Skip Nav Destination

Issues

Select Decade

Select Year

Issue

LASERS, OPTICS, AND OPTOELECTRONICS

Time-resolved coherent anti-Stokes Raman scattering microscopy: Imaging based on Raman free induction decay

Andreas Volkmer; Lewis D. Book; X. Sunney Xie

Appl. Phys. Lett. 80, 1505–1507 (2002) https://doi.org/10.1063/1.1456262

Abstract

View articletitled, Time-resolved coherent anti-Stokes Raman scattering microscopy: Imaging based on Raman free induction decay

Open the PDF for in another window

Holographic fabrication of multiple layers of grating inside soda–lime glass with femtosecond laser pulses

Yan Li; Wataru Watanabe; Kazuhiro Yamada; Taishi Shinagawa; Kazuyoshi Itoh; Junji Nishii; Yongyuan Jiang

Appl. Phys. Lett. 80, 1508–1510 (2002) https://doi.org/10.1063/1.1457524

Abstract

View articletitled, Holographic fabrication of multiple layers of grating inside soda–lime glass with femtosecond laser pulses

Open the PDF for in another window

Strain relaxation effect in microdisk lasers with compressively strained quantum wells

Masayuki Fujita; Reona Ushigome; Toshihiko Baba

Appl. Phys. Lett. 80, 1511–1513 (2002) https://doi.org/10.1063/1.1456554

Abstract

View articletitled, Strain relaxation effect in microdisk lasers with compressively strained quantum wells

Open the PDF for in another window

Integrated platform for silicon photonic crystal devices at near-infrared wavelengths

Lu Chen; Y. Suzuki; Glenn E. Kohnke

Appl. Phys. Lett. 80, 1514–1516 (2002) https://doi.org/10.1063/1.1457525

Abstract

View articletitled, Integrated platform for silicon photonic crystal devices at near-infrared wavelengths

Open the PDF for in another window

Experimental studies of two-dimensional coaxial Bragg structures for a high-power free-electron maser

A. W. Cross; I. V. Konoplev; K. Ronald; A. D. R. Phelps; W. He; C. G. Whyte; N. S. Ginzburg; N. Yu. Peskov; A. S. Sergeev

Appl. Phys. Lett. 80, 1517–1519 (2002) https://doi.org/10.1063/1.1456553

Abstract

View articletitled, Experimental studies of two-dimensional coaxial Bragg structures for a high-power free-electron maser

Open the PDF for in another window

Photonic band gap formation by microstrip ring: A way to reduce the size of microwave photonic band gap structures

Chul-Sik Kee; Mi-Young Jang; Ikmo Park; H. Lim; Jae-Eun Kim; Hae Yong Park; Jung Il Lee

Appl. Phys. Lett. 80, 1520–1522 (2002) https://doi.org/10.1063/1.1458069

Abstract

View articletitled, Photonic band gap formation by microstrip ring: A way to reduce the size of microwave photonic band gap structures

Open the PDF for in another window

Kinetics of surface relief gratings tailored by laser-induced photochemical deposition

Emmanuel Hugonnot; Jean-Pierre Delville

Appl. Phys. Lett. 80, 1523–1525 (2002) https://doi.org/10.1063/1.1455696

Abstract

View articletitled, Kinetics of surface relief gratings tailored by laser-induced photochemical deposition

Open the PDF for in another window

PLASMAS AND ELECTRICAL DISCHARGES

Heat flux distribution on a substrate in capacitively coupled radio-frequency discharges

K. Takaki; D. Koseki; T. Fujiwara

Appl. Phys. Lett. 80, 1526–1528 (2002) https://doi.org/10.1063/1.1456551

Abstract

View articletitled, Heat flux distribution on a substrate in capacitively coupled radio-frequency discharges

Open the PDF for in another window

STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Realization of band gap above 5.0 eV in metastable cubic-phase ${Mg}_{x} {Zn}_{1−x} O$ alloy films

S. Choopun; R. D. Vispute; W. Yang; R. P. Sharma; T. Venkatesan; H. Shen

Appl. Phys. Lett. 80, 1529–1531 (2002) https://doi.org/10.1063/1.1456266

Abstract

View articletitled, Realization of band gap above 5.0 eV in metastable cubic-phase <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Mg</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Zn</mi><mrow><mtext>1−x</mtext></mrow></msub><mi mathvariant="normal" xmlns="">O</mi></math> alloy films

Open the PDF for in another window

Mechanism of fatigue in micron-scale films of polycrystalline silicon for microelectromechanical systems

C. L. Muhlstein; E. A. Stach; R. O. Ritchie

Appl. Phys. Lett. 80, 1532–1534 (2002) https://doi.org/10.1063/1.1455142

Abstract

View articletitled, Mechanism of fatigue in micron-scale films of polycrystalline silicon for microelectromechanical systems

Open the PDF for in another window

Green phosphorescence of ${CaAl}_{2} O_{4} : {Tb}^{3+}, {Ce}^{3+}$ through persistence energy transfer

D. Jia; R. S. Meltzer; W. M. Yen; W. Jia; X. Wang

Appl. Phys. Lett. 80, 1535–1537 (2002) https://doi.org/10.1063/1.1456955

Abstract

View articletitled, Green phosphorescence of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CaAl</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>4</mn></mrow></msub><mi xmlns="">:</mi><msup xmlns=""><mi mathvariant="normal">Tb</mi><mrow><mtext>3+</mtext></mrow></msup><mi xmlns="">,</mi><msup xmlns=""><mi mathvariant="normal">Ce</mi><mrow><mtext>3+</mtext></mrow></msup></math> through persistence energy transfer

Open the PDF for in another window

Tuning polar anchoring energy through chemical modification of photodimerized surfaces

Devanand Shenoy; Leonid Beresnev; David Holt; Ranganathan Shashidhar

Appl. Phys. Lett. 80, 1538–1540 (2002) https://doi.org/10.1063/1.1456546

Abstract

View articletitled, Tuning polar anchoring energy through chemical modification of photodimerized surfaces

Open the PDF for in another window

Strain relaxation behavior of ${In}_{x} {Ga}_{1−x} As$ quantum wells on vicinal GaAs $(111)B$ substrates

M. Gutiérrez; D. González; G. Aragón; R. Garcı́a; M. Hopkinson; J. J. Sánchez; I. Izpura

Appl. Phys. Lett. 80, 1541–1543 (2002) https://doi.org/10.1063/1.1455691

Abstract

View articletitled, Strain relaxation behavior of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">In</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>1−x</mtext></mrow></msub><mi mathvariant="normal" xmlns="">As</mi></math> quantum wells on vicinal GaAs <math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">(111)B</mtext></math> substrates

Open the PDF for in another window

Closely stacked InAs/GaAs quantum dots grown at low growth rate

H. Heidemeyer; S. Kiravittaya; C. Müller; N. Y. Jin-Phillipp; O. G. Schmidt

Appl. Phys. Lett. 80, 1544–1546 (2002) https://doi.org/10.1063/1.1456954

Abstract

View articletitled, Closely stacked InAs/GaAs quantum dots grown at low growth rate

Open the PDF for in another window

Stress-based prediction of dislocation generation in GaN during lateral epitaxial overgrowth

Z. Feng; E. Lovell; R. Engelstad; T. Kuech; S. Babcock

Appl. Phys. Lett. 80, 1547–1549 (2002) https://doi.org/10.1063/1.1454210

Abstract

View articletitled, Stress-based prediction of dislocation generation in GaN during lateral epitaxial overgrowth

Open the PDF for in another window

Misfit defect formation in thick GaN layers grown on sapphire by hydride vapor phase epitaxy

E. Valcheva; T. Paskova; P. O. Å. Persson; L. Hultman; B. Monemar

Appl. Phys. Lett. 80, 1550–1552 (2002) https://doi.org/10.1063/1.1455698

Abstract

View articletitled, Misfit defect formation in thick GaN layers grown on sapphire by hydride vapor phase epitaxy

Open the PDF for in another window

Phonon excitations and thermodynamic properties of cubic III nitrides

D. N. Talwar

Appl. Phys. Lett. 80, 1553–1555 (2002) https://doi.org/10.1063/1.1456545

Abstract

View articletitled, Phonon excitations and thermodynamic properties of cubic III nitrides

Open the PDF for in another window

Factors influencing glass formation in rapidly solidified Si,Ge–Ni and Si,Ge–Ni–Nd alloys

Dmitri V. Louzguine; Larissa V. Louzguina; Akihisa Inoue

Appl. Phys. Lett. 80, 1556–1558 (2002) https://doi.org/10.1063/1.1457522

Abstract

View articletitled, Factors influencing glass formation in rapidly solidified Si,Ge–Ni and Si,Ge–Ni–Nd alloys

Open the PDF for in another window

Er-related luminescence in Er,O-codoped InGaAs/GaAs multiple-quantum-well structures grown by organometallic vapor phase epitaxy

A. Koizumi; H. Moriya; N. Watanabe; Y. Nonogaki; Y. Fujiwara; Y. Takeda

Appl. Phys. Lett. 80, 1559–1561 (2002) https://doi.org/10.1063/1.1456971

Abstract

View articletitled, Er-related luminescence in Er,O-codoped InGaAs/GaAs multiple-quantum-well structures grown by organometallic vapor phase epitaxy

Open the PDF for in another window

Formation of the GaN conversion layer in GaP (111)B wafers using ammonia gas

K. Kuriyama; K. Nagasawa; Y. Suzuki; K. Kushida

Appl. Phys. Lett. 80, 1562–1564 (2002) https://doi.org/10.1063/1.1456953

Abstract

View articletitled, Formation of the GaN conversion layer in GaP (111)B wafers using ammonia gas

Open the PDF for in another window

Effect of metal clusters on the swelling of gold–fluorocarbon–polymer composite films

Annalisa Convertino; Antonio Valentini; Anna Bassi; Nicola Cioffi; Luisa Torsi; Emilio N. M. Cirillo

Appl. Phys. Lett. 80, 1565–1567 (2002) https://doi.org/10.1063/1.1448858

Abstract

View articletitled, Effect of metal clusters on the swelling of gold–fluorocarbon–polymer composite films

Open the PDF for in another window

Neutron irradiation effects on visible-blind Au/GaN Schottky barrier detectors grown on Si(111)

Ching-Wu Wang

Appl. Phys. Lett. 80, 1568–1570 (2002) https://doi.org/10.1063/1.1458076

Abstract

View articletitled, Neutron irradiation effects on visible-blind Au/GaN Schottky barrier detectors grown on Si(111)

Open the PDF for in another window

Band anticrossing in group $II - O_{x} - {VI}_{1−x}$ highly mismatched alloys: ${Cd}_{1−x} {Mn}_{y} O_{x} {Te}_{1−x}$ quaternaries synthesized by O ion implantation

K. M. Yu; W. Walukiewicz; J. Wu; J. W. Beeman; J. W. Ager, III; E. E. Haller; I. Miotkowski; A. K. Ramdas; P. Becla

Appl. Phys. Lett. 80, 1571–1573 (2002) https://doi.org/10.1063/1.1455689

Abstract

View articletitled, Band anticrossing in group <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">II</mi><mi xmlns="">-</mi><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi>x</mi></mrow></msub><mi xmlns="">–</mi><msub xmlns=""><mi mathvariant="normal">VI</mi><mrow><mtext>1−x</mtext></mrow></msub></math> highly mismatched alloys: <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Cd</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Mn</mi><mrow><mi>y</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Te</mi><mrow><mtext>1−x</mtext></mrow></msub></math> quaternaries synthesized by O ion implantation

Open the PDF for in another window

Coexistence of metallic and insulating phases in epitaxial ${CaRuO}_{3}$ thin films observed by scanning microwave microscopy

S. Hyun; J. H. Cho; A. Kim; J. Kim; T. Kim; K. Char

Appl. Phys. Lett. 80, 1574–1576 (2002) https://doi.org/10.1063/1.1448391

Abstract

View articletitled, Coexistence of metallic and insulating phases in epitaxial <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CaRuO</mi><mrow><mn>3</mn></mrow></msub></math> thin films observed by scanning microwave microscopy

Open the PDF for in another window

ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Trap-limited migration of vacancy-type defects in 7.5 keV $H^{-}$ -implanted Si

Prakash N. K. Deenapanray

Appl. Phys. Lett. 80, 1577–1579 (2002) https://doi.org/10.1063/1.1456952

Abstract

View articletitled, Trap-limited migration of vacancy-type defects in 7.5 keV <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">H</mi><mrow><mi>−</mi></mrow></msup></math>-implanted Si

Open the PDF for in another window

Ultradense phosphorous delta layers grown into silicon from ${PH}_{3}$ molecular precursors

T.-C. Shen; J.-Y. Ji; M. A. Zudov; R.-R. Du; J. S. Kline; J. R. Tucker

Appl. Phys. Lett. 80, 1580–1582 (2002) https://doi.org/10.1063/1.1456949

Abstract

View articletitled, Ultradense phosphorous delta layers grown into silicon from <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">PH</mi><mrow><mn>3</mn></mrow></msub></math> molecular precursors

Open the PDF for in another window

Enhanced electron mobility and high order fractional quantum Hall states in AlAs quantum wells

E. P. De Poortere; Y. P. Shkolnikov; E. Tutuc; S. J. Papadakis; M. Shayegan; E. Palm; T. Murphy

Appl. Phys. Lett. 80, 1583–1585 (2002) https://doi.org/10.1063/1.1456265

Abstract

View articletitled, Enhanced electron mobility and high order fractional quantum Hall states in AlAs quantum wells

Open the PDF for in another window

High-purity and high-quality 4H–SiC grown at high speed by chimney-type vertical hot-wall chemical vapor deposition

K. Fujihira; T. Kimoto; H. Matsunami

Appl. Phys. Lett. 80, 1586–1588 (2002) https://doi.org/10.1063/1.1456968

Abstract

View articletitled, High-purity and high-quality 4H–SiC grown at high speed by chimney-type vertical hot-wall chemical vapor deposition

Open the PDF for in another window

Room-temperature intense 320 nm band ultraviolet emission from quaternary InAlGaN-based multiple-quantum wells

Hideki Hirayama; Yasushi Enomoto; Atsuhiro Kinoshita; Akira Hirata; Yoshinobu Aoyagi

Appl. Phys. Lett. 80, 1589–1591 (2002) https://doi.org/10.1063/1.1456951

Abstract

View articletitled, Room-temperature intense 320 nm band ultraviolet emission from quaternary InAlGaN-based multiple-quantum wells

Open the PDF for in another window

Ferromagnetic semiconductor (In,Ga,Mn)As with Curie temperature above 100 K

T. Slupinski; H. Munekata; A. Oiwa

Appl. Phys. Lett. 80, 1592–1594 (2002) https://doi.org/10.1063/1.1457526

Abstract

View articletitled, Ferromagnetic semiconductor (In,Ga,Mn)As with Curie temperature above 100 K

Open the PDF for in another window

Deep-level defect characteristics in pentacene organic thin films

Yong Suk Yang; Seong Hyun Kim; Jeong-Ik Lee; Hye Yong Chu; Lee-Mi Do; Hyoyoung Lee; Jiyoung Oh; Taehyoung Zyung; Min Ki Ryu; Min Su Jang

Appl. Phys. Lett. 80, 1595–1597 (2002) https://doi.org/10.1063/1.1459117

Abstract

View articletitled, Deep-level defect characteristics in pentacene organic thin films

Open the PDF for in another window

Anisotropic electrical spin injection in ferromagnetic semiconductor heterostructures

D. K. Young; E. Johnston-Halperin; D. D. Awschalom; Y. Ohno; H. Ohno

Appl. Phys. Lett. 80, 1598–1600 (2002) https://doi.org/10.1063/1.1458535

Abstract

View articletitled, Anisotropic electrical spin injection in ferromagnetic semiconductor heterostructures

Open the PDF for in another window

MAGNETISM AND SUPERCONDUCTIVITY

High-temperature superconducting thick films with enhanced supercurrent carrying capability

Q. X. Jia; S. R. Foltyn; P. N. Arendt; J. F. Smith

Appl. Phys. Lett. 80, 1601–1603 (2002) https://doi.org/10.1063/1.1455143

Abstract

View articletitled, High-temperature superconducting thick films with enhanced supercurrent carrying capability

Open the PDF for in another window

Three-dimensional arrays of BiSrCaCuO-2212 intrinsic Josephson junctions and zero-crossing Shapiro steps at 760 GHz

H. B. Wang; P. H. Wu; J. Chen; K. Maeda; T. Yamashita

Appl. Phys. Lett. 80, 1604–1606 (2002) https://doi.org/10.1063/1.1456555

Abstract

View articletitled, Three-dimensional arrays of BiSrCaCuO-2212 intrinsic Josephson junctions and zero-crossing Shapiro steps at 760 GHz

Open the PDF for in another window

Structural study of CoCrPt films by anomalous x-ray scattering and extended x-ray absorption fine structure

G. M. Chow; C. J. Sun; E. W. Soo; J. P. Wang; H. H. Lee; D. Y. Noh; T. S. Cho; J. H. Je; Y. K. Hwu

Appl. Phys. Lett. 80, 1607–1609 (2002) https://doi.org/10.1063/1.1457533

Abstract

View articletitled, Structural study of CoCrPt films by anomalous x-ray scattering and extended x-ray absorption fine structure

Open the PDF for in another window

Bulk nanocomposite permanent magnets produced by crystallization of (Fe,Co)–(Nd,Dy)–B bulk glassy alloy

Wei Zhang; Akihisa Inoue

Appl. Phys. Lett. 80, 1610–1612 (2002) https://doi.org/10.1063/1.1456259

Abstract

View articletitled, Bulk nanocomposite permanent magnets produced by crystallization of (Fe,Co)–(Nd,Dy)–B bulk glassy alloy

Open the PDF for in another window

Determining element-specific magnetocrystalline anisotropies using x-ray magnetic linear dichroism

S. S. Dhesi; G. van der Laan; E. Dudzik

Appl. Phys. Lett. 80, 1613–1615 (2002) https://doi.org/10.1063/1.1456542

Abstract

View articletitled, Determining element-specific magnetocrystalline anisotropies using x-ray magnetic linear dichroism

Open the PDF for in another window

Magnetic properties of ${CoFe}_{2} O_{4}$ nanoparticles synthesized through a block copolymer nanoreactor route

Sufi R. Ahmed; S. B. Ogale; Georgia C. Papaefthymiou; Ramamoorthy Ramesh; Peter Kofinas

Appl. Phys. Lett. 80, 1616–1618 (2002) https://doi.org/10.1063/1.1456258

Abstract

View articletitled, Magnetic properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CoFe</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>4</mn></mrow></msub></math> nanoparticles synthesized through a block copolymer nanoreactor route

Open the PDF for in another window

Co-occurrence of magnetic and structural transitions in the Heusler alloy ${Ni}_{53} {Mn}_{25} {Ga}_{22}$

Chengbao Jiang; Gen Feng; Huibin Xu

Appl. Phys. Lett. 80, 1619–1621 (2002) https://doi.org/10.1063/1.1457528

Abstract

View articletitled, Co-occurrence of magnetic and structural transitions in the Heusler alloy <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ni</mi><mrow><mn>53</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Mn</mi><mrow><mn>25</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mn>22</mn></mrow></msub></math>

Open the PDF for in another window

DIELECTRICS AND FERROELECTRICITY

Nanoscale imaging of domains and domain walls in periodically poled ferroelectrics using atomic force microscopy

J. Wittborn; C. Canalias; K. V. Rao; R. Clemens; H. Karlsson; F. Laurell

Appl. Phys. Lett. 80, 1622–1624 (2002) https://doi.org/10.1063/1.1455700

Abstract

View articletitled, Nanoscale imaging of domains and domain walls in periodically poled ferroelectrics using atomic force microscopy

Open the PDF for in another window

Fractal cluster modeling of the fatigue behavior of lead zirconate titanate

Shashank Priya; Hyeoung Woo Kim; Jungho Ryu; Kenji Uchino; Dwight Viehland

Appl. Phys. Lett. 80, 1625–1627 (2002) https://doi.org/10.1063/1.1455699

Abstract

View articletitled, Fractal cluster modeling of the fatigue behavior of lead zirconate titanate

Open the PDF for in another window

Observation of saturated polarization and dielectric anomaly in magnetoelectric ${BiFeO}_{3}$ thin films

V. R. Palkar; J. John; R. Pinto

Appl. Phys. Lett. 80, 1628–1630 (2002) https://doi.org/10.1063/1.1458695

Abstract

View articletitled, Observation of saturated polarization and dielectric anomaly in magnetoelectric <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">BiFeO</mi><mrow><mn>3</mn></mrow></msub></math> thin films

Open the PDF for in another window

Specific heat and thermal conductivity of ${BaTiO}_{3}$ polycrystalline thin films

S. T. Davitadze; S. N. Kravchun; B. A. Strukov; B. M. Goltzman; V. V. Lemanov; S. G. Shulman

Appl. Phys. Lett. 80, 1631–1633 (2002) https://doi.org/10.1063/1.1454212

Abstract

View articletitled, Specific heat and thermal conductivity of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">BaTiO</mi><mrow><mn>3</mn></mrow></msub></math> polycrystalline thin films

Open the PDF for in another window

NANOSCALE SCIENCE AND DESIGN

Hydrothermal synthesis of ${La}_{0.5} {Ba}_{0.5} {MnO}_{3}$ nanowires

Deliang Zhu; Hong Zhu; Yuheng Zhang

Appl. Phys. Lett. 80, 1634–1636 (2002) https://doi.org/10.1063/1.1455690

Abstract

View articletitled, Hydrothermal synthesis of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">La</mi><mrow><mtext>0.5</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ba</mi><mrow><mtext>0.5</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">MnO</mi><mrow><mn>3</mn></mrow></msub></math> nanowires

Open the PDF for in another window

Elucidation of the surface passivation role on the photoluminescence emission yield of silicon nanocrystals embedded in ${SiO}_{2}$

M. López; B. Garrido; C. Garcı́a; P. Pellegrino; A. Pérez-Rodrı́guez; J. R. Morante; C. Bonafos; M. Carrada; A. Claverie

Appl. Phys. Lett. 80, 1637–1639 (2002) https://doi.org/10.1063/1.1456970

Abstract

View articletitled, Elucidation of the surface passivation role on the photoluminescence emission yield of silicon nanocrystals embedded in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mn>2</mn></mrow></msub></math>

Open the PDF for in another window

Nanoparticle structure of ${MgB}_{2}$ with ultrathin ${TiB}_{2}$ grain boundaries

Y. Zhao; D. X. Huang; Y. Feng; C. H. Cheng; T. Machi; N. Koshizuka; M. Murakami

Appl. Phys. Lett. 80, 1640–1642 (2002) https://doi.org/10.1063/1.1456969

Abstract

View articletitled, Nanoparticle structure of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">MgB</mi><mrow><mn>2</mn></mrow></msub></math> with ultrathin <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">TiB</mi><mrow><mn>2</mn></mrow></msub></math> grain boundaries

Open the PDF for in another window

Optical control of gallium nanoparticle growth

K. F. MacDonald; V. A. Fedotov; S. Pochon; K. J. Ross; G. C. Stevens; N. I. Zheludev; W. S. Brocklesby; V. I. Emel’yanov

Appl. Phys. Lett. 80, 1643–1645 (2002) https://doi.org/10.1063/1.1456260

Abstract

View articletitled, Optical control of gallium nanoparticle growth

Open the PDF for in another window

Tip motion in amplitude modulation (tapping-mode) atomic-force microscopy: Comparison between continuous and point-mass models

Tomás R. Rodrı́guez; Ricardo Garcı́a

Appl. Phys. Lett. 80, 1646–1648 (2002) https://doi.org/10.1063/1.1456543

Abstract

View articletitled, Tip motion in amplitude modulation (tapping-mode) atomic-force microscopy: Comparison between continuous and point-mass models

Open the PDF for in another window

Room-temperature single-electron charging in electrochemically synthesized semiconductor quantum dot and wire array

N. Kouklin; L. Menon; S. Bandyopadhyay

Appl. Phys. Lett. 80, 1649–1651 (2002) https://doi.org/10.1063/1.1458683

Abstract

View articletitled, Room-temperature single-electron charging in electrochemically synthesized semiconductor quantum dot and wire array

Open the PDF for in another window

Optical near-field enhancement at a metal tip probed by a single fluorophore

A. Kramer; W. Trabesinger; B. Hecht; U. P. Wild

Appl. Phys. Lett. 80, 1652–1654 (2002) https://doi.org/10.1063/1.1453479

Abstract

View articletitled, Optical near-field enhancement at a metal tip probed by a single fluorophore

Open the PDF for in another window

DEVICE PHYSICS

Band-gap profiling in amorphous silicon–germanium solar cells

Dietmar Lundszien; Friedhelm Finger; Heribert Wagner

Appl. Phys. Lett. 80, 1655–1657 (2002) https://doi.org/10.1063/1.1456548

Abstract

View articletitled, Band-gap profiling in amorphous silicon–germanium solar cells

Open the PDF for in another window

Hole transport in polycrystalline pentacene transistors

R. A. Street; D. Knipp; A. R. Völkel

Appl. Phys. Lett. 80, 1658–1660 (2002) https://doi.org/10.1063/1.1456549

Abstract

View articletitled, Hole transport in polycrystalline pentacene transistors

Open the PDF for in another window

Influence of MgO and ${Sc}_{2} O_{3}$ passivation on AlGaN/GaN high-electron-mobility transistors

B. Luo; J. W. Johnson; J. Kim; R. M. Mehandru; F. Ren; B. P. Gila; A. H. Onstine; C. R. Abernathy; S. J. Pearton; A. G. Baca; R. D. Briggs; R. J. Shul; C. Monier; J. Han

Appl. Phys. Lett. 80, 1661–1663 (2002) https://doi.org/10.1063/1.1455692

Abstract

View articletitled, Influence of MgO and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Sc</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>3</mn></mrow></msub></math> passivation on AlGaN/GaN high-electron-mobility transistors

Open the PDF for in another window

Charge collection and absorption-limited sensitivity of x-ray photoconductors: Applications to $a- Se$ and ${HgI}_{2}$

M. Zahangir Kabir; S. O. Kasap

Appl. Phys. Lett. 80, 1664–1666 (2002) https://doi.org/10.1063/1.1454213

Abstract

View articletitled, Charge collection and absorption-limited sensitivity of x-ray photoconductors: Applications to <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">a-</mi><mi mathvariant="normal" xmlns="">Se</mi></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">HgI</mi><mrow><mn>2</mn></mrow></msub></math>

Open the PDF for in another window

High photovoltage multiple-heterojunction organic solar cells incorporating interfacial metallic nanoclusters

A. Yakimov; S. R. Forrest

Appl. Phys. Lett. 80, 1667–1669 (2002) https://doi.org/10.1063/1.1457531

Abstract

View articletitled, High photovoltage multiple-heterojunction organic solar cells incorporating interfacial metallic nanoclusters

Open the PDF for in another window

APPLIED BIOPHYSICS

Control of electrical conduction in DNA using oxygen hole doping

Hea-Yeon Lee; Hidekazu Tanaka; Yoichi Otsuka; Kyung-Hwa Yoo; Jeong-O Lee; Tomoji Kawai

Appl. Phys. Lett. 80, 1670–1672 (2002) https://doi.org/10.1063/1.1456972

Abstract

View articletitled, Control of electrical conduction in DNA using oxygen hole doping

Open the PDF for in another window

COMMENTS

Comment on “Spin filtering in a magnetic–electric barrier structure” [Appl. Phys. Lett. 78, 2184 (2001)]

Y. Jiang; M. B. A. Jalil; T. S. Low

Appl. Phys. Lett. 80, 1673–1674 (2002) https://doi.org/10.1063/1.1456239

View articletitled, Comment on “Spin filtering in a magnetic–electric barrier structure” [Appl. Phys. Lett. 78, 2184 (2001)]

Open the PDF for in another window

Issues

LASERS, OPTICS, AND OPTOELECTRONICS

PLASMAS AND ELECTRICAL DISCHARGES

STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

ELECTRONIC TRANSPORT AND SEMICONDUCTORS

MAGNETISM AND SUPERCONDUCTIVITY

DIELECTRICS AND FERROELECTRICITY

NANOSCALE SCIENCE AND DESIGN

DEVICE PHYSICS

APPLIED BIOPHYSICS

COMMENTS

RSS

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

This Feature Is Available To Subscribers Only