Skip Nav Destination

Issues

Select Decade

Select Year

Issue

LASERS, OPTICS, AND OPTOELECTRONICS

Rapid photon flux switching in two-dimensional photonic crystals

X. Wang; K. Kempa; Z. F. Ren; B. Kimball

Appl. Phys. Lett. 84, 1817–1819 (2004) https://doi.org/10.1063/1.1667593

Abstract

View articletitled, Rapid photon flux switching in two-dimensional photonic crystals

Open the PDF for in another window

Control of optical polarization anisotropy in edge emitting luminescence of InAs/GaAs self-assembled quantum dots

P. Jayavel; H. Tanaka; T. Kita; O. Wada; H. Ebe; M. Sugawara; J. Tatebayashi; Y. Arakawa; Y. Nakata; T. Akiyama

Appl. Phys. Lett. 84, 1820–1822 (2004) https://doi.org/10.1063/1.1675923

Abstract

View articletitled, Control of optical polarization anisotropy in edge emitting luminescence of InAs/GaAs self-assembled quantum dots

Open the PDF for in another window

Enhanced electro-optic effect in GaInAsP–InP three-step quantum wells

H. Mohseni; H. An; Z. A. Shellenbarger; M. H. Kwakernaak; J. H. Abeles

Appl. Phys. Lett. 84, 1823–1825 (2004) https://doi.org/10.1063/1.1682699

Abstract

View articletitled, Enhanced electro-optic effect in GaInAsP–InP three-step quantum wells

Open the PDF for in another window

Theoretical study of Auger recombination in a GaInNAs $1.3 μ m$ quantum well laser structure

A. D. Andreev; E. P. O’Reilly

Appl. Phys. Lett. 84, 1826–1828 (2004) https://doi.org/10.1063/1.1664033

Abstract

View articletitled, Theoretical study of Auger recombination in a GaInNAs <math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">1.3 μ</mtext><mi mathvariant="normal" xmlns="">m</mi></math> quantum well laser structure

Open the PDF for in another window

Measurement of orientation dependent stress-optic coefficient of GaAs single crystals

H. J. Peng; S. P. Wong; H. P. Ho; Shounan Zhao

Appl. Phys. Lett. 84, 1829–1831 (2004) https://doi.org/10.1063/1.1675938

Abstract

View articletitled, Measurement of orientation dependent stress-optic coefficient of GaAs single crystals

Open the PDF for in another window

Near-field optical study of AlGaN/GaN quantum-well waveguide

J. Shakya; J. Y. Lin; H. X. Jiang

Appl. Phys. Lett. 84, 1832–1834 (2004) https://doi.org/10.1063/1.1675936

Abstract

View articletitled, Near-field optical study of AlGaN/GaN quantum-well waveguide

Open the PDF for in another window

Surface plasmon polariton propagation around bends at a metal–dielectric interface

K. Hasegawa; J. U. Nöckel; M. Deutsch

Appl. Phys. Lett. 84, 1835–1837 (2004) https://doi.org/10.1063/1.1675940

Abstract

View articletitled, Surface plasmon polariton propagation around bends at a metal–dielectric interface

Open the PDF for in another window

Microfluidic tunable photonic band-gap device

P. Domachuk; H. C. Nguyen; B. J. Eggleton; M. Straub; M. Gu

Appl. Phys. Lett. 84, 1838–1840 (2004) https://doi.org/10.1063/1.1667592

Abstract

View articletitled, Microfluidic tunable photonic band-gap device

Open the PDF for in another window

High-power AlGaInP light-emitting diodes with metal substrates fabricated by wafer bonding

Wei Chih Peng; YewChung Sermon Wu

Appl. Phys. Lett. 84, 1841–1843 (2004) https://doi.org/10.1063/1.1682696

Abstract

View articletitled, High-power AlGaInP light-emitting diodes with metal substrates fabricated by wafer bonding

Open the PDF for in another window

Electrically tunable lasing based on defect mode in one-dimensional photonic crystal with conducting polymer and liquid crystal defect layer

Ryotaro Ozaki; Yuko Matsuhisa; Masanori Ozaki; Katsumi Yoshino

Appl. Phys. Lett. 84, 1844–1846 (2004) https://doi.org/10.1063/1.1686891

Abstract

View articletitled, Electrically tunable lasing based on defect mode in one-dimensional photonic crystal with conducting polymer and liquid crystal defect layer

Open the PDF for in another window

STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Coherent grazing exit x-ray scattering geometry for probing the structure of thin films

Franz Pfeiffer; Wei Zhang; Ian K. Robinson

Appl. Phys. Lett. 84, 1847–1849 (2004) https://doi.org/10.1063/1.1669061

Abstract

View articletitled, Coherent grazing exit x-ray scattering geometry for probing the structure of thin films

Open the PDF for in another window

Comparison of structure and properties of femtosecond and nanosecond laser-structured silicon

C. H. Crouch; J. E. Carey; J. M. Warrender; M. J. Aziz; E. Mazur; F. Y. Génin

Appl. Phys. Lett. 84, 1850–1852 (2004) https://doi.org/10.1063/1.1667004

Abstract

View articletitled, Comparison of structure and properties of femtosecond and nanosecond laser-structured silicon

Open the PDF for in another window

Local self-organization of islands in embedded nanodot systems

Jianjun Zhang; Kaiwang Zhang; Jianxin Zhong

Appl. Phys. Lett. 84, 1853–1855 (2004) https://doi.org/10.1063/1.1669079

Abstract

View articletitled, Local self-organization of islands in embedded nanodot systems

Open the PDF for in another window

Formation of spinel from olivine

Zongwen Liu; Patrick M. Kelly; John Drennan; Peter Mora; Hisao Kanda

Appl. Phys. Lett. 84, 1856–1858 (2004) https://doi.org/10.1063/1.1675939

Abstract

View articletitled, Formation of spinel from olivine

Open the PDF for in another window

Nonradiative recombination centers in Ga(As,N) and their annealing behavior studied by Raman spectroscopy

M. Ramsteiner; D. S. Jiang; J. S. Harris; K. H. Ploog

Appl. Phys. Lett. 84, 1859–1861 (2004) https://doi.org/10.1063/1.1669070

Abstract

View articletitled, Nonradiative recombination centers in Ga(As,N) and their annealing behavior studied by Raman spectroscopy

Open the PDF for in another window

Role of fluorine in suppressing boron transient enhanced diffusion in preamorphized Si

G. Impellizzeri; J. H. R. dos Santos; S. Mirabella; F. Priolo; E. Napolitani; A. Carnera

Appl. Phys. Lett. 84, 1862–1864 (2004) https://doi.org/10.1063/1.1675935

Abstract

View articletitled, Role of fluorine in suppressing boron transient enhanced diffusion in preamorphized Si

Open the PDF for in another window

Reflectance anisotropy of ${Gd}_{5} {Si}_{2} {Ge}_{2}$ and ${Tb}_{5} {Si}_{2.2} {Ge}_{1.8}$

S. J. Lee; J. M. Park; J. E. Snyder; D. C. Jiles; D. L. Schlagel; T. A. Lograsso; A. O. Pecharsky; D. W. Lynch

Appl. Phys. Lett. 84, 1865–1867 (2004) https://doi.org/10.1063/1.1687463

Abstract

View articletitled, Reflectance anisotropy of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Gd</mi><mrow><mn>5</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Si</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ge</mi><mrow><mn>2</mn></mrow></msub></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Tb</mi><mrow><mn>5</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Si</mi><mrow><mtext>2.2</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ge</mi><mrow><mtext>1.8</mtext></mrow></msub></math>

Open the PDF for in another window

Long wavelength emission in ${In}_{x} {Ga}_{1−x} As$ quantum dot structures grown in a GaAs barrier by metalorganic chemical vapor deposition

A. Passaseo; V. Tasco; M. De Giorgi; M. T. Todaro; M. De Vittorio; R. Cingolani

Appl. Phys. Lett. 84, 1868–1870 (2004) https://doi.org/10.1063/1.1652255

Abstract

View articletitled, Long wavelength emission in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">In</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>1−x</mtext></mrow></msub><mi mathvariant="normal" xmlns="">As</mi></math> quantum dot structures grown in a GaAs barrier by metalorganic chemical vapor deposition

Open the PDF for in another window

Pressure effect of glass transition temperature in ${Zr}_{46.8} {Ti}_{8.2} {Cu}_{7.5} {Ni}_{10} {Be}_{27.5}$ bulk metallic glass

J. Z. Jiang; W. Roseker; M. Sikorski; Q. P. Cao; F. Xu

Appl. Phys. Lett. 84, 1871–1873 (2004) https://doi.org/10.1063/1.1675937

Abstract

View articletitled, Pressure effect of glass transition temperature in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Zr</mi><mrow><mtext>46.8</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ti</mi><mrow><mtext>8.2</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Cu</mi><mrow><mtext>7.5</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ni</mi><mrow><mn>10</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Be</mi><mrow><mtext>27.5</mtext></mrow></msub></math> bulk metallic glass

Open the PDF for in another window

Type I to type II transition at the interface between random and ordered domains of ${Al}_{x} {Ga}_{1−x} N$ alloys

S. V. Dudiy; Alex Zunger

Appl. Phys. Lett. 84, 1874–1876 (2004) https://doi.org/10.1063/1.1687464

Abstract

View articletitled, Type I to type II transition at the interface between random and ordered domains of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>1−x</mtext></mrow></msub><mi mathvariant="normal" xmlns="">N</mi></math> alloys

Open the PDF for in another window

Formation of ultrahigh-density InAs/AlAs quantum dots by metalorganic chemical vapor deposition

Se-Ki Park; Jun Tatebayashi; Yasuhiko Arakawa

Appl. Phys. Lett. 84, 1877–1879 (2004) https://doi.org/10.1063/1.1687465

Abstract

View articletitled, Formation of ultrahigh-density InAs/AlAs quantum dots by metalorganic chemical vapor deposition

Open the PDF for in another window

Reduced photorefraction in hafnium-doped single-domain and periodically poled lithium niobate crystals

Edvard P. Kokanyan; Luca Razzari; Ilaria Cristiani; Vittorio Degiorgio; John B. Gruber

Appl. Phys. Lett. 84, 1880–1882 (2004) https://doi.org/10.1063/1.1687460

Abstract

View articletitled, Reduced photorefraction in hafnium-doped single-domain and periodically poled lithium niobate crystals

Open the PDF for in another window

Thermal conductivity of nanoporous bismuth thin films

D. W. Song; W.-N. Shen; B. Dunn; C. D. Moore; M. S. Goorsky; T. Radetic; R. Gronsky; G. Chen

Appl. Phys. Lett. 84, 1883–1885 (2004) https://doi.org/10.1063/1.1682679

Abstract

View articletitled, Thermal conductivity of nanoporous bismuth thin films

Open the PDF for in another window

Investigations of V-shaped defects and photoluminescence of thin GaN-rich GaNP layers grown on a GaN epilayer by metalorganic chemical vapor deposition

H. D. Li; M. Tsukihara; Y. Naoi; Y. B. Lee; S. Sakai

Appl. Phys. Lett. 84, 1886–1888 (2004) https://doi.org/10.1063/1.1687462

Abstract

View articletitled, Investigations of V-shaped defects and photoluminescence of thin GaN-rich GaNP layers grown on a GaN epilayer by metalorganic chemical vapor deposition

Open the PDF for in another window

“Umbrella”-like precipitates in nitrogen-doped Czochralski silicon wafers

A. Kvit; A. Karoui; G. Duscher; G. A. Rozgonyi

Appl. Phys. Lett. 84, 1889–1891 (2004) https://doi.org/10.1063/1.1669069

Abstract

View articletitled, “Umbrella”-like precipitates in nitrogen-doped Czochralski silicon wafers

Open the PDF for in another window

High quality InN/GaN heterostructures grown by migration enhanced metalorganic chemical vapor deposition

R. S. Qhalid Fareed; R. Jain; R. Gaska; M. S. Shur; J. Wu; W. Walukiewicz; M. Asif Khan

Appl. Phys. Lett. 84, 1892–1894 (2004) https://doi.org/10.1063/1.1686889

Abstract

View articletitled, High quality InN/GaN heterostructures grown by migration enhanced metalorganic chemical vapor deposition

Open the PDF for in another window

ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Mechanism of $p$ -type-to- $n$ -type conductivity conversion in boron-doped diamond

Ying Dai; Dadi Dai; Donghong Liu; Shenghao Han; Baibiao Huang

Appl. Phys. Lett. 84, 1895–1897 (2004) https://doi.org/10.1063/1.1650909

Abstract

View articletitled, Mechanism of <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">p</mi></math>-type-to-<math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">n</mi></math>-type conductivity conversion in boron-doped diamond

Open the PDF for in another window

Synthesis and electrical properties of freestanding film of azobenzene side-chain polyaniline

Yunze Long; Zhaojia Chen; Kun Huang; Meixiang Wan

Appl. Phys. Lett. 84, 1898–1900 (2004) https://doi.org/10.1063/1.1687457

Abstract

View articletitled, Synthesis and electrical properties of freestanding film of azobenzene side-chain polyaniline

Open the PDF for in another window

Oligothiophene- $S,S$ -dioxides as a class of electron-acceptor materials for organic photovoltaics

N. Camaioni; G. Ridolfi; V. Fattori; L. Favaretto; G. Barbarella

Appl. Phys. Lett. 84, 1901–1903 (2004) https://doi.org/10.1063/1.1682681

Abstract

View articletitled, Oligothiophene-<math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">S,S</mi></math>-dioxides as a class of electron-acceptor materials for organic photovoltaics

Open the PDF for in another window

Contacts to p-type ZnMgO

Suku Kim; B. S. Kang; F. Ren; Y. W. Heo; K. Ip; D. P. Norton; S. J. Pearton

Appl. Phys. Lett. 84, 1904–1906 (2004) https://doi.org/10.1063/1.1669082

Abstract

View articletitled, Contacts to p-type ZnMgO

Open the PDF for in another window

MAGNETISM AND SUPERCONDUCTIVITY

Scanning tunneling spectroscopy under pulsed spin injection

J. Ngai; Y. C. Tseng; P. Morales; V. Pribiag; J. Y. T. Wei; F. Chen; D. D. Perovic

Appl. Phys. Lett. 84, 1907–1909 (2004) https://doi.org/10.1063/1.1667281

Abstract

View articletitled, Scanning tunneling spectroscopy under pulsed spin injection

Open the PDF for in another window

Experimental evidence of multiple stable locations for a domain wall trapped by a submicron notch

D. Lacour; J. A. Katine; L. Folks; T. Block; J. R. Childress; M. J. Carey; B. A. Gurney

Appl. Phys. Lett. 84, 1910–1912 (2004) https://doi.org/10.1063/1.1686893

Abstract

View articletitled, Experimental evidence of multiple stable locations for a domain wall trapped by a submicron notch

Open the PDF for in another window

DIELECTRICS AND FERROELECTRICITY

Densification and improved electrical properties of pulse-deposited films via in situ modulated temperature annealing

J. F. Conley, Jr.; Y. Ono; D. J. Tweet

Appl. Phys. Lett. 84, 1913–1915 (2004) https://doi.org/10.1063/1.1667619

Abstract

View articletitled, Densification and improved electrical properties of pulse-deposited films via in situ modulated temperature annealing

Open the PDF for in another window

Coupled displacive and order–disorder dynamics in ${LiNbO}_{3}$ by molecular-dynamics simulation

S. R. Phillpot; V. Gopalan

Appl. Phys. Lett. 84, 1916–1918 (2004) https://doi.org/10.1063/1.1669063

Abstract

View articletitled, Coupled displacive and order–disorder dynamics in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">LiNbO</mi><mrow><mn>3</mn></mrow></msub></math> by molecular-dynamics simulation

Open the PDF for in another window

NANOSCALE SCIENCE AND DESIGN

Effect of surface hydrophilicity and water vapor pressure on the interfacial shear strength of adsorbed water layer

Doo-In Kim; Hyo-Sok Ahn; Dong-Hoon Choi

Appl. Phys. Lett. 84, 1919–1921 (2004) https://doi.org/10.1063/1.1675933

Abstract

View articletitled, Effect of surface hydrophilicity and water vapor pressure on the interfacial shear strength of adsorbed water layer

Open the PDF for in another window

Site-controlled and size-homogeneous Ge islands on prepatterned Si (001) substrates

Zhenyang Zhong; G. Bauer

Appl. Phys. Lett. 84, 1922–1924 (2004) https://doi.org/10.1063/1.1664014

Abstract

View articletitled, Site-controlled and size-homogeneous Ge islands on prepatterned Si (001) substrates

Open the PDF for in another window

Rewritable nanopattern on a Ge(001) surface utilizing $p(2×2)$ -to- $c(4×2)$ transition of surface reconstruction induced by a scanning tunneling microscope

Yasumasa Takagi; Masamichi Yamada; Kan Nakatsuji; Fumio Komori

Appl. Phys. Lett. 84, 1925–1927 (2004) https://doi.org/10.1063/1.1668324

Abstract

View articletitled, Rewritable nanopattern on a Ge(001) surface utilizing <math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">p(2×2)</mtext></math>-to-<math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">c(4×2)</mtext></math> transition of surface reconstruction induced by a scanning tunneling microscope

Open the PDF for in another window

Coherent nonlinear optical spectroscopy of single quantum dot excited states

E. T. Batteh; Jun Cheng; Gang Chen; D. G. Steel; D. Gammon; D. S. Katzer; D. Park

Appl. Phys. Lett. 84, 1928–1930 (2004) https://doi.org/10.1063/1.1667280

Abstract

View articletitled, Coherent nonlinear optical spectroscopy of single quantum dot excited states

Open the PDF for in another window

Fabrication of (In,Ga)As quantum-dot chains on GaAs(100)

Z. M. Wang; K. Holmes; Yu. I. Mazur; G. J. Salamo

Appl. Phys. Lett. 84, 1931–1933 (2004) https://doi.org/10.1063/1.1669064

Abstract

View articletitled, Fabrication of (In,Ga)As quantum-dot chains on GaAs(100)

Open the PDF for in another window

Intraband absorption for InAs/GaAs quantum dot infrared photodetectors

J.-Z. Zhang; I. Galbraith

Appl. Phys. Lett. 84, 1934–1936 (2004) https://doi.org/10.1063/1.1687459

Abstract

View articletitled, Intraband absorption for InAs/GaAs quantum dot infrared photodetectors

Open the PDF for in another window

Electron emission through a multilayer planar nanostructured solid-state field-controlled emitter

V. Semet; Vu Thien Binh; J. P. Zhang; J. Yang; M. Asif Khan; R. Tsu

Appl. Phys. Lett. 84, 1937–1939 (2004) https://doi.org/10.1063/1.1682701

Abstract

View articletitled, Electron emission through a multilayer planar nanostructured solid-state field-controlled emitter

Open the PDF for in another window

Are surfaces elastically softer or stiffer?

L. G. Zhou; Hanchen Huang

Appl. Phys. Lett. 84, 1940–1942 (2004) https://doi.org/10.1063/1.1682698

Abstract

View articletitled, Are surfaces elastically softer or stiffer?

Open the PDF for in another window

High uniformity of site-controlled pyramidal quantum dots grown on prepatterned substrates

M. H. Baier; S. Watanabe; E. Pelucchi; E. Kapon

Appl. Phys. Lett. 84, 1943–1945 (2004) https://doi.org/10.1063/1.1682677

Abstract

View articletitled, High uniformity of site-controlled pyramidal quantum dots grown on prepatterned substrates

Open the PDF for in another window

High-performance carbon nanotube transistors on ${SrTiO}_{3} / Si$ substrates

B. M. Kim; T. Brintlinger; E. Cobas; M. S. Fuhrer; Haimei Zheng; Z. Yu; R. Droopad; J. Ramdani; K. Eisenbeiser

Appl. Phys. Lett. 84, 1946–1948 (2004) https://doi.org/10.1063/1.1682691

Abstract

View articletitled, High-performance carbon nanotube transistors on <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SrTiO</mi><mrow><mn>3</mn></mrow></msub><mi xmlns="">/</mi><mi mathvariant="normal" xmlns="">Si</mi></math> substrates

Open the PDF for in another window

DEVICE PHYSICS

Multilevel memory based on molecular devices

Chao Li; Wendy Fan; Bo Lei; Daihua Zhang; Song Han; Tao Tang; Xiaolei Liu; Zuqin Liu; Sylvia Asano; Meyya Meyyappan; Jie Han; Chongwu Zhou

Appl. Phys. Lett. 84, 1949–1951 (2004) https://doi.org/10.1063/1.1667615

Abstract

View articletitled, Multilevel memory based on molecular devices

Open the PDF for in another window

Quantum-well-base heterojunction bipolar light-emitting transistor

M. Feng; N. Holonyak, Jr.; R. Chan

Appl. Phys. Lett. 84, 1952–1954 (2004) https://doi.org/10.1063/1.1669071

Abstract

View articletitled, Quantum-well-base heterojunction bipolar light-emitting transistor

Open the PDF for in another window

Spin-filter devices based on resonant tunneling antisymmetrical magnetic/semiconductor hybrid structures

H. Z. Xu; Yafei Zhang

Appl. Phys. Lett. 84, 1955–1957 (2004) https://doi.org/10.1063/1.1655688

Abstract

View articletitled, Spin-filter devices based on resonant tunneling antisymmetrical magnetic/semiconductor hybrid structures

Open the PDF for in another window

Doubling of sensitivity and bandwidth in phonon cooled hot electron bolometer mixers

J. J. A. Baselmans; M. Hajenius; J. R. Gao; T. M. Klapwijk; P. A. J. de Korte; B. Voronov; G. Gol’tsman

Appl. Phys. Lett. 84, 1958–1960 (2004) https://doi.org/10.1063/1.1667012

Abstract

View articletitled, Doubling of sensitivity and bandwidth in phonon cooled hot electron bolometer mixers

Open the PDF for in another window

Experimental verification on the origin of plateau-like current–voltage characteristics of resonant tunneling diodes

Z. J. Qiu; Y. S. Gui; S. L. Guo; N. Dai; J. H. Chu; X. X. Zhang; Y. P. Zeng

Appl. Phys. Lett. 84, 1961–1963 (2004) https://doi.org/10.1063/1.1682690

Abstract

View articletitled, Experimental verification on the origin of plateau-like current–voltage characteristics of resonant tunneling diodes

Open the PDF for in another window

High-power characteristics of GaN/InGaN double heterojunction bipolar transistors

Toshiki Makimoto; Yoshiharu Yamauchi; Kazuhide Kumakura

Appl. Phys. Lett. 84, 1964–1966 (2004) https://doi.org/10.1063/1.1675934

Abstract

View articletitled, High-power characteristics of GaN/InGaN double heterojunction bipolar transistors

Open the PDF for in another window

Electroluminescence from a single pyramidal quantum dot in a light-emitting diode

M. H. Baier; C. Constantin; E. Pelucchi; E. Kapon

Appl. Phys. Lett. 84, 1967–1969 (2004) https://doi.org/10.1063/1.1687453

Abstract

View articletitled, Electroluminescence from a single pyramidal quantum dot in a light-emitting diode

Open the PDF for in another window

Carrier trapping and current collapse mechanism in GaN metal–semiconductor field-effect transistors

A. F. M. Anwar; Syed S. Islam; Richard T. Webster

Appl. Phys. Lett. 84, 1970–1972 (2004) https://doi.org/10.1063/1.1682700

Abstract

View articletitled, Carrier trapping and current collapse mechanism in GaN metal–semiconductor field-effect transistors

Open the PDF for in another window

APPLIED BIOPHYSICS

Integrated multiple patch-clamp array chip via lateral cell trapping junctions

J. Seo; C. Ionescu-Zanetti; J. Diamond; R. Lal; L. P. Lee

Appl. Phys. Lett. 84, 1973–1975 (2004) https://doi.org/10.1063/1.1650035

Abstract

View articletitled, Integrated multiple patch-clamp array chip via lateral cell trapping junctions

Open the PDF for in another window

Single virus particle mass detection using microresonators with nanoscale thickness

A. Gupta; D. Akin; R. Bashir

Appl. Phys. Lett. 84, 1976–1978 (2004) https://doi.org/10.1063/1.1667011

Abstract

View articletitled, Single virus particle mass detection using microresonators with nanoscale thickness

Open the PDF for in another window

INTERDISCIPLINARY AND GENERAL PHYSICS

Development of a dual-channel scanning microwave/optical microprobe

Roberto S. Aga, Jr.; Jason Brookman; Jonathan Dizon; Judy Z. Wu

Appl. Phys. Lett. 84, 1979–1981 (2004) https://doi.org/10.1063/1.1669066

Abstract

View articletitled, Development of a dual-channel scanning microwave/optical microprobe

Open the PDF for in another window

Long-range Babinet’s effect in complementary left-handed material with gold nanoparticles

S.-C. Wu

Appl. Phys. Lett. 84, 1982–1984 (2004) https://doi.org/10.1063/1.1669080

Abstract

View articletitled, Long-range Babinet’s effect in complementary left-handed material with gold nanoparticles

Open the PDF for in another window

Diffraction pattern and optical activity of complex fluids under external electric field

Q. Zhao; X. P. Zhao; C. Z. Qu; L. Q. Xiang

Appl. Phys. Lett. 84, 1985–1987 (2004) https://doi.org/10.1063/1.1687461

Abstract

View articletitled, Diffraction pattern and optical activity of complex fluids under external electric field

Open the PDF for in another window

Single-charge-carrier-type sensing with an insulated Frisch ring CdZnTe semiconductor radiation detector

W. J. McNeil; D. S. McGregor; A. E. Bolotnikov; G. W. Wright; R. B. James

Appl. Phys. Lett. 84, 1988–1990 (2004) https://doi.org/10.1063/1.1668332

Abstract

View articletitled, Single-charge-carrier-type sensing with an insulated Frisch ring CdZnTe semiconductor radiation detector

Open the PDF for in another window

Recombination of drifting holes with trapped electrons in stabilized a-Se photoconductors: Langevin recombination

S. O. Kasap; Bud Fogal; M. Zahangir Kabir; Robert E. Johanson; Stephen K. O’Leary

Appl. Phys. Lett. 84, 1991–1993 (2004) https://doi.org/10.1063/1.1667001

Abstract

View articletitled, Recombination of drifting holes with trapped electrons in stabilized a-Se photoconductors: Langevin recombination

Open the PDF for in another window

Experimental verification of low-velocity spread axis-encircling electron beam

S. G. Jeon; C. W. Baik; D. H. Kim; G. S. Park; N. Sato; K. Yokoo

Appl. Phys. Lett. 84, 1994–1996 (2004) https://doi.org/10.1063/1.1687454

Abstract

View articletitled, Experimental verification of low-velocity spread axis-encircling electron beam

Open the PDF for in another window

COMMENTS

Comment on “Three-dimensional photonic-crystal emitter for thermal photovoltaic power generation” [Appl. Phys. Lett. 83, 380 (2003)]

Thorsten Trupke; Peter Würfel; Martin A. Green

Appl. Phys. Lett. 84, 1997–1998 (2004) https://doi.org/10.1063/1.1667269

Abstract

View articletitled, Comment on “Three-dimensional photonic-crystal emitter for thermal photovoltaic power generation” [Appl. Phys. Lett. 83, 380 (2003)]

Open the PDF for in another window

Response to “Comment on ‘Three-dimensional photonic-crystal emitter for thermal photovoltaic power generation’ ” [Appl. Phys. Lett. 84, 1997 (2004)]

S. Y. Lin; J. Moreno; J. G. Fleming

Appl. Phys. Lett. 84, 1999 (2004) https://doi.org/10.1063/1.1667270

View articletitled, Response to “Comment on ‘Three-dimensional photonic-crystal emitter for thermal photovoltaic power generation’ ” [Appl. Phys. Lett. 84, 1997 (2004)]

Open the PDF for in another window

ERRATA

Erratum: “Thermal conductivity in strain symmetrized Si/Ge superlattices on Si(111)” [Appl. Phys. Lett. 83, 4184 (2003)]

S. Chakraborty; C. A. Kleint; A. Heinrich; C. M. Schneider; J. Schumann; M. Falke; S. Teichert

Appl. Phys. Lett. 84, 2000 (2004) https://doi.org/10.1063/1.1650559

View articletitled, Erratum: “Thermal conductivity in strain symmetrized Si/Ge superlattices on Si(111)” [Appl. Phys. Lett. 83, 4184 (2003)]

Open the PDF for in another window

Publisher’s Note: “Reversible adsorption-enhanced quantum confinement in semiconductor quantum dots” [Appl. Phys. Lett. 81, 5045 (2002)]

Shaibal K. Sarkar; Nirmala Chandrasekharan; Sasha Gorer; Gary Hodes

Appl. Phys. Lett. 84, 2001 (2004) https://doi.org/10.1063/1.1689663

View articletitled, Publisher’s Note: “Reversible adsorption-enhanced quantum confinement in semiconductor quantum dots” [Appl. Phys. Lett. 81, 5045 (2002)]

Open the PDF for in another window

Publisher’s Note: “Silicon oxide thickness-dependent growth of carbon nanotubes” [Appl. Phys. Lett. 84, 109 (2004)]

Anyuan Cao; P. M. Ajayan; G. Ramanath; R. Baskaran; K. Turner

Appl. Phys. Lett. 84, 2002 (2004) https://doi.org/10.1063/1.1689959

View articletitled, Publisher’s Note: “Silicon oxide thickness-dependent growth of carbon nanotubes” [Appl. Phys. Lett. 84, 109 (2004)]

Open the PDF for in another window

Issues

LASERS, OPTICS, AND OPTOELECTRONICS

STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

ELECTRONIC TRANSPORT AND SEMICONDUCTORS

MAGNETISM AND SUPERCONDUCTIVITY

DIELECTRICS AND FERROELECTRICITY

NANOSCALE SCIENCE AND DESIGN

DEVICE PHYSICS

APPLIED BIOPHYSICS

INTERDISCIPLINARY AND GENERAL PHYSICS

COMMENTS

ERRATA

RSS

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

This Feature Is Available To Subscribers Only