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LASERS, OPTICS, AND OPTOELECTRONICS

Photoacoustic trace gas detection of ethane using a continuously tunable, continuous-wave optical parametric oscillator based on periodically poled lithium niobate

M. M. J. W. van Herpen; Shaocheng Li; S. E. Bisson; F. J. M. Harren

Appl. Phys. Lett. 81, 1157–1159 (2002) https://doi.org/10.1063/1.1500410

Abstract

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Use of polarization sensitivity for three-dimensional optical data storage in polymer dispersed liquid crystals under two-photon illumination

Dennis McPhail; Min Gu

Appl. Phys. Lett. 81, 1160–1162 (2002) https://doi.org/10.1063/1.1499988

Abstract

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Effective index method for heterostructure-slab-waveguide-based two-dimensional photonic crystals

Min Qiu

Appl. Phys. Lett. 81, 1163–1165 (2002) https://doi.org/10.1063/1.1500774

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6 W InGaAsSb(Gd)/InAsSbP double-heterostructure diode lasers emitting at λ=3.3 μm

M. Aydaraliev; N. V. Zotova; S. A. Karandashov; B. A. Matveev; M. A. Remennyi; N. M. Stus’; G. N. Talalakin; W. W. Bewley; J. R. Lindle; J. R. Meyer

Appl. Phys. Lett. 81, 1166–1167 (2002) https://doi.org/10.1063/1.1499219

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Achieving very-low-loss group velocity reduction without electromagnetically induced transparency

L. Deng; E. W. Hagley; M. Kozuma; D. Akamatsu; M. G. Payne

Appl. Phys. Lett. 81, 1168–1170 (2002) https://doi.org/10.1063/1.1499995

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Light scattering in transparent glass ceramics

S. Hendy

Appl. Phys. Lett. 81, 1171–1173 (2002) https://doi.org/10.1063/1.1499989

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Terahertz frequency difference from vertically integrated low-temperature-grown GaAs photodetector

E. Peytavit; S. Arscott; D. Lippens; G. Mouret; S. Matton; P. Masselin; R. Bocquet; J. F. Lampin; L. Desplanque; F. Mollot

Appl. Phys. Lett. 81, 1174–1176 (2002) https://doi.org/10.1063/1.1499517

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Ultrafast switch-off of an electrically pumped quantum-dot laser

A. V. Platonov; C. Lingk; J. Feldmann; M. Arzberger; G. Böhm; M.-C. Amann; G. Abstreiter

Appl. Phys. Lett. 81, 1177–1179 (2002) https://doi.org/10.1063/1.1500431

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Effects of sampling and limited data in optical tomography

Vadim A. Markel; John C. Schotland

Appl. Phys. Lett. 81, 1180–1182 (2002) https://doi.org/10.1063/1.1495543

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PLASMAS AND ELECTRICAL DISCHARGES

Magnetic field effect on the sheath thickness in plasma immersion ion implantation

M. Keidar; O. R. Monteiro; A. Anders; I. D. Boyd

Appl. Phys. Lett. 81, 1183–1185 (2002) https://doi.org/10.1063/1.1499516

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Photoluminescence of strained and relaxed multilayered Ge islands on Si(001)

E. Palange; L. Di Gaspare; A. Notargiacomo; G. Capellini; F. Evangelisti

Appl. Phys. Lett. 81, 1186–1188 (2002) https://doi.org/10.1063/1.1500776

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Structure transformations and superhardness effects in V/Ti nanostructured multilayers

Junhua Xu; Masao Kamiko; Yaomin Zhou; Guanghong Lu; Ryoichi Yamamoto; Lihua Yu; Isao Kojima

Appl. Phys. Lett. 81, 1189–1191 (2002) https://doi.org/10.1063/1.1500435

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Evidence of ductile response of alumina ceramic under shock wave compression

E. B. Zaretsky; G. I. Kanel

Appl. Phys. Lett. 81, 1192–1194 (2002) https://doi.org/10.1063/1.1499992

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Influence of a thin GaAs cap layer on structural and optical properties of InAs quantum dots

Fariba Ferdos; Shumin Wang; Yongqiang Wei; Anders Larsson; Mahdad Sadeghi; Qingxiang Zhao

Appl. Phys. Lett. 81, 1195–1197 (2002) https://doi.org/10.1063/1.1500778

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Viscoelasticity of silica aerogels at ultrasonic frequencies

T. E. Gómez Álvarez-Arenas; F. R. Montero de Espinosa; M. Moner-Girona; E. Rodrı́guez; A. Roig; E. Molins

Appl. Phys. Lett. 81, 1198–1200 (2002) https://doi.org/10.1063/1.1499225

Abstract

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Threading dislocation reduction via laterally overgrown nonpolar $(112̄0)$ a-plane GaN

M. D. Craven; S. H. Lim; F. Wu; J. S. Speck; S. P. DenBaars

Appl. Phys. Lett. 81, 1201–1203 (2002) https://doi.org/10.1063/1.1498010

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Intrinsic tensile stress and grain boundary formation during Volmer–Weber film growth

Ashok Rajamani; Brian W. Sheldon; Eric Chason; Allan F. Bower

Appl. Phys. Lett. 81, 1204–1206 (2002) https://doi.org/10.1063/1.1494459

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Structural and optical properties of InGaN/GaN layers close to the critical layer thickness

S. Pereira; M. R. Correia; E. Pereira; C. Trager-Cowan; F. Sweeney; K. P. O’Donnell; E. Alves; N. Franco; A. D. Sequeira

Appl. Phys. Lett. 81, 1207–1209 (2002) https://doi.org/10.1063/1.1499220

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Improved structure and properties of single-wall carbon nanotube spun fibers

Brigitte Vigolo; Philippe Poulin; Marcel Lucas; Pascale Launois; Patrick Bernier

Appl. Phys. Lett. 81, 1210–1212 (2002) https://doi.org/10.1063/1.1497706

Abstract

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Optical switching properties from isotherms of Gd and GdMg hydride mirrors

M. Di Vece; S. J. M. Zevenhuizen; J. J. Kelly

Appl. Phys. Lett. 81, 1213–1215 (2002) https://doi.org/10.1063/1.1499765

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Thermal contact conductance of actuated interfaces

Woo-Bin Song; Michael S. Sutton; Joseph J. Talghader

Appl. Phys. Lett. 81, 1216–1218 (2002) https://doi.org/10.1063/1.1499518

Abstract

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Proposed model for calculating the standard formation enthalpy of binary transition-metal systems

R. F. Zhang; B. X. Liu

Appl. Phys. Lett. 81, 1219–1221 (2002) https://doi.org/10.1063/1.1499510

Abstract

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Electric-field-induced birefringence in ${LiNbO}_{3}$ measured by generalized transmission ellipsometry

G. E. Jellison, Jr.; C. O. Griffiths; D. E. Holcomb

Appl. Phys. Lett. 81, 1222–1224 (2002) https://doi.org/10.1063/1.1498497

Abstract

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Quantification of substitutional carbon loss from ${Si}_{0.998} C_{0.002}$ due to silicon self-interstitial injection during oxidation

M. S. Carroll; J. C. Sturm

Appl. Phys. Lett. 81, 1225–1227 (2002) https://doi.org/10.1063/1.1500411

Abstract

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Comparison of the birefringence in an azobenzene-side-chain copolymer induced by pulsed and continuous-wave irradiation

Věra Cimrová; Dieter Neher; Ralf Hildebrandt; Manuel Hegelich; Arend von der Lieth; Gerd Marowsky; Rainer Hagen; Sergej Kostromine; Thomas Bieringer

Appl. Phys. Lett. 81, 1228–1230 (2002) https://doi.org/10.1063/1.1499766

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Correlation between grain size and optical properties in zinc oxide thin films

Takahiro Matsumoto; Hiroyuki Kato; Kazuhiro Miyamoto; Michihiro Sano; Evgeniy A. Zhukov; Takafumi Yao

Appl. Phys. Lett. 81, 1231–1233 (2002) https://doi.org/10.1063/1.1499991

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Intersubband transition in $(GaN)_{m} /(AlN)_{n}$ superlattices in the wavelength range from 1.08 to 1.61 μm

Katsumi Kishino; Akihiko Kikuchi; Hidekazu Kanazawa; Tetsuo Tachibana

Appl. Phys. Lett. 81, 1234–1236 (2002) https://doi.org/10.1063/1.1500432

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Comparative study of ultrafast intersubband electron scattering times at $∼1.55 μ m$ wavelength in GaN/AlGaN heterostructures

J. D. Heber; C. Gmachl; H. M. Ng; A. Y. Cho

Appl. Phys. Lett. 81, 1237–1239 (2002) https://doi.org/10.1063/1.1500412

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Evolution and microstructure of shear bands in nanostructured Fe

Q. Wei; D. Jia; K. T. Ramesh; E. Ma

Appl. Phys. Lett. 81, 1240–1242 (2002) https://doi.org/10.1063/1.1501158

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Ballistic cooling in a wideband two-dimensional electron gas bolometric mixer

Mark Lee; L. N. Pfeiffer; K. W. West

Appl. Phys. Lett. 81, 1243–1245 (2002) https://doi.org/10.1063/1.1500429

Abstract

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Optical bandgap energy of wurtzite InN

Takashi Matsuoka; Hiroshi Okamoto; Masashi Nakao; Hiroshi Harima; Eiji Kurimoto

Appl. Phys. Lett. 81, 1246–1248 (2002) https://doi.org/10.1063/1.1499753

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Mechanism of two-dimensional electron gas formation in ${Al}_{x} {Ga}_{1−x} N/GaN$ heterostructures

Ho Won Jang; Chang Min Jeon; Ki Hong Kim; Jong Kyu Kim; Sung-Bum Bae; Jung-Hee Lee; Jae Wu Choi; Jong-Lam Lee

Appl. Phys. Lett. 81, 1249–1251 (2002) https://doi.org/10.1063/1.1501162

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Measurement of high electron temperatures in single atom metal point contacts by light emission

A. Downes; Ph. Dumas; M. E. Welland

Appl. Phys. Lett. 81, 1252–1254 (2002) https://doi.org/10.1063/1.1497188

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Intentional control of n-type conduction for Si-doped AlN and ${Al}_{X} {Ga}_{1−X} N$ $(0.42⩽x<1)$

Yoshitaka Taniyasu; Makoto Kasu; Naoki Kobayashi

Appl. Phys. Lett. 81, 1255–1257 (2002) https://doi.org/10.1063/1.1499738

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Maximization of the open circuit voltage for hydrogenated amorphous silicon $n–i–p$ solar cells by incorporation of protocrystalline silicon p-type layers

R. J. Koval; Chi Chen; G. M. Ferreira; A. S. Ferlauto; J. M. Pearce; P. I. Rovira; C. R. Wronski; R. W. Collins

Appl. Phys. Lett. 81, 1258–1260 (2002) https://doi.org/10.1063/1.1499735

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MAGNETISM AND SUPERCONDUCTIVITY

Magnon modes for thin circular vortex-state magnetic dots

B. A. Ivanov; C. E. Zaspel

Appl. Phys. Lett. 81, 1261–1263 (2002) https://doi.org/10.1063/1.1499515

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Enhanced antiferromagnetic exchange coupling in Fe/Si/Fe epitaxial trilayers with ${Fe}_{0.5} {Si}_{0.5}$ boundary layers

R. R. Gareev; D. E. Bürgler; M. Buchmeier; R. Schreiber; P. Grünberg

Appl. Phys. Lett. 81, 1264–1266 (2002) https://doi.org/10.1063/1.1499229

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Local magnetic anisotropy control in NiFe thin films via ion irradiation

S. I. Woods; S. Ingvarsson; J. R. Kirtley; H. F. Hamann; R. H. Koch

Appl. Phys. Lett. 81, 1267–1269 (2002) https://doi.org/10.1063/1.1498869

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Unidirectional coercivity enhancement in exchange-biased Co/CoO

T. Gredig; I. N. Krivorotov; P. Eames; E. D. Dahlberg

Appl. Phys. Lett. 81, 1270–1272 (2002) https://doi.org/10.1063/1.1498505

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High-transparency superconductor–insulator–normal- metal–insulator–superconductor Josephson junctions for digital electronics

I. P. Nevirkovets; J. B. Ketterson

Appl. Phys. Lett. 81, 1273–1275 (2002) https://doi.org/10.1063/1.1499768

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Large magnetocaloric effect in $La ({Fe}_{x} {Si}_{1−x})_{13}$ itinerant-electron metamagnetic compounds

S. Fujieda; A. Fujita; K. Fukamichi

Appl. Phys. Lett. 81, 1276–1278 (2002) https://doi.org/10.1063/1.1498148

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Ferromagnetic resonance in Ni–Mn–Ga films

S. I. Patil; Deng Tan; S. E. Lofland; S. M. Bhagat; I. Takeuchi; O. Famodu; J. C. Read; K.-S. Chang; C. Craciunescu; M. Wuttig

Appl. Phys. Lett. 81, 1279–1281 (2002) https://doi.org/10.1063/1.1501161

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Inductance-dependent characteristics of high- $T_{c}$ dc-superconducting quantum interference device amplifiers

E. E. Mitchell; D. L. Tilbrook; C. P. Foley; J. C. MacFarlane

Appl. Phys. Lett. 81, 1282–1284 (2002) https://doi.org/10.1063/1.1500780

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DIELECTRICS AND FERROELECTRICITY

Dielectric properties and high tunability of ${Ba(Ti}_{0.7} {Zr}_{0.3}) O_{3}$ ceramics under dc electric field

Zhi Yu; Chen Ang; Ruyan Guo; A. S. Bhalla

Appl. Phys. Lett. 81, 1285–1287 (2002) https://doi.org/10.1063/1.1498496

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Compatibility of polycrystalline silicon gate deposition with ${HfO}_{2}$ and ${Al}_{2} O_{3} / {HfO}_{2}$ gate dielectrics

D. C. Gilmer; R. Hegde; R. Cotton; R. Garcia; V. Dhandapani; D. Triyoso; D. Roan; A. Franke; R. Rai; L. Prabhu; C. Hobbs; J. M. Grant; L. La; S. Samavedam; B. Taylor; H. Tseng; P. Tobin

Appl. Phys. Lett. 81, 1288–1290 (2002) https://doi.org/10.1063/1.1499514

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Unusual lattice distortion in a ${Ba}_{0.5} {Sr}_{0.5} {TiO}_{3}$ thin film on a ${LaAlO}_{3}$ substrate

J. H. Chen; C. L. Lia; K. Urban; C. L. Chen

Appl. Phys. Lett. 81, 1291–1293 (2002) https://doi.org/10.1063/1.1500413

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Low hydrogen content in trimethylsilane-based dielectric barriers deposited by inductively coupled plasma

Jia-Min Shieh; Kou-Chiang Tsai; Bau-Tong Dai

Appl. Phys. Lett. 81, 1294–1296 (2002) https://doi.org/10.1063/1.1500794

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NANOSCALE SCIENCE AND DESIGN

Growth of aligned carbon nanotubes on self-similar macroscopic templates

Anyuan Cao; Bingqing Wei; Y. Jung; Robert Vajtai; P. M. Ajayan; G. Ramanath

Appl. Phys. Lett. 81, 1297–1299 (2002) https://doi.org/10.1063/1.1500428

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High-resolution surface charge image achieved by a multiforce sensor based on a quartz tuning fork in electrostatic force microscope

Zhi-yong Wang; Jian-bin Bao; Hong-hai Zhang; Wen-ming Guo

Appl. Phys. Lett. 81, 1300–1302 (2002) https://doi.org/10.1063/1.1500779

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From amplified spontaneous emission to microring lasing using nanocrystal quantum dot solids

A. V. Malko; A. A. Mikhailovsky; M. A. Petruska; J. A. Hollingsworth; H. Htoon; M. G. Bawendi; V. I. Klimov

Appl. Phys. Lett. 81, 1303–1305 (2002) https://doi.org/10.1063/1.1497708

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“Self-leveling” uncooled microcantilever thermal detector

J. L. Corbeil; N. V. Lavrik; S. Rajic; P. G. Datskos

Appl. Phys. Lett. 81, 1306–1308 (2002) https://doi.org/10.1063/1.1498870

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Electronic structure of nanometer-scale GaAs whiskers

M. P. Persson; H. Q. Xu

Appl. Phys. Lett. 81, 1309–1311 (2002) https://doi.org/10.1063/1.1498871

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Heterostructures of ZnO–Zn coaxial nanocables and ZnO nanotubes

Jih-Jen Wu; Sai-Chang Liu; Chien-Ting Wu; Kuei-Hsien Chen; Li-Chyong Chen

Appl. Phys. Lett. 81, 1312–1314 (2002) https://doi.org/10.1063/1.1499512

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Patterning Sub-50 nm features with near-field embedded-amplitude masks

James G. Goodberlet; Hamide Kavak

Appl. Phys. Lett. 81, 1315–1317 (2002) https://doi.org/10.1063/1.1495538

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DEVICE PHYSICS

Photoinduced ferroelectric hysteresis curve in organic CuPc photoconductor/inorganic ${BaTiO}_{3}$ ferroelectric heterojunction photomemory

Young-Geun Park; Hea-Yeon Lee; Hidekazu Tanaka; Hitoshi Tabata; Tomoji Kawai

Appl. Phys. Lett. 81, 1318–1320 (2002) https://doi.org/10.1063/1.1500772

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High-speed multiplication-type photodetecting device using organic codeposited films

Goh Matsunobu; Yuko Oishi; Masaaki Yokoyama; Masahiro Hiramoto

Appl. Phys. Lett. 81, 1321–1322 (2002) https://doi.org/10.1063/1.1500771

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Silicon waveguide two-photon absorption detector at 1.5 μm wavelength for autocorrelation measurements

T. K. Liang; H. K. Tsang; I. E. Day; J. Drake; A. P. Knights; M. Asghari

Appl. Phys. Lett. 81, 1323–1325 (2002) https://doi.org/10.1063/1.1500430

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Lateral current transport path, a model for GaN-based light-emitting diodes: Applications to practical device designs

Hyunsoo Kim; Seong-Ju Park; Hyunsang Hwang; Nae-Man Park

Appl. Phys. Lett. 81, 1326–1328 (2002) https://doi.org/10.1063/1.1499994

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Thick ${LiNbO}_{3}$ layers on diamond-coated silicon for surface acoustic wave filters

E. Dogheche; V. Sadaune; X. Lansiaux; D. Remiens; T. Gryba

Appl. Phys. Lett. 81, 1329–1331 (2002) https://doi.org/10.1063/1.1501156

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Power gain in a quantum-dot cellular automata latch

Ravi K. Kummamuru; John Timler; Geza Toth; Craig S. Lent; Rajagopal Ramasubramaniam; Alexei O. Orlov; Gary H. Bernstein; Gregory L. Snider

Appl. Phys. Lett. 81, 1332–1334 (2002) https://doi.org/10.1063/1.1499511

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APPLIED BIOPHYSICS

Simultaneous atomic force microscope and quartz crystal microbalance measurements: Investigation of human plasma fibrinogen adsorption

K.-H. Choi; J.-M. Friedt; F. Frederix; A. Campitelli; G. Borghs

Appl. Phys. Lett. 81, 1335–1337 (2002) https://doi.org/10.1063/1.1500777

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INTERDISCIPLINARY AND GENERAL PHYSICS

A multiplex infrared-visible sum-frequency spectrometer with wavelength tunability of the visible probe

Taka-aki Ishibashi; Hiroshi Onishi

Appl. Phys. Lett. 81, 1338–1340 (2002) https://doi.org/10.1063/1.1499986

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Propagation of water waves through finite periodic arrays of vertical cylinders

Young-Ki Ha; J.-E. Kim; H. Y. Park; In-Won Lee

Appl. Phys. Lett. 81, 1341–1343 (2002) https://doi.org/10.1063/1.1499520

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Pattern-induced ripple structures at silicon-oxide/silicon interface by excimer laser irradiation

X. Y. Chen; Y. F. Lu; B. J. Cho; Y. P. Zeng; J. N. Zeng; Y. H. Wu

Appl. Phys. Lett. 81, 1344–1346 (2002) https://doi.org/10.1063/1.1496141

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Spectral measurements of gyrotron oscillator with ferroelectric electron gun

M. Einat; E. Jerby; G. Rosenman

Appl. Phys. Lett. 81, 1347–1349 (2002) https://doi.org/10.1063/1.1499993

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High-efficiency solar cells based on $Cu (InAl) {Se}_{2}$ thin films

S. Marsillac; P. D. Paulson; M. W. Haimbodi; R. W. Birkmire; W. N. Shafarman

Appl. Phys. Lett. 81, 1350–1352 (2002) https://doi.org/10.1063/1.1499990

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COMMENTS

Comment on “Low Stokes shift in thick and homogeneous InGaN epilayers” [Appl. Phys. Lett. 80, 550 (2002)]

K. P. O’Donnell; R. W. Martin; S. Pereira

Appl. Phys. Lett. 81, 1353–1354 (2002) https://doi.org/10.1063/1.1498003

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Response to “Comment on ‘Low Stokes shift in thick and homogeneous InGaN epilayers’ ” [Appl. Phys. Lett 81, 1353 (2002)]

S. Srinivasan; F. Bertram; A. Bell; F. A. Ponce

Appl. Phys. Lett. 81, 1355–1356 (2002) https://doi.org/10.1063/1.1498004

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Comment on “Optical absorption measurements of silica containing Si nanocrystals produced by ion implantation and thermal annealing” [Appl. Phys. Lett. 80, 1325 (2002)]

Leonid Khriachtchev

Appl. Phys. Lett. 81, 1357–1358 (2002) https://doi.org/10.1063/1.1499740

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ERRATA

Erratum: “Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes” [Appl. Phys. Lett. 80, 3817 (2002)]

S. J. Wind; J. Appenzeller; R. Martel; V. Derycke; Ph. Avouris

Appl. Phys. Lett. 81, 1359 (2002) https://doi.org/10.1063/1.1502905

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Publisher’s Note: “Direct writing of fluorescent patterns on LiF films by x-ray microprobe” [Appl. Phys. Lett. 80, 3862 (2002)]

R. Larciprete; L. Gregoratti; M. Danailov; R. M. Montereali; F. Bonfigli; M. Kiskinova

Appl. Phys. Lett. 81, 1360 (2002) https://doi.org/10.1063/1.1502906

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