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LASERS, OPTICS, AND OPTOELECTRONICS

Complete three-dimensional band gap in macroporous silicon photonic crystals

S. W. Leonard

Appl. Phys. Lett. 81, 2917–2919 (2002) https://doi.org/10.1063/1.1513183

Abstract

View articletitled, Complete three-dimensional band gap in macroporous silicon photonic crystals

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Single-photon emission of CdSe quantum dots at temperatures up to 200 K

K. Sebald; P. Michler; T. Passow; D. Hommel; G. Bacher; A. Forchel

Appl. Phys. Lett. 81, 2920–2922 (2002) https://doi.org/10.1063/1.1515364

Abstract

View articletitled, Single-photon emission of CdSe quantum dots at temperatures up to 200 K

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Adaptive interferometer based on wave mixing in a photorefractive crystal under alternating electric field

Alexei A. Kamshilin; Alexander I. Grachev

Appl. Phys. Lett. 81, 2923–2925 (2002) https://doi.org/10.1063/1.1515131

Abstract

View articletitled, Adaptive interferometer based on wave mixing in a photorefractive crystal under alternating electric field

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Efficient diode-pumped passively Q-switched laser operation around 1.9 μm and self-frequency Raman conversion of Tm-doped $KY ({WO}_{4})_{2}$

L. E. Batay; A. N. Kuzmin; A. S. Grabtchikov; V. A. Lisinetskii; V. A. Orlovich; A. A. Demidovich; A. N. Titov; V. V. Badikov; S. G. Sheina; V. L. Panyutin; M. Mond; S. Kück

Appl. Phys. Lett. 81, 2926–2928 (2002) https://doi.org/10.1063/1.1514393

Abstract

View articletitled, Efficient diode-pumped passively Q-switched laser operation around 1.9 μm and self-frequency Raman conversion of Tm-doped <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">KY</mi><mi xmlns="">(</mi><msub xmlns=""><mi mathvariant="normal">WO</mi><mrow><mn>4</mn></mrow></msub><msub xmlns=""><mi>)</mi><mrow><mn>2</mn></mrow></msub></math>

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Organic light-emitting devices with extended operating lifetimes on plastic substrates

M. S. Weaver; L. A. Michalski; K. Rajan; M. A. Rothman; J. A. Silvernail; J. J. Brown; P. E. Burrows; G. L. Graff; M. E. Gross; P. M. Martin; M. Hall; E. Mast; C. Bonham; W. Bennett; M. Zumhoff

Appl. Phys. Lett. 81, 2929–2931 (2002) https://doi.org/10.1063/1.1514831

Abstract

View articletitled, Organic light-emitting devices with extended operating lifetimes on plastic substrates

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Wavelength- and duration-tunable soliton source based on a 20-GHz Mach–Zehnder modulator and adiabatic Raman compression

C. J. S. de Matos; D. A. Chestnut; J. R. Taylor

Appl. Phys. Lett. 81, 2932–2934 (2002) https://doi.org/10.1063/1.1514821

Abstract

View articletitled, Wavelength- and duration-tunable soliton source based on a 20-GHz Mach–Zehnder modulator and adiabatic Raman compression

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Improvement of efficiency and color purity utilizing two-step energy transfer for red organic light-emitting devices

Jing Feng; Feng Li; Wenbao Gao; Gang Cheng; Wenfa Xie; Shiyong Liu

Appl. Phys. Lett. 81, 2935–2937 (2002) https://doi.org/10.1063/1.1515884

Abstract

View articletitled, Improvement of efficiency and color purity utilizing two-step energy transfer for red organic light-emitting devices

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Low-temperature operation of AlGaN single-quantum-well light-emitting diodes with deep ultraviolet emission at 285 nm

A. Chitnis; R. Pachipulusu; V. Mandavilli; M. Shatalov; E. Kuokstis; J. P. Zhang; V. Adivarahan; S. Wu; G. Simin; M. Asif Khan

Appl. Phys. Lett. 81, 2938–2940 (2002) https://doi.org/10.1063/1.1516631

Abstract

View articletitled, Low-temperature operation of AlGaN single-quantum-well light-emitting diodes with deep ultraviolet emission at 285 nm

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GaAs quantum box cascade lasers

C. Becker; C. Sirtori; O. Drachenko; V. Rylkov; D. Smirnov; J. Leotin

Appl. Phys. Lett. 81, 2941–2943 (2002) https://doi.org/10.1063/1.1515135

Abstract

View articletitled, GaAs quantum box cascade lasers

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Linewidth enhancement factor in 1.3 μm GaAsSb type-II quantum-well lasers

C. Schlichenmaier; S. W. Koch; W. W. Chow

Appl. Phys. Lett. 81, 2944–2946 (2002) https://doi.org/10.1063/1.1514392

Abstract

View articletitled, Linewidth enhancement factor in 1.3 μm GaAsSb type-II quantum-well lasers

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Polyimide-waveguide-based thermal optical switch using total-internal-reflection effect

Jianyi Yang; Qingjun Zhou; Ray T. Chen

Appl. Phys. Lett. 81, 2947–2949 (2002) https://doi.org/10.1063/1.1511814

Abstract

View articletitled, Polyimide-waveguide-based thermal optical switch using total-internal-reflection effect

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Depth profiling InGaN/GaN multiple quantum wells by Rutherford backscattering: The role of intermixing

S. Pereira; E. Pereira; E. Alves; N. P. Barradas; K. P. O’Donnell; C. Liu; C. J. Deatcher; I. M. Watson

Appl. Phys. Lett. 81, 2950–2952 (2002) https://doi.org/10.1063/1.1513661

Abstract

View articletitled, Depth profiling InGaN/GaN multiple quantum wells by Rutherford backscattering: The role of intermixing

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Optical and structural properties of InAsP ternary self-assembled quantum dots embedded in GaAs

E. Ribeiro; R. L. Maltez; W. Carvalho, Jr.; D. Ugarte; G. Medeiros-Ribeiro

Appl. Phys. Lett. 81, 2953–2955 (2002) https://doi.org/10.1063/1.1513215

Abstract

View articletitled, Optical and structural properties of InAsP ternary self-assembled quantum dots embedded in GaAs

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High temperature stability of ${Al}_{2} O_{3}$ dielectrics on Si: Interfacial metal diffusion and mobility degradation

S. Guha; E. P. Gusev; H. Okorn-Schmidt; M. Copel; L.-Å Ragnarsson; N. A. Bojarczuk; P. Ronsheim

Appl. Phys. Lett. 81, 2956–2958 (2002) https://doi.org/10.1063/1.1513662

Abstract

View articletitled, High temperature stability of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>3</mn></mrow></msub></math> dielectrics on Si: Interfacial metal diffusion and mobility degradation

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Direct determination of free exciton binding energy from phonon-assisted luminescence spectra in GaN epilayers

S. J. Xu; W. Liu; M. F. Li

Appl. Phys. Lett. 81, 2959–2961 (2002) https://doi.org/10.1063/1.1514391

Abstract

View articletitled, Direct determination of free exciton binding energy from phonon-assisted luminescence spectra in GaN epilayers

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Cathodoluminescence of Cu diffusion in CdTe thin films for CdTe/CdS solar cells

Manuel J. Romero; David S. Albin; Mowafak M. Al-Jassim; Xuanzhi Wu; Helio R. Moutinho; Ramesh G. Dhere

Appl. Phys. Lett. 81, 2962–2964 (2002) https://doi.org/10.1063/1.1515119

Abstract

View articletitled, Cathodoluminescence of Cu diffusion in CdTe thin films for CdTe/CdS solar cells

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GaAs(311) templates for molecular beam epitaxy growth: surface morphologies and reconstruction

Z. M. Wang; V. R. Yazdanpanah; J. L. Shultz; G. J. Salamo

Appl. Phys. Lett. 81, 2965–2967 (2002) https://doi.org/10.1063/1.1514822

Abstract

View articletitled, GaAs(311) templates for molecular beam epitaxy growth: surface morphologies and reconstruction

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Structural disorder and loss of piezoelectric properties in α-quartz at high temperature

J. Haines; O. Cambon; D. A. Keen; M. G. Tucker; M. T. Dove

Appl. Phys. Lett. 81, 2968–2970 (2002) https://doi.org/10.1063/1.1515363

Abstract

View articletitled, Structural disorder and loss of piezoelectric properties in α-quartz at high temperature

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Temporal and thermal studies of charge transportation in self-assembly organic photovoltaic devices

F. Ghebremichael

Appl. Phys. Lett. 81, 2971–2973 (2002) https://doi.org/10.1063/1.1514398

Abstract

View articletitled, Temporal and thermal studies of charge transportation in self-assembly organic photovoltaic devices

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Influence of stacking faults on the performance of 4H–SiC Schottky barrier diodes fabricated on $(112̄0)$ face

K. Kojima; T. Ohno; T. Fujimoto; M. Katsuno; N. Ohtani; J. Nishio; T. Suzuki; T. Tanaka; Y. Ishida; T. Takahashi; K. Arai

Appl. Phys. Lett. 81, 2974–2976 (2002) https://doi.org/10.1063/1.1512956

Abstract

View articletitled, Influence of stacking faults on the performance of 4H–SiC Schottky barrier diodes fabricated on <math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">(112̄0)</mtext></math> face

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Relationship between the Li ionic conduction and the local structures in B-site substituted perovskite compounds, $({Li}_{0.1} {La}_{0.3})_{1+x} M_{x} {Nb}_{1−x} O_{3}$ $(M = Zr,$ Ti; $x=0,$ 0.05)

Masanobu Nakayama; Hiromasa Ikuta; Yoshiharu Uchimoto; Masataka Wakihara; Yasuko Terada

Appl. Phys. Lett. 81, 2977–2979 (2002) https://doi.org/10.1063/1.1515366

Abstract

View articletitled, Relationship between the Li ionic conduction and the local structures in B-site substituted perovskite compounds, <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">(</mi><msub xmlns=""><mi mathvariant="normal">Li</mi><mrow><mtext>0.1</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">La</mi><mrow><mtext>0.3</mtext></mrow></msub><msub xmlns=""><mi>)</mi><mrow><mtext>1+x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">M</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Nb</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>3</mn></mrow></msub></math> <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">(</mi><mi mathvariant="normal" xmlns="">M</mi><mi xmlns="">=</mi><mi mathvariant="normal" xmlns="">Zr</mi><mi xmlns="">,</mi></math> Ti; <math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">x=0,</mtext></math> 0.05)

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Dynamic etching of silicon for broadband antireflection applications

C. C. Striemer; P. M. Fauchet

Appl. Phys. Lett. 81, 2980–2982 (2002) https://doi.org/10.1063/1.1514832

Abstract

View articletitled, Dynamic etching of silicon for broadband antireflection applications

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Physical aging in a hyperquenched glass

Y. Z. Yue; S. L. Jensen; J. deC. Christiansen

Appl. Phys. Lett. 81, 2983–2985 (2002) https://doi.org/10.1063/1.1514386

Abstract

View articletitled, Physical aging in a hyperquenched glass

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Virtual surfaces, director domains, and the Fréedericksz transition in polymer-stabilized nematic liquid crystals

Pavel A. Kossyrev; Jun Qi; Nikolai V. Priezjev; Robert A. Pelcovits; Gregory P. Crawford

Appl. Phys. Lett. 81, 2986–2988 (2002) https://doi.org/10.1063/1.1515136

Abstract

View articletitled, Virtual surfaces, director domains, and the Fréedericksz transition in polymer-stabilized nematic liquid crystals

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Theoretical evidence for the kick-out mechanism for B diffusion in SiC

R. Rurali; P. Godignon; J. Rebollo; P. Ordejón; E. Hernández

Appl. Phys. Lett. 81, 2989–2991 (2002) https://doi.org/10.1063/1.1515369

Abstract

View articletitled, Theoretical evidence for the kick-out mechanism for B diffusion in SiC

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Ge–Sn semiconductors for band-gap and lattice engineering

M. Bauer; J. Taraci; J. Tolle; A. V. G. Chizmeshya; S. Zollner; David J. Smith; J. Menendez; Changwu Hu; J. Kouvetakis

Appl. Phys. Lett. 81, 2992–2994 (2002) https://doi.org/10.1063/1.1515133

Abstract

View articletitled, Ge–Sn semiconductors for band-gap and lattice engineering

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Integrity of hafnium silicate/silicon dioxide ultrathin films on Si

J. Morais; L. Miotti; G. V. Soares; S. R. Teixeira; R. Pezzi; K. P. Bastos; I. J. R. Baumvol; A. L. P. Rotondaro; J. J. Chambers; M. R. Visokay; L. Colombo

Appl. Phys. Lett. 81, 2995–2997 (2002) https://doi.org/10.1063/1.1515112

Abstract

View articletitled, Integrity of hafnium silicate/silicon dioxide ultrathin films on Si

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Sub-picosecond electron relaxation of near-infrared intersubband transitions in n-doped (CdS/ZnSe)/BeTe quantum wells

R. Akimoto; K. Akita; F. Sasaki; T. Hasama

Appl. Phys. Lett. 81, 2998–3000 (2002) https://doi.org/10.1063/1.1515371

Abstract

View articletitled, Sub-picosecond electron relaxation of near-infrared intersubband transitions in n-doped (CdS/ZnSe)/BeTe quantum wells

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Transient optical studies of charge recombination dynamics in a polymer/fullerene composite at room temperature

Ivan Montanari; Ana F. Nogueira; Jenny Nelson; James R. Durrant; Christoph Winder; Maria Antonietta Loi; Niyazi Serdar Sariciftci; Christoph Brabec

Appl. Phys. Lett. 81, 3001–3003 (2002) https://doi.org/10.1063/1.1512943

Abstract

View articletitled, Transient optical studies of charge recombination dynamics in a polymer/fullerene composite at room temperature

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Carrier profiling of Al-doped 4H-SiC by scanning spreading resistance microscopy

J. Osterman; A. Hallén; S. Anand

Appl. Phys. Lett. 81, 3004–3006 (2002) https://doi.org/10.1063/1.1514829

Abstract

View articletitled, Carrier profiling of Al-doped 4H-SiC by scanning spreading resistance microscopy

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Self-assembled GaAs antiwires in ${In}_{0.53} {Ga}_{0.47} As$ matrix on (100) InP substrates

S. D. Lin; C. P. Lee; W. H. Hsieh; Y. W. Suen

Appl. Phys. Lett. 81, 3007–3009 (2002) https://doi.org/10.1063/1.1515878

Abstract

View articletitled, Self-assembled GaAs antiwires in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">In</mi><mrow><mtext>0.53</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>0.47</mtext></mrow></msub><mi mathvariant="normal" xmlns="">As</mi></math> matrix on (100) InP substrates

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MAGNETISM AND SUPERCONDUCTIVITY

Hall effect and hole densities in ${Ga}_{1−x} {Mn}_{x} As$

K. W. Edmonds; K. Y. Wang; R. P. Campion; A. C. Neumann; C. T. Foxon; B. L. Gallagher; P. C. Main

Appl. Phys. Lett. 81, 3010–3012 (2002) https://doi.org/10.1063/1.1512822

Abstract

View articletitled, Hall effect and hole densities in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Mn</mi><mrow><mi>x</mi></mrow></msub><mi mathvariant="normal" xmlns="">As</mi></math>

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Ferromagnetism and interlayer exchange coupling in short-period (Ga,Mn)As/GaAs superlattices

R. Mathieu; P. Svedlindh; J. Sadowski; K. Światek; M. Karlsteen; J. Kanski; L. Ilver

Appl. Phys. Lett. 81, 3013–3015 (2002) https://doi.org/10.1063/1.1515368

Abstract

View articletitled, Ferromagnetism and interlayer exchange coupling in short-period (Ga,Mn)As/GaAs superlattices

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Angular rotation of magnetic hysteresis of ion-irradiated ferromagnetic thin films

G. S. Chang; T. A. Callcott; G. P. Zhang; G. T. Woods; S. H. Kim; S. W. Shin; K. Jeong; C. N. Whang; A. Moewes

Appl. Phys. Lett. 81, 3016–3018 (2002) https://doi.org/10.1063/1.1515370

Abstract

View articletitled, Angular rotation of magnetic hysteresis of ion-irradiated ferromagnetic thin films

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DIELECTRICS AND FERROELECTRICITY

Decreasing giant splitting of longitudinal and transverse optical phonons in ${Pb}_{x} {Sr}_{1−x} {TiO}_{3}$ due to Pb covalency

Shou-Yi Kuo; Chung-Ting Li; Wen-Feng Hsieh

Appl. Phys. Lett. 81, 3019–3021 (2002) https://doi.org/10.1063/1.1513660

Abstract

View articletitled, Decreasing giant splitting of longitudinal and transverse optical phonons in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Pb</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Sr</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">TiO</mi><mrow><mn>3</mn></mrow></msub></math> due to Pb covalency

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Second-harmonic study of polar symmetry and domain structure in ${SrTi}^{18} O_{3}$

Lei Zhang; Wolfgang Kleemann; Ruiping Wang; Mitsuru Itoh

Appl. Phys. Lett. 81, 3022–3024 (2002) https://doi.org/10.1063/1.1515130

Abstract

View articletitled, Second-harmonic study of polar symmetry and domain structure in <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">SrTi</mi><mrow><mn>18</mn></mrow></msup><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>3</mn></mrow></msub></math>

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Piezoelectric nonlinearity of $Pb (Zr,Ti) O_{3}$ thin films probed by scanning force microscopy

V. V. Shvartsman; A. L. Kholkin; N. A. Pertsev

Appl. Phys. Lett. 81, 3025–3027 (2002) https://doi.org/10.1063/1.1514389

Abstract

View articletitled, Piezoelectric nonlinearity of <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">Pb</mi><mi xmlns="">(</mi><mi mathvariant="normal" xmlns="">Zr,Ti</mi><mi xmlns="">)</mi><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>3</mn></mrow></msub></math> thin films probed by scanning force microscopy

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Dielectric properties of random and 〈100〉 oriented ${SrTiO}_{3}$ and ${(Ba,Sr)TiO}_{3}$ thin films fabricated on 〈100〉 nickel tapes

J. T. Dawley; P. G. Clem

Appl. Phys. Lett. 81, 3028–3030 (2002) https://doi.org/10.1063/1.1516630

Abstract

View articletitled, Dielectric properties of random and 〈100〉 oriented <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SrTiO</mi><mrow><mn>3</mn></mrow></msub></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">(Ba,Sr)TiO</mi><mrow><mn>3</mn></mrow></msub></math> thin films fabricated on 〈100〉 nickel tapes

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NANOSCALE SCIENCE AND DESIGN

Anomalous localization effects associated with excess volume of cobalt catalyst in multiwalled carbon nanotubes

Junji Haruyama; Izumi Takesue; Tetsuro Hasegawa

Appl. Phys. Lett. 81, 3031–3033 (2002) https://doi.org/10.1063/1.1511535

Abstract

View articletitled, Anomalous localization effects associated with excess volume of cobalt catalyst in multiwalled carbon nanotubes

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Second-harmonic spectroscopy of two-dimensional Si nanocrystal layers embedded in ${SiO}_{2}$ films

Y. Jiang; L. Sun; M. C. Downer

Appl. Phys. Lett. 81, 3034–3036 (2002) https://doi.org/10.1063/1.1510963

Abstract

View articletitled, Second-harmonic spectroscopy of two-dimensional Si nanocrystal layers embedded in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mn>2</mn></mrow></msub></math> films

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High-resolution atomic force microscope nanotip grown by self-field emission

C. H. Oon; J. T. L. Thong; Y. Lei; W. K. Chim

Appl. Phys. Lett. 81, 3037–3039 (2002) https://doi.org/10.1063/1.1515120

Abstract

View articletitled, High-resolution atomic force microscope nanotip grown by self-field emission

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Space-selective precipitation of metal nanoparticles inside glasses

Jianrong Qiu; Mitsuru Shirai; Takayuki Nakaya; Jinhai Si; Xiongwei Jiang; Congshan Zhu; Kazuyuki Hirao

Appl. Phys. Lett. 81, 3040–3042 (2002) https://doi.org/10.1063/1.1509095

Abstract

View articletitled, Space-selective precipitation of metal nanoparticles inside glasses

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Electrical measurements of a dithiolated electronic molecule via conducting atomic force microscopy

Adam M. Rawlett; Theresa J. Hopson; Larry A. Nagahara; Raymond K. Tsui; Ganesh K. Ramachandran; Stuart M. Lindsay

Appl. Phys. Lett. 81, 3043–3045 (2002) https://doi.org/10.1063/1.1512815

Abstract

View articletitled, Electrical measurements of a dithiolated electronic molecule via conducting atomic force microscopy

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Site-specific growth of Zno nanorods using catalysis-driven molecular-beam epitaxy

Y. W. Heo; V. Varadarajan; M. Kaufman; K. Kim; D. P. Norton; F. Ren; P. H. Fleming

Appl. Phys. Lett. 81, 3046–3048 (2002) https://doi.org/10.1063/1.1512829

Abstract

View articletitled, Site-specific growth of Zno nanorods using catalysis-driven molecular-beam epitaxy

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Size and location control of Si nanocrystals at ion beam synthesis in thin ${SiO}_{2}$ films

Torsten Müller; Karl-Heinz Heinig; Wolfhard Möller

Appl. Phys. Lett. 81, 3049–3051 (2002) https://doi.org/10.1063/1.1512952

Abstract

View articletitled, Size and location control of Si nanocrystals at ion beam synthesis in thin <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mn>2</mn></mrow></msub></math> films

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Engineering the nanocrystalline structure of ${TiO}_{2}$ films by aerodynamically filtered cluster deposition

E. Barborini; I. N. Kholmanov; P. Piseri; C. Ducati; C. E. Bottani; P. Milani

Appl. Phys. Lett. 81, 3052–3054 (2002) https://doi.org/10.1063/1.1510579

Abstract

View articletitled, Engineering the nanocrystalline structure of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">TiO</mi><mrow><mn>2</mn></mrow></msub></math> films by aerodynamically filtered cluster deposition

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Dynamic characteristics of high-speed ${In}_{0.4} {Ga}_{0.6} As/GaAs$ self-organized quantum dot lasers at room temperature

S. Ghosh; S. Pradhan; P. Bhattacharya

Appl. Phys. Lett. 81, 3055–3057 (2002) https://doi.org/10.1063/1.1514823

Abstract

View articletitled, Dynamic characteristics of high-speed <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">In</mi><mrow><mtext>0.4</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>0.6</mtext></mrow></msub><mi mathvariant="normal" xmlns="">As/GaAs</mi></math> self-organized quantum dot lasers at room temperature

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Gradient nanostructures for interfacing microfluidics and nanofluidics

Han Cao; Jonas O. Tegenfeldt; Robert H. Austin; Stephen Y. Chou

Appl. Phys. Lett. 81, 3058–3060 (2002) https://doi.org/10.1063/1.1515115

Abstract

View articletitled, Gradient nanostructures for interfacing microfluidics and nanofluidics

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Phase diagram for the interaction of oxygen with SiC

Y. Song; F. W. Smith

Appl. Phys. Lett. 81, 3061–3063 (2002) https://doi.org/10.1063/1.1514397

Abstract

View articletitled, Phase diagram for the interaction of oxygen with SiC

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GaN islanding by spontaneous rearrangement of a strained two-dimensional layer on (0001) AlN

C. Adelmann; N. Gogneau; E. Sarigiannidou; J.-L. Rouvière; B. Daudin

Appl. Phys. Lett. 81, 3064–3066 (2002) https://doi.org/10.1063/1.1515114

Abstract

View articletitled, GaN islanding by spontaneous rearrangement of a strained two-dimensional layer on (0001) AlN

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Temperature dependence of the photoluminescence of InGaAs/GaAs quantum dot structures without wetting layer

S. Sanguinetti; T. Mano; M. Oshima; T. Tateno; M. Wakaki; N. Koguchi

Appl. Phys. Lett. 81, 3067–3069 (2002) https://doi.org/10.1063/1.1516632

Abstract

View articletitled, Temperature dependence of the photoluminescence of InGaAs/GaAs quantum dot structures without wetting layer

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Stressed metal probes for atomic force microscopy

Thomas Hantschel; Eugene M. Chow; Dirk Rudolph; David K. Fork

Appl. Phys. Lett. 81, 3070–3072 (2002) https://doi.org/10.1063/1.1514830

Abstract

View articletitled, Stressed metal probes for atomic force microscopy

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DEVICE PHYSICS

Comparative study of drain-current collapse in AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC

S. Arulkumaran; T. Egawa; H. Ishikawa; T. Jimbo

Appl. Phys. Lett. 81, 3073–3075 (2002) https://doi.org/10.1063/1.1512820

Abstract

View articletitled, Comparative study of drain-current collapse in AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC

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Electron emission from GaN $n–p$ junctions

Jonathan L. Shaw; Randolph E. Treece; Dinesh Patel; Carmen S. Menoni; Jim R. Smith; J. I. Pankove

Appl. Phys. Lett. 81, 3076–3078 (2002) https://doi.org/10.1063/1.1514824

Abstract

View articletitled, Electron emission from GaN <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">n–p</mi></math> junctions

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Vapor sensing with α,ω-dihexylquarterthiophene field-effect transistors: The role of grain boundaries

Takao Someya; Howard E. Katz; Alan Gelperin; Andrew J. Lovinger; Ananth Dodabalapur

Appl. Phys. Lett. 81, 3079–3081 (2002) https://doi.org/10.1063/1.1514826

Abstract

View articletitled, Vapor sensing with α,ω-dihexylquarterthiophene field-effect transistors: The role of grain boundaries

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Impact of the channel thickness on the performance of Schottky barrier metal–oxide–semiconductor field-effect transistors

J. Knoch; J. Appenzeller

Appl. Phys. Lett. 81, 3082–3084 (2002) https://doi.org/10.1063/1.1513657

Abstract

View articletitled, Impact of the channel thickness on the performance of Schottky barrier metal–oxide–semiconductor field-effect transistors

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Polymer—perylene diimide heterojunction solar cells

A. J. Breeze; A. Salomon; D. S. Ginley; B. A. Gregg; H. Tillmann; H.-H. Hörhold

Appl. Phys. Lett. 81, 3085–3087 (2002) https://doi.org/10.1063/1.1515362

Abstract

View articletitled, Polymer—perylene diimide heterojunction solar cells

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Near-infrared electroluminescence in polymer composites based on organic nanocrystals

Eugene I. Maltsev; Dmitry A. Lypenko; Vladimir V. Bobinkin; Alek R. Tameev; Sergey V. Kirillov; Boris I. Shapiro; Herman F. M. Schoo; Anatoly V. Vannikov

Appl. Phys. Lett. 81, 3088–3090 (2002) https://doi.org/10.1063/1.1515880

Abstract

View articletitled, Near-infrared electroluminescence in polymer composites based on organic nanocrystals

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APPLIED BIOPHYSICS

Micromechanical cantilever as an ultrasensitive pH microsensor

R. Bashir; J. Z. Hilt; O. Elibol; A. Gupta; N. A. Peppas

Appl. Phys. Lett. 81, 3091–3093 (2002) https://doi.org/10.1063/1.1514825

Abstract

View articletitled, Micromechanical cantilever as an ultrasensitive pH microsensor

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Magnetic gradiometer based on a high-transition temperature superconducting quantum interference device for improved sensitivity of a biosensor

SeungKyun Lee; W. R. Myers; H. L. Grossman; H.-M. Cho; Y. R. Chemla; John Clarke

Appl. Phys. Lett. 81, 3094–3096 (2002) https://doi.org/10.1063/1.1515122

Abstract

View articletitled, Magnetic gradiometer based on a high-transition temperature superconducting quantum interference device for improved sensitivity of a biosensor

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INTERDISCIPLINARY AND GENERAL PHYSICS

Microcontact printing of catalytic nanoparticles for selective electroless deposition of metals on nonplanar polymeric substrates

W. K. Ng; L. Wu; P. M. Moran

Appl. Phys. Lett. 81, 3097–3099 (2002) https://doi.org/10.1063/1.1513184

Abstract

View articletitled, Microcontact printing of catalytic nanoparticles for selective electroless deposition of metals on nonplanar polymeric substrates

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COMMENTS

Comment on “Effect of growth interruptions on the light emission and indium clustering of InGaN/GaN multiple quantum wells” [Appl. Phys. Lett. 79, 2594 (2001)]

R. W. Martin; K. P. O’Donnell; P. R. Edwards

Appl. Phys. Lett. 81, 3100–3101 (2002) https://doi.org/10.1063/1.1515886

Abstract

View articletitled, Comment on “Effect of growth interruptions on the light emission and indium clustering of InGaN/GaN multiple quantum wells” [Appl. Phys. Lett. 79, 2594 (2001)]

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Response to “Comment on ‘Effect of growth interruptions on the light emission and indium clustering of InGaN/GaN multiple quantum wells’ ” [Appl. Phys. Lett. 81, 3100 (2002)]

H. K. Cho; J. Y. Lee; N. Sharma; C. J. Humphreys; G. M. Yang; C. S. Kim; J. H. Song; P. W. Yu

Appl. Phys. Lett. 81, 3102–3103 (2002) https://doi.org/10.1063/1.1515887

View articletitled, Response to “Comment on ‘Effect of growth interruptions on the light emission and indium clustering of InGaN/GaN multiple quantum wells’ ” [Appl. Phys. Lett. 81, 3100 (2002)]

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Issues

LASERS, OPTICS, AND OPTOELECTRONICS

STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

ELECTRONIC TRANSPORT AND SEMICONDUCTORS

MAGNETISM AND SUPERCONDUCTIVITY

DIELECTRICS AND FERROELECTRICITY

NANOSCALE SCIENCE AND DESIGN

DEVICE PHYSICS

APPLIED BIOPHYSICS

INTERDISCIPLINARY AND GENERAL PHYSICS

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