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Volume 82, Issue 24

16 June 2003

Applied Physics Letters Cover Image for Volume 82, Issue 24

ISSN 0003-6951

EISSN 1077-3118

In this Issue

LASERS, OPTICS, AND OPTOELECTRONICS
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
ELECTRONIC TRANSPORT AND SEMICONDUCTORS
MAGNETISM AND SUPERCONDUCTIVITY
DIELECTRICS AND FERROELECTRICITY
NANOSCALE SCIENCE AND DESIGN
DEVICE PHYSICS
INTERDISCIPLINARY AND GENERAL PHYSICS

LASERS, OPTICS, AND OPTOELECTRONICS

Bistable chiral-splay nematic liquid crystal device using horizontal switching

Seo Hern Lee; Kyoung-Ho Park; Tae-Hoon Yoon; Jae Chang Kim

Appl. Phys. Lett. 82, 4215–4217 (2003) https://doi.org/10.1063/1.1581368

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Nonvolatile two-color holographic recording in nondoped near-stoichiometric lithium tantalate crystals with continuous-wave lasers

Youwen Liu; Kenji Kitamura; Shunji Takekawa; Masaru Nakamura; Yasunori Furukawa; Hideki Hatano

Appl. Phys. Lett. 82, 4218–4220 (2003) https://doi.org/10.1063/1.1583136

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Quantum cascade lasers grown by metalorganic vapor phase epitaxy

J. S. Roberts; R. P. Green; L. R. Wilson; E. A. Zibik; D. G. Revin; J. W. Cockburn; R. J. Airey

Appl. Phys. Lett. 82, 4221–4223 (2003) https://doi.org/10.1063/1.1583858

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White organic light-emitting devices using a phosphorescent sensitizer

Gang Cheng; Feng Li; Yu Duan; Jing Feng; Shiyong Liu; Song Qiu; Dong Lin; Yuguang Ma; S. T. Lee

Appl. Phys. Lett. 82, 4224–4226 (2003) https://doi.org/10.1063/1.1584075

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Experimental synthesis of fiber Bragg gratings using optical low coherence reflectometry

Xavier Chapeleau; Dominique Leduc; Cyril Lupi; Roger Le Ny; Marc Douay; Pierre Niay; Christian Boisrobert

Appl. Phys. Lett. 82, 4227–4229 (2003) https://doi.org/10.1063/1.1584090

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Second-harmonic generation in two-dimensional periodically poled lithium niobate using second-order quasiphase matching

Peigen Ni; Boqin Ma; Xuehua Wang; Bingying Cheng; Daozhong Zhang

Appl. Phys. Lett. 82, 4230–4232 (2003) https://doi.org/10.1063/1.1579856

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Submicron periodically poled flux-grown ${KTiOPO}_{4}$

C. Canalias; V. Pasiskevicius; R. Clemens; F. Laurell

Appl. Phys. Lett. 82, 4233–4235 (2003) https://doi.org/10.1063/1.1583144

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Gain switching of an external cavity grating-coupled surface emitting laser with wide tunability

Y. Hu; A. Gubenko; G. Venus; I. Gadjiev; N. Il’inskaja; S. Nesterov; E. Portnoi; M. Dubov; I. Khrushchev

Appl. Phys. Lett. 82, 4236–4237 (2003) https://doi.org/10.1063/1.1584521

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Effect of thermal annealing on the lifetime of polymer light-emitting diodes

Jinook Kim; Jaeyoon Lee; C. W. Han; N. Y. Lee; In-Jae Chung

Appl. Phys. Lett. 82, 4238–4240 (2003) https://doi.org/10.1063/1.1582359

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Enhanced absorbance of a strained nanoscale Si-layered system

Z. T. Kuznicki; M. Ley

Appl. Phys. Lett. 82, 4241–4243 (2003) https://doi.org/10.1063/1.1582365

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Formation of ring patterns surrounded by ripples by single-shot laser irradiation with ultrashort pulse width at the solid/liquid interface

Kenji Katayama; Hideaki Yonekubo; Tsuguo Sawada

Appl. Phys. Lett. 82, 4244–4246 (2003) https://doi.org/10.1063/1.1582372

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Sn-enhanced epitaxial thickness during low-temperature Ge(001) molecular-beam epitaxy

K. A. Bratland; Y. L. Foo; P. Desjardins; J. E. Greene

Appl. Phys. Lett. 82, 4247–4249 (2003) https://doi.org/10.1063/1.1578712

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Lattice expansion in nanocrystalline niobium thin films

R. Banerjee; E. A. Sperling; G. B. Thompson; H. L. Fraser; S. Bose; P. Ayyub

Appl. Phys. Lett. 82, 4250–4252 (2003) https://doi.org/10.1063/1.1582361

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In situ x-ray diffraction study on AgI nanowire arrays

Yinhai Wang; Changhui Ye; Guozhong Wang; Lide Zhang; Yanmei Liu; Zhongyan Zhao

Appl. Phys. Lett. 82, 4253–4255 (2003) https://doi.org/10.1063/1.1583856

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SiGe-free strained Si on insulator by wafer bonding and layer transfer

T. A. Langdo; M. T. Currie; A. Lochtefeld; R. Hammond; J. A. Carlin; M. Erdtmann; G. Braithwaite; V. K. Yang; C. J. Vineis; H. Badawi; M. T. Bulsara

Appl. Phys. Lett. 82, 4256–4258 (2003) https://doi.org/10.1063/1.1581371

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Selective modification of band gap in GaInNAs/GaAs structures by quantum-well intermixing

R. Macaluso; H. D. Sun; M. D. Dawson; F. Robert; A. C. Bryce; J. H. Marsh; H. Riechert

Appl. Phys. Lett. 82, 4259–4261 (2003) https://doi.org/10.1063/1.1583865

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Void-mediated formation of Sn quantum dots in a Si matrix

Y. Lei; P. Möck; T. Topuria; N. D. Browning; R. Ragan; K. S. Min; H. A. Atwater

Appl. Phys. Lett. 82, 4262–4264 (2003) https://doi.org/10.1063/1.1584073

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Copper thin film of alternating textures

Hanchen Huang; H. L. Wei; C. H. Woo; X. X. Zhang

Appl. Phys. Lett. 82, 4265–4267 (2003) https://doi.org/10.1063/1.1583866

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Surface band-bending effects on the optical properties of indium gallium nitride multiple quantum wells

L.-H. Peng; C.-W. Shih; C.-M. Lai; C.-C. Chuo; J.-I. Chyi

Appl. Phys. Lett. 82, 4268–4270 (2003) https://doi.org/10.1063/1.1583869

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Bioceramic hydroxyapatite at high pressures

Nenad Velisavljevic; Yogesh K. Vohra

Appl. Phys. Lett. 82, 4271–4273 (2003) https://doi.org/10.1063/1.1584076

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Strain-induced ordering in ${In}_{x} {Ga}_{1−x} N$ alloys

L. K. Teles; L. G. Ferreira; J. R. Leite; L. M. R. Scolfaro; A. Kharchenko; O. Husberg; D. J. As; D. Schikora; K. Lischka

Appl. Phys. Lett. 82, 4274–4276 (2003) https://doi.org/10.1063/1.1583854

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Emissions from single localized states observed in ZnCdS ternary alloy mesa structures

H. Kumano; Y. Hitaka; I. Suemune

Appl. Phys. Lett. 82, 4277–4279 (2003) https://doi.org/10.1063/1.1583859

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Preparation of clean reconstructed InAs(001) surfaces using HCl/isopropanol wet treatments

O. E. Tereshchenko; D. Paget; P. Chiaradia; J. E. Bonnet; F. Wiame; A. Taleb-Ibrahimi

Appl. Phys. Lett. 82, 4280–4282 (2003) https://doi.org/10.1063/1.1583851

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Formation of free-standing micropyramidal colloidal crystals grown on silicon substrate

Shigeki Matsuo; Takatomi Fujine; Koichi Fukuda; Saulius Juodkazis; Hiroaki Misawa

Appl. Phys. Lett. 82, 4283–4285 (2003) https://doi.org/10.1063/1.1583138

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Quantum design and synthesis of a boron–oxygen–yttrium phase

Denis Music; Valeriu Chirita; Ulrich Kreissig; Zsolt Czigány; Jochen M. Schneider; Ulf Helmersson

Appl. Phys. Lett. 82, 4286–4288 (2003) https://doi.org/10.1063/1.1584522

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

High-conductivity n-AlGaN with high Al mole fraction grown by metalorganic vapor phase deposition

M. Pophristic; S. P. Guo; B. Peres

Appl. Phys. Lett. 82, 4289–4291 (2003) https://doi.org/10.1063/1.1582377

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Photocurrent noise in multi-quantum-well infrared photodetectors

A. Carbone; R. Introzzi; H. C. Liu

Appl. Phys. Lett. 82, 4292–4294 (2003) https://doi.org/10.1063/1.1581388

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Epitaxial colossal magnetoresistive ${La}_{0.67} (Sr,Ca)_{0.33} {MnO}_{3}$ films on Si

J.-H. Kim; S. I. Khartsev; A. M. Grishin

Appl. Phys. Lett. 82, 4295–4297 (2003) https://doi.org/10.1063/1.1583133

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First-principles study of $n$ -type dopants and their clustering in SiC

R. Rurali; P. Godignon; J. Rebollo; E. Hernández; P. Ordejón

Appl. Phys. Lett. 82, 4298–4300 (2003) https://doi.org/10.1063/1.1583870

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Enhancement of Schottky barrier height on AlGaN/GaN heterostructure by oxidation annealing

Chang Min Jeon; Jong-Lam Lee

Appl. Phys. Lett. 82, 4301–4303 (2003) https://doi.org/10.1063/1.1583140

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Metal–oxide–semiconductor devices using ${Ga}_{2} O_{3}$ dielectrics on $n$ -type GaN

Ching-Ting Lee; Hong-Wei Chen; Hsin-Ying Lee

Appl. Phys. Lett. 82, 4304–4306 (2003) https://doi.org/10.1063/1.1584520

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MAGNETISM AND SUPERCONDUCTIVITY

High-coercivity ultralight transparent magnets

M. Gich; Ll. Casas; A. Roig; E. Molins; J. Sort; S. Suriñach; M. D. Baró; J. S. Muñoz; L. Morellon; M. R. Ibarra; J. Nogués

Appl. Phys. Lett. 82, 4307–4309 (2003) https://doi.org/10.1063/1.1578538

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${In}_{1−x} {Mn}_{x} Sb$ —a narrow-gap ferromagnetic semiconductor

T. Wojtowicz; G. Cywiński; W. L. Lim; X. Liu; M. Dobrowolska; J. K. Furdyna; K. M. Yu; W. Walukiewicz; G. B. Kim; M. Cheon; X. Chen; S. M. Wang; H. Luo

Appl. Phys. Lett. 82, 4310–4312 (2003) https://doi.org/10.1063/1.1583142

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Sensitive detection of irreversible switching in a single FePt nanosized dot

N. Kikuchi; S. Okamoto; O. Kitakami; Y. Shimada; K. Fukamichi

Appl. Phys. Lett. 82, 4313–4315 (2003) https://doi.org/10.1063/1.1580994

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Experimental probing of the anisotropy of the empty p states near the Fermi level in ${MgB}_{2}$

R. F. Klie; Y. Zhu; G. Schneider; J. Tafto

Appl. Phys. Lett. 82, 4316–4318 (2003) https://doi.org/10.1063/1.1583132

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Thickness dependence of the properties of epitaxial ${MgB}_{2}$ thin films grown by hybrid physical-chemical vapor deposition

A. V. Pogrebnyakov; J. M. Redwing; J. E. Jones; X. X. Xi; S. Y. Xu; Qi Li; V. Vaithyanathan; D. G. Schlom

Appl. Phys. Lett. 82, 4319–4321 (2003) https://doi.org/10.1063/1.1583852

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DIELECTRICS AND FERROELECTRICITY

Nanoscale polarization manipulation and conductance switching in ultrathin films of a ferroelectric copolymer

Hongwei Qu; Wei Yao; T. Garcia; Jiandi Zhang; A. V. Sorokin; S. Ducharme; P. A. Dowben; V. M. Fridkin

Appl. Phys. Lett. 82, 4322–4324 (2003) https://doi.org/10.1063/1.1582366

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Ferroelectric properties of $({Ba}_{0.5} {Sr}_{0.5}) {TiO}_{3} / Pb ({Zr}_{0.52} {Ti}_{0.48}) O_{3} /$ $({Ba}_{0.5} {Sr}_{0.5}) {TiO}_{3}$ thin films with platinum electrodes

Feng Yan; Yening Wang; Helen L. W. Chan; Chung Loong Choy

Appl. Phys. Lett. 82, 4325–4327 (2003) https://doi.org/10.1063/1.1583137

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Supercritical carbon dioxide extraction of porogens for the preparation of ultralow-dielectric-constant films

T. Rajagopalan; B. Lahlouh; J. A. Lubguban; N. Biswas; S. Gangopadhyay; J. Sun; D. H. Huang; S. L. Simon; A. Mallikarjunan; H.-C. Kim; W. Volksen; M. F. Toney; E. Huang; P. M. Rice; E. Delenia; R. D. Miller

Appl. Phys. Lett. 82, 4328–4330 (2003) https://doi.org/10.1063/1.1583139

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Effects of interfacial nitrogen on the structural and electrical properties of ultrathin ${ZrO}_{2}$ gate dielectrics on partially strain-compensated SiGeC/Si heterolayers

R. Mahapatra; S. Maikap; Je-Hun Lee; G. S. Kar; A. Dhar; Nong-M. Hwang; Doh-Y. Kim; B. K. Mathur; S. K. Ray

Appl. Phys. Lett. 82, 4331–4333 (2003) https://doi.org/10.1063/1.1583143

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NANOSCALE SCIENCE AND DESIGN

Role of extrinsic atoms on the morphology and field emission properties of carbon nanotubes

L. H. Chan; K. H. Hong; D. Q. Xiao; W. J. Hsieh; S. H. Lai; H. C. Shih; T. C. Lin; F. S. Shieu; K. J. Chen; H. C. Cheng

Appl. Phys. Lett. 82, 4334–4336 (2003) https://doi.org/10.1063/1.1579136

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Self-embedded nanocrystalline chromium carbides on well-aligned carbon nanotips

C. L. Tsai; J. H. Hsu; C. F. Chen

Appl. Phys. Lett. 82, 4337–4339 (2003) https://doi.org/10.1063/1.1579867

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II–VI quantum dot formation induced by surface energy change of a strained layer

F. Tinjod; B. Gilles; S. Moehl; K. Kheng; H. Mariette

Appl. Phys. Lett. 82, 4340–4342 (2003) https://doi.org/10.1063/1.1583141

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Effect of Si delta doping on the luminescence properties of InP/InAlP quantum dots

X. B. Zhang; R. D. Heller; M. S. Noh; R. D. Dupuis; G. Walter; N. Holonyak, Jr.

Appl. Phys. Lett. 82, 4343–4345 (2003) https://doi.org/10.1063/1.1582364

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Dilute ${LaB}_{6}$ nanoparticles in polymer as optimized clear solar control glazing

Stefan Schelm; Geoff B. Smith

Appl. Phys. Lett. 82, 4346–4348 (2003) https://doi.org/10.1063/1.1584092

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Controlled self-assembly of semiconductor quantum dots using shadow masks

T. Schallenberg; T. Borzenko; G. Schmidt; M. Obert; G. Bacher; C. Schumacher; G. Karczewski; L. W. Molenkamp; S. Rodt; R. Heitz; D. Bimberg

Appl. Phys. Lett. 82, 4349–4351 (2003) https://doi.org/10.1063/1.1584511

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Fabrication of monodispersive FePt nanoparticle films stabilized on rigid substrates

Andrew C. C. Yu; Mikihisa Mizuno; Yuichi Sasaki; Makoto Inoue; Hirofumi Kondo; Ippei Ohta; David Djayaprawira; Migaku Takahashi

Appl. Phys. Lett. 82, 4352–4354 (2003) https://doi.org/10.1063/1.1584791

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Electron localization by self-assembled GaSb/GaAs quantum dots

M. Hayne; J. Maes; S. Bersier; V. V. Moshchalkov; A. Schliwa; L. Müller-Kirsch; C. Kapteyn; R. Heitz; D. Bimberg

Appl. Phys. Lett. 82, 4355–4357 (2003) https://doi.org/10.1063/1.1583853

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Schottky nanocontacts on ZnO nanorod arrays

W. I. Park; Gyu-Chul Yi; J.-W. Kim; S.-M. Park

Appl. Phys. Lett. 82, 4358–4360 (2003) https://doi.org/10.1063/1.1584089

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DEVICE PHYSICS

Impact of Si doping on radio frequency dispersion in unpassivated GaN/AlGaN/GaN high-electron-mobility transistors grown by plasma-assisted molecular-beam epitaxy

Oleg Mitrofanov; Michael Manfra; Nils Weimann

Appl. Phys. Lett. 82, 4361–4363 (2003) https://doi.org/10.1063/1.1582373

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Barrier heights of Schottky contacts on strained AlGaN/GaN heterostructures: Determination and effect of metal work functions

Zhaojun Lin; Wu Lu; Jaesun Lee; Dongmin Liu; Jeffrey S. Flynn; George R. Brandes

Appl. Phys. Lett. 82, 4364–4366 (2003) https://doi.org/10.1063/1.1584077

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Temperature dependence on current–voltage characteristics of nickel/diamond Schottky diodes on high quality boron-doped homoepitaxial diamond film

Y. G. Chen; M. Ogura; H. Okushi

Appl. Phys. Lett. 82, 4367–4369 (2003) https://doi.org/10.1063/1.1583868

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Quality assessment of ${CuInS}_{2}$ -based solar cells by Raman scattering

E. Rudigier; I. Luck; R. Scheer

Appl. Phys. Lett. 82, 4370–4372 (2003) https://doi.org/10.1063/1.1582362

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Flexible organic field-effect transistors fabricated by the electrode-peeling transfer with an assist of self-assembled monolayer

Katsuhiko Fujita; Takeshi Yasuda; Tetsuo Tsutsui

Appl. Phys. Lett. 82, 4373–4375 (2003) https://doi.org/10.1063/1.1583867

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Theory of avalanche multiplication and excess noise in quantum-well infrared photodetectors

Harald Schneider

Appl. Phys. Lett. 82, 4376–4378 (2003) https://doi.org/10.1063/1.1585134

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INTERDISCIPLINARY AND GENERAL PHYSICS

Acoustic waves generated by a laser line pulse in a transversely isotropic cylinder

Y. Pan; C. Rossignol; B. Audoin

Appl. Phys. Lett. 82, 4379–4381 (2003) https://doi.org/10.1063/1.1583135

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Microscopic mechanisms of ablation and micromachining of dielectrics by using femtosecond lasers

T. Q. Jia; Z. Z. Xu; X. X. Li; R. X. Li; B. Shuai; F. L. Zhao

Appl. Phys. Lett. 82, 4382–4384 (2003) https://doi.org/10.1063/1.1583857

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Wavelength selection with coupled surface plasmon waves

Yu Wang

Appl. Phys. Lett. 82, 4385–4387 (2003) https://doi.org/10.1063/1.1582357

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CuO-doped ${SnO}_{2}$ thin films as hydrogen sulfide gas sensor

Atul Khanna; Rajesh Kumar; S. S. Bhatti

Appl. Phys. Lett. 82, 4388–4390 (2003) https://doi.org/10.1063/1.1584071

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