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Issues
21 October 2002
ISSN 0003-6951
EISSN 1077-3118
In this Issue
LASERS, OPTICS, AND OPTOELECTRONICS
Optical speedup at transparency of the gain recovery in semiconductor optical amplifiers
Appl. Phys. Lett. 81, 3119–3121 (2002)
https://doi.org/10.1063/1.1516634
Harmonic frequency locking in a semiconductor laser with delayed negative optoelectronic feedback
Appl. Phys. Lett. 81, 3128–3130 (2002)
https://doi.org/10.1063/1.1516238
Fully transparent, organic light-emitting electrochemical cells
Appl. Phys. Lett. 81, 3131–3133 (2002)
https://doi.org/10.1063/1.1516610
Cascaded electro-optic scanning of laser light over large angles using domain microengineered ferroelectrics
David A. Scrymgeour; Alok Sharan; Venkatraman Gopalan; Kevin T. Gahagan; Joanna L. Casson; Robert Sander; Jeanne M. Robinson; Fikri Muhammad; Premanand Chandramani; Fouad Kiamilev
Appl. Phys. Lett. 81, 3140–3142 (2002)
https://doi.org/10.1063/1.1516232
Super-resolution digital holographic imaging method
Appl. Phys. Lett. 81, 3143–3145 (2002)
https://doi.org/10.1063/1.1517402
Room-temperature 2.5 μm InGaAsSb/AlGaAsSb diode lasers emitting 1 W continuous waves
Appl. Phys. Lett. 81, 3146–3148 (2002)
https://doi.org/10.1063/1.1517176
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
Nanosecond time-resolved multiprobe imaging of laser damage in transparent solids
Appl. Phys. Lett. 81, 3149–3151 (2002)
https://doi.org/10.1063/1.1511536
Microstructure of GaAs/GaN interfaces produced by direct wafer fusion
Appl. Phys. Lett. 81, 3152–3154 (2002)
https://doi.org/10.1063/1.1515116
Formation of interface defects by enhanced impurity diffusion in microcrystalline silicon solar cells
Appl. Phys. Lett. 81, 3155–3157 (2002)
https://doi.org/10.1063/1.1514396
Optical properties of donor-triad cluster in GaAs and GaN
Appl. Phys. Lett. 81, 3158–3160 (2002)
https://doi.org/10.1063/1.1515121
Carrier diffusion and radiative recombination in CdTe thin films
Appl. Phys. Lett. 81, 3161–3163 (2002)
https://doi.org/10.1063/1.1515882
Power dependence of defect formation in glass by laser irradiation
Appl. Phys. Lett. 81, 3164–3166 (2002)
https://doi.org/10.1063/1.1514395
X-ray diffuse scattering study of the kinetics of stacking fault growth and annihilation in boron-implanted silicon
Appl. Phys. Lett. 81, 3167–3169 (2002)
https://doi.org/10.1063/1.1516239
Pressure behavior of Te isoelectronic centers in ZnS:Te
Appl. Phys. Lett. 81, 3170–3172 (2002)
https://doi.org/10.1063/1.1517171
Chemical structure of Al/LiF/Alq interfaces in organic light-emitting diodes
Appl. Phys. Lett. 81, 3173–3175 (2002)
https://doi.org/10.1063/1.1516858
Template-directed convective assembly of three-dimensional face-centered-cubic colloidal crystals
J. Zhang; A. Alsayed; K. H. Lin; S. Sanyal; F. Zhang; W.-J. Pao; V. S. K. Balagurusamy; P. A. Heiney; A. G. Yodh
Appl. Phys. Lett. 81, 3176–3178 (2002)
https://doi.org/10.1063/1.1516614
Optical properties of the neodymium-containing transparent dielectrics for plasma display panel
Appl. Phys. Lett. 81, 3179–3181 (2002)
https://doi.org/10.1063/1.1516862
Structural studies of by reciprocal space mapping
Appl. Phys. Lett. 81, 3185–3187 (2002)
https://doi.org/10.1063/1.1516231
ELECTRONIC TRANSPORT AND SEMICONDUCTORS
In situ measurements of GaN photoluminescence at metal and electrolyte contacts
Appl. Phys. Lett. 81, 3191–3193 (2002)
https://doi.org/10.1063/1.1518156
GaN homoepitaxy on freestanding oriented GaN substrates
C. Q. Chen; M. E. Gaevski; W. H. Sun; E. Kuokstis; J. P. Zhang; R. S. Q. Fareed; H. M. Wang; J. W. Yang; G. Simin; M. A. Khan; Herbert-Paul Maruska; David W. Hill; Mitch M. C. Chou; Bruce Chai
Appl. Phys. Lett. 81, 3194–3196 (2002)
https://doi.org/10.1063/1.1516230
Encapsulation of phosphorus dopants in silicon for the fabrication of a quantum computer
Appl. Phys. Lett. 81, 3197–3199 (2002)
https://doi.org/10.1063/1.1516859
Coexistence of the type ordered structure and the fine modulation in epilayers grown on GaAs substrates
Appl. Phys. Lett. 81, 3200–3202 (2002)
https://doi.org/10.1063/1.1517177
Density-dependent critical currents in quantum-well-coupled weak links
Appl. Phys. Lett. 81, 3203–3205 (2002)
https://doi.org/10.1063/1.1517174
MAGNETISM AND SUPERCONDUCTIVITY
Possible solution of the grain-boundary problem for applications of high- superconductors
Appl. Phys. Lett. 81, 3209–3211 (2002)
https://doi.org/10.1063/1.1516831
DIELECTRICS AND FERROELECTRICITY
Dielectric properties of sol–gel-derived thin-film composites
Appl. Phys. Lett. 81, 3212–3214 (2002)
https://doi.org/10.1063/1.1515879
Scanning force microscopy investigation of the interface
Appl. Phys. Lett. 81, 3215–3217 (2002)
https://doi.org/10.1063/1.1512961
Oxygen tracer studies of ferroelectric fatigue in thin films
Lawrence F. Schloss; Paul C. McIntyre; Bryan C. Hendrix; Steven M. Bilodeau; Jeffrey F. Roeder; Stephen R. Gilbert
Appl. Phys. Lett. 81, 3218–3220 (2002)
https://doi.org/10.1063/1.1516628
Ferroelectric properties of (117)- and (001)-oriented polycrystalline thin films
Appl. Phys. Lett. 81, 3221–3223 (2002)
https://doi.org/10.1063/1.1516234
Dependence of ferroelectric performance of sol–gel-derived thin films on bottom-Pt-electrode thickness
Ji-Eun Lim; Dong-Yeon Park; Jae Kyeong Jeong; Gregor Darlinski; Hyeong Joon Kim; Cheol Seong Hwang; Seung-Hyun Kim; Chang-Young Koo; Hyun-Jung Woo; Dong-Su Lee; Jowoong Ha
Appl. Phys. Lett. 81, 3224–3226 (2002)
https://doi.org/10.1063/1.1516830
Platinum-assisted phase transition in bismuth-based layer-structured ferroelectric thin films
Appl. Phys. Lett. 81, 3227–3229 (2002)
https://doi.org/10.1063/1.1517179
Role of grain boundaries on hydrogen-induced degradation in lead zirconate titanate thin films
Appl. Phys. Lett. 81, 3230–3232 (2002)
https://doi.org/10.1063/1.1516233
NANOSCALE SCIENCE AND DESIGN
Periodic array of intramolecular junctions of silicon nanowires
Appl. Phys. Lett. 81, 3233–3235 (2002)
https://doi.org/10.1063/1.1514399
Growth of self-assembled GaN quantum dots via the vapor–liquid–solid mechanism
Appl. Phys. Lett. 81, 3236–3238 (2002)
https://doi.org/10.1063/1.1514394
Light emission from the shadows: Surface plasmon nano-optics at near and far fields
S. C. Hohng; Y. C. Yoon; D. S. Kim; V. Malyarchuk; R. Müller; Ch. Lienau; J. W. Park; K. H. Yoo; J. Kim; H. Y. Ryu; Q. H. Park
Appl. Phys. Lett. 81, 3239–3241 (2002)
https://doi.org/10.1063/1.1515134
Electroluminescence at 1.54 μm in Er-doped Si nanocluster-based devices
F. Iacona; D. Pacifici; A. Irrera; M. Miritello; G. Franzò; F. Priolo; D. Sanfilippo; G. Di Stefano; P. G. Fallica
Appl. Phys. Lett. 81, 3242–3244 (2002)
https://doi.org/10.1063/1.1516235
Focused-electron-beam-induced deposition of freestanding three-dimensional nanostructures of pure coalesced copper crystals
Appl. Phys. Lett. 81, 3245–3247 (2002)
https://doi.org/10.1063/1.1517180
Stress-induced growth of bismuth nanowires
Appl. Phys. Lett. 81, 3248–3250 (2002)
https://doi.org/10.1063/1.1515885
Filamentation and linewidth enhancement factor in InGaAs quantum dot lasers
Appl. Phys. Lett. 81, 3251–3253 (2002)
https://doi.org/10.1063/1.1516236
Self-organized strain engineering on GaAs Template formation for quantum dot nucleation control
Appl. Phys. Lett. 81, 3254–3256 (2002)
https://doi.org/10.1063/1.1516637
Impedance analysis of a radio-frequency single-electron transistor
Appl. Phys. Lett. 81, 3257–3259 (2002)
https://doi.org/10.1063/1.1515883
Carbon nanotube memory devices of high charge storage stability
Appl. Phys. Lett. 81, 3260–3262 (2002)
https://doi.org/10.1063/1.1516633
Nanopatterning of Si/SiGe electrical devices by atomic force microscopy oxidation
Appl. Phys. Lett. 81, 3263–3265 (2002)
https://doi.org/10.1063/1.1515113
DEVICE PHYSICS
Nondispersive hole transport in a spin-coated dendrimer film measured by the charge-generation-layer time-of-flight method
Jonathan P. J. Markham; Thomas D. Anthopoulos; Ifor D. W. Samuel; Gary J. Richards; Paul L. Burn; Chan Im; Heinz Bässler
Appl. Phys. Lett. 81, 3266–3268 (2002)
https://doi.org/10.1063/1.1514400
Simultaneous quantification of strain and defects in high-power diode laser devices
Appl. Phys. Lett. 81, 3269–3271 (2002)
https://doi.org/10.1063/1.1514390
Solar-blind AlGaN-based Schottky photodiodes with low noise and high detectivity
Appl. Phys. Lett. 81, 3272–3274 (2002)
https://doi.org/10.1063/1.1516856
Study of fusion bonding of diamond to silicon for silicon-on-diamond technology
Appl. Phys. Lett. 81, 3275–3277 (2002)
https://doi.org/10.1063/1.1516636
Direct evidence of multiple vibrational excitation for the bond breaking in metal–oxide–semiconductor transistors
Appl. Phys. Lett. 81, 3278–3280 (2002)
https://doi.org/10.1063/1.1516863
Synthesis of large-area germanium cone-arrays for application in electron field emission
Appl. Phys. Lett. 81, 3281–3283 (2002)
https://doi.org/10.1063/1.1515367
APPLIED BIOPHYSICS
Remote detection of human electroencephalograms using ultrahigh input impedance electric potential sensors
Appl. Phys. Lett. 81, 3284–3286 (2002)
https://doi.org/10.1063/1.1516861
INTERDISCIPLINARY AND GENERAL PHYSICS
Differential x-ray phase contrast imaging using a shearing interferometer
Appl. Phys. Lett. 81, 3287–3289 (2002)
https://doi.org/10.1063/1.1516611
COMMENTS
Comment on “Specific heat and thermodynamic properties of undercooled liquid cobalt” [Appl. Phys. Lett. 80, 28 (2002)]
Appl. Phys. Lett. 81, 3290–3291 (2002)
https://doi.org/10.1063/1.1515360
ERRATA
Attosecond physics and technology
O. Alexander, D. Ayuso, et al.
Significant improvement of breakdown voltage of Al0.86Ga0.14N Schottky barrier diodes by atomic layer etching
Tingang Liu, Zhiyuan Liu, et al.
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.