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Issues
28 July 2003
ISSN 0003-6951
EISSN 1077-3118
In this Issue
LASERS, OPTICS, AND OPTOELECTRONICS
Experimental observation of photonic-crystal emission near a photonic band edge
Appl. Phys. Lett. 83, 593–595 (2003)
https://doi.org/10.1063/1.1594263
Comparison of intraband absorption and photocurrent in InAs/GaAs quantum dots
A. M. Adawi; E. A. Zibik; L. R. Wilson; A. Lemaı̂tre; J. W. Cockburn; M. S. Skolnick; M. Hopkinson; G. Hill
Appl. Phys. Lett. 83, 602–604 (2003)
https://doi.org/10.1063/1.1592892
Photofabrication of wood-pile three-dimensional photonic crystals using four-beam laser interference
Appl. Phys. Lett. 83, 608–610 (2003)
https://doi.org/10.1063/1.1595720
Diffraction properties of two-dimensional photonic crystals
G. von Freymann; W. Koch; D. C. Meisel; M. Wegener; M. Diem; A. Garcia-Martin; S. Pereira; K. Busch; J. Schilling; R. B. Wehrspohn; U. Gösele
Appl. Phys. Lett. 83, 614–616 (2003)
https://doi.org/10.1063/1.1596731
1.47–1.49-μm InGaAsP/InP diode laser arrays
A. Gourevitch; G. Belenky; D. Donetsky; B. Laikhtman; D. Westerfeld; C. W. Trussell; H. An; Z. Shellenbarger; R. Martinelli
Appl. Phys. Lett. 83, 617–619 (2003)
https://doi.org/10.1063/1.1596379
Second-harmonic generation through optimized modal phase matching in semiconductor waveguides
Appl. Phys. Lett. 83, 620–622 (2003)
https://doi.org/10.1063/1.1596726
On the influence of hydrogen on the erbium-related luminescence in silicon
Appl. Phys. Lett. 83, 623–625 (2003)
https://doi.org/10.1063/1.1596380
PLASMAS AND ELECTRICAL DISCHARGES
On the extraction of positive and negative ions from electron-beam-generated plasmas
Appl. Phys. Lett. 83, 626–628 (2003)
https://doi.org/10.1063/1.1595155
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
Raman spectroscopy of GaN nucleation and free-standing layers grown by hydride vapor phase epitaxy on oxidized silicon
Appl. Phys. Lett. 83, 629–631 (2003)
https://doi.org/10.1063/1.1592623
Deformation mechanism in nanocrystalline Al: Partial dislocation slip
Appl. Phys. Lett. 83, 632–634 (2003)
https://doi.org/10.1063/1.1594836
Thermodynamic argument about nanoribbon growth
Appl. Phys. Lett. 83, 635–637 (2003)
https://doi.org/10.1063/1.1594837
Sputter deposited GaN doped erbium thin films: Photoluminescence and 1550 nm infrared electroluminescence
Appl. Phys. Lett. 83, 641–643 (2003)
https://doi.org/10.1063/1.1595731
Defect reduction in a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy
B. A. Haskell; F. Wu; M. D. Craven; S. Matsuda; P. T. Fini; T. Fujii; K. Fujito; S. P. DenBaars; J. S. Speck; Shuji Nakamura
Appl. Phys. Lett. 83, 644–646 (2003)
https://doi.org/10.1063/1.1593817
Green electroluminescence of thin films
Appl. Phys. Lett. 83, 647–649 (2003)
https://doi.org/10.1063/1.1595715
Intense visible light emission from stress-activated
Appl. Phys. Lett. 83, 650–652 (2003)
https://doi.org/10.1063/1.1594828
Structural and optical characterization of nonpolar GaN/AlN quantum wells
Appl. Phys. Lett. 83, 653–655 (2003)
https://doi.org/10.1063/1.1595154
Effect of BN coatings on oxidation resistance and field emission of SiC nanowires
Appl. Phys. Lett. 83, 659–661 (2003)
https://doi.org/10.1063/1.1595721
Formation of and defects in -irradiated or ion-implanted silicon containing boron
Appl. Phys. Lett. 83, 665–667 (2003)
https://doi.org/10.1063/1.1595728
High-quality AlInN for high index contrast Bragg mirrors lattice matched to GaN
Appl. Phys. Lett. 83, 668–670 (2003)
https://doi.org/10.1063/1.1596733
Gibb’s free energy for the crystallization of glass forming liquids
Appl. Phys. Lett. 83, 671–673 (2003)
https://doi.org/10.1063/1.1595725
Si doping effect on strain reduction in compressively strained thin films
Appl. Phys. Lett. 83, 674–676 (2003)
https://doi.org/10.1063/1.1595133
Stress and its effect on optical properties of GaN epilayers grown on Si(111), 6H-SiC(0001), and c-plane sapphire
Appl. Phys. Lett. 83, 677–679 (2003)
https://doi.org/10.1063/1.1592306
Dissolution kinetics of boron-interstitial clusters in silicon
Appl. Phys. Lett. 83, 680–682 (2003)
https://doi.org/10.1063/1.1594264
Sensitivity of amorphous silicon-germanium solar cells to oxygen impurity atoms
Appl. Phys. Lett. 83, 683–685 (2003)
https://doi.org/10.1063/1.1596376
Spatially resolved electron energy-loss spectroscopy of an interfacial structure at a Ti thin film Cu interconnect
Appl. Phys. Lett. 83, 686–688 (2003)
https://doi.org/10.1063/1.1596725
ELECTRONIC TRANSPORT AND SEMICONDUCTORS
Fabrication of semiconductor Kagome lattice structure by selective area metalorganic vapor phase epitaxy
Appl. Phys. Lett. 83, 689–691 (2003)
https://doi.org/10.1063/1.1593823
Trap-dominated minority-carrier recombination in junctions
Appl. Phys. Lett. 83, 698–700 (2003)
https://doi.org/10.1063/1.1596711
Negative differential resistance effects of trench-type InGaAs quantum-wire field-effect transistors with 50-nm gate-length
Kee-Youn Jang; Takeyoshi Sugaya; Cheol-Koo Hahn; Mutsuo Ogura; Kazuhiro Komori; Akito Shinoda; Kenji Yonei
Appl. Phys. Lett. 83, 701–703 (2003)
https://doi.org/10.1063/1.1595150
Electric-field-induced reversible avalanche breakdown in a GaAs microcrystal due to cross band gap impact ionization
Appl. Phys. Lett. 83, 704–706 (2003)
https://doi.org/10.1063/1.1595712
Ohmic hole injection in poly(9,9-dioctylfluorene) polymer light-emitting diodes
Appl. Phys. Lett. 83, 707–709 (2003)
https://doi.org/10.1063/1.1596722
MAGNETISM AND SUPERCONDUCTIVITY
Structural and magnetic properties of ultrathin epitaxial manganite films: Strain versus finite size effects
Appl. Phys. Lett. 83, 713–715 (2003)
https://doi.org/10.1063/1.1594838
Systematic analyses of anomalous torque curves in granular thin films
Appl. Phys. Lett. 83, 719–721 (2003)
https://doi.org/10.1063/1.1596386
Spin-polarized injection into grain boundary junctions
Appl. Phys. Lett. 83, 725–727 (2003)
https://doi.org/10.1063/1.1596383
DIELECTRICS AND FERROELECTRICITY
Electric-field-induced dielectric anomalies in C-oriented single crystals
Appl. Phys. Lett. 83, 731–733 (2003)
https://doi.org/10.1063/1.1595730
High-resolution domain imaging on the nonpolar y-face of periodically poled by means of atomic force microscopy
Appl. Phys. Lett. 83, 734–736 (2003)
https://doi.org/10.1063/1.1593834
Ionic transport in polycrystalline zirconia and Frenkel’s space-charge layer postulation
Appl. Phys. Lett. 83, 737–739 (2003)
https://doi.org/10.1063/1.1595729
Enhanced initial growth of atomic-layer-deposited metal oxides on hydrogen-terminated silicon
Martin M. Frank; Yves J. Chabal; Martin L. Green; Annelies Delabie; Bert Brijs; Glen D. Wilk; Mun-Yee Ho; Elisa B. O. da Rosa; Israel J. R. Baumvol; Fernanda C. Stedile
Appl. Phys. Lett. 83, 740–742 (2003)
https://doi.org/10.1063/1.1595719
Photoluminescence of pyrochlore phase in thin films
Appl. Phys. Lett. 83, 743–745 (2003)
https://doi.org/10.1063/1.1597418
NANOSCALE SCIENCE AND DESIGN
Temperature dependence of field emission from cupric oxide nanobelt films
Appl. Phys. Lett. 83, 746–748 (2003)
https://doi.org/10.1063/1.1595156
Si nanocrystals obtained through polymer pyrolysis
Appl. Phys. Lett. 83, 749–751 (2003)
https://doi.org/10.1063/1.1587876
Transport characteristics of InAs/GaAs quantum-dot infrared photodetectors
Appl. Phys. Lett. 83, 752–754 (2003)
https://doi.org/10.1063/1.1594285
InGaN quantum dots grown by metalorganic vapor phase epitaxy employing a post-growth nitrogen anneal
Rachel A. Oliver; G. Andrew D. Briggs; Menno J. Kappers; Colin J. Humphreys; Shazia Yasin; James H. Rice; Jonathon D Smith; Robert A. Taylor
Appl. Phys. Lett. 83, 755–757 (2003)
https://doi.org/10.1063/1.1595716
Nanoscale surface modification of glass using a 1064 nm pulsed laser
Appl. Phys. Lett. 83, 758–760 (2003)
https://doi.org/10.1063/1.1597425
Room-temperature ultraviolet-emitting nanowires
Appl. Phys. Lett. 83, 761–763 (2003)
https://doi.org/10.1063/1.1596372
Impact of ultraviolet-laser heating on the photoluminescence of ensembles of GaN microcrystallites
Appl. Phys. Lett. 83, 764–766 (2003)
https://doi.org/10.1063/1.1597752
Spherical micromirrors from templated self-assembly: Polarization rotation on the micron scale
Appl. Phys. Lett. 83, 767–769 (2003)
https://doi.org/10.1063/1.1595723
DEVICE PHYSICS
Efficiency enhancement of ideal photovoltaic solar cells by photonic excitations in multi-intermediate band structures
Appl. Phys. Lett. 83, 770–772 (2003)
https://doi.org/10.1063/1.1592881
Influence of surface oxides on hydrogen-sensitive Pd:GaN Schottky diodes
Appl. Phys. Lett. 83, 773–775 (2003)
https://doi.org/10.1063/1.1593794
Characteristics of ultrathin gate dielectrics on strained- layers
Appl. Phys. Lett. 83, 779–781 (2003)
https://doi.org/10.1063/1.1589165
Effect of hydrogen dilution on the open-circuit voltage of hydrogenated amorphous silicon solar cells
Appl. Phys. Lett. 83, 782–784 (2003)
https://doi.org/10.1063/1.1595153
Monte Carlo simulations of avalanche photodiodes and resonance phenomenon in the multiplication noise
Appl. Phys. Lett. 83, 785–787 (2003)
https://doi.org/10.1063/1.1596727
Scaling limits of hafnium–silicate films for gate-dielectric applications
Appl. Phys. Lett. 83, 788–790 (2003)
https://doi.org/10.1063/1.1594829
Demonstration of a low-noise near-infrared photon counter with multiphoton discrimination
Appl. Phys. Lett. 83, 791–793 (2003)
https://doi.org/10.1063/1.1596723
Room-temperature electroluminescence of ion-beam-synthesized precipitates in silicon
Appl. Phys. Lett. 83, 794–796 (2003)
https://doi.org/10.1063/1.1593815
Fabrication and coupling to planar high- silica disk microcavities
Appl. Phys. Lett. 83, 797–799 (2003)
https://doi.org/10.1063/1.1593833
INTERDISCIPLINARY AND GENERAL PHYSICS
Component spatial pattern analysis of chemicals using terahertz spectroscopic imaging
Appl. Phys. Lett. 83, 800–802 (2003)
https://doi.org/10.1063/1.1595132
Low angular-dispersion microwave absorption of a dual-pitch nondiffracting metal bigrating
Appl. Phys. Lett. 83, 806–808 (2003)
https://doi.org/10.1063/1.1593229
COMMENTS
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Superconducting flip-chip devices using indium microspheres on Au-passivated Nb or NbN as under-bump metallization layer
Achintya Paradkar, Paul Nicaise, et al.
Special issue APL organic and hybrid photodetectors
Karl Leo, Canek Fuentes-Hernandez, et al.