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Issues
5 January 2004
ISSN 0003-6951
EISSN 1077-3118
In this Issue
LASERS, OPTICS, AND OPTOELECTRONICS
Linewidth enhancement factor and optical gain in (GaIn)(NAs)/GaAs lasers
Appl. Phys. Lett. 84, 1–3 (2004)
https://doi.org/10.1063/1.1638628
Low-divergence coherent soft x-ray source at 13 nm by high-order harmonics
Appl. Phys. Lett. 84, 4–6 (2004)
https://doi.org/10.1063/1.1637949
Observation of the discrete transition of optically trapped particle position in the vicinity of an interface
Appl. Phys. Lett. 84, 13–15 (2004)
https://doi.org/10.1063/1.1637947
Self-frequency tripling from two cascaded second-order nonlinearities in
Appl. Phys. Lett. 84, 16–18 (2004)
https://doi.org/10.1063/1.1637941
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
Near-term aging and thermal behavior of polyfluorene in various aggregation states
Appl. Phys. Lett. 84, 22–24 (2004)
https://doi.org/10.1063/1.1637431
Thermal stability and decomposition of the laminate system
Appl. Phys. Lett. 84, 28–30 (2004)
https://doi.org/10.1063/1.1637955
Temperature memory effect of a nickel–titanium shape memory alloy
Appl. Phys. Lett. 84, 31–33 (2004)
https://doi.org/10.1063/1.1637958
Structural stability of at high pressures
Appl. Phys. Lett. 84, 34–36 (2004)
https://doi.org/10.1063/1.1637967
Fast electro-optic switching in nematic liquid crystals
Appl. Phys. Lett. 84, 40–42 (2004)
https://doi.org/10.1063/1.1637961
High-gain photorefractive reflection gratings in layered photoconductive polymers
Appl. Phys. Lett. 84, 43–45 (2004)
https://doi.org/10.1063/1.1638900
Observation of backflow in the switch-on dynamics of a hybrid aligned nematic
Appl. Phys. Lett. 84, 46–48 (2004)
https://doi.org/10.1063/1.1638903
Optical properties of metallic nanoparticles in Ni-ion-implanted single crystals
Appl. Phys. Lett. 84, 52–54 (2004)
https://doi.org/10.1063/1.1636817
Spectral investigation for phosphorescent polymer light-emitting devices with doubly doped phosphorescent dyes
Appl. Phys. Lett. 84, 55–57 (2004)
https://doi.org/10.1063/1.1629795
Localization versus field effects in single InGaN quantum wells
Appl. Phys. Lett. 84, 58–60 (2004)
https://doi.org/10.1063/1.1638880
ELECTRONIC TRANSPORT AND SEMICONDUCTORS
Pulse-induced quantum interference of intersubband transitions in coupled quantum wells
Appl. Phys. Lett. 84, 64–66 (2004)
https://doi.org/10.1063/1.1638881
Pressure dependence of the fundamental band-gap energy of CdSe
Appl. Phys. Lett. 84, 67–69 (2004)
https://doi.org/10.1063/1.1638879
Photoemission study of hole-injection enhancement in organic electroluminescent devices with anode
Appl. Phys. Lett. 84, 73–75 (2004)
https://doi.org/10.1063/1.1637945
Two-photon photoelectron spectroscopy of conjugated polymer thin films on gold
Appl. Phys. Lett. 84, 76–78 (2004)
https://doi.org/10.1063/1.1638897
Lateral homogeneity of Schottky contacts on -type ZnO
H. von Wenckstern; E. M. Kaidashev; M. Lorenz; H. Hochmuth; G. Biehne; J. Lenzner; V. Gottschalch; R. Pickenhain; M. Grundmann
Appl. Phys. Lett. 84, 79–81 (2004)
https://doi.org/10.1063/1.1638898
MAGNETISM AND SUPERCONDUCTIVITY
Enhancement at low temperatures of the critical current density for Au-coated thin films
Appl. Phys. Lett. 84, 82–84 (2004)
https://doi.org/10.1063/1.1637944
DIELECTRICS AND FERROELECTRICITY
Positive temperature coefficient of resistivity in paraelectric thin films
Appl. Phys. Lett. 84, 94–96 (2004)
https://doi.org/10.1063/1.1637946
Thermal stability of plasma-nitrided aluminum oxide films on Si
K. P. Bastos; R. P. Pezzi; L. Miotti; G. V. Soares; C. Driemeier; J. Morais; I. J. R. Baumvol; C. Hinkle; G. Lucovsky
Appl. Phys. Lett. 84, 97–99 (2004)
https://doi.org/10.1063/1.1638629
Domain structure and polarization properties of lanthanum-substituted bismuth titanate single crystals
Appl. Phys. Lett. 84, 100–102 (2004)
https://doi.org/10.1063/1.1638631
Spontaneous recovery of hydrogen-degraded ceramic capacitors
Appl. Phys. Lett. 84, 103–105 (2004)
https://doi.org/10.1063/1.1637942
Stability and band offsets of nitrogenated high-dielectric-constant gate oxides
Appl. Phys. Lett. 84, 106–108 (2004)
https://doi.org/10.1063/1.1638896
NANOSCALE SCIENCE AND DESIGN
Silicon oxide thickness-dependent growth of carbon nanotubes
Appl. Phys. Lett. 84, 109–111 (2004)
https://doi.org/10.1063/1.1636826
Effect of and introduction on the luminescent properties of colloidal nanoparticles
Appl. Phys. Lett. 84, 112–114 (2004)
https://doi.org/10.1063/1.1638901
Valley splitting in strained silicon quantum wells
Timothy B. Boykin; Gerhard Klimeck; M. A. Eriksson; Mark Friesen; S. N. Coppersmith; Paul von Allmen; Fabiano Oyafuso; Seungwon Lee
Appl. Phys. Lett. 84, 115–117 (2004)
https://doi.org/10.1063/1.1637718
Facile, on-demand electronic nanodevice fabrication from photo- and electro-active silver oxide
Appl. Phys. Lett. 84, 118–120 (2004)
https://doi.org/10.1063/1.1638626
Vibrational behaviors of multiwalled-carbon-nanotube-based nanomechanical resonators
Appl. Phys. Lett. 84, 121–123 (2004)
https://doi.org/10.1063/1.1638623
Room-temperature hydrogen storage characteristics of ZnO nanowires
Appl. Phys. Lett. 84, 124–126 (2004)
https://doi.org/10.1063/1.1637939
DEVICE PHYSICS
Mg-doped thin film as improved -type organic semiconductor for a solar cell
Appl. Phys. Lett. 84, 127–129 (2004)
https://doi.org/10.1063/1.1637943
Efficient electrophosphorescent polymer light-emitting devices using a Cs/Al cathode
Appl. Phys. Lett. 84, 130–132 (2004)
https://doi.org/10.1063/1.1637966
Magnetic-field-assisted assembly of metal/polymer/metal junction sensors
Appl. Phys. Lett. 84, 133–135 (2004)
https://doi.org/10.1063/1.1633678
Controlled-junction superconducting quantum interference device via phonon injection
Appl. Phys. Lett. 84, 136–138 (2004)
https://doi.org/10.1063/1.1638627
Monte Carlo simulation of hot-carrier phenomena in open quantum devices: A kinetic approach
Appl. Phys. Lett. 84, 139–141 (2004)
https://doi.org/10.1063/1.1637965
Highly efficient electrophosphorescence devices based on rhenium complexes
Appl. Phys. Lett. 84, 148–150 (2004)
https://doi.org/10.1063/1.1638635
Light-emitting transistor: Light emission from InGaP/GaAs heterojunction bipolar transistors
Appl. Phys. Lett. 84, 151–153 (2004)
https://doi.org/10.1063/1.1637950
APPLIED BIOPHYSICS
ERRATA
Erratum: “Vertical channel all-organic thin-film transistors” [Appl. Phys. Lett. 82, 4579 (2003)]
R. Parashkov; E. Becker; S. Hartmann; G. Ginev; D. Schneider; H. Krautwald; T. Dobbertin; D. Metzdorf; F. Brunetti; C. Schildknecht; A. Kammoun; M. Brandes; T. Riedl; H.-H. Johannes; W. Kowalsky
Appl. Phys. Lett. 84, 157 (2004)
https://doi.org/10.1063/1.1639931
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Era of entropy: Synthesis, structure, properties, and applications of high-entropy materials
Christina M. Rost, Alessandro R. Mazza, et al.
Piezoelectric phononic integrated circuits
Krishna C. Balram