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Volume 81, Issue 19

4 November 2002

Applied Physics Letters Cover Image for Volume 81, Issue 19

ISSN 0003-6951

EISSN 1077-3118

In this Issue

LASERS, OPTICS, AND OPTOELECTRONICS
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
ELECTRONIC TRANSPORT AND SEMICONDUCTORS
MAGNETISM AND SUPERCONDUCTIVITY
DIELECTRICS AND FERROELECTRICITY
NANOSCALE SCIENCE AND DESIGN
DEVICE PHYSICS
INTERDISCIPLINARY AND GENERAL PHYSICS
COMMENTS
ERRATA

LASERS, OPTICS, AND OPTOELECTRONICS

Strong exciton–photon coupling in a low-Q all-metal mirror microcavity

P. A. Hobson; W. L. Barnes; D. G. Lidzey; G. A. Gehring; D. M. Whittaker; M. S. Skolnick; S. Walker

Appl. Phys. Lett. 81, 3519–3521 (2002) https://doi.org/10.1063/1.1517714

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Direct-UV-written buried channel waveguide lasers in direct-bonded intersubstrate ion-exchanged neodymium-doped germano-borosilicate glass

Corin B. E. Gawith; Alexander Fu; Tajamal Bhutta; Ping Hua; David P. Shepherd; Elizabeth R. Taylor; Peter G. R. Smith; Daniel Milanese; Monica Ferraris

Appl. Phys. Lett. 81, 3522–3524 (2002) https://doi.org/10.1063/1.1519103

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Coherent integration of 0.5 GHz spectral holograms at 1536 nm using dynamic biphase codes

Z. Cole; T. Böttger; R. Krishna Mohan; R. Reibel; W. R. Babbitt; R. L. Cone; K. D. Merkel

Appl. Phys. Lett. 81, 3525–3527 (2002) https://doi.org/10.1063/1.1518152

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Small molecule organic light-emitting diodes can exhibit high performance without conventional hole transport layers

Qinglan Huang; Ji Cui; He Yan; Jonathan G. C. Veinot; Tobin J. Marks

Appl. Phys. Lett. 81, 3528–3530 (2002) https://doi.org/10.1063/1.1517397

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All-optical excitation and detection of microelectrical-mechanical systems

J. E. Graebner; S. Pau; P. L. Gammel

Appl. Phys. Lett. 81, 3531–3533 (2002) https://doi.org/10.1063/1.1519351

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Amplified spontaneous emission and efficient tunable laser emission from a substituted thiophene-based oligomer

Dario Pisignano; Marco Anni; Giuseppe Gigli; Roberto Cingolani; Margherita Zavelani-Rossi; Guglielmo Lanzani; Giovanna Barbarella; Laura Favaretto

Appl. Phys. Lett. 81, 3534–3536 (2002) https://doi.org/10.1063/1.1519735

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Inhomogeneous nanoscale polymer-dispersed liquid crystals with gradient refractive index

Hongwen Ren; Shin-Tson Wu

Appl. Phys. Lett. 81, 3537–3539 (2002) https://doi.org/10.1063/1.1519102

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High-efficiency organic light-emitting diodes with tunable light emission by using aromatic diamine/5,6,11,12-tetraphenylnaphthacene multiple quantum wells

Yong Qiu; Yudi Gao; Liduo Wang; Peng Wei; Lian Duan; Deqiang Zhang; Guifang Dong

Appl. Phys. Lett. 81, 3540–3542 (2002) https://doi.org/10.1063/1.1519348

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

How to affect stacking fault energy and structure by atom relaxation

J. Cai; C. Lu; P. H. Yap; Y. Y. Wang

Appl. Phys. Lett. 81, 3543–3545 (2002) https://doi.org/10.1063/1.1519106

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Effect of high-density plasma etching on the optical properties and surface stoichiometry of ZnO

K. Ip; K. H. Baik; M. E. Overberg; E. S. Lambers; Y. W. Heo; D. P. Norton; S. J. Pearton; F. Ren; J. M. Zavada

Appl. Phys. Lett. 81, 3546–3548 (2002) https://doi.org/10.1063/1.1519095

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High epitaxial quality $Y_{2} O_{3}$ high-κ dielectric on vicinal Si(001) surfaces

G. Apostolopoulos; G. Vellianitis; A. Dimoulas; M. Alexe; R. Scholz; M. Fanciulli; D. T. Dekadjevi; C. Wiemer

Appl. Phys. Lett. 81, 3549–3551 (2002) https://doi.org/10.1063/1.1519727

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Influence of the quantum-well shape on the light emission characteristics of InGaN/GaN quantum-well structures and light-emitting diodes

H. W. Shim; R. J. Choi; S. M. Jeong; Le Van Vinh; C.-H. Hong; E.-K. Suh; H. J. Lee; Y.-W. Kim; Y. G. Hwang

Appl. Phys. Lett. 81, 3552–3554 (2002) https://doi.org/10.1063/1.1519725

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Surface dihydrides on Ge(100): A scanning tunneling microscopy study

Jae Yeol Maeng; Jun Young Lee; Young Eun Cho; Sehun Kim; Sam K. Jo

Appl. Phys. Lett. 81, 3555–3557 (2002) https://doi.org/10.1063/1.1520329

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Control of crystallographic tilt in GaN grown on Si (111) by cantilever epitaxy

T. M. Katona; J. S. Speck; S. P. DenBaars

Appl. Phys. Lett. 81, 3558–3560 (2002) https://doi.org/10.1063/1.1519943

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Potential sputtering of proton from hydrogen-terminated Si(100) surfaces induced with slow highly charged ions

K. Kuroki; N. Okabayashi; H. Torii; K. Komaki; Y. Yamazaki

Appl. Phys. Lett. 81, 3561–3563 (2002) https://doi.org/10.1063/1.1520335

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Atomic and electronic structures of doped grain boundaries in ${SrTiO}_{3}$

Hyunju Chang; Youngmin Choi; Jae Do Lee; Hongsuk Yi

Appl. Phys. Lett. 81, 3564–3566 (2002) https://doi.org/10.1063/1.1519960

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Coiling-chirality changes in carbon microcoils obtained by catalyzed pyrolysis of acetylene and its mechanism

Shaoming Yang; Xiuqin Chen; Seiji Motojima

Appl. Phys. Lett. 81, 3567–3569 (2002) https://doi.org/10.1063/1.1516612

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Preferential carbon etching by hydrogen inside hexagonal voids of 6H-SiC(0001)

Dirk Sander; Wulf Wulfhekel; Margrit Hanbücken; Serge Nitsche; Jean Pierre Palmari; Frédéric Dulot; François Arnaud d’Avitaya; André Leycuras

Appl. Phys. Lett. 81, 3570–3572 (2002) https://doi.org/10.1063/1.1519962

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Atomic relocation processes in impurity-free disordered $p$ -GaAs epilayers studied by deep level transient spectroscopy

P. N. K. Deenapanray; A. Martin; S. Doshi; H. H. Tan; C. Jagadish

Appl. Phys. Lett. 81, 3573–3575 (2002) https://doi.org/10.1063/1.1519728

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Electron transport through strongly coupled AlInP/GaInP superlattices

R. E. Martı́nez, II; I. Appelbaum; C. V. Reddy; R. Sheth; K. J. Russell; V. Narayanamurti; J.-H. Ryou; U. Chowdhury; R. D. Dupuis

Appl. Phys. Lett. 81, 3576–3578 (2002) https://doi.org/10.1063/1.1519350

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Scanning Kelvin force microscopy imaging of surface potential variations near threading dislocations in GaN

J. W. P. Hsu; H. M. Ng; A. M. Sergent; S. N. G. Chu

Appl. Phys. Lett. 81, 3579–3581 (2002) https://doi.org/10.1063/1.1519732

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Reduction of effective dielectric constant of gate insulator by low-resistivity electrodes

Kunio Saito; Yoshito Jin; Masaru Shimada

Appl. Phys. Lett. 81, 3582–3584 (2002) https://doi.org/10.1063/1.1519736

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Contactless measurement of electrical conductivity of semiconductor wafers using the reflection of millimeter waves

Yang Ju; Kojiro Inoue; Masumi Saka; Hiroyuki Abé

Appl. Phys. Lett. 81, 3585–3587 (2002) https://doi.org/10.1063/1.1520339

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Measurements of anisotropic thermoelectric properties in superlattices

B. Yang; W. L. Liu; J. L. Liu; K. L. Wang; G. Chen

Appl. Phys. Lett. 81, 3588–3590 (2002) https://doi.org/10.1063/1.1515876

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Location of holes in silicon-rich oxide as memory states

I. Crupi; S. Lombardo; E. Rimini; C. Gerardi; B. Fazio; M. Melanotte

Appl. Phys. Lett. 81, 3591–3593 (2002) https://doi.org/10.1063/1.1520340

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Ground state splitting of vertically stacked indium arsenide self-assembled quantum dots

Shuwei Li; Kazuto Koike

Appl. Phys. Lett. 81, 3594–3596 (2002) https://doi.org/10.1063/1.1515365

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MAGNETISM AND SUPERCONDUCTIVITY

${La}_{1−x} {Ba}_{x} {MnO}_{3}$ epitaxial thin films by pulsed-laser deposition: A consequence of strain stabilization

A. K. Pradhan; D. R. Sahu; B. K. Roul; Y. Feng

Appl. Phys. Lett. 81, 3597–3599 (2002) https://doi.org/10.1063/1.1518157

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Realization and properties of ${MgB}_{2}$ metal-masked ion damage junctions

D.-J. Kang; N. H. Peng; R. Webb; C. Jeynes; J. H. Yun; S. H. Moon; B. Oh; G. Burnell; E. J. Tarte; D. F. Moore; M. G. Blamire

Appl. Phys. Lett. 81, 3600–3602 (2002) https://doi.org/10.1063/1.1519965

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The superconducting gap of in situ ${MgB}_{2}$ thin films by microwave surface impedance measurements

N. Hakim; C. Kusko; S. Sridhar; A. Soukiassian; X. H. Zeng; X. X. Xi

Appl. Phys. Lett. 81, 3603–3605 (2002) https://doi.org/10.1063/1.1517181

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Ferromagnetism in Cr-doped Ge

Sungyoul Choi; Soon Cheol Hong; Sunglae Cho; Yunki Kim; John B. Ketterson; Chi-Un Jung; K. Rhie; Bong-Jun Kim; Y. C. Kim

Appl. Phys. Lett. 81, 3606–3608 (2002) https://doi.org/10.1063/1.1516613

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Magnetothermopower and magnon-assisted transport in ferromagnetic tunnel junctions

Edward McCann; Vladimir I. Fal’ko

Appl. Phys. Lett. 81, 3609–3611 (2002) https://doi.org/10.1063/1.1519730

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Control of magnetization reversal process with pinning layer in FePt thin films

Z. L. Zhao; J. P. Wang; J. S. Chen; J. Ding

Appl. Phys. Lett. 81, 3612–3614 (2002) https://doi.org/10.1063/1.1518161

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DIELECTRICS AND FERROELECTRICITY

Breakdown-induced negative charge in ultrathin ${SiO}_{2}$ films measured by atomic force microscopy

M. Porti; M. Nafrı́a; M. C. Blüm; X. Aymerich; S. Sadewasser

Appl. Phys. Lett. 81, 3615–3617 (2002) https://doi.org/10.1063/1.1519357

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Thermal stability of $({HfO}_{2})_{x} ({Al}_{2} O_{3})_{1−x}$ on Si

H. Y. Yu; N. Wu; M. F. Li; Chunxiang Zhu; B. J. Cho; D.-L. Kwong; C. H. Tung; J. S. Pan; J. W. Chai; W. D. Wang; D. Z. Chi; C. H. Ang; J. Z. Zheng; S. Ramanathan

Appl. Phys. Lett. 81, 3618–3620 (2002) https://doi.org/10.1063/1.1519733

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Dielectric and ferroelectric properties of highly oriented $(Pb,Nb)(Zr,Sn,Ti) O_{3}$ thin films grown by a sol-gel process

Zhai Jiwei; M. H. Cheung; Zheng Kui Xu; Xin Li; Haydn Chen; Eugene V. Colla; T. B. Wu

Appl. Phys. Lett. 81, 3621–3623 (2002) https://doi.org/10.1063/1.1519944

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Ferroelectric ${BaPbO}_{3} / {PbZr}_{0.53} {Ti}_{0.47} / {BaPbO}_{3}$ heterostructures

Chun-Sheng Liang; Jenn-Ming Wu; Ming-Chu Chang

Appl. Phys. Lett. 81, 3624–3626 (2002) https://doi.org/10.1063/1.1520332

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${HfO}_{2} / {SiO}_{2}$ interface chemistry studied by synchrotron radiation x-ray photoelectron spectroscopy

O. Renault; D. Samour; J.-F. Damlencourt; D. Blin; F. Martin; S. Marthon; N. T. Barrett; P. Besson

Appl. Phys. Lett. 81, 3627–3629 (2002) https://doi.org/10.1063/1.1520334

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Thermal stability of atomic-layer-deposited ${HfO}_{2}$ thin films on the ${SiN}_{x}$ -passivated Si substrate

Moonju Cho; Jaehoo Park; Hong Bae Park; Cheol Seong Hwang; Jaehack Jeong; Kwang Soo Hyun; Young-Wug Kim; Chang-Bong Oh; Hee-Sung Kang

Appl. Phys. Lett. 81, 3630–3632 (2002) https://doi.org/10.1063/1.1520333

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Observation of domain texture in poled $Pb ({Mg}_{1/3} {Nb}_{2/3}) O_{3} - {PbTiO}_{3}$ crystals

J. F. Li; B. Ruette; D. Viehland

Appl. Phys. Lett. 81, 3633–3635 (2002) https://doi.org/10.1063/1.1519352

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NANOSCALE SCIENCE AND DESIGN

Lateral diffusion of titanium disilicide as a route to contacting hybrid Si/organic nanostructures

V. Palermo; M. Buchanan; A. Bezinger; R. A. Wolkow

Appl. Phys. Lett. 81, 3636–3638 (2002) https://doi.org/10.1063/1.1519959

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Size control and charge storage mechanism of germanium nanocrystals in a metal-insulator-semiconductor structure

L. W. Teo; W. K. Choi; W. K. Chim; V. Ho; C. M. Moey; M. S. Tay; C. L. Heng; Y. Lei; D. A. Antoniadis; E. A. Fitzgerald

Appl. Phys. Lett. 81, 3639–3641 (2002) https://doi.org/10.1063/1.1519355

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Exciton formation dynamics in crescent-shaped Quantum Wires

T. Yasuhira; K. Komori; R. Akimoto; X. L. Wang; M. Watanabe; M. Ogura

Appl. Phys. Lett. 81, 3642–3644 (2002) https://doi.org/10.1063/1.1517721

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Room-temperature single-electron tunneling in conducting polypyrrole nanotube

S. K. Saha

Appl. Phys. Lett. 81, 3645–3647 (2002) https://doi.org/10.1063/1.1519104

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Field emission from well-aligned zinc oxide nanowires grown at low temperature

C. J. Lee; T. J. Lee; S. C. Lyu; Y. Zhang; H. Ruh; H. J. Lee

Appl. Phys. Lett. 81, 3648–3650 (2002) https://doi.org/10.1063/1.1518810

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Fabrication of nanometric single zinc and zinc oxide dots by the selective photodissociation of adsorption-phase diethylzinc using a nonresonant optical near field

T. Yatsui; T. Kawazoe; M. Ueda; Y. Yamamoto; M. Kourogi; M. Ohtsu

Appl. Phys. Lett. 81, 3651–3653 (2002) https://doi.org/10.1063/1.1520337

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Nanoscale wire formation on sputter-eroded surfaces

J. Kim; B. Kahng; A.-L. Barabási

Appl. Phys. Lett. 81, 3654–3656 (2002) https://doi.org/10.1063/1.1519963

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Fabrication of nanostructures with long-range order using block copolymer lithography

J. Y. Cheng; C. A. Ross; E. L. Thomas; Henry I. Smith; G. J. Vancso

Appl. Phys. Lett. 81, 3657–3659 (2002) https://doi.org/10.1063/1.1519356

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Self-aligned gated field emission devices using single carbon nanofiber cathodes

M. A. Guillorn; A. V. Melechko; V. I. Merkulov; D. K. Hensley; M. L. Simpson; D. H. Lowndes

Appl. Phys. Lett. 81, 3660–3662 (2002) https://doi.org/10.1063/1.1517718

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Near-field two-photon nanolithography using an apertureless optical probe

Xiaobo Yin; Nicholas Fang; Xiang Zhang; Ignacio B. Martini; Benjamin J. Schwartz

Appl. Phys. Lett. 81, 3663–3665 (2002) https://doi.org/10.1063/1.1519329

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DEVICE PHYSICS

AlGaN single-quantum-well light-emitting diodes with emission at 285 nm

V. Adivarahan; S. Wu; A. Chitnis; R. Pachipulusu; V. Mandavilli; M. Shatalov; J. P. Zhang; M. Asif Khan; G. Tamulaitis; A Sereika; I. Yilmaz; M. S. Shur; R. Gaska

Appl. Phys. Lett. 81, 3666–3668 (2002) https://doi.org/10.1063/1.1519100

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Prevention of electric breakdown during ion bombardment of organic insulators using a cluster ion beam

K. Hirata; Y. Saitoh; K. Narumi; Y. Kobayashi

Appl. Phys. Lett. 81, 3669–3671 (2002) https://doi.org/10.1063/1.1520336

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Modeling of ballistic nanoscale metal-oxide-semiconductor field effect transistors

G. Fiori; G. Iannaccone

Appl. Phys. Lett. 81, 3672–3674 (2002) https://doi.org/10.1063/1.1519349

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Type II InAs/GaSb superlattice photovoltaic detectors with cutoff wavelength approaching 32 μm

Yajun Wei; Aaron Gin; Manijeh Razeghi; Gail J. Brown

Appl. Phys. Lett. 81, 3675–3677 (2002) https://doi.org/10.1063/1.1520699

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INTERDISCIPLINARY AND GENERAL PHYSICS

Transient photoinduced diffractive solid immersion lens for infrared microscopy

K. Cohn; D. Simanovskii; T. Smith; D. Palanker

Appl. Phys. Lett. 81, 3678–3680 (2002) https://doi.org/10.1063/1.1519729

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COMMENTS

Comment on “Reliable extraction of the energy distribution of ${Si/SiO}_{2}$ interface traps in ultrathin metal–oxide–semiconductor structures” [Appl. Phys. Lett. 80, 3952 (2002)]

Per Lundgren; Einar Ö. Sveinbjörnsson; Halldor Ö. Olafsson

Appl. Phys. Lett. 81, 3681–3682 (2002) https://doi.org/10.1063/1.1519330

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Response to “Comment on ‘Reliable extraction of the energy distribution of ${Si/SiO}_{2}$ interface traps in ultrathin metal–oxide–semiconductor structures’ ” [Appl. Phys. Lett. 81, 3681 (2002)]

Quazi Deen Mohd Khosru; Anri Nakajima; Takashi Yoshimoto; Shin Yokoyama

Appl. Phys. Lett. 81, 3683–3684 (2002) https://doi.org/10.1063/1.1519331

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ERRATA

Erratum/Apology: “Electron beam-induced carbon masking for electrodeposition on semiconductor surfaces” [Appl. Phys. Lett. 78, 2940 (2001)]

T. Djenizian; L. Santinacci; P. Schmuki

Appl. Phys. Lett. 81, 3685 (2002) https://doi.org/10.1063/1.1521253

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“Nanoscale patterning of Si(110) surfaces by scratching through the native oxide layer using atomic force microscope” [Appl. Phys. Lett. 79, 1882 (2001)]

L. Santinacci; T. Djenizian; P. Schmuki

Appl. Phys. Lett. 81, 3685 (2002) https://doi.org/10.1063/1.1528350

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