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LASERS, OPTICS, AND OPTOELECTRONICS

Colloidal photonic crystal microchannel array with periodically modulated thickness

H. Mı́guez; S. M. Yang; G. A. Ozin

Appl. Phys. Lett. 81, 2493–2495 (2002) https://doi.org/10.1063/1.1510959

Abstract

View articletitled, Colloidal photonic crystal microchannel array with periodically modulated thickness

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All-optical cw laser polarization conversion at 1.55 μm by two-beam coupling in nematic liquid crystal films

I. C. Khoo; J. Ding

Appl. Phys. Lett. 81, 2496–2498 (2002) https://doi.org/10.1063/1.1510965

Abstract

View articletitled, All-optical cw laser polarization conversion at 1.55 μm by two-beam coupling in nematic liquid crystal films

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Two-dimensional photonic crystal hexagonal waveguide ring laser

Se-Heon Kim; Han-Youl Ryu; Hong-Gyu Park; Guk-Hyun Kim; Yong-Seok Choi; Yong-Hee Lee; Jeong-Soo Kim

Appl. Phys. Lett. 81, 2499–2501 (2002) https://doi.org/10.1063/1.1510583

Abstract

View articletitled, Two-dimensional photonic crystal hexagonal waveguide ring laser

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Wavelength tunable ultrashort pulse generation from a passively mode-locked asymmetric-quantum-well semiconductor laser

M. J. Brennan; J. N. Milgram; P. Mascher; H. K. Haugen

Appl. Phys. Lett. 81, 2502–2504 (2002) https://doi.org/10.1063/1.1510587

Abstract

View articletitled, Wavelength tunable ultrashort pulse generation from a passively mode-locked asymmetric-quantum-well semiconductor laser

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InGaAsP/InP avalanche photodiodes for photon counting at 1.06 μm

K. A. McIntosh; J. P. Donnelly; D. C. Oakley; A. Napoleone; S. D. Calawa; L. J. Mahoney; K. M. Molvar; E. K. Duerr; S. H. Groves; D. C. Shaver

Appl. Phys. Lett. 81, 2505–2507 (2002) https://doi.org/10.1063/1.1509469

Abstract

View articletitled, InGaAsP/InP avalanche photodiodes for photon counting at 1.06 μm

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1 mW AlInGaN-based ultraviolet light-emitting diode with an emission wavelength of 348 nm grown on sapphire substrate

T. Wang; Y. H. Liu; Y. B. Lee; J. P. Ao; J. Bai; S. Sakai

Appl. Phys. Lett. 81, 2508–2510 (2002) https://doi.org/10.1063/1.1510967

Abstract

View articletitled, 1 mW AlInGaN-based ultraviolet light-emitting diode with an emission wavelength of 348 nm grown on sapphire substrate

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Random lasing following two-photon excitation of highly scattering gain media

Giannis Zacharakis; Nektarios A. Papadogiannis; Theodore G. Papazoglou

Appl. Phys. Lett. 81, 2511–2513 (2002) https://doi.org/10.1063/1.1511284

Abstract

View articletitled, Random lasing following two-photon excitation of highly scattering gain media

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Demonstration and optical characteristics of electro-optic Bragg modulators in periodically poled lithium niobate in the near-infrared

J. A. Abernethy; C. B. E. Gawith; R. W. Eason; P. G. R. Smith

Appl. Phys. Lett. 81, 2514–2516 (2002) https://doi.org/10.1063/1.1510964

Abstract

View articletitled, Demonstration and optical characteristics of electro-optic Bragg modulators in periodically poled lithium niobate in the near-infrared

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Improved transmission characteristics of moderate refractive index contrast photonic crystal slabs

G. Böttger; C. Liguda; M. Schmidt; M. Eich

Appl. Phys. Lett. 81, 2517–2519 (2002) https://doi.org/10.1063/1.1511816

Abstract

View articletitled, Improved transmission characteristics of moderate refractive index contrast photonic crystal slabs

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Submicron extreme ultraviolet imaging using high-harmonic radiation

Marek Wieland; Rolf Frueke; Thomas Wilhein; Christian Spielmann; Martin Pohl; Ulf Kleineberg

Appl. Phys. Lett. 81, 2520–2522 (2002) https://doi.org/10.1063/1.1511288

Abstract

View articletitled, Submicron extreme ultraviolet imaging using high-harmonic radiation

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Low-threshold-current-density 1300-nm dilute-nitride quantum well lasers

Nelson Tansu; Nicholas J. Kirsch; Luke J. Mawst

Appl. Phys. Lett. 81, 2523–2525 (2002) https://doi.org/10.1063/1.1511290

Abstract

View articletitled, Low-threshold-current-density 1300-nm dilute-nitride quantum well lasers

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PLASMAS AND ELECTRICAL DISCHARGES

Self-sustained photoelectron discharge

P. A. Bokhan; D. E. Zakrevsky

Appl. Phys. Lett. 81, 2526–2528 (2002) https://doi.org/10.1063/1.1511289

Abstract

View articletitled, Self-sustained photoelectron discharge

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Power dissipation mode transition by a magnetic field

S. J. You; C. W. Chung; K. H. Bai; H. Y. Chang

Appl. Phys. Lett. 81, 2529–2531 (2002) https://doi.org/10.1063/1.1506944

Abstract

View articletitled, Power dissipation mode transition by a magnetic field

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Enhanced second-order nonlinear optical response of ${LiNbO}_{3}$ films upon Er doping

J. Gonzalo; J. A. Chaos; A. Suárez-Garcı́a; C. N. Afonso; V. Pruneri

Appl. Phys. Lett. 81, 2532–2534 (2002) https://doi.org/10.1063/1.1506949

Abstract

View articletitled, Enhanced second-order nonlinear optical response of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">LiNbO</mi><mrow><mn>3</mn></mrow></msub></math> films upon Er doping

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Dynamical x-ray microscopy investigation of electromigration in passivated inlaid Cu interconnect structures

G. Schneider; G. Denbeaux; E. H. Anderson; B. Bates; A. Pearson; M. A. Meyer; E. Zschech; D. Hambach; E. A. Stach

Appl. Phys. Lett. 81, 2535–2537 (2002) https://doi.org/10.1063/1.1509465

Abstract

View articletitled, Dynamical x-ray microscopy investigation of electromigration in passivated inlaid Cu interconnect structures

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Superhigh-frequency surface-acoustic-wave transducers using AlN layers grown on SiC substrates

Y. Takagaki; P. V. Santos; E. Wiebicke; O. Brandt; H.-P. Schönherr; K. H. Ploog

Appl. Phys. Lett. 81, 2538–2540 (2002) https://doi.org/10.1063/1.1509471

Abstract

View articletitled, Superhigh-frequency surface-acoustic-wave transducers using AlN layers grown on SiC substrates

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Method to measure shear moduli of nonequilibrium phases pseudomorphically stabilized in superlattices

V. Pankov; M. Evstigneev; R. H. Prince

Appl. Phys. Lett. 81, 2541–2543 (2002) https://doi.org/10.1063/1.1510966

Abstract

View articletitled, Method to measure shear moduli of nonequilibrium phases pseudomorphically stabilized in superlattices

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Micro-Raman studies of vertical-cavity surface-emitting lasers with ${Al}_{x} O_{y} / GaAs$ distributed Bragg reflectors

V. A. Haisler; F. Hopfer; R. L. Sellin; A. Lochmann; K. Fleischer; N. Esser; W. Richter; N. N. Ledentsov; D. Bimberg; C. Möller; N. Grote

Appl. Phys. Lett. 81, 2544–2546 (2002) https://doi.org/10.1063/1.1511533

Abstract

View articletitled, Micro-Raman studies of vertical-cavity surface-emitting lasers with <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi>y</mi></mrow></msub><mi xmlns="">/</mi><mi mathvariant="normal" xmlns="">GaAs</mi></math> distributed Bragg reflectors

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Photoluminescence upconversion in 4H–SiC

Mt. Wagner; I. G. Ivanov; L. Storasta; J. P. Bergman; B. Magnusson; W. M. Chen; E. Janzén

Appl. Phys. Lett. 81, 2547–2549 (2002) https://doi.org/10.1063/1.1511813

Abstract

View articletitled, Photoluminescence upconversion in 4H–SiC

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Multiple splitting of G-band modes from individual multiwalled carbon nanotubes

Xinluo Zhao; Yoshinori Ando; Lu-Chang Qin; Hiromichi Kataura; Yutaka Maniwa; Riichiro Saito

Appl. Phys. Lett. 81, 2550–2552 (2002) https://doi.org/10.1063/1.1502196

Abstract

View articletitled, Multiple splitting of G-band modes from individual multiwalled carbon nanotubes

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Permanent grayscales in bistable twisted nematic liquid-crystal displays

Z. L. Xie; Z. G. Meng; M. Wong; H. S. Kwok

Appl. Phys. Lett. 81, 2553–2555 (2002) https://doi.org/10.1063/1.1511807

Abstract

View articletitled, Permanent grayscales in bistable twisted nematic liquid-crystal displays

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Three-dimensional band mapping of graphite

Fumihiko Matsui; Yoshiaki Hori; Hiroaki Miyata; Nobutaka Suganuma; Hiroshi Daimon; Hidekazu Totsuka; Koji Ogawa; Tomoya Furukubo; Hidetoshi Namba

Appl. Phys. Lett. 81, 2556–2558 (2002) https://doi.org/10.1063/1.1511818

Abstract

View articletitled, Three-dimensional band mapping of graphite

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Sensitive detection of voids in solid materials by refraction-enhanced synchrotron radiation imaging

Keiko Imamura; Norishige Ehara; Keiji Umetani; Keiko Miyamoto; Yoshihide Kanemaki; Kentarou Uesugi; Yoichi Inada; Haruki Ogata; Yasuo Nakajima; Mamoru Fukuda

Appl. Phys. Lett. 81, 2559–2560 (2002) https://doi.org/10.1063/1.1510585

Abstract

View articletitled, Sensitive detection of voids in solid materials by refraction-enhanced synchrotron radiation imaging

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Evaluation of the thermal stability of a ${Cu}_{60} {Hf}_{25} {Ti}_{15}$ metallic glass

Dmitri V. Louzguine; Akihisa Inoue

Appl. Phys. Lett. 81, 2561–2562 (2002) https://doi.org/10.1063/1.1509466

Abstract

View articletitled, Evaluation of the thermal stability of a <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Cu</mi><mrow><mn>60</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Hf</mi><mrow><mn>25</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ti</mi><mrow><mn>15</mn></mrow></msub></math> metallic glass

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Application of low-temperature area-selective regrowth for ultrashallow sidewall GaAs tunnel junctions

Yutaka Oyama; Takeo Ohno; Kenji Tezuka; Ken Suto; Jun-ichi Nishizawa

Appl. Phys. Lett. 81, 2563–2565 (2002) https://doi.org/10.1063/1.1510162

Abstract

View articletitled, Application of low-temperature area-selective regrowth for ultrashallow sidewall GaAs tunnel junctions

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Theory of laser gain in InGaN quantum dots

W. W. Chow; H. C. Schneider

Appl. Phys. Lett. 81, 2566–2568 (2002) https://doi.org/10.1063/1.1509476

Abstract

View articletitled, Theory of laser gain in InGaN quantum dots

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Direct measurement of electrical potentials in ${GaInP}_{2}$ solar cells

Chun-Sheng Jiang; H. R. Moutinho; J. F. Geisz; D. J. Friedman; M. M. Al-Jassim

Appl. Phys. Lett. 81, 2569–2571 (2002) https://doi.org/10.1063/1.1509114

Abstract

View articletitled, Direct measurement of electrical potentials in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">GaInP</mi><mrow><mn>2</mn></mrow></msub></math> solar cells

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Nanoscale charge transport in an electroluminescent polymer investigated by conducting atomic force microscopy

Heh-Nan Lin; Hui-Lien Lin; Shen-Shen Wang; Liang-Sheng Yu; Gung-Yeong Perng; Show-An Chen; Sy-Hann Chen

Appl. Phys. Lett. 81, 2572–2574 (2002) https://doi.org/10.1063/1.1509464

Abstract

View articletitled, Nanoscale charge transport in an electroluminescent polymer investigated by conducting atomic force microscopy

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Charge trapping in light-emitting ${SiO}_{2}$ layers implanted with ${Ge}^{+}$ ions

T. Gebel; L. Rebohle; W. Skorupa; A. N. Nazarov; I. N. Osiyuk; V. S. Lysenko

Appl. Phys. Lett. 81, 2575–2577 (2002) https://doi.org/10.1063/1.1510970

Abstract

View articletitled, Charge trapping in light-emitting <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mn>2</mn></mrow></msub></math> layers implanted with <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">Ge</mi><mrow><mi>+</mi></mrow></msup></math> ions

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Analysis of low-frequency noise in boron-doped polycrystalline silicon–germanium resistors

Kun-Ming Chen; Guo-Wei Huang; D. Y. Chiu; Hsiang-Jen Huang; Chun-Yen Chang

Appl. Phys. Lett. 81, 2578–2580 (2002) https://doi.org/10.1063/1.1511815

Abstract

View articletitled, Analysis of low-frequency noise in boron-doped polycrystalline silicon–germanium resistors

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Enhancing the electroluminescent properties of organic light-emitting devices using a thin NaCl layer

S. J. Kang; D. S. Park; S. Y. Kim; C. N. Whang; K. Jeong; S. Im

Appl. Phys. Lett. 81, 2581–2583 (2002) https://doi.org/10.1063/1.1511817

Abstract

View articletitled, Enhancing the electroluminescent properties of organic light-emitting devices using a thin NaCl layer

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MAGNETISM AND SUPERCONDUCTIVITY

Growth and spin-resolved photoemission spectroscopy of the epitaxial $α- {Al}_{2} O_{3} / Fe (110)$ system

Yu. S. Dedkov; M. Fonin; U. Rüdiger; G. Güntherodt

Appl. Phys. Lett. 81, 2584–2586 (2002) https://doi.org/10.1063/1.1507836

Abstract

View articletitled, Growth and spin-resolved photoemission spectroscopy of the epitaxial <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">α-</mi><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>3</mn></mrow></msub><mi xmlns="">/</mi><mi mathvariant="normal" xmlns="">Fe</mi><mtext xmlns="">(110)</mtext></math> system

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Electrical properties, texture, and microstructure of vicinal ${YBa}_{2} {Cu}_{3} O_{7−δ}$ thin films

J. D. Pedarnig; R. Rössler; M. P. Delamare; W. Lang; D. Bäuerle; A. Köhler; H. W. Zandbergen

Appl. Phys. Lett. 81, 2587–2589 (2002) https://doi.org/10.1063/1.1508418

Abstract

View articletitled, Electrical properties, texture, and microstructure of vicinal <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">YBa</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Cu</mi><mrow><mn>3</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mtext>7−δ</mtext></mrow></msub></math> thin films

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Magnetic properties of (Al,Ga,Mn)As

K. Takamura; F. Matsukura; D. Chiba; H. Ohno

Appl. Phys. Lett. 81, 2590–2592 (2002) https://doi.org/10.1063/1.1511540

Abstract

View articletitled, Magnetic properties of (Al,Ga,Mn)As

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DIELECTRICS AND FERROELECTRICITY

Bonding states and electrical properties of ultrathin ${HfO}_{x} N_{y}$ gate dielectrics

Chang Seok Kang; Hag-Ju Cho; Katsunori Onishi; Renee Nieh; Rino Choi; Sundar Gopalan; Sid Krishnan; Jeong H. Han; Jack C. Lee

Appl. Phys. Lett. 81, 2593–2595 (2002) https://doi.org/10.1063/1.1510155

Abstract

View articletitled, Bonding states and electrical properties of ultrathin <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">HfO</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">N</mi><mrow><mi>y</mi></mrow></msub></math> gate dielectrics

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Stability of defects in lead–zirconate–titanate after unipolar fatigue

Cyril Verdier; Doru C. Lupascu; Jürgen Rödel

Appl. Phys. Lett. 81, 2596–2598 (2002) https://doi.org/10.1063/1.1510161

Abstract

View articletitled, Stability of defects in lead–zirconate–titanate after unipolar fatigue

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Ultrathin ferroelectric strontium bismuth tantalate films

A. González; R. Jiménez; J. Mendiola; C. Alemany; M. L. Calzada

Appl. Phys. Lett. 81, 2599–2601 (2002) https://doi.org/10.1063/1.1506953

Abstract

View articletitled, Ultrathin ferroelectric strontium bismuth tantalate films

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Analysis of grain-boundary effects on the electrical properties of ${Pb(Zr,Ti)O}_{3}$ thin films

Jang-Sik Lee; Seung-Ki Joo

Appl. Phys. Lett. 81, 2602–2604 (2002) https://doi.org/10.1063/1.1511280

Abstract

View articletitled, Analysis of grain-boundary effects on the electrical properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Pb(Zr,Ti)O</mi><mrow><mn>3</mn></mrow></msub></math> thin films

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Coercive and switching fields in ferroelectric ceramics

G. Arlt; J. H. Calderwood

Appl. Phys. Lett. 81, 2605–2607 (2002) https://doi.org/10.1063/1.1511541

Abstract

View articletitled, Coercive and switching fields in ferroelectric ceramics

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Impact of moisture on charge trapping and flatband voltage in ${Al}_{2} O_{3}$ gate dielectric films

Sufi Zafar; A. Callegari; Vijay Narayanan; Supratik Guha

Appl. Phys. Lett. 81, 2608–2610 (2002) https://doi.org/10.1063/1.1506788

Abstract

View articletitled, Impact of moisture on charge trapping and flatband voltage in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>3</mn></mrow></msub></math> gate dielectric films

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Large ferroelectric response in ${Bi}_{4−x} {Nd}_{x} {Ti}_{3} O_{12}$ films prepared by sol–gel process

R. E. Melgarejo; M. S. Tomar; S. Bhaskar; P. S. Dobal; R. S. Katiyar

Appl. Phys. Lett. 81, 2611–2613 (2002) https://doi.org/10.1063/1.1511542

Abstract

View articletitled, Large ferroelectric response in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Bi</mi><mrow><mtext>4−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Nd</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ti</mi><mrow><mn>3</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>12</mn></mrow></msub></math> films prepared by sol–gel process

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NANOSCALE SCIENCE AND DESIGN

Composition of self-assembled Ge/Si islands in single and multiple layers

O. G. Schmidt; U. Denker; S. Christiansen; F. Ernst

Appl. Phys. Lett. 81, 2614–2616 (2002) https://doi.org/10.1063/1.1507612

Abstract

View articletitled, Composition of self-assembled Ge/Si islands in single and multiple layers

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How nanocavities in amorphous Si shrink under ion beam irradiation: An in situ study

M.-O. Ruault; F. Fortuna; H. Bernas; M. C. Ridgway; J. S. Williams

Appl. Phys. Lett. 81, 2617–2619 (2002) https://doi.org/10.1063/1.1509854

Abstract

View articletitled, How nanocavities in amorphous Si shrink under ion beam irradiation: An in situ study

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Scanning force microscopy jumping and tapping modes in liquids

F. Moreno-Herrero; P. J. de Pablo; R. Fernández-Sánchez; J. Colchero; J. Gómez-Herrero; A. M. Baró

Appl. Phys. Lett. 81, 2620–2622 (2002) https://doi.org/10.1063/1.1509856

Abstract

View articletitled, Scanning force microscopy jumping and tapping modes in liquids

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Adhesive forces investigation on a silicon tip by contact-mode atomic force microscope

Vincent Agache; Bernard Legrand; Dominique Collard; Lionel Buchaillot

Appl. Phys. Lett. 81, 2623–2625 (2002) https://doi.org/10.1063/1.1508806

Abstract

View articletitled, Adhesive forces investigation on a silicon tip by contact-mode atomic force microscope

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Gas-phase nanoparticle formation during AlGaN metalorganic vapor phase epitaxy

J. R. Creighton; W. G. Breiland; M. E. Coltrin; R. P. Pawlowski

Appl. Phys. Lett. 81, 2626–2628 (2002) https://doi.org/10.1063/1.1510580

Abstract

View articletitled, Gas-phase nanoparticle formation during AlGaN metalorganic vapor phase epitaxy

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Dopant profiling on semiconducting sample by scanning capacitance force microscopy

Kei Kobayashi; Hirofumi Yamada; Kazumi Matsushige

Appl. Phys. Lett. 81, 2629–2631 (2002) https://doi.org/10.1063/1.1510582

Abstract

View articletitled, Dopant profiling on semiconducting sample by scanning capacitance force microscopy

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Fabrication of stable nanopatterns on metals

Daiichiro Sekiba; Stefania Bertero; Renato Buzio; Francesco Buatier de Mongeot; Corrado Boragno; Ugo Valbusa

Appl. Phys. Lett. 81, 2632–2634 (2002) https://doi.org/10.1063/1.1511534

Abstract

View articletitled, Fabrication of stable nanopatterns on metals

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Generation of palladium clusters on Au(111) electrodes: Experiments and simulations

M. Del Popolo; E. Leiva; H. Kleine; J. Meier; U. Stimming; M. Mariscal; W. Schmickler

Appl. Phys. Lett. 81, 2635–2637 (2002) https://doi.org/10.1063/1.1511285

Abstract

View articletitled, Generation of palladium clusters on Au(111) electrodes: Experiments and simulations

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Effect of $H_{2} O$ adsorption on electron transport in a carbon nanotube

Ranjit Pati; Yiming Zhang; Saroj K. Nayak; Pulickel M. Ajayan

Appl. Phys. Lett. 81, 2638–2640 (2002) https://doi.org/10.1063/1.1510969

Abstract

View articletitled, Effect of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">H</mi><mrow><mn>2</mn></mrow></msub><mi mathvariant="normal" xmlns="">O</mi></math> adsorption on electron transport in a carbon nanotube

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Operation of nanomechanical resonant structures in air

L. Sekaric; M. Zalalutdinov; R. B. Bhiladvala; A. T. Zehnder; J. M. Parpia; H. G. Craighead

Appl. Phys. Lett. 81, 2641–2643 (2002) https://doi.org/10.1063/1.1511287

Abstract

View articletitled, Operation of nanomechanical resonant structures in air

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Formation of a quantum dot in a single-walled carbon nanotube using the Al top-gates

J. W. Park; J. B. Choi; K.-H. Yoo

Appl. Phys. Lett. 81, 2644–2646 (2002) https://doi.org/10.1063/1.1510578

Abstract

View articletitled, Formation of a quantum dot in a single-walled carbon nanotube using the Al top-gates

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Raman characterization of boron-doped multiwalled carbon nanotubes

J. Maultzsch; S. Reich; C. Thomsen; S. Webster; R. Czerw; D. L. Carroll; S. M. C. Vieira; P. R. Birkett; C. A. Rego

Appl. Phys. Lett. 81, 2647–2649 (2002) https://doi.org/10.1063/1.1512330

Abstract

View articletitled, Raman characterization of boron-doped multiwalled carbon nanotubes

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DEVICE PHYSICS

Characterization and control of the ${HfO}_{2} / Si (001)$ interfaces

Y. Hoshino; Y. Kido; K. Yamamoto; S. Hayashi; M. Niwa

Appl. Phys. Lett. 81, 2650–2652 (2002) https://doi.org/10.1063/1.1510941

Abstract

View articletitled, Characterization and control of the <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">HfO</mi><mrow><mn>2</mn></mrow></msub><mi xmlns="">/</mi><mi mathvariant="normal" xmlns="">Si</mi><mtext xmlns="">(001)</mtext></math> interfaces

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APPLIED BIOPHYSICS

Laser surgical effects with concentrated solar radiation

Jeffrey M. Gordon; Daniel Feuermann; Mahmoud Huleihil

Appl. Phys. Lett. 81, 2653–2655 (2002) https://doi.org/10.1063/1.1510942

Abstract

View articletitled, Laser surgical effects with concentrated solar radiation

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INTERDISCIPLINARY AND GENERAL PHYSICS

Hydrogen superpermeation resistant to ion sputtering

A. I. Livshits; V. N. Alimov; M. E. Notkin; M. Bacal

Appl. Phys. Lett. 81, 2656–2658 (2002) https://doi.org/10.1063/1.1510961

Abstract

View articletitled, Hydrogen superpermeation resistant to ion sputtering

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COMMENTS

Comment on “Tunnel injection ${In}_{0.4} {Ga}_{0.6} As/GaAs$ quantum dot lasers with 15 GHz modulation bandwidth at room temperature” [Appl. Phys. Lett. 80, 3482 (2002)]

T. Riedl; A. Hangleiter

Appl. Phys. Lett. 81, 2659–2660 (2002) https://doi.org/10.1063/1.1510943

View articletitled, Comment on “Tunnel injection <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">In</mi><mrow><mtext>0.4</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>0.6</mtext></mrow></msub><mi mathvariant="normal" xmlns="">As/GaAs</mi></math> quantum dot lasers with 15 GHz modulation bandwidth at room temperature” [Appl. Phys. Lett. 80, 3482 (2002)]

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Response to “Comment on ‘Tunnel injection ${In}_{0.4} {Ga}_{0.6} As/GaAs$ quantum dot lasers with 15 GHz modulation bandwidth at room temperature’ ” [Appl. Phys. Lett. 81, 2659 (2002)]

P. Bhattacharya; S. Ghosh

Appl. Phys. Lett. 81, 2661–2662 (2002) https://doi.org/10.1063/1.1510944

View articletitled, Response to “Comment on ‘Tunnel injection <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">In</mi><mrow><mtext>0.4</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>0.6</mtext></mrow></msub><mi mathvariant="normal" xmlns="">As/GaAs</mi></math> quantum dot lasers with 15 GHz modulation bandwidth at room temperature’ ” [Appl. Phys. Lett. 81, 2659 (2002)]

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Issues

LASERS, OPTICS, AND OPTOELECTRONICS

PLASMAS AND ELECTRICAL DISCHARGES

STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

ELECTRONIC TRANSPORT AND SEMICONDUCTORS

MAGNETISM AND SUPERCONDUCTIVITY

DIELECTRICS AND FERROELECTRICITY

NANOSCALE SCIENCE AND DESIGN

DEVICE PHYSICS

APPLIED BIOPHYSICS

INTERDISCIPLINARY AND GENERAL PHYSICS

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