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Issues
18 February 2002
ISSN 0003-6951
EISSN 1077-3118
In this Issue
LASERS, OPTICS, AND OPTOELECTRONICS
Fast analog electro-optic effect in an achiral smectic C liquid crystal in a transverse electrode configuration
Appl. Phys. Lett. 80, 1111–1113 (2002)
https://doi.org/10.1063/1.1450056
Two-photon absorption properties of commercial fused silica and germanosilicate glass at 264 nm
Appl. Phys. Lett. 80, 1114–1116 (2002)
https://doi.org/10.1063/1.1448387
Solvent-assisted dye-diffusion thermal transfer for electronic imaging applications
Appl. Phys. Lett. 80, 1117–1119 (2002)
https://doi.org/10.1063/1.1447001
Enhancing the surface passivation of coated silicon wafers
Appl. Phys. Lett. 80, 1123–1125 (2002)
https://doi.org/10.1063/1.1445810
High-gain coupled InGaAs quantum well InAs quantum dot AlGaAs–GaAs–InGaAs–InAs heterostructure diode laser operation
Appl. Phys. Lett. 80, 1126–1128 (2002)
https://doi.org/10.1063/1.1451989
Above-room-temperature optically pumped 4.12 μm midinfrared vertical-cavity surface-emitting lasers
Appl. Phys. Lett. 80, 1129–1131 (2002)
https://doi.org/10.1063/1.1449540
PLASMAS AND ELECTRICAL DISCHARGES
T-junction tuning system for large-area surface-wave plasma sources
Appl. Phys. Lett. 80, 1132–1134 (2002)
https://doi.org/10.1063/1.1448399
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
Effect of composition inhomogeneity on the photoluminescence of InGaN/GaN multiple quantum wells upon thermal annealing
Appl. Phys. Lett. 80, 1138–1140 (2002)
https://doi.org/10.1063/1.1450262
Role of hydrogen for the elastic properties of alumina thin films
Appl. Phys. Lett. 80, 1144–1146 (2002)
https://doi.org/10.1063/1.1448389
Formation and decay mechanisms of electron–hole pairs in amorphous
Appl. Phys. Lett. 80, 1147–1149 (2002)
https://doi.org/10.1063/1.1448173
Investigation of nanoscale structure in digital layers of Mn/GaAs and MnGa/GaAs
Appl. Phys. Lett. 80, 1150–1152 (2002)
https://doi.org/10.1063/1.1448658
Preparation of polycrystalline boron carbide thin films at room temperature by pulsed ion-beam evaporation
Appl. Phys. Lett. 80, 1153–1155 (2002)
https://doi.org/10.1063/1.1449539
Photorefractive polymer composites fabricated by injection molding
J. A. Herlocker; C. Fuentes-Hernandez; J. F. Wang; N. Peyghambarian; B. Kippelen; Q. Zhang; S. R. Marder
Appl. Phys. Lett. 80, 1156–1158 (2002)
https://doi.org/10.1063/1.1451990
Fine crystalline grain model for the determination of the morphology of ultrathin amorphous silicon films
Appl. Phys. Lett. 80, 1159–1161 (2002)
https://doi.org/10.1063/1.1450046
Photoluminescence behavior of poly(quinoline)s in silica glasses via the sol–gel process
Appl. Phys. Lett. 80, 1162–1164 (2002)
https://doi.org/10.1063/1.1450040
Study of intermixing in a GaAs/AlGaAs quantum-well structure using doped spin-on silica layers
Appl. Phys. Lett. 80, 1171–1173 (2002)
https://doi.org/10.1063/1.1449522
Role of atomic arrangements at interfaces on the phase control of epitaxial films
Appl. Phys. Lett. 80, 1174–1176 (2002)
https://doi.org/10.1063/1.1450249
Spinodal decomposition in and alloys
Appl. Phys. Lett. 80, 1177–1179 (2002)
https://doi.org/10.1063/1.1450261
Measurement of debonding in cracked nanocomposite films by ultrasonic force microscopy
Appl. Phys. Lett. 80, 1180–1182 (2002)
https://doi.org/10.1063/1.1450058
Anti-Stokes emission in undoped
Appl. Phys. Lett. 80, 1183–1185 (2002)
https://doi.org/10.1063/1.1451991
Thermodynamic stability and diffusivity of near-equiatomic Ni–Mn alloys
Appl. Phys. Lett. 80, 1186–1188 (2002)
https://doi.org/10.1063/1.1450042
ELECTRONIC TRANSPORT AND SEMICONDUCTORS
Normal-incidence Ge quantum-dot photodetectors at 1.5 μm based on Si substrate
Appl. Phys. Lett. 80, 1189–1191 (2002)
https://doi.org/10.1063/1.1449525
Control of p- and n-type conductivity in sputter deposition of undoped ZnO
Appl. Phys. Lett. 80, 1195–1197 (2002)
https://doi.org/10.1063/1.1449528
Observation of the Mott–Gurney law in tris (8-hydroxyquinoline) aluminum films
Appl. Phys. Lett. 80, 1198–1200 (2002)
https://doi.org/10.1063/1.1449527
A nanofabrication scheme for InAs/AlSb heterostructures
Appl. Phys. Lett. 80, 1201–1203 (2002)
https://doi.org/10.1063/1.1449526
Evidence for nonlinear macroscopic polarization in III–V nitride alloy heterostructures
Appl. Phys. Lett. 80, 1204–1206 (2002)
https://doi.org/10.1063/1.1448668
A p-type semiconducting oxide with a valence band composed of a low spin state of in a configuration
Appl. Phys. Lett. 80, 1207–1209 (2002)
https://doi.org/10.1063/1.1450252
Optical and electrical properties of Mg-doped p-type
Appl. Phys. Lett. 80, 1210–1212 (2002)
https://doi.org/10.1063/1.1450038
Photocurrent studies of an active polymer layer in a resonant microcavity
Appl. Phys. Lett. 80, 1213–1215 (2002)
https://doi.org/10.1063/1.1448171
PbTe based superlattice structures with high thermoelectric efficiency
Appl. Phys. Lett. 80, 1216–1218 (2002)
https://doi.org/10.1063/1.1448388
Logarithmically perturbed two dimensional oscillator model of a quantum-dot nanostructure
Appl. Phys. Lett. 80, 1219–1221 (2002)
https://doi.org/10.1063/1.1448663
Hydrogen response mechanism of Pt–GaN Schottky diodes
Appl. Phys. Lett. 80, 1222–1224 (2002)
https://doi.org/10.1063/1.1450044
Common-emitter current–voltage characteristics of a pnp GaN bipolar junction transistor
Appl. Phys. Lett. 80, 1225–1227 (2002)
https://doi.org/10.1063/1.1447593
Acoustic phonon scattering of two-dimensional electrons in GaN/AlGaN heterostructures
W. Knap; E. Borovitskaya; M. S. Shur; L. Hsu; W. Walukiewicz; E. Frayssinet; P. Lorenzini; N. Grandjean; C. Skierbiszewski; P. Prystawko; M. Leszczynski; I. Grzegory
Appl. Phys. Lett. 80, 1228–1230 (2002)
https://doi.org/10.1063/1.1448401
Negative differential resistance in scanning-tunneling spectroscopy of diamond films
Appl. Phys. Lett. 80, 1231–1233 (2002)
https://doi.org/10.1063/1.1448168
MAGNETISM AND SUPERCONDUCTIVITY
Role of boron on grain sizes and magnetic correlation lengths in recording media as determined by soft x-ray scattering
Appl. Phys. Lett. 80, 1234–1236 (2002)
https://doi.org/10.1063/1.1448665
Magnetic CdSe-based quantum dots grown on Mn-passivated ZnSe
Appl. Phys. Lett. 80, 1237–1239 (2002)
https://doi.org/10.1063/1.1450254
Efficient electrical spin injection from a magnetic metal/tunnel barrier contact into a semiconductor
Appl. Phys. Lett. 80, 1240–1242 (2002)
https://doi.org/10.1063/1.1449530
Fast development of high coercivity in melt-spun magnets
Appl. Phys. Lett. 80, 1243–1245 (2002)
https://doi.org/10.1063/1.1450253
Approach to saturation in nanomagnetic systems: Easy axis distribution and interactions
Appl. Phys. Lett. 80, 1246–1248 (2002)
https://doi.org/10.1063/1.1447600
DIELECTRICS AND FERROELECTRICITY
-annealed atomic-layer-deposited silicon nitride as a high-k gate dielectric with high reliability
Appl. Phys. Lett. 80, 1252–1254 (2002)
https://doi.org/10.1063/1.1447314
Barium–strontium–titanate thin films for application in radio-frequency-microelectromechanical capacitive switches
Appl. Phys. Lett. 80, 1255–1257 (2002)
https://doi.org/10.1063/1.1450263
Thickness-dependent phase evolution of polycrystalline thin films
Maxim B. Kelman; Lawrence F. Schloss; Paul C. McIntyre; Bryan C. Hendrix; Steven M. Bilodeau; Jeffrey F. Roeder
Appl. Phys. Lett. 80, 1258–1260 (2002)
https://doi.org/10.1063/1.1449532
Hole trapping in ultrathin and insulators on silicon
Appl. Phys. Lett. 80, 1261–1263 (2002)
https://doi.org/10.1063/1.1447006
NANOSCALE SCIENCE AND DESIGN
Single-electron tunneling at room temperature in cobalt nanoparticles
Appl. Phys. Lett. 80, 1264–1266 (2002)
https://doi.org/10.1063/1.1450251
Structural characterization of cup-stacked-type nanofibers with an entirely hollow core
M. Endo; Y. A. Kim; T. Hayashi; Y. Fukai; K. Oshida; M. Terrones; T. Yanagisawa; S. Higaki; M. S. Dresselhaus
Appl. Phys. Lett. 80, 1267–1269 (2002)
https://doi.org/10.1063/1.1450264
Efficient quantum well to quantum dot tunneling: Analytical solutions
Appl. Phys. Lett. 80, 1270–1272 (2002)
https://doi.org/10.1063/1.1449535
Self-organized lateral ordering for vertically aligned PbSe/PbEuTe quantum-dot superlattices
Appl. Phys. Lett. 80, 1273–1275 (2002)
https://doi.org/10.1063/1.1447319
Spring constant and damping constant tuning of nanomechanical resonators using a single-electron transistor
Appl. Phys. Lett. 80, 1276–1278 (2002)
https://doi.org/10.1063/1.1449533
Photoluminescence of ultrasmall Ge quantum dots grown by molecular-beam epitaxy at low temperatures
Appl. Phys. Lett. 80, 1279–1281 (2002)
https://doi.org/10.1063/1.1430508
DEVICE PHYSICS
Excimer-laser-irradiation-induced effects in films for photovoltaic applications
Appl. Phys. Lett. 80, 1285–1287 (2002)
https://doi.org/10.1063/1.1450047
Effect of LiF/metal electrodes on the performance of plastic solar cells
Appl. Phys. Lett. 80, 1288–1290 (2002)
https://doi.org/10.1063/1.1446988
Nonvolatile field programmable spin-logic for reconfigurable computing
Appl. Phys. Lett. 80, 1291–1293 (2002)
https://doi.org/10.1063/1.1449536
Excess current investigations of silicon diodes
Appl. Phys. Lett. 80, 1294–1296 (2002)
https://doi.org/10.1063/1.1450048
INTERDISCIPLINARY AND GENERAL PHYSICS
Thermoelastic loss in microscale oscillators
Appl. Phys. Lett. 80, 1300–1302 (2002)
https://doi.org/10.1063/1.1449534
COMMENTS
ERRATA
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Superconducting flip-chip devices using indium microspheres on Au-passivated Nb or NbN as under-bump metallization layer
Achintya Paradkar, Paul Nicaise, et al.
Sputter epitaxy of ScAlN films on GaN high electron mobility transistor structures
Tomoya Okuda, Shunsuke Ota, et al.