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LASERS, OPTICS, AND OPTOELECTRONICS

Very-long wave ternary antimonide superlattice photodiode with 21 μm cutoff

E. H. Aifer; E. M. Jackson; G. Boishin; L. J. Whitman; I. Vurgaftman; J. R. Meyer; J. C. Culbertson; B. R. Bennett

Appl. Phys. Lett. 82, 4411–4413 (2003) https://doi.org/10.1063/1.1584518

Abstract

View articletitled, Very-long wave ternary antimonide superlattice photodiode with 21 μm cutoff

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Effects due to disorder on photonic crystal-based waveguides

Kai-Chong Kwan; Xiangdong Zhang; Zhao-Qing Zhang; C. T. Chan

Appl. Phys. Lett. 82, 4414–4416 (2003) https://doi.org/10.1063/1.1584512

Abstract

View articletitled, Effects due to disorder on photonic crystal-based waveguides

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Thermal property of tunnel-regenerated multiactive-region light-emitting diodes

Xia Guo; Guang-Di Shen; Yuan Ji; Xue-Zhong Wang; Jin-Yu Du; De-Shu Zou; Guo-Hong Wang; Guo Gao; Ludwig J. Balk; Ralph Heiderhoff; Teck Hock Lee; Kang L. Wang

Appl. Phys. Lett. 82, 4417–4419 (2003) https://doi.org/10.1063/1.1583134

Abstract

View articletitled, Thermal property of tunnel-regenerated multiactive-region light-emitting diodes

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Ultrafast nonresonant third-order optical nonlinearity of a conjugated ${3,3}^{'}$ -bipyridine derivative from 1150 to 1600 nm

Qiying Chen; Edward H. Sargent; Nicolas Leclerc; André-Jean Attias

Appl. Phys. Lett. 82, 4420–4422 (2003) https://doi.org/10.1063/1.1584517

Abstract

View articletitled, Ultrafast nonresonant third-order optical nonlinearity of a conjugated <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mtext>3,3</mtext><mrow><mi>′</mi></mrow></msup></math>-bipyridine derivative from 1150 to 1600 nm

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Third-harmonic generation of a continuous-wave Ti:Sapphire laser in external resonant cavities

J. Mes; E. J. van Duijn; R. Zinkstok; S. Witte; W. Hogervorst

Appl. Phys. Lett. 82, 4423–4425 (2003) https://doi.org/10.1063/1.1584515

Abstract

View articletitled, Third-harmonic generation of a continuous-wave Ti:Sapphire laser in external resonant cavities

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Highly reflective distributed Bragg reflectors using a deeply etched semiconductor/air grating for InGaN/GaN laser diodes

Tadashi Saitoh; Masami Kumagai; Hailong Wang; Takehiko Tawara; Toshio Nishida; Testuya Akasaka; Naoki Kobayashi

Appl. Phys. Lett. 82, 4426–4428 (2003) https://doi.org/10.1063/1.1586992

Abstract

View articletitled, Highly reflective distributed Bragg reflectors using a deeply etched semiconductor/air grating for InGaN/GaN laser diodes

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Direct measurements of large near-band edge nonlinear index change from 1.48 to 1.55 μm in InGaAs/InAlGaAs multiquantum wells

Lukasz Brzozowski; Edward H. Sargent; Anthony Spring Thorpe; Marcius Extavour

Appl. Phys. Lett. 82, 4429–4431 (2003) https://doi.org/10.1063/1.1585130

Abstract

View articletitled, Direct measurements of large near-band edge nonlinear index change from 1.48 to 1.55 μm in InGaAs/InAlGaAs multiquantum wells

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Flexible low-voltage electro-optic polymer modulators

Hyun-Chae Song; Min-Cheol Oh; Seh-Won Ahn; William H. Steier; Harold R. Fetterman; Cheng Zhang

Appl. Phys. Lett. 82, 4432–4434 (2003) https://doi.org/10.1063/1.1586474

Abstract

View articletitled, Flexible low-voltage electro-optic polymer modulators

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Designs of terahertz waveguides for efficient parametric terahertz generation

Wei Shi; Yujie J. Ding

Appl. Phys. Lett. 82, 4435–4437 (2003) https://doi.org/10.1063/1.1584513

Abstract

View articletitled, Designs of terahertz waveguides for efficient parametric terahertz generation

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Polarization superprism effect in surface polaritonic crystals

A. V. Zayats; W. Dickson; I. I. Smolyaninov; C. C. Davis

Appl. Phys. Lett. 82, 4438–4440 (2003) https://doi.org/10.1063/1.1585132

Abstract

View articletitled, Polarization superprism effect in surface polaritonic crystals

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Ultraviolet AlGaN multiple-quantum-well laser diodes

Michael Kneissl; David W. Treat; Mark Teepe; Naoko Miyashita; Noble M. Johnson

Appl. Phys. Lett. 82, 4441–4443 (2003) https://doi.org/10.1063/1.1585135

Abstract

View articletitled, Ultraviolet AlGaN multiple-quantum-well laser diodes

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Large pure refractive nonlinearity of nanostructure silica aerogel

J. T. Seo; Q. Yang; S. Creekmore; B. Tabibi; D. Temple; S. Y. Kim; K. Yoo; A. Mott; M. Namkung; S. S. Jung

Appl. Phys. Lett. 82, 4444–4446 (2003) https://doi.org/10.1063/1.1585127

Abstract

View articletitled, Large pure refractive nonlinearity of nanostructure silica aerogel

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PLASMAS AND ELECTRICAL DISCHARGES

Linear, segmented microdischarge array with an active length of ∼1 cm: cw and pulsed operation in the rare gases and evidence of gain on the 460.30 nm transition of ${Xe}^{+}$

P. von Allmen; D. J. Sadler; C. Jensen; N. P. Ostrom; S. T. McCain; B. A. Vojak; J. G. Eden

Appl. Phys. Lett. 82, 4447–4449 (2003) https://doi.org/10.1063/1.1585137

Abstract

View articletitled, Linear, segmented microdischarge array with an active length of ∼1 cm: cw and pulsed operation in the rare gases and evidence of gain on the 460.30 nm transition of <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">Xe</mi><mrow><mi>+</mi></mrow></msup></math>

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Liquid crystal alignment surface with two easy axes induced by unidirectional rubbing

Rumiko Yamaguchi; Yusuke Goto; Susumu Sato

Appl. Phys. Lett. 82, 4450–4452 (2003) https://doi.org/10.1063/1.1585128

Abstract

View articletitled, Liquid crystal alignment surface with two easy axes induced by unidirectional rubbing

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Evolution of the electron localization in a nonconventional alloy system ${GaAs}_{1−x} N_{x}$ probed by high-magnetic-field photoluminescence

Y. J. Wang; X. Wei; Y. Zhang; A. Mascarenhas; H. P. Xin; Y. G. Hong; C. W. Tu

Appl. Phys. Lett. 82, 4453–4455 (2003) https://doi.org/10.1063/1.1584789

Abstract

View articletitled, Evolution of the electron localization in a nonconventional alloy system <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">GaAs</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">N</mi><mrow><mi>x</mi></mrow></msub></math> probed by high-magnetic-field photoluminescence

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Strong ultraviolet emission from ${SiO}_{2} / {LiNbO}_{3} (: {Fe)/SiO}_{2}$ structures

X. Yang; X. L. Wu; W. W. Xue; G. S. Huang; G. G. Siu; Z. G. Dong; L. Fang; M. R. Shen

Appl. Phys. Lett. 82, 4456–4458 (2003) https://doi.org/10.1063/1.1586789

Abstract

View articletitled, Strong ultraviolet emission from <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mn>2</mn></mrow></msub><mi xmlns="">/</mi><msub xmlns=""><mi mathvariant="normal">LiNbO</mi><mrow><mn>3</mn></mrow></msub><mi xmlns="">(:</mi><msub xmlns=""><mi mathvariant="normal">Fe)/SiO</mi><mrow><mn>2</mn></mrow></msub></math> structures

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Nonuniform current distribution in metal/diamond/metal vertical structures

G. Conte; M. C. Rossi; S. Salvatori; F. Tersigni; P. Ascarelli; E. Cappelli

Appl. Phys. Lett. 82, 4459–4461 (2003) https://doi.org/10.1063/1.1583855

Abstract

View articletitled, Nonuniform current distribution in metal/diamond/metal vertical structures

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Subwavelength ripple formation on the surfaces of compound semiconductors irradiated with femtosecond laser pulses

A. Borowiec; H. K. Haugen

Appl. Phys. Lett. 82, 4462–4464 (2003) https://doi.org/10.1063/1.1586457

Abstract

View articletitled, Subwavelength ripple formation on the surfaces of compound semiconductors irradiated with femtosecond laser pulses

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Shortest intersubband transition wavelength (1.68 μm) achieved in AlN/GaN multiple quantum wells by metalorganic vapor phase epitaxy

Ichitaro Waki; Chaiyasit Kumtornkittikul; Yukihiro Shimogaki; Yoshiaki Nakano

Appl. Phys. Lett. 82, 4465–4467 (2003) https://doi.org/10.1063/1.1586473

Abstract

View articletitled, Shortest intersubband transition wavelength (1.68 μm) achieved in AlN/GaN multiple quantum wells by metalorganic vapor phase epitaxy

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Interface energy of ${Au}_{7} Si$ grown in the interfacial layer of truncated hexagonal dipyramidal Au nanoislands on polycrystalline-silicon

J. S. Wu; Y. F. Chen; S. Dhara; C. T. Wu; K. H. Chen; L. C. Chen

Appl. Phys. Lett. 82, 4468–4470 (2003) https://doi.org/10.1063/1.1586997

Abstract

View articletitled, Interface energy of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Au</mi><mrow><mn>7</mn></mrow></msub><mi mathvariant="normal" xmlns="">Si</mi></math> grown in the interfacial layer of truncated hexagonal dipyramidal Au nanoislands on polycrystalline-silicon

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Inversion domains and pinholes in GaN grown over Si(111)

A. M. Sánchez; P. Ruterana; M. Benamara; H. P. Strunk

Appl. Phys. Lett. 82, 4471–4473 (2003) https://doi.org/10.1063/1.1584072

Abstract

View articletitled, Inversion domains and pinholes in GaN grown over Si(111)

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Early manifestation of localization effects in diluted Ga(AsN)

F. Masia; A. Polimeni; G. Baldassarri Höger von Högersthal; M. Bissiri; M. Capizzi; P. J. Klar; W. Stolz

Appl. Phys. Lett. 82, 4474–4476 (2003) https://doi.org/10.1063/1.1586787

Abstract

View articletitled, Early manifestation of localization effects in diluted Ga(AsN)

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Effect of InGaAs capping layer on the properties of InAs/InGaAs quantum dots and lasers

F. Y. Chang; C. C. Wu; H. H. Lin

Appl. Phys. Lett. 82, 4477–4479 (2003) https://doi.org/10.1063/1.1585125

Abstract

View articletitled, Effect of InGaAs capping layer on the properties of InAs/InGaAs quantum dots and lasers

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Formation of patterned buried insulating layer in Si substrates by ${He}^{+}$ implantation and annealing in oxidation atmosphere

Atsushi Ogura

Appl. Phys. Lett. 82, 4480–4482 (2003) https://doi.org/10.1063/1.1586783

Abstract

View articletitled, Formation of patterned buried insulating layer in Si substrates by <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">He</mi><mrow><mi>+</mi></mrow></msup></math> implantation and annealing in oxidation atmosphere

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Interface-reaction-mediated formation of two-dimensional Si islands on ${CaF}_{2}$

Andreas Klust; Michael Grimsehl; Joachim Wollschläger

Appl. Phys. Lett. 82, 4483–4485 (2003) https://doi.org/10.1063/1.1585126

Abstract

View articletitled, Interface-reaction-mediated formation of two-dimensional Si islands on <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CaF</mi><mrow><mn>2</mn></mrow></msub></math>

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Atomic-layer-deposited ${WN}_{x} C_{y}$ thin films as diffusion barrier for copper metallization

Soo-Hyun Kim; Su Suk Oh; Ki-Bum Kim; Dae-Hwan Kang; Wei-Min Li; Suvi Haukka; Marko Tuominen

Appl. Phys. Lett. 82, 4486–4488 (2003) https://doi.org/10.1063/1.1585111

Abstract

View articletitled, Atomic-layer-deposited <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">WN</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">C</mi><mrow><mi>y</mi></mrow></msub></math> thin films as diffusion barrier for copper metallization

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The characteristic carrier–Er interaction distance in Er-doped $a- {Si/SiO}_{2}$ superlattices formed by ion sputtering

Ji-Hong Jhe; Jung H. Shin; Kyung Joong Kim; Dae Won Moon

Appl. Phys. Lett. 82, 4489–4491 (2003) https://doi.org/10.1063/1.1586458

Abstract

View articletitled, The characteristic carrier–Er interaction distance in Er-doped <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">a-</mi><msub xmlns=""><mi mathvariant="normal">Si/SiO</mi><mrow><mn>2</mn></mrow></msub></math> superlattices formed by ion sputtering

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Variable coupling in n-type silicon–germanium double quantum dots

Andrew J. Ferguson; David G. Hasko; H. Ahmed; David A. Williams

Appl. Phys. Lett. 82, 4492–4494 (2003) https://doi.org/10.1063/1.1577826

Abstract

View articletitled, Variable coupling in n-type silicon–germanium double quantum dots

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Pyronin B as a donor for n-type doping of organic thin films

A. G. Werner; F. Li; K. Harada; M. Pfeiffer; T. Fritz; K. Leo

Appl. Phys. Lett. 82, 4495–4497 (2003) https://doi.org/10.1063/1.1583872

Abstract

View articletitled, Pyronin B as a donor for n-type doping of organic thin films

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Ballistic electron emission luminescence

Ian Appelbaum; K. J. Russell; V. Narayanamurti; D. J. Monsma; C. M. Marcus; M. P. Hanson; A. C. Gossard; H. Temkin; C. H. Perry

Appl. Phys. Lett. 82, 4498–4500 (2003) https://doi.org/10.1063/1.1584524

Abstract

View articletitled, Ballistic electron emission luminescence

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Exciton and carrier motion in quaternary AlInGaN

K. Kazlauskas; G. Tamulaitis; A. Žukauskas; M. A. Khan; J. W. Yang; J. Zhang; E. Kuokstis; G. Simin; M. S. Shur; R. Gaska

Appl. Phys. Lett. 82, 4501–4503 (2003) https://doi.org/10.1063/1.1586782

Abstract

View articletitled, Exciton and carrier motion in quaternary AlInGaN

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Effect of surface treatment on leakage current of GaAs/AlGaAs laser microcavities

Jun-Youn Kim; Jawoong Lee; Jungyeon Kim; Bongkoo Kang; O’Dae Kwon

Appl. Phys. Lett. 82, 4504–4506 (2003) https://doi.org/10.1063/1.1584784

Abstract

View articletitled, Effect of surface treatment on leakage current of GaAs/AlGaAs laser microcavities

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High tunnel magnetoresistance in epitaxial Fe/MgO/Fe tunnel junctions

J. Faure-Vincent; C. Tiusan; E. Jouguelet; F. Canet; M. Sajieddine; C. Bellouard; E. Popova; M. Hehn; F. Montaigne; A. Schuhl

Appl. Phys. Lett. 82, 4507–4509 (2003) https://doi.org/10.1063/1.1586785

Abstract

View articletitled, High tunnel magnetoresistance in epitaxial Fe/MgO/Fe tunnel junctions

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Physical explanation of the barrier height temperature dependence in metal-oxide-semiconductor leakage current models

Dietmar Schroeder; Alejandro Avellán

Appl. Phys. Lett. 82, 4510–4512 (2003) https://doi.org/10.1063/1.1587256

Abstract

View articletitled, Physical explanation of the barrier height temperature dependence in metal-oxide-semiconductor leakage current models

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MAGNETISM AND SUPERCONDUCTIVITY

Magnetic property enhancement of melt-spun $\Pr_{2} {Fe}_{23} B_{3}$ ribbons with dilute Ti substitution

H. W. Chang; C. H. Chiu; W. C. Chang

Appl. Phys. Lett. 82, 4513–4515 (2003) https://doi.org/10.1063/1.1584787

Abstract

View articletitled, Magnetic property enhancement of melt-spun <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Pr</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Fe</mi><mrow><mn>23</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">B</mi><mrow><mn>3</mn></mrow></msub></math> ribbons with dilute Ti substitution

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Laser threshold reduction in a spintronic device

J. Rudolph; D. Hägele; H. M. Gibbs; G. Khitrova; M. Oestreich

Appl. Phys. Lett. 82, 4516–4518 (2003) https://doi.org/10.1063/1.1583145

Abstract

View articletitled, Laser threshold reduction in a spintronic device

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Strongly coupled critical current density values achieved in $Y_{1} {Ba}_{2} {Cu}_{3} O_{7−δ}$ coated conductors with near-single-crystal texture

S. R. Foltyn; P. N. Arendt; Q. X. Jia; H. Wang; J. L. MacManus-Driscoll; S. Kreiskott; R. F. DePaula; L. Stan; J. R. Groves; P. C. Dowden

Appl. Phys. Lett. 82, 4519–4521 (2003) https://doi.org/10.1063/1.1584783

Abstract

View articletitled, Strongly coupled critical current density values achieved in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Y</mi><mrow><mn>1</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ba</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Cu</mi><mrow><mn>3</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mtext>7−δ</mtext></mrow></msub></math> coated conductors with near-single-crystal texture

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Conducting atomic-force-microscope electrical characterization of submicron magnetic tunnel junctions

D. C. Worledge; David W. Abraham

Appl. Phys. Lett. 82, 4522–4524 (2003) https://doi.org/10.1063/1.1582375

Abstract

View articletitled, Conducting atomic-force-microscope electrical characterization of submicron magnetic tunnel junctions

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Microwave intermodulation distortion of ${MgB}_{2}$ thin films

G. Lamura; A. J. Purnell; L. F. Cohen; A. Andreone; F. Chiarella; E. Di Gennaro; R. Vaglio; L. Hao; J. Gallop

Appl. Phys. Lett. 82, 4525–4527 (2003) https://doi.org/10.1063/1.1584519

Abstract

View articletitled, Microwave intermodulation distortion of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">MgB</mi><mrow><mn>2</mn></mrow></msub></math> thin films

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High-resolution detection of resonant frequencies of microwave resonators via magnetic measurements

R. Amigó; J. M. Hernandez; A. Garcı́a-Santiago; J. Tejada

Appl. Phys. Lett. 82, 4528–4530 (2003) https://doi.org/10.1063/1.1586786

Abstract

View articletitled, High-resolution detection of resonant frequencies of microwave resonators via magnetic measurements

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Strain-induced charge depletion in ${La}_{2/3} {Ca}_{1/3} {MnO}_{3}$ epitaxial thin films

S. Valencia; Ll Balcells; J. Fontcuberta; B. Martı́nez

Appl. Phys. Lett. 82, 4531–4533 (2003) https://doi.org/10.1063/1.1587000

Abstract

View articletitled, Strain-induced charge depletion in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">La</mi><mrow><mtext>2/3</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ca</mi><mrow><mtext>1/3</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">MnO</mi><mrow><mn>3</mn></mrow></msub></math> epitaxial thin films

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Structural and magnetic properties of triode-sputtered epitaxial $γ^{'} - {Fe}_{4} N$ films deposited on ${SrTiO}_{3}$ (001) substrates

K. R. Nikolaev; I. N. Krivorotov; E. D. Dahlberg; V. A. Vas’ko; S. Urazhdin; R. Loloee; W. P. Pratt, Jr.

Appl. Phys. Lett. 82, 4534–4536 (2003) https://doi.org/10.1063/1.1586790

Abstract

View articletitled, Structural and magnetic properties of triode-sputtered epitaxial <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi>γ</mi><mrow><mi>′</mi></mrow></msup><mi xmlns="">-</mi><msub xmlns=""><mi mathvariant="normal">Fe</mi><mrow><mn>4</mn></mrow></msub><mi mathvariant="normal" xmlns="">N</mi></math> films deposited on <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SrTiO</mi><mrow><mn>3</mn></mrow></msub></math> (001) substrates

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DIELECTRICS AND FERROELECTRICITY

${Ba}_{8} {ZnTa}_{6} O_{24} :$ a high- $Q$ microwave dielectric from a potentially diverse homologous series

S. M. Moussa; J. B. Claridge; M. J. Rosseinsky; S. Clarke; R. M. Ibberson; T. Price; D. M. Iddles; D. C. Sinclair

Appl. Phys. Lett. 82, 4537–4539 (2003) https://doi.org/10.1063/1.1582363

Abstract

View articletitled, <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ba</mi><mrow><mn>8</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">ZnTa</mi><mrow><mn>6</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>24</mn></mrow></msub><mi xmlns="">:</mi></math> a high-<math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">Q</mi></math> microwave dielectric from a potentially diverse homologous series

Supplementary Material

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Residual stress analysis in ferroelectric $Pb ({Zr}_{0.52} {Ti}_{0.48}) O_{3}$ thin films fabricated by a sol-gel process

Kui Yao; Shuhui Yu; Francis Eng-Hock Tay

Appl. Phys. Lett. 82, 4540–4542 (2003) https://doi.org/10.1063/1.1587272

Abstract

View articletitled, Residual stress analysis in ferroelectric <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">Pb</mi><mi xmlns="">(</mi><msub xmlns=""><mi mathvariant="normal">Zr</mi><mrow><mtext>0.52</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ti</mi><mrow><mtext>0.48</mtext></mrow></msub><mi xmlns="">)</mi><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>3</mn></mrow></msub></math> thin films fabricated by a sol-gel process

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NANOSCALE SCIENCE AND DESIGN

Voltage-induced phase transition in arrays of metallic nanodots: Computed transport and surface potential structure

F. Remacle; R. D. Levine

Appl. Phys. Lett. 82, 4543–4545 (2003) https://doi.org/10.1063/1.1583871

Abstract

View articletitled, Voltage-induced phase transition in arrays of metallic nanodots: Computed transport and surface potential structure

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White light source in infrared region from InAs quantum dots grown on (001) InP substrates by droplet heteroepitaxy

R. Oga; W. S. Lee; Y. Fujiwara; Y. Takeda

Appl. Phys. Lett. 82, 4546–4548 (2003) https://doi.org/10.1063/1.1585138

Abstract

View articletitled, White light source in infrared region from InAs quantum dots grown on (001) InP substrates by droplet heteroepitaxy

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Surface pattern evolution during thermal ${Cl}_{2}$ etching of GaAs(001)

J. H. Schmid; R. Mar; T. Tiedje

Appl. Phys. Lett. 82, 4549–4551 (2003) https://doi.org/10.1063/1.1584091

Abstract

View articletitled, Surface pattern evolution during thermal <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Cl</mi><mrow><mn>2</mn></mrow></msub></math> etching of GaAs(001)

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Direct measurement of polarization resolved transition dipole moment in InGaAs/GaAs quantum dots

K. L. Silverman; R. P. Mirin; S. T. Cundiff; A. G. Norman

Appl. Phys. Lett. 82, 4552–4554 (2003) https://doi.org/10.1063/1.1584514

Abstract

View articletitled, Direct measurement of polarization resolved transition dipole moment in InGaAs/GaAs quantum dots

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Surface morphology control of InAs nanostructures grown on InGaAs/InP

Z. H. Zhang; G. W. Pickrell; K. L. Chang; H. C. Lin; K. C. Hsieh; K. Y. Cheng

Appl. Phys. Lett. 82, 4555–4557 (2003) https://doi.org/10.1063/1.1584523

Abstract

View articletitled, Surface morphology control of InAs nanostructures grown on InGaAs/InP

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Time-delayed indium incorporation in ultrathin $({In}_{x} {Ga}_{1−x} N/GaN)$ multiple quantum wells grown by metalorganic vapor phase epitaxy

F. Schulze; J. Bläsing; A. Dadgar; A. Krost

Appl. Phys. Lett. 82, 4558–4560 (2003) https://doi.org/10.1063/1.1586472

Abstract

View articletitled, Time-delayed indium incorporation in ultrathin <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">(</mi><msub xmlns=""><mi mathvariant="normal">In</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>1−x</mtext></mrow></msub><mi mathvariant="normal" xmlns="">N/GaN</mi><mi xmlns="">)</mi></math> multiple quantum wells grown by metalorganic vapor phase epitaxy

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Fano resonances in open quantum dots and their application as spin filters

J. F. Song; Y. Ochiai; J. P. Bird

Appl. Phys. Lett. 82, 4561–4563 (2003) https://doi.org/10.1063/1.1586788

Abstract

View articletitled, Fano resonances in open quantum dots and their application as spin filters

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Triangular gallium nitride nanorods

Seung Yong Bae; Hee Won Seo; Jeunghee Park; Hyunik Yang; Hyunsuk Kim; Sangsig Kim

Appl. Phys. Lett. 82, 4564–4566 (2003) https://doi.org/10.1063/1.1583873

Abstract

View articletitled, Triangular gallium nitride nanorods

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Controllable electronic structures and related properties in a double-barrier nanoring

Xiquan Yu; Jia-Lin Zhu; Xiao Hu

Appl. Phys. Lett. 82, 4567–4569 (2003) https://doi.org/10.1063/1.1585136

Abstract

View articletitled, Controllable electronic structures and related properties in a double-barrier nanoring

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Magnetic orderings in Al nanowires suspended between electrodes

Tomoya Ono; Shigeru Tsukamoto; Kikuji Hirose

Appl. Phys. Lett. 82, 4570–4572 (2003) https://doi.org/10.1063/1.1586459

Abstract

View articletitled, Magnetic orderings in Al nanowires suspended between electrodes

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Field-emission properties of molybdenum disulfide nanotubes

Vincenc Nemanič; Marko Žumer; Bojan Zajec; Jurij Pahor; Maja Remškar; Aleš Mrzel; Peter Panjan; Dragan Mihailovič

Appl. Phys. Lett. 82, 4573–4575 (2003) https://doi.org/10.1063/1.1586462

Abstract

View articletitled, Field-emission properties of molybdenum disulfide nanotubes

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DEVICE PHYSICS

Scaling behavior and parasitic series resistance in disordered organic field-effect transistors

E. J. Meijer; G. H. Gelinck; E. van Veenendaal; B.-H. Huisman; D. M. de Leeuw; T. M. Klapwijk

Appl. Phys. Lett. 82, 4576–4578 (2003) https://doi.org/10.1063/1.1581389

Abstract

View articletitled, Scaling behavior and parasitic series resistance in disordered organic field-effect transistors

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Vertical channel all-organic thin-film transistors

R. Parashkov; E. Becker; S. Hartmann; G. Ginev; D. Schneider; H. Krautwald; T. Dobbertin; D. Metzdorf; F. Brunetti; C. Schildknecht; A. Kammoun; M. Brandes; T. Riedl; H.-H. Johannes; W. Kowalsky

Appl. Phys. Lett. 82, 4579–4580 (2003) https://doi.org/10.1063/1.1584786

Abstract

View articletitled, Vertical channel all-organic thin-film transistors

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Fabrication and characterization of $C_{60}$ thin-film transistors with high field-effect mobility

S. Kobayashi; T. Takenobu; S. Mori; A. Fujiwara; Y. Iwasa

Appl. Phys. Lett. 82, 4581–4583 (2003) https://doi.org/10.1063/1.1577383

Abstract

View articletitled, Fabrication and characterization of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">C</mi><mrow><mn>60</mn></mrow></msub></math> thin-film transistors with high field-effect mobility

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Charge-injection-controlled organic transistor

Ken-ichi Nakayama; Shin-ya Fujimoto; Masaaki Yokoyama

Appl. Phys. Lett. 82, 4584–4586 (2003) https://doi.org/10.1063/1.1577389

Abstract

View articletitled, Charge-injection-controlled organic transistor

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Electrochemically doped polymeric anode for improving the performance of molecular organic light-emitting diodes

F. Zhang; A. Petr; L. Dunsch

Appl. Phys. Lett. 82, 4587–4589 (2003) https://doi.org/10.1063/1.1586784

Abstract

View articletitled, Electrochemically doped polymeric anode for improving the performance of molecular organic light-emitting diodes

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Sound-resonance hydrogen sensor

Shuxiang Dong; Feiming Bai; JieFang Li; Dwight Viehland

Appl. Phys. Lett. 82, 4590–4592 (2003) https://doi.org/10.1063/1.1586994

Abstract

View articletitled, Sound-resonance hydrogen sensor

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AlGaN/GaN/AlGaN double heterostructure for high-power III-N field-effect transistors

C. Q. Chen; J. P. Zhang; V. Adivarahan; A. Koudymov; H. Fatima; G. Simin; J. Yang; M. Asif Khan

Appl. Phys. Lett. 82, 4593–4595 (2003) https://doi.org/10.1063/1.1587274

Abstract

View articletitled, AlGaN/GaN/AlGaN double heterostructure for high-power III-N field-effect transistors

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INTERDISCIPLINARY AND GENERAL PHYSICS

Near-field scattering of longitudinal fields

Alexandre Bouhelier; Michael R. Beversluis; Lukas Novotny

Appl. Phys. Lett. 82, 4596–4598 (2003) https://doi.org/10.1063/1.1586482

Abstract

View articletitled, Near-field scattering of longitudinal fields

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Magneto-optic effects in spin-injection devices

S. T. Ruggiero; A. Williams; C. E. Tanner; S. Potashnik; J. Moreland; W. H. Rippard

Appl. Phys. Lett. 82, 4599–4601 (2003) https://doi.org/10.1063/1.1584788

Abstract

View articletitled, Magneto-optic effects in spin-injection devices

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Table-top X-pinch for x-ray radiography

F. N. Beg; K. Krushelnick; P. Lichtsteiner; A. Meakins; A. Kennedy; N. Kajumba; G. Burt; A. E. Dangor

Appl. Phys. Lett. 82, 4602–4604 (2003) https://doi.org/10.1063/1.1584782

Abstract

View articletitled, Table-top X-pinch for x-ray radiography

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Why is exciton dissociation so efficient at the interface between a conjugated polymer and an electron acceptor?

V. I. Arkhipov; P. Heremans; H. Bässler

Appl. Phys. Lett. 82, 4605–4607 (2003) https://doi.org/10.1063/1.1586456

Abstract

View articletitled, Why is exciton dissociation so efficient at the interface between a conjugated polymer and an electron acceptor?

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Analysis of surface acoustic wave propagation on a cylinder using laser ultrasonics

D. Clorennec; D. Royer

Appl. Phys. Lett. 82, 4608–4610 (2003) https://doi.org/10.1063/1.1586463

Abstract

View articletitled, Analysis of surface acoustic wave propagation on a cylinder using laser ultrasonics

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ERRATA

Publisher’s Note: “Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy” [Appl. Phys. Lett. 82, 3433 (2003)]

J. Oila; J. Kivioja; V. Ranki; K. Saarinen; D. C. Look; R. J. Molnar; S. S. Park; S. K. Lee; J. Y. Han

Appl. Phys. Lett. 82, 4611 (2003) https://doi.org/10.1063/1.1589006

View articletitled, Publisher’s Note: “Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy” [Appl. Phys. Lett. 82, 3433 (2003)]

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Issues

LASERS, OPTICS, AND OPTOELECTRONICS

PLASMAS AND ELECTRICAL DISCHARGES

STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

ELECTRONIC TRANSPORT AND SEMICONDUCTORS

MAGNETISM AND SUPERCONDUCTIVITY

DIELECTRICS AND FERROELECTRICITY

NANOSCALE SCIENCE AND DESIGN

DEVICE PHYSICS

INTERDISCIPLINARY AND GENERAL PHYSICS

ERRATA

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