Skip Nav Destination

Issues

Select Decade

Select Year

Issue

LASERS, OPTICS, AND OPTOELECTRONICS

Second-harmonic green generation from two-dimensional $χ^{(2)}$ nonlinear photonic crystal with orthorhombic lattice structure

L.-H. Peng; C.-C. Hsu; Y.-C. Shih

Appl. Phys. Lett. 83, 3447–3449 (2003) https://doi.org/10.1063/1.1622786

Abstract

View articletitled, Second-harmonic green generation from two-dimensional <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi>χ</mi><mrow><mtext>(2)</mtext></mrow></msup></math> nonlinear photonic crystal with orthorhombic lattice structure

Open the PDF for in another window

Extruded channel waveguides in a neodymium-doped lead–silicate glass for integrated optic applications

Arshad K. Mairaj; Xian Feng; Daniel W. Hewak

Appl. Phys. Lett. 83, 3450–3452 (2003) https://doi.org/10.1063/1.1622796

Abstract

View articletitled, Extruded channel waveguides in a neodymium-doped lead–silicate glass for integrated optic applications

Open the PDF for in another window

Population inversion by resonant magnetic confinement in terahertz quantum-cascade lasers

Giacomo Scalari; Stéphane Blaser; Lassaad Ajili; Jérôme Faist; Harvey Beere; Edmund Linfield; David Ritchie; Giles Davies

Appl. Phys. Lett. 83, 3453–3455 (2003) https://doi.org/10.1063/1.1622431

Abstract

View articletitled, Population inversion by resonant magnetic confinement in terahertz quantum-cascade lasers

Open the PDF for in another window

AlGaN multiple-quantum-well-based, deep ultraviolet light-emitting diodes with significantly reduced long-wave emission

JianPing Zhang; Shuai Wu; Shiva Rai; Vasavi Mandavilli; Vinod Adivarahan; Ashay Chitnis; Maxim Shatalov; Muhammad Asif Khan

Appl. Phys. Lett. 83, 3456–3458 (2003) https://doi.org/10.1063/1.1623321

Abstract

View articletitled, AlGaN multiple-quantum-well-based, deep ultraviolet light-emitting diodes with significantly reduced long-wave emission

Open the PDF for in another window

PLASMAS AND ELECTRICAL DISCHARGES

Transmission of high-power ${CO}_{2}$ laser pulses through a plasma channel

I. V. Pogorelsky; I. V. Pavlishin; I. Ben-Zvi; T. Kumita; Y. Kamiya; T. Hirose; B. Greenberg; D. Kaganovich; A. Zigler; N. Andreev; N. Bobrova; P. Sasorov

Appl. Phys. Lett. 83, 3459–3461 (2003) https://doi.org/10.1063/1.1622983

Abstract

View articletitled, Transmission of high-power <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CO</mi><mrow><mn>2</mn></mrow></msub></math> laser pulses through a plasma channel

Open the PDF for in another window

STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Discrimination of local radiative and nonradiative recombination processes in an InGaN/GaN single-quantum-well structure by a time-resolved multimode scanning near-field optical microscopy

Akio Kaneta; Takashi Mutoh; Yoichi Kawakami; Shigeo Fujita; Giichi Marutsuki; Yukio Narukawa; Takashi Mukai

Appl. Phys. Lett. 83, 3462–3464 (2003) https://doi.org/10.1063/1.1620677

Abstract

View articletitled, Discrimination of local radiative and nonradiative recombination processes in an InGaN/GaN single-quantum-well structure by a time-resolved multimode scanning near-field optical microscopy

Open the PDF for in another window

Formation of stacking faults containing microtwins in (111) chemical-vapor-deposited diamond homoepitaxial layers

M. Kasu; T. Makimoto; W. Ebert; E. Kohn

Appl. Phys. Lett. 83, 3465–3467 (2003) https://doi.org/10.1063/1.1622105

Abstract

View articletitled, Formation of stacking faults containing microtwins in (111) chemical-vapor-deposited diamond homoepitaxial layers

Open the PDF for in another window

Growth of cubic InN on $r$ -plane sapphire

V. Cimalla; J. Pezoldt; G. Ecke; R. Kosiba; O. Ambacher; L. Spieß; G. Teichert; H. Lu; W. J. Schaff

Appl. Phys. Lett. 83, 3468–3470 (2003) https://doi.org/10.1063/1.1622985

Abstract

View articletitled, Growth of cubic InN on <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">r</mi></math>-plane sapphire

Open the PDF for in another window

Tuning phase stability in nanocomposite multilayers

G. B. Thompson; R. Banerjee; H. L. Fraser

Appl. Phys. Lett. 83, 3471–3473 (2003) https://doi.org/10.1063/1.1620671

Abstract

View articletitled, Tuning phase stability in nanocomposite multilayers

Open the PDF for in another window

High-efficiency visible photoluminescence from amorphous silicon nanoparticles embedded in silicon nitride

Y. Q. Wang; Y. G. Wang; L. Cao; Z. X. Cao

Appl. Phys. Lett. 83, 3474–3476 (2003) https://doi.org/10.1063/1.1621462

Abstract

View articletitled, High-efficiency visible photoluminescence from amorphous silicon nanoparticles embedded in silicon nitride

Open the PDF for in another window

Shallow optically active structural defect in wurtzite GaN epilayers grown on stepped 4H-SiC substrates

S. J. Xu; H. J. Wang; S. H. Cheung; Q. Li; X. Q. Dai; M. H. Xie; S. Y. Tong

Appl. Phys. Lett. 83, 3477–3479 (2003) https://doi.org/10.1063/1.1623006

Abstract

View articletitled, Shallow optically active structural defect in wurtzite GaN epilayers grown on stepped 4H-SiC substrates

Open the PDF for in another window

Widening of optical bandgap of polycrystalline InN with a few percent incorporation of oxygen

Masahiro Yoshimoto; Hiroaki Yamamoto; Wei Huang; Hiroshi Harima; Junji Saraie; Akiyoshi Chayahara; Yuji Horino

Appl. Phys. Lett. 83, 3480–3482 (2003) https://doi.org/10.1063/1.1622445

Abstract

View articletitled, Widening of optical bandgap of polycrystalline InN with a few percent incorporation of oxygen

Open the PDF for in another window

Electric-field-induced quenching effect of Raman scattering in Mg-doped $p$ -GaN

T. S. Jeong; C. J. Youn; M. S. Han; J. W. Yang; K. Y. Lim

Appl. Phys. Lett. 83, 3483–3485 (2003) https://doi.org/10.1063/1.1623337

Abstract

View articletitled, Electric-field-induced quenching effect of Raman scattering in Mg-doped <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">p</mi></math>-GaN

Open the PDF for in another window

Room-temperature ultraviolet emission from GaN/AlN multiple-quantum-well heterostructures

Madalina Furis; A. N. Cartwright; Hong Wu; William J. Schaff

Appl. Phys. Lett. 83, 3486–3488 (2003) https://doi.org/10.1063/1.1623335

Abstract

View articletitled, Room-temperature ultraviolet emission from GaN/AlN multiple-quantum-well heterostructures

Open the PDF for in another window

SnGe superstructure materials for Si-based infrared optoelectronics

M. R. Bauer; C. S. Cook; P. Aella; J. Tolle; J. Kouvetakis; P. A. Crozier; A. V. G. Chizmeshya; David J. Smith; S. Zollner

Appl. Phys. Lett. 83, 3489–3491 (2003) https://doi.org/10.1063/1.1622435

Abstract

View articletitled, SnGe superstructure materials for Si-based infrared optoelectronics

Open the PDF for in another window

Ordered structure and twin boundary of triblock copolymer/silica mesophase thin films

Chi Won Ahn; Theo Rasing; Mahn Won Kim

Appl. Phys. Lett. 83, 3492–3494 (2003) https://doi.org/10.1063/1.1622433

Abstract

View articletitled, Ordered structure and twin boundary of triblock copolymer/silica mesophase thin films

Open the PDF for in another window

In situ spectroscopic measurement of transmitted light related to defect formation in ${SiO}_{2}$ during femtosecond laser irradiation

N. Fukata; Y. Yamamoto; K. Murakami; M. Hase; M. Kitajima

Appl. Phys. Lett. 83, 3495–3497 (2003) https://doi.org/10.1063/1.1623939

Abstract

View articletitled, In situ spectroscopic measurement of transmitted light related to defect formation in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mn>2</mn></mrow></msub></math> during femtosecond laser irradiation

Open the PDF for in another window

Femtosecond laser quenching of the ε phase of iron

Tomokazu Sano; Hiroaki Mori; Etsuji Ohmura; Isamu Miyamoto

Appl. Phys. Lett. 83, 3498–3500 (2003) https://doi.org/10.1063/1.1623935

Abstract

View articletitled, Femtosecond laser quenching of the ε phase of iron

Open the PDF for in another window

Shouldering in B diffusion profiles in Si: Role of di-boron diffusion

Gyeong S. Hwang; William A. Goddard, III

Appl. Phys. Lett. 83, 3501–3503 (2003) https://doi.org/10.1063/1.1619219

Abstract

View articletitled, Shouldering in B diffusion profiles in Si: Role of di-boron diffusion

Open the PDF for in another window

ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Single-crystal organic field effect transistors with the hole mobility $∼8$ ${cm}^{2} / V s$

V. Podzorov; S. E. Sysoev; E. Loginova; V. M. Pudalov; M. E. Gershenson

Appl. Phys. Lett. 83, 3504–3506 (2003) https://doi.org/10.1063/1.1622799

Abstract

View articletitled, Single-crystal organic field effect transistors with the hole mobility <math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">∼8</mtext></math> <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">cm</mi><mrow><mn>2</mn></mrow></msup><mi xmlns="">/</mi><mi mathvariant="normal" xmlns="">V s</mi></math>

Open the PDF for in another window

Photoluminescence of GaN deposited on single-crystal bulk AlN with different polarities

G. Tamulaitis; I. Yilmaz; M. S. Shur; R. Gaska; C. Chen; J. Yang; E. Kuokstis; A. Khan; S. B. Schujman; L. J. Schowalter

Appl. Phys. Lett. 83, 3507–3509 (2003) https://doi.org/10.1063/1.1623322

Abstract

View articletitled, Photoluminescence of GaN deposited on single-crystal bulk AlN with different polarities

Open the PDF for in another window

Light-induced narrowing of excitonic absorption lines in GaN

P. Trautman; K. Pakuła; R. Bożek; J. M. Baranowski

Appl. Phys. Lett. 83, 3510–3512 (2003) https://doi.org/10.1063/1.1622788

Abstract

View articletitled, Light-induced narrowing of excitonic absorption lines in GaN

Open the PDF for in another window

Formation of low resistance and transparent ohmic contacts to p-type GaN using Ni–Mg solid solution

June-O Song; Dong-Seok Leem; Tae-Yeon Seong

Appl. Phys. Lett. 83, 3513–3515 (2003) https://doi.org/10.1063/1.1622984

Abstract

View articletitled, Formation of low resistance and transparent ohmic contacts to p-type GaN using Ni–Mg solid solution

Open the PDF for in another window

Characterization of 7-nm-thick strained Ge-on-insulator layer fabricated by Ge-condensation technique

Shu Nakaharai; Tsutomu Tezuka; Naoharu Sugiyama; Yoshihiko Moriyama; Shin-ichi Takagi

Appl. Phys. Lett. 83, 3516–3518 (2003) https://doi.org/10.1063/1.1622442

Abstract

View articletitled, Characterization of 7-nm-thick strained Ge-on-insulator layer fabricated by Ge-condensation technique

Open the PDF for in another window

Cyclotron resonance at microwave frequencies in two-dimensional hole system in AlGaAs/GaAs quantum wells

W. Pan; K. Lai; S. P. Bayrakci; N. P. Ong; D. C. Tsui; L. N. Pfeiffer; K. W. West

Appl. Phys. Lett. 83, 3519–3521 (2003) https://doi.org/10.1063/1.1623008

Abstract

View articletitled, Cyclotron resonance at microwave frequencies in two-dimensional hole system in AlGaAs/GaAs quantum wells

Open the PDF for in another window

Donor–donor binding in semiconductors: Engineering shallow donor levels for ZnTe

A. Janotti; Su-Huai Wei; S. B. Zhang

Appl. Phys. Lett. 83, 3522–3524 (2003) https://doi.org/10.1063/1.1622791

Abstract

View articletitled, Donor–donor binding in semiconductors: Engineering shallow donor levels for ZnTe

Open the PDF for in another window

On the nitrogen vacancy in GaN

D. C. Look; G. C. Farlow; P. J. Drevinsky; D. F. Bliss; J. R. Sizelove

Appl. Phys. Lett. 83, 3525–3527 (2003) https://doi.org/10.1063/1.1623009

Abstract

View articletitled, On the nitrogen vacancy in GaN

Open the PDF for in another window

MAGNETISM AND SUPERCONDUCTIVITY

Influence of the doping concentration of $Y_{1−y} {Ca}_{y} {Ba}_{2} {Cu}_{3} O_{7−δ}$ drain-source channels on the properties of superconducting field-effect devices

G. Yu. Logvenov; A. Sawa; C. W. Schneider; J. Mannhart

Appl. Phys. Lett. 83, 3528–3530 (2003) https://doi.org/10.1063/1.1622780

Abstract

View articletitled, Influence of the doping concentration of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Y</mi><mrow><mtext>1−y</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ca</mi><mrow><mi>y</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ba</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Cu</mi><mrow><mn>3</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mtext>7−δ</mtext></mrow></msub></math> drain-source channels on the properties of superconducting field-effect devices

Open the PDF for in another window

Large room-temperature spin-dependent tunneling magnetoresistance in polycrystalline ${Fe}_{3} O_{4}$ films

Hui Liu; E. Y. Jiang; H. L. Bai; R. K. Zheng; H. L. Wei; X. X. Zhang

Appl. Phys. Lett. 83, 3531–3533 (2003) https://doi.org/10.1063/1.1622440

Abstract

View articletitled, Large room-temperature spin-dependent tunneling magnetoresistance in polycrystalline <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Fe</mi><mrow><mn>3</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>4</mn></mrow></msub></math> films

Open the PDF for in another window

Spin blockade in ferromagnetic nanocontacts

M. Ye. Zhuravlev; E. Y. Tsymbal; S. S. Jaswal; A. V. Vedyayev; B. Dieny

Appl. Phys. Lett. 83, 3534–3536 (2003) https://doi.org/10.1063/1.1622986

Abstract

View articletitled, Spin blockade in ferromagnetic nanocontacts

Open the PDF for in another window

Large anomalous enhancement of perpendicular exchange bias by introduction of a nonmagnetic spacer between the ferromagnetic and antiferromagnetic layers

F. Garcia; J. Sort; B. Rodmacq; S. Auffret; B. Dieny

Appl. Phys. Lett. 83, 3537–3539 (2003) https://doi.org/10.1063/1.1619562

Abstract

View articletitled, Large anomalous enhancement of perpendicular exchange bias by introduction of a nonmagnetic spacer between the ferromagnetic and antiferromagnetic layers

Open the PDF for in another window

DIELECTRICS AND FERROELECTRICITY

Characteristics of ${LaAlO}_{3}$ gate dielectrics on Si grown by metalorganic chemical vapor deposition

Ai-Dong Li; Qi-Yue Shao; Hui-Qin Ling; Jin-Bo Cheng; Di Wu; Zhi-Guo Liu; Nai-Ben Ming; Cathy Wang; Hong-Wei Zhou; Bich-Yen Nguyen

Appl. Phys. Lett. 83, 3540–3542 (2003) https://doi.org/10.1063/1.1622794

Abstract

View articletitled, Characteristics of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">LaAlO</mi><mrow><mn>3</mn></mrow></msub></math> gate dielectrics on Si grown by metalorganic chemical vapor deposition

Open the PDF for in another window

Carbonate formation during post-deposition ambient exposure of high- $k$ dielectrics

Theodosia Gougousi; Dong Niu; Robert W. Ashcraft; Gregory N. Parsons

Appl. Phys. Lett. 83, 3543–3545 (2003) https://doi.org/10.1063/1.1623316

Abstract

View articletitled, Carbonate formation during post-deposition ambient exposure of high-<math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">k</mi></math> dielectrics

Open the PDF for in another window

La–silicate gate dielectrics fabricated by solid phase reaction between La metal and ${SiO}_{2}$ underlayers

Heiji Watanabe; Nobuyuki Ikarashi; Fuminori Ito

Appl. Phys. Lett. 83, 3546–3548 (2003) https://doi.org/10.1063/1.1622107

Abstract

View articletitled, La–silicate gate dielectrics fabricated by solid phase reaction between La metal and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mn>2</mn></mrow></msub></math> underlayers

Open the PDF for in another window

NANOSCALE SCIENCE AND DESIGN

Instability and dynamics of thin slipping films

Ashutosh Sharma; Kajari Kargupta

Appl. Phys. Lett. 83, 3549–3551 (2003) https://doi.org/10.1063/1.1618376

Abstract

View articletitled, Instability and dynamics of thin slipping films

Open the PDF for in another window

Enhanced field emission from printed carbon nanotubes by mechanical surface modification

T. J. Vink; M. Gillies; J. C. Kriege; H. W. J. J. van de Laar

Appl. Phys. Lett. 83, 3552–3554 (2003) https://doi.org/10.1063/1.1622789

Abstract

View articletitled, Enhanced field emission from printed carbon nanotubes by mechanical surface modification

Open the PDF for in another window

Quantum-dot optical temperature probes

Glen W. Walker; Vikram C. Sundar; Christina M. Rudzinski; Aetna W. Wun; Moungi G. Bawendi; Daniel G. Nocera

Appl. Phys. Lett. 83, 3555–3557 (2003) https://doi.org/10.1063/1.1620686

Abstract

View articletitled, Quantum-dot optical temperature probes

Open the PDF for in another window

Effect of germanium concentration and tunnel oxide thickness on nanocrystal formation and charge storage/retention characteristics of a trilayer memory structure

V. Ho; L. W. Teo; W. K. Choi; W. K. Chim; M. S. Tay; D. A. Antoniadis; E. A. Fitzgerald; A. Y. Du; C. H. Tung; R. Liu; A. T. S. Wee

Appl. Phys. Lett. 83, 3558–3560 (2003) https://doi.org/10.1063/1.1615840

Abstract

View articletitled, Effect of germanium concentration and tunnel oxide thickness on nanocrystal formation and charge storage/retention characteristics of a trilayer memory structure

Open the PDF for in another window

Structure and growth of monoclinic ${Mo}_{2} S_{3}$ nanorods

R. C. Che; N. Bai; L.-M. Peng

Appl. Phys. Lett. 83, 3561–3563 (2003) https://doi.org/10.1063/1.1623005

Abstract

View articletitled, Structure and growth of monoclinic <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Mo</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">S</mi><mrow><mn>3</mn></mrow></msub></math> nanorods

Open the PDF for in another window

Photoinduced conductivity changes in carbon nanotube transistors

Moonsub Shim; Giles P. Siddons

Appl. Phys. Lett. 83, 3564–3566 (2003) https://doi.org/10.1063/1.1622450

Abstract

View articletitled, Photoinduced conductivity changes in carbon nanotube transistors

Open the PDF for in another window

Determination of carrier density in Te-doped Bi nanowires

Yu-Ming Lin; M. S. Dresselhaus

Appl. Phys. Lett. 83, 3567–3569 (2003) https://doi.org/10.1063/1.1614443

Abstract

View articletitled, Determination of carrier density in Te-doped Bi nanowires

Open the PDF for in another window

Binding energy of parallel carbon nanotubes

B. Chen; M. Gao; J. M. Zuo; S. Qu; B. Liu; Y. Huang

Appl. Phys. Lett. 83, 3570–3571 (2003) https://doi.org/10.1063/1.1623013

Abstract

View articletitled, Binding energy of parallel carbon nanotubes

Open the PDF for in another window

Ultrafast intraband spectroscopy of electron capture and relaxation in InAs/GaAs quantum dots

T. Müller; F. F. Schrey; G. Strasser; K. Unterrainer

Appl. Phys. Lett. 83, 3572–3574 (2003) https://doi.org/10.1063/1.1622432

Abstract

View articletitled, Ultrafast intraband spectroscopy of electron capture and relaxation in InAs/GaAs quantum dots

Open the PDF for in another window

Tuning the properties of magnetic CdMnTe quantum dots

S. Mackowski; H. E. Jackson; L. M. Smith; J. Kossut; G. Karczewski; W. Heiss

Appl. Phys. Lett. 83, 3575–3577 (2003) https://doi.org/10.1063/1.1622438

Abstract

View articletitled, Tuning the properties of magnetic CdMnTe quantum dots

Open the PDF for in another window

Thermal emission of electrons from selected s-shell configurations in InAs/GaAs quantum dots

O. Engström; M. Malmkvist; Y. Fu; H. Ö. Olafsson; E. Ö. Sveinbjörnsson

Appl. Phys. Lett. 83, 3578–3580 (2003) https://doi.org/10.1063/1.1622437

Abstract

View articletitled, Thermal emission of electrons from selected s-shell configurations in InAs/GaAs quantum dots

Open the PDF for in another window

Tailoring structure and electrical properties of carbon nanotubes using kilo-electron-volt ions

B. Q. Wei; J. D’Arcy-Gall; P. M. Ajayan; G. Ramanath

Appl. Phys. Lett. 83, 3581–3583 (2003) https://doi.org/10.1063/1.1622781

Abstract

View articletitled, Tailoring structure and electrical properties of carbon nanotubes using kilo-electron-volt ions

Open the PDF for in another window

Synthesis, structure, and photoluminescence of very thin and wide alpha silicon nitride $(α- {Si}_{3} N_{4})$ single-crystalline nanobelts

Long-Wei Yin; Yoshio Bando; Ying-Chun Zhu; Yu-Bao Li

Appl. Phys. Lett. 83, 3584–3586 (2003) https://doi.org/10.1063/1.1623940

Abstract

View articletitled, Synthesis, structure, and photoluminescence of very thin and wide alpha silicon nitride <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">(α-</mi><msub xmlns=""><mi mathvariant="normal">Si</mi><mrow><mn>3</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">N</mi><mrow><mn>4</mn></mrow></msub><mi xmlns="">)</mi></math> single-crystalline nanobelts

Open the PDF for in another window

Local anisotropy in strained manganite thin films

N. M. Souza-Neto; A. Y. Ramos; H. C. N. Tolentino; E. Favre-Nicolin; L. Ranno

Appl. Phys. Lett. 83, 3587–3589 (2003) https://doi.org/10.1063/1.1623936

Abstract

View articletitled, Local anisotropy in strained manganite thin films

Open the PDF for in another window

Titanium metal quantum-dot composite induced by subplantation

J. P. Zhao; D. X. Huang; A. J. Jacobson; J. W. Rabalais

Appl. Phys. Lett. 83, 3590–3592 (2003) https://doi.org/10.1063/1.1622784

Abstract

View articletitled, Titanium metal quantum-dot composite induced by subplantation

Open the PDF for in another window

Selective formation of ZnO nanodots on nanopatterned substrates by metalorganic chemical vapor deposition

Sang-Woo Kim; Teruhisa Kotani; Masaya Ueda; Shizuo Fujita; Shigeo Fujita

Appl. Phys. Lett. 83, 3593–3595 (2003) https://doi.org/10.1063/1.1622795

Abstract

View articletitled, Selective formation of ZnO nanodots on nanopatterned substrates by metalorganic chemical vapor deposition

Open the PDF for in another window

DEVICE PHYSICS

Fundamental mode 5 GHz surface-acoustic-wave filters using optical lithography

T. Makkonen; V. P. Plessky; W. Steichen; S. Chamaly; C. Poirel; M. Solal; M. M. Salomaa

Appl. Phys. Lett. 83, 3596–3598 (2003) https://doi.org/10.1063/1.1618366

Abstract

View articletitled, Fundamental mode 5 GHz surface-acoustic-wave filters using optical lithography

Open the PDF for in another window

Polymer thin films containing Eu(III) complex as lanthanide lasing medium

Yasuchika Hasegawa; Yuji Wada; Shozo Yanagida; Hideki Kawai; Naoki Yasuda; Toshihiko Nagamura

Appl. Phys. Lett. 83, 3599–3601 (2003) https://doi.org/10.1063/1.1616207

Abstract

View articletitled, Polymer thin films containing Eu(III) complex as lanthanide lasing medium

Open the PDF for in another window

High-resolution bistable nematic liquid crystal device realized on orientational surface patterns

Jong-Hyun Kim; Makoto Yoneya; Hiroshi Yokoyama

Appl. Phys. Lett. 83, 3602–3604 (2003) https://doi.org/10.1063/1.1623011

Abstract

View articletitled, High-resolution bistable nematic liquid crystal device realized on orientational surface patterns

Open the PDF for in another window

High-power operation of electroabsorption modulators

Zhixi Bian; James Christofferson; Ali Shakouri; Peter Kozodoy

Appl. Phys. Lett. 83, 3605–3607 (2003) https://doi.org/10.1063/1.1623338

Abstract

View articletitled, High-power operation of electroabsorption modulators

Open the PDF for in another window

Improvement of near-ultraviolet InGaN/GaN light-emitting diodes by inserting an in situ rough ${SiN}_{x}$ interlayer in n-GaN layers

Ru-Chin Tu; Chang-Cheng Chuo; Shyi-Ming Pan; Yu-Mei Fan; Ching-En Tsai; Te-Chung Wang; Chun-Ju Tun; Gou-Chung Chi; Bing-Chi Lee; Chien-Ping Lee

Appl. Phys. Lett. 83, 3608–3610 (2003) https://doi.org/10.1063/1.1622441

Abstract

View articletitled, Improvement of near-ultraviolet InGaN/GaN light-emitting diodes by inserting an in situ rough <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiN</mi><mrow><mi>x</mi></mrow></msub></math> interlayer in n-GaN layers

Open the PDF for in another window

Electric field screening in polymer light-emitting diodes

P. A. Lane; J. C. deMello; R. B. Fletcher; M. Bernius

Appl. Phys. Lett. 83, 3611–3613 (2003) https://doi.org/10.1063/1.1623014

Abstract

View articletitled, Electric field screening in polymer light-emitting diodes

Open the PDF for in another window

Voltage-controlled spectral tuning of photoelectric signals in a conducting polymer-bacteriorhodopsin device

A. G. Manoj; K. S. Narayan

Appl. Phys. Lett. 83, 3614–3616 (2003) https://doi.org/10.1063/1.1623007

Abstract

View articletitled, Voltage-controlled spectral tuning of photoelectric signals in a conducting polymer-bacteriorhodopsin device

Open the PDF for in another window

Highly sensitive ultraviolet detector based on ${ZnO/LiNbO}_{3}$ hybrid surface acoustic wave filter

Parmanand Sharma; K. Sreenivas

Appl. Phys. Lett. 83, 3617–3619 (2003) https://doi.org/10.1063/1.1622436

Abstract

View articletitled, Highly sensitive ultraviolet detector based on <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">ZnO/LiNbO</mi><mrow><mn>3</mn></mrow></msub></math> hybrid surface acoustic wave filter

Open the PDF for in another window

INTERDISCIPLINARY AND GENERAL PHYSICS

Atomic resolution noncontact atomic force/scanning tunneling microscopy using a 1 MHz quartz resonator

Seiji Heike; Tomihiro Hashizume

Appl. Phys. Lett. 83, 3620–3622 (2003) https://doi.org/10.1063/1.1623012

Abstract

View articletitled, Atomic resolution noncontact atomic force/scanning tunneling microscopy using a 1 MHz quartz resonator

Open the PDF for in another window

Complete characterization of the nonlinear spatial distribution induced in poled silica glass with a submicron resolution

A. Kudlinski; Y. Quiquempois; M. Lelek; H. Zeghlache; G. Martinelli

Appl. Phys. Lett. 83, 3623–3625 (2003) https://doi.org/10.1063/1.1622449

Abstract

View articletitled, Complete characterization of the nonlinear spatial distribution induced in poled silica glass with a submicron resolution

Open the PDF for in another window

COMMENTS

Comment on “AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy” [Appl. Phys. Lett. 81, 1729 (2002)]

A. E. Belyaev; C. T. Foxon; S. V. Novikov; O. Makarovsky; L. Eaves; M. J. Kappers; C. J. Humphreys

Appl. Phys. Lett. 83, 3626–3627 (2003) https://doi.org/10.1063/1.1622987

View articletitled, Comment on “AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy” [Appl. Phys. Lett. 81, 1729 (2002)]

Open the PDF for in another window

Response to “Comment on ‘AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy’ ” [Appl. Phys. Lett. 83, 3626 (2003)]

Akihiko Kikuchi; Ryo Bannai; Katsumi Kishino; Chia-Ming Lee; Jen-Inn Chyi

Appl. Phys. Lett. 83, 3628 (2003) https://doi.org/10.1063/1.1622988

View articletitled, Response to “Comment on ‘AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy’ ” [Appl. Phys. Lett. 83, 3626 (2003)]

Open the PDF for in another window

Issues

LASERS, OPTICS, AND OPTOELECTRONICS

PLASMAS AND ELECTRICAL DISCHARGES

STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

ELECTRONIC TRANSPORT AND SEMICONDUCTORS

MAGNETISM AND SUPERCONDUCTIVITY

DIELECTRICS AND FERROELECTRICITY

NANOSCALE SCIENCE AND DESIGN

DEVICE PHYSICS

INTERDISCIPLINARY AND GENERAL PHYSICS

COMMENTS

RSS

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

This Feature Is Available To Subscribers Only