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LASERS, OPTICS, AND OPTOELECTRONICS

Highly efficient continuous-wave 946-nm Nd:YAG laser emission under direct 885-nm pumping

V. Lupei; N. Pavel; T. Taira

Appl. Phys. Lett. 81, 2677–2679 (2002) https://doi.org/10.1063/1.1511811

Abstract

View articletitled, Highly efficient continuous-wave 946-nm Nd:YAG laser emission under direct 885-nm pumping

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Low-threshold photonic crystal laser

Marko Lončar; Tomoyuki Yoshie; Axel Scherer; Pawan Gogna; Yueming Qiu

Appl. Phys. Lett. 81, 2680–2682 (2002) https://doi.org/10.1063/1.1511538

Abstract

View articletitled, Low-threshold photonic crystal laser

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Quantum-cascade-laser structures as photodetectors

Daniel Hofstetter; Mattias Beck; Jérôme Faist

Appl. Phys. Lett. 81, 2683–2685 (2002) https://doi.org/10.1063/1.1512954

Abstract

View articletitled, Quantum-cascade-laser structures as photodetectors

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Nonvolatile two-color holography in Mn-doped near-stoichiometric lithium niobate

Youwen Liu; Kenji Kitamura; Shunji Takekawa; Ganesan Ravi; Masaru Nakamura; Hideki Hatano; Takashi Yamaji

Appl. Phys. Lett. 81, 2686–2688 (2002) https://doi.org/10.1063/1.1512951

Abstract

View articletitled, Nonvolatile two-color holography in Mn-doped near-stoichiometric lithium niobate

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Self-assembly of three-dimensional photonic crystals on structured silicon wafers

P. Ferrand; M. Egen; B. Griesebock; J. Ahopelto; M. Müller; R. Zentel; S. G. Romanov; C. M. Sotomayor Torres

Appl. Phys. Lett. 81, 2689–2691 (2002) https://doi.org/10.1063/1.1513212

Abstract

View articletitled, Self-assembly of three-dimensional photonic crystals on structured silicon wafers

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Density clamping and longitudinal spatial hole burning in a gain-clamped semiconductor optical amplifier

M.-S. Nomura; F. Salleras; M. A. Dupertuis; L. Kappei; D. Marti; B. Deveaud; J.-Y. Emery; A. Crottini; B. Dagens; T. Shimura; K. Kuroda

Appl. Phys. Lett. 81, 2692–2694 (2002) https://doi.org/10.1063/1.1512308

Abstract

View articletitled, Density clamping and longitudinal spatial hole burning in a gain-clamped semiconductor optical amplifier

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Cascaded Raman self-frequency shifted soliton generation in an Er/Yb-doped fiber amplifier

Do-Hyun Kim; Jin U. Kang; Jacob B. Khurgin

Appl. Phys. Lett. 81, 2695–2697 (2002) https://doi.org/10.1063/1.1512823

Abstract

View articletitled, Cascaded Raman self-frequency shifted soliton generation in an Er/Yb-doped fiber amplifier

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Tunable single-photon source using Korteweg–de Vries solitons

Ken-ichi Matsuda; Noriyuki Hatakenaka; Hideaki Takayanagi; Tetsuro Sakuma

Appl. Phys. Lett. 81, 2698–2700 (2002) https://doi.org/10.1063/1.1512942

Abstract

View articletitled, Tunable single-photon source using Korteweg–de Vries solitons

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Enhanced third-order nonlinear optical properties of $C_{60}$ –silane compounds

B. L. Yu; H. P. Xia; C. S. Zhu; F. X. Gan

Appl. Phys. Lett. 81, 2701–2703 (2002) https://doi.org/10.1063/1.1512959

Abstract

View articletitled, Enhanced third-order nonlinear optical properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">C</mi><mrow><mn>60</mn></mrow></msub></math>–silane compounds

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Microstructure of squarylium dye $J$ aggregate films examined on the basis of optical behavior at low temperature

Satoshi Tatsuura; Minquan Tian; Makoto Furuki; Yasuhiro Sato; Izumi Iwasa; Lyong Sun Pu; Hitoshi Kawashima; Hiroshi Ishikawa

Appl. Phys. Lett. 81, 2704–2706 (2002) https://doi.org/10.1063/1.1512960

Abstract

View articletitled, Microstructure of squarylium dye <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">J</mi></math> aggregate films examined on the basis of optical behavior at low temperature

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Zirconia and zirconia-organically modified silicate distributed feedback waveguide lasers tunable in the visible

Dennis Lo; Lei Shi; Jun Wang; Guo-Xuan Zhang; Xiao-lei Zhu

Appl. Phys. Lett. 81, 2707–2709 (2002) https://doi.org/10.1063/1.1512949

Abstract

View articletitled, Zirconia and zirconia-organically modified silicate distributed feedback waveguide lasers tunable in the visible

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Second-harmonic generation tuning curves with narrow, high-intensity beams for quasiphase-matched potassium titanyl phosphate

Hongki Kim; Ladislav Jankovic; George Stegeman; Mordechai Katz; Silvia Carrasco; Lluis Torner

Appl. Phys. Lett. 81, 2710–2712 (2002) https://doi.org/10.1063/1.1512941

Abstract

View articletitled, Second-harmonic generation tuning curves with narrow, high-intensity beams for quasiphase-matched potassium titanyl phosphate

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Negative refraction of modulated electromagnetic waves

D. R. Smith; D. Schurig; J. B. Pendry

Appl. Phys. Lett. 81, 2713–2715 (2002) https://doi.org/10.1063/1.1512828

Abstract

View articletitled, Negative refraction of modulated electromagnetic waves

Supplementary Material

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PLASMAS AND ELECTRICAL DISCHARGES

Atmospheric-pressure diffuse coplanar surface discharge for surface treatments

Marcel Šimor; Jozef Ráhel’; Pavel Vojtek; Mirko Černák; Antonı́n Brablec

Appl. Phys. Lett. 81, 2716–2718 (2002) https://doi.org/10.1063/1.1513185

Abstract

View articletitled, Atmospheric-pressure diffuse coplanar surface discharge for surface treatments

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Effect of annealing on the In and N distribution in InGaAsN quantum wells

M. Albrecht; V. Grillo; T. Remmele; H. P. Strunk; A. Yu. Egorov; Gh. Dumitras; H. Riechert; A. Kaschner; R. Heitz; A. Hoffmann

Appl. Phys. Lett. 81, 2719–2721 (2002) https://doi.org/10.1063/1.1509122

Abstract

View articletitled, Effect of annealing on the In and N distribution in InGaAsN quantum wells

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The origin of stress reduction by low-temperature AlN interlayers

J. Bläsing; A. Reiher; A. Dadgar; A. Diez; A. Krost

Appl. Phys. Lett. 81, 2722–2724 (2002) https://doi.org/10.1063/1.1512331

Abstract

View articletitled, The origin of stress reduction by low-temperature AlN interlayers

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Giant microcavity enhancement of second-harmonic generation in all-silicon photonic crystals

T. V. Dolgova; A. I. Maidykovski; M. G. Martemyanov; A. A. Fedyanin; O. A. Aktsipetrov; G. Marowsky; V. A. Yakovlev; G. Mattei

Appl. Phys. Lett. 81, 2725–2727 (2002) https://doi.org/10.1063/1.1510968

Abstract

View articletitled, Giant microcavity enhancement of second-harmonic generation in all-silicon photonic crystals

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Z-contrast imaging of dislocation cores at the GaAs/Si interface

S. Lopatin; S. J. Pennycook; J. Narayan; G. Duscher

Appl. Phys. Lett. 81, 2728–2730 (2002) https://doi.org/10.1063/1.1511808

Abstract

View articletitled, Z-contrast imaging of dislocation cores at the GaAs/Si interface

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Optical diffraction gratings produced by laser interference structuring of amorphous germanium–nitrogen alloys

M. Mulato; A. R. Zanatta; D. Toet; I. E. Chambouleyron

Appl. Phys. Lett. 81, 2731–2733 (2002) https://doi.org/10.1063/1.1512307

Abstract

View articletitled, Optical diffraction gratings produced by laser interference structuring of amorphous germanium–nitrogen alloys

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Effects of carbon codoping on lattice locations of erbium in silicon

M. B. Huang; X. T. Ren

Appl. Phys. Lett. 81, 2734–2736 (2002) https://doi.org/10.1063/1.1510960

Abstract

View articletitled, Effects of carbon codoping on lattice locations of erbium in silicon

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Interferometric correlation spectroscopy in single quantum dots

C. Kammerer; G. Cassabois; C. Voisin; M. Perrin; C. Delalande; Ph. Roussignol; J. M. Gérard

Appl. Phys. Lett. 81, 2737–2739 (2002) https://doi.org/10.1063/1.1510158

Abstract

View articletitled, Interferometric correlation spectroscopy in single quantum dots

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Thickness determination of very thin ${SiO}_{2}$ films on Si by electron-induced x-ray emission spectroscopy

C. Hombourger; P. Jonnard; E. O. Filatova; V. Lukyanov

Appl. Phys. Lett. 81, 2740–2742 (2002) https://doi.org/10.1063/1.1511281

Abstract

View articletitled, Thickness determination of very thin <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mn>2</mn></mrow></msub></math> films on Si by electron-induced x-ray emission spectroscopy

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On the origin of the blueshift from type-II quantum dots emission using microphotoluminescence

M. K. K. Nakaema; F. Iikawa; M. J. S. P. Brasil; E. Ribeiro; G. Medeiros-Ribeiro; W. Carvalho, Jr.; M. Z. Maialle; M. H. Degani

Appl. Phys. Lett. 81, 2743–2745 (2002) https://doi.org/10.1063/1.1511812

Abstract

View articletitled, On the origin of the blueshift from type-II quantum dots emission using microphotoluminescence

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Surface roughening of tensilely strained ${Si}_{1−x−y} {Ge}_{x} C_{y}$ films grown by ultrahigh vacuum chemical vapor deposition

Cyril Calmes; D. Bouchier; D. Débarre; C. Clerc

Appl. Phys. Lett. 81, 2746–2748 (2002) https://doi.org/10.1063/1.1505114

Abstract

View articletitled, Surface roughening of tensilely strained <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Si</mi><mrow><mtext>1−x−y</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ge</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">C</mi><mrow><mi>y</mi></mrow></msub></math> films grown by ultrahigh vacuum chemical vapor deposition

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${Sr}_{3} {Al}_{10} {SiO}_{20} : {Eu}^{2+}$ as a blue luminescent material for plasma displays

Shunichi Kubota; Masahiko Shimada

Appl. Phys. Lett. 81, 2749–2751 (2002) https://doi.org/10.1063/1.1512306

Abstract

View articletitled, <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Sr</mi><mrow><mn>3</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mn>10</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mn>20</mn></mrow></msub><mi xmlns="">:</mi><msup xmlns=""><mi mathvariant="normal">Eu</mi><mrow><mtext>2+</mtext></mrow></msup></math> as a blue luminescent material for plasma displays

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Thermodynamic equilibrium and metal-organic interface dipole

Li Yan; N. J. Watkins; S. Zorba; Yongli Gao; C. W. Tang

Appl. Phys. Lett. 81, 2752–2754 (2002) https://doi.org/10.1063/1.1512826

Abstract

View articletitled, Thermodynamic equilibrium and metal-organic interface dipole

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Near-band-edge photoluminescence of wurtzite-type AlN

E. Kuokstis; J. Zhang; Q. Fareed; J. W. Yang; G. Simin; M. Asif Khan; R. Gaska; M. Shur; C. Rojo; L. Schowalter

Appl. Phys. Lett. 81, 2755–2757 (2002) https://doi.org/10.1063/1.1510586

Abstract

View articletitled, Near-band-edge photoluminescence of wurtzite-type AlN

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Minimizing threading dislocations by redirection during cantilever epitaxial growth of GaN

D. M. Follstaedt; P. P. Provencio; N. A. Missert; C. C. Mitchell; D. D. Koleske; A. A. Allerman; C. I. H. Ashby

Appl. Phys. Lett. 81, 2758–2760 (2002) https://doi.org/10.1063/1.1511286

Abstract

View articletitled, Minimizing threading dislocations by redirection during cantilever epitaxial growth of GaN

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Violet-blue photoluminescent properties of mesoporous zirconia modified with phosphoric acid

Hang-Rong Chen; Jian-Lin Shi; Yong Yang; Yong-Sheng Li; Dong-Sheng Yan; Chao-Shu Shi

Appl. Phys. Lett. 81, 2761–2763 (2002) https://doi.org/10.1063/1.1512825

Abstract

View articletitled, Violet-blue photoluminescent properties of mesoporous zirconia modified with phosphoric acid

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Structural, dielectric, and magnetic properties of epitaxially grown ${BaFeO}_{3}$ thin films on (100) ${SrTiO}_{3}$ single-crystal substrates

T. Matsui; H. Tanaka; N. Fujimura; T. Ito; H. Mabuchi; K. Morii

Appl. Phys. Lett. 81, 2764–2766 (2002) https://doi.org/10.1063/1.1513213

Abstract

View articletitled, Structural, dielectric, and magnetic properties of epitaxially grown <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">BaFeO</mi><mrow><mn>3</mn></mrow></msub></math> thin films on (100) <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SrTiO</mi><mrow><mn>3</mn></mrow></msub></math> single-crystal substrates

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Impurity incorporation in InGaN grown by rf plasma-assisted molecular beam epitaxy

C. Poblenz; T. Mates; M. Craven; S. P. DenBaars; J. S. Speck

Appl. Phys. Lett. 81, 2767–2769 (2002) https://doi.org/10.1063/1.1512817

Abstract

View articletitled, Impurity incorporation in InGaN grown by rf plasma-assisted molecular beam epitaxy

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Si(100) surface morphology evolution during normal-incidence sputtering with 100–500 eV ${Ar}^{+}$ ions

F. Ludwig, Jr.; C. R. Eddy, Jr.; O. Malis; R. L. Headrick

Appl. Phys. Lett. 81, 2770–2772 (2002) https://doi.org/10.1063/1.1513655

Abstract

View articletitled, Si(100) surface morphology evolution during normal-incidence sputtering with 100–500 eV <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">Ar</mi><mrow><mi>+</mi></mrow></msup></math> ions

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Effect of Si doping on the relaxation mechanism of InGaAs on GaAs

P. J. Parbrook; B. K. Tanner; B. Lunn; J. H. C. Hogg; A. M. Keir; A. D. Johnson

Appl. Phys. Lett. 81, 2773–2775 (2002) https://doi.org/10.1063/1.1513181

Abstract

View articletitled, Effect of Si doping on the relaxation mechanism of InGaAs on GaAs

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Structural study of a commensurate phase at Co/Si(111) interface using in situ surface x-ray scattering

T. S. Kang; J. H. Je; H. J. Kim; D. Y. Noh; N. D. Kim; J. W. Chung

Appl. Phys. Lett. 81, 2776–2778 (2002) https://doi.org/10.1063/1.1513658

Abstract

View articletitled, Structural study of a commensurate phase at Co/Si(111) interface using in situ surface x-ray scattering

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Control of the confining potential in ballistic constrictions using a persistent charging effect

S. F. Fischer; G. Apetrii; S. Skaberna; U. Kunze; D. Reuter; A. D. Wieck

Appl. Phys. Lett. 81, 2779–2781 (2002) https://doi.org/10.1063/1.1511278

Abstract

View articletitled, Control of the confining potential in ballistic constrictions using a persistent charging effect

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Band bending mechanism for field emission in wide-band gap semiconductors

R. Z. Wang; B. Wang; H. Wang; H. Zhou; A. P. Huang; M. K. Zhu; H. Yan; X. H. Yan

Appl. Phys. Lett. 81, 2782–2784 (2002) https://doi.org/10.1063/1.1511809

Abstract

View articletitled, Band bending mechanism for field emission in wide-band gap semiconductors

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Thermal and doping dependence of 4H-SiC polytype transformation

L. J. Brillson; S. Tumakha; G. H. Jessen; R. S. Okojie; M. Zhang; P. Pirouz

Appl. Phys. Lett. 81, 2785–2787 (2002) https://doi.org/10.1063/1.1512816

Abstract

View articletitled, Thermal and doping dependence of 4H-SiC polytype transformation

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Relaxation of photoinjected spins during drift transport in GaAs

H. Sanada; I. Arata; Y. Ohno; Z. Chen; K. Kayanuma; Y. Oka; F. Matsukura; H. Ohno

Appl. Phys. Lett. 81, 2788–2790 (2002) https://doi.org/10.1063/1.1512818

Abstract

View articletitled, Relaxation of photoinjected spins during drift transport in GaAs

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Coherent generation of 100 GHz acoustic phonons by dynamic screening of piezoelectric fields in AlGaN/GaN multilayers

E. Makarona; B. Daly; J.-S. Im; H. Maris; A. Nurmikko; Jung Han

Appl. Phys. Lett. 81, 2791–2793 (2002) https://doi.org/10.1063/1.1512821

Abstract

View articletitled, Coherent generation of 100 GHz acoustic phonons by dynamic screening of piezoelectric fields in AlGaN/GaN multilayers

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Energy relaxation during hot-exciton transport in quantum wells: Direct observation by spatially resolved phonon-sideband spectroscopy

Hui Zhao; Sebastian Moehl; Heinz Kalt

Appl. Phys. Lett. 81, 2794–2796 (2002) https://doi.org/10.1063/1.1512819

Abstract

View articletitled, Energy relaxation during hot-exciton transport in quantum wells: Direct observation by spatially resolved phonon-sideband spectroscopy

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Analysis of piezoresistance in n-type β-SiC for high-temperature mechanical sensors

Toshiyuki Toriyama; Susumu Sugiyama

Appl. Phys. Lett. 81, 2797–2799 (2002) https://doi.org/10.1063/1.1513652

Abstract

View articletitled, Analysis of piezoresistance in n-type β-SiC for high-temperature mechanical sensors

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Local electronic structures of GaMnAs observed by cross-sectional scanning tunneling microscopy

T. Tsuruoka; N. Tachikawa; S. Ushioda; F. Matsukura; K. Takamura; H. Ohno

Appl. Phys. Lett. 81, 2800–2802 (2002) https://doi.org/10.1063/1.1512953

Abstract

View articletitled, Local electronic structures of GaMnAs observed by cross-sectional scanning tunneling microscopy

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MAGNETISM AND SUPERCONDUCTIVITY

Flux pinning and critical currents at low-angle grain boundaries in high-temperature superconductors

D. Agassi; D. K. Christen; S. J. Pennycook

Appl. Phys. Lett. 81, 2803–2805 (2002) https://doi.org/10.1063/1.1502907

Abstract

View articletitled, Flux pinning and critical currents at low-angle grain boundaries in high-temperature superconductors

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Magnetization reversal in GaMnAs layers studied by Kerr effect

D. Hrabovsky; E. Vanelle; A. R. Fert; D. S. Yee; J. P. Redoules; J. Sadowski; J. Kanski; L. Ilver

Appl. Phys. Lett. 81, 2806–2808 (2002) https://doi.org/10.1063/1.1506204

Abstract

View articletitled, Magnetization reversal in GaMnAs layers studied by Kerr effect

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Giant magnetoresistance in 60–150-nm-wide pseudo-spin-valve nanowires

F. J. Castaño; S. Haratani; Y. Hao; C. A. Ross; Henry I. Smith

Appl. Phys. Lett. 81, 2809–2811 (2002) https://doi.org/10.1063/1.1512327

Abstract

View articletitled, Giant magnetoresistance in 60–150-nm-wide pseudo-spin-valve nanowires

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Atomic disorder in Heusler ${Co}_{2} MnGe$ measured by anomalous x-ray diffraction

B. Ravel; J. O. Cross; M. P. Raphael; V. G. Harris; R. Ramesh; L. V. Saraf

Appl. Phys. Lett. 81, 2812–2814 (2002) https://doi.org/10.1063/1.1513216

Abstract

View articletitled, Atomic disorder in Heusler <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Co</mi><mrow><mn>2</mn></mrow></msub><mi mathvariant="normal" xmlns="">MnGe</mi></math> measured by anomalous x-ray diffraction

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Signal decay and amplitude measurements of antiferromagnetically coupled magnetic recording media

Andreas Moser; David T. Margulies; Charles T. Rettner; Eric E. Fullerton

Appl. Phys. Lett. 81, 2815–2817 (2002) https://doi.org/10.1063/1.1512958

Abstract

View articletitled, Signal decay and amplitude measurements of antiferromagnetically coupled magnetic recording media

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Superhigh strains by variant reorientation in the nonmodulated ferromagnetic NiMnGa alloys

Chengbao Jiang; Ting Liang; Huibin Xu; Ming Zhang; Guangheng Wu

Appl. Phys. Lett. 81, 2818–2820 (2002) https://doi.org/10.1063/1.1512948

Abstract

View articletitled, Superhigh strains by variant reorientation in the nonmodulated ferromagnetic NiMnGa alloys

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DIELECTRICS AND FERROELECTRICITY

Energy band structure of ${Ru/(Ba,Sr)TiO}_{3} / Si$ capacitor deposited by inductively-coupled plasma-assisted radio-frequency-magnetron plasma sputtering

Takamaro Kikkawa; Naonori Fujiwara; Hiroshi Yamada; Seiichi Miyazaki; Fumitaka Nishiyama; Masataka Hirose

Appl. Phys. Lett. 81, 2821–2823 (2002) https://doi.org/10.1063/1.1509467

Abstract

View articletitled, Energy band structure of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ru/(Ba,Sr)TiO</mi><mrow><mn>3</mn></mrow></msub><mi xmlns="">/</mi><mi mathvariant="normal" xmlns="">Si</mi></math> capacitor deposited by inductively-coupled plasma-assisted radio-frequency-magnetron plasma sputtering

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Atomic-layer deposition of ${ZrO}_{2}$ with a Si nitride barrier layer

Anri Nakajima; Toshirou Kidera; Hiroyuki Ishii; Shin Yokoyama

Appl. Phys. Lett. 81, 2824–2826 (2002) https://doi.org/10.1063/1.1510584

Abstract

View articletitled, Atomic-layer deposition of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">ZrO</mi><mrow><mn>2</mn></mrow></msub></math> with a Si nitride barrier layer

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In situ characterization of the grain and grain-boundary electrical responses of zirconia ceramics under uniaxial compressive stresses

Jean-Claude M’Peko; Deusdedit L. Spavieri, Jr.; Milton Ferreira de Souza

Appl. Phys. Lett. 81, 2827–2829 (2002) https://doi.org/10.1063/1.1512328

Abstract

View articletitled, In situ characterization of the grain and grain-boundary electrical responses of zirconia ceramics under uniaxial compressive stresses

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Conductivity-induced polarization buildup in poly(vinylidene fluoride)

H. von Seggern; S. N. Fedosov

Appl. Phys. Lett. 81, 2830–2832 (2002) https://doi.org/10.1063/1.1512944

Abstract

View articletitled, Conductivity-induced polarization buildup in poly(vinylidene fluoride)

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NANOSCALE SCIENCE AND DESIGN

Mechanical properties and interfacial characteristics of carbon-nanotube-reinforced epoxy thin films

Xiaojing Xu; Moe Moe Thwe; Christopher Shearwood; Kin Liao

Appl. Phys. Lett. 81, 2833–2835 (2002) https://doi.org/10.1063/1.1511532

Abstract

View articletitled, Mechanical properties and interfacial characteristics of carbon-nanotube-reinforced epoxy thin films

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Watching carbon nanotubes grow

Jean-Marc Bonard; Mirko Croci; Fabien Conus; Thomas Stöckli; André Chatelain

Appl. Phys. Lett. 81, 2836–2838 (2002) https://doi.org/10.1063/1.1511539

Abstract

View articletitled, Watching carbon nanotubes grow

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High internal quantum efficiency, narrow linewidth InGaAs/GaAs/AlGaAs quantum wire light-emitting diodes

H. Weman; L. Sirigu; K. F. Karlsson; K. Leifer; A. Rudra; E. Kapon

Appl. Phys. Lett. 81, 2839–2841 (2002) https://doi.org/10.1063/1.1511279

Abstract

View articletitled, High internal quantum efficiency, narrow linewidth InGaAs/GaAs/AlGaAs quantum wire light-emitting diodes

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Atomic force microscope anodic oxidation studied by spectroscopic microscopy

M. Lazzarino; S. Heun; B. Ressel; K. C. Prince; P. Pingue; C. Ascoli

Appl. Phys. Lett. 81, 2842–2844 (2002) https://doi.org/10.1063/1.1509121

Abstract

View articletitled, Atomic force microscope anodic oxidation studied by spectroscopic microscopy

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Frequency modulation response of a liquid-crystal electro-optic device doped with nanoparticles

Yukihide Shiraishi; Naoki Toshima; Kenji Maeda; Hiroaki Yoshikawa; Jun Xu; Shunsuke Kobayashi

Appl. Phys. Lett. 81, 2845–2847 (2002) https://doi.org/10.1063/1.1511282

Abstract

View articletitled, Frequency modulation response of a liquid-crystal electro-optic device doped with nanoparticles

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Midinfrared luminescence from InAs quantum dots in unipolar devices

D. Wasserman; S. A. Lyon

Appl. Phys. Lett. 81, 2848–2850 (2002) https://doi.org/10.1063/1.1511537

Abstract

View articletitled, Midinfrared luminescence from InAs quantum dots in unipolar devices

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Anisotropic pinning enhancement in Nb films with arrays of submicrometric Ni lines

D. Jaque; E. M. González; J. I. Martin; J. V. Anguita; J. L. Vicent

Appl. Phys. Lett. 81, 2851–2853 (2002) https://doi.org/10.1063/1.1512947

Abstract

View articletitled, Anisotropic pinning enhancement in Nb films with arrays of submicrometric Ni lines

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Fabrication of single-hole transistors on hydrogenated diamond surface using atomic force microscope

Minoru Tachiki; Hokuto Seo; Tokishige Banno; Yu Sumikawa; Hitoshi Umezawa; Hiroshi Kawarada

Appl. Phys. Lett. 81, 2854–2856 (2002) https://doi.org/10.1063/1.1513656

Abstract

View articletitled, Fabrication of single-hole transistors on hydrogenated diamond surface using atomic force microscope

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Local structure and luminescence of nanocrystalline $Y_{2} O_{3} : Eu$

Zeming Qi; Chaoshu Shi; Weiwei Zhang; Weiping Zhang; Tiandou Hu

Appl. Phys. Lett. 81, 2857–2859 (2002) https://doi.org/10.1063/1.1513659

Abstract

View articletitled, Local structure and luminescence of nanocrystalline <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Y</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>3</mn></mrow></msub><mi xmlns="">:</mi><mi mathvariant="normal" xmlns="">Eu</mi></math>

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Operation of individual integrally gated carbon nanotube field emitter cells

M. A. Guillorn; M. D. Hale; V. I. Merkulov; M. L. Simpson; G. Y. Eres; H. Cui; A. A. Puretzky; D. B. Geohegan

Appl. Phys. Lett. 81, 2860–2862 (2002) https://doi.org/10.1063/1.1512955

Abstract

View articletitled, Operation of individual integrally gated carbon nanotube field emitter cells

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Real-time determination of the segregation strength of indium atoms in InGaAs layers grown by molecular-beam epitaxy

S. Martini; A. A. Quivy; E. C. F. da Silva; J. R. Leite

Appl. Phys. Lett. 81, 2863–2865 (2002) https://doi.org/10.1063/1.1513182

Abstract

View articletitled, Real-time determination of the segregation strength of indium atoms in InGaAs layers grown by molecular-beam epitaxy

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Imaging, structural, and chemical analysis of silicon nanowires

R. J. Barsotti, Jr.; J. E. Fischer; C. H. Lee; J. Mahmood; C. K. W. Adu; P. C. Eklund

Appl. Phys. Lett. 81, 2866–2868 (2002) https://doi.org/10.1063/1.1512827

Abstract

View articletitled, Imaging, structural, and chemical analysis of silicon nanowires

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Nickel antidot arrays on anodic alumina substrates

Z. L. Xiao; Catherine Y. Han; U. Welp; H. H. Wang; V. K. Vlasko-Vlasov; W. K. Kwok; D. J. Miller; J. M. Hiller; R. E. Cook; G. A. Willing; G. W. Crabtree

Appl. Phys. Lett. 81, 2869–2871 (2002) https://doi.org/10.1063/1.1512993

Abstract

View articletitled, Nickel antidot arrays on anodic alumina substrates

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Scanning Lorentz force microscopy

Atsushi Okuda; Jun Ichihara; Yutaka Majima

Appl. Phys. Lett. 81, 2872–2874 (2002) https://doi.org/10.1063/1.1512945

Abstract

View articletitled, Scanning Lorentz force microscopy

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Recording performance of high-density patterned perpendicular magnetic media

M. Albrecht; C. T. Rettner; A. Moser; M. E. Best; B. D. Terris

Appl. Phys. Lett. 81, 2875–2877 (2002) https://doi.org/10.1063/1.1512946

Abstract

View articletitled, Recording performance of high-density patterned perpendicular magnetic media

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DEVICE PHYSICS

Bifunctional photovoltaic and electroluminescent devices using a starburst amine as an electron donor and hole-transporting material

Z. R. Hong; C. S. Lee; S. T. Lee; W. L. Li; Y. Shirota

Appl. Phys. Lett. 81, 2878–2880 (2002) https://doi.org/10.1063/1.1509092

Abstract

View articletitled, Bifunctional photovoltaic and electroluminescent devices using a starburst amine as an electron donor and hole-transporting material

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Extraction of spatio-temporal distribution of power dissipation in semiconductor devices using nanosecond interferometric mapping technique

D. Pogany; S. Bychikhin; M. Litzenberger; E. Gornik; G. Groos; M. Stecher

Appl. Phys. Lett. 81, 2881–2883 (2002) https://doi.org/10.1063/1.1510962

Abstract

View articletitled, Extraction of spatio-temporal distribution of power dissipation in semiconductor devices using nanosecond interferometric mapping technique

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High-efficiency blue-light-emitting diodes with narrow linewidth based on blends of poly[2-(2^′-ethylhexyloxy)-1,4-phenylene] and poly(dialkylfluorene-co-dibenzothiophene)

Yu-Hua Niu; Wei Yang; Yong Cao

Appl. Phys. Lett. 81, 2884–2886 (2002) https://doi.org/10.1063/1.1510581

Abstract

View articletitled, High-efficiency blue-light-emitting diodes with narrow linewidth based on blends of poly[2-(2′-ethylhexyloxy)-1,4-phenylene] and poly(dialkylfluorene-co-dibenzothiophene)

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Contact effects in polymer transistors

R. A. Street; A. Salleo

Appl. Phys. Lett. 81, 2887–2889 (2002) https://doi.org/10.1063/1.1512950

Abstract

View articletitled, Contact effects in polymer transistors

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APPLIED BIOPHYSICS

Morphological and biochemical analysis by atomic force microscopy and scanning near-field optical microscopy techniques of human keratinocytes (HaCaT) exposed to extremely low frequency 50 Hz magnetic field

Sabrina Rieti; Vanessa Manni; Antonella Lisi; Settimio Grimaldi; Renato Generosi; Marco Luce; Paolo Perfetti; Antonio Cricenti; Deleana Pozzi; Livio Giuliani

Appl. Phys. Lett. 81, 2890–2892 (2002) https://doi.org/10.1063/1.1506011

Abstract

View articletitled, Morphological and biochemical analysis by atomic force microscopy and scanning near-field optical microscopy techniques of human keratinocytes (HaCaT) exposed to extremely low frequency 50 Hz magnetic field

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INTERDISCIPLINARY AND GENERAL PHYSICS

Ion transport and crystallization in inorganic building materials as studied by nuclear magnetic resonance

Leo Pel; Henk Huinink; Klaas Kopinga

Appl. Phys. Lett. 81, 2893–2895 (2002) https://doi.org/10.1063/1.1512329

Abstract

View articletitled, Ion transport and crystallization in inorganic building materials as studied by nuclear magnetic resonance

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Microwire arrays with plasmonic response at microwave frequencies

Philippe Gay-Balmaz; Claudio Maccio; Olivier J. F. Martin

Appl. Phys. Lett. 81, 2896–2898 (2002) https://doi.org/10.1063/1.1513663

Abstract

View articletitled, Microwire arrays with plasmonic response at microwave frequencies

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Activation of oxide-ion conduction in ${KNbO}_{3}$ by addition of ${Mg}^{2+}$

Liping Li; Guangshe Li; R. L. Smith, Jr.; H. Inomata

Appl. Phys. Lett. 81, 2899–2901 (2002) https://doi.org/10.1063/1.1512957

Abstract

View articletitled, Activation of oxide-ion conduction in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">KNbO</mi><mrow><mn>3</mn></mrow></msub></math> by addition of <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">Mg</mi><mrow><mtext>2+</mtext></mrow></msup></math>

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ERRATA

Erratum: “Electrical and optical characterization of conducting poly-3-methylthiophene film by THz time-domain spectroscopy” [Appl. Phys. Lett. 79, 4142 (2001)]

Tae-In Jeon; D. Grischkowsky; A. K. Mukherjee; Reghu Menon

Appl. Phys. Lett. 81, 2902 (2002) https://doi.org/10.1063/1.1511819

View articletitled, Erratum: “Electrical and optical characterization of conducting poly-3-methylthiophene film by THz time-domain spectroscopy” [Appl. Phys. Lett. 79, 4142 (2001)]

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Issues

LASERS, OPTICS, AND OPTOELECTRONICS

PLASMAS AND ELECTRICAL DISCHARGES

STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

ELECTRONIC TRANSPORT AND SEMICONDUCTORS

MAGNETISM AND SUPERCONDUCTIVITY

DIELECTRICS AND FERROELECTRICITY

NANOSCALE SCIENCE AND DESIGN

DEVICE PHYSICS

APPLIED BIOPHYSICS

INTERDISCIPLINARY AND GENERAL PHYSICS

ERRATA

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