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Issues
4 August 2003
ISSN 0003-6951
EISSN 1077-3118
In this Issue
LASERS, OPTICS, AND OPTOELECTRONICS
High-power Er:Yb fiber laser with very high numerical aperture pump-cladding waveguide
Appl. Phys. Lett. 83, 817–818 (2003)
https://doi.org/10.1063/1.1596378
Experimental investigation of single voxels for laser nanofabrication via two-photon photopolymerization
Appl. Phys. Lett. 83, 819–821 (2003)
https://doi.org/10.1063/1.1598293
Demonstration of finite-aperture tapered unstable resonator lasers
Appl. Phys. Lett. 83, 822–824 (2003)
https://doi.org/10.1063/1.1598292
Thermal bias operation in electro-optic polymer modulators
Appl. Phys. Lett. 83, 827–829 (2003)
https://doi.org/10.1063/1.1596377
Low-threshold lasing of InGaN vertical-cavity surface-emitting lasers with dielectric distributed Bragg reflectors
Appl. Phys. Lett. 83, 830–832 (2003)
https://doi.org/10.1063/1.1596728
Enhanced thermal stability of laser diodes with shape-engineered quantum dot medium
Appl. Phys. Lett. 83, 833–835 (2003)
https://doi.org/10.1063/1.1598645
Surface plasmon resonance on microaperture vertical-cavity surface-emitting laser with metal grating
Appl. Phys. Lett. 83, 836–838 (2003)
https://doi.org/10.1063/1.1597979
Phase-coherent multicolor femtosecond pulse generation
Appl. Phys. Lett. 83, 839–841 (2003)
https://doi.org/10.1063/1.1598651
Synthesis and characterization of composition-spread thin films with high third-order optical nonlinearity
Appl. Phys. Lett. 83, 842–844 (2003)
https://doi.org/10.1063/1.1597411
Frequency-doubled diode laser for ultraviolet absorption spectroscopy at 325 nm
Appl. Phys. Lett. 83, 845–847 (2003)
https://doi.org/10.1063/1.1598285
PLASMAS AND ELECTRICAL DISCHARGES
Radio-frequency-driven near atmospheric pressure microplasma in a hollow slot electrode configuration
Appl. Phys. Lett. 83, 854–856 (2003)
https://doi.org/10.1063/1.1564640
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
Photoluminescence in tensile-strained Si type-II quantum wells on bulk single-crystal SiGe substrates
Appl. Phys. Lett. 83, 857–859 (2003)
https://doi.org/10.1063/1.1597413
Investigation of radiative recombination from Mn-related states in
Appl. Phys. Lett. 83, 866–868 (2003)
https://doi.org/10.1063/1.1597750
Comparison of Cu electromigration lifetime in Cu interconnects coated with various caps
C.-K. Hu; L. Gignac; E. Liniger; B. Herbst; D. L. Rath; S. T. Chen; S. Kaldor; A. Simon; W.-T. Tseng
Appl. Phys. Lett. 83, 869–871 (2003)
https://doi.org/10.1063/1.1596375
Strain analysis of a quantum-wire system produced by cleaved edge overgrowth using grazing incidence x-ray diffraction
Appl. Phys. Lett. 83, 872–874 (2003)
https://doi.org/10.1063/1.1597962
Effect of rapid thermal annealing on strain in ultrathin strained silicon on insulator layers
T. S. Drake; C. Nı́ Chléirigh; M. L. Lee; A. J. Pitera; E. A. Fitzgerald; D. A. Antoniadis; D. H. Anjum; J. Li; R. Hull; N. Klymko; J. L. Hoyt
Appl. Phys. Lett. 83, 875–877 (2003)
https://doi.org/10.1063/1.1598649
Mg acceptor level in AlN probed by deep ultraviolet photoluminescence
Appl. Phys. Lett. 83, 878–880 (2003)
https://doi.org/10.1063/1.1594833
Photochromic effect in magnesium-doped single crystals
Appl. Phys. Lett. 83, 881–883 (2003)
https://doi.org/10.1063/1.1597963
Thermal oxidation of (0001) 4H-SiC at high temperatures in ozone-admixed oxygen gas ambient
Appl. Phys. Lett. 83, 884–886 (2003)
https://doi.org/10.1063/1.1598621
Optical and structural anisotropy of InP/GaInP quantum dots for laser applications
Appl. Phys. Lett. 83, 887–889 (2003)
https://doi.org/10.1063/1.1598290
Lattice parameter and energy band gap of cubic quaternary alloys
Appl. Phys. Lett. 83, 890–892 (2003)
https://doi.org/10.1063/1.1597986
Domain of -type and CuAu–I-type ordered structures in highly strained heterostructures
Appl. Phys. Lett. 83, 896–898 (2003)
https://doi.org/10.1063/1.1599966
Transition from three- to two-dimensional growth in strained films on
Appl. Phys. Lett. 83, 902–904 (2003)
https://doi.org/10.1063/1.1599040
ELECTRONIC TRANSPORT AND SEMICONDUCTORS
Evidence of the Meyer–Neldel rule in InGaAsN alloys and the problem of determining trap capture cross sections
Appl. Phys. Lett. 83, 908–910 (2003)
https://doi.org/10.1063/1.1596713
Electron relaxation and transport dynamics in low-temperature-grown GaAs under 1 eV optical excitation
Appl. Phys. Lett. 83, 911–913 (2003)
https://doi.org/10.1063/1.1595131
Effect of Al doping in GaN films grown by metalorganic chemical vapor deposition
Appl. Phys. Lett. 83, 917–919 (2003)
https://doi.org/10.1063/1.1597423
Magnetism in Mn-doped ZnO bulk samples prepared by solid state reaction
Appl. Phys. Lett. 83, 920–922 (2003)
https://doi.org/10.1063/1.1597414
Hydrogenation of Si from films: Characterization of H introduced into the Si
Appl. Phys. Lett. 83, 931–933 (2003)
https://doi.org/10.1063/1.1598643
Study on interfacial dislocations of Si substrate/epitaxial layer by self-interstitial decoration technique
Appl. Phys. Lett. 83, 934–936 (2003)
https://doi.org/10.1063/1.1596385
Spin-dependent transmission in waveguides with periodically modulated strength of the spin-orbit interaction
Appl. Phys. Lett. 83, 940–942 (2003)
https://doi.org/10.1063/1.1597980
Gettering of Pd to implantation-induced nanocavities in Si
Appl. Phys. Lett. 83, 946–947 (2003)
https://doi.org/10.1063/1.1597424
MAGNETISM AND SUPERCONDUCTIVITY
Low tunnel magnetoresistance dependence versus bias voltage in double barrier magnetic tunnel junction
Appl. Phys. Lett. 83, 948–950 (2003)
https://doi.org/10.1063/1.1597964
Giant magnetocurrent exceeding 3400% in magnetic tunnel transistors with spin-valve base layers
Appl. Phys. Lett. 83, 951–953 (2003)
https://doi.org/10.1063/1.1592001
Field-driven hysteretic and reversible resistive switch at the interface
Appl. Phys. Lett. 83, 957–959 (2003)
https://doi.org/10.1063/1.1590741
Very large giant magnetoresistance of spin valves with specularly reflective oxide layers
Appl. Phys. Lett. 83, 960–962 (2003)
https://doi.org/10.1063/1.1597751
Magnetically induced phase separation and magnetic properties of Co–Mo hexagonal-close-packed structure thin films
Appl. Phys. Lett. 83, 966–968 (2003)
https://doi.org/10.1063/1.1597746
Effects of magnetic field on two-dimensional superconducting quantum interference filters
Appl. Phys. Lett. 83, 969–971 (2003)
https://doi.org/10.1063/1.1597753
Propagating spin wave spectroscopy in a permalloy film: A quantitative analysis
Appl. Phys. Lett. 83, 972–974 (2003)
https://doi.org/10.1063/1.1597745
Epitaxial growth and magnetic properties of EuO on (001) Si by molecular-beam epitaxy
J. Lettieri; V. Vaithyanathan; S. K. Eah; J. Stephens; V. Sih; D. D. Awschalom; J. Levy; D. G. Schlom
Appl. Phys. Lett. 83, 975–977 (2003)
https://doi.org/10.1063/1.1593832
DIELECTRICS AND FERROELECTRICITY
NANOSCALE SCIENCE AND DESIGN
Size-dependent radiative decay time of excitons in GaN/AlN self-assembled quantum dots
Appl. Phys. Lett. 83, 984–986 (2003)
https://doi.org/10.1063/1.1596382
InGaAs/GaAs three-dimensionally-ordered array of quantum dots
Appl. Phys. Lett. 83, 987–989 (2003)
https://doi.org/10.1063/1.1596712
Fabrication and mechanical characterization of ultrashort nanocantilevers
Appl. Phys. Lett. 83, 990–992 (2003)
https://doi.org/10.1063/1.1592303
Nanoscale mechanical behavior of individual semiconducting nanobelts
Appl. Phys. Lett. 83, 993–995 (2003)
https://doi.org/10.1063/1.1597754
Polarization-dependent reflectivity from dielectric nanowires
Appl. Phys. Lett. 83, 996–998 (2003)
https://doi.org/10.1063/1.1598283
Ga-filled single-crystalline MgO nanotube: Wide-temperature range nanothermometer
Appl. Phys. Lett. 83, 999–1001 (2003)
https://doi.org/10.1063/1.1597422
High resolution-high energy x-ray photoelectron spectroscopy using third-generation synchrotron radiation source, and its application to Si-high insulator systems
K. Kobayashi; M. Yabashi; Y. Takata; T. Tokushima; S. Shin; K. Tamasaku; D. Miwa; T. Ishikawa; H. Nohira; T. Hattori; Y. Sugita; O. Nakatsuka; A. Sakai; S. Zaima
Appl. Phys. Lett. 83, 1005–1007 (2003)
https://doi.org/10.1063/1.1595714
Temperature-mediated switching of magnetoresistance in Co-contacted multiwall carbon nanotubes
Appl. Phys. Lett. 83, 1008–1010 (2003)
https://doi.org/10.1063/1.1597965
Size-dependent charge storage in amorphous silicon quantum dots embedded in silicon nitride
Appl. Phys. Lett. 83, 1014–1016 (2003)
https://doi.org/10.1063/1.1596371
Quantum-well microtube constructed from a freestanding thin quantum-well layer
M. Hosoda; Y. Kishimoto; M. Sato; S. Nashima; K. Kubota; S. Saravanan; P. O. Vaccaro; T. Aida; N. Ohtani
Appl. Phys. Lett. 83, 1017–1019 (2003)
https://doi.org/10.1063/1.1599621
DEVICE PHYSICS
A monolayer organic light-emitting diode using an organic dye salt
Appl. Phys. Lett. 83, 1020–1022 (2003)
https://doi.org/10.1063/1.1591068
Improving images from a near-field scanning microwave microscope using a hybrid probe
Appl. Phys. Lett. 83, 1026–1028 (2003)
https://doi.org/10.1063/1.1595134
Fabrication and photoresponse of a -heterojunction diode composed of transparent oxide semiconductors, and
Hiromichi Ohta; Masahiro Hirano; Ken Nakahara; Hideaki Maruta; Tetsuhiro Tanabe; Masao Kamiya; Toshio Kamiya; Hideo Hosono
Appl. Phys. Lett. 83, 1029–1031 (2003)
https://doi.org/10.1063/1.1598624
Near-field scanning microwave microscope using a dielectric resonator
Appl. Phys. Lett. 83, 1032–1034 (2003)
https://doi.org/10.1063/1.1597984
High current gain of GaN/InGaN double heterojunction bipolar transistors using base regrowth of
Appl. Phys. Lett. 83, 1035–1037 (2003)
https://doi.org/10.1063/1.1597989
Improved performance and stability of organic light-emitting devices with silicon oxy-nitride buffer layer
Appl. Phys. Lett. 83, 1038–1040 (2003)
https://doi.org/10.1063/1.1598287
APPLIED BIOPHYSICS
Protein printing with an atomic force sensing nanofountainpen
Appl. Phys. Lett. 83, 1041–1043 (2003)
https://doi.org/10.1063/1.1594844
INTERDISCIPLINARY AND GENERAL PHYSICS
Femtosecond electron diffraction for direct measurement of ultrafast atomic motions
Appl. Phys. Lett. 83, 1044–1046 (2003)
https://doi.org/10.1063/1.1593831
Catalytic role of boron atoms in self-interstitial clustering in Si
Appl. Phys. Lett. 83, 1047–1049 (2003)
https://doi.org/10.1063/1.1596729
Shorted-end probes for accurate permittivity measurements with time-domain reflectometry
Appl. Phys. Lett. 83, 1050–1052 (2003)
https://doi.org/10.1063/1.1596724
Slow electromagnetic pulse propagation through a narrow transmission band in a coaxial photonic crystal
Appl. Phys. Lett. 83, 1053–1055 (2003)
https://doi.org/10.1063/1.1597416
ERRATA
Attosecond physics and technology
O. Alexander, D. Ayuso, et al.
Significant improvement of breakdown voltage of Al0.86Ga0.14N Schottky barrier diodes by atomic layer etching
Tingang Liu, Zhiyuan Liu, et al.
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.