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Issues
30 June 2003
ISSN 0003-6951
EISSN 1077-3118
In this Issue
LASERS, OPTICS, AND OPTOELECTRONICS
Probing dielectric relaxation properties of liquid with terahertz time-domain spectroscopy
Appl. Phys. Lett. 82, 4633–4635 (2003)
https://doi.org/10.1063/1.1586995
Dynamics of stimulated emission in silicon nanocrystals
Appl. Phys. Lett. 82, 4636–4638 (2003)
https://doi.org/10.1063/1.1586779
Thermoelastic stress in GaAs/AlGaAs quantum cascade lasers
Appl. Phys. Lett. 82, 4639–4641 (2003)
https://doi.org/10.1063/1.1586998
Low-loss, high-bandwidth graded-index plastic optical fiber fabricated by the centrifugal deposition method
Appl. Phys. Lett. 82, 4645–4647 (2003)
https://doi.org/10.1063/1.1584516
Resonance transmission modes in dual-periodical dielectric multilayer films
Appl. Phys. Lett. 82, 4654–4656 (2003)
https://doi.org/10.1063/1.1587880
High-efficiency optical transfer of torque to a nematic liquid crystal droplet
Appl. Phys. Lett. 82, 4657–4659 (2003)
https://doi.org/10.1063/1.1588366
Cross-gain modulation in inhomogeneously broadened gain spectra of InP-Based 1550 nm quantum dash optical amplifiers: Small-signal bandwidth dependence on wavelength detuning
R. Alizon; A. Bilenca; H. Dery; V. Mikhelashvili; G. Eisenstein; R. Schwertberger; D. Gold; J. P. Reithmaier; A. Forchel
Appl. Phys. Lett. 82, 4660–4662 (2003)
https://doi.org/10.1063/1.1588372
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
Cubic GaN formation in Mn/GaN multilayer films grown on 6H-SiC(0001)
Appl. Phys. Lett. 82, 4666–4668 (2003)
https://doi.org/10.1063/1.1586455
Field-induced cation migration in Cu oxide films by in situ scanning tunneling microscopy
Appl. Phys. Lett. 82, 4672–4674 (2003)
https://doi.org/10.1063/1.1586461
Isotope and crystal orientation effects in low-energy H/D blistering of Si
Appl. Phys. Lett. 82, 4675–4677 (2003)
https://doi.org/10.1063/1.1580637
Influence of growth conditions on the lattice constant and composition of (Ga,Mn)As
Appl. Phys. Lett. 82, 4678–4680 (2003)
https://doi.org/10.1063/1.1586778
Real-time in situ x-ray diffraction as a method to control epitaxial growth
Appl. Phys. Lett. 82, 4684–4686 (2003)
https://doi.org/10.1063/1.1582360
Improved field emission at electric-discharge-conditioned sites on diamond surfaces due to the formation of carbon nanotubes
Appl. Phys. Lett. 82, 4687–4689 (2003)
https://doi.org/10.1063/1.1581372
High-strength Zr-Nb-(Cu,Ni,Al) composites with enhanced plasticity
Appl. Phys. Lett. 82, 4690–4692 (2003)
https://doi.org/10.1063/1.1587254
Space-charge-mediated delayed electroluminescence from polyfluorene thin films
Appl. Phys. Lett. 82, 4693–4695 (2003)
https://doi.org/10.1063/1.1587879
Acoustic properties of relaxor ferroelectric ceramics studied by Brillouin scattering
Appl. Phys. Lett. 82, 4696–4698 (2003)
https://doi.org/10.1063/1.1588754
A highly glass-forming alloy with low glass transition temperature
Appl. Phys. Lett. 82, 4699–4701 (2003)
https://doi.org/10.1063/1.1588367
Anomalous compositional pulling effect in InGaN/GaN multiple quantum wells
Appl. Phys. Lett. 82, 4702–4704 (2003)
https://doi.org/10.1063/1.1588731
Wetting effect and morphological stability in growth of short-period strained multilayers
Appl. Phys. Lett. 82, 4705–4707 (2003)
https://doi.org/10.1063/1.1588739
Structural and electrical characteristics of Ge nanoclusters embedded in gate dielectric
Appl. Phys. Lett. 82, 4708–4710 (2003)
https://doi.org/10.1063/1.1588373
Bismuth volatility effects on the perfection of and films
Appl. Phys. Lett. 82, 4711–4713 (2003)
https://doi.org/10.1063/1.1574406
Two-photon absorption and multiphoton-induced photoluminescence of bulk GaN excited below the middle of the band gap
Appl. Phys. Lett. 82, 4714–4716 (2003)
https://doi.org/10.1063/1.1587260
Optical power limiting and stabilization using a two-photon absorbing neat liquid crystal in isotropic phase
Appl. Phys. Lett. 82, 4717–4719 (2003)
https://doi.org/10.1063/1.1588364
ELECTRONIC TRANSPORT AND SEMICONDUCTORS
Temperature dependence of the energy gap and free carrier absorption in bulk single crystals
Appl. Phys. Lett. 82, 4720–4722 (2003)
https://doi.org/10.1063/1.1587002
Experimental determination of electron and hole mean drift distance: Application to chemical vapor deposition diamond
Appl. Phys. Lett. 82, 4723–4725 (2003)
https://doi.org/10.1063/1.1586475
Schottky contact on n-type 4H-SiC
Appl. Phys. Lett. 82, 4726–4728 (2003)
https://doi.org/10.1063/1.1588365
MAGNETISM AND SUPERCONDUCTIVITY
Self-assembly and magnetic properties of cobalt nanoparticles
Appl. Phys. Lett. 82, 4729–4731 (2003)
https://doi.org/10.1063/1.1586481
Current-induced effect on the resistivity of epitaxial thin films of and
Appl. Phys. Lett. 82, 4732–4734 (2003)
https://doi.org/10.1063/1.1587001
Electron transport properties in magnetic tunnel junctions with epitaxial NiFe (111) ferromagnetic bottom electrodes
Appl. Phys. Lett. 82, 4735–4737 (2003)
https://doi.org/10.1063/1.1587271
Investigation of superparamagnetism in Co–Zn ferrite thin films produced by pulsed-laser deposition
Appl. Phys. Lett. 82, 4738–4739 (2003)
https://doi.org/10.1063/1.1581980
Theory of semiconductor magnetic bipolar transistors
Appl. Phys. Lett. 82, 4740–4742 (2003)
https://doi.org/10.1063/1.1586996
Decoupling between rare-earth moment and transition metal moment in compounds
Appl. Phys. Lett. 82, 4743–4745 (2003)
https://doi.org/10.1063/1.1587884
Magnetization steps in a noncharge-ordered manganite,
Appl. Phys. Lett. 82, 4746–4748 (2003)
https://doi.org/10.1063/1.1588756
Observation of sphere resonance peak in ferromagnetic GaN:Mn
S. S. A. Seo; M. W. Kim; Y. S. Lee; T. W. Noh; Y. D. Park; G. T. Thaler; M. E. Overberg; C. R. Abernathy; S. J. Pearton
Appl. Phys. Lett. 82, 4749–4751 (2003)
https://doi.org/10.1063/1.1588741
Josephson effect in ramp-edge junctions
Appl. Phys. Lett. 82, 4752–4754 (2003)
https://doi.org/10.1063/1.1589183
Enhanced carrier-mediated ferromagnetism in GaMnN by codoping of Mg
Appl. Phys. Lett. 82, 4755–4757 (2003)
https://doi.org/10.1063/1.1586484
DIELECTRICS AND FERROELECTRICITY
Nucleation and interface formation mechanisms in atomic layer deposition of gate oxides
Appl. Phys. Lett. 82, 4758–4760 (2003)
https://doi.org/10.1063/1.1585129
Large remanent polarization of 100% polar-axis-oriented epitaxial tetragonal thin films
Appl. Phys. Lett. 82, 4761–4763 (2003)
https://doi.org/10.1063/1.1586993
Dielectric and transverse piezoelectric properties of sol-gel-derived (001) epitaxial thin films
Appl. Phys. Lett. 82, 4767–4769 (2003)
https://doi.org/10.1063/1.1581366
Ferroelectric field-effect transistor with a channel
Appl. Phys. Lett. 82, 4770–4772 (2003)
https://doi.org/10.1063/1.1588753
B-site disordering in by mechanical activation
Appl. Phys. Lett. 82, 4773–4775 (2003)
https://doi.org/10.1063/1.1581384
NANOSCALE SCIENCE AND DESIGN
Light amplification in semiconductor nanocrystals: Quantum rods versus quantum dots
Appl. Phys. Lett. 82, 4776–4778 (2003)
https://doi.org/10.1063/1.1586460
Two-dimensional periodic positioning of self-assembled Ge islands on prepatterned Si (001) substrates
Appl. Phys. Lett. 82, 4779–4781 (2003)
https://doi.org/10.1063/1.1581986
Spatially direct and indirect transitions observed for Si/Ge quantum dots
Appl. Phys. Lett. 82, 4785–4787 (2003)
https://doi.org/10.1063/1.1587259
Influence of coupling effect in the operation of vertically coupled quantum-dot lasers
Appl. Phys. Lett. 82, 4788–4790 (2003)
https://doi.org/10.1063/1.1587881
Synthesis and optical properties of S-doped ZnO nanowires
Appl. Phys. Lett. 82, 4791–4793 (2003)
https://doi.org/10.1063/1.1588735
Self-assembled growth of single-walled carbon nanotubes by pyrolysis of metalorganic precursor
Appl. Phys. Lett. 82, 4794–4796 (2003)
https://doi.org/10.1063/1.1587257
Local synthesis of silicon nanowires and carbon nanotubes on microbridges
Appl. Phys. Lett. 82, 4797–4799 (2003)
https://doi.org/10.1063/1.1587262
Comparative current–voltage characteristics of nicked and repaired λ-DNA
Appl. Phys. Lett. 82, 4800–4802 (2003)
https://doi.org/10.1063/1.1588738
InAs/InP quantum dots in -based microcavities
Appl. Phys. Lett. 82, 4803–4805 (2003)
https://doi.org/10.1063/1.1588369
Direct and subdiffraction-limit laser nanofabrication in silicon
Appl. Phys. Lett. 82, 4809–4811 (2003)
https://doi.org/10.1063/1.1589167
The role of free carriers and excitons on the lasing characteristics of InAs/InGaAs quantum-dot lasers
Appl. Phys. Lett. 82, 4812–4814 (2003)
https://doi.org/10.1063/1.1588377
DEVICE PHYSICS
Effect of electrical doping on molecular level alignment at organic–organic heterojunctions
Appl. Phys. Lett. 82, 4815–4817 (2003)
https://doi.org/10.1063/1.1585123
The effect of additional oxidation on the memory characteristics of metal-oxide-semiconductor capacitors with Si nanocrystals
Appl. Phys. Lett. 82, 4818–4820 (2003)
https://doi.org/10.1063/1.1587273
Theory of control in atomic force microscopy
Appl. Phys. Lett. 82, 4821–4823 (2003)
https://doi.org/10.1063/1.1584790
Improved AlGaN/GaN high electron mobility transistor using AlN interlayers
Appl. Phys. Lett. 82, 4827–4829 (2003)
https://doi.org/10.1063/1.1588379
Enhanced electroluminescence in silicon-on-insulator metal–oxide–semiconductor transistors with thin silicon layer
Appl. Phys. Lett. 82, 4830–4832 (2003)
https://doi.org/10.1063/1.1587877
APPLIED BIOPHYSICS
INTERDISCIPLINARY AND GENERAL PHYSICS
Normalized method for comparing tensile behaviors of electrorheological fluids
Appl. Phys. Lett. 82, 4836–4838 (2003)
https://doi.org/10.1063/1.1588740
Limitations on the scale of an electrode array for trapping particles in microfluidics by positive dielectrophoresis
Appl. Phys. Lett. 82, 4839–4841 (2003)
https://doi.org/10.1063/1.1587882
COMMENTS
ERRATA
Erratum: “Bipolaron dynamics in pure and doped and perovskite systems” [Appl. Phys. Lett. 81, 4046 (2002)]
Appl. Phys. Lett. 82, 4843 (2003)
https://doi.org/10.1063/1.1589197
Topological and chiral matter—Physics and applications
Maia G. Vergniory, Takeshi Kondo, et al.
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Feedback cooling of an insulating high-Q diamagnetically levitated plate
S. Tian, K. Jadeja, et al.