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Volume 82, Issue 11

17 March 2003

ISSN 0003-6951

EISSN 1077-3118

In this Issue

LASERS, OPTICS, AND OPTOELECTRONICS
PLASMAS AND ELECTRICAL DISCHARGES
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
ELECTRONIC TRANSPORT AND SEMICONDUCTORS
MAGNETISM AND SUPERCONDUCTIVITY
DIELECTRICS AND FERROELECTRICITY
NANOSCALE SCIENCE AND DESIGN
DEVICE PHYSICS
INTERDISCIPLINARY AND GENERAL PHYSICS
ERRATA

LASERS, OPTICS, AND OPTOELECTRONICS

Void channel microstructures in resin solids as an efficient way to infrared photonic crystals

M. J. Ventura; M. Straub; M. Gu

Appl. Phys. Lett. 82, 1649–1651 (2003) https://doi.org/10.1063/1.1560870

View articletitled, Void channel microstructures in resin solids as an efficient way to infrared photonic crystals

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Temporally multiplexed holographic polymer-dispersed liquid crystals

J. Qi; M. E. Sousa; A. K. Fontecchio; G. P. Crawford

Appl. Phys. Lett. 82, 1652–1654 (2003) https://doi.org/10.1063/1.1557767

View articletitled, Temporally multiplexed holographic polymer-dispersed liquid crystals

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Spectral and time-resolved photoluminescence studies of Eu-doped GaN

Ei Ei Nyein; U. Hömmerich; J. Heikenfeld; D. S. Lee; A. J. Steckl; J. M. Zavada

Appl. Phys. Lett. 82, 1655–1657 (2003) https://doi.org/10.1063/1.1560557

View articletitled, Spectral and time-resolved photoluminescence studies of Eu-doped GaN

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Growth of room-temperature “arsenic free” infrared photovoltaic detectors on GaSb substrate using metamorphic InAlSb digital alloy buffer layers

E. Plis; P. Rotella; S. Raghavan; L. R. Dawson; S. Krishna; D. Le; C. P. Morath

Appl. Phys. Lett. 82, 1658–1660 (2003) https://doi.org/10.1063/1.1556167

View articletitled, Growth of room-temperature “arsenic free” infrared photovoltaic detectors on GaSb substrate using metamorphic InAlSb digital alloy buffer layers

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Theoretical investigation of a two-dimensional photonic crystal slab with truncated cone air holes

Yoshinori Tanaka; Takashi Asano; Yoshihiro Akahane; Bong-Shik Song; Susumu Noda

Appl. Phys. Lett. 82, 1661–1663 (2003) https://doi.org/10.1063/1.1559947

View articletitled, Theoretical investigation of a two-dimensional photonic crystal slab with truncated cone air holes

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Interferometric study of thermal dynamics in GaAs-based quantum-cascade lasers

C. Pflügl; M. Litzenberger; W. Schrenk; D. Pogany; E. Gornik; G. Strasser

Appl. Phys. Lett. 82, 1664–1666 (2003) https://doi.org/10.1063/1.1561582

View articletitled, Interferometric study of thermal dynamics in GaAs-based quantum-cascade lasers

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Fabrication of three-dimensional polymer photonic crystal structures using single diffraction element interference lithography

Ivan Divliansky; Theresa S. Mayer; Kito S. Holliday; Vincent H. Crespi

Appl. Phys. Lett. 82, 1667–1669 (2003) https://doi.org/10.1063/1.1560860

View articletitled, Fabrication of three-dimensional polymer photonic crystal structures using single diffraction element interference lithography

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Ultrashort, nonlinear, optical time response of Fe-doped InGaAs/InP multiple quantum wells in 1.55-μm range

M. Guézo; S. Loualiche; J. Even; A. Le Corre; H. Folliot; C. Labbé; O. Dehaese; G. Dousselin

Appl. Phys. Lett. 82, 1670–1672 (2003) https://doi.org/10.1063/1.1557333

View articletitled, Ultrashort, nonlinear, optical time response of Fe-doped InGaAs/InP multiple quantum wells in 1.55-μm range

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Parametric study of ${Ga}_{1−x} {In}_{x} N_{y} {As}_{1−y} / GaAs$ quantum wells for $1.3-μ m$ laser operation

W. W. Chow; J. S. Harris, Jr.

Appl. Phys. Lett. 82, 1673–1675 (2003) https://doi.org/10.1063/1.1561154

View articletitled, Parametric study of <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">In</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">N</mi><mrow><mi>y</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">As</mi><mrow><mtext>1−y</mtext></mrow></msub><mi xmlns="">/</mi><mi mathvariant="normal" xmlns="">GaAs</mi></math></span> quantum wells for <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">1.3-μ</mtext><mi mathvariant="normal" xmlns="">m</mi></math></span> laser operation

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Near-field scanning optical microscopy of photonic crystal nanocavities

Koichi Okamoto; Marko Lončar; Tomoyuki Yoshie; Axel Scherer; Yueming Qiu; Pawan Gogna

Appl. Phys. Lett. 82, 1676–1678 (2003) https://doi.org/10.1063/1.1559646

View articletitled, Near-field scanning optical microscopy of photonic crystal nanocavities

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PLASMAS AND ELECTRICAL DISCHARGES

Potential for a hydrogen water-plasma laser

R. L. Mills; P. C. Ray; R. M. Mayo

Appl. Phys. Lett. 82, 1679–1681 (2003) https://doi.org/10.1063/1.1558213

View articletitled, Potential for a hydrogen water-plasma laser

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Improving the mechanical properties of single-walled carbon nanotube sheets by intercalation of polymeric adhesives

Jonathan N. Coleman; Werner J. Blau; Alan B. Dalton; Edgar Muñoz; Steve Collins; Bog G. Kim; Joselito Razal; Miles Selvidge; Guillermo Vieiro; Ray H. Baughman

Appl. Phys. Lett. 82, 1682–1684 (2003) https://doi.org/10.1063/1.1559421

View articletitled, Improving the mechanical properties of single-walled carbon nanotube sheets by intercalation of polymeric adhesives

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High-temperature resistive surface grating for spectral control of thermal radiation

Hitoshi Sai; Yoshiaki Kanamori; Hiroo Yugami

Appl. Phys. Lett. 82, 1685–1687 (2003) https://doi.org/10.1063/1.1560867

View articletitled, High-temperature resistive surface grating for spectral control of thermal radiation

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Strain-driven facet formation on self-assembled InAs islands on GaAs (311)A

Z. M. Wang; H. Wen; V. R. Yazdanpanah; J. L. Shultz; G. J. Salamo

Appl. Phys. Lett. 82, 1688–1690 (2003) https://doi.org/10.1063/1.1559945

View articletitled, Strain-driven facet formation on self-assembled InAs islands on GaAs (311)A

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Thermally induced oxide crystallinity and interface destruction in ${Ga}_{2} O_{3} - GaAs$ structures

M. Passlack; J. K. Abrokwah; Z. Yu; R. Droopad; C. Overgaard; H. Kawayoshi

Appl. Phys. Lett. 82, 1691–1693 (2003) https://doi.org/10.1063/1.1560875

View articletitled, Thermally induced oxide crystallinity and interface destruction in <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>3</mn></mrow></msub><mi xmlns="">–</mi><mi mathvariant="normal" xmlns="">GaAs</mi></math></span> structures

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Deep ultraviolet picosecond time-resolved photoluminescence studies of AlN epilayers

K. B. Nam; J. Li; M. L. Nakarmi; J. Y. Lin; H. X. Jiang

Appl. Phys. Lett. 82, 1694–1696 (2003) https://doi.org/10.1063/1.1559659

View articletitled, Deep ultraviolet picosecond time-resolved photoluminescence studies of AlN epilayers

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Alloy states in dilute ${GaAs}_{1−x} N_{x}$ alloys $(x<1%)$

X. D. Luo; J. S. Huang; Z. Y. Xu; C. L. Yang; J. Liu; W. K. Ge; Y. Zhang; A. Mascarenhas; H. P. Xin; C. W. Tu

Appl. Phys. Lett. 82, 1697–1699 (2003) https://doi.org/10.1063/1.1560872

View articletitled, Alloy states in dilute <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">GaAs</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">N</mi><mrow><mi>x</mi></mrow></msub></math></span> alloys <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">(x<1%)</mtext></math></span>

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Control of spin functionality in ZnMnSe-based structures: Spin switching versus spin alignment

I. A. Buyanova; G. Yu. Rudko; W. M. Chen; A. A. Toropov; S. V. Sorokin; S. V. Ivanov; P. S. Kop’ev

Appl. Phys. Lett. 82, 1700–1702 (2003) https://doi.org/10.1063/1.1561570

View articletitled, Control of spin functionality in ZnMnSe-based structures: Spin switching versus spin alignment

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Femtosecond laser-induced periodic surface structure on diamond film

Qihong Wu; Yurong Ma; Rongchuan Fang; Yuan Liao; Qingxuan Yu; Xiangli Chen; Kelvin Wang

Appl. Phys. Lett. 82, 1703–1705 (2003) https://doi.org/10.1063/1.1561581

View articletitled, Femtosecond laser-induced periodic surface structure on diamond film

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Formation of InAs self-assembled quantum rings on InP

T. Raz; D. Ritter; G. Bahir

Appl. Phys. Lett. 82, 1706–1708 (2003) https://doi.org/10.1063/1.1560868

View articletitled, Formation of InAs self-assembled quantum rings on InP

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Step-edge kinetics driving the formation of atomically flat (110) GaAs surfaces

Ji-Won Oh; Masahiro Yoshita; Hidefumi Akiyama; Loren N. Pfeiffer; Ken W. West

Appl. Phys. Lett. 82, 1709–1711 (2003) https://doi.org/10.1063/1.1560575

View articletitled, Step-edge kinetics driving the formation of atomically flat (110) GaAs surfaces

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Exciton quenching in Pt/GaN Schottky diodes with Ga- and N-face polarity

S. Shokhovets; D. Fuhrmann; R. Goldhahn; G. Gobsch; O. Ambacher; M. Hermann; U. Karrer; M. Eickhoff

Appl. Phys. Lett. 82, 1712–1714 (2003) https://doi.org/10.1063/1.1561160

View articletitled, Exciton quenching in Pt/GaN Schottky diodes with Ga- and N-face polarity

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Formation of regular arrays of silicon microspikes by femtosecond laser irradiation through a mask

M. Y. Shen; C. H. Crouch; J. E. Carey; R. Younkin; E. Mazur; M. Sheehy; C. M. Friend

Appl. Phys. Lett. 82, 1715–1717 (2003) https://doi.org/10.1063/1.1561162

View articletitled, Formation of regular arrays of silicon microspikes by femtosecond laser irradiation through a mask

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Stable protocrystalline silicon and unstable microcrystalline silicon at the onset of a microcrystalline regime

Jun Yong Ahn; Kyung Hoon Jun; Koeng Su Lim; Makoto Konagai

Appl. Phys. Lett. 82, 1718–1720 (2003) https://doi.org/10.1063/1.1561161

View articletitled, Stable protocrystalline silicon and unstable microcrystalline silicon at the onset of a microcrystalline regime

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Fe valency-induced effect on the magnetic and electrotransport properties in ${Nd}_{0.67} {Sr}_{0.33} {Mn}_{1−x} {Fe}_{x} O_{3}$ polycrystalline system

Y. L. Chang; C. K. Ong

Appl. Phys. Lett. 82, 1721–1723 (2003) https://doi.org/10.1063/1.1555259

View articletitled, Fe valency-induced effect on the magnetic and electrotransport properties in <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Nd</mi><mrow><mtext>0.67</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Sr</mi><mrow><mtext>0.33</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Mn</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Fe</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>3</mn></mrow></msub></math></span> polycrystalline system

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Sub-5-nm-spatial resolution in scanning spreading resistance microscopy using full-diamond tips

D. Álvarez; J. Hartwich; M. Fouchier; P. Eyben; W. Vandervorst

Appl. Phys. Lett. 82, 1724–1726 (2003) https://doi.org/10.1063/1.1559931

View articletitled, Sub-5-nm-spatial resolution in scanning spreading resistance microscopy using full-diamond tips

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Current-induced structural modification of silicon-on-insulator nanocircuits

N. Clement; A. Francinelli; D. Tonneau; Ph. Scotto; F. Jandard; H. Dallaporta; V. Safarov; D. Fraboulet; J. Gautier

Appl. Phys. Lett. 82, 1727–1729 (2003) https://doi.org/10.1063/1.1561573

View articletitled, Current-induced structural modification of silicon-on-insulator nanocircuits

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Infrared ellipsometry of GaAs epilayers on Si(100)

G. Yu; N. L. Rowell; D. J. Lockwood; T. Soga

Appl. Phys. Lett. 82, 1730–1732 (2003) https://doi.org/10.1063/1.1561577

View articletitled, Infrared ellipsometry of GaAs epilayers on Si(100)

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Magnetic study of an amorphous conducting polyaniline

Debangshu Chaudhuri; Ashwani Kumar; D. D. Sarma; M. Garcı́a-Hernández; Janhavi P. Joshi; S. V. Bhat

Appl. Phys. Lett. 82, 1733–1735 (2003) https://doi.org/10.1063/1.1561166

View articletitled, Magnetic study of an amorphous conducting polyaniline

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Surface charge accumulation of InN films grown by molecular-beam epitaxy

Hai Lu; William J. Schaff; Lester F. Eastman; C. E. Stutz

Appl. Phys. Lett. 82, 1736–1738 (2003) https://doi.org/10.1063/1.1562340

View articletitled, Surface charge accumulation of InN films grown by molecular-beam epitaxy

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Field-effect transistors on rubrene single crystals with parylene gate insulator

V. Podzorov; V. M. Pudalov; M. E. Gershenson

Appl. Phys. Lett. 82, 1739–1741 (2003) https://doi.org/10.1063/1.1560869

View articletitled, Field-effect transistors on rubrene single crystals with parylene gate insulator

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High-selectivity etching of polycrystalline 3C-SiC films using HBr-based transformer coupled plasma

Di Gao; Roger T. Howe; Roya Maboudian

Appl. Phys. Lett. 82, 1742–1744 (2003) https://doi.org/10.1063/1.1560561

View articletitled, High-selectivity etching of polycrystalline 3C-SiC films using HBr-based transformer coupled plasma

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Ni-seeding effects on the properties of polycrystalline silicon–germanium grown at low temperature

Jianjun Zhang; Kousaku Shimizu; Junichi Hanna

Appl. Phys. Lett. 82, 1745–1747 (2003) https://doi.org/10.1063/1.1561574

View articletitled, Ni-seeding effects on the properties of polycrystalline silicon–germanium grown at low temperature

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MAGNETISM AND SUPERCONDUCTIVITY

Point-dipole response from a magnetic force microscopy tip with a synthetic antiferromagnetic coating

Yihong Wu; Yatao Shen; Zhiyong Liu; Kebin Li; Jinjun Qiu

Appl. Phys. Lett. 82, 1748–1750 (2003) https://doi.org/10.1063/1.1560863

View articletitled, Point-dipole response from a magnetic force microscopy tip with a synthetic antiferromagnetic coating

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Structure and magnetic properties of high coercive NdFeB films with a perpendicular anisotropy

L. K. E. B. Serrona; A. Sugimura; N. Adachi; T. Okuda; H. Ohsato; I. Sakamoto; A. Nakanishi; M. Motokawa; D. H. Ping; K. Hono

Appl. Phys. Lett. 82, 1751–1753 (2003) https://doi.org/10.1063/1.1561576

View articletitled, Structure and magnetic properties of high coercive NdFeB films with a perpendicular anisotropy

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Microstructure and high critical current of powder-in-tube ${MgB}_{2}$

A. Serquis; L. Civale; D. L. Hammon; J. Y. Coulter; X. Z. Liao; Y. T. Zhu; D. E. Peterson; F. M. Mueller

Appl. Phys. Lett. 82, 1754–1756 (2003) https://doi.org/10.1063/1.1561572

View articletitled, Microstructure and high critical current of powder-in-tube <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">MgB</mi><mrow><mn>2</mn></mrow></msub></math></span>

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DIELECTRICS AND FERROELECTRICITY

High-performance TaN/HfSiON/Si metal-oxide-semiconductor structures prepared by ${NH}_{3}$ post-deposition anneal

Mohammad Shahariar Akbar; S. Gopalan; H.-J. Cho; K. Onishi; R. Choi; R. Nieh; C. S. Kang; Y. H. Kim; J. Han; S. Krishnan; Jack C. Lee

Appl. Phys. Lett. 82, 1757–1759 (2003) https://doi.org/10.1063/1.1544062

View articletitled, High-performance TaN/HfSiON/Si metal-oxide-semiconductor structures prepared by <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">NH</mi><mrow><mn>3</mn></mrow></msub></math></span> post-deposition anneal

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Electromechanical properties of Nd-doped ${Bi}_{4} {Ti}_{3} O_{12}$ films: A candidate for lead-free thin-film piezoelectrics

Hiroshi Maiwa; Naoya Iizawa; Daichi Togawa; Takashi Hayashi; Wataru Sakamoto; Mio Yamada; Shin-ichi Hirano

Appl. Phys. Lett. 82, 1760–1762 (2003) https://doi.org/10.1063/1.1560864

View articletitled, Electromechanical properties of Nd-doped <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Bi</mi><mrow><mn>4</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ti</mi><mrow><mn>3</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>12</mn></mrow></msub></math></span> films: A candidate for lead-free thin-film piezoelectrics

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NANOSCALE SCIENCE AND DESIGN

Polarized incandescent light emission from carbon nanotubes

Peng Li; Kaili Jiang; Ming Liu; Qunqing Li; Shoushan Fan; Jialin Sun

Appl. Phys. Lett. 82, 1763–1765 (2003) https://doi.org/10.1063/1.1558900

View articletitled, Polarized incandescent light emission from carbon nanotubes

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Highly anisotropic morphologies of GaAs(331) surfaces

V. R. Yazdanpanah; Z. M. Wang; G. J. Salamo

Appl. Phys. Lett. 82, 1766–1768 (2003) https://doi.org/10.1063/1.1561571

View articletitled, Highly anisotropic morphologies of GaAs(331) surfaces

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Spontaneous growth and luminescence of zinc sulfide nanobelts

Ying-Chun Zhu; Yoshio Bando; Dong-Feng Xue

Appl. Phys. Lett. 82, 1769–1771 (2003) https://doi.org/10.1063/1.1562339

View articletitled, Spontaneous growth and luminescence of zinc sulfide nanobelts

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Ordering self-assembled islands without substrate patterning

G. Capellini; M. De Seta; C. Spinella; F. Evangelisti

Appl. Phys. Lett. 82, 1772–1774 (2003) https://doi.org/10.1063/1.1561163

View articletitled, Ordering self-assembled islands without substrate patterning

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Magnetotransport of $p$ -type GaMnN assisted by highly conductive precipitates

K. H. Kim; K. J. Lee; D. J. Kim; H. J. Kim; Y. E. Ihm; D. Djayaprawira; M. Takahashi; C. S. Kim; C. G. Kim; S. H. Yoo

Appl. Phys. Lett. 82, 1775–1777 (2003) https://doi.org/10.1063/1.1561580

View articletitled, Magnetotransport of <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">p</mi></math></span>-type GaMnN assisted by highly conductive precipitates

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Fabrication of thiol-capped Pd nanoparticles: An electrochemical method

P. Zhang; T. K. Sham

Appl. Phys. Lett. 82, 1778–1780 (2003) https://doi.org/10.1063/1.1562334

View articletitled, Fabrication of thiol-capped Pd nanoparticles: An electrochemical method

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DEVICE PHYSICS

Coherent phonon spectroscopy of GaP Schottky diode

Y.-M. Chang

Appl. Phys. Lett. 82, 1781–1783 (2003) https://doi.org/10.1063/1.1560874

View articletitled, Coherent phonon spectroscopy of GaP Schottky diode

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Efficient CsF/Yb/Ag cathodes for organic light-emitting devices

M. Y. Chan; S. L. Lai; M. K. Fung; S. W. Tong; C. S. Lee; S. T. Lee

Appl. Phys. Lett. 82, 1784–1786 (2003) https://doi.org/10.1063/1.1561579

View articletitled, Efficient CsF/Yb/Ag cathodes for organic light-emitting devices

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Large memory window and long charge-retention time in ultranarrow-channel silicon floating-dot memory

Masumi Saitoh; Eiji Nagata; Toshiro Hiramoto

Appl. Phys. Lett. 82, 1787–1789 (2003) https://doi.org/10.1063/1.1562343

View articletitled, Large memory window and long charge-retention time in ultranarrow-channel silicon floating-dot memory

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Low-frequency noise overshoot in ultrathin gate oxide silicon-on-insulator metal–oxide–semiconductor field-effect transistors

A. Mercha; E. Simoen; H. van Meer; C. Claeys

Appl. Phys. Lett. 82, 1790–1792 (2003) https://doi.org/10.1063/1.1561575

View articletitled, Low-frequency noise overshoot in ultrathin gate oxide silicon-on-insulator metal–oxide–semiconductor field-effect transistors

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INTERDISCIPLINARY AND GENERAL PHYSICS

Morphology and surface reconstructions of $GaN (11̄00)$ surfaces

C. D. Lee; R. M. Feenstra; J. E. Northrup; L. Lymperakis; J. Neugebauer

Appl. Phys. Lett. 82, 1793–1795 (2003) https://doi.org/10.1063/1.1560558

View articletitled, Morphology and surface reconstructions of <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">GaN</mi><mtext xmlns="">(11̄00)</mtext></math></span> surfaces

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Experimental investigation for field-induced interaction force of two spheres

Zhiyong Wang; Zheng Peng; Kunquan Lu; Weijia Wen

Appl. Phys. Lett. 82, 1796–1798 (2003) https://doi.org/10.1063/1.1560556

View articletitled, Experimental investigation for field-induced interaction force of two spheres

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ERRATA

Publisher’s Note: “Observation of a localized electron beam in large-area microwave discharge” [Appl. Phys. Lett. 82, 694 (2003)]

Tibor Terebessy; Milan Širý; Masashi Kando; Jozef Kudela; Dariusz Korzec

Appl. Phys. Lett. 82, 1799 (2003) https://doi.org/10.1063/1.1562948

View articletitled, Publisher’s Note: “Observation of a localized electron beam in large-area microwave discharge” [Appl. Phys. Lett. <strong>82</strong>, 694 (2003)]

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