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LASERS, OPTICS, AND OPTOELECTRONICS

Microsecond time scale lateral-mode dynamics in a narrow stripe InGaN laser

Christoph Eichler; Daniel Hofstetter; Weng W. Chow; Stephan Miller; Andreas Weimar; Alfred Lell; Volker Härle

Appl. Phys. Lett. 84, 2473–2475 (2004) https://doi.org/10.1063/1.1691497

Abstract

View articletitled, Microsecond time scale lateral-mode dynamics in a narrow stripe InGaN laser

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Polymer electrophosphorescence devices with high power conversion efficiencies

X. H. Yang; D. Neher

Appl. Phys. Lett. 84, 2476–2478 (2004) https://doi.org/10.1063/1.1691194

Abstract

View articletitled, Polymer electrophosphorescence devices with high power conversion efficiencies

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Thermal-flow technique for reducing surface roughness and controlling gap size in polymer microring resonators

Chung-Yen Chao; L. Jay Guo

Appl. Phys. Lett. 84, 2479–2481 (2004) https://doi.org/10.1063/1.1691492

Abstract

View articletitled, Thermal-flow technique for reducing surface roughness and controlling gap size in polymer microring resonators

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$1.31 μ m$ InGaAs quantum dot light-emitting diodes grown directly in a GaAs matrix by metalorganic chemical-vapor deposition

M. T. Todaro; M. De Giorgi; V. Tasco; M. De Vittorio; R. Cingolani; A. Passaseo

Appl. Phys. Lett. 84, 2482–2484 (2004) https://doi.org/10.1063/1.1687979

Abstract

View articletitled, <math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">1.31 μ</mtext><mi mathvariant="normal" xmlns="">m</mi></math> InGaAs quantum dot light-emitting diodes grown directly in a GaAs matrix by metalorganic chemical-vapor deposition

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Current-injection spiral-shaped microcavity disk laser diodes with unidirectional emission

M. Kneissl; M. Teepe; N. Miyashita; N. M. Johnson; G. D. Chern; R. K. Chang

Appl. Phys. Lett. 84, 2485–2487 (2004) https://doi.org/10.1063/1.1691494

Abstract

View articletitled, Current-injection spiral-shaped microcavity disk laser diodes with unidirectional emission

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Optically pumped ultraviolet microdisk laser on a silicon substrate

X. Liu; W. Fang; Y. Huang; X. H. Wu; S. T. Ho; H. Cao; R. P. H. Chang

Appl. Phys. Lett. 84, 2488–2490 (2004) https://doi.org/10.1063/1.1695090

Abstract

View articletitled, Optically pumped ultraviolet microdisk laser on a silicon substrate

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Phototunable photonic bandgap in a chiral liquid crystal laser device

Seiichi Furumi; Shiyoshi Yokoyama; Akira Otomo; Shinro Mashiko

Appl. Phys. Lett. 84, 2491–2493 (2004) https://doi.org/10.1063/1.1699445

Abstract

View articletitled, Phototunable photonic bandgap in a chiral liquid crystal laser device

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Continuous-wave operation of terahertz quantum-cascade lasers above liquid-nitrogen temperature

Sushil Kumar; Benjamin S. Williams; Stephen Kohen; Qing Hu; John L. Reno

Appl. Phys. Lett. 84, 2494–2496 (2004) https://doi.org/10.1063/1.1695099

Abstract

View articletitled, Continuous-wave operation of terahertz quantum-cascade lasers above liquid-nitrogen temperature

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Anticrossing between heavy-hole states in ${Si}_{0.2} {Ge}_{0.8} / Si$ -coupled quantum wells grown on ${Si}_{0.5} {Ge}_{0.5}$ pseudosubstrate

L. Diehl; A. Borak; S. Mentese; D. Grützmacher; H. Sigg; U. Gennser; I. Sagnes; Y. Campidelli; O. Kermarrec; D. Bensahel; J. Faist

Appl. Phys. Lett. 84, 2497–2499 (2004) https://doi.org/10.1063/1.1691173

Abstract

View articletitled, Anticrossing between heavy-hole states in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Si</mi><mrow><mtext>0.2</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ge</mi><mrow><mtext>0.8</mtext></mrow></msub><mi xmlns="">/</mi><mi mathvariant="normal" xmlns="">Si</mi></math>-coupled quantum wells grown on <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Si</mi><mrow><mtext>0.5</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ge</mi><mrow><mtext>0.5</mtext></mrow></msub></math> pseudosubstrate

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PLASMAS AND ELECTRICAL DISCHARGES

Dependence of the sputter-etching characteristics of strontium–titanate–oxide thin films on their structural properties

L. Stafford; M. Gaidi; M. Chaker; O. Langlois; J. Margot; F. Schiettekatte; P. Wei

Appl. Phys. Lett. 84, 2500–2502 (2004) https://doi.org/10.1063/1.1702131

Abstract

View articletitled, Dependence of the sputter-etching characteristics of strontium–titanate–oxide thin films on their structural properties

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Nanoscale analysis of the In and N spatial redistributions upon annealing of GaInNAs quantum wells

J.-M. Chauveau; A. Trampert; K. H. Ploog; E. Tournié

Appl. Phys. Lett. 84, 2503–2505 (2004) https://doi.org/10.1063/1.1690108

Abstract

View articletitled, Nanoscale analysis of the In and N spatial redistributions upon annealing of GaInNAs quantum wells

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Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions

Yung-Chen Cheng; En-Chiang Lin; Cheng-Ming Wu; C. C. Yang; Jer-Ren Yang; Andreas Rosenauer; Kung-Jen Ma; Shih-Chen Shi; L. C. Chen; Chang-Chi Pan; Jen-Inn Chyi

Appl. Phys. Lett. 84, 2506–2508 (2004) https://doi.org/10.1063/1.1690872

Abstract

View articletitled, Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions

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Order–disorder transition of anodic alumina nanochannel arrays grown under the guidance of focused-ion-beam patterning

C. Y. Liu; A. Datta; N. W. Liu; C. Y. Peng; Y. L. Wang

Appl. Phys. Lett. 84, 2509–2511 (2004) https://doi.org/10.1063/1.1691493

Abstract

View articletitled, Order–disorder transition of anodic alumina nanochannel arrays grown under the guidance of focused-ion-beam patterning

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Highly efficient sensitizing of erbium ion luminescence in size-controlled nanocrystalline ${Si/SiO}_{2}$ superlattice structures

V. Yu. Timoshenko; M. G. Lisachenko; B. V. Kamenev; O. A. Shalygina; P. K. Kashkarov; J. Heitmann; M. Schmidt; M. Zacharias

Appl. Phys. Lett. 84, 2512–2514 (2004) https://doi.org/10.1063/1.1690465

Abstract

View articletitled, Highly efficient sensitizing of erbium ion luminescence in size-controlled nanocrystalline <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Si/SiO</mi><mrow><mn>2</mn></mrow></msub></math> superlattice structures

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Excimer-laser-induced activation of Mg-doped GaN layers

Yow-Jon Lin; Wen-Fung Liu; Ching-Ting Lee

Appl. Phys. Lett. 84, 2515–2517 (2004) https://doi.org/10.1063/1.1695436

Abstract

View articletitled, Excimer-laser-induced activation of Mg-doped GaN layers

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Reduction of resistivity in Cu thin films by partial oxidation: Microstructural mechanisms

Walter L. Prater; Emily L. Allen; Wen-Y. Lee; Michael F. Toney; Jonathan Daniels; Jonathan A. Hedstrom

Appl. Phys. Lett. 84, 2518–2520 (2004) https://doi.org/10.1063/1.1691500

Abstract

View articletitled, Reduction of resistivity in Cu thin films by partial oxidation: Microstructural mechanisms

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Optical and electrical properties of amorphous ${Gd}_{x} {Ga}_{0.4−x} O_{0.6}$ films in ${Gd}_{x} {Ga}_{0.4−x} O_{0.6} / {Ga}_{2} O_{3}$ gate dielectric stacks on GaAs

M. Passlack; N. Medendorp; S. Zollner; R. Gregory; D. Braddock

Appl. Phys. Lett. 84, 2521–2523 (2004) https://doi.org/10.1063/1.1695445

Abstract

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Effect of nitrogen on the optical properties of InGaAsN $p-i-n$ structures grown on misoriented (111)B GaAs substrates

J. Miguel-Sánchez; A. Guzmán; J. M. Ulloa; A. Hierro; E. Muñoz

Appl. Phys. Lett. 84, 2524–2526 (2004) https://doi.org/10.1063/1.1695639

Abstract

View articletitled, Effect of nitrogen on the optical properties of InGaAsN <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">p-i-n</mi></math> structures grown on misoriented (111)B GaAs substrates

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Elastic modulus and resonance behavior of boron nitride nanotubes

Abhijit P. Suryavanshi; Min-Feng Yu; Jianguo Wen; Chengchun Tang; Yoshio Bando

Appl. Phys. Lett. 84, 2527–2529 (2004) https://doi.org/10.1063/1.1691189

Abstract

View articletitled, Elastic modulus and resonance behavior of boron nitride nanotubes

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Atomic-scale imaging of asymmetric Lomer dislocation cores at the Ge/Si(001) heterointerface

J. N. Stirman; P. A. Crozier; David J. Smith; F. Phillipp; G. Brill; S. Sivananthan

Appl. Phys. Lett. 84, 2530–2532 (2004) https://doi.org/10.1063/1.1697625

Abstract

View articletitled, Atomic-scale imaging of asymmetric Lomer dislocation cores at the Ge/Si(001) heterointerface

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Characterization of ${Si/Ge}_{x} {Si}_{1−x}$ structures by micro-Raman imaging

S. Nakashima; T. Yamamoto; A. Ogura; K. Uejima; T. Yamamoto

Appl. Phys. Lett. 84, 2533–2535 (2004) https://doi.org/10.1063/1.1695443

Abstract

View articletitled, Characterization of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Si/Ge</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Si</mi><mrow><mtext>1−x</mtext></mrow></msub></math> structures by micro-Raman imaging

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Enhanced optical properties of the GaAsN/GaAs quantum-well structure by the insertion of InAs monolayers

Q. Gao; H. H. Tan; C. Jagadish; B. Q. Sun; M. Gal; L. Ouyang; J. Zou

Appl. Phys. Lett. 84, 2536–2538 (2004) https://doi.org/10.1063/1.1697628

Abstract

View articletitled, Enhanced optical properties of the GaAsN/GaAs quantum-well structure by the insertion of InAs monolayers

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Enhanced photoluminescence at poly(3-octyl-thiophene)/ ${TiO}_{2}$ interfaces

Barbara van der Zanden; Roel van de Krol; Joop Schoonman; Albert Goossens

Appl. Phys. Lett. 84, 2539–2541 (2004) https://doi.org/10.1063/1.1699447

Abstract

View articletitled, Enhanced photoluminescence at poly(3-octyl-thiophene)/<math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">TiO</mi><mrow><mn>2</mn></mrow></msub></math> interfaces

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In situ high-resolution transmission electron microscopy observation of photodecomposition process of poly-hydrocarbons on catalytic ${TiO}_{2}$ films

Kenta Yoshida; Jun Yamasaki; Nobuo Tanaka

Appl. Phys. Lett. 84, 2542–2544 (2004) https://doi.org/10.1063/1.1689747

Abstract

View articletitled, In situ high-resolution transmission electron microscopy observation of photodecomposition process of poly-hydrocarbons on catalytic <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">TiO</mi><mrow><mn>2</mn></mrow></msub></math> films

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Remote hydrogen plasma doping of single crystal ZnO

Yuri M. Strzhemechny; Howard L. Mosbacker; David C. Look; Donald C. Reynolds; Cole W. Litton; Nelson Y. Garces; Nancy C. Giles; Larry E. Halliburton; Shigeru Niki; Leonard J. Brillson

Appl. Phys. Lett. 84, 2545–2547 (2004) https://doi.org/10.1063/1.1695440

Abstract

View articletitled, Remote hydrogen plasma doping of single crystal ZnO

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Observation of coherent interfacial optical phonons in GaInP/GaAs/GaInP single quantum wells

Y.-M. Chang; H. H. Lin; C. T. Chia; Y. F. Chen

Appl. Phys. Lett. 84, 2548–2550 (2004) https://doi.org/10.1063/1.1704859

Abstract

View articletitled, Observation of coherent interfacial optical phonons in GaInP/GaAs/GaInP single quantum wells

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Bulk-surface vacancy exchange on Pt(111)

Bene Poelsema; J. B. Hannon; N. C. Bartelt; G. L. Kellogg

Appl. Phys. Lett. 84, 2551–2553 (2004) https://doi.org/10.1063/1.1695434

Abstract

View articletitled, Bulk-surface vacancy exchange on Pt(111)

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Modification of GaN(0001) growth kinetics by Mg doping

E. Monroy; T. Andreev; P. Holliger; E. Bellet-Amalric; T. Shibata; M. Tanaka; B. Daudin

Appl. Phys. Lett. 84, 2554–2556 (2004) https://doi.org/10.1063/1.1705719

Abstract

View articletitled, Modification of GaN(0001) growth kinetics by Mg doping

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Low-band-gap, sublimable rhenium(I) diimine complex for efficient bulk heterojunction photovoltaic devices

H. L. Wong; L. S. M. Lam; K. W. Cheng; K. Y. K. Man; W. K. Chan; C. Y. Kwong; A. B. Djurišić

Appl. Phys. Lett. 84, 2557–2559 (2004) https://doi.org/10.1063/1.1682676

Abstract

View articletitled, Low-band-gap, sublimable rhenium(I) diimine complex for efficient bulk heterojunction photovoltaic devices

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Low-resistance tunnel junctions on GaAs substrates using GaInNAs

D. E. Mars; Y.-L. Chang; M. H. Leary; S. D. Roh; D. R. Chamberlin

Appl. Phys. Lett. 84, 2560–2562 (2004) https://doi.org/10.1063/1.1691193

Abstract

View articletitled, Low-resistance tunnel junctions on GaAs substrates using GaInNAs

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High-quality single-crystal Ge on insulator by liquid-phase epitaxy on Si substrates

Yaocheng Liu; Michael D. Deal; James D. Plummer

Appl. Phys. Lett. 84, 2563–2565 (2004) https://doi.org/10.1063/1.1691175

Abstract

View articletitled, High-quality single-crystal Ge on insulator by liquid-phase epitaxy on Si substrates

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Fabrication of GaN cantilevers on silicon substrates for microelectromechanical devices

S. Davies; T. S. Huang; M. H. Gass; A. J. Papworth; T. B. Joyce; P. R. Chalker

Appl. Phys. Lett. 84, 2566–2568 (2004) https://doi.org/10.1063/1.1695196

Abstract

View articletitled, Fabrication of GaN cantilevers on silicon substrates for microelectromechanical devices

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Acoustic manipulation of electron–hole pairs in GaAs at room temperature

M. M. de Lima, Jr.; R. Hey; J. A. H. Stotz; P. V. Santos

Appl. Phys. Lett. 84, 2569–2571 (2004) https://doi.org/10.1063/1.1695636

Abstract

View articletitled, Acoustic manipulation of electron–hole pairs in GaAs at room temperature

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Fabrication and characteristics of $C_{84}$ fullerene field-effect transistors

Kana Shibata; Yoshihiro Kubozono; Takayoshi Kanbara; Tomoko Hosokawa; Akihiko Fujiwara; Yasuhiro Ito; Hisanori Shinohara

Appl. Phys. Lett. 84, 2572–2574 (2004) https://doi.org/10.1063/1.1695193

Abstract

View articletitled, Fabrication and characteristics of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">C</mi><mrow><mn>84</mn></mrow></msub></math> fullerene field-effect transistors

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Influence of Al doping on lattice strain and electrical properties of epitaxial GaN films grown by metalorganic chemical vapor deposition on ${Al}_{2} O_{3}$ substrate

Jae Kyeong Jeong; Jung-Hae Choi; Cheol Seong Hwang; Hyeong Joon Kim; Jae-Hoon Lee; Jung-Hee Lee; Chang-Soo Kim

Appl. Phys. Lett. 84, 2575–2577 (2004) https://doi.org/10.1063/1.1702135

Abstract

View articletitled, Influence of Al doping on lattice strain and electrical properties of epitaxial GaN films grown by metalorganic chemical vapor deposition on <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>3</mn></mrow></msub></math> substrate

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Effect of nucleation layer on the magnetic properties of GaMnN

G. Thaler; R. Frazier; B. Gila; J. Stapleton; M. Davidson; C. R. Abernathy; S. J. Pearton; Carlos Segre

Appl. Phys. Lett. 84, 2578–2580 (2004) https://doi.org/10.1063/1.1695207

Abstract

View articletitled, Effect of nucleation layer on the magnetic properties of GaMnN

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A distributed charge storage with ${GeO}_{2}$ nanodots

T. C. Chang; S. T. Yan; C. H. Hsu; M. T. Tang; J. F. Lee; Y. H. Tai; P. T. Liu; S. M. Sze

Appl. Phys. Lett. 84, 2581–2583 (2004) https://doi.org/10.1063/1.1697627

Abstract

View articletitled, A distributed charge storage with <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">GeO</mi><mrow><mn>2</mn></mrow></msub></math> nanodots

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Modified transmission line model and its application to aluminum ohmic contacts with n-type GaN

N. C. Chen; P. H. Chang; A. P. Chiu; M. C. Wang; W. S. Feng; G. M. Wu; C. F. Shih; K. S. Liu

Appl. Phys. Lett. 84, 2584–2586 (2004) https://doi.org/10.1063/1.1704855

Abstract

View articletitled, Modified transmission line model and its application to aluminum ohmic contacts with n-type GaN

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MAGNETISM AND SUPERCONDUCTIVITY

High-speed operation of quasi-one junction superconducting quantum interference device based on high- $T_{c}$ multilayer technology

H. Sugiyama; H. Wakana; S. Adachi; Y. Tarutani; K. Tanabe

Appl. Phys. Lett. 84, 2587–2589 (2004) https://doi.org/10.1063/1.1690496

Abstract

View articletitled, High-speed operation of quasi-one junction superconducting quantum interference device based on high-<math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi>T</mi><mrow><mi>c</mi></mrow></msub></math> multilayer technology

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Magnetic anisotropy control of ${SrRuO}_{3}$ films by tunable epitaxial strain

C. U. Jung; Hiroyuki Yamada; M. Kawasaki; Y. Tokura

Appl. Phys. Lett. 84, 2590–2592 (2004) https://doi.org/10.1063/1.1695195

Abstract

View articletitled, Magnetic anisotropy control of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SrRuO</mi><mrow><mn>3</mn></mrow></msub></math> films by tunable epitaxial strain

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Giant planar Hall effect in colossal magnetoresistive ${La}_{0.84} {Sr}_{0.16} {MnO}_{3}$ thin films

Y. Bason; L. Klein; J.-B. Yau; X. Hong; C. H. Ahn

Appl. Phys. Lett. 84, 2593–2595 (2004) https://doi.org/10.1063/1.1695197

Abstract

View articletitled, Giant planar Hall effect in colossal magnetoresistive <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">La</mi><mrow><mtext>0.84</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Sr</mi><mrow><mtext>0.16</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">MnO</mi><mrow><mn>3</mn></mrow></msub></math> thin films

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High-coercivity Co-ferrite thin films on $(100)- {SiO}_{2}$ substrate

Y. C. Wang; J. Ding; J. B. Yi; B. H. Liu; T. Yu; Z. X. Shen

Appl. Phys. Lett. 84, 2596–2598 (2004) https://doi.org/10.1063/1.1695438

Abstract

View articletitled, High-coercivity Co-ferrite thin films on <math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">(100)-</mtext><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mn>2</mn></mrow></msub></math> substrate

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On the origin of spin loss in GaMnN/InGaN light-emitting diodes

I. A. Buyanova; M. Izadifard; W. M. Chen; J. Kim; F. Ren; G. Thaler; C. R. Abernathy; S. J. Pearton; C.-C. Pan; G.-T. Chen; J.-I. Chyi; J. M. Zavada

Appl. Phys. Lett. 84, 2599–2601 (2004) https://doi.org/10.1063/1.1695100

Abstract

View articletitled, On the origin of spin loss in GaMnN/InGaN light-emitting diodes

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Ferromagnetism at room temperature with a large magnetic moment in anatase V-doped ${TiO}_{2}$ thin films

Nguyen Hoa Hong; Joe Sakai; Awatef Hassini

Appl. Phys. Lett. 84, 2602–2604 (2004) https://doi.org/10.1063/1.1703848

Abstract

View articletitled, Ferromagnetism at room temperature with a large magnetic moment in anatase V-doped <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">TiO</mi><mrow><mn>2</mn></mrow></msub></math> thin films

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On the feasibility of “measuring” crystal field parameters in a rotating-sample magnetometer

M. D. Kuz’min

Appl. Phys. Lett. 84, 2605–2607 (2004) https://doi.org/10.1063/1.1699470

Abstract

View articletitled, On the feasibility of “measuring” crystal field parameters in a rotating-sample magnetometer

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Spatial distribution and electronic state of Co in epitaxial anatase ${Co}_{x} {Ti}_{1−x} O_{2}$ thin films grown by reactive sputtering

B.-S. Jeong; Y. W. Heo; D. P. Norton; J. G. Kelly; R. Rairigh; A. F. Hebard; J. D. Budai; Y. D. Park

Appl. Phys. Lett. 84, 2608–2610 (2004) https://doi.org/10.1063/1.1691499

Abstract

View articletitled, Spatial distribution and electronic state of Co in epitaxial anatase <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Co</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ti</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>2</mn></mrow></msub></math> thin films grown by reactive sputtering

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Manganite-based heterojunction and its photovoltaic effects

J. R. Sun; C. M. Xiong; B. G. Shen; P. Y. Wang; Y. X. Weng

Appl. Phys. Lett. 84, 2611–2613 (2004) https://doi.org/10.1063/1.1702128

Abstract

View articletitled, Manganite-based heterojunction and its photovoltaic effects

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DIELECTRICS AND FERROELECTRICITY

Lithography-modulated self-assembly of small ferroelectric $Pb (Zr,Ti) O_{3}$ single crystals

S. Bühlmann; P. Muralt; S. Von Allmen

Appl. Phys. Lett. 84, 2614–2616 (2004) https://doi.org/10.1063/1.1690873

Abstract

View articletitled, Lithography-modulated self-assembly of small ferroelectric <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">Pb</mi><mi xmlns="">(</mi><mi mathvariant="normal" xmlns="">Zr,Ti</mi><mi xmlns="">)</mi><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>3</mn></mrow></msub></math> single crystals

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Bias-temperature stability of ultrathin parylene-capped dielectrics: influence of surface oxygen on copper ion diffusion

Jay J. Senkevich; Pei-I. Wang; Chris J. Wiegand; T.-M. Lu

Appl. Phys. Lett. 84, 2617–2619 (2004) https://doi.org/10.1063/1.1691488

Abstract

View articletitled, Bias-temperature stability of ultrathin parylene-capped dielectrics: influence of surface oxygen on copper ion diffusion

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Thermal stability of ${LaAlO}_{3} / Si$ deposited by laser molecular-beam epitaxy

X. B. Lu; X. Zhang; R. Huang; H. B. Lu; Z. H. Chen; W. F. Xiang; M. He; B. L. Cheng; H. W. Zhou; X. P. Wang; C. Z. Wang; B. Y. Nguyen

Appl. Phys. Lett. 84, 2620–2622 (2004) https://doi.org/10.1063/1.1690880

Abstract

View articletitled, Thermal stability of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">LaAlO</mi><mrow><mn>3</mn></mrow></msub><mi xmlns="">/</mi><mi mathvariant="normal" xmlns="">Si</mi></math> deposited by laser molecular-beam epitaxy

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Forced polarization of α-sapphire induced by coated ${LiNbO}_{3}$ and ${LiTaO}_{3}$ films

X. Yang; X. L. Wu; Y. Feng; J. Li; M. Jiang

Appl. Phys. Lett. 84, 2623–2625 (2004) https://doi.org/10.1063/1.1703836

Abstract

View articletitled, Forced polarization of α-sapphire induced by coated <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">LiNbO</mi><mrow><mn>3</mn></mrow></msub></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">LiTaO</mi><mrow><mn>3</mn></mrow></msub></math> films

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Finite element modeling of piezoresponse in nanostructured ferroelectric films

J.-H. Li; L. Chen; V. Nagarajan; R. Ramesh; A. L. Roytburd

Appl. Phys. Lett. 84, 2626–2628 (2004) https://doi.org/10.1063/1.1695641

Abstract

View articletitled, Finite element modeling of piezoresponse in nanostructured ferroelectric films

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Time-dependent dielectric breakdown of hydrogenated silicon carbon nitride thin films under the influence of copper ions

Hao Cui; Peter A. Burke

Appl. Phys. Lett. 84, 2629–2631 (2004) https://doi.org/10.1063/1.1703839

Abstract

View articletitled, Time-dependent dielectric breakdown of hydrogenated silicon carbon nitride thin films under the influence of copper ions

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NANOSCALE SCIENCE AND DESIGN

Raman scattering of folded acoustic phonons in self-assembled Si/Ge dot superlattices

P. H. Tan; D. Bougeard; G. Abstreiter; K. Brunner

Appl. Phys. Lett. 84, 2632–2634 (2004) https://doi.org/10.1063/1.1691171

Abstract

View articletitled, Raman scattering of folded acoustic phonons in self-assembled Si/Ge dot superlattices

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Visible photoluminescence in ZnO tetrapod and multipod structures

Aleksandra B. Djurišić; Yu Hang Leung; Wallace C. H. Choy; Kok Wai Cheah; Wai Kin Chan

Appl. Phys. Lett. 84, 2635–2637 (2004) https://doi.org/10.1063/1.1695633

Abstract

View articletitled, Visible photoluminescence in ZnO tetrapod and multipod structures

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Thermal conductivities of individual tin dioxide nanobelts

Li Shi; Qing Hao; Choongho Yu; Natalio Mingo; Xiangyang Kong; Z. L. Wang

Appl. Phys. Lett. 84, 2638–2640 (2004) https://doi.org/10.1063/1.1697622

Abstract

View articletitled, Thermal conductivities of individual tin dioxide nanobelts

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Structure and photoluminescence of ZnSe nanoribbons grown by metal organic chemical vapor deposition

X. T. Zhang; K. M. Ip; Z. Liu; Y. P. Leung; Quan Li; S. K. Hark

Appl. Phys. Lett. 84, 2641–2643 (2004) https://doi.org/10.1063/1.1695096

Abstract

View articletitled, Structure and photoluminescence of ZnSe nanoribbons grown by metal organic chemical vapor deposition

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Nanocrystal cleaving

Wei-Qiang Han; A. Zettl

Appl. Phys. Lett. 84, 2644–2645 (2004) https://doi.org/10.1063/1.1695635

Abstract

View articletitled, Nanocrystal cleaving

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Self-assembly of carbon nanohelices: Characteristics and field electron emission properties

Guangyu Zhang; Xin Jiang; Enge Wang

Appl. Phys. Lett. 84, 2646–2648 (2004) https://doi.org/10.1063/1.1695198

Abstract

View articletitled, Self-assembly of carbon nanohelices: Characteristics and field electron emission properties

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Carbon nanotubes-zeolite complex: A Li-intercalated compound with high storage capacity

H. J. Liu; Z. M. Li; Q. Liang; Z. K. Tang; C. T. Chan

Appl. Phys. Lett. 84, 2649–2651 (2004) https://doi.org/10.1063/1.1695640

Abstract

View articletitled, Carbon nanotubes-zeolite complex: A Li-intercalated compound with high storage capacity

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Thermoelectric figure of merit and maximum power factor in III–V semiconductor nanowires

N. Mingo

Appl. Phys. Lett. 84, 2652–2654 (2004) https://doi.org/10.1063/1.1695629

Abstract

View articletitled, Thermoelectric figure of merit and maximum power factor in III–V semiconductor nanowires

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Tunable multiple plasmon resonance wavelengths response from multicomponent polymer-metal nanocomposite systems

A. Biswas; O. C. Aktas; U. Schürmann; U. Saeed; V. Zaporojtchenko; F. Faupel; T. Strunskus

Appl. Phys. Lett. 84, 2655–2657 (2004) https://doi.org/10.1063/1.1697626

Abstract

View articletitled, Tunable multiple plasmon resonance wavelengths response from multicomponent polymer-metal nanocomposite systems

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Self-catalytic synthesis and photoluminescence of ZnO nanostructures on ZnO nanocrystal substrates

W. D. Yu; X. M. Li; X. D. Gao

Appl. Phys. Lett. 84, 2658–2660 (2004) https://doi.org/10.1063/1.1695097

Abstract

View articletitled, Self-catalytic synthesis and photoluminescence of ZnO nanostructures on ZnO nanocrystal substrates

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Soft x-ray magnetic scattering from ordered EuSe nanoislands

T. U. Schülli; R. T. Lechner; J. Stangl; G. Springholz; G. Bauer; S. Dhesi; P. Bencok

Appl. Phys. Lett. 84, 2661–2663 (2004) https://doi.org/10.1063/1.1699469

Abstract

View articletitled, Soft x-ray magnetic scattering from ordered EuSe nanoislands

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Realization of InAs-based two-dimensional artificial lattice by selective area metalorganic vapor‐phase epitaxy

Premila Mohan; Junichi Motohisa; Takashi Fukui

Appl. Phys. Lett. 84, 2664–2666 (2004) https://doi.org/10.1063/1.1697645

Abstract

View articletitled, Realization of InAs-based two-dimensional artificial lattice by selective area metalorganic vapor‐phase epitaxy

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Origin of luminescence from ${Si}^{-}$ -implanted $(1 \bar{1} 02) {Al}_{2} O_{3}$

C. J. Park; Y. H. Kwon; Y. H. Lee; T. W. Kang; H. Y. Cho; Sung Kim; Suk-Ho Choi; R. G. Elliman

Appl. Phys. Lett. 84, 2667–2669 (2004) https://doi.org/10.1063/1.1699471

Abstract

View articletitled, Origin of luminescence from <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">Si</mi><mrow><mi>−</mi></mrow></msup></math>-implanted <math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">(1</mtext><mover accent="true" xmlns=""><mrow><mn>1</mn></mrow><mo stretchy="true">¯</mo></mover><mtext xmlns="">02) </mtext><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>3</mn></mrow></msub></math>

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Relaxation of nanopatterns on Nb-doped ${SrTiO}_{3}$ surface

Run-Wei Li; Teruo Kanki; Motoyuki Hirooka; Akihiko Takagi; Takuya Matsumoto; Hidekazu Tanaka; Tomoji Kawai

Appl. Phys. Lett. 84, 2670–2672 (2004) https://doi.org/10.1063/1.1699478

Abstract

View articletitled, Relaxation of nanopatterns on Nb-doped <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SrTiO</mi><mrow><mn>3</mn></mrow></msub></math> surface

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DEVICE PHYSICS

Organic electronics on paper

Florian Eder; Hagen Klauk; Marcus Halik; Ute Zschieschang; Günter Schmid; Christine Dehm

Appl. Phys. Lett. 84, 2673–2675 (2004) https://doi.org/10.1063/1.1690870

Abstract

View articletitled, Organic electronics on paper

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Amorphous boron carbon nitride as a $p H$ sensor

C. L. Li; B. R. Huang; S. Chattopadhyay; K. H. Chen; L. C. Chen

Appl. Phys. Lett. 84, 2676–2678 (2004) https://doi.org/10.1063/1.1691195

Abstract

View articletitled, Amorphous boron carbon nitride as a <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">p</mi><mi mathvariant="normal" xmlns="">H</mi></math> sensor

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$1.4 μ m$ band electroluminescence from organic light-emitting diodes based on thulium complexes

F. X. Zang; Z. R. Hong; W. L. Li; M. T. Li; X. Y. Sun

Appl. Phys. Lett. 84, 2679–2681 (2004) https://doi.org/10.1063/1.1695098

Abstract

View articletitled, <math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">1.4 μ</mtext><mi mathvariant="normal" xmlns="">m</mi></math> band electroluminescence from organic light-emitting diodes based on thulium complexes

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Compositionally graded contact layers in quantum-well infrared photodetectors

J. W. Little; R. P. Leavitt

Appl. Phys. Lett. 84, 2682–2684 (2004) https://doi.org/10.1063/1.1697643

Abstract

View articletitled, Compositionally graded contact layers in quantum-well infrared photodetectors

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Enhancement-mode thin-film field-effect transistor using phosphorus-doped (Zn,Mg)O channel

Y. Kwon; Y. Li; Y. W. Heo; M. Jones; P. H. Holloway; D. P. Norton; Z. V. Park; S. Li

Appl. Phys. Lett. 84, 2685–2687 (2004) https://doi.org/10.1063/1.1695437

Abstract

View articletitled, Enhancement-mode thin-film field-effect transistor using phosphorus-doped (Zn,Mg)O channel

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Three-terminal Si-based negative differential resistance circuit element with adjustable peak-to-valley current ratios using a monolithic vertical integration

Sung-Yong Chung; Niu Jin; Paul R. Berger; Ronghua Yu; Phillip E. Thompson; Roger Lake; Sean L. Rommel; Santosh K. Kurinec

Appl. Phys. Lett. 84, 2688–2690 (2004) https://doi.org/10.1063/1.1690109

Abstract

View articletitled, Three-terminal Si-based negative differential resistance circuit element with adjustable peak-to-valley current ratios using a monolithic vertical integration

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INTERDISCIPLINARY AND GENERAL PHYSICS

Stable differential phase shift quantum key distribution with a key creation efficiency of 3/4

Xiuliang Chen; Chunyuan Zhou; Guang Wu; Heping Zeng

Appl. Phys. Lett. 84, 2691–2693 (2004) https://doi.org/10.1063/1.1690494

Abstract

View articletitled, Stable differential phase shift quantum key distribution with a key creation efficiency of 3/4

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Microfabricated alkali atom vapor cells

Li-Anne Liew; Svenja Knappe; John Moreland; Hugh Robinson; Leo Hollberg; John Kitching

Appl. Phys. Lett. 84, 2694–2696 (2004) https://doi.org/10.1063/1.1691490

Abstract

View articletitled, Microfabricated alkali atom vapor cells

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True molecular resolution in tapping-mode atomic force microscopy with high-resolution probes

Dmitry Klinov; Sergei Magonov

Appl. Phys. Lett. 84, 2697–2699 (2004) https://doi.org/10.1063/1.1697629

Abstract

View articletitled, True molecular resolution in tapping-mode atomic force microscopy with high-resolution probes

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Thin-film heterostructure solid oxide fuel cells

X. Chen; N. J. Wu; L. Smith; A. Ignatiev

Appl. Phys. Lett. 84, 2700–2702 (2004) https://doi.org/10.1063/1.1697623

Abstract

View articletitled, Thin-film heterostructure solid oxide fuel cells

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Near-field three-dimensional coherent imaging: Theory and simulations

Seth D. Silverstein; Yibin Zheng

Appl. Phys. Lett. 84, 2703–2705 (2004) https://doi.org/10.1063/1.1695628

Abstract

View articletitled, Near-field three-dimensional coherent imaging: Theory and simulations

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ERRATA

Erratum: “Tunneling-electron-induced molecular luminescence from a nanoscale layer of organic molecules on metal substrates” [Appl. Phys. Lett. 84, 969 (2004)]

X.-L. Guo; Z.-C. Dong; A. S. Trifonov; S. Yokoyama; S. Mashiko; T. Okamoto

Appl. Phys. Lett. 84, 2706 (2004) https://doi.org/10.1063/1.1695627

View articletitled, Erratum: “Tunneling-electron-induced molecular luminescence from a nanoscale layer of organic molecules on metal substrates” [Appl. Phys. Lett. 84, 969 (2004)]

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Issues

LASERS, OPTICS, AND OPTOELECTRONICS

PLASMAS AND ELECTRICAL DISCHARGES

STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

ELECTRONIC TRANSPORT AND SEMICONDUCTORS

MAGNETISM AND SUPERCONDUCTIVITY

DIELECTRICS AND FERROELECTRICITY

NANOSCALE SCIENCE AND DESIGN

DEVICE PHYSICS

INTERDISCIPLINARY AND GENERAL PHYSICS

ERRATA

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