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LASERS, OPTICS, AND OPTOELECTRONICS

Microscopic quantum theory of spatially resolved photoluminescence in semiconductor quantum structures

G. Pistone; S. Savasta; O. Di Stefano; R. Girlanda

Appl. Phys. Lett. 84, 2971–2973 (2004) https://doi.org/10.1063/1.1711184

Abstract

View articletitled, Microscopic quantum theory of spatially resolved photoluminescence in semiconductor quantum structures

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Continuous-wave second-harmonic generation in modal phase matched semiconductor waveguides

S. Ducci; L. Lanco; V. Berger; A. De Rossi; V. Ortiz; M. Calligaro

Appl. Phys. Lett. 84, 2974–2976 (2004) https://doi.org/10.1063/1.1703847

Abstract

View articletitled, Continuous-wave second-harmonic generation in modal phase matched semiconductor waveguides

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Middle-infrared transmission enhancement through periodically perforated metal films

Y.-H. Ye; Jia-Yu Zhang

Appl. Phys. Lett. 84, 2977–2979 (2004) https://doi.org/10.1063/1.1711166

Abstract

View articletitled, Middle-infrared transmission enhancement through periodically perforated metal films

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Photoinduced partial charge transfer between conjugated polymer and fullerene in solutions

Hongzhen Lin; Yufeng Weng; Hongmin Huang; Qingguo He; Min Zheng; Fenglian Bai

Appl. Phys. Lett. 84, 2980–2982 (2004) https://doi.org/10.1063/1.1712025

Abstract

View articletitled, Photoinduced partial charge transfer between conjugated polymer and fullerene in solutions

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High-efficiency chemical oxygen–iodine laser using a streamwise vortex generator

Masamori Endo; Tatsuo Osaka; Shuzaburo Takeda

Appl. Phys. Lett. 84, 2983–2985 (2004) https://doi.org/10.1063/1.1710711

Abstract

View articletitled, High-efficiency chemical oxygen–iodine laser using a streamwise vortex generator

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Light outcoupling efficiency of top-emitting organic light-emitting diodes

L. H. Smith; J. A. E. Wasey; W. L. Barnes

Appl. Phys. Lett. 84, 2986–2988 (2004) https://doi.org/10.1063/1.1712036

Abstract

View articletitled, Light outcoupling efficiency of top-emitting organic light-emitting diodes

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Gradual facet degradation of (Al,In)GaN quantum well lasers

V. Kümmler; A. Lell; V. Härle; U. T. Schwarz; T. Schoedl; W. Wegscheider

Appl. Phys. Lett. 84, 2989–2991 (2004) https://doi.org/10.1063/1.1704861

Abstract

View articletitled, Gradual facet degradation of (Al,In)GaN quantum well lasers

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$1.24 μ m$ InGaAs/GaAs quantum dot laser grown by metalorganic chemical vapor deposition using tertiarybutylarsine

I. N. Kaiander; R. L. Sellin; T. Kettler; N. N. Ledentsov; D. Bimberg; N. D. Zakharov; P. Werner

Appl. Phys. Lett. 84, 2992–2994 (2004) https://doi.org/10.1063/1.1711171

Abstract

View articletitled, <math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">1.24 μ</mtext><mi mathvariant="normal" xmlns="">m</mi></math> InGaAs/GaAs quantum dot laser grown by metalorganic chemical vapor deposition using tertiarybutylarsine

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Simulation and design of GaN/AlGaN far-infrared $(λ∼34 μ m)$ quantum-cascade laser

V. D. Jovanović; D. Indjin; Z. Ikonić; P. Harrison

Appl. Phys. Lett. 84, 2995–2997 (2004) https://doi.org/10.1063/1.1707219

Abstract

View articletitled, Simulation and design of GaN/AlGaN far-infrared <math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">(λ∼34 μ</mtext><mi mathvariant="normal" xmlns="">m</mi><mi xmlns="">)</mi></math> quantum-cascade laser

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Room-temperature optically pumped laser emission from a-plane GaN with high optical gain characteristics

E. Kuokstis; C. Q. Chen; J. W. Yang; M. Shatalov; M. E. Gaevski; V. Adivarahan; M. Asif Khan

Appl. Phys. Lett. 84, 2998–3000 (2004) https://doi.org/10.1063/1.1711169

Abstract

View articletitled, Room-temperature optically pumped laser emission from a-plane GaN with high optical gain characteristics

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Laser frequency stabilizations using electromagnetically induced transparency

Han Seb Moon; Lim Lee; Kyoungdae Kim; Jung Bog Kim

Appl. Phys. Lett. 84, 3001–3003 (2004) https://doi.org/10.1063/1.1713050

Abstract

View articletitled, Laser frequency stabilizations using electromagnetically induced transparency

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Analytic modeling for the limit of mask mean-to-target from the photolithographic standpoint

Sung-Woo Lee; Doo-Youl Lee; Han-Ku Cho; Woo-Sung Han

Appl. Phys. Lett. 84, 3004–3006 (2004) https://doi.org/10.1063/1.1713030

Abstract

View articletitled, Analytic modeling for the limit of mask mean-to-target from the photolithographic standpoint

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Deep-ultraviolet emission from an InGaAs semiconductor laser

S. M. Wang; Y. H. Shen; J. X. Xu; L. G. Hu; J. Zhu; D. R. Yang; H. Zhang; Y. W. Zeng; J. Q. Yao

Appl. Phys. Lett. 84, 3007–3009 (2004) https://doi.org/10.1063/1.1707218

Abstract

View articletitled, Deep-ultraviolet emission from an InGaAs semiconductor laser

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Noncollinear type-II second-harmonic generation in a ${Al}_{(0.3)} {Ga}_{(0.7)} {As/Al}_{2} O_{3}$ one-dimensional photonic crystal

A. Bosco; M. Centini; L. Sciscione; C. Sibilia; E. Fazio; M. Bertolotti; A. Fiore; A. Convertino; L. Cerri; M. Scalora

Appl. Phys. Lett. 84, 3010–3012 (2004) https://doi.org/10.1063/1.1713039

Abstract

View articletitled, Noncollinear type-II second-harmonic generation in a <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mtext>(0.3)</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>(0.7)</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">As/Al</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>3</mn></mrow></msub></math> one-dimensional photonic crystal

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4.2% efficient organic photovoltaic cells with low series resistances

Jiangeng Xue; Soichi Uchida; Barry P. Rand; Stephen R. Forrest

Appl. Phys. Lett. 84, 3013–3015 (2004) https://doi.org/10.1063/1.1713036

Abstract

View articletitled, 4.2% efficient organic photovoltaic cells with low series resistances

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Slab-edge modes in two-dimensional photonic crystals

Jin-Kyu Yang; Se-Heon Kim; Guk-Hyun Kim; Hong-Gyu Park; Yong-Hee Lee; Sung-Bock Kim

Appl. Phys. Lett. 84, 3016–3018 (2004) https://doi.org/10.1063/1.1715145

Abstract

View articletitled, Slab-edge modes in two-dimensional photonic crystals

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Polymer gratings with low surface relief based on photopolymerization-induced internal diffusion

Jinbo Zhou; Changzheng Sun; Bing Xiong; Jian Wang; Yi Luo

Appl. Phys. Lett. 84, 3019–3021 (2004) https://doi.org/10.1063/1.1728297

Abstract

View articletitled, Polymer gratings with low surface relief based on photopolymerization-induced internal diffusion

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Tunable distributed feedback color center laser using stabilized $F_{2}^{+**}$ color centers in LiF crystal

D. V. Martyshkin; J. G. Parker; V. V. Fedorov; S. B. Mirov

Appl. Phys. Lett. 84, 3022–3024 (2004) https://doi.org/10.1063/1.1699446

Abstract

View articletitled, Tunable distributed feedback color center laser using stabilized <math xmlns="http://www.w3.org/1998/Math/MathML"><msubsup xmlns=""><mi mathvariant="normal">F</mi><mrow><mn>2</mn></mrow><mrow><mi>+**</mi></mrow></msubsup></math> color centers in LiF crystal

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Phase locking of a two-dimensional laser array by controlling the far-field pattern

Yi Zhou; Liping Liu; Candice Etson; Yonatan Abranyos; Angela Padilla; Y. C. Chen

Appl. Phys. Lett. 84, 3025–3027 (2004) https://doi.org/10.1063/1.1699448

Abstract

View articletitled, Phase locking of a two-dimensional laser array by controlling the far-field pattern

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PLASMAS AND ELECTRICAL DISCHARGES

Temperature gradient in Hall thrusters

D. Staack; Y. Raitses; N. J. Fisch

Appl. Phys. Lett. 84, 3028–3030 (2004) https://doi.org/10.1063/1.1710732

Abstract

View articletitled, Temperature gradient in Hall thrusters

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

The role of the InGaAs surface in selective area epitaxy of quantum dots by indium segregation

T. S. Yeoh; R. B. Swint; V. C. Elarde; J. J. Coleman

Appl. Phys. Lett. 84, 3031–3033 (2004) https://doi.org/10.1063/1.1705731

Abstract

View articletitled, The role of the InGaAs surface in selective area epitaxy of quantum dots by indium segregation

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Nanothermodynamic analysis of the low-threshold-pressure-synthesized cubic boron nitride in supercritical-fluid systems

Cheng-Xin Wang; Yu-Hua Yang; Guo-Wei Yang

Appl. Phys. Lett. 84, 3034–3036 (2004) https://doi.org/10.1063/1.1713029

Abstract

View articletitled, Nanothermodynamic analysis of the low-threshold-pressure-synthesized cubic boron nitride in supercritical-fluid systems

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Visible light emission from polymer-based field-effect transistors

Tomo Sakanoue; Eiichi Fujiwara; Ryo Yamada; Hirokazu Tada

Appl. Phys. Lett. 84, 3037–3039 (2004) https://doi.org/10.1063/1.1710713

Abstract

View articletitled, Visible light emission from polymer-based field-effect transistors

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Strong elasticoluminescence from monoclinic-structure ${SrAl}_{2} O_{4}$

Chao-Nan Xu; Hiroshi Yamada; Xusheng Wang; Xu-Guang Zheng

Appl. Phys. Lett. 84, 3040–3042 (2004) https://doi.org/10.1063/1.1705716

Abstract

View articletitled, Strong elasticoluminescence from monoclinic-structure <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SrAl</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>4</mn></mrow></msub></math>

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Electrical characterization of zinc oxide thin films by electrochemical capacitance–voltage profiling

X. Tang; A. Clauzonnier; H. I. Campbell; K. A. Prior; B. C. Cavenett

Appl. Phys. Lett. 84, 3043–3045 (2004) https://doi.org/10.1063/1.1695442

Abstract

View articletitled, Electrical characterization of zinc oxide thin films by electrochemical capacitance–voltage profiling

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Time-resolved photoluminescence of InAs quantum dots in a GaAs quantum well

F. Pulizzi; A. J. Kent; A. Patanè; L. Eaves; M. Henini

Appl. Phys. Lett. 84, 3046–3048 (2004) https://doi.org/10.1063/1.1713052

Abstract

View articletitled, Time-resolved photoluminescence of InAs quantum dots in a GaAs quantum well

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Determination of the ionization energy of nitrogen acceptors in zinc oxide using photoluminescence spectroscopy

Lijun Wang; N. C. Giles

Appl. Phys. Lett. 84, 3049–3051 (2004) https://doi.org/10.1063/1.1711162

Abstract

View articletitled, Determination of the ionization energy of nitrogen acceptors in zinc oxide using photoluminescence spectroscopy

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Femtosecond studies of electron capture times in InGaN/GaN multiple quantum wells

W. H. Fan; S. M. Olaizola; J.-P. R. Wells; A. M. Fox; T. Wang; P. J. Parbrook; D. J. Mowbray; M. S. Skolnick

Appl. Phys. Lett. 84, 3052–3054 (2004) https://doi.org/10.1063/1.1707226

Abstract

View articletitled, Femtosecond studies of electron capture times in InGaN/GaN multiple quantum wells

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Fracture toughness from submicron derived indentation cracks

T. Scholz; G. A. Schneider; J. Muñoz-Saldaña; M. V. Swain

Appl. Phys. Lett. 84, 3055–3057 (2004) https://doi.org/10.1063/1.1711164

Abstract

View articletitled, Fracture toughness from submicron derived indentation cracks

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Scattering mechanisms in high-mobility strained Ge channels

B. Rössner; D. Chrastina; G. Isella; H. von Känel

Appl. Phys. Lett. 84, 3058–3060 (2004) https://doi.org/10.1063/1.1707223

Abstract

View articletitled, Scattering mechanisms in high-mobility strained Ge channels

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Effect of impurities on the mobility of single crystal pentacene

Oana D. Jurchescu; Jacob Baas; Thomas T. M. Palstra

Appl. Phys. Lett. 84, 3061–3063 (2004) https://doi.org/10.1063/1.1704874

Abstract

View articletitled, Effect of impurities on the mobility of single crystal pentacene

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Comparison of the electrical activation of $P^{+}$ and $N^{+}$ ions co-implanted along with ${Si}^{+}$ or $C^{+}$ ions into 4H-SiC

F. Schmid; G. Pensl

Appl. Phys. Lett. 84, 3064–3066 (2004) https://doi.org/10.1063/1.1707220

Abstract

View articletitled, Comparison of the electrical activation of <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">P</mi><mrow><mi>+</mi></mrow></msup></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">N</mi><mrow><mi>+</mi></mrow></msup></math> ions co-implanted along with <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">Si</mi><mrow><mi>+</mi></mrow></msup></math> or <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">C</mi><mrow><mi>+</mi></mrow></msup></math> ions into 4H-SiC

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Photoemission study and band alignment of the ${CuInSe}_{2} (001)/ CdS$ heterojunction

T. Schulmeyer; R. Hunger; A. Klein; W. Jaegermann; S. Niki

Appl. Phys. Lett. 84, 3067–3069 (2004) https://doi.org/10.1063/1.1712034

Abstract

View articletitled, Photoemission study and band alignment of the <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CuInSe</mi><mrow><mn>2</mn></mrow></msub><mtext xmlns="">(001)/</mtext><mi mathvariant="normal" xmlns="">CdS</mi></math> heterojunction

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Surface band bending in as-grown and plasma-treated $n$ -type GaN films using surface potential electric force microscopy

Sang-Jun Cho; Seydi Doğan; Shahriar Sabuktagin; Michael A. Reshchikov; Daniel K. Johnstone; Hadis Morkoç

Appl. Phys. Lett. 84, 3070–3072 (2004) https://doi.org/10.1063/1.1703843

Abstract

View articletitled, Surface band bending in as-grown and plasma-treated <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">n</mi></math>-type GaN films using surface potential electric force microscopy

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Electrical isolation, thermal stability and rf loss in a multilayer GaAs planar doped barrier diode structure bombarded by $H^{+}$ and ${Fe}^{+}$ ions

V. T. Vo; K. L. Koon; Z. R. Hu; C. N. Dharmasiri; S. C. Subramaniam; A. A. Rezazadeh

Appl. Phys. Lett. 84, 3073–3075 (2004) https://doi.org/10.1063/1.1712030

Abstract

View articletitled, Electrical isolation, thermal stability and rf loss in a multilayer GaAs planar doped barrier diode structure bombarded by <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">H</mi><mrow><mi>+</mi></mrow></msup></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">Fe</mi><mrow><mi>+</mi></mrow></msup></math> ions

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Transport mechanisms in atomic-layer-deposited ${Al}_{2} O_{3}$ dielectrics

M. Specht; M. Städele; S. Jakschik; U. Schröder

Appl. Phys. Lett. 84, 3076–3078 (2004) https://doi.org/10.1063/1.1703840

Abstract

View articletitled, Transport mechanisms in atomic-layer-deposited <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>3</mn></mrow></msub></math> dielectrics

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Direct and highly sensitive measurement of defect-related absorption in amorphous silicon thin films by cavity ringdown spectroscopy

I. M. P. Aarts; B. Hoex; A. H. M. Smets; R. Engeln; W. M. M. Kessels; M. C. M. van de Sanden

Appl. Phys. Lett. 84, 3079–3081 (2004) https://doi.org/10.1063/1.1713047

Abstract

View articletitled, Direct and highly sensitive measurement of defect-related absorption in amorphous silicon thin films by cavity ringdown spectroscopy

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Heteroepitaxial growth of (111) 3C–SiC on well-lattice-matched (110) Si substrates by chemical vapor deposition

Taro Nishiguchi; Mitsuhiro Nakamura; Koji Nishio; Toshiyuki Isshiki; Shigehiro Nishino

Appl. Phys. Lett. 84, 3082–3084 (2004) https://doi.org/10.1063/1.1719270

Abstract

View articletitled, Heteroepitaxial growth of (111) 3C–SiC on well-lattice-matched (110) Si substrates by chemical vapor deposition

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Positive temperature coefficient resistance and humidity sensing properties of Cd-doped ZnO nanowires

Q. Wan; Q. H. Li; Y. J. Chen; T. H. Wang; X. L. He; X. G. Gao; J. P. Li

Appl. Phys. Lett. 84, 3085–3087 (2004) https://doi.org/10.1063/1.1707225

Abstract

View articletitled, Positive temperature coefficient resistance and humidity sensing properties of Cd-doped ZnO nanowires

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Anomalous threshold voltage change by 2 MeV electron irradiation at $100 ° C$ in deep submicron metal-oxide-semiconductor field-effect transistors

K. Hayama; H. Ohyama; E. Simoen; J. M. Rafı́; A. Mercha; C. Claeys

Appl. Phys. Lett. 84, 3088–3090 (2004) https://doi.org/10.1063/1.1711170

Abstract

View articletitled, Anomalous threshold voltage change by 2 MeV electron irradiation at <math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">100 °</mtext><mi mathvariant="normal" xmlns="">C</mi></math> in deep submicron metal-oxide-semiconductor field-effect transistors

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MAGNETISM AND SUPERCONDUCTIVITY

Exploration of artificial multiferroic thin-film heterostructures using composition spreads

K.-S. Chang; M. A. Aronova; C.-L. Lin; M. Murakami; M.-H. Yu; J. Hattrick-Simpers; O. O. Famodu; S. Y. Lee; R. Ramesh; M. Wuttig; I. Takeuchi; C. Gao; L. A. Bendersky

Appl. Phys. Lett. 84, 3091–3093 (2004) https://doi.org/10.1063/1.1699474

Abstract

View articletitled, Exploration of artificial multiferroic thin-film heterostructures using composition spreads

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Crystal structure and magnetic properties of ${SmCo}_{5.85} {Si}_{0.90}$ compound

J. Luo; J. K. Liang; Y. Q. Guo; Q. L. Liu; L. T. Yang; F. S. Liu; G. H. Rao

Appl. Phys. Lett. 84, 3094–3096 (2004) https://doi.org/10.1063/1.1712026

Abstract

View articletitled, Crystal structure and magnetic properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SmCo</mi><mrow><mtext>5.85</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Si</mi><mrow><mtext>0.90</mtext></mrow></msub></math> compound

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Giant magnetoresistance in PtMn alloys

M. J. Carey; A. B. Banful; L. Folks; B. A. Gurney; R. F. C. Farrow; A. J. Kellock

Appl. Phys. Lett. 84, 3097–3099 (2004) https://doi.org/10.1063/1.1712022

Abstract

View articletitled, Giant magnetoresistance in PtMn alloys

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Transition of magnetic state from A-type antiferromagnetic to ferromagnetic in electron-doped ${Nd}_{1−x} {Ce}_{x} {MnO}_{3}$

Shixiong Zhang; Lan Luan; Shun Tan; Yuheng Zhang

Appl. Phys. Lett. 84, 3100–3102 (2004) https://doi.org/10.1063/1.1712023

Abstract

View articletitled, Transition of magnetic state from A-type antiferromagnetic to ferromagnetic in electron-doped <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Nd</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ce</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">MnO</mi><mrow><mn>3</mn></mrow></msub></math>

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Spin momentum transfer in current perpendicular to the plane spin valves

M. Covington; A. Rebei; G. J. Parker; M. A. Seigler

Appl. Phys. Lett. 84, 3103–3105 (2004) https://doi.org/10.1063/1.1707227

Abstract

View articletitled, Spin momentum transfer in current perpendicular to the plane spin valves

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Spin-dependent single-electron-tunneling effects in epitaxial Fe nanoparticles

F. Ernult; K. Yamane; S. Mitani; K. Yakushiji; K. Takanashi; Y. K. Takahashi; K. Hono

Appl. Phys. Lett. 84, 3106–3108 (2004) https://doi.org/10.1063/1.1712035

Abstract

View articletitled, Spin-dependent single-electron-tunneling effects in epitaxial Fe nanoparticles

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Effect of sample size on magnetic $J_{c}$ for ${MgB}_{2}$ superconductor

J. Horvat; S. Soltanian; X. L. Wang; S. X. Dou

Appl. Phys. Lett. 84, 3109–3111 (2004) https://doi.org/10.1063/1.1713031

Abstract

View articletitled, Effect of sample size on magnetic <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi>J</mi><mrow><mi>c</mi></mrow></msub></math> for <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">MgB</mi><mrow><mn>2</mn></mrow></msub></math> superconductor

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Optical and magneto-optical studies of two-dimensional metallodielectric photonic crystals on cobalt films

M. Diwekar; V. Kamaev; J. Shi; Z. V. Vardeny

Appl. Phys. Lett. 84, 3112–3114 (2004) https://doi.org/10.1063/1.1712027

Abstract

View articletitled, Optical and magneto-optical studies of two-dimensional metallodielectric photonic crystals on cobalt films

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Faraday rotation in ${Co}_{0.85} {Zn}_{0.15} {Fe}_{2} O_{4}$ spinel ferrite nanoparticulate films under low applied fields

Richard M. Anderson; Christy R. Vestal; Anna C. S. Samia; Z. John Zhang

Appl. Phys. Lett. 84, 3115–3117 (2004) https://doi.org/10.1063/1.1712031

Abstract

View articletitled, Faraday rotation in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Co</mi><mrow><mtext>0.85</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Zn</mi><mrow><mtext>0.15</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Fe</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>4</mn></mrow></msub></math> spinel ferrite nanoparticulate films under low applied fields

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Observation of spin-transfer switching in deep submicron-sized and low-resistance magnetic tunnel junctions

Yiming Huai; Frank Albert; Paul Nguyen; Mahendra Pakala; Thierry Valet

Appl. Phys. Lett. 84, 3118–3120 (2004) https://doi.org/10.1063/1.1707228

Abstract

View articletitled, Observation of spin-transfer switching in deep submicron-sized and low-resistance magnetic tunnel junctions

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Thermal and electrical characterization of Cu/CoFe superlattices

Y. Yang; W. Liu; M. Asheghi

Appl. Phys. Lett. 84, 3121–3123 (2004) https://doi.org/10.1063/1.1713033

Abstract

View articletitled, Thermal and electrical characterization of Cu/CoFe superlattices

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DIELECTRICS AND FERROELECTRICITY

Enhanced electromechanical properties in all-polymer percolative composites

Jiang Yu Li; Cheng Huang; Qiming Zhang

Appl. Phys. Lett. 84, 3124–3126 (2004) https://doi.org/10.1063/1.1702127

Abstract

View articletitled, Enhanced electromechanical properties in all-polymer percolative composites

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Polarization retention in $Pb ({Zr}_{0.4} {Ti}_{0.6}) O_{3}$ capacitors with ${IrO}_{2}$ top electrodes

B. S. Kang; D. J. Kim; J. Y. Jo; T. W. Noh; Jong-Gul Yoon; T. K. Song; Y. K. Lee; J. K. Lee; S. Shin; Y. S. Park

Appl. Phys. Lett. 84, 3127–3129 (2004) https://doi.org/10.1063/1.1710715

Abstract

View articletitled, Polarization retention in <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">Pb</mi><mi xmlns="">(</mi><msub xmlns=""><mi mathvariant="normal">Zr</mi><mrow><mtext>0.4</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ti</mi><mrow><mtext>0.6</mtext></mrow></msub><mi xmlns="">)</mi><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>3</mn></mrow></msub></math> capacitors with <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">IrO</mi><mrow><mn>2</mn></mrow></msub></math> top electrodes

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Polarization switching of submicron ferroelectric capacitors using an atomic force microscope

S. Prasertchoung; V. Nagarajan; Z. Ma; R. Ramesh; J. S. Cross; M. Tsukada

Appl. Phys. Lett. 84, 3130–3132 (2004) https://doi.org/10.1063/1.1707221

Abstract

View articletitled, Polarization switching of submicron ferroelectric capacitors using an atomic force microscope

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Antiphase-type planar defects in ${Pb(Mg}_{1/3} {Nb}_{2/3−δ}) O_{3} / {SrTiO}_{3}$ thin films

S. H. Seo; H. C. Kang; D. Y. Noh; Y. Yamada; K. Wasa

Appl. Phys. Lett. 84, 3133–3135 (2004) https://doi.org/10.1063/1.1710714

Abstract

View articletitled, Antiphase-type planar defects in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Pb(Mg</mi><mrow><mtext>1/3</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Nb</mi><mrow><mtext>2/3−δ</mtext></mrow></msub><mi xmlns="">)</mi><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>3</mn></mrow></msub><mi xmlns="">/</mi><msub xmlns=""><mi mathvariant="normal">SrTiO</mi><mrow><mn>3</mn></mrow></msub></math> thin films

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Dielectric nonlinear characteristics of ${Ba(Zr}_{0.35} {Ti}_{0.65}) O_{3}$ thin films grown by a sol-gel process

Jiwei Zhai; Xi Yao; Liangying Zhang; Bo Shen

Appl. Phys. Lett. 84, 3136–3138 (2004) https://doi.org/10.1063/1.1715152

Abstract

View articletitled, Dielectric nonlinear characteristics of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ba(Zr</mi><mrow><mtext>0.35</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ti</mi><mrow><mtext>0.65</mtext></mrow></msub><mi xmlns="">)</mi><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>3</mn></mrow></msub></math> thin films grown by a sol-gel process

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NANOSCALE SCIENCE AND DESIGN

Possibility of a metallic field-effect transistor

Slava V. Rotkin; Karl Hess

Appl. Phys. Lett. 84, 3139–3141 (2004) https://doi.org/10.1063/1.1710717

Abstract

View articletitled, Possibility of a metallic field-effect transistor

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Nanoscale electrical characterization of trap-assisted quasibreakdown fluctuations in ${SiO}_{2}$

C. I. Pakes; S. Ramelow; S. Prawer; D. N. Jamieson

Appl. Phys. Lett. 84, 3142–3144 (2004) https://doi.org/10.1063/1.1712033

Abstract

View articletitled, Nanoscale electrical characterization of trap-assisted quasibreakdown fluctuations in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mn>2</mn></mrow></msub></math>

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Interfacial reactions of Mn/GaAs thin films

J. L. Hilton; B. D. Schultz; S. McKernan; C. J. Palmstrøm

Appl. Phys. Lett. 84, 3145–3147 (2004) https://doi.org/10.1063/1.1703831

Abstract

View articletitled, Interfacial reactions of Mn/GaAs thin films

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Modification of mechanical properties of silicon nanocantilevers by self-ion implantation

Kumar R. Virwani; Ajay P. Malshe; Dinesh K. Sood; Robert G. Elliman

Appl. Phys. Lett. 84, 3148–3150 (2004) https://doi.org/10.1063/1.1644612

Abstract

View articletitled, Modification of mechanical properties of silicon nanocantilevers by self-ion implantation

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A unidirectional photonic crystal dispersion-based emitter

Caihua Chen; Ge Jin; Shouyuan Shi; Ahmed Sharkawy; Dennis W. Prather

Appl. Phys. Lett. 84, 3151–3153 (2004) https://doi.org/10.1063/1.1713037

Abstract

View articletitled, A unidirectional photonic crystal dispersion-based emitter

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Metal-nanoparticle single-electron transistors fabricated using electromigration

K. I. Bolotin; F. Kuemmeth; A. N. Pasupathy; D. C. Ralph

Appl. Phys. Lett. 84, 3154–3156 (2004) https://doi.org/10.1063/1.1695203

Abstract

View articletitled, Metal-nanoparticle single-electron transistors fabricated using electromigration

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Low-temperature fabrication of carbon nanofibers by self-assembling of polycyclic aromatic hydrocarbon molecules

Shich-Chang Suen; Wha-Tzong Whang; Bo-Wei Wu; Yi-Fan Lai

Appl. Phys. Lett. 84, 3157–3159 (2004) https://doi.org/10.1063/1.1707229

Abstract

View articletitled, Low-temperature fabrication of carbon nanofibers by self-assembling of polycyclic aromatic hydrocarbon molecules

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DEVICE PHYSICS

Phosphorescence of aluminum tris(quinoline-8-olate)

M. Cölle; C. Gärditz

Appl. Phys. Lett. 84, 3160–3162 (2004) https://doi.org/10.1063/1.1711185

Abstract

View articletitled, Phosphorescence of aluminum tris(quinoline-8-olate)

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Anomalous hot-carrier-induced degradation of offset gated polycrystalline silicon thin-film transistors

A. Hatzopoulos; C. A. Dimitriadis; G. Pananakakis; G. Ghibaudo; G. Kamarinos

Appl. Phys. Lett. 84, 3163–3165 (2004) https://doi.org/10.1063/1.1707222

Abstract

View articletitled, Anomalous hot-carrier-induced degradation of offset gated polycrystalline silicon thin-film transistors

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Remote collection and measurement of photogenerated carriers swept by surface acoustic waves in GaN

T. Palacios; F. Calle; J. Grajal

Appl. Phys. Lett. 84, 3166–3168 (2004) https://doi.org/10.1063/1.1711172

Abstract

View articletitled, Remote collection and measurement of photogenerated carriers swept by surface acoustic waves in GaN

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Diagnostics of doping integrity in $n^{+} {/p/n}^{+}$ transistor-channel structure by scanning nonlinear dielectric microscopy

Takashi Matsukawa; Chiaki Yasumuro; Meishoku Masahara; Hisao Tanoue; Seigo Kanemaru

Appl. Phys. Lett. 84, 3169–3171 (2004) https://doi.org/10.1063/1.1707224

Abstract

View articletitled, Diagnostics of doping integrity in <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi>n</mi><mrow><mi>+</mi></mrow></msup><msup xmlns=""><mi>/p/n</mi><mrow><mi>+</mi></mrow></msup></math> transistor-channel structure by scanning nonlinear dielectric microscopy

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Extension of Coulomb blockade region by quantum confinement in the ultrasmall silicon dot in a single-hole transistor at room temperature

Masumi Saitoh; Toshiro Hiramoto

Appl. Phys. Lett. 84, 3172–3174 (2004) https://doi.org/10.1063/1.1710709

Abstract

View articletitled, Extension of Coulomb blockade region by quantum confinement in the ultrasmall silicon dot in a single-hole transistor at room temperature

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Band alignment at the $i- ZnO/CdS$ interface in $Cu(In,Ga)(S,Se)_{2}$ thin-film solar cells

L. Weinhardt; C. Heske; E. Umbach; T. P. Niesen; S. Visbeck; F. Karg

Appl. Phys. Lett. 84, 3175–3177 (2004) https://doi.org/10.1063/1.1704877

Abstract

View articletitled, Band alignment at the <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">i-</mi><mi mathvariant="normal" xmlns="">ZnO/CdS</mi></math> interface in <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">Cu(In,Ga)(S,Se</mi><msub xmlns=""><mi>)</mi><mrow><mn>2</mn></mrow></msub></math> thin-film solar cells

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Coulomb oscillations based on band-to-band tunneling in a degenerately doped silicon metal-oxide-semiconductor field-effect transistor

Kyung Rok Kim; Dae Hwan Kim; Jong Duk Lee; Byung-Gook Park

Appl. Phys. Lett. 84, 3178–3180 (2004) https://doi.org/10.1063/1.1707217

Abstract

View articletitled, Coulomb oscillations based on band-to-band tunneling in a degenerately doped silicon metal-oxide-semiconductor field-effect transistor

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Enhanced efficiency of plastic photovoltaic devices by blending with ionic solid electrolytes

Fang-Chung Chen; Qianfei Xu; Yang Yang

Appl. Phys. Lett. 84, 3181–3183 (2004) https://doi.org/10.1063/1.1710712

Abstract

View articletitled, Enhanced efficiency of plastic photovoltaic devices by blending with ionic solid electrolytes

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Bias-induced threshold voltages shifts in thin-film organic transistors

H. L. Gomes; P. Stallinga; F. Dinelli; M. Murgia; F. Biscarini; D. M. de Leeuw; T. Muck; J. Geurts; L. W. Molenkamp; V. Wagner

Appl. Phys. Lett. 84, 3184–3186 (2004) https://doi.org/10.1063/1.1713035

Abstract

View articletitled, Bias-induced threshold voltages shifts in thin-film organic transistors

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APPLIED BIOPHYSICS

Effect of mass and stress on resonant frequency shift of functionalized $Pb ({Zr}_{0.52} {Ti}_{0.48}) O_{3}$ thin film microcantilever for the detection of C-reactive protein

Jeong Hoon Lee; Tae Song Kim; Ki Hyun Yoon

Appl. Phys. Lett. 84, 3187–3189 (2004) https://doi.org/10.1063/1.1712028

Abstract

View articletitled, Effect of mass and stress on resonant frequency shift of functionalized <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">Pb</mi><mi xmlns="">(</mi><msub xmlns=""><mi mathvariant="normal">Zr</mi><mrow><mtext>0.52</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ti</mi><mrow><mtext>0.48</mtext></mrow></msub><mi xmlns="">)</mi><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>3</mn></mrow></msub></math> thin film microcantilever for the detection of C-reactive protein

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High-resolution imaging of cardiac biomagnetic fields using a low-transition-temperature superconducting quantum interference device microscope

L. E. Fong; J. R. Holzer; K. McBride; E. A. Lima; F. Baudenbacher; M. Radparvar

Appl. Phys. Lett. 84, 3190–3192 (2004) https://doi.org/10.1063/1.1704871

Abstract

View articletitled, High-resolution imaging of cardiac biomagnetic fields using a low-transition-temperature superconducting quantum interference device microscope

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INTERDISCIPLINARY AND GENERAL PHYSICS

Effect of tungsten implantation on electron field emission properties of ion-beam-synthesized SiC layers

W. M. Tsang; S. P. Wong; J. K. N. Lindner

Appl. Phys. Lett. 84, 3193–3195 (2004) https://doi.org/10.1063/1.1705730

Abstract

View articletitled, Effect of tungsten implantation on electron field emission properties of ion-beam-synthesized SiC layers

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Optical vibration detection with a photoconductance monitoring array

P. Heinz; E. Garmire

Appl. Phys. Lett. 84, 3196–3198 (2004) https://doi.org/10.1063/1.1712032

Abstract

View articletitled, Optical vibration detection with a photoconductance monitoring array

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Body-centered-cubic phase hydrogen storage alloy with improved capacity and fast activation

Xuebin Yu; Zhu Wu; Feng Li; Baojia Xia; Naixin Xu

Appl. Phys. Lett. 84, 3199–3201 (2004) https://doi.org/10.1063/1.1712021

Abstract

View articletitled, Body-centered-cubic phase hydrogen storage alloy with improved capacity and fast activation

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Three-dimensional microfabrication in bulk silicon using high-energy protons

E. J. Teo; M. B. H. Breese; E. P. Tavernier; A. A. Bettiol; F. Watt; M. H. Liu; D. J. Blackwood

Appl. Phys. Lett. 84, 3202–3204 (2004) https://doi.org/10.1063/1.1723703

Abstract

View articletitled, Three-dimensional microfabrication in bulk silicon using high-energy protons

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Amorphization of silicon by femtosecond laser pulses

Jimmy Jia; Ming Li; Carl V. Thompson

Appl. Phys. Lett. 84, 3205–3207 (2004) https://doi.org/10.1063/1.1719280

Abstract

View articletitled, Amorphization of silicon by femtosecond laser pulses

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Issues

LASERS, OPTICS, AND OPTOELECTRONICS

PLASMAS AND ELECTRICAL DISCHARGES

STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

ELECTRONIC TRANSPORT AND SEMICONDUCTORS

MAGNETISM AND SUPERCONDUCTIVITY

DIELECTRICS AND FERROELECTRICITY

NANOSCALE SCIENCE AND DESIGN

DEVICE PHYSICS

APPLIED BIOPHYSICS

INTERDISCIPLINARY AND GENERAL PHYSICS

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