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LASERS, OPTICS, AND OPTOELECTRONICS

Bleached state transmittance in charge-unbalanced all-solid-state electrochromic devices

Kwang-Soon Ahn; Yoon-Chae Nah; Jin-Young Park; Yung-Eun Sung; Ki-Yun Cho; Seung-Shik Shin; Jung-Ki Park

Appl. Phys. Lett. 82, 3379–3381 (2003) https://doi.org/10.1063/1.1575927

Abstract

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Simulation evidence for lateral excitation transfer in a self-assembled quantum-dot array

H. T. Johnson; R. Bose; H. D. Robinson; B. B. Goldberg

Appl. Phys. Lett. 82, 3382–3384 (2003) https://doi.org/10.1063/1.1575509

Abstract

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Fine-tuning photorefractive properties of monolithic molecular materials

Zhanjia Hou; Wei You; Luping Yu

Appl. Phys. Lett. 82, 3385–3387 (2003) https://doi.org/10.1063/1.1575938

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Efficient frequency doubling of a femtosecond pulse with simultaneous group-velocity matching and quasi phase matching in periodically poled, MgO-doped lithium niobate

Nan Ei Yu; Sunao Kurimura; Kenji Kitamura; Jung Hoon Ro; Myoungsik Cha; Satoshi Ashihara; Tsutomu Shimura; Kazuo Kuroda; Takunori Taira

Appl. Phys. Lett. 82, 3388–3390 (2003) https://doi.org/10.1063/1.1576296

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A hybrid laser system consisting of a frequency-doubled, narrow-line-width, distributed-feedback dye laser oscillator and a high saturation-fluence ${Ce:LiCaAlF}_{6}$ crystal amplifier

D. Q. Hoa; N. D. Hung; J. Moroe; N. Takeyasu; T. Imasaka

Appl. Phys. Lett. 82, 3391–3393 (2003) https://doi.org/10.1063/1.1576294

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Ultrafast photoinduced anisotropy and optical switching in azobenzene sidechain polymers

Hui Wang; Yaping Huang; Zhigang Liu; Fuli Zhao; Weizhu Lin; Jian Wang; Zhaoxi Liang

Appl. Phys. Lett. 82, 3394–3396 (2003) https://doi.org/10.1063/1.1576504

Abstract

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Very high average power at room temperature from $λ≈5.9-μ m$ quantum-cascade lasers

J. S. Yu; S. Slivken; A. Evans; J. David; M. Razeghi

Appl. Phys. Lett. 82, 3397–3399 (2003) https://doi.org/10.1063/1.1574404

Abstract

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Effect of nitrogen fraction on the temperature dependence of GaNAs/GaAs quantum-well emission

R. J. Potter; N. Balkan; H. Carrère; A. Arnoult; E. Bedel; X. Marie

Appl. Phys. Lett. 82, 3400–3402 (2003) https://doi.org/10.1063/1.1576511

Abstract

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Improved temperature characteristics of laser diodes with nonidentical multiple quantum wells due to temperature-induced carrier redistribution

Ching-Fuh Lin; Yi-Shin Su; Di-Ku Yu; Chao-Hsin Wu; Bing-Ruey Wu

Appl. Phys. Lett. 82, 3403–3405 (2003) https://doi.org/10.1063/1.1577384

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Analysis of thermal stress in wafer bonding of dissimilar materials for the introduction of an InP-based light emitter into a GaAs-based three-dimensional photonic crystal

Shinpei Ogawa; Masahiro Imada; Susumu Noda

Appl. Phys. Lett. 82, 3406–3408 (2003) https://doi.org/10.1063/1.1576911

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Room-temperature operation of an InAs–GaAs–AlAs quantum-cascade laser

D. A. Carder; L. R. Wilson; R. P. Green; J. W. Cockburn; M. Hopkinson; M. J. Steer; R. Airey; G. Hill

Appl. Phys. Lett. 82, 3409–3411 (2003) https://doi.org/10.1063/1.1576908

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Reversible and bistable terahertz radiation from magnetoresistive $\Pr_{0.7} {Ca}_{0.3} {MnO}_{3}$ thin films

Noriaki Kida; Masayoshi Tonouchi

Appl. Phys. Lett. 82, 3412–3414 (2003) https://doi.org/10.1063/1.1575507

Abstract

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Strong in-plane polarized intraband absorption in vertically aligned InGaAs/GaAs quantum dots

A. M. Adawi; E. A. Zibik; L. R. Wilson; A. Lemaître; J. W. Cockburn; M. S. Skolnick; M. Hopkinson; G. Hill; S. L. Liew; A. G. Cullis

Appl. Phys. Lett. 82, 3415–3417 (2003) https://doi.org/10.1063/1.1575931

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Midinfrared intersubband absorption in strain-compensated InGaP/InGaAs superlattices on (001) GaAs

M. P. Semtsiv; G. G. Tarasov; W. T. Masselink; H. Kissel; M. Woerner

Appl. Phys. Lett. 82, 3418–3420 (2003) https://doi.org/10.1063/1.1573368

Abstract

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A method to extract quantitative information in analyzer-based x-ray phase contrast imaging

E. Pagot; P. Cloetens; S. Fiedler; A. Bravin; P. Coan; J. Baruchel; J. Härtwig; W. Thomlinson

Appl. Phys. Lett. 82, 3421–3423 (2003) https://doi.org/10.1063/1.1575508

Abstract

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Compositionally-tuned epitaxial cubic ${Mg}_{x} {Zn}_{1−x} O$ on Si(100) for deep ultraviolet photodetectors

W. Yang; S. S. Hullavarad; B. Nagaraj; I. Takeuchi; R. P. Sharma; T. Venkatesan; R. D. Vispute; H. Shen

Appl. Phys. Lett. 82, 3424–3426 (2003) https://doi.org/10.1063/1.1576309

Abstract

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Impact of stress on oxygen vacancy ordering in epitaxial $({La}_{0.5} {Sr}_{0.5}) {CoO}_{3−∂}$ thin films

Dmitri O. Klenov; Wolfgang Donner; Brendan Foran; Susanne Stemmer

Appl. Phys. Lett. 82, 3427–3429 (2003) https://doi.org/10.1063/1.1575503

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In situ photoemission characterization of terminating-layer-controlled ${La}_{0.6} {Sr}_{0.4} {MnO}_{3}$ thin films

H. Kumigashira; K. Horiba; H. Ohguchi; K. Ono; M. Oshima; N. Nakagawa; M. Lippmaa; M. Kawasaki; H. Koinuma

Appl. Phys. Lett. 82, 3430–3432 (2003) https://doi.org/10.1063/1.1575932

Abstract

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Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy

J. Oila; J. Kivioja; V. Ranki; K. Saarinen; D. C. Look; R. J. Molnar; S. S. Park; S. K. Lee; J. Y. Han

Appl. Phys. Lett. 82, 3433–3435 (2003) https://doi.org/10.1063/1.1569414

Abstract

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${Er}^{3+}$ photoluminescence from Er-doped amorphous ${SiO}_{x}$ films prepared by pulsed laser deposition at room temperature: The effects of oxygen concentration

Jeong Sook Ha; Chang Hyun Bae; Sang Hwan Nam; Seung Min Park; Young Rae Jang; Keon Ho Yoo; Kyoungwan Park

Appl. Phys. Lett. 82, 3436–3438 (2003) https://doi.org/10.1063/1.1573335

Abstract

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Nonlithographic epitaxial ${Sn}_{x} {Ge}_{1−x}$ dense nanowire arrays grown on Ge(001)

Regina Ragan; Channing C. Ahn; Harry A. Atwater

Appl. Phys. Lett. 82, 3439–3441 (2003) https://doi.org/10.1063/1.1563834

Abstract

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Effect of ${Al}_{2} O_{3}$ capping layer on suppression of interfacial ${SiO}_{2}$ growth in ${HfO}_{2} / ultrathin$ ${SiO}_{2} / Si(001)$ structure

Manisha Kundu; Noriyuki Miyata; Toshihide Nabatame; Tsuyoshi Horikawa; Masakazu Ichikawa; Akira Toriumi

Appl. Phys. Lett. 82, 3442–3444 (2003) https://doi.org/10.1063/1.1576293

Abstract

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Erbium–thulium interaction in broadband infrared luminescent silicon-rich silicon oxide

Se-Young Seo; Jung H. Shin; Byeong-Soo Bae; Namkyoo Park; J. J. Penninkhof; A. Polman

Appl. Phys. Lett. 82, 3445–3447 (2003) https://doi.org/10.1063/1.1577217

Abstract

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Optical properties of the isoelectronic trap Hg in ZnO

Th. Agne; M. Dietrich; J. Hamann; S. Lany; H. Wolf; Th. Wichert; ISOLDE Collaboration

Appl. Phys. Lett. 82, 3448–3450 (2003) https://doi.org/10.1063/1.1576912

Abstract

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Interplay between the growth temperature, microstructure, and optical properties of GaInNAs quantum wells

J.-M. Chauveau; A. Trampert; K. H. Ploog; M.-A. Pinault; E. Tournié

Appl. Phys. Lett. 82, 3451–3453 (2003) https://doi.org/10.1063/1.1577393

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Continuous formation and faceting of SiGe islands on Si(100)

P. Sutter; P. Zahl; E. Sutter

Appl. Phys. Lett. 82, 3454–3456 (2003) https://doi.org/10.1063/1.1577386

Abstract

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Contributions from gallium vacancies and carbon-related defects to the “yellow luminescence” in GaN

R. Armitage; William Hong; Qing Yang; H. Feick; J. Gebauer; E. R. Weber; S. Hautakangas; K. Saarinen

Appl. Phys. Lett. 82, 3457–3459 (2003) https://doi.org/10.1063/1.1578169

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Structural and optical properties of epitaxial ${BaTiO}_{3}$ thin films grown on ${GdScO}_{3} (110)$

J. Schubert; O. Trithaveesak; A. Petraru; C. L. Jia; R. Uecker; P. Reiche; D. G. Schlom

Appl. Phys. Lett. 82, 3460–3462 (2003) https://doi.org/10.1063/1.1575935

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Far-infrared-magneto-optic ellipsometry characterization of free-charge-carrier properties in highly disordered $n$ -type ${Al}_{0.19} {Ga}_{0.33} {In}_{0.48} P$

T. Hofmann; M. Schubert; C. M. Herzinger; I. Pietzonka

Appl. Phys. Lett. 82, 3463–3465 (2003) https://doi.org/10.1063/1.1578162

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Pulsed-laser-deposited ultraviolet-emitting SrS:Te thin films

J. M. Fitz-Gerald; J. Hoekstra; P. D. Rack; J. D. Fowlkes

Appl. Phys. Lett. 82, 3466–3468 (2003) https://doi.org/10.1063/1.1571660

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Fluorine-enhanced boron diffusion in amorphous silicon

J. M. Jacques; L. S. Robertson; K. S. Jones; M. E. Law; Mike Rendon; Joe Bennett

Appl. Phys. Lett. 82, 3469–3471 (2003) https://doi.org/10.1063/1.1576508

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Atomic-layer doping in Si by alternately supplied ${NH}_{3}$ and ${SiH}_{4}$

Youngcheon Jeong; Masao Sakuraba; Junichi Murota

Appl. Phys. Lett. 82, 3472–3474 (2003) https://doi.org/10.1063/1.1576910

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MAGNETISM AND SUPERCONDUCTIVITY

Magnetic anisotropy and thermal stability study on FePt nanoparticle assembly

X. W. Wu; K. Y. Guslienko; R. W. Chantrell; D. Weller

Appl. Phys. Lett. 82, 3475–3477 (2003) https://doi.org/10.1063/1.1576501

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Magnetic behavior of nanoparticles in patterned thin films

J. Escrig; P. Landeros; J. C. Retamal; D. Altbir; J. d’Albuquerque e Castro

Appl. Phys. Lett. 82, 3478–3480 (2003) https://doi.org/10.1063/1.1573333

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Thermal effect on the field-dependent refractive index of the magnetic fluid film

Y. F. Chen; S. Y. Yang; W. S. Tse; H. E. Horng; Chin-Yih Hong; H. C. Yang

Appl. Phys. Lett. 82, 3481–3483 (2003) https://doi.org/10.1063/1.1576292

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Hybridization reduction of the magnetization for N-doped FeCo superlattices

Miyoung Kim; A. J. Freeman

Appl. Phys. Lett. 82, 3484–3486 (2003) https://doi.org/10.1063/1.1576917

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Monolithic low-transition-temperature superconducting magnetometers for high resolution imaging magnetic fields of room temperature samples

F. Baudenbacher; L. E. Fong; J. R. Holzer; M. Radparvar

Appl. Phys. Lett. 82, 3487–3489 (2003) https://doi.org/10.1063/1.1572968

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Laser ablation of Co:ZnO films deposited from Zn and Co metal targets on (0001) ${Al}_{2} O_{3}$ substrates

W. Prellier; A. Fouchet; B. Mercey; Ch. Simon; B. Raveau

Appl. Phys. Lett. 82, 3490–3492 (2003) https://doi.org/10.1063/1.1578183

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DIELECTRICS AND FERROELECTRICITY

Domain structure study of ${SrBi}_{2} {Ta}_{2} O_{9}$ ferroelectric thin films by scanning capacitance microscopy

Ching-Chich Leu; Chih-Yuan Chen; Chao-Hsin Chien; Mao-Nan Chang; Fan-Yi Hsu; Chen-Ti Hu

Appl. Phys. Lett. 82, 3493–3495 (2003) https://doi.org/10.1063/1.1576308

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Ferroelectric behavior of orientation-controlled ${PbBi}_{4} {Ti}_{4} O_{15}$ thin films

Wen Xu Xianyu; Wan In Lee; Taegyung Ko; June Key Lee

Appl. Phys. Lett. 82, 3496–3498 (2003) https://doi.org/10.1063/1.1576307

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Dependence of the pyroelectric response on internal stresses in ferroelectric thin films

Z.-G. Ban; S. P. Alpay

Appl. Phys. Lett. 82, 3499–3501 (2003) https://doi.org/10.1063/1.1576503

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High-dielectric-constant all-polymer percolative composites

Cheng Huang; Q. M. Zhang; Ji Su

Appl. Phys. Lett. 82, 3502–3504 (2003) https://doi.org/10.1063/1.1575505

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Kelvin probe force microscopy study of ${SrBi}_{2} {Ta}_{2} O_{9}$ and ${PbZr}_{0.53} {Ti}_{0.47} O_{3}$ thin films for high-density nonvolatile storage devices

J. Y. Son; S. H. Bang; J. H. Cho

Appl. Phys. Lett. 82, 3505–3507 (2003) https://doi.org/10.1063/1.1576916

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Electrical properties of ${HfO}_{2}$ deposited via atomic layer deposition using $Hf ({NO}_{3})_{4}$ and $H_{2} O$

J. F. Conley, Jr.; Y. Ono; R. Solanki; G. Stecker; W. Zhuang

Appl. Phys. Lett. 82, 3508–3510 (2003) https://doi.org/10.1063/1.1575934

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NANOSCALE SCIENCE AND DESIGN

${Eu}^{3+}$ ion as fluorescent probe for detecting the surface effect in nanocrystals

Chun-Hua Yan; Ling-Dong Sun; Chun-Sheng Liao; Ying-Xin Zhang; Yi-Qiang Lu; Shi-Hua Huang; Shao-Zhe Lü

Appl. Phys. Lett. 82, 3511–3513 (2003) https://doi.org/10.1063/1.1575504

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Direct fabrication of nanowires in an electron microscope

N. Silvis-Cividjian; C. W. Hagen; P. Kruit; M. A. J. v.d. Stam; H. B. Groen

Appl. Phys. Lett. 82, 3514–3516 (2003) https://doi.org/10.1063/1.1575506

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Self-assembling of Ge on finite Si(001) areas comparable with the island size

L. Vescan; T. Stoica; B. Holländer; A. Nassiopoulou; A. Olzierski; I. Raptis; E. Sutter

Appl. Phys. Lett. 82, 3517–3519 (2003) https://doi.org/10.1063/1.1576498

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Effect of length and spacing of vertically aligned carbon nanotubes on field emission properties

S. H. Jo; Y. Tu; Z. P. Huang; D. L. Carnahan; D. Z. Wang; Z. F. Ren

Appl. Phys. Lett. 82, 3520–3522 (2003) https://doi.org/10.1063/1.1576310

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Spatial ordering in InP/InGaP nanostructures

J. R. R. Bortoleto; H. R. Gutiérrez; M. A. Cotta; J. Bettini; L. P. Cardoso; M. M. G. de Carvalho

Appl. Phys. Lett. 82, 3523–3525 (2003) https://doi.org/10.1063/1.1572553

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Diamond-like carbon nanocomposite films

Liang-Yih Chen; Franklin Chau-Nan Hong

Appl. Phys. Lett. 82, 3526–3528 (2003) https://doi.org/10.1063/1.1576909

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Microstructuring by printing and laser curing of nanoparticle solutions

N. R. Bieri; J. Chung; S. E. Haferl; D. Poulikakos; C. P. Grigoropoulos

Appl. Phys. Lett. 82, 3529–3531 (2003) https://doi.org/10.1063/1.1575502

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Damping of micromechanical structures by paramagnetic relaxation

J. G. E. Harris; R. Knobel; K. D. Maranowski; A. C. Gossard; N. Samarth; D. D. Awschalom

Appl. Phys. Lett. 82, 3532–3534 (2003) https://doi.org/10.1063/1.1577385

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Coulomb blockade devices of Co dot arrays on tungsten-nanowire templates fabricated by using only a thin film technique

Yun-Hi Lee; Dong-Ho Kim; Kyung-Sik Shin; Chang-Hoon Choi; Yoon-Taek Jang; Byeong-Kwon Ju

Appl. Phys. Lett. 82, 3535–3537 (2003) https://doi.org/10.1063/1.1571978

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Integrated piezoresistive sensors for atomic force-guided scanning Hall probe microscopy

A. J. Brook; S. J. Bending; J. Pinto; A. Oral; D. Ritchie; H. Beere; M. Henini; A. Springthorpe

Appl. Phys. Lett. 82, 3538–3540 (2003) https://doi.org/10.1063/1.1576914

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Easy method to adjust the angle of the carbon nanotube probe of an atomic force microscope

Y. C. Chang; D. C. Wang; C. S. Chang; Tien T. Tsong

Appl. Phys. Lett. 82, 3541–3543 (2003) https://doi.org/10.1063/1.1577388

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DEVICE PHYSICS

Surface modes for near field thermophotovoltaics

Arvind Narayanaswamy; Gang Chen

Appl. Phys. Lett. 82, 3544–3546 (2003) https://doi.org/10.1063/1.1575936

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Observation of magnetic-field-enhanced source current of accumulated $p$ -channel metal-oxide-semiconductor field-effect transistors

F. A. Baron; Y. Zhang; K. L. Wang

Appl. Phys. Lett. 82, 3547–3549 (2003) https://doi.org/10.1063/1.1576295

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A completely flexible organic transistor obtained by a one-mask photolithographic process

Annalisa Bonfiglio; Fulvia Mameli; Ornella Sanna

Appl. Phys. Lett. 82, 3550–3552 (2003) https://doi.org/10.1063/1.1577216

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An accumulative x-ray streak camera with sub-600-fs temporal resolution and 50-fs timing jitter

Jinyuan Liu; Jin Wang; Bing Shan; Chun Wang; Zenghu Chang

Appl. Phys. Lett. 82, 3553–3555 (2003) https://doi.org/10.1063/1.1577213

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Improvement of $n- GaN$ Schottky diode rectifying characteristics using KOH etching

J. Spradlin; S. Dogan; M. Mikkelson; D. Huang; L. He; D. Johnstone; H. Morkoç; R. J. Molnar

Appl. Phys. Lett. 82, 3556–3558 (2003) https://doi.org/10.1063/1.1572532

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Band bending independent of surface passivation in $ZnO/CdS/Cu (In,Ga)(S,Se)_{2}$ heterojunctions and $Cr/Cu (In,Ga)(S,Se)_{2}$ Schottky contacts

C. Deibel; V. Dyakonov; J. Parisi

Appl. Phys. Lett. 82, 3559–3561 (2003) https://doi.org/10.1063/1.1576500

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APPLIED BIOPHYSICS

Microcantilever resonance-based DNA detection with nanoparticle probes

Ming Su; Shuyou Li; Vinayak P. Dravid

Appl. Phys. Lett. 82, 3562–3564 (2003) https://doi.org/10.1063/1.1576915

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INTERDISCIPLINARY AND GENERAL PHYSICS

A field-emission display with a self-focus cathode electrode

Y. S. Choi; Y. S. Cho; J. H. Kang; Y. J. Kim; I. H. Kim; S. H. Park; H. W. Lee; S. Y. Hwang; S. J. Lee; C. G. Lee; T. S. Oh; J. S. Choi; S. K. Kang; J. M. Kim

Appl. Phys. Lett. 82, 3565–3567 (2003) https://doi.org/10.1063/1.1575937

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COMMENTS

Comment on “Laser-like mechanoluminescence in ZnMnTe-diluted magnetic semiconductor” [Appl. Phys. Lett. 81, 460 (2002)]

Chang Q. Sun; S. Li; B. K. Tay

Appl. Phys. Lett. 82, 3568–3569 (2003) https://doi.org/10.1063/1.1576890

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Comment on “Strong wave-vector filtering and nearly 100% spin polarization through resonant tunneling antisymmetrical magnetic structure” [Appl. Phys. Lett. 81, 691 (2002)]

G. Papp; F. M. Peeters

Appl. Phys. Lett. 82, 3570 (2003) https://doi.org/10.1063/1.1577821

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