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Issues
9 June 2003
ISSN 0003-6951
EISSN 1077-3118
In this Issue
LASERS, OPTICS, AND OPTOELECTRONICS
AlGaInP/mirror/Si light-emitting diodes with vertical electrodes by wafer bonding
Appl. Phys. Lett. 82, 4011–4013 (2003)
https://doi.org/10.1063/1.1579132
Ultrafast sampling measurements using the photomodulated kinetic inductance in high- superconductors
Appl. Phys. Lett. 82, 4014–4016 (2003)
https://doi.org/10.1063/1.1576905
Room-temperature low-voltage electroluminescence in amorphous carbon nitride thin films
Appl. Phys. Lett. 82, 4017–4019 (2003)
https://doi.org/10.1063/1.1581000
Temperature transients and thermal properties of GaAs/AlGaAs quantum-cascade lasers
Appl. Phys. Lett. 82, 4020–4022 (2003)
https://doi.org/10.1063/1.1582374
Polymer laser fabricated by a simple micromolding process
Appl. Phys. Lett. 82, 4023–4025 (2003)
https://doi.org/10.1063/1.1579858
Electrically tunable waveguide laser based on ferroelectric liquid crystal
Appl. Phys. Lett. 82, 4026–4028 (2003)
https://doi.org/10.1063/1.1580992
Monte Carlo simulation of tunable mid-infrared emission from coupled Wannier–Stark ladders in semiconductor superlattices
Appl. Phys. Lett. 82, 4029–4031 (2003)
https://doi.org/10.1063/1.1581382
Photoluminescence enhancement of colloidal quantum dots embedded in a monolithic microcavity
Appl. Phys. Lett. 82, 4032–4034 (2003)
https://doi.org/10.1063/1.1581007
Enhanced room-temperature emission in ions containing alumino-silicate glasses
Appl. Phys. Lett. 82, 4035–4037 (2003)
https://doi.org/10.1063/1.1581374
Extremely low threshold-current-density InGaAs quantum-well lasers with emission wavelength of 1215–1233 nm
Appl. Phys. Lett. 82, 4038–4040 (2003)
https://doi.org/10.1063/1.1581978
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
Is a bulk glass-forming alloy?
Appl. Phys. Lett. 82, 4041–4043 (2003)
https://doi.org/10.1063/1.1581001
Structures of nitrided Si(001) surfaces: First-principles theoretical study
Appl. Phys. Lett. 82, 4044–4046 (2003)
https://doi.org/10.1063/1.1580639
Orientation control of poly(vinylidenefluoride-trifluoroethylene) crystals and molecules using atomic force microscopy
Appl. Phys. Lett. 82, 4050–4052 (2003)
https://doi.org/10.1063/1.1581974
Oxygen vacancy ordering in epitaxial layers of yttrium oxide on Si (001)
Appl. Phys. Lett. 82, 4053–4055 (2003)
https://doi.org/10.1063/1.1581985
Photoluminescence of a superficial Si nanolayer and an example of its use
Appl. Phys. Lett. 82, 4056–4058 (2003)
https://doi.org/10.1063/1.1581984
Optical phonon spectra of GaP nanoparticles prepared by nanochemistry
Appl. Phys. Lett. 82, 4059–4061 (2003)
https://doi.org/10.1063/1.1580635
Periodical poling characteristics of congruent crystals at elevated temperature
Appl. Phys. Lett. 82, 4062–4064 (2003)
https://doi.org/10.1063/1.1582371
Midinfrared continuous-wave photoluminescence of lead–salt structures up to temperatures of 190 °C
Appl. Phys. Lett. 82, 4065–4067 (2003)
https://doi.org/10.1063/1.1582370
Experimental evidence of polarization dependence in the optical response of opal-based photonic crystals
Appl. Phys. Lett. 82, 4068–4070 (2003)
https://doi.org/10.1063/1.1582379
High-resolution near-field spectroscopy investigation of GaN laterally overgrown structures on SiC
Appl. Phys. Lett. 82, 4071–4073 (2003)
https://doi.org/10.1063/1.1580997
ELECTRONIC TRANSPORT AND SEMICONDUCTORS
Si dangling-bond-type defects at the interface of (100)Si with ultrathin
Appl. Phys. Lett. 82, 4074–4076 (2003)
https://doi.org/10.1063/1.1579564
Temperature dependence of carrier mobility in Si wafers measured by infrared photocarrier radiometry
Appl. Phys. Lett. 82, 4077–4079 (2003)
https://doi.org/10.1063/1.1582376
Stimulated emission and ultrafast carrier relaxation in AlGaN/GaN multiple quantum wells
Appl. Phys. Lett. 82, 4080–4082 (2003)
https://doi.org/10.1063/1.1581385
Deep-defect-induced quenching effects in semi-insulating GaN layers detected by photoelectrical spectroscopic techniques
Appl. Phys. Lett. 82, 4083–4085 (2003)
https://doi.org/10.1063/1.1579556
Non-volatile memory cells based on ferroelectric Schottky diodes
Appl. Phys. Lett. 82, 4089–4091 (2003)
https://doi.org/10.1063/1.1581365
Realization of one-chip-multiple-wavelength laser diodes with II–VI/III–V compound semiconductors
J. S. Song; M. W. Cho; D. C. Oh; H. Makino; T. Hanada; T. Yao; B. P. Zhang; Y. Segawa; J. H. Chang; H. S. Song; I. S. Cho; H. W. Kim; J. J. Jung
Appl. Phys. Lett. 82, 4095–4097 (2003)
https://doi.org/10.1063/1.1578178
MAGNETISM AND SUPERCONDUCTIVITY
Investigation on intergrain exchange coupling of nanocrystalline permanent magnets by Henkel plot
Appl. Phys. Lett. 82, 4098–4100 (2003)
https://doi.org/10.1063/1.1576291
Effect of Li doping on the magnetotransport properties of system: Decrease of metal–insulator transition temperature
Appl. Phys. Lett. 82, 4101–4103 (2003)
https://doi.org/10.1063/1.1580650
Vortex nucleation in submicrometer ferromagnetic disks
Appl. Phys. Lett. 82, 4110–4112 (2003)
https://doi.org/10.1063/1.1581363
High critical current density in iron-clad tapes
Appl. Phys. Lett. 82, 4113–4115 (2003)
https://doi.org/10.1063/1.1582358
Cooperative versus superparamagnetic behavior of dense magnetic nanoparticles in multilayers
Appl. Phys. Lett. 82, 4116–4118 (2003)
https://doi.org/10.1063/1.1581002
Current–voltage characteristics of Pb and Sn granular superconducting nanowires
Appl. Phys. Lett. 82, 4119–4121 (2003)
https://doi.org/10.1063/1.1582356
DIELECTRICS AND FERROELECTRICITY
45° rotational epitaxy of thin films on sulfide-buffered Si
Y.-Z. Yoo; P. Ahmet; Zheng-Wu Jin; K. Nakajima; T. Chikyow; M. Kawasaki; Y. Konishi; Y. Yonezawa; J. H. Song; H. Koinuma
Appl. Phys. Lett. 82, 4125–4127 (2003)
https://doi.org/10.1063/1.1581383
Different dynamic behaviors of and single crystals studied by micro-Brillouin scattering and dielectric spectroscopy
Appl. Phys. Lett. 82, 4128–4130 (2003)
https://doi.org/10.1063/1.1582353
NANOSCALE SCIENCE AND DESIGN
Electrical properties and transport in boron nitride nanotubes
M. Radosavljević; J. Appenzeller; V. Derycke; R. Martel; Ph. Avouris; A. Loiseau; J.-L. Cochon; D. Pigache
Appl. Phys. Lett. 82, 4131–4133 (2003)
https://doi.org/10.1063/1.1581370
Large frequency dependence of lowered maximum dielectric constant temperature of nanocrystals dispersed in mesoporous silicate
Shigemi Kohiki; Shinichiro Nogami; Shintaro Kawakami; Syozo Takada; Hirokazu Shimooka; Hiroyuki Deguchi; Masanori Mitome; Masaoki Oku
Appl. Phys. Lett. 82, 4134–4136 (2003)
https://doi.org/10.1063/1.1580991
Low-temperature conductance measurements on single molecules
Appl. Phys. Lett. 82, 4137–4139 (2003)
https://doi.org/10.1063/1.1574844
Measurement of carbon nanotube–polymer interfacial strength
Appl. Phys. Lett. 82, 4140–4142 (2003)
https://doi.org/10.1063/1.1579568
Marangoni effect in nanosphere-enhanced laser nanopatterning of silicon
Appl. Phys. Lett. 82, 4143–4145 (2003)
https://doi.org/10.1063/1.1581387
Efficient field emission from single crystalline indium oxide pyramids
Appl. Phys. Lett. 82, 4146–4148 (2003)
https://doi.org/10.1063/1.1582354
Evidence for trans-polyacetylene in nanocrystalline diamond films from H–D isotropic substitution experiments
Appl. Phys. Lett. 82, 4149–4150 (2003)
https://doi.org/10.1063/1.1582352
Growth of Si nanocrystals on alumina and integration in memory devices
Appl. Phys. Lett. 82, 4151–4153 (2003)
https://doi.org/10.1063/1.1577409
Growth and optical properties of GaN/AlN quantum wells
C. Adelmann; E. Sarigiannidou; D. Jalabert; Y. Hori; J.-L. Rouvière; B. Daudin; S. Fanget; C. Bru-Chevallier; T. Shibata; M. Tanaka
Appl. Phys. Lett. 82, 4154–4156 (2003)
https://doi.org/10.1063/1.1581386
DEVICE PHYSICS
Development of gold-doped for very-long-wavelength infrared detectors
Appl. Phys. Lett. 82, 4157–4159 (2003)
https://doi.org/10.1063/1.1581369
In situ control of electron gas dimensionality in freely suspended semiconductor membranes
Appl. Phys. Lett. 82, 4160–4162 (2003)
https://doi.org/10.1063/1.1580641
Polycrystalline Schottky diode with integrated antifuse: a nonvolatile memory cell
Appl. Phys. Lett. 82, 4163–4165 (2003)
https://doi.org/10.1063/1.1581364
Direct observation of lateral current spreading in ridge waveguide lasers using scanning voltage microscopy
Appl. Phys. Lett. 82, 4166–4168 (2003)
https://doi.org/10.1063/1.1581982
Optimum channel thickness in pentacene-based thin-film transistors
Appl. Phys. Lett. 82, 4169–4171 (2003)
https://doi.org/10.1063/1.1580993
Pentacene organic transistors and ring oscillators on glass and on flexible polymeric substrates
Appl. Phys. Lett. 82, 4175–4177 (2003)
https://doi.org/10.1063/1.1579870
Low-voltage organic electroluminescence device with an ultrathin, hybrid structure
Dirk Heithecker; Anis Kammoun; Thomas Dobbertin; Thomas Riedl; Eike Becker; Dirk Metzdorf; Daniel Schneider; Hans-Hermann Johannes; Wolfgang Kowalsky
Appl. Phys. Lett. 82, 4178–4180 (2003)
https://doi.org/10.1063/1.1582367
INTERDISCIPLINARY AND GENERAL PHYSICS
Atomic hydrogen cleaning of polarized GaAs photocathodes
T. Maruyama; D.-A. Luh; A. Brachmann; J. E. Clendenin; E. L. Garwin; S. Harvey; R. E. Kirby; C. Y. Prescott; R. Prepost
Appl. Phys. Lett. 82, 4184–4186 (2003)
https://doi.org/10.1063/1.1581981
Self-excited oscillatory dynamics of capillary bridges in electric fields
Appl. Phys. Lett. 82, 4187–4189 (2003)
https://doi.org/10.1063/1.1580995
Coulomb explosion in femtosecond laser ablation of Si(111)
Appl. Phys. Lett. 82, 4190–4192 (2003)
https://doi.org/10.1063/1.1580647
Quantitative strain analysis in AlGaAs-based devices
Jens W. Tomm; Axel Gerhardt; Roland Müller; Mark L. Biermann; Joseph P. Holland; Dirk Lorenzen; Eberhard Kaulfersch
Appl. Phys. Lett. 82, 4193–4195 (2003)
https://doi.org/10.1063/1.1579567
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Color astrophotography with a 100 mm-diameter f/2 polymer flat lens
Apratim Majumder, Monjurul Meem, et al.
Sputter epitaxy of ScAlN films on GaN high electron mobility transistor structures
Tomoya Okuda, Shunsuke Ota, et al.