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LASERS, OPTICS, AND OPTOELECTRONICS

Field-effect-induced midinfrared electroluminescence of a quantum-wire-cascade structure by remote δ-doping

Stefan Schmult; Ingo Keck; Thomas Herrle; Werner Wegscheider; Max Bichler; Dieter Schuh; Gerhard Abstreiter

Appl. Phys. Lett. 83, 1909–1911 (2003) https://doi.org/10.1063/1.1609041

Abstract

View articletitled, Field-effect-induced midinfrared electroluminescence of a quantum-wire-cascade structure by remote δ-doping

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Infrared photonic crystal fiber

E. Rave; K. Roodenko; A. Katzir

Appl. Phys. Lett. 83, 1912–1914 (2003) https://doi.org/10.1063/1.1608481

Abstract

View articletitled, Infrared photonic crystal fiber

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Experimental demonstration of a high quality factor photonic crystal microcavity

Kartik Srinivasan; Paul E. Barclay; Oskar Painter; Jianxin Chen; Alfred Y. Cho; Claire Gmachl

Appl. Phys. Lett. 83, 1915–1917 (2003) https://doi.org/10.1063/1.1606866

Abstract

View articletitled, Experimental demonstration of a high quality factor photonic crystal microcavity

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Concept of a liquid-crystal polarization beamsplitter based on binary phase gratings

Jae-Hong Park; Chang-Jae Yu; Jinyool Kim; Sung-Yeop Chung; Sin-Doo Lee

Appl. Phys. Lett. 83, 1918–1920 (2003) https://doi.org/10.1063/1.1609042

Abstract

View articletitled, Concept of a liquid-crystal polarization beamsplitter based on binary phase gratings

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Room-temperature operation of InGaAs/AlInAs quantum cascade lasers grown by metalorganic vapor phase epitaxy

R. P. Green; A. Krysa; J. S. Roberts; D. G. Revin; L. R. Wilson; E. A. Zibik; W. H. Ng; J. W. Cockburn

Appl. Phys. Lett. 83, 1921–1922 (2003) https://doi.org/10.1063/1.1609055

Abstract

View articletitled, Room-temperature operation of InGaAs/AlInAs quantum cascade lasers grown by metalorganic vapor phase epitaxy

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Demonstration of a microelectromechanical tunable asymmetric Fabry–Pérot quantum well modulator

W. S. Rabinovich; T. H. Stievater; N. A. Papanicolaou; D. S. Katzer; P. G. Goetz

Appl. Phys. Lett. 83, 1923–1925 (2003) https://doi.org/10.1063/1.1606499

Abstract

View articletitled, Demonstration of a microelectromechanical tunable asymmetric Fabry–Pérot quantum well modulator

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High-power room-temperature continuous wave operation of 2.7 and 2.8 μm In(Al)GaAsSb/GaSb diode lasers

J. G. Kim; L. Shterengas; R. U. Martinelli; G. L. Belenky

Appl. Phys. Lett. 83, 1926–1928 (2003) https://doi.org/10.1063/1.1605245

Abstract

View articletitled, High-power room-temperature continuous wave operation of 2.7 and 2.8 μm In(Al)GaAsSb/GaSb diode lasers

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Continuous-wave distributed-feedback quantum-cascade lasers on a Peltier cooler

Thierry Aellen; Stéphane Blaser; Mattias Beck; Daniel Hofstetter; Jérôme Faist; Emilio Gini

Appl. Phys. Lett. 83, 1929–1931 (2003) https://doi.org/10.1063/1.1609044

Abstract

View articletitled, Continuous-wave distributed-feedback quantum-cascade lasers on a Peltier cooler

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PLASMAS AND ELECTRICAL DISCHARGES

High-efficiency, high-power, stable 172 nm xenon excimer light source

M. Salvermoser; D. E. Murnick

Appl. Phys. Lett. 83, 1932–1934 (2003) https://doi.org/10.1063/1.1605798

Abstract

View articletitled, High-efficiency, high-power, stable 172 nm xenon excimer light source

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Kinetics of hydrogen atoms in high-density ${CF}_{4} / H_{2}$ plasmas studied by $(2+1)$ -photon laser-induced fluorescence spectroscopy

K. Sasaki; M. Okamoto

Appl. Phys. Lett. 83, 1935–1937 (2003) https://doi.org/10.1063/1.1609244

Abstract

View articletitled, Kinetics of hydrogen atoms in high-density <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CF</mi><mrow><mn>4</mn></mrow></msub><mi xmlns="">/</mi><msub xmlns=""><mi mathvariant="normal">H</mi><mrow><mn>2</mn></mrow></msub></math> plasmas studied by <math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">(2+1)</mtext></math>-photon laser-induced fluorescence spectroscopy

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Low-noise microwave magnetrons by azimuthally varying axial magnetic field

V. B. Neculaes; R. M. Gilgenbach; Y. Y. Lau

Appl. Phys. Lett. 83, 1938–1940 (2003) https://doi.org/10.1063/1.1609040

Abstract

View articletitled, Low-noise microwave magnetrons by azimuthally varying axial magnetic field

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Stimulated resonance Raman scattering from single crystals of a thiophene/phenylene co-oligomer

Hisao Yanagi; Atsutoshi Yoshiki; Shu Hotta; Shunsuke Kobayashi

Appl. Phys. Lett. 83, 1941–1943 (2003) https://doi.org/10.1063/1.1605233

Abstract

View articletitled, Stimulated resonance Raman scattering from single crystals of a thiophene/phenylene co-oligomer

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Epitaxial electrodeposition of ${Cu}_{2} O$ films onto InP(001)

Run Liu; Eric W. Bohannan; Jay A. Switzer; Fumiyasu Oba; Frank Ernst

Appl. Phys. Lett. 83, 1944–1946 (2003) https://doi.org/10.1063/1.1606503

Abstract

View articletitled, Epitaxial electrodeposition of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Cu</mi><mrow><mn>2</mn></mrow></msub><mi mathvariant="normal" xmlns="">O</mi></math> films onto InP(001)

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Blue photoluminescence of $α- {Ga}_{2} S_{3}$ and $α- {Ga}_{2} S_{3} : {Fe}^{2+}$ single crystals

Chang-Sun Yoon; F. D. Medina; L. Martinez; Tae-Young Park; Moon-Seog Jin; Wha-Tek Kim

Appl. Phys. Lett. 83, 1947–1949 (2003) https://doi.org/10.1063/1.1609254

Abstract

View articletitled, Blue photoluminescence of <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">α-</mi><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">S</mi><mrow><mn>3</mn></mrow></msub></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">α-</mi><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">S</mi><mrow><mn>3</mn></mrow></msub><mi xmlns="">:</mi><msup xmlns=""><mi mathvariant="normal">Fe</mi><mrow><mtext>2+</mtext></mrow></msup></math> single crystals

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Time dependence of energy dissipation in resonating silicon cantilevers in ultrahigh vacuum

Takahito Ono; Dong F. Wang; Masayoshi Esashi

Appl. Phys. Lett. 83, 1950–1952 (2003) https://doi.org/10.1063/1.1608485

Abstract

View articletitled, Time dependence of energy dissipation in resonating silicon cantilevers in ultrahigh vacuum

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Time evolution of the depth profile of {113} defects during transient enhanced diffusion in silicon

B. Colombeau; N. E. B. Cowern; F. Cristiano; P. Calvo; N. Cherkashin; Y. Lamrani; A. Claverie

Appl. Phys. Lett. 83, 1953–1955 (2003) https://doi.org/10.1063/1.1608489

Abstract

View articletitled, Time evolution of the depth profile of {113} defects during transient enhanced diffusion in silicon

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Role of the indium–carbon interaction on In diffusion and activation in Si

Antonino La Magna; Silvia Scalese; Paola Alippi; Giovanni Mannino; Vittorio Privitera; Massimo Bersani; Christoph Zechner

Appl. Phys. Lett. 83, 1956–1958 (2003) https://doi.org/10.1063/1.1609253

Abstract

View articletitled, Role of the indium–carbon interaction on In diffusion and activation in Si

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Mechanism of reliability failure in Cu interconnects with ultralow-κ materials

N. L. Michael; Choong-Un Kim; P. Gillespie; R. Augur

Appl. Phys. Lett. 83, 1959–1961 (2003) https://doi.org/10.1063/1.1609242

Abstract

View articletitled, Mechanism of reliability failure in Cu interconnects with ultralow-κ materials

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Microstructural influences on stress migration in electroplated Cu metallization

A. Sekiguchi; J. Koike; K. Maruyama

Appl. Phys. Lett. 83, 1962–1964 (2003) https://doi.org/10.1063/1.1609238

Abstract

View articletitled, Microstructural influences on stress migration in electroplated Cu metallization

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Electron-beam-induced segregation in InGaN/GaN multiple-quantum wells

J. P. O’Neill; I. M. Ross; A. G. Cullis; T. Wang; P. J. Parbrook

Appl. Phys. Lett. 83, 1965–1967 (2003) https://doi.org/10.1063/1.1606105

Abstract

View articletitled, Electron-beam-induced segregation in InGaN/GaN multiple-quantum wells

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Strong anti-Stokes luminescence from $H^{+}$ -irradiated diamond

Y. Xu; H. Naramoto; K. Narumi; K. Miyashita; T. Kamiya; T. Sakai

Appl. Phys. Lett. 83, 1968–1970 (2003) https://doi.org/10.1063/1.1608465

Abstract

View articletitled, Strong anti-Stokes luminescence from <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">H</mi><mrow><mi>+</mi></mrow></msup></math>-irradiated diamond

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X-ray diffraction measurement of doping induced lattice mismatch in n-type 4H-SiC epilayers grown on p-type substrates

Robert S. Okojie; Thomas Holzheu; XianRong Huang; Michael Dudley

Appl. Phys. Lett. 83, 1971–1973 (2003) https://doi.org/10.1063/1.1606497

Abstract

View articletitled, X-ray diffraction measurement of doping induced lattice mismatch in n-type 4H-SiC epilayers grown on p-type substrates

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Raman scattering in ZnO thin films doped with Fe, Sb, Al, Ga, and Li

C. Bundesmann; N. Ashkenov; M. Schubert; D. Spemann; T. Butz; E. M. Kaidashev; M. Lorenz; M. Grundmann

Appl. Phys. Lett. 83, 1974–1976 (2003) https://doi.org/10.1063/1.1609251

Abstract

View articletitled, Raman scattering in ZnO thin films doped with Fe, Sb, Al, Ga, and Li

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Microstructure of lateral epitaxial overgrown InAs on (100) GaAs substrates

G. Suryanarayanan; Anish A. Khandekar; Thomas F. Kuech; Susan E. Babcock

Appl. Phys. Lett. 83, 1977–1979 (2003) https://doi.org/10.1063/1.1609231

Abstract

View articletitled, Microstructure of lateral epitaxial overgrown InAs on (100) GaAs substrates

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Temperature stability for silicon-based photonic band-gap structures

S. M. Weiss; M. Molinari; P. M. Fauchet

Appl. Phys. Lett. 83, 1980–1982 (2003) https://doi.org/10.1063/1.1609249

Abstract

View articletitled, Temperature stability for silicon-based photonic band-gap structures

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Resonant absorption quenching and enhancement of optical nonlinearity in ${Au:BaTiO}_{3}$ composite films by adding Fe nanoclusters

W. T. Wang; Z. H. Chen; G. Yang; D. Y. Guan; G. Z. Yang; Y. L. Zhou; H. B. Lu

Appl. Phys. Lett. 83, 1983–1985 (2003) https://doi.org/10.1063/1.1606876

Abstract

View articletitled, Resonant absorption quenching and enhancement of optical nonlinearity in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Au:BaTiO</mi><mrow><mn>3</mn></mrow></msub></math> composite films by adding Fe nanoclusters

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Young modulus dependence of nanoscopic friction coefficient in hard coatings

Elisa Riedo; Harald Brune

Appl. Phys. Lett. 83, 1986–1988 (2003) https://doi.org/10.1063/1.1609234

Abstract

View articletitled, Young modulus dependence of nanoscopic friction coefficient in hard coatings

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Effects of silicon-on-insulator substrate on the residual stress within 3C-SiC/Si thin films

J.-H. Park; J. H. Kim; Y. Kim; B.-T. Lee; S.-J. Jang; C.-K. Moon; H.-J. Song

Appl. Phys. Lett. 83, 1989–1991 (2003) https://doi.org/10.1063/1.1608495

Abstract

View articletitled, Effects of silicon-on-insulator substrate on the residual stress within 3C-SiC/Si thin films

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1.55 μm emission from GaInNAs with indium-induced increase of N concentration

W. Zhou; K. Uesugi; I. Suemune

Appl. Phys. Lett. 83, 1992–1994 (2003) https://doi.org/10.1063/1.1606886

Abstract

View articletitled, 1.55 μm emission from GaInNAs with indium-induced increase of N concentration

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Band offset determination of ${Zn}_{0.53} {Cd}_{0.47} {Se/Zn}_{0.29} {Cd}_{0.24} {Mg}_{0.47} Se$

Martı́n Muñoz; Hong Lu; Xuecong Zhou; Maria C. Tamargo; Fred H. Pollak

Appl. Phys. Lett. 83, 1995–1997 (2003) https://doi.org/10.1063/1.1606875

Abstract

View articletitled, Band offset determination of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Zn</mi><mrow><mtext>0.53</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Cd</mi><mrow><mtext>0.47</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Se/Zn</mi><mrow><mtext>0.29</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Cd</mi><mrow><mtext>0.24</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Mg</mi><mrow><mtext>0.47</mtext></mrow></msub><mi mathvariant="normal" xmlns="">Se</mi></math>

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Generalized Einstein relation for disordered semiconductors with exponential distributions of tail states and square-root distributions of band states

Thanh H. Nguyen; Stephen K. O’Leary

Appl. Phys. Lett. 83, 1998–2000 (2003) https://doi.org/10.1063/1.1604178

Abstract

View articletitled, Generalized Einstein relation for disordered semiconductors with exponential distributions of tail states and square-root distributions of band states

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Electrical contacts to ultrananocrystalline diamond

J. E. Gerbi; O. Auciello; J. Birrell; D. M. Gruen; B. W. Alphenaar; J. A. Carlisle

Appl. Phys. Lett. 83, 2001–2003 (2003) https://doi.org/10.1063/1.1609043

Abstract

View articletitled, Electrical contacts to ultrananocrystalline diamond

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Evaluation of the electrical properties and interfacial reactions for the polycrystalline ${Si}_{1−x} {Ge}_{x} (x=0,0.6)/ {HfO}_{2}$ gate stack

Sung Kwan Kang; Suheun Nam; Byung Gi Min; Seok Woo Nam; Dae-Hong Ko; Mann-Ho Cho

Appl. Phys. Lett. 83, 2004–2006 (2003) https://doi.org/10.1063/1.1608487

Abstract

View articletitled, Evaluation of the electrical properties and interfacial reactions for the polycrystalline <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Si</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ge</mi><mrow><mi>x</mi></mrow></msub><mtext xmlns="">(x=0,0.6)/</mtext><msub xmlns=""><mi mathvariant="normal">HfO</mi><mrow><mn>2</mn></mrow></msub></math> gate stack

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Doping of chalcopyrites by hydrogen

Çetin Kılıç; Alex Zunger

Appl. Phys. Lett. 83, 2007–2009 (2003) https://doi.org/10.1063/1.1608494

Abstract

View articletitled, Doping of chalcopyrites by hydrogen

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Fabrication of stable wide-band-gap ZnO/MgO multilayer thin films

P. Bhattacharya; Rasmi R. Das; R. S. Katiyar

Appl. Phys. Lett. 83, 2010–2012 (2003) https://doi.org/10.1063/1.1609250

Abstract

View articletitled, Fabrication of stable wide-band-gap ZnO/MgO multilayer thin films

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MAGNETISM AND SUPERCONDUCTIVITY

Positive isotropic resonance field shift of exchange coupled wedged-permalloy/FeMn bilayers

S. M. Zhou; S. J. Yuan; L. Wang; M. Lu; J. Du; A. Hu; J. T. Song

Appl. Phys. Lett. 83, 2013–2015 (2003) https://doi.org/10.1063/1.1604937

Abstract

View articletitled, Positive isotropic resonance field shift of exchange coupled wedged-permalloy/FeMn bilayers

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Spin-polarized scanning tunneling microscope for imaging the in-plane magnetization

U. Schlickum; W. Wulfhekel; J. Kirschner

Appl. Phys. Lett. 83, 2016–2018 (2003) https://doi.org/10.1063/1.1606867

Abstract

View articletitled, Spin-polarized scanning tunneling microscope for imaging the in-plane magnetization

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Sonochemical modification of the superconducting properties of ${MgB}_{2}$

Tanya Prozorov; Ruslan Prozorov; Alexey Snezhko; Kenneth S. Suslick

Appl. Phys. Lett. 83, 2019–2021 (2003) https://doi.org/10.1063/1.1609248

Abstract

View articletitled, Sonochemical modification of the superconducting properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">MgB</mi><mrow><mn>2</mn></mrow></msub></math>

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Effect of helical-induced anisotropy on the magnetoinductance response of Co-based amorphous wires

I. Betancourt; R. Valenzuela

Appl. Phys. Lett. 83, 2022–2024 (2003) https://doi.org/10.1063/1.1610811

Abstract

View articletitled, Effect of helical-induced anisotropy on the magnetoinductance response of Co-based amorphous wires

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DIELECTRICS AND FERROELECTRICITY

Behavior of hydrogen in high dielectric constant oxide gate insulators

P. W. Peacock; J. Robertson

Appl. Phys. Lett. 83, 2025–2027 (2003) https://doi.org/10.1063/1.1609245

Abstract

View articletitled, Behavior of hydrogen in high dielectric constant oxide gate insulators

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Surface deformation and ferroelectric domain switching induced by a force microscope tip on a La-modified ${PbTiO}_{3}$ thin film

M. Labardi; C. Polop; V. Likodimos; L. Pardi; M. Allegrini; E. Vasco; C. Zaldo

Appl. Phys. Lett. 83, 2028–2030 (2003) https://doi.org/10.1063/1.1606100

Abstract

View articletitled, Surface deformation and ferroelectric domain switching induced by a force microscope tip on a La-modified <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">PbTiO</mi><mrow><mn>3</mn></mrow></msub></math> thin film

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Dielectric relaxation behavior in barium stannate titanate ferroelectric ceramics with diffused phase transition

Wei Xiaoyong; Feng Yujun; Yao Xi

Appl. Phys. Lett. 83, 2031–2033 (2003) https://doi.org/10.1063/1.1609037

Abstract

View articletitled, Dielectric relaxation behavior in barium stannate titanate ferroelectric ceramics with diffused phase transition

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Dielectric properties of organic monolayers directly bonded on silicon probed by current sensing atomic force microscope

Jianwei Zhao; Kohei Uosaki

Appl. Phys. Lett. 83, 2034–2036 (2003) https://doi.org/10.1063/1.1609237

Abstract

View articletitled, Dielectric properties of organic monolayers directly bonded on silicon probed by current sensing atomic force microscope

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Elastic responses to different electric-field directions in relaxor ferroelectric ${Pb[(Zn}_{1/3} {Nb}_{2/3})_{0.91} {Ti}_{0.09}] O_{3}$ single crystals

Jae-Hyeon Ko; Do Han Kim; Seiji Kojima

Appl. Phys. Lett. 83, 2037–2039 (2003) https://doi.org/10.1063/1.1609247

Abstract

View articletitled, Elastic responses to different electric-field directions in relaxor ferroelectric <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Pb[(Zn</mi><mrow><mtext>1/3</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Nb</mi><mrow><mtext>2/3</mtext></mrow></msub><msub xmlns=""><mi>)</mi><mrow><mtext>0.91</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ti</mi><mrow><mtext>0.09</mtext></mrow></msub><mi xmlns="">]</mi><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>3</mn></mrow></msub></math> single crystals

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Interweaving domain configurations in [001]-poled rhombohedral phase $0.68 {Pb(Mg}_{1/3} {Nb}_{2/3}) O_{3} –0.32 {PbTiO}_{3}$ single crystals

Jiaping Han; Wenwu Cao

Appl. Phys. Lett. 83, 2040–2042 (2003) https://doi.org/10.1063/1.1605796

Abstract

View articletitled, Interweaving domain configurations in [001]-poled rhombohedral phase <math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">0.68</mtext><msub xmlns=""><mi mathvariant="normal">Pb(Mg</mi><mrow><mtext>1/3</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Nb</mi><mrow><mtext>2/3</mtext></mrow></msub><mi xmlns="">)</mi><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>3</mn></mrow></msub><mtext xmlns="">–0.32</mtext><msub xmlns=""><mi mathvariant="normal">PbTiO</mi><mrow><mn>3</mn></mrow></msub></math> single crystals

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NANOSCALE SCIENCE AND DESIGN

Polarization-dependent photoluminescence-excitation spectra of one-dimensional exciton and continuum states in T-shaped quantum wires

Hirotake Itoh; Yuhei Hayamizu; Masahiro Yoshita; Hidefumi Akiyama; Loren N. Pfeiffer; Ken W. West; Marzena H. Szymanska; Peter B. Littlewood

Appl. Phys. Lett. 83, 2043–2045 (2003) https://doi.org/10.1063/1.1604177

Abstract

View articletitled, Polarization-dependent photoluminescence-excitation spectra of one-dimensional exciton and continuum states in T-shaped quantum wires

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Physical constraints on magnetic quantum cellular automata

M. C. B. Parish; M. Forshaw

Appl. Phys. Lett. 83, 2046–2048 (2003) https://doi.org/10.1063/1.1608492

Abstract

View articletitled, Physical constraints on magnetic quantum cellular automata

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Self-organized nanostructures in the Ti–Al–N system

Paul H. Mayrhofer; Anders Hörling; Lennart Karlsson; Jacob Sjölén; Tommy Larsson; Christian Mitterer; Lars Hultman

Appl. Phys. Lett. 83, 2049–2051 (2003) https://doi.org/10.1063/1.1608464

Abstract

View articletitled, Self-organized nanostructures in the Ti–Al–N system

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Single-electron transistors in heterostructure nanowires

C. Thelander; T. Mårtensson; M. T. Björk; B. J. Ohlsson; M. W. Larsson; L. R. Wallenberg; L. Samuelson

Appl. Phys. Lett. 83, 2052–2054 (2003) https://doi.org/10.1063/1.1606889

Abstract

View articletitled, Single-electron transistors in heterostructure nanowires

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Spatially controlled, nanoparticle-free growth of InP nanowires

P. J. Poole; J. Lefebvre; J. Fraser

Appl. Phys. Lett. 83, 2055–2057 (2003) https://doi.org/10.1063/1.1608486

Abstract

View articletitled, Spatially controlled, nanoparticle-free growth of InP nanowires

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Effect of annealing profile on defect annihilation, crystallinity and size distribution of germanium nanodots in silicon oxide matrix

E. W. H. Kan; W. K. Choi; C. C. Leoy; W. K. Chim; D. A. Antoniadis; E. A. Fitzgerald

Appl. Phys. Lett. 83, 2058–2060 (2003) https://doi.org/10.1063/1.1608480

Abstract

View articletitled, Effect of annealing profile on defect annihilation, crystallinity and size distribution of germanium nanodots in silicon oxide matrix

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Large-quantity free-standing ZnO nanowires

D. Banerjee; J. Y. Lao; D. Z. Wang; J. Y. Huang; Z. F. Ren; D. Steeves; B. Kimball; M. Sennett

Appl. Phys. Lett. 83, 2061–2063 (2003) https://doi.org/10.1063/1.1609036

Abstract

View articletitled, Large-quantity free-standing ZnO nanowires

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Electron-beam-induced deposition using a subnanometer-sized probe of high-energy electrons

K. Mitsuishi; M. Shimojo; M. Han; K. Furuya

Appl. Phys. Lett. 83, 2064–2066 (2003) https://doi.org/10.1063/1.1611274

Abstract

View articletitled, Electron-beam-induced deposition using a subnanometer-sized probe of high-energy electrons

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DEVICE PHYSICS

Tunable organic transistors that use microfluidic source and drain electrodes

George Maltezos; Robert Nortrup; Seokwoo Jeon; Jana Zaumseil; John A. Rogers

Appl. Phys. Lett. 83, 2067–2069 (2003) https://doi.org/10.1063/1.1609056

Abstract

View articletitled, Tunable organic transistors that use microfluidic source and drain electrodes

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Additive jet printing of polymer thin-film transistors

Kateri E. Paul; William S. Wong; Steven E. Ready; Robert A. Street

Appl. Phys. Lett. 83, 2070–2072 (2003) https://doi.org/10.1063/1.1609233

Abstract

View articletitled, Additive jet printing of polymer thin-film transistors

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Combinatorial fabrication and study of doped-layer-thickness-dependent color evolution in bright small molecular organic light-emitting devices

K. O. Cheon; J. Shinar

Appl. Phys. Lett. 83, 2073–2075 (2003) https://doi.org/10.1063/1.1601674

Abstract

View articletitled, Combinatorial fabrication and study of doped-layer-thickness-dependent color evolution in bright small molecular organic light-emitting devices

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INTERDISCIPLINARY AND GENERAL PHYSICS

Kinetic control of a particle by voltage sequence for a nonimpact electrostatic micromanipulation

Shigeki Saito; Hideo Himeno; Kunio Takahashi; Masataka Urago

Appl. Phys. Lett. 83, 2076–2078 (2003) https://doi.org/10.1063/1.1609039

Abstract

View articletitled, Kinetic control of a particle by voltage sequence for a nonimpact electrostatic micromanipulation

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Issues

LASERS, OPTICS, AND OPTOELECTRONICS

PLASMAS AND ELECTRICAL DISCHARGES

STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

ELECTRONIC TRANSPORT AND SEMICONDUCTORS

MAGNETISM AND SUPERCONDUCTIVITY

DIELECTRICS AND FERROELECTRICITY

NANOSCALE SCIENCE AND DESIGN

DEVICE PHYSICS

INTERDISCIPLINARY AND GENERAL PHYSICS

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