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Issues
23 December 2002
ISSN 0003-6951
EISSN 1077-3118
In this Issue
LASERS, OPTICS, AND OPTOELECTRONICS
Optical microcavities with subnanometer linewidths based on porous silicon
Appl. Phys. Lett. 81, 4895–4897 (2002)
https://doi.org/10.1063/1.1531226
Optical spectroscopy of single InAs/InGaAs quantum dots in a quantum well
Appl. Phys. Lett. 81, 4898–4900 (2002)
https://doi.org/10.1063/1.1529315
Comprehensive above-threshold analysis of large-aperture (8–10 μm) antiresonant reflecting optical waveguide diode lasers
Appl. Phys. Lett. 81, 4901–4903 (2002)
https://doi.org/10.1063/1.1531830
Experimental investigation of the effect of wetting-layer states on the gain–current characteristic of quantum-dot lasers
Appl. Phys. Lett. 81, 4904–4906 (2002)
https://doi.org/10.1063/1.1532549
Optimal rubbing angle for reflective in-plane-switching liquid crystal displays
Appl. Phys. Lett. 81, 4907–4909 (2002)
https://doi.org/10.1063/1.1532534
Milliwatt power deep ultraviolet light-emitting diodes over sapphire with emission at 278 nm
J. P. Zhang; A. Chitnis; V. Adivarahan; S. Wu; V. Mandavilli; R. Pachipulusu; M. Shatalov; G. Simin; J. W. Yang; M. Asif Khan
Appl. Phys. Lett. 81, 4910–4912 (2002)
https://doi.org/10.1063/1.1531835
Pure red electroluminescence from a host material of binuclear gallium complex
Appl. Phys. Lett. 81, 4913–4915 (2002)
https://doi.org/10.1063/1.1532756
Post-growth p-type doping enhancement for ZnSe-based lasers using a interlayer
Oliver Schulz; Matthias Strassburg; Thorsten Rissom; Udo W. Pohl; Dieter Bimberg; Matthias Klude; Detlef Hommel
Appl. Phys. Lett. 81, 4916–4918 (2002)
https://doi.org/10.1063/1.1532544
Scattering rings in optically anisotropic porous silicon
Appl. Phys. Lett. 81, 4919–4921 (2002)
https://doi.org/10.1063/1.1531834
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
Optical study of the full photonic band gap in silicon inverse opals
Appl. Phys. Lett. 81, 4925–4927 (2002)
https://doi.org/10.1063/1.1530752
Determination of the azimuthal orientational spread of GaN films by x-ray diffraction
Yue Jun Sun; Oliver Brandt; Tian Yu Liu; Achim Trampert; Klaus H. Ploog; Jürgen Bläsing; Alois Krost
Appl. Phys. Lett. 81, 4928–4930 (2002)
https://doi.org/10.1063/1.1531832
Magnetically-modulated refractive index of magnetic fluid films
Appl. Phys. Lett. 81, 4931–4933 (2002)
https://doi.org/10.1063/1.1531831
Lasing from a single-quantum wire
Yuhei Hayamizu; Masahiro Yoshita; Shinichi Watanabe; Hidefumi Akiyama; Loren N. Pfeiffer; Ken W. West
Appl. Phys. Lett. 81, 4937–4939 (2002)
https://doi.org/10.1063/1.1532111
Spinodal patterning in organic–inorganic hybrid layer systems
Appl. Phys. Lett. 81, 4940–4942 (2002)
https://doi.org/10.1063/1.1531223
Surface domain engineering in congruent lithium niobate single crystals: A route to submicron periodic poling
Appl. Phys. Lett. 81, 4946–4948 (2002)
https://doi.org/10.1063/1.1532773
A neutron reflectometry study of the interface between poly(9,9-dioctylfluorene) and poly(methyl methacrylate)
Appl. Phys. Lett. 81, 4949–4951 (2002)
https://doi.org/10.1063/1.1532531
ELECTRONIC TRANSPORT AND SEMICONDUCTORS
Millisecond minority carrier lifetimes in n-type multicrystalline silicon
Appl. Phys. Lett. 81, 4952–4954 (2002)
https://doi.org/10.1063/1.1529089
AlGaN layers grown on GaN using strain-relief interlayers
C. Q. Chen; J. P. Zhang; M. E. Gaevski; H. M. Wang; W. H. Sun; R. S. Q. Fareed; J. W. Yang; M. Asif Khan
Appl. Phys. Lett. 81, 4961–4963 (2002)
https://doi.org/10.1063/1.1531219
Measuring the energetic distribution of ballistic electrons after their refraction at an Au–GaAs interface
Appl. Phys. Lett. 81, 4964–4966 (2002)
https://doi.org/10.1063/1.1532751
Impact of organic contamination on the electrical properties of hydrogen-terminated silicon under ambient conditions
Appl. Phys. Lett. 81, 4967–4969 (2002)
https://doi.org/10.1063/1.1532758
Two charge states of dominant acceptor in unintentionally doped GaN: Evidence from photoluminescence study
Appl. Phys. Lett. 81, 4970–4972 (2002)
https://doi.org/10.1063/1.1531227
Simulation of interface states effect on the scanning capacitance microscopy measurement of junctions
Appl. Phys. Lett. 81, 4973–4975 (2002)
https://doi.org/10.1063/1.1532547
MAGNETISM AND SUPERCONDUCTIVITY
Superconducting single-electron transistor coupled to a locally tunable electromagnetic environment
Appl. Phys. Lett. 81, 4976–4978 (2002)
https://doi.org/10.1063/1.1530731
Influence of surface topography on rf current distribution in superconducting microwave devices
Appl. Phys. Lett. 81, 4979–4981 (2002)
https://doi.org/10.1063/1.1530753
Highly crystallized as-grown smooth and superconducting films by molecular-beam epitaxy
Appl. Phys. Lett. 81, 4982–4984 (2002)
https://doi.org/10.1063/1.1530732
Field-induced anisotropic nitrogen distribution as the source of uniaxial magnetic anisotropy in films
Appl. Phys. Lett. 81, 4985–4987 (2002)
https://doi.org/10.1063/1.1531224
Charge redistribution in probed by Raman spectroscopy: phonon as a probe of carrier dynamics in the plane
Appl. Phys. Lett. 81, 4988–4990 (2002)
https://doi.org/10.1063/1.1529082
High-Curie-temperature obtained by resistance-monitored annealing
K. W. Edmonds; K. Y. Wang; R. P. Campion; A. C. Neumann; N. R. S. Farley; B. L. Gallagher; C. T. Foxon
Appl. Phys. Lett. 81, 4991–4993 (2002)
https://doi.org/10.1063/1.1529079
Melt-textured based material doped with Li and Zn: Comparison of high trapped fields and pinning
Appl. Phys. Lett. 81, 5000–5002 (2002)
https://doi.org/10.1063/1.1532530
Highly aligned, spin polarized thin films of by a chemical vapor process
J. Rager; A. V. Berenov; L. F. Cohen; W. R. Branford; Y. V. Bugoslavsky; Y. Miyoshi; M. Ardakani; J. L. MacManus-Driscoll
Appl. Phys. Lett. 81, 5003–5005 (2002)
https://doi.org/10.1063/1.1532752
DIELECTRICS AND FERROELECTRICITY
Evidence of the relaxor-paraelectric phase transition in ceramics
Appl. Phys. Lett. 81, 5006–5008 (2002)
https://doi.org/10.1063/1.1530711
Epitaxial growth and dielectric properties of homologous thin films
Appl. Phys. Lett. 81, 5009–5011 (2002)
https://doi.org/10.1063/1.1530741
Effect of interlayer on dielectric properties of thin films deposited on differently oriented Pt electrodes
Appl. Phys. Lett. 81, 5012–5014 (2002)
https://doi.org/10.1063/1.1531218
Graded ferroelectric thin films: Possible origin of the shift along the polarization axis
Appl. Phys. Lett. 81, 5015–5017 (2002)
https://doi.org/10.1063/1.1532771
Effects of Hf contamination on the properties of silicon oxide metal–oxide–semiconductor devices
Appl. Phys. Lett. 81, 5018–5020 (2002)
https://doi.org/10.1063/1.1532755
NANOSCALE SCIENCE AND DESIGN
Microstructure and field emission properties of coral-like carbon nanotubes
Appl. Phys. Lett. 81, 5024–5026 (2002)
https://doi.org/10.1063/1.1527992
Electron-stimulated hydrogen desorption from diamond surfaces and its influence on the low-pressure synthesis of diamond
Appl. Phys. Lett. 81, 5027–5029 (2002)
https://doi.org/10.1063/1.1526460
Enhancing the resolution of scanning near-field optical microscopy by a metal tip grown on an aperture probe
Appl. Phys. Lett. 81, 5030–5032 (2002)
https://doi.org/10.1063/1.1530736
Vacancy clustering model for Ti non-steady-state radiation-enhanced diffusion in MgO(100)
Appl. Phys. Lett. 81, 5033–5035 (2002)
https://doi.org/10.1063/1.1531829
Self-organized ZnO quantum dots on substrates by metalorganic chemical vapor deposition
Appl. Phys. Lett. 81, 5036–5038 (2002)
https://doi.org/10.1063/1.1527690
Colloidal particle foams: Templates for Au nanowire networks?
Appl. Phys. Lett. 81, 5039–5041 (2002)
https://doi.org/10.1063/1.1526924
Charge imaging and manipulation using carbon nanotube probes
Appl. Phys. Lett. 81, 5042–5044 (2002)
https://doi.org/10.1063/1.1530377
Reversible adsorption-enhanced quantum confinement in semiconductor quantum dots
Appl. Phys. Lett. 81, 5045–5047 (2002)
https://doi.org/10.1063/1.1532109
Charge injection in individual silicon nanoparticles deposited on a conductive substrate
Appl. Phys. Lett. 81, 5054–5056 (2002)
https://doi.org/10.1063/1.1532110
DEVICE PHYSICS
APPLIED BIOPHYSICS
Observations of pressure-wave-excited contrast agent bubbles in the vicinity of cells
Appl. Phys. Lett. 81, 5060–5062 (2002)
https://doi.org/10.1063/1.1531225
Realization of hollow micronozzles for electrical measurements on living cells
Appl. Phys. Lett. 81, 5063–5065 (2002)
https://doi.org/10.1063/1.1528292
INTERDISCIPLINARY AND GENERAL PHYSICS
Hundred-micron-sized all-solid-state Li secondary battery arrays embedded in a Si substrate
Appl. Phys. Lett. 81, 5066–5068 (2002)
https://doi.org/10.1063/1.1531220
Miniaturized, highly sensitive single-chip multichannel quartz-crystal microbalance
Appl. Phys. Lett. 81, 5069–5071 (2002)
https://doi.org/10.1063/1.1532750
Attosecond physics and technology
O. Alexander, D. Ayuso, et al.
Significant improvement of breakdown voltage of Al0.86Ga0.14N Schottky barrier diodes by atomic layer etching
Tingang Liu, Zhiyuan Liu, et al.
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.