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LASERS, OPTICS, AND OPTOELECTRONICS

Creating large bandwidth line defects by embedding dielectric waveguides into photonic crystal slabs

Wah Tung Lau; Shanhui Fan

Appl. Phys. Lett. 81, 3915–3917 (2002) https://doi.org/10.1063/1.1523637

Abstract

View articletitled, Creating large bandwidth line defects by embedding dielectric waveguides into photonic crystal slabs

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Detection of thermal acoustic radiation from laser-heated deep tissue

Eugene V. Krotov; Maxim V. Zhadobov; Alexander M. Reyman; Grigory P. Volkov; Vladimir P. Zharov

Appl. Phys. Lett. 81, 3918–3920 (2002) https://doi.org/10.1063/1.1521245

Abstract

View articletitled, Detection of thermal acoustic radiation from laser-heated deep tissue

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High-efficiency top-emitting organic light-emitting devices

M.-H. Lu; M. S. Weaver; T. X. Zhou; M. Rothman; R. C. Kwong; M. Hack; J. J. Brown

Appl. Phys. Lett. 81, 3921–3923 (2002) https://doi.org/10.1063/1.1523150

Abstract

View articletitled, High-efficiency top-emitting organic light-emitting devices

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Energy transfer from organics to rare-earth complexes

Marı́a A. Dı́az-Garcı́a; Susana Fernández De Ávila; Mark G. Kuzyk

Appl. Phys. Lett. 81, 3924–3926 (2002) https://doi.org/10.1063/1.1520338

Abstract

View articletitled, Energy transfer from organics to rare-earth complexes

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Separation of photonic crystal waveguides modes using femtosecond time-of-flight

M. C. Netti; C. E. Finlayson; J. J. Baumberg; M. D. B. Charlton; M. E. Zoorob; J. S. Wilkinson; G. J. Parker

Appl. Phys. Lett. 81, 3927–3929 (2002) https://doi.org/10.1063/1.1520709

Abstract

View articletitled, Separation of photonic crystal waveguides modes using femtosecond time-of-flight

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All-solid-state electrochromic device composed of ${WO}_{3}$ and $Ni (OH)_{2}$ with a ${Ta}_{2} O_{5}$ protective layer

Kwang-Soon Ahn; Yoon-Chae Nah; Yung-Eun Sung; Ki-Yun Cho; Seung-Shik Shin; Jung-Ki Park

Appl. Phys. Lett. 81, 3930–3932 (2002) https://doi.org/10.1063/1.1522478

Abstract

View articletitled, All-solid-state electrochromic device composed of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">WO</mi><mrow><mn>3</mn></mrow></msub></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">Ni</mi><mi xmlns="">(</mi><mi mathvariant="normal" xmlns="">OH</mi><msub xmlns=""><mi>)</mi><mrow><mn>2</mn></mrow></msub></math> with a <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ta</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>5</mn></mrow></msub></math> protective layer

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Robustness to optical feedback of oxide-confined versus proton-implanted vertical-cavity surface-emitting lasers

P. A. Judge; C. H. L. Quay; J. A. Hudgings

Appl. Phys. Lett. 81, 3933–3935 (2002) https://doi.org/10.1063/1.1523159

Abstract

View articletitled, Robustness to optical feedback of oxide-confined versus proton-implanted vertical-cavity surface-emitting lasers

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PLASMAS AND ELECTRICAL DISCHARGES

Mechanism for cathode spot grouping in vacuum arcs

I. I. Beilis

Appl. Phys. Lett. 81, 3936–3938 (2002) https://doi.org/10.1063/1.1523158

Abstract

View articletitled, Mechanism for cathode spot grouping in vacuum arcs

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Reflectance difference spectroscopy of an ultrathin indium arsenide layer on indium phosphide (001)

C. H. Li; Y. Sun; S. B. Visbeck; D. C. Law; R. F. Hicks

Appl. Phys. Lett. 81, 3939–3941 (2002) https://doi.org/10.1063/1.1523650

Abstract

View articletitled, Reflectance difference spectroscopy of an ultrathin indium arsenide layer on indium phosphide (001)

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Origins of field enhancement in electron field emission from ion beam synthesized SiC layers

W. M. Tsang; S. P. Wong; J. K. N. Lindner

Appl. Phys. Lett. 81, 3942–3944 (2002) https://doi.org/10.1063/1.1520715

Abstract

View articletitled, Origins of field enhancement in electron field emission from ion beam synthesized SiC layers

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Photoexcitation-electron-paramagnetic-resonance studies of the carbon vacancy in 4H-SiC

N. T. Son; B. Magnusson; E. Janzén

Appl. Phys. Lett. 81, 3945–3947 (2002) https://doi.org/10.1063/1.1522822

Abstract

View articletitled, Photoexcitation-electron-paramagnetic-resonance studies of the carbon vacancy in 4H-SiC

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Visible emission from N-rich turbostratic boron nitride thin films doped with Eu, Tb, and Tm

Q. L. Liu; F. F. Xu; T. Tanaka

Appl. Phys. Lett. 81, 3948–3950 (2002) https://doi.org/10.1063/1.1524037

Abstract

View articletitled, Visible emission from N-rich turbostratic boron nitride thin films doped with Eu, Tb, and Tm

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Fast Q-tensor method for modeling liquid crystal director configurations with defects

Gi-Dong Lee; James Anderson; Philip J. Bos

Appl. Phys. Lett. 81, 3951–3953 (2002) https://doi.org/10.1063/1.1523157

Abstract

View articletitled, Fast Q-tensor method for modeling liquid crystal director configurations with defects

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Optical anisotropy of self-assembled InGaAs quantum dots embedded in wall-shaped and air-bridge structures

T. Nakaoka; S. Kako; S. Ishida; M. Nishioka; Y. Arakawa

Appl. Phys. Lett. 81, 3954–3956 (2002) https://doi.org/10.1063/1.1522824

Abstract

View articletitled, Optical anisotropy of self-assembled InGaAs quantum dots embedded in wall-shaped and air-bridge structures

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Computational design of a material for high-efficiency spin-polarized electron source

A. Janotti; Su-Huai Wei

Appl. Phys. Lett. 81, 3957–3959 (2002) https://doi.org/10.1063/1.1521510

Abstract

View articletitled, Computational design of a material for high-efficiency spin-polarized electron source

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Growth mode and strain evolution during InN growth on GaN(0001) by molecular-beam epitaxy

Y. F. Ng; Y. G. Cao; M. H. Xie; X. L. Wang; S. Y. Tong

Appl. Phys. Lett. 81, 3960–3962 (2002) https://doi.org/10.1063/1.1523638

Abstract

View articletitled, Growth mode and strain evolution during InN growth on GaN(0001) by molecular-beam epitaxy

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Adhesion force of polymeric three-dimensional microstructures fabricated by microstereolithography

Dongmin Wu; Nicholas Fang; Cheng Sun; Xiang Zhang

Appl. Phys. Lett. 81, 3963–3965 (2002) https://doi.org/10.1063/1.1522825

Abstract

View articletitled, Adhesion force of polymeric three-dimensional microstructures fabricated by microstereolithography

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Nanothermodynamic analysis of surface effect on expansion characteristics of Ga in carbon nanotubes

Yihua Gao; Yoshio Bando

Appl. Phys. Lett. 81, 3966–3968 (2002) https://doi.org/10.1063/1.1524038

Abstract

View articletitled, Nanothermodynamic analysis of surface effect on expansion characteristics of Ga in carbon nanotubes

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Linear and nonlinear optical properties of Ag nanocluster/ ${BaTiO}_{3}$ composite films

Guang Yang; Weitian Wang; Yueliang Zhou; Huibin Lu; Guozhen Yang; Zhenghao Chen

Appl. Phys. Lett. 81, 3969–3971 (2002) https://doi.org/10.1063/1.1522832

Abstract

View articletitled, Linear and nonlinear optical properties of Ag nanocluster/<math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">BaTiO</mi><mrow><mn>3</mn></mrow></msub></math> composite films

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Origin and consequences of a high stacking fault density in epitaxial ZnO layers

D. Gerthsen; D. Litvinov; Th. Gruber; C. Kirchner; A. Waag

Appl. Phys. Lett. 81, 3972–3974 (2002) https://doi.org/10.1063/1.1523151

Abstract

View articletitled, Origin and consequences of a high stacking fault density in epitaxial ZnO layers

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Ultrashort hole capture time in Mg-doped GaN thin films

Kung-Hsuan Lin; Gia-Wei Chern; Shi-Wei Chu; Chi-Kuang Sun; Huili Xing; Yulia Smorchkova; Stacia Keller; Umesh Mishra; Steven P. DenBaars

Appl. Phys. Lett. 81, 3975–3977 (2002) https://doi.org/10.1063/1.1522827

Abstract

View articletitled, Ultrashort hole capture time in Mg-doped GaN thin films

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Formation of epitaxial Au/Ni/Au ohmic contacts to p-GaN

J. Narayan; H. Wang; T.-H. Oh; H. K. Choi; J. C. C. Fan

Appl. Phys. Lett. 81, 3978–3980 (2002) https://doi.org/10.1063/1.1524032

Abstract

View articletitled, Formation of epitaxial Au/Ni/Au ohmic contacts to p-GaN

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Scanning photoelectron microscopy study of laser-induced surface reactions in Pt/Si(001)

A. J. Nelson; M. Danailov; A. Barinov; B. Kaulich; L. Gregoratti; M. Kiskinova

Appl. Phys. Lett. 81, 3981–3983 (2002) https://doi.org/10.1063/1.1522480

Abstract

View articletitled, Scanning photoelectron microscopy study of laser-induced surface reactions in Pt/Si(001)

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Temperature dependence of the ${GaN}_{x} P_{1−x}$ band gap and effect of band crossover

G. Yu. Rudko; I. A. Buyanova; W. M. Chen; H. P. Xin; C. W. Tu

Appl. Phys. Lett. 81, 3984–3986 (2002) https://doi.org/10.1063/1.1522496

Abstract

View articletitled, Temperature dependence of the <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">GaN</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">P</mi><mrow><mtext>1−x</mtext></mrow></msub></math> band gap and effect of band crossover

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Ga(As,N) layers in the dilute N limit studied by depth-resolved capacitance spectroscopy

P. Krispin; V. Gambin; J. S. Harris; K. H. Ploog

Appl. Phys. Lett. 81, 3987–3989 (2002) https://doi.org/10.1063/1.1522823

Abstract

View articletitled, Ga(As,N) layers in the dilute N limit studied by depth-resolved capacitance spectroscopy

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Electrical characterization of acceptor levels in Be-implanted GaN

Yoshitaka Nakano; Takashi Jimbo

Appl. Phys. Lett. 81, 3990–3992 (2002) https://doi.org/10.1063/1.1523633

Abstract

View articletitled, Electrical characterization of acceptor levels in Be-implanted GaN

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Direct measurement and characterization of $n^{+}$ superhalo implants in a 120 nm gate-length Si metal–oxide–semiconductor field-effect transistor using cross-sectional scanning capacitance microscopy

P. A. Rosenthal; Y. Taur; E. T. Yu

Appl. Phys. Lett. 81, 3993–3995 (2002) https://doi.org/10.1063/1.1522819

Abstract

View articletitled, Direct measurement and characterization of <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi>n</mi><mrow><mi>+</mi></mrow></msup></math> superhalo implants in a 120 nm gate-length Si metal–oxide–semiconductor field-effect transistor using cross-sectional scanning capacitance microscopy

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Thermal stability of ion-implanted hydrogen in ZnO

K. Ip; M. E. Overberg; Y. W. Heo; D. P. Norton; S. J. Pearton; S. O. Kucheyev; C. Jagadish; J. S. Williams; R. G. Wilson; J. M. Zavada

Appl. Phys. Lett. 81, 3996–3998 (2002) https://doi.org/10.1063/1.1524033

Abstract

View articletitled, Thermal stability of ion-implanted hydrogen in ZnO

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Simultaneous observation of electron and hole velocity overshoots in an ${Al}_{0.3} {Ga}_{0.7} As$ -based $p–i–n$ semiconductor nanostructure

W. Liang; H. Lee; K. T. Tsen; O. F. Sankey; D. K. Ferry

Appl. Phys. Lett. 81, 3999–4001 (2002) https://doi.org/10.1063/1.1522497

Abstract

View articletitled, Simultaneous observation of electron and hole velocity overshoots in an <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mtext>0.3</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>0.7</mtext></mrow></msub><mi mathvariant="normal" xmlns="">As</mi></math>-based <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">p–i–n</mi></math> semiconductor nanostructure

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MAGNETISM AND SUPERCONDUCTIVITY

Diffusion mechanism of cation-exchange process for fabrication of ${HgBa}_{2} {CaCu}_{2} O_{6+δ}$ superconducting films

Y. Y. Xie; J. Z. Wu; T. Aytug; D. K. Christen; A. H. Cardona

Appl. Phys. Lett. 81, 4002–4004 (2002) https://doi.org/10.1063/1.1521574

Abstract

View articletitled, Diffusion mechanism of cation-exchange process for fabrication of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">HgBa</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">CaCu</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mtext>6+δ</mtext></mrow></msub></math> superconducting films

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Shifted hysteresis loops from magnetic nanowires

D. A. Allwood; N. Vernier; Gang Xiong; M. D. Cooke; D. Atkinson; C. C. Faulkner; R. P. Cowburn

Appl. Phys. Lett. 81, 4005–4007 (2002) https://doi.org/10.1063/1.1523634

Abstract

View articletitled, Shifted hysteresis loops from magnetic nanowires

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Fast switching in a single-domain particle under sub-Stoner–Wohlfarth switching fields

Kai-Zhong Gao; Eric D. Boerner; H. Neal Bertram

Appl. Phys. Lett. 81, 4008–4010 (2002) https://doi.org/10.1063/1.1522132

Abstract

View articletitled, Fast switching in a single-domain particle under sub-Stoner–Wohlfarth switching fields

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Oxygen-assisted room-temperature deposition of ${CoPt}_{3}$ films with perpendicular magnetic anisotropy

B. B. Maranville; F. Hellman

Appl. Phys. Lett. 81, 4011–4013 (2002) https://doi.org/10.1063/1.1523161

Abstract

View articletitled, Oxygen-assisted room-temperature deposition of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CoPt</mi><mrow><mn>3</mn></mrow></msub></math> films with perpendicular magnetic anisotropy

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Monte-Carlo simulation of electron conductance and magnetoresistance in magnetic polaron systems

J.-M. Liu; X. H. Zhou; X. Y. Chen; Z. G. Liu; Y. W. Du; N. B. Ming

Appl. Phys. Lett. 81, 4014–4016 (2002) https://doi.org/10.1063/1.1520702

Abstract

View articletitled, Monte-Carlo simulation of electron conductance and magnetoresistance in magnetic polaron systems

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Effects of ion irradiation on epitaxial Cu/Ni/Cu(001) with perpendicular magnetic anisotropy

T. G. Kim; Y. H. Shin; J. H. Song; M. C. Sung; I. S. Kim; D. G. You; J. Lee; K. Jeong; G. Y. Jeon; C. N. Whang

Appl. Phys. Lett. 81, 4017–4019 (2002) https://doi.org/10.1063/1.1515877

Abstract

View articletitled, Effects of ion irradiation on epitaxial Cu/Ni/Cu(001) with perpendicular magnetic anisotropy

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Study of diluted magnetic semiconductor: Co-doped ZnO

Hyeon-Jun Lee; Se-Young Jeong; Chae Ryong Cho; Chul Hong Park

Appl. Phys. Lett. 81, 4020–4022 (2002) https://doi.org/10.1063/1.1517405

Abstract

View articletitled, Study of diluted magnetic semiconductor: Co-doped ZnO

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Effect of substitutionally dissolved Ce in Si on the magnetic and electric properties of magnetic semiconductor ${Si}_{1−x} {Ce}_{x}$ films

T. Yokota; N. Fujimura; T. Ito

Appl. Phys. Lett. 81, 4023–4025 (2002) https://doi.org/10.1063/1.1524030

Abstract

View articletitled, Effect of substitutionally dissolved Ce in Si on the magnetic and electric properties of magnetic semiconductor <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Si</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ce</mi><mrow><mi>x</mi></mrow></msub></math> films

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Time dependence of laser-induced thermoelectric voltages in ${La}_{1−x} {Ca}_{x} {MnO}_{3}$ and ${YBa}_{2} {Cu}_{3} O_{7−δ}$ thin films

P. X. Zhang; W. K. Lee; G. Y. Zhang

Appl. Phys. Lett. 81, 4026–4028 (2002) https://doi.org/10.1063/1.1520712

Abstract

View articletitled, Time dependence of laser-induced thermoelectric voltages in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">La</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ca</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">MnO</mi><mrow><mn>3</mn></mrow></msub></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">YBa</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Cu</mi><mrow><mn>3</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mtext>7−δ</mtext></mrow></msub></math> thin films

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Boltzmann theory of engineered anisotropic magnetoresistance in (Ga,Mn)As

T. Jungwirth; M. Abolfath; Jairo Sinova; J. Kučera; A. H. MacDonald

Appl. Phys. Lett. 81, 4029–4031 (2002) https://doi.org/10.1063/1.1523160

Abstract

View articletitled, Boltzmann theory of engineered anisotropic magnetoresistance in (Ga,Mn)As

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Composition and temperature dependence of the magnetocrystalline anisotropy in ${Ni}_{2+x} {Mn}_{1+y} {Ga}_{1+z} (x+y+z=0)$ Heusler alloys

F. Albertini; L. Pareti; A. Paoluzi; L. Morellon; P. A. Algarabel; M. R. Ibarra; L. Righi

Appl. Phys. Lett. 81, 4032–4034 (2002) https://doi.org/10.1063/1.1525071

Abstract

View articletitled, Composition and temperature dependence of the magnetocrystalline anisotropy in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ni</mi><mrow><mtext>2+x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Mn</mi><mrow><mtext>1+y</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>1+z</mtext></mrow></msub><mtext xmlns=""> (x+y+z=0)</mtext></math> Heusler alloys

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DIELECTRICS AND FERROELECTRICITY

Temperature dependence of ferroelectric and dielectric properties of ${PbZr}_{0.5} {Ti}_{0.5} O_{3}$ thin film based capacitors

X. J. Meng; J. L. Sun; X. G. Wang; T. Lin; J. H. Ma; S. L. Guo; J. H. Chu

Appl. Phys. Lett. 81, 4035–4037 (2002) https://doi.org/10.1063/1.1522833

Abstract

View articletitled, Temperature dependence of ferroelectric and dielectric properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">PbZr</mi><mrow><mtext>0.5</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ti</mi><mrow><mtext>0.5</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>3</mn></mrow></msub></math> thin film based capacitors

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Effect of deuterium postmetal annealing on the reliability characteristics of an atomic-layer-deposited ${HfO}_{2} / {SiO}_{2}$ stack gate dielectrics

Hyunjun Sim; Hyunsang Hwang

Appl. Phys. Lett. 81, 4038–4039 (2002) https://doi.org/10.1063/1.1523636

Abstract

View articletitled, Effect of deuterium postmetal annealing on the reliability characteristics of an atomic-layer-deposited <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">HfO</mi><mrow><mn>2</mn></mrow></msub><mi xmlns="">/</mi><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mn>2</mn></mrow></msub></math> stack gate dielectrics

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Relationships between macroscopic polarization hysteresis and local piezoresponse of fatigued $Pb (Zr,Ti) O_{3}$ films within a Landau theory-based lattice model

Dan Ricinschi; Masanori Okuyama

Appl. Phys. Lett. 81, 4040–4042 (2002) https://doi.org/10.1063/1.1523153

Abstract

View articletitled, Relationships between macroscopic polarization hysteresis and local piezoresponse of fatigued <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">Pb</mi><mi xmlns="">(</mi><mi mathvariant="normal" xmlns="">Zr,Ti</mi><mi xmlns="">)</mi><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>3</mn></mrow></msub></math> films within a Landau theory-based lattice model

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Acoustic anomalies and central peak in ${SrBi}_{2} {Ta}_{2} O_{9}$ single crystals studied by micro-Brillouin scattering

Jae-Hyeon Ko; Anwar Hushur; Seiji Kojima; Bryan C. Sih; Zuo-Guang Ye

Appl. Phys. Lett. 81, 4043–4045 (2002) https://doi.org/10.1063/1.1524036

Abstract

View articletitled, Acoustic anomalies and central peak in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SrBi</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ta</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>9</mn></mrow></msub></math> single crystals studied by micro-Brillouin scattering

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Bipolaron dynamics in pure and doped ${SrTiO}_{3}$ and ${KTaO}_{3}$ perovskite systems

A. Levstik; C. Filipič; V. Bobnar; R. Pirc

Appl. Phys. Lett. 81, 4046–4048 (2002) https://doi.org/10.1063/1.1522828

Abstract

View articletitled, Bipolaron dynamics in pure and doped <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SrTiO</mi><mrow><mn>3</mn></mrow></msub></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">KTaO</mi><mrow><mn>3</mn></mrow></msub></math> perovskite systems

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Recursive asymptotic stiffness matrix method for analysis of surface acoustic wave devices on layered piezoelectric media

L. Wang; S. I. Rokhlin

Appl. Phys. Lett. 81, 4049–4051 (2002) https://doi.org/10.1063/1.1522831

Abstract

View articletitled, Recursive asymptotic stiffness matrix method for analysis of surface acoustic wave devices on layered piezoelectric media

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High remanent polarization in ${Sr}_{1−x} {Ca}_{x} {Bi}_{2} {Ta}_{2} O_{9}$ ferroelectric thin films

Rasmi R. Das; P. Bhattacharya; W. Pérez; Ram S. Katiyar

Appl. Phys. Lett. 81, 4052–4054 (2002) https://doi.org/10.1063/1.1523154

Abstract

View articletitled, High remanent polarization in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Sr</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ca</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Bi</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ta</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>9</mn></mrow></msub></math> ferroelectric thin films

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NANOSCALE SCIENCE AND DESIGN

Dynamics of the tip–sample interaction in near-field scanning optical microscopy and the implications for shear force as an accurate distance measure

C. L. Jahncke; S. H. Huerth; Beverly Clark, III; H. D. Hallen

Appl. Phys. Lett. 81, 4055–4057 (2002) https://doi.org/10.1063/1.1520711

Abstract

View articletitled, Dynamics of the tip–sample interaction in near-field scanning optical microscopy and the implications for shear force as an accurate distance measure

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Indium supply from triisopropylindium onto a GaAs(001) surface at room temperature

H. Kuramochi; J. Cui; A. Ohtake; M. Ozeki; M. Kishida; H. Uchida; H. Akinaga

Appl. Phys. Lett. 81, 4058–4060 (2002) https://doi.org/10.1063/1.1523652

Abstract

View articletitled, Indium supply from triisopropylindium onto a GaAs(001) surface at room temperature

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Hot wire chemical vapor deposition of isolated carbon single-walled nanotubes

A. H. Mahan; J. L. Alleman; M. J. Heben; P. A. Parilla; K. M. Jones; A. C. Dillon

Appl. Phys. Lett. 81, 4061–4063 (2002) https://doi.org/10.1063/1.1518771

Abstract

View articletitled, Hot wire chemical vapor deposition of isolated carbon single-walled nanotubes

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Experimental and theoretical study of third-order harmonic generation in carbon nanotubes

C. Stanciu; R. Ehlich; V. Petrov; O. Steinkellner; J. Herrmann; I. V. Hertel; G. Ya. Slepyan; A. A. Khrutchinski; S. A. Maksimenko; F. Rotermund; E. E. B. Campbell; F. Rohmund

Appl. Phys. Lett. 81, 4064–4066 (2002) https://doi.org/10.1063/1.1521508

Abstract

View articletitled, Experimental and theoretical study of third-order harmonic generation in carbon nanotubes

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Ambipolar field-effect transistor behavior of ${Gd@C}_{82}$ metallofullerene peapods

T. Shimada; T. Okazaki; R. Taniguchi; T. Sugai; H. Shinohara; K. Suenaga; Y. Ohno; S. Mizuno; S. Kishimoto; T. Mizutani

Appl. Phys. Lett. 81, 4067–4069 (2002) https://doi.org/10.1063/1.1522482

Abstract

View articletitled, Ambipolar field-effect transistor behavior of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Gd@C</mi><mrow><mn>82</mn></mrow></msub></math> metallofullerene peapods

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DEVICE PHYSICS

High-efficiency electrophosphorescent organic light-emitting diodes with double light-emitting layers

X. Zhou; D. S. Qin; M. Pfeiffer; J. Blochwitz-Nimoth; A. Werner; J. Drechsel; B. Maennig; K. Leo; M. Bold; P. Erk; H. Hartmann

Appl. Phys. Lett. 81, 4070–4072 (2002) https://doi.org/10.1063/1.1522495

Abstract

View articletitled, High-efficiency electrophosphorescent organic light-emitting diodes with double light-emitting layers

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Film heterostructure with soft ferromagnetics to enhance low-field magnetoresistance

G. L. Yuan; J.-M. Liu; L. Zhou; S. T. Zhang; X. Y. Chen; Z. G. Liu

Appl. Phys. Lett. 81, 4073–4075 (2002) https://doi.org/10.1063/1.1522130

Abstract

View articletitled, Film heterostructure with soft ferromagnetics to enhance low-field magnetoresistance

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APPLIED BIOPHYSICS

Dispersive coherence-enhanced radiology: Experimental test and modeling

A. Groso; G. Margaritondo; Y. Hwu; Wen-Li Tsai; J. H. Je; B. Lai

Appl. Phys. Lett. 81, 4076–4078 (2002) https://doi.org/10.1063/1.1524292

Abstract

View articletitled, Dispersive coherence-enhanced radiology: Experimental test and modeling

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INTERDISCIPLINARY AND GENERAL PHYSICS

Using waviness to reduce thermal warpage in printed circuit boards

Joachim L. Grenestedt; Parsaoran Hutapea

Appl. Phys. Lett. 81, 4079–4081 (2002) https://doi.org/10.1063/1.1523635

Abstract

View articletitled, Using waviness to reduce thermal warpage in printed circuit boards

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ERRATA

Erratum: “Oxygen-related minority-carrier trapping centers in p-type Czochralski silicon” [Appl. Phys. Lett. 80, 4395 (2002)]

Jan Schmidt; Karsten Bothe; Rudolf Hezel

Appl. Phys. Lett. 81, 4082 (2002) https://doi.org/10.1063/1.1524028

View articletitled, Erratum: “Oxygen-related minority-carrier trapping centers in p-type Czochralski silicon” [Appl. Phys. Lett. 80, 4395 (2002)]

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Issues

LASERS, OPTICS, AND OPTOELECTRONICS

PLASMAS AND ELECTRICAL DISCHARGES

STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

ELECTRONIC TRANSPORT AND SEMICONDUCTORS

MAGNETISM AND SUPERCONDUCTIVITY

DIELECTRICS AND FERROELECTRICITY

NANOSCALE SCIENCE AND DESIGN

DEVICE PHYSICS

APPLIED BIOPHYSICS

INTERDISCIPLINARY AND GENERAL PHYSICS

ERRATA

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