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Issues
28 April 2003
ISSN 0003-6951
EISSN 1077-3118
In this Issue
LASERS, OPTICS, AND OPTOELECTRONICS
Three-level picture for chirp-dependent fluorescence yields under femtosecond optical pulse irradiation
Appl. Phys. Lett. 82, 2749–2751 (2003)
https://doi.org/10.1063/1.1571225
Multimode combined intense laser-induced electron acceleration and violent bunch compression
Appl. Phys. Lett. 82, 2752–2754 (2003)
https://doi.org/10.1063/1.1569417
Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm
Appl. Phys. Lett. 82, 2755–2757 (2003)
https://doi.org/10.1063/1.1570515
Multiphoton fabrication of periodic structures by multibeam interference of femtosecond pulses
Appl. Phys. Lett. 82, 2758–2760 (2003)
https://doi.org/10.1063/1.1569987
Increasing shear force microscopy scanning rate using active quality-factor control
Appl. Phys. Lett. 82, 2761–2763 (2003)
https://doi.org/10.1063/1.1571233
Efficient blue light-emitting diodes with InGaN/GaN triangular shaped multiple quantum wells
Appl. Phys. Lett. 82, 2764–2766 (2003)
https://doi.org/10.1063/1.1570511
Tunable photonic crystals fabricated in III-V semiconductor slab waveguides using infiltrated liquid crystals
Appl. Phys. Lett. 82, 2767–2769 (2003)
https://doi.org/10.1063/1.1570921
GaAs-based near-infrared omnidirectional reflector
Appl. Phys. Lett. 82, 2770–2772 (2003)
https://doi.org/10.1063/1.1569045
Semiconductor mirror for dynamic dispersion compensation
Appl. Phys. Lett. 82, 2773–2774 (2003)
https://doi.org/10.1063/1.1569990
Tuning of the blue emission from europium-doped alkaline earth chloroborate thin films activated in air
Appl. Phys. Lett. 82, 2778–2780 (2003)
https://doi.org/10.1063/1.1569048
PLASMAS AND ELECTRICAL DISCHARGES
Flat triode structure with a pulsed coplanar discharge channel representing similar features to a field-effect transistor
Appl. Phys. Lett. 82, 2781–2783 (2003)
https://doi.org/10.1063/1.1570510
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
Spectral dependence of the squared average optical transition matrix element associated with hydrogenated amorphous silicon
Appl. Phys. Lett. 82, 2784–2786 (2003)
https://doi.org/10.1063/1.1568148
Indirect excitation of in sol-gel hybrid films doped with an erbium complex
Appl. Phys. Lett. 82, 2787–2789 (2003)
https://doi.org/10.1063/1.1570919
Excellent ultrasonic absorption ability of carbon-nanotube-reinforced bulk metallic glass composites
Appl. Phys. Lett. 82, 2790–2792 (2003)
https://doi.org/10.1063/1.1570938
Multiple temperature regimes of radiative decay in CdSe nanocrystal quantum dots: Intrinsic limits to the dark-exciton lifetime
Appl. Phys. Lett. 82, 2793–2795 (2003)
https://doi.org/10.1063/1.1570923
Self-organized titanium oxide nanodot arrays by electrochemical anodization
Appl. Phys. Lett. 82, 2796–2798 (2003)
https://doi.org/10.1063/1.1571661
Magneto-optical investigations of single self-assembled InAs/InGaAlAs quantum dashes
Appl. Phys. Lett. 82, 2799–2801 (2003)
https://doi.org/10.1063/1.1570518
Proton-implantation-induced photoluminescence enhancement in self-assembled InAs/GaAs quantum dots
Appl. Phys. Lett. 82, 2802–2804 (2003)
https://doi.org/10.1063/1.1568547
Role of the host matrix in the carrier recombination of InGaAsN alloys
A. Vinattieri; D. Alderighi; M. Zamfirescu; M. Colocci; A. Polimeni; M. Capizzi; D. Gollub; M. Fischer; A. Forchel
Appl. Phys. Lett. 82, 2805–2807 (2003)
https://doi.org/10.1063/1.1569983
Percolation-based vibrational picture to estimate nonrandom N substitution in GaAsN alloys
Appl. Phys. Lett. 82, 2808–2810 (2003)
https://doi.org/10.1063/1.1566801
Microscopic superelastic behavior of a nickel-titanium alloy under complex loading conditions
Appl. Phys. Lett. 82, 2811–2813 (2003)
https://doi.org/10.1063/1.1569984
ELECTRONIC TRANSPORT AND SEMICONDUCTORS
p-type conductivity in wide-band-gap BaCuQF
Appl. Phys. Lett. 82, 2814–2816 (2003)
https://doi.org/10.1063/1.1571224
Investigation of degradation for ohmic performance of oxidized Au/Ni/Mg-doped GaN
Yow-Jon Lin; Zhen-Dao Li; Chou-Wei Hsu; Feng-Tso Chien; Ching-Ting Lee; Sheng-Tien Shao; Hsing-Cheng Chang
Appl. Phys. Lett. 82, 2817–2819 (2003)
https://doi.org/10.1063/1.1569991
Bound-exciton-induced current bistability in a silicon light-emitting diode
Appl. Phys. Lett. 82, 2823–2825 (2003)
https://doi.org/10.1063/1.1570920
Frequency multiplication of microwave radiation by propagating space-charge domains in a semiconductor superlattice
R. Scheuerer; M. Haeussler; K. F. Renk; E. Schomburg; Yu. I. Koschurinov; D. G. Pavelev; N. Maleev; V. Ustinov; A. Zhukov
Appl. Phys. Lett. 82, 2826–2828 (2003)
https://doi.org/10.1063/1.1569999
The use of Simmons’ equation to quantify the insulating barrier parameters in tunnel junctions
Appl. Phys. Lett. 82, 2832–2834 (2003)
https://doi.org/10.1063/1.1569986
Invasive nature of corona charging on thermal structures with nanometer-thick oxides revealed by electron spin resonance
Appl. Phys. Lett. 82, 2835–2837 (2003)
https://doi.org/10.1063/1.1540245
Extended wavelength InGaAs on GaAs using InAlAs buffer for back-side-illuminated short-wave infrared detectors
Appl. Phys. Lett. 82, 2838–2840 (2003)
https://doi.org/10.1063/1.1569042
Terahertz studies of carrier dynamics and dielectric response of n-type, freestanding epitaxial GaN
Appl. Phys. Lett. 82, 2841–2843 (2003)
https://doi.org/10.1063/1.1569988
MAGNETISM AND SUPERCONDUCTIVITY
Hot isostatic pressing of powder in tube wires
A. Serquis; L. Civale; D. L. Hammon; X. Z. Liao; J. Y. Coulter; Y. T. Zhu; M. Jaime; D. E. Peterson; F. M. Mueller; V. F. Nesterenko; Y. Gu
Appl. Phys. Lett. 82, 2847–2849 (2003)
https://doi.org/10.1063/1.1571231
Sharp ferromagnet/semiconductor interfaces by electrodeposition of Ni thin films onto substrates
Appl. Phys. Lett. 82, 2853–2855 (2003)
https://doi.org/10.1063/1.1571229
FeRh/FePt exchange spring films for thermally assisted magnetic recording media
Appl. Phys. Lett. 82, 2859–2861 (2003)
https://doi.org/10.1063/1.1571232
Prediction of large polar Kerr rotation in the Heusler-related alloys AuMnSb and AuMnSn
Appl. Phys. Lett. 82, 2862–2864 (2003)
https://doi.org/10.1063/1.1569425
Evidence of electronic phase separation in -doped
Appl. Phys. Lett. 82, 2865–2867 (2003)
https://doi.org/10.1063/1.1570001
Current-induced magnetization switching in magnetic tunnel junctions
Appl. Phys. Lett. 82, 2871–2873 (2003)
https://doi.org/10.1063/1.1569044
DIELECTRICS AND FERROELECTRICITY
Atomic layer deposition of on W for metal–insulator–metal capacitor application
Appl. Phys. Lett. 82, 2874–2876 (2003)
https://doi.org/10.1063/1.1569985
High tunability in compositionally graded epitaxial barium strontium titanate thin films by pulsed-laser deposition
Appl. Phys. Lett. 82, 2877–2879 (2003)
https://doi.org/10.1063/1.1569427
Dielectric properties of multilayered thin films prepared by rf magnetron sputtering
Appl. Phys. Lett. 82, 2880–2882 (2003)
https://doi.org/10.1063/1.1569658
NANOSCALE SCIENCE AND DESIGN
Atomic-layer deposition of wear-resistant coatings for microelectromechanical devices
Appl. Phys. Lett. 82, 2883–2885 (2003)
https://doi.org/10.1063/1.1570926
Structural and optical properties of coherent GaN islands grown on
Appl. Phys. Lett. 82, 2889–2891 (2003)
https://doi.org/10.1063/1.1570000
Formation of lateral quantum dot molecules around self-assembled nanoholes
Appl. Phys. Lett. 82, 2892–2894 (2003)
https://doi.org/10.1063/1.1569992
Size-tunable infrared (1000–1600 nm) electroluminescence from PbS quantum-dot nanocrystals in a semiconducting polymer
Appl. Phys. Lett. 82, 2895–2897 (2003)
https://doi.org/10.1063/1.1570940
Surface nanostructuring of borosilicate glass by femtosecond nJ energy pulses
Egidijus Vanagas; Igor Kudryashov; Dmitrii Tuzhilin; Saulius Juodkazis; Shigeki Matsuo; Hiroaki Misawa
Appl. Phys. Lett. 82, 2901–2903 (2003)
https://doi.org/10.1063/1.1570514
Electron emission from diamond nanoparticles on metal tips
Appl. Phys. Lett. 82, 2904–2906 (2003)
https://doi.org/10.1063/1.1570498
DEVICE PHYSICS
Avalanche multiplication due to impact ionization in quantum-well infrared photodetectors: A quantitative approach
Appl. Phys. Lett. 82, 2907–2909 (2003)
https://doi.org/10.1063/1.1570927
Dependence of burn-in effect on thermal annealing of the GaAs:C base layer in GaInP heterojunction bipolar transistors
Appl. Phys. Lett. 82, 2910–2912 (2003)
https://doi.org/10.1063/1.1570512
GaN Schottky barrier photodetectors with a low-temperature GaN cap layer
M. L. Lee; J. K. Sheu; W. C. Lai; S. J. Chang; Y. K. Su; M. G. Chen; C. J. Kao; G. C. Chi; J. M. Tsai
Appl. Phys. Lett. 82, 2913–2915 (2003)
https://doi.org/10.1063/1.1570519
INTERDISCIPLINARY AND GENERAL PHYSICS
Decrease of the resonance bandwidth of micromechanical oscillators by phase control of the driving force
Appl. Phys. Lett. 82, 2919–2921 (2003)
https://doi.org/10.1063/1.1571228
Nanotomography based on double asymmetrical Bragg diffraction
Appl. Phys. Lett. 82, 2922–2924 (2003)
https://doi.org/10.1063/1.1569428
Attosecond physics and technology
O. Alexander, D. Ayuso, et al.
Significant improvement of breakdown voltage of Al0.86Ga0.14N Schottky barrier diodes by atomic layer etching
Tingang Liu, Zhiyuan Liu, et al.
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.