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LASERS, OPTICS, AND OPTOELECTRONICS

Fluid detection with photonic crystal-based multichannel waveguides

J. Topol’ančik; P. Bhattacharya; J. Sabarinathan; P.-C. Yu

Appl. Phys. Lett. 82, 1143–1145 (2003) https://doi.org/10.1063/1.1554772

Abstract

View articletitled, Fluid detection with photonic crystal-based multichannel waveguides

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Femtosecond laser aperturless near-field nanomachining of metals assisted by scanning probe microscopy

A. Chimmalgi; T. Y. Choi; C. P. Grigoropoulos; K. Komvopoulos

Appl. Phys. Lett. 82, 1146–1148 (2003) https://doi.org/10.1063/1.1555693

Abstract

View articletitled, Femtosecond laser aperturless near-field nanomachining of metals assisted by scanning probe microscopy

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High-pressure measurements of mid-infrared electroluminescence from InAs light-emitting diodes at 3.3 μm

S. A. Choulis; A. Andreev; M. Merrick; A. R. Adams; B. N. Murdin; A. Krier; V. V. Sherstnev

Appl. Phys. Lett. 82, 1149–1151 (2003) https://doi.org/10.1063/1.1555276

Abstract

View articletitled, High-pressure measurements of mid-infrared electroluminescence from InAs light-emitting diodes at 3.3 μm

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Low-cost, low-loss microlens arrays fabricated by soft-lithography replication process

Madanagopal V. Kunnavakkam; F. M. Houlihan; M. Schlax; J. A. Liddle; P. Kolodner; O. Nalamasu; J. A. Rogers

Appl. Phys. Lett. 82, 1152–1154 (2003) https://doi.org/10.1063/1.1555694

Abstract

View articletitled, Low-cost, low-loss microlens arrays fabricated by soft-lithography replication process

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Direct observation of nonlinear effects in a one-dimensional photonic crystal

Hideyuki Inouye; Yoshihiko Kanemitsu

Appl. Phys. Lett. 82, 1155–1157 (2003) https://doi.org/10.1063/1.1556171

Abstract

View articletitled, Direct observation of nonlinear effects in a one-dimensional photonic crystal

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Simulations of nanometric optical circuits based on surface plasmon polariton gap waveguide

Kazuo Tanaka; Masahiro Tanaka

Appl. Phys. Lett. 82, 1158–1160 (2003) https://doi.org/10.1063/1.1557323

Abstract

View articletitled, Simulations of nanometric optical circuits based on surface plasmon polariton gap waveguide

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Integrated optic broadband duplexer made by ion exchange

E. Ghibaudo; J.-E. Broquin; P. Benech

Appl. Phys. Lett. 82, 1161–1163 (2003) https://doi.org/10.1063/1.1556961

Abstract

View articletitled, Integrated optic broadband duplexer made by ion exchange

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Anomalous power and spectrum dependence of terahertz radiation from femtosecond-laser-irradiated indium arsenide in high magnetic fields up to 14 T

Hideyuki Ohtake; Hidetoshi Murakami; Takayuki Yano; Shingo Ono; Nobuhiko Sarukura; Hiroshi Takahashi; Yuji Suzuki; Gen Nishijima; Kazuo Watanabe

Appl. Phys. Lett. 82, 1164–1166 (2003) https://doi.org/10.1063/1.1556963

Abstract

View articletitled, Anomalous power and spectrum dependence of terahertz radiation from femtosecond-laser-irradiated indium arsenide in high magnetic fields up to 14 T

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Quasi-phase-matched difference frequency generation (8–13 μm) in an isotropic semiconductor using total reflection

R. Haı̈dar; Ph. Kupecek; E. Rosencher; R. Triboulet; Ph. Lemasson

Appl. Phys. Lett. 82, 1167–1169 (2003) https://doi.org/10.1063/1.1557326

Abstract

View articletitled, Quasi-phase-matched difference frequency generation (8–13 μm) in an isotropic semiconductor using total reflection

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

In situ measurements of GaN nucleation layer decompostion

D. D. Koleske; M. E. Coltrin; A. A. Allerman; K. C. Cross; C. C. Mitchell; J. J. Figiel

Appl. Phys. Lett. 82, 1170–1172 (2003) https://doi.org/10.1063/1.1555264

Abstract

View articletitled, In situ measurements of GaN nucleation layer decompostion

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Implantation site of rare earths in single-crystalline ZnO

U. Wahl; E. Rita; J. G. Correia; E. Alves; J. P. Araújo; The ISOLDE Collaboration

Appl. Phys. Lett. 82, 1173–1175 (2003) https://doi.org/10.1063/1.1555283

Abstract

View articletitled, Implantation site of rare earths in single-crystalline ZnO

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Raman-spectroscopic determination of inhomogeneous stress in submicron silicon devices

B. Dietrich; V. Bukalo; A. Fischer; K. F. Dombrowski; E. Bugiel; B. Kuck; H. H. Richter

Appl. Phys. Lett. 82, 1176–1178 (2003) https://doi.org/10.1063/1.1555692

Abstract

View articletitled, Raman-spectroscopic determination of inhomogeneous stress in submicron silicon devices

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Direct measurements of grain boundary sliding in yttrium-doped alumina bicrystals

K. Matsunaga; H. Nishimura; H. Muto; T. Yamamoto; Y. Ikuhara

Appl. Phys. Lett. 82, 1179–1181 (2003) https://doi.org/10.1063/1.1555690

Abstract

View articletitled, Direct measurements of grain boundary sliding in yttrium-doped alumina bicrystals

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Origin of the efficient light emission from inversion domain boundaries in GaN

Vincenzo Fiorentini

Appl. Phys. Lett. 82, 1182–1184 (2003) https://doi.org/10.1063/1.1554776

Abstract

View articletitled, Origin of the efficient light emission from inversion domain boundaries in GaN

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${CoSi}_{2}$ surface phase separation into self-assembled lateral multilayers

I. Goldfarb

Appl. Phys. Lett. 82, 1185–1187 (2003) https://doi.org/10.1063/1.1556169

Abstract

View articletitled, <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CoSi</mi><mrow><mn>2</mn></mrow></msub></math> surface phase separation into self-assembled lateral multilayers

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Blueshifted Kerr effects and enhanced reflectivity in nanocrystalline ${CoFe}_{2−x} {Al}_{x} O_{4}$ thin films

Biao Zhou; Ya-Wen Zhang; Chun-Sheng Liao; Yue-Jun Yu; Chun-Hua Yan; Liang-Yao Chen; Song-You Wang

Appl. Phys. Lett. 82, 1188–1190 (2003) https://doi.org/10.1063/1.1556172

Abstract

View articletitled, Blueshifted Kerr effects and enhanced reflectivity in nanocrystalline <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CoFe</mi><mrow><mtext>2−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>4</mn></mrow></msub></math> thin films

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Annealing of InGaAlAs digital alloy studied with scanning-tunneling microscopy and filled-states topography

P. Offermans; P. M. Koenraad; J. H. Wolter; J. D. Song; Jong Min Kim; Seong Ju Bae; Yong Tak Lee

Appl. Phys. Lett. 82, 1191–1193 (2003) https://doi.org/10.1063/1.1555265

Abstract

View articletitled, Annealing of InGaAlAs digital alloy studied with scanning-tunneling microscopy and filled-states topography

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Physical and electronic structure of p-sexiphenyl on Au(111)

C. B. France; B. A. Parkinson

Appl. Phys. Lett. 82, 1194–1196 (2003) https://doi.org/10.1063/1.1554766

Abstract

View articletitled, Physical and electronic structure of p-sexiphenyl on Au(111)

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Formation of ${LaAlO}_{3}$ films on Si(100) substrates using molecular beam deposition

Byung-Eun Park; Hiroshi Ishiwara

Appl. Phys. Lett. 82, 1197–1199 (2003) https://doi.org/10.1063/1.1556966

Abstract

View articletitled, Formation of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">LaAlO</mi><mrow><mn>3</mn></mrow></msub></math> films on Si(100) substrates using molecular beam deposition

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Effects of Zn addition and thermal annealing on yield phenomena of CdTe and ${Cd}_{0.96} {Zn}_{0.04} Te$ single crystals by nanoindentation

M. Pang; D. F. Bahr; K. G. Lynn

Appl. Phys. Lett. 82, 1200–1202 (2003) https://doi.org/10.1063/1.1556573

Abstract

View articletitled, Effects of Zn addition and thermal annealing on yield phenomena of CdTe and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Cd</mi><mrow><mtext>0.96</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Zn</mi><mrow><mtext>0.04</mtext></mrow></msub><mi mathvariant="normal" xmlns="">Te</mi></math> single crystals by nanoindentation

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Electroreflectance of hexagonal gallium nitride at the fundamental and $E_{1}$ spectral regions

M. F. Al-Kuhaili; R. Glosser; A. E. Wickenden; D. D. Koleske; R. L. Henry

Appl. Phys. Lett. 82, 1203–1205 (2003) https://doi.org/10.1063/1.1556964

Abstract

View articletitled, Electroreflectance of hexagonal gallium nitride at the fundamental and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi>E</mi><mrow><mn>1</mn></mrow></msub></math> spectral regions

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Effect of additional nonmagnetic acceptor doping on the resistivity peak and the Curie temperature of ${Ga}_{1−x} {Mn}_{x} As$ epitaxial layers

Sh. U. Yuldashev; Hyunsik Im; V. Sh. Yalishev; C. S. Park; T. W. Kang; Sanghoon Lee; Y. Sasaki; X. Liu; J. K. Furdyna

Appl. Phys. Lett. 82, 1206–1208 (2003) https://doi.org/10.1063/1.1554482

Abstract

View articletitled, Effect of additional nonmagnetic acceptor doping on the resistivity peak and the Curie temperature of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Mn</mi><mrow><mi>x</mi></mrow></msub><mi mathvariant="normal" xmlns="">As</mi></math> epitaxial layers

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Tuning the onset voltage of resonant tunneling through InAs quantum dots by growth parameters

I. Hapke-Wurst; U. Zeitler; U. F. Keyser; R. J. Haug; K. Pierz; Z. Ma

Appl. Phys. Lett. 82, 1209–1211 (2003) https://doi.org/10.1063/1.1555712

Abstract

View articletitled, Tuning the onset voltage of resonant tunneling through InAs quantum dots by growth parameters

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Structural and electrical properties of silicon dioxide layers with embedded germanium nanocrystals grown by molecular beam epitaxy

A. Kanjilal; J. Lundsgaard Hansen; P. Gaiduk; A. Nylandsted Larsen; N. Cherkashin; A. Claverie; P. Normand; E. Kapelanakis; D. Skarlatos; D. Tsoukalas

Appl. Phys. Lett. 82, 1212–1214 (2003) https://doi.org/10.1063/1.1555709

Abstract

View articletitled, Structural and electrical properties of silicon dioxide layers with embedded germanium nanocrystals grown by molecular beam epitaxy

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Large conductance switching and memory effects in organic molecules for data-storage applications

Anirban Bandyopadhyay; Amlan J. Pal

Appl. Phys. Lett. 82, 1215–1217 (2003) https://doi.org/10.1063/1.1555263

Abstract

View articletitled, Large conductance switching and memory effects in organic molecules for data-storage applications

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Why are arsenic clusters situated at dislocations in gallium arsenide?

H. Lei; H. S. Leipner; N. Engler

Appl. Phys. Lett. 82, 1218–1220 (2003) https://doi.org/10.1063/1.1555266

Abstract

View articletitled, Why are arsenic clusters situated at dislocations in gallium arsenide?

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Electron pump by a combined single-electron/field-effect- transistor structure

Yukinori Ono; Yasuo Takahashi

Appl. Phys. Lett. 82, 1221–1223 (2003) https://doi.org/10.1063/1.1556558

Abstract

View articletitled, Electron pump by a combined single-electron/field-effect- transistor structure

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Negative temperature dependence of electron multiplication in ${In}_{0.53} {Ga}_{0.47} As$

M. Yee; W. K. Ng; J. P. R. David; P. A. Houston; C. N. Harrison

Appl. Phys. Lett. 82, 1224–1226 (2003) https://doi.org/10.1063/1.1555284

Abstract

View articletitled, Negative temperature dependence of electron multiplication in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">In</mi><mrow><mtext>0.53</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>0.47</mtext></mrow></msub><mi mathvariant="normal" xmlns="">As</mi></math>

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Real-time characterization of free-carrier absorption during epitaxial Si p-layer growth

Hiroyuki Fujiwara; Michio Kondo; Akihisa Matsuda

Appl. Phys. Lett. 82, 1227–1229 (2003) https://doi.org/10.1063/1.1557315

Abstract

View articletitled, Real-time characterization of free-carrier absorption during epitaxial Si p-layer growth

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Magnetotransport measurements through stacked InAs self-assembled quantum dots

M. H. Son; J. H. Oh; D. Y. Jeong; D. Ahn; M. S. Jun; S. W. Hwang; J. E. Oh; L. W. Engel

Appl. Phys. Lett. 82, 1230–1232 (2003) https://doi.org/10.1063/1.1557774

Abstract

View articletitled, Magnetotransport measurements through stacked InAs self-assembled quantum dots

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Observation of inductively coupled-plasma-induced damage on n-type GaN using deep-level transient spectroscopy

Kyoung Jin Choi; Ho Wan Jang; Jong-Lam Lee

Appl. Phys. Lett. 82, 1233–1235 (2003) https://doi.org/10.1063/1.1557316

Abstract

View articletitled, Observation of inductively coupled-plasma-induced damage on n-type GaN using deep-level transient spectroscopy

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Nitrogen-induced decrease of the electron effective mass in ${GaAs}_{1−x} N_{x}$ thin films measured by thermomagnetic transport phenomena

D. L. Young; J. F. Geisz; T. J. Coutts

Appl. Phys. Lett. 82, 1236–1238 (2003) https://doi.org/10.1063/1.1554777

Abstract

View articletitled, Nitrogen-induced decrease of the electron effective mass in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">GaAs</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">N</mi><mrow><mi>x</mi></mrow></msub></math> thin films measured by thermomagnetic transport phenomena

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MAGNETISM AND SUPERCONDUCTIVITY

Magnetic domain wall trapping by in-plane surface roughness modulation

J. Swerts; K. Temst; M. J. Van Bael; C. Van Haesendonck; Y. Bruynseraede

Appl. Phys. Lett. 82, 1239–1241 (2003) https://doi.org/10.1063/1.1554771

Abstract

View articletitled, Magnetic domain wall trapping by in-plane surface roughness modulation

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Metallic percolation in ${La}_{0.67} {Ca}_{0.33} {MnO}_{3}$ thin films

S. F. Chen; P. I. Lin; J. Y. Juang; T. M. Uen; K. H. Wu; Y. S. Gou; J. Y. Lin

Appl. Phys. Lett. 82, 1242–1244 (2003) https://doi.org/10.1063/1.1554768

Abstract

View articletitled, Metallic percolation in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">La</mi><mrow><mtext>0.67</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ca</mi><mrow><mtext>0.33</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">MnO</mi><mrow><mn>3</mn></mrow></msub></math> thin films

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One-shot-laser-pulse-induced demagnetization in rubidium manganese hexacyanoferrate

Hiroko Tokoro; Shin-ichi Ohkoshi; Kazuhito Hashimoto

Appl. Phys. Lett. 82, 1245–1247 (2003) https://doi.org/10.1063/1.1556170

Abstract

View articletitled, One-shot-laser-pulse-induced demagnetization in rubidium manganese hexacyanoferrate

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Longitudinal-shock-wave compression of ${Nd}_{2} {Fe}_{14} B$ high-energy hard ferromagnet: The pressure-induced magnetic phase transition

Sergey I. Shkuratov; Evgueni F. Talantsev; James C. Dickens; Magne Kristiansen; Jason Baird

Appl. Phys. Lett. 82, 1248–1250 (2003) https://doi.org/10.1063/1.1554486

Abstract

View articletitled, Longitudinal-shock-wave compression of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Nd</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Fe</mi><mrow><mn>14</mn></mrow></msub><mi mathvariant="normal" xmlns="">B</mi></math> high-energy hard ferromagnet: The pressure-induced magnetic phase transition

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Ferromagnetic ${Ga}_{1−x} {Mn}_{x} As$ produced by ion implantation and pulsed-laser melting

M. A. Scarpulla; O. D. Dubon; K. M. Yu; O. Monteiro; M. R. Pillai; M. J. Aziz; M. C. Ridgway

Appl. Phys. Lett. 82, 1251–1253 (2003) https://doi.org/10.1063/1.1555260

Abstract

View articletitled, Ferromagnetic <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Mn</mi><mrow><mi>x</mi></mrow></msub><mi mathvariant="normal" xmlns="">As</mi></math> produced by ion implantation and pulsed-laser melting

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Dopants for independent control of precessional frequency and damping in ${Ni}_{81} {Fe}_{19}$ (50 nm) thin films

S. G. Reidy; L. Cheng; W. E. Bailey

Appl. Phys. Lett. 82, 1254–1256 (2003) https://doi.org/10.1063/1.1544642

Abstract

View articletitled, Dopants for independent control of precessional frequency and damping in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ni</mi><mrow><mn>81</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Fe</mi><mrow><mn>19</mn></mrow></msub></math> (50 nm) thin films

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Clusters and magnetism in epitaxial Co-doped ${TiO}_{2}$ anatase

S. A. Chambers; T. Droubay; C. M. Wang; A. S. Lea; R. F. C. Farrow; L. Folks; V. Deline; S. Anders

Appl. Phys. Lett. 82, 1257–1259 (2003) https://doi.org/10.1063/1.1556173

Abstract

View articletitled, Clusters and magnetism in epitaxial Co-doped <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">TiO</mi><mrow><mn>2</mn></mrow></msub></math> anatase

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Quantitative studies of spin-momentum-transfer-induced excitations in Co/Cu multilayer films using point-contact spectroscopy

W. H. Rippard; M. R. Pufall; T. J. Silva

Appl. Phys. Lett. 82, 1260–1262 (2003) https://doi.org/10.1063/1.1556168

Abstract

View articletitled, Quantitative studies of spin-momentum-transfer-induced excitations in Co/Cu multilayer films using point-contact spectroscopy

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DIELECTRICS AND FERROELECTRICITY

Controlling crystallization of $Pb (Zr,Ti) O_{3}$ thin films on ${IrO}_{2}$ electrodes at low temperature through interface engineering

K. Maki; B. T. Liu; H. Vu; V. Nagarajan; R. Ramesh; Y. Fujimori; T. Nakamura; H. Takasu

Appl. Phys. Lett. 82, 1263–1265 (2003) https://doi.org/10.1063/1.1544057

Abstract

View articletitled, Controlling crystallization of <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">Pb</mi><mi xmlns="">(</mi><mi mathvariant="normal" xmlns="">Zr,Ti</mi><mi xmlns="">)</mi><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>3</mn></mrow></msub></math> thin films on <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">IrO</mi><mrow><mn>2</mn></mrow></msub></math> electrodes at low temperature through interface engineering

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Physicochemical properties of ${HfO}_{2}$ in response to rapid thermal anneal

Patrick S. Lysaght; Brendan Foran; Gennadi Bersuker; Peijun J. Chen; Robert W. Murto; Howard R. Huff

Appl. Phys. Lett. 82, 1266–1268 (2003) https://doi.org/10.1063/1.1553998

Abstract

View articletitled, Physicochemical properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">HfO</mi><mrow><mn>2</mn></mrow></msub></math> in response to rapid thermal anneal

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Thermodynamic analysis of temperature-graded ferroelectrics

S. P. Alpay; Z.-G. Ban; J. V. Mantese

Appl. Phys. Lett. 82, 1269–1271 (2003) https://doi.org/10.1063/1.1556565

Abstract

View articletitled, Thermodynamic analysis of temperature-graded ferroelectrics

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NANOSCALE SCIENCE AND DESIGN

Kinetics-limited surface structures at the nanoscale

Hanchen Huang; C. H. Woo; H. L. Wei; X. X. Zhang

Appl. Phys. Lett. 82, 1272–1274 (2003) https://doi.org/10.1063/1.1555278

Abstract

View articletitled, Kinetics-limited surface structures at the nanoscale

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Cables of BN-insulated B–C–N nanotubes

D. Golberg; P. S. Dorozhkin; Y. Bando; Z.-C. Dong; N. Grobert; M. Reyes-Reyes; H. Terrones; M. Terrones

Appl. Phys. Lett. 82, 1275–1277 (2003) https://doi.org/10.1063/1.1555713

Abstract

View articletitled, Cables of BN-insulated B–C–N nanotubes

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Theory of spin relaxation in magnetic resonance force microscopy

D. Mozyrsky; I. Martin; D. Pelekhov; P. C. Hammel

Appl. Phys. Lett. 82, 1278–1280 (2003) https://doi.org/10.1063/1.1554769

Abstract

View articletitled, Theory of spin relaxation in magnetic resonance force microscopy

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High-speed focused-ion-beam patterning for guiding the growth of anodic alumina nanochannel arrays

N. W. Liu; A. Datta; C. Y. Liu; Y. L. Wang

Appl. Phys. Lett. 82, 1281–1283 (2003) https://doi.org/10.1063/1.1555689

Abstract

View articletitled, High-speed focused-ion-beam patterning for guiding the growth of anodic alumina nanochannel arrays

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Three-dimensional face-centered-cubic photonic crystal templates by laser holography: fabrication, optical characterization, and band-structure calculations

Yu. V. Miklyaev; D. C. Meisel; A. Blanco; G. von Freymann; K. Busch; W. Koch; C. Enkrich; M. Deubel; M. Wegener

Appl. Phys. Lett. 82, 1284–1286 (2003) https://doi.org/10.1063/1.1557328

Abstract

View articletitled, Three-dimensional face-centered-cubic photonic crystal templates by laser holography: fabrication, optical characterization, and band-structure calculations

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A carbon-nanotube-based nanorelay

J. M. Kinaret; T. Nord; S. Viefers

Appl. Phys. Lett. 82, 1287–1289 (2003) https://doi.org/10.1063/1.1557324

Abstract

View articletitled, A carbon-nanotube-based nanorelay

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Polyaniline nanotube composites: A high-resolution printable conductor

Graciela B. Blanchet; C. R. Fincher; F. Gao

Appl. Phys. Lett. 82, 1290–1292 (2003) https://doi.org/10.1063/1.1553991

Abstract

View articletitled, Polyaniline nanotube composites: A high-resolution printable conductor

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DEVICE PHYSICS

Reverse-bias leakage current reduction in GaN Schottky diodes by electrochemical surface treatment

E. J. Miller; D. M. Schaadt; E. T. Yu; P. Waltereit; C. Poblenz; J. S. Speck

Appl. Phys. Lett. 82, 1293–1295 (2003) https://doi.org/10.1063/1.1554484

Abstract

View articletitled, Reverse-bias leakage current reduction in GaN Schottky diodes by electrochemical surface treatment

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A dinuclear aluminum 8-hydroxyquinoline complex with high electron mobility for organic light-emitting diodes

Dongge Ma; Guang Wang; Yufeng Hu; Yanguang Zhang; Lixiang Wang; Xiabin Jing; Fosong Wang; C. S. Lee; S. T. Lee

Appl. Phys. Lett. 82, 1296–1298 (2003) https://doi.org/10.1063/1.1557332

Abstract

View articletitled, A dinuclear aluminum 8-hydroxyquinoline complex with high electron mobility for organic light-emitting diodes

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AlGaN/GaN heterostructure field-effect transistors on single-crystal bulk AlN

X. Hu; J. Deng; N. Pala; R. Gaska; M. S. Shur; C. Q. Chen; J. Yang; G. Simin; M. A. Khan; J. C. Rojo; L. J. Schowalter

Appl. Phys. Lett. 82, 1299–1301 (2003) https://doi.org/10.1063/1.1555282

Abstract

View articletitled, AlGaN/GaN heterostructure field-effect transistors on single-crystal bulk AlN

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Diffusion-limited transport in the off-state of amorphous Si thin-film transistors

J. U. Lee; G. E. Possin

Appl. Phys. Lett. 82, 1302–1304 (2003) https://doi.org/10.1063/1.1555706

Abstract

View articletitled, Diffusion-limited transport in the off-state of amorphous Si thin-film transistors

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APPLIED BIOPHYSICS

Design and test of noncrosshybridizing oligonucleotide building blocks for DNA computers and nanostructures

Russell Deaton; Jin-Woo Kim; Junghuei Chen

Appl. Phys. Lett. 82, 1305–1307 (2003) https://doi.org/10.1063/1.1556557

Abstract

View articletitled, Design and test of noncrosshybridizing oligonucleotide building blocks for DNA computers and nanostructures

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Nanopore sequencing of polynucleotides assisted by a rotating electric field

C.-M. Chen; E.-H. Peng

Appl. Phys. Lett. 82, 1308–1310 (2003) https://doi.org/10.1063/1.1554480

Abstract

View articletitled, Nanopore sequencing of polynucleotides assisted by a rotating electric field

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COMMENTS

Comment on “Schottky barrier rectifier with high current density using vanadium as barrier metal” [Appl. Phys. Lett., 79, 860 (2001)]

Yu-Long Jiang; Guo-Ping Ru; Xin-Ping Qu; Bing-Zong Li

Appl. Phys. Lett. 82, 1311–1312 (2003) https://doi.org/10.1063/1.1555268

View articletitled, Comment on “Schottky barrier rectifier with high current density using vanadium as barrier metal” [Appl. Phys. Lett., 79, 860 (2001)]

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RETRACTIONS

Retraction: “Nanoscale organic transistors based on self-assembled monolayers” [Appl. Phys. Lett. 80, 847 (2002)]

J. H. Schön; Z. Bao

Appl. Phys. Lett. 82, 1313 (2003) https://doi.org/10.1063/1.1553995

View articletitled, Retraction: “Nanoscale organic transistors based on self-assembled monolayers” [Appl. Phys. Lett. 80, 847 (2002)]

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Retraction: “Fast organic electronic circuits based on ambipolar pentacene field-effect transistors” [Appl. Phys. Lett. 79, 4043 (2001)]

Jan Hendrik Schön; Christian Kloc

Appl. Phys. Lett. 82, 1313 (2003) https://doi.org/10.1063/1.1556138

View articletitled, Retraction: “Fast organic electronic circuits based on ambipolar pentacene field-effect transistors” [Appl. Phys. Lett. 79, 4043 (2001)]

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Retraction: “Plastic Josephson junctions” [Appl. Phys. Lett. 79, 2208 (2001)]

Jan Hendrik Schön

Appl. Phys. Lett. 82, 1313 (2003) https://doi.org/10.1063/1.1556139

View articletitled, Retraction: “Plastic Josephson junctions” [Appl. Phys. Lett. 79, 2208 (2001)]

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Retraction: “Perylene: A promising organic field-effect transistor material” [Appl. Phys. Lett. 77, 3776 (2000)]

J. H. Schön; Ch. Kloc; B. Batlogg

Appl. Phys. Lett. 82, 1313–1314 (2003) https://doi.org/10.1063/1.1556140

View articletitled, Retraction: “Perylene: A promising organic field-effect transistor material” [Appl. Phys. Lett. 77, 3776 (2000)]

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Issues

LASERS, OPTICS, AND OPTOELECTRONICS

STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

ELECTRONIC TRANSPORT AND SEMICONDUCTORS

MAGNETISM AND SUPERCONDUCTIVITY

DIELECTRICS AND FERROELECTRICITY

NANOSCALE SCIENCE AND DESIGN

DEVICE PHYSICS

APPLIED BIOPHYSICS

COMMENTS

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