Skip Nav Destination

Issues

Select Decade

Select Year

Issue

DEVICE PHYSICS

20 μm cutoff heterojunction interfacial work function internal photoemission detectors

S. G. Matsik; M. B. M. Rinzan; D. G. Esaev; A. G. U. Perera; H. C. Liu; M. Buchanan

Appl. Phys. Lett. 84, 3435–3437 (2004) https://doi.org/10.1063/1.1634386

Abstract

View articletitled, 20 μm cutoff heterojunction interfacial work function internal photoemission detectors

Open the PDF for in another window

p-type behavior in phosphorus-doped (Zn,Mg)O device structures

Y. W. Heo; Y. W. Kwon; Y. Li; S. J. Pearton; D. P. Norton

Appl. Phys. Lett. 84, 3474–3476 (2004) https://doi.org/10.1063/1.1737795

Abstract

View articletitled, p-type behavior in phosphorus-doped (Zn,Mg)O device structures

Open the PDF for in another window

High efficiency low operating voltage polymer light-emitting diodes with aluminum cathode

X. Y. Deng; W. M. Lau; K. Y. Wong; K. H. Low; H. F. Chow; Y. Cao

Appl. Phys. Lett. 84, 3522–3524 (2004) https://doi.org/10.1063/1.1739510

Abstract

View articletitled, High efficiency low operating voltage polymer light-emitting diodes with aluminum cathode

Open the PDF for in another window

Device deformation during low-frequency pulsed operation of high-power diode bars

Axel Gerhardt; Fritz Weik; Tien QuocTran; Jens W. Tomm; Thomas Elsaesser; Jens Biesenbach; Holger Müntz; Gabriele Seibold; Mark L. Biermann

Appl. Phys. Lett. 84, 3525–3527 (2004) https://doi.org/10.1063/1.1739516

Abstract

View articletitled, Device deformation during low-frequency pulsed operation of high-power diode bars

Open the PDF for in another window

Fundamental limits to detection of low-energy ions using silicon solid-state detectors

H. O. Funsten; S. M. Ritzau; R. W. Harper; R. Korde

Appl. Phys. Lett. 84, 3552–3554 (2004) https://doi.org/10.1063/1.1719272

Abstract

View articletitled, Fundamental limits to detection of low-energy ions using silicon solid-state detectors

Open the PDF for in another window

Patterning-free integration of polymer light-emitting diode and polymer transistor

Z. L. Li; S. C. Yang; H. F. Meng; Y. S. Chen; Y. Z. Yang; C. H. Liu; S. F. Horng; C. S. Hsu; L. C. Chen; J. P. Hu; R. H. Lee

Appl. Phys. Lett. 84, 3558–3560 (2004) https://doi.org/10.1063/1.1728301

Abstract

View articletitled, Patterning-free integration of polymer light-emitting diode and polymer transistor

Open the PDF for in another window

1 micron wavelength photo- and electroluminescence from a conjugated polymer

Miaoxiang Chen; Erik Perzon; Mats R. Andersson; Saulius Marcinkevicius; S. K. M. Jönsson; Mats Fahlman; Magnus Berggren

Appl. Phys. Lett. 84, 3570–3572 (2004) https://doi.org/10.1063/1.1737064

Abstract

View articletitled, 1 micron wavelength photo- and electroluminescence from a conjugated polymer

Open the PDF for in another window

Highly sensitive ac nanocalorimeter for microliter-scale liquids or biological samples

J.-L. Garden; E. Château; J. Chaussy

Appl. Phys. Lett. 84, 3597–3599 (2004) https://doi.org/10.1063/1.1737794

Abstract

View articletitled, Highly sensitive ac nanocalorimeter for microliter-scale liquids or biological samples

Open the PDF for in another window

Double-transconductance-plateau characteristics in InGaAs/GaAs real-space transfer high-electron-mobility transistor

Ching-Sung Lee; Wei-Chou Hsu

Appl. Phys. Lett. 84, 3618–3620 (2004) https://doi.org/10.1063/1.1738512

Abstract

View articletitled, Double-transconductance-plateau characteristics in InGaAs/GaAs real-space transfer high-electron-mobility transistor

Open the PDF for in another window

Visible light-emitting diodes using a-plane GaN–InGaN multiple quantum wells over r-plane sapphire

Ashay Chitnis; Changqing Chen; Vinod Adivarahan; Maxim Shatalov; Edmundas Kuokstis; Vasavi Mandavilli; Jinwei Yang; M. Asif Khan

Appl. Phys. Lett. 84, 3663–3665 (2004) https://doi.org/10.1063/1.1738938

Abstract

View articletitled, Visible light-emitting diodes using a-plane GaN–InGaN multiple quantum wells over r-plane sapphire

Open the PDF for in another window

High performance of potassium $n$ -doped carbon nanotube field-effect transistors

M. Radosavljević; J. Appenzeller; Ph. Avouris; J. Knoch

Appl. Phys. Lett. 84, 3693–3695 (2004) https://doi.org/10.1063/1.1737062

Abstract

View articletitled, High performance of potassium <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">n</mi></math>-doped carbon nanotube field-effect transistors

Open the PDF for in another window

APPLIED BIOPHYSICS

Optical attenuation signatures of Bacillus subtillis in the THz region

E. R. Brown; J. E. Bjarnason; T. L. J. Chan; A. W. M. Lee; M. A. Celis

Appl. Phys. Lett. 84, 3438–3440 (2004) https://doi.org/10.1063/1.1711167

Abstract

View articletitled, Optical attenuation signatures of Bacillus subtillis in the THz region

Open the PDF for in another window

NANOSCALE SCIENCE AND DESIGN

Synthesis of uniform GaN quantum dot arrays via electron nanolithography of $D_{2} {GaN}_{3}$

P. A. Crozier; J. Tolle; J. Kouvetakis; Cole Ritter

Appl. Phys. Lett. 84, 3441–3443 (2004) https://doi.org/10.1063/1.1736314

Abstract

View articletitled, Synthesis of uniform GaN quantum dot arrays via electron nanolithography of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">D</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">GaN</mi><mrow><mn>3</mn></mrow></msub></math>

Open the PDF for in another window

Luminescence from processible quantum dot-polymer light emitters 1100–1600 nm: Tailoring spectral width and shape

L. Bakueva; G. Konstantatos; L. Levina; S. Musikhin; E. H. Sargent

Appl. Phys. Lett. 84, 3459–3461 (2004) https://doi.org/10.1063/1.1737072

Abstract

View articletitled, Luminescence from processible quantum dot-polymer light emitters 1100–1600 nm: Tailoring spectral width and shape

Open the PDF for in another window

Electronic structure of ZnO nanorods studied by angle-dependent x-ray absorption spectroscopy and scanning photoelectron microscopy

J. W. Chiou; J. C. Jan; H. M. Tsai; C. W. Bao; W. F. Pong; M.-H. Tsai; I.-H. Hong; R. Klauser; J. F. Lee; J. J. Wu; S. C. Liu

Appl. Phys. Lett. 84, 3462–3464 (2004) https://doi.org/10.1063/1.1737075

Abstract

View articletitled, Electronic structure of ZnO nanorods studied by angle-dependent x-ray absorption spectroscopy and scanning photoelectron microscopy

Open the PDF for in another window

Self-assembled hexagonal Au particle networks on silicon from Au nanoparticle solution

P. Y. Su; J. C. Hu; S. L. Cheng; L. J. Chen; J. M. Liang

Appl. Phys. Lett. 84, 3480–3482 (2004) https://doi.org/10.1063/1.1737797

Abstract

View articletitled, Self-assembled hexagonal Au particle networks on silicon from Au nanoparticle solution

Open the PDF for in another window

Blueshift of yellow luminescence band in self-ion-implanted $n- GaN$ nanowire

S. Dhara; A. Datta; C. T. Wu; Z. H. Lan; K. H. Chen; Y. L. Wang; Y. F. Chen; C. W. Hsu; L. C. Chen; H. M. Lin; C. C. Chen

Appl. Phys. Lett. 84, 3486–3488 (2004) https://doi.org/10.1063/1.1738172

Abstract

View articletitled, Blueshift of yellow luminescence band in self-ion-implanted <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">n-</mi><mi mathvariant="normal" xmlns="">GaN</mi></math> nanowire

Open the PDF for in another window

Direct printing of nanoparticles and spin-on-glasses by offset liquid embossing

Eric J. Wilhelm; Joseph M. Jacobson

Appl. Phys. Lett. 84, 3507–3509 (2004) https://doi.org/10.1063/1.1738942

Abstract

View articletitled, Direct printing of nanoparticles and spin-on-glasses by offset liquid embossing

Open the PDF for in another window

Formation mechanism of wide stacking faults in nanocrystalline Al

X. Z. Liao; S. G. Srinivasan; Y. H. Zhao; M. I. Baskes; Y. T. Zhu; F. Zhou; E. J. Lavernia; H. F. Xu

Appl. Phys. Lett. 84, 3564–3566 (2004) https://doi.org/10.1063/1.1734689

Abstract

View articletitled, Formation mechanism of wide stacking faults in nanocrystalline Al

Open the PDF for in another window

ZnO nanoneedles with tip surface perturbations: Excellent field emitters

Y. B. Li; Y. Bando; D. Golberg

Appl. Phys. Lett. 84, 3603–3605 (2004) https://doi.org/10.1063/1.1738174

Abstract

View articletitled, ZnO nanoneedles with tip surface perturbations: Excellent field emitters

Open the PDF for in another window

Heteroepitaxal fabrication and structural characterizations of ultrafine GaN/ZnO coaxial nanorod heterostructures

Sung Jin An; Won Il Park; Gyu-Chul Yi; Yong-Jin Kim; Hee-Bok Kang; Miyoung Kim

Appl. Phys. Lett. 84, 3612–3614 (2004) https://doi.org/10.1063/1.1738180

Abstract

View articletitled, Heteroepitaxal fabrication and structural characterizations of ultrafine GaN/ZnO coaxial nanorod heterostructures

Open the PDF for in another window

Field-emission properties of quasi-one-dimensional ${NbO}_{x}$ crystals

Marko Žumer; Vincenc Nemanič; Bojan Zajec; Maja Remškar; Aleš Mrzel; Dragan Mihailovič

Appl. Phys. Lett. 84, 3615–3617 (2004) https://doi.org/10.1063/1.1738511

Abstract

View articletitled, Field-emission properties of quasi-one-dimensional <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">NbO</mi><mrow><mi>x</mi></mrow></msub></math> crystals

Open the PDF for in another window

Experimental test of the correction terms for Coulomb blockade thermometry

Surita Devi; Tobias Bergsten; Per Delsing

Appl. Phys. Lett. 84, 3633–3635 (2004) https://doi.org/10.1063/1.1738519

Abstract

View articletitled, Experimental test of the correction terms for Coulomb blockade thermometry

Open the PDF for in another window

Light-modulated scanning tunneling spectroscopy for nanoscale imaging of surface photovoltage

Osamu Takeuchi; Shoji Yoshida; Hidemi Shigekawa

Appl. Phys. Lett. 84, 3645–3647 (2004) https://doi.org/10.1063/1.1737063

Abstract

View articletitled, Light-modulated scanning tunneling spectroscopy for nanoscale imaging of surface photovoltage

Open the PDF for in another window

First principle study of core/shell structure quantum dots

Jingbo Li; Lin-Wang Wang

Appl. Phys. Lett. 84, 3648–3650 (2004) https://doi.org/10.1063/1.1737470

Abstract

View articletitled, First principle study of core/shell structure quantum dots

Open the PDF for in another window

Fabrication and ethanol sensing characteristics of ZnO nanowire gas sensors

In Special Collection: APL Classic Papers

Q. Wan; Q. H. Li; Y. J. Chen; T. H. Wang; X. L. He; J. P. Li; C. L. Lin

Appl. Phys. Lett. 84, 3654–3656 (2004) https://doi.org/10.1063/1.1738932

Abstract

View articletitled, Fabrication and ethanol sensing characteristics of ZnO nanowire gas sensors

Open the PDF for in another window

Metal-coated Si springs: Nanoelectromechanical actuators

J. P. Singh; D.-L. Liu; D.-X. Ye; R. C. Picu; T.-M. Lu; G.-C. Wang

Appl. Phys. Lett. 84, 3657–3659 (2004) https://doi.org/10.1063/1.1738935

Abstract

View articletitled, Metal-coated Si springs: Nanoelectromechanical actuators

Open the PDF for in another window

Electron energy-loss spectroscopy analysis of the electronic structure of nitrided Hf silicate films

Nobuyuki Ikarashi; Makoto Miyamura; Koji Masuzaki; Toru Tatsumi

Appl. Phys. Lett. 84, 3672–3674 (2004) https://doi.org/10.1063/1.1738948

Abstract

View articletitled, Electron energy-loss spectroscopy analysis of the electronic structure of nitrided Hf silicate films

Open the PDF for in another window

STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

One-dimensional ordered structure of α-sexithienyl on Cu(110)

Manabu Kiguchi; Shiro Entani; Koichiro Saiki; Genki Yoshikawa

Appl. Phys. Lett. 84, 3444–3446 (2004) https://doi.org/10.1063/1.1736315

Abstract

View articletitled, One-dimensional ordered structure of α-sexithienyl on Cu(110)

Open the PDF for in another window

Photoreflectance investigations of oscillator strength and broadening of optical transitions for GaAsSb–GaInAs/GaAs bilayer quantum wells

R. Kudrawiec; G. Se̢k; K. Ryczko; J. Misiewicz; J. C. Harmand

Appl. Phys. Lett. 84, 3453–3455 (2004) https://doi.org/10.1063/1.1737065

Abstract

View articletitled, Photoreflectance investigations of oscillator strength and broadening of optical transitions for GaAsSb–GaInAs/GaAs bilayer quantum wells

Open the PDF for in another window

Local built-in potential on grain boundary of ${Cu(In,Ga)Se}_{2}$ thin films

C.-S. Jiang; R. Noufi; J. A. AbuShama; K. Ramanathan; H. R. Moutinho; J. Pankow; M. M. Al-Jassim

Appl. Phys. Lett. 84, 3477–3479 (2004) https://doi.org/10.1063/1.1737796

Abstract

View articletitled, Local built-in potential on grain boundary of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Cu(In,Ga)Se</mi><mrow><mn>2</mn></mrow></msub></math> thin films

Open the PDF for in another window

Near-bandedge cathodoluminescence of an AlN homoepitaxial film

E. Silveira; J. A. Freitas, Jr.; M. Kneissl; D. W. Treat; N. M. Johnson; G. A. Slack; L. J. Schowalter

Appl. Phys. Lett. 84, 3501–3503 (2004) https://doi.org/10.1063/1.1738929

Abstract

View articletitled, Near-bandedge cathodoluminescence of an AlN homoepitaxial film

Open the PDF for in another window

Wafer-bonded semiconductors using In/Sn and Cu/Ti metallic interlayers

Frank Shi; Hao Chen; Scott MacLaren

Appl. Phys. Lett. 84, 3504–3506 (2004) https://doi.org/10.1063/1.1738933

Abstract

View articletitled, Wafer-bonded semiconductors using In/Sn and Cu/Ti metallic interlayers

Open the PDF for in another window

Epitaxial growth of ${Al}_{x} {Ga}_{1−x} N$ on Si(111) via a ${ZrB}_{2} (0001)$ buffer layer

John Tolle; John Kouvetakis; Dae-Woo Kim; S. Mahajan; A. Bell; Fernando A. Ponce; I. S. T. Tsong; Michael L. Kottke; Zhihao D. Chen

Appl. Phys. Lett. 84, 3510–3512 (2004) https://doi.org/10.1063/1.1738944

Abstract

View articletitled, Epitaxial growth of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>1−x</mtext></mrow></msub><mi mathvariant="normal" xmlns="">N</mi></math> on Si(111) via a <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">ZrB</mi><mrow><mn>2</mn></mrow></msub><mtext xmlns="">(0001)</mtext></math> buffer layer

Open the PDF for in another window

Depth-resolving structural analysis of GaN layers by skew angle x-ray diffraction

A. Reiher; J. Bläsing; A. Dadgar; A. Krost

Appl. Phys. Lett. 84, 3537–3539 (2004) https://doi.org/10.1063/1.1704870

Abstract

View articletitled, Depth-resolving structural analysis of GaN layers by skew angle x-ray diffraction

Open the PDF for in another window

Optical characterization of n- and p-doped 4H–SiC by electroreflectance spectroscopy

Gazi Demir; Timothy E. Renfro; R. Glosser; S. E. Saddow

Appl. Phys. Lett. 84, 3540–3542 (2004) https://doi.org/10.1063/1.1712037

Abstract

View articletitled, Optical characterization of n- and p-doped 4H–SiC by electroreflectance spectroscopy

Open the PDF for in another window

Influence of Pt addition on the texture of NiSi on Si(001)

C. Detavernier; C. Lavoie

Appl. Phys. Lett. 84, 3549–3551 (2004) https://doi.org/10.1063/1.1719276

Abstract

View articletitled, Influence of Pt addition on the texture of NiSi on Si(001)

Open the PDF for in another window

Nondestructive depth profile of the chemical state of ultrathin ${Al}_{2} O_{3} / Si$ interface

Jong Cheol Lee; S.-J. Oh

Appl. Phys. Lett. 84, 3561–3563 (2004) https://doi.org/10.1063/1.1734684

Abstract

View articletitled, Nondestructive depth profile of the chemical state of ultrathin <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>3</mn></mrow></msub><mi xmlns="">/</mi><mi mathvariant="normal" xmlns="">Si</mi></math> interface

Open the PDF for in another window

Avoiding cracks in self-assembled photonic band-gap crystals

A. A. Chabanov; Y. Jun; D. J. Norris

Appl. Phys. Lett. 84, 3573–3575 (2004) https://doi.org/10.1063/1.1737066

Abstract

View articletitled, Avoiding cracks in self-assembled photonic band-gap crystals

Open the PDF for in another window

Screened-exchange determination of the optical properties of large gap insulators: ${CaF}_{2}$

Miyoung Kim; Yu-Jun Zhao; A. J. Freeman; W. Mannstadt

Appl. Phys. Lett. 84, 3579–3581 (2004) https://doi.org/10.1063/1.1737073

Abstract

View articletitled, Screened-exchange determination of the optical properties of large gap insulators: <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CaF</mi><mrow><mn>2</mn></mrow></msub></math>

Open the PDF for in another window

Ion beam-induced anisotropic plastic deformation of silicon microstructures

T. van Dillen; M. J. A. de Dood; J. J. Penninkhof; A. Polman; S. Roorda; A. M. Vredenberg

Appl. Phys. Lett. 84, 3591–3593 (2004) https://doi.org/10.1063/1.1737480

Abstract

View articletitled, Ion beam-induced anisotropic plastic deformation of silicon microstructures

Open the PDF for in another window

Magnetic field-controlled two-way shape memory in CoNiGa single crystals

Y. X. Li; H. Y. Liu; F. B. Meng; L. Q. Yan; G. D. Liu; X. F. Dai; M. Zhang; Z. H. Liu; J. L. Chen; G. H. Wu

Appl. Phys. Lett. 84, 3594–3596 (2004) https://doi.org/10.1063/1.1737481

Abstract

View articletitled, Magnetic field-controlled two-way shape memory in CoNiGa single crystals

Open the PDF for in another window

A widely tunable refractive index in a nanolayered photonic material

Marie Sandrock; Michael Wiggins; James S. Shirk; Huiwen Tai; Aditya Ranade; Eric Baer; Anne Hiltner

Appl. Phys. Lett. 84, 3621–3623 (2004) https://doi.org/10.1063/1.1738513

Abstract

View articletitled, A widely tunable refractive index in a nanolayered photonic material

Open the PDF for in another window

Deformation potentials of the $E_{1} (TO)$ and $E_{2}$ modes of InN

V. Darakchieva; P. P. Paskov; E. Valcheva; T. Paskova; B. Monemar; M. Schubert; H. Lu; W. J. Schaff

Appl. Phys. Lett. 84, 3636–3638 (2004) https://doi.org/10.1063/1.1738520

Abstract

View articletitled, Deformation potentials of the <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi>E</mi><mrow><mn>1</mn></mrow></msub><mi xmlns="">(</mi><mi mathvariant="normal" xmlns="">TO</mi><mi xmlns="">)</mi></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi>E</mi><mrow><mn>2</mn></mrow></msub></math> modes of InN

Open the PDF for in another window

Mg–Ni–H films as selective coatings: Tunable reflectance by layered hydrogenation

J. L. M. van Mechelen; B. Noheda; W. Lohstroh; R. J. Westerwaal; J. H. Rector; B. Dam; R. Griessen

Appl. Phys. Lett. 84, 3651–3653 (2004) https://doi.org/10.1063/1.1739520

Abstract

View articletitled, Mg–Ni–H films as selective coatings: Tunable reflectance by layered hydrogenation

Open the PDF for in another window

Highly processable bulk metallic glass-forming alloys in the Pt–Co–Ni–Cu–P system

Jan Schroers; William L. Johnson

Appl. Phys. Lett. 84, 3666–3668 (2004) https://doi.org/10.1063/1.1738945

Abstract

View articletitled, Highly processable bulk metallic glass-forming alloys in the Pt–Co–Ni–Cu–P system

Open the PDF for in another window

Growth kinetics of N-face polarity GaN by plasma-assisted molecular-beam epitaxy

E. Monroy; E. Sarigiannidou; F. Fossard; N. Gogneau; E. Bellet-Amalric; J.-L. Rouvière; S. Monnoye; H. Mank; B. Daudin

Appl. Phys. Lett. 84, 3684–3686 (2004) https://doi.org/10.1063/1.1739511

Abstract

View articletitled, Growth kinetics of N-face polarity GaN by plasma-assisted molecular-beam epitaxy

Open the PDF for in another window

ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Impact of dislocations on minority carrier electron and hole lifetimes in GaAs grown on metamorphic SiGe substrates

C. L. Andre; J. J. Boeckl; D. M. Wilt; A. J. Pitera; M. L. Lee; E. A. Fitzgerald; B. M. Keyes; S. A. Ringel

Appl. Phys. Lett. 84, 3447–3449 (2004) https://doi.org/10.1063/1.1736318

Abstract

View articletitled, Impact of dislocations on minority carrier electron and hole lifetimes in GaAs grown on metamorphic SiGe substrates

Open the PDF for in another window

High doping incorporation on (311)B InP/InGaAs by metalorganic chemical vapor deposition and its application to tunnel junction fabrication

Yae L. Okuno; Steven P. DenBaars; John E. Bowers

Appl. Phys. Lett. 84, 3483–3485 (2004) https://doi.org/10.1063/1.1737798

Abstract

View articletitled, High doping incorporation on (311)B InP/InGaAs by metalorganic chemical vapor deposition and its application to tunnel junction fabrication

Open the PDF for in another window

Very high spin polarization in GaAs by injection from a (Ga,Mn)As Zener diode

P. Van Dorpe; Z. Liu; W. Van Roy; V. F. Motsnyi; M. Sawicki; G. Borghs; J. De Boeck

Appl. Phys. Lett. 84, 3495–3497 (2004) https://doi.org/10.1063/1.1738515

Abstract

View articletitled, Very high spin polarization in GaAs by injection from a (Ga,Mn)As Zener diode

Open the PDF for in another window

Suppressing of optical quenching of deep defect-to-band transitions in AlGaN and GaN/AlGaN heterostructures

H. Witte; E. Schrenk; K. Flügge; A. Krtschil; M. Lisker; A. Krost; J. Christen; B. Kuhn; F. Scholz

Appl. Phys. Lett. 84, 3498–3500 (2004) https://doi.org/10.1063/1.1738517

Abstract

View articletitled, Suppressing of optical quenching of deep defect-to-band transitions in AlGaN and GaN/AlGaN heterostructures

Open the PDF for in another window

Growth and properties of molecular beam epitaxially grown ferromagnetic Fe-doped ${TiO}_{2}$ rutile films on ${TiO}_{2} (110)$

Y. J. Kim; S. Thevuthasan; T. Droubay; A. S. Lea; C. M. Wang; V. Shutthanandan; S. A. Chambers; R. P. Sears; B. Taylor; B. Sinkovic

Appl. Phys. Lett. 84, 3531–3533 (2004) https://doi.org/10.1063/1.1703845

Abstract

View articletitled, Growth and properties of molecular beam epitaxially grown ferromagnetic Fe-doped <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">TiO</mi><mrow><mn>2</mn></mrow></msub></math> rutile films on <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">TiO</mi><mrow><mn>2</mn></mrow></msub><mtext xmlns="">(110)</mtext></math>

Open the PDF for in another window

Sb-mediated growth of Si-doped AlGaAs by molecular-beam epitaxy

Yu. G. Sadofyev; S. R. Johnson; S. A. Chaparro; Y. Cao; D. Ding; J.-B. Wang; K. Franzreb; Y.-H. Zhang

Appl. Phys. Lett. 84, 3546–3548 (2004) https://doi.org/10.1063/1.1715153

Abstract

View articletitled, Sb-mediated growth of Si-doped AlGaAs by molecular-beam epitaxy

Open the PDF for in another window

Room-temperature operation of an electrically driven terahertz modulator

T. Kleine-Ostmann; P. Dawson; K. Pierz; G. Hein; M. Koch

Appl. Phys. Lett. 84, 3555–3557 (2004) https://doi.org/10.1063/1.1723689

Abstract

View articletitled, Room-temperature operation of an electrically driven terahertz modulator

Open the PDF for in another window

Spin relaxation dynamics in highly uniform InAs quantum dots

A. Tackeuchi; R. Ohtsubo; K. Yamaguchi; M. Murayama; T. Kitamura; T. Kuroda; T. Takagahara

Appl. Phys. Lett. 84, 3576–3578 (2004) https://doi.org/10.1063/1.1737068

Abstract

View articletitled, Spin relaxation dynamics in highly uniform InAs quantum dots

Open the PDF for in another window

High-germanium-content SiGe islands formed on compliant oxide by SiGe oxidation

Haizhou Yin; K. D. Hobart; F. J. Kub; S. R. Shieh; T. S. Duffy; J. C. Sturm

Appl. Phys. Lett. 84, 3624–3626 (2004) https://doi.org/10.1063/1.1738514

Abstract

View articletitled, High-germanium-content SiGe islands formed on compliant oxide by SiGe oxidation

Open the PDF for in another window

High-frequency small-signal conductivity of hot electrons in nitride semiconductors

V. N. Sokolov; K. W. Kim; V. A. Kochelap; D. L. Woolard

Appl. Phys. Lett. 84, 3630–3632 (2004) https://doi.org/10.1063/1.1738518

Abstract

View articletitled, High-frequency small-signal conductivity of hot electrons in nitride semiconductors

Open the PDF for in another window

Formation of CdSe quantum dots on homoepitaxial ZnSe

S. Sadofev; S. Blumstengel; F. Henneberger

Appl. Phys. Lett. 84, 3678–3680 (2004) https://doi.org/10.1063/1.1739273

Abstract

View articletitled, Formation of CdSe quantum dots on homoepitaxial ZnSe

Open the PDF for in another window

Field-induced nonequilibrium electron distribution and electron transport in a high-quality InN thin film grown on GaN

W. Liang; K. T. Tsen; D. K. Ferry; Hai Lu; William J. Schaff

Appl. Phys. Lett. 84, 3681–3683 (2004) https://doi.org/10.1063/1.1739509

Abstract

View articletitled, Field-induced nonequilibrium electron distribution and electron transport in a high-quality InN thin film grown on GaN

Open the PDF for in another window

Leakage behavior of the quasi-superlattice stack for multilevel charge storage

T. C. Chang; S. T. Yan; P. T. Liu; C. W. Chen; H. H. Wu; S. M. Sze

Appl. Phys. Lett. 84, 3687–3689 (2004) https://doi.org/10.1063/1.1739514

Abstract

View articletitled, Leakage behavior of the quasi-superlattice stack for multilevel charge storage

Open the PDF for in another window

DIELECTRICS AND FERROELECTRICITY

Piezoelectric response of engineered domains in ferroelectrics

Rajeev Ahluwalia; Turab Lookman; Avadh Saxena; Wenwu Cao

Appl. Phys. Lett. 84, 3450–3452 (2004) https://doi.org/10.1063/1.1737059

Abstract

View articletitled, Piezoelectric response of engineered domains in ferroelectrics

Open the PDF for in another window

Double-well model of dielectric relaxation current

John R. Jameson; Walter Harrison; P. B. Griffin; J. D. Plummer

Appl. Phys. Lett. 84, 3489–3491 (2004) https://doi.org/10.1063/1.1738177

Abstract

View articletitled, Double-well model of dielectric relaxation current

Open the PDF for in another window

Preparation and optical waveguide property of metal alkoxide solution-derived ${Pb(Zr}_{0.5} {Ti}_{0.5} {)O}_{3}$ thick films

S. H. Hu; X. J. Meng; G. J. Hu; J. H. Chu; N. Dai; L. Xu; L. Y. Liu; D. X. Li

Appl. Phys. Lett. 84, 3609–3611 (2004) https://doi.org/10.1063/1.1738178

Abstract

View articletitled, Preparation and optical waveguide property of metal alkoxide solution-derived <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Pb(Zr</mi><mrow><mi mathvariant="normal">0.5</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ti</mi><mrow><mi mathvariant="normal">0.5</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">)O</mi><mrow><mn>3</mn></mrow></msub></math> thick films

Open the PDF for in another window

Ferroelectric properties of La and Zr substituted ${Bi}_{4} {Ti}_{3} O_{12}$ thin films

S. T. Zhang; Y. F. Chen; J. Wang; G. X. Cheng; Z. G. Liu; N. B. Ming

Appl. Phys. Lett. 84, 3660–3662 (2004) https://doi.org/10.1063/1.1738936

Abstract

View articletitled, Ferroelectric properties of La and Zr substituted <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Bi</mi><mrow><mn>4</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ti</mi><mrow><mn>3</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>12</mn></mrow></msub></math> thin films

Open the PDF for in another window

INTERDISCIPLINARY AND GENERAL PHYSICS

Cyclic surface morphology change related to Li ion movement in Li secondary microbattery embedded in Si substrate: Atomic force microscopy studies

K. Kushida; K. Kuriyama

Appl. Phys. Lett. 84, 3456–3458 (2004) https://doi.org/10.1063/1.1737070

Abstract

View articletitled, Cyclic surface morphology change related to Li ion movement in Li secondary microbattery embedded in Si substrate: Atomic force microscopy studies

Open the PDF for in another window

Raman line shape of the $A_{1}$ longitudinal optical phonon in GaN

L. Shi; F. A. Ponce; J. Menéndez

Appl. Phys. Lett. 84, 3471–3473 (2004) https://doi.org/10.1063/1.1737792

Abstract

View articletitled, Raman line shape of the <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi>A</mi><mrow><mn>1</mn></mrow></msub></math> longitudinal optical phonon in GaN

Open the PDF for in another window

Toward ultrahigh-flux photovoltaic concentration

Jeffrey M. Gordon; Eugene A. Katz; Daniel Feuermann; Mahmoud Huleihil

Appl. Phys. Lett. 84, 3642–3644 (2004) https://doi.org/10.1063/1.1723690

Abstract

View articletitled, Toward ultrahigh-flux photovoltaic concentration

Open the PDF for in another window

Organic light-emitting devices with laminated top contacts

Daniel A. Bernards; Tomasz Biegala; Zachary A. Samuels; Jason D. Slinker; George G. Malliaras; Samuel Flores-Torres; Héctor D. Abruña; John A. Rogers

Appl. Phys. Lett. 84, 3675–3677 (2004) https://doi.org/10.1063/1.1739270

Abstract

View articletitled, Organic light-emitting devices with laminated top contacts

Open the PDF for in another window

MAGNETISM AND SUPERCONDUCTIVITY

Coherent terahertz emission from ferromagnetic films excited by femtosecond laser pulses

E. Beaurepaire; G. M. Turner; S. M. Harrel; M. C. Beard; J.-Y. Bigot; C. A. Schmuttenmaer

Appl. Phys. Lett. 84, 3465–3467 (2004) https://doi.org/10.1063/1.1737467

Abstract

View articletitled, Coherent terahertz emission from ferromagnetic films excited by femtosecond laser pulses

Open the PDF for in another window

Engineering molecular rings for magnetocaloric effect

M. Affronte; A. Ghirri; S. Carretta; G. Amoretti; S. Piligkos; G. A. Timco; R. E. P. Winpenny

Appl. Phys. Lett. 84, 3468–3470 (2004) https://doi.org/10.1063/1.1737468

Abstract

View articletitled, Engineering molecular rings for magnetocaloric effect

Open the PDF for in another window

Large high-frequency magnetoelectric response in laminated composites of piezoelectric ceramics, rare-earth iron alloys and polymer

Ning Cai; Ce-Wen Nan; Junyi Zhai; Yuanhua Lin

Appl. Phys. Lett. 84, 3516–3518 (2004) https://doi.org/10.1063/1.1739277

Abstract

View articletitled, Large high-frequency magnetoelectric response in laminated composites of piezoelectric ceramics, rare-earth iron alloys and polymer

Open the PDF for in another window

Crossover of thickness dependence of critical current density $J_{c} (T,H)$ in ${YBa}_{2} {Cu}_{3} O_{7−δ}$ thick films

Qiang Li; M. Suenaga; Z. Ye; S. R. Foltyn; H. Wang

Appl. Phys. Lett. 84, 3528–3530 (2004) https://doi.org/10.1063/1.1737067

Abstract

View articletitled, Crossover of thickness dependence of critical current density <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi>J</mi><mrow><mi>c</mi></mrow></msub><mi xmlns="">(T,H)</mi></math> in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">YBa</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Cu</mi><mrow><mn>3</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mtext>7−δ</mtext></mrow></msub></math> thick films

Open the PDF for in another window

Spin polarization in ferromagnet/insulator/superconductor structures with the superconductor on top of the barrier

C. Kaiser; S. S. P. Parkin

Appl. Phys. Lett. 84, 3582–3584 (2004) https://doi.org/10.1063/1.1737485

Abstract

View articletitled, Spin polarization in ferromagnet/insulator/superconductor structures with the superconductor on top of the barrier

Open the PDF for in another window

Correlation of magnetic moment versus spacing distance of metastable fcc structured iron

L. T. Kong; B. X. Liu

Appl. Phys. Lett. 84, 3627–3629 (2004) https://doi.org/10.1063/1.1738516

Abstract

View articletitled, Correlation of magnetic moment versus spacing distance of metastable fcc structured iron

Open the PDF for in another window

Upper critical fields of powder-in-tube-processed ${MgB}_{2} / Fe$ tape conductors

H. Kumakura; H. Kitaguchi; A. Matsumoto; H. Hatakeyama

Appl. Phys. Lett. 84, 3669–3671 (2004) https://doi.org/10.1063/1.1738947

Abstract

View articletitled, Upper critical fields of powder-in-tube-processed <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">MgB</mi><mrow><mn>2</mn></mrow></msub><mi xmlns="">/</mi><mi mathvariant="normal" xmlns="">Fe</mi></math> tape conductors

Open the PDF for in another window

Perpendicular exchange bias in antiferromagnetic-ferromagnetic nanostructures

J. Sort; B. Dieny; M. Fraune; C. Koenig; F. Lunnebach; B. Beschoten; G. Güntherodt

Appl. Phys. Lett. 84, 3696–3698 (2004) https://doi.org/10.1063/1.1737484

Abstract

View articletitled, Perpendicular exchange bias in antiferromagnetic-ferromagnetic nanostructures

Open the PDF for in another window

LASERS, OPTICS, AND OPTOELECTRONICS

Model for the photoinduced formation of diffraction gratings in liquid-crystalline composite materials

A. Veltri; R. Caputo; C. Umeton; A. V. Sukhov

Appl. Phys. Lett. 84, 3492–3494 (2004) https://doi.org/10.1063/1.1738182

Abstract

View articletitled, Model for the photoinduced formation of diffraction gratings in liquid-crystalline composite materials

Open the PDF for in another window

Optical coupling between a self-assembled microsphere grating and a rib waveguide

Chao-Yi Tai; Bayram Unal; James S. Wilkinson; Mohamed A. Ghanem; Philip N. Bartlett

Appl. Phys. Lett. 84, 3513–3515 (2004) https://doi.org/10.1063/1.1739275

Abstract

View articletitled, Optical coupling between a self-assembled microsphere grating and a rib waveguide

Open the PDF for in another window

Broadband laser mirrors made from porous silicon

W. H. Zheng; P. Reece; B. Q. Sun; M. Gal

Appl. Phys. Lett. 84, 3519–3521 (2004) https://doi.org/10.1063/1.1739507

Abstract

View articletitled, Broadband laser mirrors made from porous silicon

Open the PDF for in another window

Birefringence reduction method for optical polymers by the orientation-inhibition effect of silica particles

Hisanori Ohkita; Yasuyuki Abe; Hiroshi Kojima; Akihiro Tagaya; Yasuhiro Koike

Appl. Phys. Lett. 84, 3534–3536 (2004) https://doi.org/10.1063/1.1703846

Abstract

View articletitled, Birefringence reduction method for optical polymers by the orientation-inhibition effect of silica particles

Open the PDF for in another window

High frequency oscillation in photonic crystal nanolasers

Tomoyuki Yoshie; Marko Lončar; Axel Scherer; Yueming Qiu

Appl. Phys. Lett. 84, 3543–3545 (2004) https://doi.org/10.1063/1.1713051

Abstract

View articletitled, High frequency oscillation in photonic crystal nanolasers

Open the PDF for in another window

Room-temperature deep-ultraviolet lasing at 241.5 nm of AlGaN multiple-quantum-well laser

Takayoshi Takano; Yoshinobu Narita; Akihiko Horiuchi; Hideo Kawanishi

Appl. Phys. Lett. 84, 3567–3569 (2004) https://doi.org/10.1063/1.1737061

Abstract

View articletitled, Room-temperature deep-ultraviolet lasing at 241.5 nm of AlGaN multiple-quantum-well laser

Open the PDF for in another window

Four-wave mixing and direct terahertz emission with two-color semiconductor lasers

S. Hoffmann; M. Hofmann; E. Bründermann; M. Havenith; M. Matus; J. V. Moloney; A. S. Moskalenko; M. Kira; S. W. Koch; S. Saito; K. Sakai

Appl. Phys. Lett. 84, 3585–3587 (2004) https://doi.org/10.1063/1.1737486

Abstract

View articletitled, Four-wave mixing and direct terahertz emission with two-color semiconductor lasers

Open the PDF for in another window

Low-loss photonic crystal defect waveguides in InP

M. V. Kotlyar; T. Karle; M. D. Settle; L. O’Faolain; T. F. Krauss

Appl. Phys. Lett. 84, 3588–3590 (2004) https://doi.org/10.1063/1.1737487

Abstract

View articletitled, Low-loss photonic crystal defect waveguides in InP

Open the PDF for in another window

Stimulated terahertz emission from arsenic donors in silicon

H.-W. Hübers; S. G. Pavlov; H. Riemann; N. V. Abrosimov; R. Kh. Zhukavin; V. N. Shastin

Appl. Phys. Lett. 84, 3600–3602 (2004) https://doi.org/10.1063/1.1737800

Abstract

View articletitled, Stimulated terahertz emission from arsenic donors in silicon

Open the PDF for in another window

Gated-mode single-photon detection at 1550 nm by discharge pulse counting

Akio Yoshizawa; Ryosaku Kaji; Hidemi Tsuchida

Appl. Phys. Lett. 84, 3606–3608 (2004) https://doi.org/10.1063/1.1738176

Abstract

View articletitled, Gated-mode single-photon detection at 1550 nm by discharge pulse counting

Open the PDF for in another window

Effect of a photonic band gap on scattering from waveguide disorder

M. L. Povinelli; Steven G. Johnson; Elefterios Lidorikis; J. D. Joannopoulos; Marin Soljačić

Appl. Phys. Lett. 84, 3639–3641 (2004) https://doi.org/10.1063/1.1723686

Abstract

View articletitled, Effect of a photonic band gap on scattering from waveguide disorder

Open the PDF for in another window

Simultaneous measurement of the electronic and lattice temperatures in ${GaAs/Al}_{0.45} {Ga}_{0.55} As$ quantum-cascade lasers: Influence on the optical performance

Vincenzo Spagnolo; Gaetano Scamarcio; Hideaki Page; Carlo Sirtori

Appl. Phys. Lett. 84, 3690–3692 (2004) https://doi.org/10.1063/1.1739518

Abstract

View articletitled, Simultaneous measurement of the electronic and lattice temperatures in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">GaAs/Al</mi><mrow><mtext>0.45</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>0.55</mtext></mrow></msub><mi mathvariant="normal" xmlns="">As</mi></math> quantum-cascade lasers: Influence on the optical performance

Open the PDF for in another window

Continuous-wave operation of distributed feedback interband cascade lasers

Rui Q. Yang; C. J. Hill; B. H. Yang; C. M. Wong; R. E. Muller; P. M. Echternach

Appl. Phys. Lett. 84, 3699–3701 (2004) https://doi.org/10.1063/1.1738184

Abstract

View articletitled, Continuous-wave operation of distributed feedback interband cascade lasers

Open the PDF for in another window

ERRATA

Erratum: “Effect of anode dielectric coating on Hall thruster operation” [Appl. Phys. Lett. 84, 1070 (2004)]

L. Dorf; Y. Raitses; N. J. Fisch; V. Semenov

Appl. Phys. Lett. 84, 3702 (2004) https://doi.org/10.1063/1.1734680

View articletitled, Erratum: “Effect of anode dielectric coating on Hall thruster operation” [Appl. Phys. Lett. 84, 1070 (2004)]

Open the PDF for in another window

Erratum: “Shortest intersubband transition wavelength $(1.68 μ m)$ achieved in AlN/GaN multiple quantum wells by metalorganic vapor phase epitaxy” [Appl. Phys. Lett. 82, 4465 (2003)]

Ichitaro Waki; Chaiyasit Kumtornkittikul; Yukihiro Shimogaki; Yoshiaki Nakano

Appl. Phys. Lett. 84, 3703 (2004) https://doi.org/10.1063/1.1748852

View articletitled, Erratum: “Shortest intersubband transition wavelength <math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">(1.68 μ</mtext><mi mathvariant="normal" xmlns="">m</mi><mi xmlns="">)</mi></math> achieved in AlN/GaN multiple quantum wells by metalorganic vapor phase epitaxy” [Appl. Phys. Lett. 82, 4465 (2003)]

Open the PDF for in another window

Issues

DEVICE PHYSICS

APPLIED BIOPHYSICS

NANOSCALE SCIENCE AND DESIGN

STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

ELECTRONIC TRANSPORT AND SEMICONDUCTORS

DIELECTRICS AND FERROELECTRICITY

INTERDISCIPLINARY AND GENERAL PHYSICS

MAGNETISM AND SUPERCONDUCTIVITY

LASERS, OPTICS, AND OPTOELECTRONICS

ERRATA

RSS

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

This Feature Is Available To Subscribers Only