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Issues
8 December 2003
ISSN 0003-6951
EISSN 1077-3118
In this Issue
LASERS, OPTICS, AND OPTOELECTRONICS
Electrically tunable ring resonators incorporating nematic liquid crystals as cladding layers
Appl. Phys. Lett. 83, 4689–4691 (2003)
https://doi.org/10.1063/1.1630370
Hybrid electro-optic polymer/sol–gel waveguide modulator fabricated by all-wet etching process
Appl. Phys. Lett. 83, 4692–4694 (2003)
https://doi.org/10.1063/1.1630850
Ultrahigh efficiency green polymer light-emitting diodes by nanoscale interface modification
Appl. Phys. Lett. 83, 4695–4697 (2003)
https://doi.org/10.1063/1.1630848
High-temperature performance of GaAs-based bound-to-continuum quantum-cascade lasers
Appl. Phys. Lett. 83, 4698–4700 (2003)
https://doi.org/10.1063/1.1633021
4.5 mW operation of AlGaN-based 267 nm deep-ultraviolet light-emitting diodes
Appl. Phys. Lett. 83, 4701–4703 (2003)
https://doi.org/10.1063/1.1633019
Ferroelectric inverse opals with electrically tunable photonic band gap
Appl. Phys. Lett. 83, 4704–4706 (2003)
https://doi.org/10.1063/1.1631737
Fabrication of periodic nanostructures by phase-controlled multiple-beam interference
Appl. Phys. Lett. 83, 4707–4709 (2003)
https://doi.org/10.1063/1.1631746
1.3 μm lasers with AlInAs-capped self-assembled quantum dots
Appl. Phys. Lett. 83, 4710–4712 (2003)
https://doi.org/10.1063/1.1632533
Optical properties of ZnO/GaN heterostructure and its near-ultraviolet light-emitting diode
Qing-Xuan Yu; Bo Xu; Qi-Hong Wu; Yuan Liao; Guan-Zhong Wang; Rong-Chuan Fang; Hsin-Ying Lee; Ching-Ting Lee
Appl. Phys. Lett. 83, 4713–4715 (2003)
https://doi.org/10.1063/1.1632029
White-electrophosphorescence devices based on rhenium complexes
Appl. Phys. Lett. 83, 4716–4718 (2003)
https://doi.org/10.1063/1.1632545
PLASMAS AND ELECTRICAL DISCHARGES
Enhancement of collimated low-energy broad-beam ion source with four-grid accelerator system
Appl. Phys. Lett. 83, 4722–4724 (2003)
https://doi.org/10.1063/1.1631745
Plasma frequency measurements for absolute plasma density by means of wave cutoff method
Appl. Phys. Lett. 83, 4725–4727 (2003)
https://doi.org/10.1063/1.1632026
Argon excimer emission from high-pressure microdischarges in metal capillaries
Appl. Phys. Lett. 83, 4728–4730 (2003)
https://doi.org/10.1063/1.1632034
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
Surface-layer band gap widening in thin films
Appl. Phys. Lett. 83, 4731–4733 (2003)
https://doi.org/10.1063/1.1631396
Structural changes on supercooling liquid silicon
Noël Jakse; Louis Hennet; David L. Price; Shankar Krishnan; Thomas Key; Emilio Artacho; Benoit Glorieux; Alain Pasturel; Marie-Louise Saboungi
Appl. Phys. Lett. 83, 4734–4736 (2003)
https://doi.org/10.1063/1.1631388
Electrical properties of a highly oriented, textured thin film of the ionic conductor on (001) MgO
Appl. Phys. Lett. 83, 4737–4739 (2003)
https://doi.org/10.1063/1.1629378
High-pressure phase transformation of silicon nitride
John Patten; Ronnie Fesperman; Satya Kumar; Sam McSpadden; Jun Qu; Michael Lance; Robert Nemanich; Jennifer Huening
Appl. Phys. Lett. 83, 4740–4742 (2003)
https://doi.org/10.1063/1.1632031
Electroluminescence from Tm-doped GaN deposited by radio-frequency planar magnetron sputtering
Appl. Phys. Lett. 83, 4746–4748 (2003)
https://doi.org/10.1063/1.1627471
Atomic-to-mesoscopic scale structural transition in metal–carbon diamondlike composites probed by second-harmonic generation
Appl. Phys. Lett. 83, 4749–4751 (2003)
https://doi.org/10.1063/1.1631386
Anisotropy in thermo-optic coefficients of polyimide films formed on Si substrates
Appl. Phys. Lett. 83, 4755–4757 (2003)
https://doi.org/10.1063/1.1631744
Thermal stability of epitaxial Pt films on in a metal-oxide–Si structure
M.-H. Cho; D. W. Moon; K. H. Min; R. Sinclair; S. A. Park; Y. K. Kim; K. Jeong; S. K. Kang; D.-H. Ko
Appl. Phys. Lett. 83, 4758–4760 (2003)
https://doi.org/10.1063/1.1632541
Raman study of the phonon in relaxed and pseudomorphic InGaN epilayers
Appl. Phys. Lett. 83, 4761–4763 (2003)
https://doi.org/10.1063/1.1627941
ELECTRONIC TRANSPORT AND SEMICONDUCTORS
Composition dependence of electron and hole transport in polyfluorene:[6,6]-phenyl -butyric acid methyl ester blend films
Appl. Phys. Lett. 83, 4764–4766 (2003)
https://doi.org/10.1063/1.1628826
Low-temperature hydrophobic silicon wafer bonding
Appl. Phys. Lett. 83, 4767–4769 (2003)
https://doi.org/10.1063/1.1632032
Cathodoluminescence of thin films used in high-efficiency solar cells
Manuel J. Romero; Kannan Ramanathan; Miguel A. Contreras; Mowafak M. Al-Jassim; Rommel Noufi; Peter Sheldon
Appl. Phys. Lett. 83, 4770–4772 (2003)
https://doi.org/10.1063/1.1631083
Charge transfer between thermally deposited α-naphthyl-phenyl-diamine and chemical-vapor-deposited homoepitaxial diamond films
Appl. Phys. Lett. 83, 4776–4778 (2003)
https://doi.org/10.1063/1.1630155
Origin of etch delay time in dry etching of AlGaN/GaN structures
D. Buttari; A. Chini; T. Palacios; R. Coffie; L. Shen; H. Xing; S. Heikman; L. McCarthy; A. Chakraborty; S. Keller; U. K. Mishra
Appl. Phys. Lett. 83, 4779–4781 (2003)
https://doi.org/10.1063/1.1632035
Formation mechanism of crater defects on HgCdTe/CdZnTe (211) B epilayers grown by molecular beam epitaxy
Appl. Phys. Lett. 83, 4785–4787 (2003)
https://doi.org/10.1063/1.1633017
Single-crystalline InN films with an absorption edge between 0.7 and 2 eV grown using different techniques and evidence of the actual band gap energy
Ashraful Ghani Bhuiyan; Kenichi Sugita; Ken Kasashima; Akihiro Hashimoto; Akio Yamamoto; Valery Yu. Davydov
Appl. Phys. Lett. 83, 4788–4790 (2003)
https://doi.org/10.1063/1.1632038
Piezoelectric effects on photoluminescence properties in 10-nm-thick InGaN quantum wells
Appl. Phys. Lett. 83, 4791–4793 (2003)
https://doi.org/10.1063/1.1632539
Dephasing mechanisms of Bloch oscillations in superlattices investigated by time-resolved terahertz spectroscopy
Appl. Phys. Lett. 83, 4794–4796 (2003)
https://doi.org/10.1063/1.1633013
Plan-view image contrast of dislocations in GaN
Appl. Phys. Lett. 83, 4797–4799 (2003)
https://doi.org/10.1063/1.1632540
MAGNETISM AND SUPERCONDUCTIVITY
Coherent acoustic phonons in hexagonal manganite
Appl. Phys. Lett. 83, 4800–4802 (2003)
https://doi.org/10.1063/1.1630847
Chemical states of Co and Fe in a specularly reflective oxide layer in spin valves
Appl. Phys. Lett. 83, 4803–4805 (2003)
https://doi.org/10.1063/1.1632024
Artificial flux pinning centers in large, single-grain (RE)-Ba-Cu-O superconductors
Appl. Phys. Lett. 83, 4806–4808 (2003)
https://doi.org/10.1063/1.1631738
Extremely high current-limitation capability of underdoped superconductor
Appl. Phys. Lett. 83, 4809–4811 (2003)
https://doi.org/10.1063/1.1632543
DIELECTRICS AND FERROELECTRICITY
Enhanced magnetoelectric effects in laminate composites of Terfenol- under resonant drive
Appl. Phys. Lett. 83, 4812–4814 (2003)
https://doi.org/10.1063/1.1631756
Epitaxial growth of films on /yttria-stabilized zirconia/Si(001) with atomic layer by pulsed-laser deposition
Appl. Phys. Lett. 83, 4815–4817 (2003)
https://doi.org/10.1063/1.1631741
NANOSCALE SCIENCE AND DESIGN
Observations of near-zero linewidth enhancement factor in a quantum-well coupled quantum-dot laser
Appl. Phys. Lett. 83, 4818–4820 (2003)
https://doi.org/10.1063/1.1631397
Field-emission studies on thin films of zinc oxide nanowires
Appl. Phys. Lett. 83, 4821–4823 (2003)
https://doi.org/10.1063/1.1631735
High performance field-effect transistors made of a multiwall nanotube intramolecular junction
Appl. Phys. Lett. 83, 4824–4826 (2003)
https://doi.org/10.1063/1.1633015
Spontaneous InAs quantum dot nucleation at strained InP/GaInAs interfaces
Appl. Phys. Lett. 83, 4830–4832 (2003)
https://doi.org/10.1063/1.1632542
Ge dots self-assembling: Surfactant mediated growth of Ge on SiGe (118) stress-induced kinetic instabilities
Appl. Phys. Lett. 83, 4833–4835 (2003)
https://doi.org/10.1063/1.1633012
Nanofluidic channels with elliptical cross sections formed using a nonlithographic process
Appl. Phys. Lett. 83, 4836–4838 (2003)
https://doi.org/10.1063/1.1633008
Microcantilevers integrated with heaters and piezoelectric detectors for nano data-storage application
Appl. Phys. Lett. 83, 4839–4841 (2003)
https://doi.org/10.1063/1.1633009
Fragmentation of nanoparticles driven by a phase transition in a flame and their magnetic properties
Appl. Phys. Lett. 83, 4842–4844 (2003)
https://doi.org/10.1063/1.1632534
DEVICE PHYSICS
Effect of external strain on the conductivity of AlGaN/GaN high-electron-mobility transistors
B. S. Kang; S. Kim; J. Kim; F. Ren; K. Baik; S. J. Pearton; B. P. Gila; C. R. Abernathy; C.-C. Pan; G.-T. Chen; J.-I. Chyi; V. Chandrasekaran; M. Sheplak; T. Nishida; S. N. G. Chu
Appl. Phys. Lett. 83, 4845–4847 (2003)
https://doi.org/10.1063/1.1631054
Remote Coulomb scattering in metal–oxide–semiconductor field effect transistors: Screening by electrons in the gate
Appl. Phys. Lett. 83, 4848–4850 (2003)
https://doi.org/10.1063/1.1630169
Gigahertz-band electroacoustic devices based on AlN thick films sputtered on at low temperature
Appl. Phys. Lett. 83, 4851–4853 (2003)
https://doi.org/10.1063/1.1631739
High-quality heterojunction between p-type diamond single-crystal film and n-type cubic boron nitride bulk single crystal
Cheng-Xin Wang; Guo-Wei Yang; Tie-Chen Zhang; Hong-Wu Liu; Yong-Hao Han; Ji-Feng Luo; Chun-Xiao Gao; Guang-Tian Zou
Appl. Phys. Lett. 83, 4854–4856 (2003)
https://doi.org/10.1063/1.1631059
Electrical-field control of metal–insulator transition at room temperature in field-effect transistor
Appl. Phys. Lett. 83, 4860–4862 (2003)
https://doi.org/10.1063/1.1632028
Reduction of grown-in defects by vacancy-assisted oxygen precipitation in high density dynamic random access memory
Appl. Phys. Lett. 83, 4863–4865 (2003)
https://doi.org/10.1063/1.1632536
INTERDISCIPLINARY AND GENERAL PHYSICS
Femtosecond timing measurement and control using ultrafast organic thin films
Makoto Naruse; Hiroyuki Mitsu; Makoto Furuki; Izumi Iwasa; Yasuhiro Sato; Satoshi Tatsuura; Minquan Tian
Appl. Phys. Lett. 83, 4869–4871 (2003)
https://doi.org/10.1063/1.1631743
Time-of-flight secondary ion mass spectroscopy for surface analysis of insulators using a cluster ion beam
Appl. Phys. Lett. 83, 4872–4874 (2003)
https://doi.org/10.1063/1.1630846
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Attosecond physics and technology
O. Alexander, D. Ayuso, et al.
High breakdown voltage normally off Ga2O3 transistors on silicon substrates using GaN buffer
Mritunjay Kumar, Vishal Khandelwal, et al.