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Volume 82, Issue 18

5 May 2003

Applied Physics Letters Cover Image for Volume 82, Issue 18

ISSN 0003-6951

EISSN 1077-3118

In this Issue

LASERS, OPTICS, AND OPTOELECTRONICS
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
ELECTRONIC TRANSPORT AND SEMICONDUCTORS
MAGNETISM AND SUPERCONDUCTIVITY
DIELECTRICS AND FERROELECTRICITY
NANOSCALE SCIENCE AND DESIGN
DEVICE PHYSICS
APPLIED BIOPHYSICS
INTERDISCIPLINARY AND GENERAL PHYSICS

LASERS, OPTICS, AND OPTOELECTRONICS

Narrow-band polarized light emission from organic microcavity fabricated by sol-gel technique

Qinghai Song; Liying Liu; Tao Ling; Lei Xu; Wencheng Wang

Appl. Phys. Lett. 82, 2939–2941 (2003) https://doi.org/10.1063/1.1571955

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Tunable distributed feedback laser with photonic crystal mirrors

S. Mahnkopf; M. Kamp; A. Forchel; R. März

Appl. Phys. Lett. 82, 2942–2944 (2003) https://doi.org/10.1063/1.1571662

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Normal-mode anisotropic liquid-crystal gels

Yun-Hsing Fan; Hongwen Ren; Shin-Tson Wu

Appl. Phys. Lett. 82, 2945–2947 (2003) https://doi.org/10.1063/1.1571663

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Time evolution of depletion region in poled silica

A. L. C. Triques; I. C. S. Carvalho; M. F. Moreira; H. R. Carvalho; R. Fischer; B. Lesche; W. Margulis

Appl. Phys. Lett. 82, 2948–2950 (2003) https://doi.org/10.1063/1.1572472

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Lasing characteristics and modal gain of a lateral-junction InGaAs/GaAs edge-emitting laser diode grown on a patterned GaAs (311) A-oriented substrate

José M. Zanardi Ocampo; Pablo O. Vaccaro; Shanmugam Saravanan; Kazuyoshi Kubota; Tahito Aida

Appl. Phys. Lett. 82, 2951–2953 (2003) https://doi.org/10.1063/1.1570925

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Third-order nonlinearities in silicon at telecom wavelengths

M. Dinu; F. Quochi; H. Garcia

Appl. Phys. Lett. 82, 2954–2956 (2003) https://doi.org/10.1063/1.1571665

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Demonstration of a nanophotonic switching operation by optical near-field energy transfer

Tadashi Kawazoe; Kiyoshi Kobayashi; Suguru Sangu; Motoichi Ohtsu

Appl. Phys. Lett. 82, 2957–2959 (2003) https://doi.org/10.1063/1.1571977

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Room-temperature electro-optic up-conversion via internal photoemission

K. J. Russell; Ian Appelbaum; H. Temkin; C. H. Perry; V. Narayanamurti; M. P. Hanson; A. C. Gossard

Appl. Phys. Lett. 82, 2960–2962 (2003) https://doi.org/10.1063/1.1571981

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Single spatial mode selection in a layered square microcavity laser

Hee-Jong Moon; Kyungwon An; Jai-Hyung Lee

Appl. Phys. Lett. 82, 2963–2965 (2003) https://doi.org/10.1063/1.1572966

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Dry-etching method for fabricating photonic-crystal waveguides in nonlinear-optical polymers

Shin-ichiro Inoue; Kotaro Kajikawa; Yoshinobu Aoyagi

Appl. Phys. Lett. 82, 2966–2968 (2003) https://doi.org/10.1063/1.1572962

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Stacking and translation of microscopic particles by means of $2×2$ beams emitted from a vertical-cavity surface-emitting laser array

Fumika Sumiyama; Yusuke Ogura; Jun Tanida

Appl. Phys. Lett. 82, 2969–2971 (2003) https://doi.org/10.1063/1.1570939

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Polarized Raman scattering of impurity modes in beryllium-doped cubic boron nitride single crystals

Kenji Watanabe; Takashi Taniguchi; Hisao Kanda; Elena M. Shishonok

Appl. Phys. Lett. 82, 2972–2974 (2003) https://doi.org/10.1063/1.1569989

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White light emission from radical carbonyl-terminations in ${Al}_{2} O_{3} - {SiO}_{2}$ porous glasses with high luminescence quantum efficiencies

Tomokatsu Hayakawa; Ai Hiramitsu; Masayuki Nogami

Appl. Phys. Lett. 82, 2975–2977 (2003) https://doi.org/10.1063/1.1569038

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Growth and physical properties of ${Ga}_{2} O_{3}$ thin films on GaAs(001) substrate by molecular-beam epitaxy

Z. Yu; C. D. Overgaard; R. Droopad; M. Passlack; J. K. Abrokwah

Appl. Phys. Lett. 82, 2978–2980 (2003) https://doi.org/10.1063/1.1572478

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Identification of hexagonal polycrystal in epitaxially grown InN by synchrotron x-ray diffraction and near-edge x-ray absorption fine structure spectroscopy

Ik Jae Lee; Hyun-Joon Shin; Suk Sang Chang; Min Kyu Lee; Hyung-Kook Kim

Appl. Phys. Lett. 82, 2981–2983 (2003) https://doi.org/10.1063/1.1572475

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A valence electron concentration criterion for glass-formation ability of metallic liquids

Q. Jiang; B. Q. Chi; J. C. Li

Appl. Phys. Lett. 82, 2984–2986 (2003) https://doi.org/10.1063/1.1571984

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Carrier lifetime studies of deeply penetrating defects in self-ion implanted silicon

D. H. Macdonald; H. Maeckel; S. Doshi; W. Brendle; A. Cuevas; J. S. Williams; M. J. Conway

Appl. Phys. Lett. 82, 2987–2989 (2003) https://doi.org/10.1063/1.1572469

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Influence of MgO substrate miscut on domain structure of pulsed laser deposited ${Sr}_{x} {Ba}_{1−x} {Nb}_{2} O_{6}$ as characterized by x-ray diffraction and spectroscopic ellipsometry

C. M. Rouleau; G. E. Jellison, Jr.; D. B. Beach

Appl. Phys. Lett. 82, 2990–2992 (2003) https://doi.org/10.1063/1.1572464

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Dielectric function of nanocrystalline silicon with few nanometers (<3 nm) grain size

Maria Losurdo; Maria Michela Giangregorio; Pio Capezzuto; Giovanni Bruno; M. F. Cerqueira; E. Alves; M. Stepikhova

Appl. Phys. Lett. 82, 2993–2995 (2003) https://doi.org/10.1063/1.1569052

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Very efficient light emission from bulk crystalline silicon

Thorsten Trupke; Jianhua Zhao; Aihua Wang; Richard Corkish; Martin A. Green

Appl. Phys. Lett. 82, 2996–2998 (2003) https://doi.org/10.1063/1.1572473

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CuAu-I-type ordered structures in ${In}_{x} {Al}_{1−x} As$ epilayers grown on (001) InP substrates

Ho Seong Lee; Jeong Yong Lee

Appl. Phys. Lett. 82, 2999–3001 (2003) https://doi.org/10.1063/1.1572535

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Observation of a hydrogenic donor in the luminescence of electron-irradiated GaN

Qing Yang; Henning Feick; Eicke R. Weber

Appl. Phys. Lett. 82, 3002–3004 (2003) https://doi.org/10.1063/1.1570943

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Boundary migration in Zn bicrystal induced by a high magnetic field

A. D. Sheikh-Ali; D. A. Molodov; H. Garmestani

Appl. Phys. Lett. 82, 3005–3007 (2003) https://doi.org/10.1063/1.1572536

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Improved photoluminescence of InGaAsN–(In)GaAsP quantum well by organometallic vapor phase epitaxy using growth pause annealing

Nelson Tansu; Jeng-Ya Yeh; Luke J. Mawst

Appl. Phys. Lett. 82, 3008–3010 (2003) https://doi.org/10.1063/1.1572470

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Selective oxidation behavior of W/WN/polycrystalline- ${Si}_{1−x} {Ge}_{x}$ gate structure in $H_{2} O + H_{2}$ ambient

Tae-Hang Ahn; In-Seok Yeo; Joong-Jung Kim; Jae-Sung Roh; Jung-Ho Lee

Appl. Phys. Lett. 82, 3011–3013 (2003) https://doi.org/10.1063/1.1572961

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Dependence of morphology on miscut angle for Si(111) etched in ${NH}_{4} F$

Joseph Fu; Hui Zhou; John Kramar; Richard Silver; Satoshi Gonda

Appl. Phys. Lett. 82, 3014–3016 (2003) https://doi.org/10.1063/1.1569426

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Influences of central metal ions on the electroluminescene and transport properties of tris-(8-hydroxyquinoline) metal chelates

B. J. Chen; X. W. Sun; Y. K. Li

Appl. Phys. Lett. 82, 3017–3019 (2003) https://doi.org/10.1063/1.1572474

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Effect of low-temperature annealing on (Ga,Mn)As trilayer structures

D. Chiba; K. Takamura; F. Matsukura; H. Ohno

Appl. Phys. Lett. 82, 3020–3022 (2003) https://doi.org/10.1063/1.1571666

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Absence of carrier recombination associated with the defect pool model in intrinsic amorphous silicon layers: Evidence from current–voltage characteristics on p–i–n and n–i–p solar cells

J. Deng; J. M. Pearce; R. J. Koval; V. Vlahos; R. W. Collins; C. R. Wronski

Appl. Phys. Lett. 82, 3023–3025 (2003) https://doi.org/10.1063/1.1571985

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Highly stable and textured hydrogenated ZnO thin films

Seung Yeop Myong; Koeng Su Lim

Appl. Phys. Lett. 82, 3026–3028 (2003) https://doi.org/10.1063/1.1571651

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Hydrogen density-of-states in polycrystalline silicon

N. H. Nickel; K. Brendel

Appl. Phys. Lett. 82, 3029–3031 (2003) https://doi.org/10.1063/1.1570924

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Nanometer-scale switches using copper sulfide

T. Sakamoto; H. Sunamura; H. Kawaura; T. Hasegawa; T. Nakayama; M. Aono

Appl. Phys. Lett. 82, 3032–3034 (2003) https://doi.org/10.1063/1.1572964

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Electric-field-induced heating and energy relaxation in GaN

T. A. Eckhause; Ö. Süzer; Ç. Kurdak; F. Yun; H. Morkoç

Appl. Phys. Lett. 82, 3035–3037 (2003) https://doi.org/10.1063/1.1571982

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Influence of in situ applied stress during thermal oxidation of (111)Si on $P_{b}$ interface defects

A. Stesmans; D. Pierreux; R. J. Jaccodine; M.-T. Lin; T. J. Delph

Appl. Phys. Lett. 82, 3038–3040 (2003) https://doi.org/10.1063/1.1555277

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Enhanced p-type conduction in GaN and AlGaN by Mg-δ-doping

M. L. Nakarmi; K. H. Kim; J. Li; J. Y. Lin; H. X. Jiang

Appl. Phys. Lett. 82, 3041–3043 (2003) https://doi.org/10.1063/1.1559444

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MAGNETISM AND SUPERCONDUCTIVITY

Isothermal tuning of exchange bias using pulsed fields

J. Nogués; J. Sort; S. Suriñach; J. S. Muñoz; M. D. Baró; J. F. Bobo; U. Lüders; E. Haanappel; M. R. Fitzsimmons; A. Hoffmann; J. W. Cai

Appl. Phys. Lett. 82, 3044–3046 (2003) https://doi.org/10.1063/1.1565711

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Synthesis, characterization, and modeling of high quality ferromagnetic Cr-doped AlN thin films

Stephen Y. Wu; H. X. Liu; Lin Gu; R. K. Singh; L. Budd; M. van Schilfgaarde; M. R. McCartney; David J. Smith; N. Newman

Appl. Phys. Lett. 82, 3047–3049 (2003) https://doi.org/10.1063/1.1570521

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Small-angle neutron scattering measurements of magnetic cluster sizes in magnetic recording disks

Michael F. Toney; Kurt A. Rubin; Sung-Min Choi; Charles J. Glinka

Appl. Phys. Lett. 82, 3050–3052 (2003) https://doi.org/10.1063/1.1571652

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Giant-magnetoimpedance-based sensitive element as a model for biosensors

G. V. Kurlyandskaya; M. L. Sánchez; B. Hernando; V. M. Prida; P. Gorria; M. Tejedor

Appl. Phys. Lett. 82, 3053–3055 (2003) https://doi.org/10.1063/1.1571957

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Nanostructure and magnetic properties of BN-encapsulated Fe(B) and ${Fe}_{2} N$ nanoparticles prepared by dual ion-beam sputtering

D. Babonneau; M. Jaouen; M.-F. Denanot; P. Guérin; F. Petroff

Appl. Phys. Lett. 82, 3056–3058 (2003) https://doi.org/10.1063/1.1571230

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A stabilizer for superconducting quantum interference device gradiometers for operation in lightly shielded environments

Koichi Yokosawa; Akihiko Kandori; Tsuyoshi Miyashita; Daisuke Suzuki; Keiji Tsukada; Akira Tsukamoto

Appl. Phys. Lett. 82, 3059–3061 (2003) https://doi.org/10.1063/1.1571956

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Element-specific magnetic properties of the epitaxial NiFe/Cr/NiFe trilayers

I. F. Lee; M. Y. Shen; Y. Y. Lay; J. C. Jan; J. W. Chiou; H. M. Tsai; W. F. Pong; M.-H. Tsai; H. H. Hsieh; H.-J. Lin; J. F. Lee; C. A. Ku; J. C. A. Huang

Appl. Phys. Lett. 82, 3062–3064 (2003) https://doi.org/10.1063/1.1563743

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Anisotropy, damping, and coherence of magnetization dynamics in a 10 μm square ${Ni}_{81} {Fe}_{19}$ element

A. Barman; V. V. Kruglyak; R. J. Hicken; A. Kundrotaite; M. Rahman

Appl. Phys. Lett. 82, 3065–3067 (2003) https://doi.org/10.1063/1.1572969

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DIELECTRICS AND FERROELECTRICITY

Rubbing-induced polar ordering in nylon-11

Seok-Cheol Hong; Chun Zhang; Y. R. Shen

Appl. Phys. Lett. 82, 3068–3070 (2003) https://doi.org/10.1063/1.1570937

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Spatial inhomogeneity of imprint and switching behavior in ferroelectric capacitors

A. Gruverman; B. J. Rodriguez; A. I. Kingon; R. J. Nemanich; J. S. Cross; M. Tsukada

Appl. Phys. Lett. 82, 3071–3073 (2003) https://doi.org/10.1063/1.1570942

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Full-relativistic calculations of the ${SrTiO}_{3}$ carrier effective masses and complex dielectric function

M. Marques; L. K. Teles; V. Anjos; L. M. R. Scolfaro; J. R. Leite; V. N. Freire; G. A. Farias; E. F. da Silva, Jr.

Appl. Phys. Lett. 82, 3074–3076 (2003) https://doi.org/10.1063/1.1570922

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Transport properties of ${LaTiO}_{3+x}$ films and heterostructures

A. Schmehl; F. Lichtenberg; H. Bielefeldt; J. Mannhart; D. G. Schlom

Appl. Phys. Lett. 82, 3077–3079 (2003) https://doi.org/10.1063/1.1572960

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NANOSCALE SCIENCE AND DESIGN

Surface structures of a Co-doped anatase ${TiO}_{2}$ (001) film investigated by scanning tunneling microscopy

J. S. Yang; D. H. Kim; S. D. Bu; T. W. Noh; S. H. Phark; Z. G. Khim; I. W. Lyo; S.-J. Oh

Appl. Phys. Lett. 82, 3080–3082 (2003) https://doi.org/10.1063/1.1571983

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Quantum dot amplifiers with high output power and low noise

Tommy W. Berg; Jesper Mørk

Appl. Phys. Lett. 82, 3083–3085 (2003) https://doi.org/10.1063/1.1571226

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Measuring electrical current during scanning probe oxidation

F. Pérez-Murano; C. Martı́n; N. Barniol; H. Kuramochi; H. Yokoyama; J. A. Dagata

Appl. Phys. Lett. 82, 3086–3088 (2003) https://doi.org/10.1063/1.1572480

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Palladium nanoparticle arrays using template-assisted electrodeposition

D. Bera; S. C. Kuiry; S. Patil; S. Seal

Appl. Phys. Lett. 82, 3089–3091 (2003) https://doi.org/10.1063/1.1572465

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Characteristics of a field-effect transistor with stacked InAs quantum dots

T. H. Wang; H. W. Li; J. M. Zhou

Appl. Phys. Lett. 82, 3092–3094 (2003) https://doi.org/10.1063/1.1572468

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Optimized surface-enhanced Raman scattering on gold nanoparticle arrays

N. Félidj; J. Aubard; G. Lévi; J. R. Krenn; A. Hohenau; G. Schider; A. Leitner; F. R. Aussenegg

Appl. Phys. Lett. 82, 3095–3097 (2003) https://doi.org/10.1063/1.1571979

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Temperature dependence of resonant Raman scattering in double-wall carbon nanotubes

Lijie Ci; Zhenping Zhou; Li Song; Xiaoqin Yan; Dongfang Liu; Huajun Yuan; Yan Gao; Jianxiong Wang; Lifeng Liu; Weiya Zhou; Gang Wang; Sishen Xie

Appl. Phys. Lett. 82, 3098–3100 (2003) https://doi.org/10.1063/1.1572959

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DEVICE PHYSICS

Organic donor/acceptor photovoltaics: The role of $C_{60} / metal$ interfaces

Christian Melzer; Victor V. Krasnikov; Georges Hadziioannou

Appl. Phys. Lett. 82, 3101–3103 (2003) https://doi.org/10.1063/1.1570936

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Role of ultrathin ${Alq}_{3}$ and LiF layers in conjugated polymer light-emitting diodes

X. Y. Deng; S. W. Tong; L. S. Hung; Y. Q. Mo; Y. Cao

Appl. Phys. Lett. 82, 3104–3106 (2003) https://doi.org/10.1063/1.1571654

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4H–SiC photoconductive switching devices for use in high-power applications

S. Doǧan; A. Teke; D. Huang; H. Morkoç; C. B. Roberts; J. Parish; B. Ganguly; M. Smith; R. E. Myers; S. E. Saddow

Appl. Phys. Lett. 82, 3107–3109 (2003) https://doi.org/10.1063/1.1571667

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Temperature dependence of gate–leakage current in AlGaN/GaN high-electron-mobility transistors

S. Arulkumaran; T. Egawa; H. Ishikawa; T. Jimbo

Appl. Phys. Lett. 82, 3110–3112 (2003) https://doi.org/10.1063/1.1571655

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Influence of interfacial nitrogen on edge charge trapping at the interface of gate oxide/drain extension in metal–oxide–semiconductor transistors

T. P. Chen; J. Y. Huang; M. S. Tse; S. S. Tan; C. H. Ang; S. Fung

Appl. Phys. Lett. 82, 3113–3115 (2003) https://doi.org/10.1063/1.1572471

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Photomixing and photoconductor measurements on ErAs/InGaAs at 1.55 μm

M. Sukhotin; E. R. Brown; A. C. Gossard; D. Driscoll; M. Hanson; P. Maker; R. Muller

Appl. Phys. Lett. 82, 3116–3118 (2003) https://doi.org/10.1063/1.1567459

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Surface-scattering effects in polycrystalline silicon thin-film transistors

A. Valletta; L. Mariucci; G. Fortunato; S. D. Brotherton

Appl. Phys. Lett. 82, 3119–3121 (2003) https://doi.org/10.1063/1.1571960

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APPLIED BIOPHYSICS

Fabrication of biological microarrays using microcantilevers

P. Belaubre; M. Guirardel; G. Garcia; J. B. Pourciel; V. Leberre; A. Dagkessamanskaia; E. Trévisiol; J. M. François; C. Bergaud

Appl. Phys. Lett. 82, 3122–3124 (2003) https://doi.org/10.1063/1.1565685

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Laser-diode-stimulated emission depletion microscopy

V. Westphal; C. M. Blanca; M. Dyba; L. Kastrup; S. W. Hell

Appl. Phys. Lett. 82, 3125–3127 (2003) https://doi.org/10.1063/1.1571656

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INTERDISCIPLINARY AND GENERAL PHYSICS

Atoms on demand: Fast, deterministic production of single Cr atoms

S. B. Hill; J. J. McClelland

Appl. Phys. Lett. 82, 3128–3130 (2003) https://doi.org/10.1063/1.1572539

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