mi mathvariant="normal" xmlns="">m</mi></math></span> solid-state laser

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Measurement of guided light-mode intensity: An alternative waveguide sensing principle

Róbert Horváth; Nina Skivesen; Henrik C. Pedersen

Appl. Phys. Lett. 84, 4044–4046 (2004) https://doi.org/10.1063/1.1751610

View articletitled, Measurement of guided light-mode intensity: An alternative waveguide sensing principle

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Terahertz quantum-well photodetector

H. C. Liu; C. Y. Song; A. J. SpringThorpe; J. C. Cao

Appl. Phys. Lett. 84, 4068–4070 (2004) https://doi.org/10.1063/1.1751620

View articletitled, Terahertz quantum-well photodetector

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Longitudinal compression of short laser pulses in air

I. Alexeev; A. Ting; D. F. Gordon; E. Briscoe; J. R. Penano; R. F. Hubbard; P. Sprangle

Appl. Phys. Lett. 84, 4080–4082 (2004) https://doi.org/10.1063/1.1753051

View articletitled, Longitudinal compression of short laser pulses in air

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High contrast polymer-dispersed liquid crystal in a $90°$ twisted cell

Yi-Hsin Lin; Hongwen Ren; Shin-Tson Wu

Appl. Phys. Lett. 84, 4083–4085 (2004) https://doi.org/10.1063/1.1753052

View articletitled, High contrast polymer-dispersed liquid crystal in a <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">90°</mtext></math></span> twisted cell

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An InGaN-based horizontal-cavity surface-emitting laser diode

Tetsuya Akasaka; Toshio Nishida; Toshiki Makimoto; Naoki Kobayashi

Appl. Phys. Lett. 84, 4104–4106 (2004) https://doi.org/10.1063/1.1753068

View articletitled, An InGaN-based horizontal-cavity surface-emitting laser diode

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Influence of relative wafer rotation on the electrical properties of the bonded SiC/SiC interface

G. N. Yushin; Z. Sitar

Appl. Phys. Lett. 84, 3993–3995 (2004) https://doi.org/10.1063/1.1753065

View articletitled, Influence of relative wafer rotation on the electrical properties of the bonded SiC/SiC interface

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Metal/Al-doped ZnO ohmic contact for AlGaN/GaN high electron mobility transistor

K. Nishizono; M. Okada; M. Kamei; D. Kikuta; K. Tominaga; Y. Ohno; J. P. Ao

Appl. Phys. Lett. 84, 3996–3998 (2004) https://doi.org/10.1063/1.1738175

View articletitled, Metal/Al-doped ZnO ohmic contact for AlGaN/GaN high electron mobility transistor

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Study of the temperature-dependent interaction of 4H–SiC and 6H–SiC surfaces with atomic hydrogen

Maria Losurdo; Giovanni Bruno; April Brown; Tong-Ho Kim

Appl. Phys. Lett. 84, 4011–4013 (2004) https://doi.org/10.1063/1.1748845

View articletitled, Study of the temperature-dependent interaction of 4H–SiC and 6H–SiC surfaces with atomic hydrogen

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Analysis of plasma treatment and vapor heat treatment for thin-film transistors by extracting trap densities at front and back interfaces

Mutsumi Kimura; Daisuke Abe; Satoshi Inoue; Tatsuya Shimoda; Simon W.-B. Tam

Appl. Phys. Lett. 84, 4026–4028 (2004) https://doi.org/10.1063/1.1751215

View articletitled, Analysis of plasma treatment and vapor heat treatment for thin-film transistors by extracting trap densities at front and back interfaces

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Influence of misfit dislocations on the electrical properties of CdTe layers grown by molecular beam epitaxy on InSb

G. M. Khattak; G. W. Matthews; C. G. Scott; M. Yousaf

Appl. Phys. Lett. 84, 4053–4055 (2004) https://doi.org/10.1063/1.1751615

View articletitled, Influence of misfit dislocations on the electrical properties of CdTe layers grown by molecular beam epitaxy on InSb

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Temporal variation in photoluminescence from single InGaN quantum dots

James H. Rice; James W. Robinson; Anas Jarjour; Robert A. Taylor; Rachel A. Oliver; G. Andrew D. Briggs; Menno J. Kappers; Colin J. Humphreys

Appl. Phys. Lett. 84, 4110–4112 (2004) https://doi.org/10.1063/1.1753653

View articletitled, Temporal variation in photoluminescence from single InGaN quantum dots

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MAGNETISM AND SUPERCONDUCTIVITY

Superconductivity in La-doped strontium titanate thin films

David Olaya; Feng Pan; Charles T. Rogers; Jonn C. Price

Appl. Phys. Lett. 84, 4020–4022 (2004) https://doi.org/10.1063/1.1751213

View articletitled, Superconductivity in La-doped strontium titanate thin films

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Surface effects in Mn $L_{3,2}$ x-ray absorption spectra from (Ga,Mn)As

K. W. Edmonds; N. R. S. Farley; R. P. Campion; C. T. Foxon; B. L. Gallagher; T. K. Johal; G. van der Laan; M. MacKenzie; J. N. Chapman; E. Arenholz

Appl. Phys. Lett. 84, 4065–4067 (2004) https://doi.org/10.1063/1.1751619

View articletitled, Surface effects in Mn <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi>L</mi><mrow><mtext>3,2</mtext></mrow></msub></math></span> x-ray absorption spectra from (Ga,Mn)As

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The normal-state resistivity of grain boundaries in ${YBa}_{2} {Cu}_{3} O_{7−δ}$

J. H. T. Ransley; S. H. Mennema; K. G. Sandeman; G. Burnell; E. J. Tarte; J. E. Evetts; M. G. Blamire; J. I. Kye; B. Oh

Appl. Phys. Lett. 84, 4089–4091 (2004) https://doi.org/10.1063/1.1753055

View articletitled, The normal-state resistivity of grain boundaries in <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">YBa</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Cu</mi><mrow><mn>3</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mtext>7−δ</mtext></mrow></msub></math></span>

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Special topic on Wide- and ultrawide-bandgap electronic semiconductor devices

Joachim Würfl, Tomás Palacios, et al.

Roadmap on photonic metasurfaces

Sebastian A. Schulz, Rupert. F. Oulton, et al.

Feedback cooling of an insulating high-Q diamagnetically levitated plate

S. Tian, K. Jadeja, et al.

Online ISSN 1077-3118
Print ISSN 0003-6951

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