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LASERS, OPTICS, AND OPTOELECTRONICS

Stimulated emission and time-resolved photoluminescence in rf-sputtered ZnO thin films

Ü. Özgür; A. Teke; C. Liu; S.-J. Cho; H. Morkoç; H. O. Everitt

Appl. Phys. Lett. 84, 3223–3225 (2004) https://doi.org/10.1063/1.1713034

Abstract

View articletitled, Stimulated emission and time-resolved photoluminescence in rf-sputtered ZnO thin films

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Plasmon-enhancement of optical near-field of metal nanoaperture surface-emitting laser

Jiro Hashizume; Fumio Koyama

Appl. Phys. Lett. 84, 3226–3228 (2004) https://doi.org/10.1063/1.1723691

Abstract

View articletitled, Plasmon-enhancement of optical near-field of metal nanoaperture surface-emitting laser

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Double-biprism electron interferometry

Ken Harada; Akira Tonomura; Yoshihiko Togawa; Tetsuya Akashi; Tsuyoshi Matsuda

Appl. Phys. Lett. 84, 3229–3231 (2004) https://doi.org/10.1063/1.1715155

Abstract

View articletitled, Double-biprism electron interferometry

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Performance of a negative index of refraction lens

C. G. Parazzoli; R. B. Greegor; J. A. Nielsen; M. A. Thompson; K. Li; A. M. Vetter; M. H. Tanielian; D. C. Vier

Appl. Phys. Lett. 84, 3232–3234 (2004) https://doi.org/10.1063/1.1728304

Abstract

View articletitled, Performance of a negative index of refraction lens

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InAs/InP quantum-dot pillar microcavities using ${SiO}_{2} / {Ta}_{2} O_{5}$ Bragg reflectors with emission around $1.55 μ m$

Dan Dalacu; Daniel Poitras; Jacques Lefebvre; Philip J. Poole; Geof C. Aers; Robin L. Williams

Appl. Phys. Lett. 84, 3235–3237 (2004) https://doi.org/10.1063/1.1728318

Abstract

View articletitled, InAs/InP quantum-dot pillar microcavities using <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mn>2</mn></mrow></msub><mi xmlns="">/</mi><msub xmlns=""><mi mathvariant="normal">Ta</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>5</mn></mrow></msub></math> Bragg reflectors with emission around <math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">1.55 μ</mtext><mi mathvariant="normal" xmlns="">m</mi></math>

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Current-controlled group delay using a semiconductor Fabry–Perot amplifier

Serge Minin; Matthew Robert Fisher; Shun Lien Chuang

Appl. Phys. Lett. 84, 3238–3240 (2004) https://doi.org/10.1063/1.1715144

Abstract

View articletitled, Current-controlled group delay using a semiconductor Fabry–Perot amplifier

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Random laser action in ZnO nanorod arrays embedded in ZnO epilayers

S. F. Yu; Clement Yuen; S. P. Lau; W. I. Park; Gyu-Chul Yi

Appl. Phys. Lett. 84, 3241–3243 (2004) https://doi.org/10.1063/1.1734681

Abstract

View articletitled, Random laser action in ZnO nanorod arrays embedded in ZnO epilayers

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Zinc oxide thin-film random lasers on silicon substrate

S. F. Yu; Clement Yuen; S. P. Lau; H. W. Lee

Appl. Phys. Lett. 84, 3244–3246 (2004) https://doi.org/10.1063/1.1719279

Abstract

View articletitled, Zinc oxide thin-film random lasers on silicon substrate

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Nonlinear optical input–output characteristics of 1.55 μm injection-locked vertical-cavity surface-emitting lasers

Y. Onishi; F. Koyama; N. Nishiyama; C. Caneau; C. E. Zah

Appl. Phys. Lett. 84, 3247–3249 (2004) https://doi.org/10.1063/1.1728321

Abstract

View articletitled, Nonlinear optical input–output characteristics of 1.55 μm injection-locked vertical-cavity surface-emitting lasers

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Wavelength tunability of second-harmonic generation from two-dimensional $χ^{(2)}$ nonlinear photonic crystals with a tetragonal lattice structure

L.-H. Peng; C.-C. Hsu; Jimmy Ng; A. H. Kung

Appl. Phys. Lett. 84, 3250–3252 (2004) https://doi.org/10.1063/1.1728303

Abstract

View articletitled, Wavelength tunability of second-harmonic generation from two-dimensional <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi>χ</mi><mrow><mtext>(2)</mtext></mrow></msup></math> nonlinear photonic crystals with a tetragonal lattice structure

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Displacement measurement in real time using the attenuated total reflection technique

Jian Shi; Zhuangqi Cao; Jun Zhu; Qishun Shen

Appl. Phys. Lett. 84, 3253–3255 (2004) https://doi.org/10.1063/1.1715146

Abstract

View articletitled, Displacement measurement in real time using the attenuated total reflection technique

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Delta doping superlattice structures for amplitude modulators: Observation of the Stark effect and improvement of the chirp

C. V.-B. Tribuzy; M. P. Pires; S. M. Landi; M. Borgström; P. L. Souza

Appl. Phys. Lett. 84, 3256–3258 (2004) https://doi.org/10.1063/1.1715149

Abstract

View articletitled, Delta doping superlattice structures for amplitude modulators: Observation of the Stark effect and improvement of the chirp

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Photosensitive properties of a tin-doped sodium silicate glass for direct ultraviolet writing

Daniel Milanese; Monica Ferraris; Yvonne Menke; Massimo Olivero; Guido Perrone; Corin B. E. Gawith; Gilberto Brambilla; Peter G. R. Smith; Elizabeth R. Taylor

Appl. Phys. Lett. 84, 3259–3261 (2004) https://doi.org/10.1063/1.1715148

Abstract

View articletitled, Photosensitive properties of a tin-doped sodium silicate glass for direct ultraviolet writing

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Low-threshold polymeric distributed feedback lasers with metallic contacts

M. Reufer; S. Riechel; J. M. Lupton; J. Feldmann; U. Lemmer; D. Schneider; T. Benstem; T. Dobbertin; W. Kowalsky; A. Gombert; K. Forberich; V. Wittwer; U. Scherf

Appl. Phys. Lett. 84, 3262–3264 (2004) https://doi.org/10.1063/1.1712029

Abstract

View articletitled, Low-threshold polymeric distributed feedback lasers with metallic contacts

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Semiconductor coupled-resonator optical waveguide laser

Shayan Mookherjea

Appl. Phys. Lett. 84, 3265–3267 (2004) https://doi.org/10.1063/1.1719278

Abstract

View articletitled, Semiconductor coupled-resonator optical waveguide laser

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Continuous-wave emission from midinfrared IV–VI vertical-cavity surface-emitting lasers

J. Fürst; H. Pascher; T. Schwarzl; M. Böberl; G. Springholz; G. Bauer; W. Heiss

Appl. Phys. Lett. 84, 3268–3270 (2004) https://doi.org/10.1063/1.1719277

Abstract

View articletitled, Continuous-wave emission from midinfrared IV–VI vertical-cavity surface-emitting lasers

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Continuous-wave laser operation at 1.3 μm in ${Nd}^{3+}$ -doped ${Zn:LiNbO}_{3}$ channel waveguides

M. Domenech; G. Lifante

Appl. Phys. Lett. 84, 3271–3273 (2004) https://doi.org/10.1063/1.1719271

Abstract

View articletitled, Continuous-wave laser operation at 1.3 μm in <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">Nd</mi><mrow><mtext>3+</mtext></mrow></msup></math>-doped <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Zn:LiNbO</mi><mrow><mn>3</mn></mrow></msub></math> channel waveguides

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Optical cavity enhancement of light–sound interaction in acoustic phonon cavities

P. Lacharmoise; A. Fainstein; B. Jusserand; V. Thierry-Mieg

Appl. Phys. Lett. 84, 3274–3276 (2004) https://doi.org/10.1063/1.1734686

Abstract

View articletitled, Optical cavity enhancement of light–sound interaction in acoustic phonon cavities

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High detectivity InAs quantum dot infrared photodetectors

Eui-Tae Kim; Anupam Madhukar; Zhengmao Ye; Joe C. Campbell

Appl. Phys. Lett. 84, 3277–3279 (2004) https://doi.org/10.1063/1.1719259

Abstract

View articletitled, High detectivity InAs quantum dot infrared photodetectors

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Optical gain in porous silicon grains embedded in sol-gel derived ${SiO}_{2}$ matrix under femtosecond excitation

K. Luterová; K. Dohnalová; V. Švrček; I. Pelant; J.-P. Likforman; O. Crégut; P. Gilliot; B. Hönerlage

Appl. Phys. Lett. 84, 3280–3282 (2004) https://doi.org/10.1063/1.1723692

Abstract

View articletitled, Optical gain in porous silicon grains embedded in sol-gel derived <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mn>2</mn></mrow></msub></math> matrix under femtosecond excitation

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PLASMAS AND ELECTRICAL DISCHARGES

Ion energy distribution change at the transition of power-coupling modes in an immersed-coil-type inductively coupled Ar discharge

Dae-Hwan Kang; Dong-Kak Lee; Ki-Bum Kim; Jung-Joong Lee; Junghoon Joo

Appl. Phys. Lett. 84, 3283–3285 (2004) https://doi.org/10.1063/1.1715140

Abstract

View articletitled, Ion energy distribution change at the transition of power-coupling modes in an immersed-coil-type inductively coupled Ar discharge

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Narrow fluence window and giant isotope effect in low-energy hydrogen ion blistering of silicon

O. Moutanabbir; A. Giguère; B. Terreault

Appl. Phys. Lett. 84, 3286–3288 (2004) https://doi.org/10.1063/1.1723699

Abstract

View articletitled, Narrow fluence window and giant isotope effect in low-energy hydrogen ion blistering of silicon

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Correlated structural and optical characterization of ammonothermally grown bulk GaN

J. Bai; M. Dudley; B. Raghothamachar; P. Gouma; B. J. Skromme; L. Chen; P. J. Hartlieb; E. Michaels; J. W. Kolis

Appl. Phys. Lett. 84, 3289–3291 (2004) https://doi.org/10.1063/1.1715154

Abstract

View articletitled, Correlated structural and optical characterization of ammonothermally grown bulk GaN

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Full silicidation process for making ${CoSi}_{2}$ on ${SiO}_{2}$

Q. T. Zhao; E. Rije; St. Lenk; H. Bay; S. Mantl

Appl. Phys. Lett. 84, 3292–3294 (2004) https://doi.org/10.1063/1.1728299

Abstract

View articletitled, Full silicidation process for making <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CoSi</mi><mrow><mn>2</mn></mrow></msub></math> on <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mn>2</mn></mrow></msub></math>

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Grazing incidence x-ray diffraction and atomic force microscopy investigations of germanium dots grown on silicon (001) by successive depositions of germanium through a thin silicon oxide layer

M. Derivaz; P. Noé; R. Dianoux; A. Barski; A. Coati; Y. Garreau; C. Alandi

Appl. Phys. Lett. 84, 3295–3297 (2004) https://doi.org/10.1063/1.1715150

Abstract

View articletitled, Grazing incidence x-ray diffraction and atomic force microscopy investigations of germanium dots grown on silicon (001) by successive depositions of germanium through a thin silicon oxide layer

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Evolution of dislocation arrays in epitaxial ${BaTiO}_{3}$ thin films grown on (100) ${SrTiO}_{3}$

H. P. Sun; W. Tian; X. Q. Pan; J. H. Haeni; D. G. Schlom

Appl. Phys. Lett. 84, 3298–3300 (2004) https://doi.org/10.1063/1.1728300

Abstract

View articletitled, Evolution of dislocation arrays in epitaxial <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">BaTiO</mi><mrow><mn>3</mn></mrow></msub></math> thin films grown on (100) <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SrTiO</mi><mrow><mn>3</mn></mrow></msub></math>

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

High-mobility field-effect transistors based on transition metal dichalcogenides

V. Podzorov; M. E. Gershenson; Ch. Kloc; R. Zeis; E. Bucher

Appl. Phys. Lett. 84, 3301–3303 (2004) https://doi.org/10.1063/1.1723695

Abstract

View articletitled, High-mobility field-effect transistors based on transition metal dichalcogenides

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Temperature dependence and bowing of the bandgap in ${ZnSe}_{1−x} O_{x}$

A. Polimeni; M. Capizzi; Y. Nabetani; Y. Ito; T. Okuno; T. Kato; T. Matsumoto; T. Hirai

Appl. Phys. Lett. 84, 3304–3306 (2004) https://doi.org/10.1063/1.1719274

Abstract

View articletitled, Temperature dependence and bowing of the bandgap in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">ZnSe</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi>x</mi></mrow></msub></math>

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Characterization of InGaN/GaN multi-quantum-well blue-light-emitting diodes grown by metal organic chemical vapor deposition

K. S. Ramaiah; Y. K. Su; S. J. Chang; B. Kerr; H. P. Liu; I. G. Chen

Appl. Phys. Lett. 84, 3307–3309 (2004) https://doi.org/10.1063/1.1728302

Abstract

View articletitled, Characterization of InGaN/GaN multi-quantum-well blue-light-emitting diodes grown by metal organic chemical vapor deposition

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P-type conductivity in bulk ${Al}_{x} {Ga}_{1−x} N$ and ${Al}_{x} {Ga}_{1−x} {N/Al}_{y} {Ga}_{1−y} N$ superlattices with average Al mole fraction >20%

J. K. Kim; E. L. Waldron; Y.-L. Li; Th. Gessmann; E. F. Schubert; H. W. Jang; J.-L. Lee

Appl. Phys. Lett. 84, 3310–3312 (2004) https://doi.org/10.1063/1.1728322

Abstract

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The linearly graded two-dimensional $p–n$ junction

S. Petrosyan; A. Yesayan; D. Reuter; A. D. Wieck

Appl. Phys. Lett. 84, 3313–3315 (2004) https://doi.org/10.1063/1.1736316

Abstract

View articletitled, The linearly graded two-dimensional <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">p–n</mi></math> junction

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Detection of misfit dislocations at interface of strained ${Si/Si}_{0.8} {Ge}_{0.2}$ by electron-beam-induced current technique

X. L. Yuan; T. Sekiguchi; S. G. Ri; S. Ito

Appl. Phys. Lett. 84, 3316–3318 (2004) https://doi.org/10.1063/1.1734688

Abstract

View articletitled, Detection of misfit dislocations at interface of strained <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Si/Si</mi><mrow><mtext>0.8</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ge</mi><mrow><mtext>0.2</mtext></mrow></msub></math> by electron-beam-induced current technique

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Effect of thermal processing on mobility in strained Si/strained ${Si}_{1−y} {Ge}_{y}$ on relaxed ${Si}_{1−x} {Ge}_{x} (x<y)$ virtual substrates

Jongwan Jung; Shaofeng Yu; Oluwamuyiwa Oluwagbemiga Olubuyide; Judy L. Hoyt; Dimitri A. Antoniadis; Minjoo L. Lee; Eugene A. Fitzgerald

Appl. Phys. Lett. 84, 3319–3321 (2004) https://doi.org/10.1063/1.1719275

Abstract

View articletitled, Effect of thermal processing on mobility in strained Si/strained <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Si</mi><mrow><mtext>1−y</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ge</mi><mrow><mi>y</mi></mrow></msub></math> on relaxed <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Si</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ge</mi><mrow><mi>x</mi></mrow></msub><mi xmlns=""> (x<y)</mi></math> virtual substrates

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Dislocation- and crystallographic-dependent photoelectrochemical wet etching of gallium nitride

Y. Gao; M. D. Craven; J. S. Speck; S. P. Den Baars; E. L. Hu

Appl. Phys. Lett. 84, 3322–3324 (2004) https://doi.org/10.1063/1.1719281

Abstract

View articletitled, Dislocation- and crystallographic-dependent photoelectrochemical wet etching of gallium nitride

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Enhancement of boron solid solubility in Si by point-defect engineering

Lin Shao; Jianming Zhang; John Chen; D. Tang; Phillip E. Thompson; Sanjay Patel; Xuemei Wang; Hui Chen; Jiarui Liu; Wei-Kan Chu

Appl. Phys. Lett. 84, 3325–3327 (2004) https://doi.org/10.1063/1.1711179

Abstract

View articletitled, Enhancement of boron solid solubility in Si by point-defect engineering

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MAGNETISM AND SUPERCONDUCTIVITY

High-resolution imaging of fast magnetization dynamics in magnetic nanostructures

Hermann Stoll; Aleksander Puzic; Bartel van Waeyenberge; Peter Fischer; Joerg Raabe; Matthias Buess; Thomas Haug; Rainer Höllinger; Christian Back; Dieter Weiss; Gregory Denbeaux

Appl. Phys. Lett. 84, 3328–3330 (2004) https://doi.org/10.1063/1.1723698

Abstract

View articletitled, High-resolution imaging of fast magnetization dynamics in magnetic nanostructures

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Measurement of Ga implantation profiles in the sidewall and bottom of focused-ion-beam-etched structures

C.-M. Park; J. A. Bain; T. W. Clinton; P. A. A. van der Heijden; T. J. Klemmer

Appl. Phys. Lett. 84, 3331–3333 (2004) https://doi.org/10.1063/1.1715142

Abstract

View articletitled, Measurement of Ga implantation profiles in the sidewall and bottom of focused-ion-beam-etched structures

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Electrical characteristics and interface structure of magnetic tunnel junctions with aluminum oxyfluoride barrier

D. S. Kim; Y. Y. Yu; J. H. Ham; K. Char

Appl. Phys. Lett. 84, 3334–3336 (2004) https://doi.org/10.1063/1.1719273

Abstract

View articletitled, Electrical characteristics and interface structure of magnetic tunnel junctions with aluminum oxyfluoride barrier

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Optically-induced magnetization of CdMnTe self-assembled quantum dots

S. Mackowski; T. Gurung; T. A. Nguyen; H. E. Jackson; L. M. Smith; G. Karczewski; J. Kossut

Appl. Phys. Lett. 84, 3337–3339 (2004) https://doi.org/10.1063/1.1723694

Abstract

View articletitled, Optically-induced magnetization of CdMnTe self-assembled quantum dots

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Current density distribution in a spin valve determined through in situ conductance measurements

A. T. McCallum; S. E. Russek

Appl. Phys. Lett. 84, 3340–3342 (2004) https://doi.org/10.1063/1.1703842

Abstract

View articletitled, Current density distribution in a spin valve determined through in situ conductance measurements

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Low-noise magnetic-flux sensors based on the extraordinary magnetoresistance effect

C. H. Möller; O. Kronenwerth; Ch. Heyn; D. Grundler

Appl. Phys. Lett. 84, 3343–3345 (2004) https://doi.org/10.1063/1.1737060

Abstract

View articletitled, Low-noise magnetic-flux sensors based on the extraordinary magnetoresistance effect

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DIELECTRICS AND FERROELECTRICITY

Domain structure in a micron-sized ${PbZr}_{1−x} {Ti}_{x} O_{3}$ single crystal on a Ti substrate fabricated by hydrothermal synthesis

D. J. You; W. W. Jung; S. K. Choi; Yasuo Cho

Appl. Phys. Lett. 84, 3346–3348 (2004) https://doi.org/10.1063/1.1702129

Abstract

View articletitled, Domain structure in a micron-sized <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">PbZr</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ti</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>3</mn></mrow></msub></math> single crystal on a Ti substrate fabricated by hydrothermal synthesis

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High electrostriction and relaxor ferroelectric behavior in proton-irradiated poly(vinylidene fluoride-trifluoroethylene) copolymer

Shishang Guo; Xing-Zhong Zhao; Qifa Zhou; Helen L. W. Chan; C. L. Choy

Appl. Phys. Lett. 84, 3349–3351 (2004) https://doi.org/10.1063/1.1715151

Abstract

View articletitled, High electrostriction and relaxor ferroelectric behavior in proton-irradiated poly(vinylidene fluoride-trifluoroethylene) copolymer

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Temperature-dependent fatigue behaviors of ferroelectric ${ABO}_{3}$ -type and layered perovskite oxide thin films

G. L. Yuan; J.-M. Liu; Y. P. Wang; D. Wu; S. T. Zhang; Q. Y. Shao; Z. G. Liu

Appl. Phys. Lett. 84, 3352–3354 (2004) https://doi.org/10.1063/1.1734685

Abstract

View articletitled, Temperature-dependent fatigue behaviors of ferroelectric <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">ABO</mi><mrow><mn>3</mn></mrow></msub></math>-type and layered perovskite oxide thin films

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NANOSCALE SCIENCE AND DESIGN

Experimental investigation of Hall mobility in Ge/Si quantum dot superlattices

Y. Bao; A. A. Balandin; J. L. Liu; J. Liu; Y. H. Xie

Appl. Phys. Lett. 84, 3355–3357 (2004) https://doi.org/10.1063/1.1713049

Abstract

View articletitled, Experimental investigation of Hall mobility in Ge/Si quantum dot superlattices

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Low-temperature orientation-selective growth and ultraviolet emission of single-crystal ZnO nanowires

Tae-Won Kim; Tadashi Kawazoe; Shunsuke Yamazaki; Motoichi Ohtsu; Takashi Sekiguchi

Appl. Phys. Lett. 84, 3358–3360 (2004) https://doi.org/10.1063/1.1723696

Abstract

View articletitled, Low-temperature orientation-selective growth and ultraviolet emission of single-crystal ZnO nanowires

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Superstructures of self-assembled cobalt nanocrystals

Youhui Gao; Yuping Bao; Michael Beerman; Akira Yasuhara; Daisuke Shindo; Kannan M. Krishnan

Appl. Phys. Lett. 84, 3361–3363 (2004) https://doi.org/10.1063/1.1723687

Abstract

View articletitled, Superstructures of self-assembled cobalt nanocrystals

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Small-size sonic crystals with strong attenuation bands in the audible frequency range

Martin Hirsekorn

Appl. Phys. Lett. 84, 3364–3366 (2004) https://doi.org/10.1063/1.1723688

Abstract

View articletitled, Small-size sonic crystals with strong attenuation bands in the audible frequency range

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Microwave absorption properties of the ZnO nanowire-polyester composites

Y. J. Chen; M. S. Cao; T. H. Wang; Q. Wan

Appl. Phys. Lett. 84, 3367–3369 (2004) https://doi.org/10.1063/1.1702134

Abstract

View articletitled, Microwave absorption properties of the ZnO nanowire-polyester composites

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Interfacial free volumes and segregation effects in nanocrystalline ${Pd}_{85} {Zr}_{15}$ studied by positron annihilation

H. Weigand; W. Sprengel; R. Röwer; H.-E. Schaefer; T. Wejrzanowski; M. Kelsch

Appl. Phys. Lett. 84, 3370–3372 (2004) https://doi.org/10.1063/1.1734687

Abstract

View articletitled, Interfacial free volumes and segregation effects in nanocrystalline <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Pd</mi><mrow><mn>85</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Zr</mi><mrow><mn>15</mn></mrow></msub></math> studied by positron annihilation

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Scalable approach for lensless imaging at x-ray wavelengths

S. Eisebitt; M. Lörgen; W. Eberhardt; J. Lüning; S. Andrews; J. Stöhr

Appl. Phys. Lett. 84, 3373–3375 (2004) https://doi.org/10.1063/1.1728320

Abstract

View articletitled, Scalable approach for lensless imaging at x-ray wavelengths

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Periodic array of uniform ZnO nanorods by second-order self-assembly

H. Chik; J. Liang; S. G. Cloutier; N. Kouklin; J. M. Xu

Appl. Phys. Lett. 84, 3376–3378 (2004) https://doi.org/10.1063/1.1728298

Abstract

View articletitled, Periodic array of uniform ZnO nanorods by second-order self-assembly

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Current saturation in multiwalled carbon nanotubes by large bias

Y. X. Liang; Q. H. Li; T. H. Wang

Appl. Phys. Lett. 84, 3379–3381 (2004) https://doi.org/10.1063/1.1710731

Abstract

View articletitled, Current saturation in multiwalled carbon nanotubes by large bias

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Tuning of the electronic properties of self-assembled InAs/InP(001) quantum dots by rapid thermal annealing

J. F. Girard; C. Dion; P. Desjardins; C. Nı̀ Allen; P. J. Poole; S. Raymond

Appl. Phys. Lett. 84, 3382–3384 (2004) https://doi.org/10.1063/1.1715141

Abstract

View articletitled, Tuning of the electronic properties of self-assembled InAs/InP(001) quantum dots by rapid thermal annealing

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Frequency-dependent bifurcation point between field-cooled and zero-field-cooled dielectric constant of ${LiTaO}_{3}$ nanoparticles embedded in amorphous ${SiO}_{2}$

Shigemi Kohiki; Shintaro Kawakami; Shinichiro Nogami; Syozo Takada; Hirokazu Shimooka; Masato Okui; Sei Fukushima; Masanori Mitome; Yoshio Bando

Appl. Phys. Lett. 84, 3385–3387 (2004) https://doi.org/10.1063/1.1715147

Abstract

View articletitled, Frequency-dependent bifurcation point between field-cooled and zero-field-cooled dielectric constant of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">LiTaO</mi><mrow><mn>3</mn></mrow></msub></math> nanoparticles embedded in amorphous <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mn>2</mn></mrow></msub></math>

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Dense arrays of nanopores as x-ray lithography masks

S. A. Knaack; J. Eddington; Q. Leonard; F. Cerrina; M. Onellion

Appl. Phys. Lett. 84, 3388–3390 (2004) https://doi.org/10.1063/1.1705724

Abstract

View articletitled, Dense arrays of nanopores as x-ray lithography masks

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Freestanding SiGe/Si/Cr and ${SiGe/Si/Si}_{x} N_{y} / Cr$ microtubes

S. V. Golod; V. Ya. Prinz; P. Wägli; L. Zhang; O. Kirfel; E. Deckhardt; F. Glaus; C. David; D. Grützmacher

Appl. Phys. Lett. 84, 3391–3393 (2004) https://doi.org/10.1063/1.1736317

Abstract

View articletitled, Freestanding SiGe/Si/Cr and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiGe/Si/Si</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">N</mi><mrow><mi>y</mi></mrow></msub><mi xmlns="">/</mi><mi mathvariant="normal" xmlns="">Cr</mi></math> microtubes

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DEVICE PHYSICS

Room-temperature direct current operation of 290 nm light-emitting diodes with milliwatt power levels

A. J. Fischer; A. A. Allerman; M. H. Crawford; K. H. A. Bogart; S. R. Lee; R. J. Kaplar; W. W. Chow; S. R. Kurtz; K. W. Fullmer; J. J. Figiel

Appl. Phys. Lett. 84, 3394–3396 (2004) https://doi.org/10.1063/1.1728307

Abstract

View articletitled, Room-temperature direct current operation of 290 nm light-emitting diodes with milliwatt power levels

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Tandem dye-sensitized solar cell for improved power conversion efficiencies

M. Dürr; A. Bamedi; A. Yasuda; G. Nelles

Appl. Phys. Lett. 84, 3397–3399 (2004) https://doi.org/10.1063/1.1723685

Abstract

View articletitled, Tandem dye-sensitized solar cell for improved power conversion efficiencies

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High-stability ultrathin spin-on benzocyclobutene gate dielectric for polymer field-effect transistors

Lay-Lay Chua; Peter K. H. Ho; Henning Sirringhaus; Richard H. Friend

Appl. Phys. Lett. 84, 3400–3402 (2004) https://doi.org/10.1063/1.1710716

Abstract

View articletitled, High-stability ultrathin spin-on benzocyclobutene gate dielectric for polymer field-effect transistors

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Optical evidence of an electrothermal degradation of InGaN-based light-emitting diodes during electrical stress

M. Pavesi; M. Manfredi; G. Salviati; N. Armani; F. Rossi; G. Meneghesso; S. Levada; E. Zanoni; S. Du; I. Eliashevich

Appl. Phys. Lett. 84, 3403–3405 (2004) https://doi.org/10.1063/1.1734682

Abstract

View articletitled, Optical evidence of an electrothermal degradation of InGaN-based light-emitting diodes during electrical stress

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Structure of 6H silicon carbide/silicon dioxide interface trapping defects

David J. Meyer; Nathaniel A. Bohna; Patrick M. Lenahan; Aivars J. Lelis

Appl. Phys. Lett. 84, 3406–3408 (2004) https://doi.org/10.1063/1.1723693

Abstract

View articletitled, Structure of 6H silicon carbide/silicon dioxide interface trapping defects

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High-efficiency screen-printed solar cell on edge-defined film-fed grown ribbon silicon through optimized rapid belt co-firing of contacts and high-sheet-resistance emitter

Ajeet Rohatgi; Mohamed M. Hilali; Kenta Nakayashiki

Appl. Phys. Lett. 84, 3409–3411 (2004) https://doi.org/10.1063/1.1737069

Abstract

View articletitled, High-efficiency screen-printed solar cell on edge-defined film-fed grown ribbon silicon through optimized rapid belt co-firing of contacts and high-sheet-resistance emitter

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INTERDISCIPLINARY AND GENERAL PHYSICS

Writing submicrometric metallic patterns by ultraviolet synchrotron irradiation of nanostructured carbon and ${TiO}_{x}$ –carbon films

T. Caruso; R. G. Agostino; G. Bongiorno; E. Barborini; P. Piseri; P. Milani; C. Lenardi; S. La Rosa; M. Bertolo

Appl. Phys. Lett. 84, 3412–3414 (2004) https://doi.org/10.1063/1.1686890

Abstract

View articletitled, Writing submicrometric metallic patterns by ultraviolet synchrotron irradiation of nanostructured carbon and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">TiO</mi><mrow><mi>x</mi></mrow></msub></math>–carbon films

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Thermal simulation for a two-dimensional near-field optical recording system using a vertical-cavity surface-emitting laser

Kazuma Kurihara; Kenzo Nanri; Kenya Goto

Appl. Phys. Lett. 84, 3415–3417 (2004) https://doi.org/10.1063/1.1695202

Abstract

View articletitled, Thermal simulation for a two-dimensional near-field optical recording system using a vertical-cavity surface-emitting laser

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Issues

LASERS, OPTICS, AND OPTOELECTRONICS

PLASMAS AND ELECTRICAL DISCHARGES

STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

ELECTRONIC TRANSPORT AND SEMICONDUCTORS

MAGNETISM AND SUPERCONDUCTIVITY

DIELECTRICS AND FERROELECTRICITY

NANOSCALE SCIENCE AND DESIGN

DEVICE PHYSICS

INTERDISCIPLINARY AND GENERAL PHYSICS

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