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LASERS, OPTICS, AND OPTOELECTRONICS

Fabrication and characterization of nanoscale, ${Er}^{3+}$ -doped, ultratransparent oxy-fluoride glass ceramics

V. K. Tikhomirov; D. Furniss; A. B. Seddon; I. M. Reaney; M. Beggiora; M. Ferrari; M. Montagna; R. Rolli

Appl. Phys. Lett. 81, 1937–1939 (2002) https://doi.org/10.1063/1.1497196

Abstract

View articletitled, Fabrication and characterization of nanoscale, <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">Er</mi><mrow><mtext>3+</mtext></mrow></msup></math>-doped, ultratransparent oxy-fluoride glass ceramics

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Improved brightness of 380 nm GaN light emitting diodes through intentional delay of the nucleation island coalescence

D. D. Koleske; A. J. Fischer; A. A. Allerman; C. C. Mitchell; K. C. Cross; S. R. Kurtz; J. J. Figiel; K. W. Fullmer; W. G. Breiland

Appl. Phys. Lett. 81, 1940–1942 (2002) https://doi.org/10.1063/1.1506793

Abstract

View articletitled, Improved brightness of 380 nm GaN light emitting diodes through intentional delay of the nucleation island coalescence

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Effect of 3 MeV electron irradiation on the photoluminescence properties of Eu-doped GaN

Y. Nakanishi; A. Wakahara; H. Okada; A. Yoshida; T. Ohshima; H. Itoh

Appl. Phys. Lett. 81, 1943–1945 (2002) https://doi.org/10.1063/1.1504873

Abstract

View articletitled, Effect of 3 MeV electron irradiation on the photoluminescence properties of Eu-doped GaN

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Design and fabrication of impurity band-based photonic crystal waveguides for optical delay lines

Y. Sugimoto; S. Lan; S. Nishikawa; N. Ikeda; H. Ishikawa; K. Asakawa

Appl. Phys. Lett. 81, 1946–1948 (2002) https://doi.org/10.1063/1.1506411

Abstract

View articletitled, Design and fabrication of impurity band-based photonic crystal waveguides for optical delay lines

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Truly random number generator based on turbulent electroconvection

J. T. Gleeson

Appl. Phys. Lett. 81, 1949–1951 (2002) https://doi.org/10.1063/1.1507362

Abstract

View articletitled, Truly random number generator based on turbulent electroconvection

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Holographic data storage on nonphotosensitive glass with a single femtosecond laser pulse

Yan Li; Wataru Watanabe; Kazuyoshi Itoh; Xiudong Sun

Appl. Phys. Lett. 81, 1952–1954 (2002) https://doi.org/10.1063/1.1506410

Abstract

View articletitled, Holographic data storage on nonphotosensitive glass with a single femtosecond laser pulse

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Optical properties of a light-emitting polymer directly patterned by soft lithography

J. R. Lawrence; P. Andrew; W. L. Barnes; M. Buck; G. A. Turnbull; I. D. W. Samuel

Appl. Phys. Lett. 81, 1955–1957 (2002) https://doi.org/10.1063/1.1502187

Abstract

View articletitled, Optical properties of a light-emitting polymer directly patterned by soft lithography

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Multiple-wavelength operation of electroabsorption intensity modulator array fabricated using the one-step quantum well intermixing process

S. L. Ng; H. S. Lim; Y. L. Lam; Y. C. Chan; B. S. Ooi; V. Aimez; J. Beauvais; J. Beerens

Appl. Phys. Lett. 81, 1958–1960 (2002) https://doi.org/10.1063/1.1508159

Abstract

View articletitled, Multiple-wavelength operation of electroabsorption intensity modulator array fabricated using the one-step quantum well intermixing process

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PLASMAS AND ELECTRICAL DISCHARGES

Effect of charge exchange ions upon Langmuir probe current

Zoltan Sternovsky; Scott Robertson

Appl. Phys. Lett. 81, 1961–1963 (2002) https://doi.org/10.1063/1.1506946

Abstract

View articletitled, Effect of charge exchange ions upon Langmuir probe current

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Subcritical microwave streamer discharge at the surface of a polymer foil

S. Popović; L. Vušković; I. I. Esakov; L. P. Gratchev; K. V. Khodataev

Appl. Phys. Lett. 81, 1964–1965 (2002) https://doi.org/10.1063/1.1506787

Abstract

View articletitled, Subcritical microwave streamer discharge at the surface of a polymer foil

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High-energy electrons near the dielectric-plasma boundary in a large-area surface-wave plasma excited at 915 MHz

Masaaki Nagatsu; Takahiko Niwa; Hideo Sugai

Appl. Phys. Lett. 81, 1966–1968 (2002) https://doi.org/10.1063/1.1506186

Abstract

View articletitled, High-energy electrons near the dielectric-plasma boundary in a large-area surface-wave plasma excited at 915 MHz

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Contamination due to memory effects in filtered vacuum arc plasma deposition systems

D. R. Martins; M. C. Salvadori; P. Verdonck; I. G. Brown

Appl. Phys. Lett. 81, 1969–1971 (2002) https://doi.org/10.1063/1.1506019

Abstract

View articletitled, Contamination due to memory effects in filtered vacuum arc plasma deposition systems

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Electron temperature in a sodium–iodide lighting plasma

D. Karabourniotis; E. Drakakis

Appl. Phys. Lett. 81, 1972–1974 (2002) https://doi.org/10.1063/1.1506415

Abstract

View articletitled, Electron temperature in a sodium–iodide lighting plasma

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Spherulitic growth kinetics of protein crystals

P. S. Chow; X. Y. Liu; J. Zhang; R. B. H. Tan

Appl. Phys. Lett. 81, 1975–1977 (2002) https://doi.org/10.1063/1.1506208

Abstract

View articletitled, Spherulitic growth kinetics of protein crystals

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Increased nucleation temperature of ${NiSi}_{2}$ in the reaction of Ni thin films with ${Si}_{1−x} {Ge}_{x}$

J. Seger; S.-L. Zhang; D. Mangelinck; H. H. Radamson

Appl. Phys. Lett. 81, 1978–1980 (2002) https://doi.org/10.1063/1.1498868

Abstract

View articletitled, Increased nucleation temperature of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">NiSi</mi><mrow><mn>2</mn></mrow></msub></math> in the reaction of Ni thin films with <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Si</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ge</mi><mrow><mi>x</mi></mrow></msub></math>

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Characterization of surface layers in Zn-diffused ${LiNbO}_{3}$ waveguides by heavy ion elastic recoil detection

O. Espeso-Gil; G. Garcı́a; F. Agulló-López; A. Climent-Font; T. Sajavaara; M. Domenech; E. Cantelar; G. Lifante

Appl. Phys. Lett. 81, 1981–1983 (2002) https://doi.org/10.1063/1.1506405

Abstract

View articletitled, Characterization of surface layers in Zn-diffused <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">LiNbO</mi><mrow><mn>3</mn></mrow></msub></math> waveguides by heavy ion elastic recoil detection

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Cross-sectional imaging of pendeo-epitaxial GaN using continuous-wave two-photon microphotoluminescence

P. J. Schuck; R. D. Grober; A. M. Roskowski; S. Einfeldt; R. F. Davis

Appl. Phys. Lett. 81, 1984–1986 (2002) https://doi.org/10.1063/1.1506948

Abstract

View articletitled, Cross-sectional imaging of pendeo-epitaxial GaN using continuous-wave two-photon microphotoluminescence

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Characterization of a diamond $p-n$ junction using electron-beam-induced current and cathodoluminescence

Takashi Sekiguchi; Satoshi Koizumi

Appl. Phys. Lett. 81, 1987–1989 (2002) https://doi.org/10.1063/1.1506409

Abstract

View articletitled, Characterization of a diamond <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">p-n</mi></math> junction using electron-beam-induced current and cathodoluminescence

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Polarity determination for GaN thin films by electron energy-loss spectroscopy

X. Kong; G. Q. Hu; X. F. Duan; Y. Lu; X. L. Liu

Appl. Phys. Lett. 81, 1990–1992 (2002) https://doi.org/10.1063/1.1504876

Abstract

View articletitled, Polarity determination for GaN thin films by electron energy-loss spectroscopy

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Microstructural properties of Eu-doped GaN luminescent powders

O. Contreras; S. Srinivasan; F. A. Ponce; G. A. Hirata; F. Ramos; J. McKittrick

Appl. Phys. Lett. 81, 1993–1995 (2002) https://doi.org/10.1063/1.1507355

Abstract

View articletitled, Microstructural properties of Eu-doped GaN luminescent powders

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Alternative mechanism for misfit dislocation generation during high-temperature Ge(Si)/Si (001) island growth

J. Zou; X. Z. Liao; D. J. H. Cockayne; Z. M. Jiang

Appl. Phys. Lett. 81, 1996–1998 (2002) https://doi.org/10.1063/1.1506414

Abstract

View articletitled, Alternative mechanism for misfit dislocation generation during high-temperature Ge(Si)/Si (001) island growth

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Visible luminescence from silicon surfaces microstructured in air

C. Wu; C. H. Crouch; L. Zhao; E. Mazur

Appl. Phys. Lett. 81, 1999–2001 (2002) https://doi.org/10.1063/1.1504868

Abstract

View articletitled, Visible luminescence from silicon surfaces microstructured in air

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Optical loss mechanisms in GeSiON planar waveguides

A. V. Osinsky; R. A. Bellman; I. A. Akwani; P. A. Sachenik; S. L. Logunov; J. W. McCamy

Appl. Phys. Lett. 81, 2002–2004 (2002) https://doi.org/10.1063/1.1507611

Abstract

View articletitled, Optical loss mechanisms in GeSiON planar waveguides

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Probing the step structure of buried metal/semiconductor interfaces using quantized electron states: The case of Pb on $Si (111)$ $6 \times 6 - Au$

Hongbin Yu; C.-S. Jiang; Ph. Ebert; C.-K. Shih

Appl. Phys. Lett. 81, 2005–2007 (2002) https://doi.org/10.1063/1.1506404

Abstract

View articletitled, Probing the step structure of buried metal/semiconductor interfaces using quantized electron states: The case of Pb on <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">Si</mi><mtext xmlns="">(111)</mtext></math> <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">6</mi><mi xmlns="">×</mi><mi mathvariant="normal" xmlns="">6</mi><mi xmlns="">-</mi><mi mathvariant="normal" xmlns="">Au</mi></math>

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Chemical bonding of hydrogen in ${MgH}_{2}$

T. Noritake; M. Aoki; S. Towata; Y. Seno; Y. Hirose; E. Nishibori; M. Takata; M. Sakata

Appl. Phys. Lett. 81, 2008–2010 (2002) https://doi.org/10.1063/1.1506007

Abstract

View articletitled, Chemical bonding of hydrogen in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">MgH</mi><mrow><mn>2</mn></mrow></msub></math>

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Electric current rectification by an all-organic electrochemical device

Miaoxiang Chen; David Nilsson; Thomas Kugler; Magnus Berggren; Tommi Remonen

Appl. Phys. Lett. 81, 2011–2013 (2002) https://doi.org/10.1063/1.1506785

Abstract

View articletitled, Electric current rectification by an all-organic electrochemical device

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Effect of structure ordering on charge carrier mobilities in green-emitting poly(phenylene vinylene)s

Liang-Sheng Yu; Hao-En Tseng; Hsin-Hung Lu; Show-An Chen

Appl. Phys. Lett. 81, 2014–2016 (2002) https://doi.org/10.1063/1.1506209

Abstract

View articletitled, Effect of structure ordering on charge carrier mobilities in green-emitting poly(phenylene vinylene)s

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${CuGaSe}_{2}$ solar cell cross section studied by Kelvin probe force microscopy in ultrahigh vacuum

Th. Glatzel; D. Fuertes Marrón; Th. Schedel-Niedrig; S. Sadewasser; M. Ch. Lux-Steiner

Appl. Phys. Lett. 81, 2017–2019 (2002) https://doi.org/10.1063/1.1506205

Abstract

View articletitled, <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CuGaSe</mi><mrow><mn>2</mn></mrow></msub></math> solar cell cross section studied by Kelvin probe force microscopy in ultrahigh vacuum

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Positively charged magnetoexciton transitions in a p-doped ${GaAs/Al}_{0.45} {Ga}_{0.55} As$ single heterojunction

Yongmin Kim; H. W. Jiang

Appl. Phys. Lett. 81, 2020–2022 (2002) https://doi.org/10.1063/1.1506418

Abstract

View articletitled, Positively charged magnetoexciton transitions in a p-doped <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">GaAs/Al</mi><mrow><mtext>0.45</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>0.55</mtext></mrow></msub><mi mathvariant="normal" xmlns="">As</mi></math> single heterojunction

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Fabrication of quantum point contacts by engraving $GaAs/AlGaAs$ heterostructures with a diamond tip

J. Regul; U. F. Keyser; M. Paesler; F. Hohls; U. Zeitler; R. J. Haug; A. Malavé; E. Oesterschulze; D. Reuter; A. D. Wieck

Appl. Phys. Lett. 81, 2023–2025 (2002) https://doi.org/10.1063/1.1506417

Abstract

View articletitled, Fabrication of quantum point contacts by engraving <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">GaAs/AlGaAs</mi></math> heterostructures with a diamond tip

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MAGNETISM AND SUPERCONDUCTIVITY

High critical current density and improved irreversibility field in bulk ${MgB}_{2}$ made by a scaleable, nanoparticle addition route

J. Wang; Y. Bugoslavsky; A. Berenov; L. Cowey; A. D. Caplin; L. F. Cohen; J. L. MacManus Driscoll; L. D. Cooley; X. Song; D. C. Larbalestier

Appl. Phys. Lett. 81, 2026–2028 (2002) https://doi.org/10.1063/1.1506184

Abstract

View articletitled, High critical current density and improved irreversibility field in bulk <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">MgB</mi><mrow><mn>2</mn></mrow></msub></math> made by a scaleable, nanoparticle addition route

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Exchange-coupled Sm–Co/Nd–Co nanomagnets: correlation between soft phase anisotropy and exchange field

Z. J. Guo; J. S. Jiang; J. E. Pearson; S. D. Bader; J. P. Liu

Appl. Phys. Lett. 81, 2029–2031 (2002) https://doi.org/10.1063/1.1504869

Abstract

View articletitled, Exchange-coupled Sm–Co/Nd–Co nanomagnets: correlation between soft phase anisotropy and exchange field

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Tunable remanent state resonance frequency in arrays of magnetic nanowires

Armando Encinas; Marc Demand; Laurent Vila; Luc Piraux; Isabelle Huynen

Appl. Phys. Lett. 81, 2032–2034 (2002) https://doi.org/10.1063/1.1507610

Abstract

View articletitled, Tunable remanent state resonance frequency in arrays of magnetic nanowires

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Antiparallel ruthenium coupling in doped ${La}_{1.2} {Sr}_{1.8} {Mn}_{2−x} {Ru}_{x} O_{7}$

F. Weigand; S. Gold; A. Schmid; J. Geissler; E. Goering; K. Dörr; G. Krabbes; K. Ruck

Appl. Phys. Lett. 81, 2035–2037 (2002) https://doi.org/10.1063/1.1506792

Abstract

View articletitled, Antiparallel ruthenium coupling in doped <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">La</mi><mrow><mtext>1.2</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Sr</mi><mrow><mtext>1.8</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Mn</mi><mrow><mtext>2−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ru</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>7</mn></mrow></msub></math>

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Effect of competing energies on the transition noise of oriented magnetic media

C. H. Hee; J. P. Wang

Appl. Phys. Lett. 81, 2038–2040 (2002) https://doi.org/10.1063/1.1506786

Abstract

View articletitled, Effect of competing energies on the transition noise of oriented magnetic media

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DIELECTRICS AND FERROELECTRICITY

Dielectric property and thermal stability of ${HfO}_{2}$ on silicon

Y.-S. Lin; R. Puthenkovilakam; J. P. Chang

Appl. Phys. Lett. 81, 2041–2043 (2002) https://doi.org/10.1063/1.1506207

Abstract

View articletitled, Dielectric property and thermal stability of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">HfO</mi><mrow><mn>2</mn></mrow></msub></math> on silicon

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Imaging and engineering the nanoscale-domain structure of a ${Sr}_{0.61} {Ba}_{0.39} {Nb}_{2} O_{6}$ crystal using a scanning force microscope

K. Terabe; S. Takekawa; M. Nakamura; K. Kitamura; S. Higuchi; Y. Gotoh; A. Gruverman

Appl. Phys. Lett. 81, 2044–2046 (2002) https://doi.org/10.1063/1.1506945

Abstract

View articletitled, Imaging and engineering the nanoscale-domain structure of a <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Sr</mi><mrow><mtext>0.61</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ba</mi><mrow><mtext>0.39</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Nb</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>6</mn></mrow></msub></math> crystal using a scanning force microscope

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Determination of the microwave permittivities of nematic liquid crystals using a single-metallic slit technique

Fuzi Yang; J. R. Sambles

Appl. Phys. Lett. 81, 2047–2049 (2002) https://doi.org/10.1063/1.1507615

Abstract

View articletitled, Determination of the microwave permittivities of nematic liquid crystals using a single-metallic slit technique

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Trap evaluations of metal/oxide/silicon field-effect transistors with high-k gate dielectric using charge pumping method

Ga-Won Lee; Jae-Hee Lee; Hae-Wang Lee; Myoung-Kyu Park; Dae-Gwan Kang; Hee-Koo Youn

Appl. Phys. Lett. 81, 2050–2052 (2002) https://doi.org/10.1063/1.1506776

Abstract

View articletitled, Trap evaluations of metal/oxide/silicon field-effect transistors with high-k gate dielectric using charge pumping method

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Effect of Hf metal predeposition on the properties of sputtered ${HfO}_{2} / Hf$ stacked gate dielectrics

Kazuhiko Yamamoto; Shigenori Hayashi; Masafumi Kubota; Masaaki Niwa

Appl. Phys. Lett. 81, 2053–2055 (2002) https://doi.org/10.1063/1.1506782

Abstract

View articletitled, Effect of Hf metal predeposition on the properties of sputtered <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">HfO</mi><mrow><mn>2</mn></mrow></msub><mi xmlns="">/</mi><mi mathvariant="normal" xmlns="">Hf</mi></math> stacked gate dielectrics

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Epitaxial thin films of the giant-dielectric-constant material ${CaCu}_{3} {Ti}_{4} O_{12}$ grown by pulsed-laser deposition

W. Si; E. M. Cruz; P. D. Johnson; P. W. Barnes; P. Woodward; A. P. Ramirez

Appl. Phys. Lett. 81, 2056–2058 (2002) https://doi.org/10.1063/1.1506951

Abstract

View articletitled, Epitaxial thin films of the giant-dielectric-constant material <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CaCu</mi><mrow><mn>3</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ti</mi><mrow><mn>4</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>12</mn></mrow></msub></math> grown by pulsed-laser deposition

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Mechanical properties related to the relaxor-ferroelectric phase transition of titanium-doped lead magnesium niobate

P. Bao; F. Yan; W. Li; Y. R. Dai; H. M. Shen; J. S. Zhu; Y. N. Wang; Helen L. W. Chan; Chung-Loong Choy

Appl. Phys. Lett. 81, 2059–2061 (2002) https://doi.org/10.1063/1.1498498

Abstract

View articletitled, Mechanical properties related to the relaxor-ferroelectric phase transition of titanium-doped lead magnesium niobate

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Dielectric mapping of a $Pb ({Ni}_{1/3} {Nb}_{2/3}) O_{3} - {PbZrO}_{3} - {PbTiO}_{3}$ ternary phase spread

Hauyee Chang; K.-M. Yu; Y. Dong; Xiao-Dong Xiang

Appl. Phys. Lett. 81, 2062–2064 (2002) https://doi.org/10.1063/1.1501758

Abstract

View articletitled, Dielectric mapping of a <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">Pb</mi><mi xmlns="">(</mi><msub xmlns=""><mi mathvariant="normal">Ni</mi><mrow><mtext>1/3</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Nb</mi><mrow><mtext>2/3</mtext></mrow></msub><mi xmlns="">)</mi><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>3</mn></mrow></msub><mi xmlns="">–</mi><msub xmlns=""><mi mathvariant="normal">PbZrO</mi><mrow><mn>3</mn></mrow></msub><mi xmlns="">–</mi><msub xmlns=""><mi mathvariant="normal">PbTiO</mi><mrow><mn>3</mn></mrow></msub></math> ternary phase spread

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Growth and properties of (001) ${BiScO}_{3} - {PbTiO}_{3}$ epitaxial films

Takeshi Yoshimura; Susan Trolier-McKinstry

Appl. Phys. Lett. 81, 2065–2066 (2002) https://doi.org/10.1063/1.1507352

Abstract

View articletitled, Growth and properties of (001) <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">BiScO</mi><mrow><mn>3</mn></mrow></msub><mi xmlns="">–</mi><msub xmlns=""><mi mathvariant="normal">PbTiO</mi><mrow><mn>3</mn></mrow></msub></math> epitaxial films

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Ferroelectric (116) ${SrBi}_{2} {Nb}_{2} O_{9}$ thin films epitaxially grown by pulsed laser deposition on epitaxial (110) Pt/(110) ${SrTiO}_{3}$ electrode

J. R. Duclère; M. Guilloux-Viry; A. Perrin; E. Cattan; C. Soyer; D. Rèmiens

Appl. Phys. Lett. 81, 2067–2069 (2002) https://doi.org/10.1063/1.1504179

Abstract

View articletitled, Ferroelectric (116) <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SrBi</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Nb</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>9</mn></mrow></msub></math> thin films epitaxially grown by pulsed laser deposition on epitaxial (110) Pt/(110) <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SrTiO</mi><mrow><mn>3</mn></mrow></msub></math> electrode

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NANOSCALE SCIENCE AND DESIGN

Fabrication and characterization of gated field emitter arrays with self-aligned carbon nanotubes grown by chemical vapor deposition

In Taek Han; Ha Jin Kim; Young-Jun Park; Naesung Lee; Jae Eun Jang; Jung Woo Kim; Jae Eun Jung; Jong Min Kim

Appl. Phys. Lett. 81, 2070–2072 (2002) https://doi.org/10.1063/1.1506408

Abstract

View articletitled, Fabrication and characterization of gated field emitter arrays with self-aligned carbon nanotubes grown by chemical vapor deposition

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X-ray diffraction and nanoindentation studies of nanocrystalline graphite at high pressures

J. Reed Patterson; Anatoliy Kudryavtsev; Yogesh K. Vohra

Appl. Phys. Lett. 81, 2073–2075 (2002) https://doi.org/10.1063/1.1508169

Abstract

View articletitled, X-ray diffraction and nanoindentation studies of nanocrystalline graphite at high pressures

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Lattice contraction in free-standing CdSe nanocrystals

Jia-Yu Zhang; Xiao-Yong Wang; Min Xiao; L. Qu; X. Peng

Appl. Phys. Lett. 81, 2076–2078 (2002) https://doi.org/10.1063/1.1507613

Abstract

View articletitled, Lattice contraction in free-standing CdSe nanocrystals

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Energy level engineering in InAs quantum dot nanostructures

L. Rebohle; F. F. Schrey; S. Hofer; G. Strasser; K. Unterrainer

Appl. Phys. Lett. 81, 2079–2081 (2002) https://doi.org/10.1063/1.1506419

Abstract

View articletitled, Energy level engineering in InAs quantum dot nanostructures

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Analysis of heavily tailed size distributions of ZnTe/ZnSe quantum dot structures by using the bootstrap methodology

Johnson Lee; W. C. Chou; G. J. Jan

Appl. Phys. Lett. 81, 2082–2084 (2002) https://doi.org/10.1063/1.1506407

Abstract

View articletitled, Analysis of heavily tailed size distributions of ZnTe/ZnSe quantum dot structures by using the bootstrap methodology

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Zinc oxide nanowires on carbon nanotubes

Hansoo Kim; Wolfgang Sigmund

Appl. Phys. Lett. 81, 2085–2087 (2002) https://doi.org/10.1063/1.1504877

Abstract

View articletitled, Zinc oxide nanowires on carbon nanotubes

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Femtosecond nonlinear optical properties of carbon nanoparticles

Dan Li; Ye Liu; Heqing Yang; Shixiong Qian

Appl. Phys. Lett. 81, 2088–2090 (2002) https://doi.org/10.1063/1.1506412

Abstract

View articletitled, Femtosecond nonlinear optical properties of carbon nanoparticles

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Direct tunneling leakage current and scalability of alternative gate dielectrics

Yee-Chia Yeo; Tsu-Jae King; Chenming Hu

Appl. Phys. Lett. 81, 2091–2093 (2002) https://doi.org/10.1063/1.1506941

Abstract

View articletitled, Direct tunneling leakage current and scalability of alternative gate dielectrics

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Using ultrathin elastomeric stamps to reduce pattern distortion in microcontact printing

Massimo Tormen; Tatiana Borzenko; Bernd Steffen; Georg Schmidt; Laurens W. Molenkamp

Appl. Phys. Lett. 81, 2094–2096 (2002) https://doi.org/10.1063/1.1505747

Abstract

View articletitled, Using ultrathin elastomeric stamps to reduce pattern distortion in microcontact printing

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Synthesis and characterization of single-wall carbon nanotube–amorphous diamond thin-film composites

H. Schittenhelm; D. B. Geohegan; G. E. Jellison; A. A. Puretzky; M. J. Lance; P. F. Britt

Appl. Phys. Lett. 81, 2097–2099 (2002) https://doi.org/10.1063/1.1506947

Abstract

View articletitled, Synthesis and characterization of single-wall carbon nanotube–amorphous diamond thin-film composites

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Force detection using a fiber-optic cantilever

Raffi Budakian; Seth J. Putterman

Appl. Phys. Lett. 81, 2100–2102 (2002) https://doi.org/10.1063/1.1503874

Abstract

View articletitled, Force detection using a fiber-optic cantilever

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DEVICE PHYSICS

Observation of enhanced transport in carbon-doped InGaAsN after in situ anneal and its impact on performance of NpN InGaP/InGaAsN heterojunction bipolar transistors

C. Monier; A. G. Baca; S. Z. Sun; E. Armour; F. Newman; H. Q. Hou

Appl. Phys. Lett. 81, 2103–2105 (2002) https://doi.org/10.1063/1.1506406

Abstract

View articletitled, Observation of enhanced transport in carbon-doped InGaAsN after in situ anneal and its impact on performance of NpN InGaP/InGaAsN heterojunction bipolar transistors

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Combinatorial study of the long-term stability of organic thin-film solar cells

Helmut Hänsel; Heiko Zettl; Georg Krausch; Christoph Schmitz; Roman Kisselev; Mukundan Thelakkat; Hans-Werner Schmidt

Appl. Phys. Lett. 81, 2106–2108 (2002) https://doi.org/10.1063/1.1506203

Abstract

View articletitled, Combinatorial study of the long-term stability of organic thin-film solar cells

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Oxidation of metals at the chromium oxide interface

Ruihua Cheng; C. N. Borca; N. Pilet; Bo Xu; L. Yuan; B. Doudin; S. H. Liou; P. A. Dowben

Appl. Phys. Lett. 81, 2109–2111 (2002) https://doi.org/10.1063/1.1506942

Abstract

View articletitled, Oxidation of metals at the chromium oxide interface

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Submicron imaging of buried integrated circuit structures using scanning confocal electron microscopy

Sean P. Frigo; Zachary H. Levine; Nestor J. Zaluzec

Appl. Phys. Lett. 81, 2112–2114 (2002) https://doi.org/10.1063/1.1506010

Abstract

View articletitled, Submicron imaging of buried integrated circuit structures using scanning confocal electron microscopy

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Large threshold hysteresis in a narrow AlGaAs/GaAs channel with embedded quantum dots

A. Schliemann; L. Worschech; S. Reitzenstein; S. Kaiser; A. Forchel

Appl. Phys. Lett. 81, 2115–2117 (2002) https://doi.org/10.1063/1.1507607

Abstract

View articletitled, Large threshold hysteresis in a narrow AlGaAs/GaAs channel with embedded quantum dots

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INTERDISCIPLINARY AND GENERAL PHYSICS

Single-molecule near-field optical energy transfer microscopy

W. Trabesinger; A. Kramer; M. Kreiter; B. Hecht; U. P. Wild

Appl. Phys. Lett. 81, 2118–2120 (2002) https://doi.org/10.1063/1.1506952

Abstract

View articletitled, Single-molecule near-field optical energy transfer microscopy

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Radiography of nonaxisymmetric objects: An onion-peeling inversion method

T. Schwierz-Iosefzon; A. Notea; M. Deutsch

Appl. Phys. Lett. 81, 2121–2123 (2002) https://doi.org/10.1063/1.1506183

Abstract

View articletitled, Radiography of nonaxisymmetric objects: An onion-peeling inversion method

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Extraction of height probability density of random rough surfaces from the central δ-peak of angle-resolved light scattering using the optical inversion algorithm

Chuanfu Cheng; Dongping Qi; Shuyun Teng; Jianping Chen; Tianqing Jia; Zhizhan Xu

Appl. Phys. Lett. 81, 2124–2126 (2002) https://doi.org/10.1063/1.1506950

Abstract

View articletitled, Extraction of height probability density of random rough surfaces from the central δ-peak of angle-resolved light scattering using the optical inversion algorithm

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Negative group velocity pulse tunneling through a coaxial photonic crystal

J. N. Munday; W. M. Robertson

Appl. Phys. Lett. 81, 2127–2129 (2002) https://doi.org/10.1063/1.1508172

Abstract

View articletitled, Negative group velocity pulse tunneling through a coaxial photonic crystal

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COMMENTS

Comment on “Efficient electrical spin injection from a magnetic metal/tunnel barrier contact into a semiconductor” [Appl. Phys. Lett. 80, 1240 (2002)]

R. Jansen

Appl. Phys. Lett. 81, 2130 (2002) https://doi.org/10.1063/1.1507360

View articletitled, Comment on “Efficient electrical spin injection from a magnetic metal/tunnel barrier contact into a semiconductor” [Appl. Phys. Lett. 80, 1240 (2002)]

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Response to “Comment on ‘Efficient electrical spin injection from a magnetic metal/tunnel barrier contact into a semiconductor’ ” [Appl. Phys. Lett. 81, 2130 (2002)]

A. T. Hanbicki; B. T. Jonker

Appl. Phys. Lett. 81, 2131–2132 (2002) https://doi.org/10.1063/1.1507361

View articletitled, Response to “Comment on ‘Efficient electrical spin injection from a magnetic metal/tunnel barrier contact into a semiconductor’ ” [Appl. Phys. Lett. 81, 2130 (2002)]

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LASERS, OPTICS, AND OPTOELECTRONICS

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

ELECTRONIC TRANSPORT AND SEMICONDUCTORS

MAGNETISM AND SUPERCONDUCTIVITY

DIELECTRICS AND FERROELECTRICITY

NANOSCALE SCIENCE AND DESIGN

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