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LASERS, OPTICS, AND OPTOELECTRONICS

InAs/GaAs quantum dot lasers with InGaP cladding layer grown by solid-source molecular-beam epitaxy

Nien-Tze Yeh; Wei-Sheng Liu; Shu-Han Chen; Pe-Chin Chiu; Jen-Inn Chyi

Appl. Phys. Lett. 80, 535–537 (2002) https://doi.org/10.1063/1.1445269

Abstract

View articletitled, InAs/GaAs quantum dot lasers with InGaP cladding layer grown by solid-source molecular-beam epitaxy

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Towards a voltage tunable two-color quantum-well infrared photodetector

Amlan Majumdar; K. K. Choi; L. P. Rokhinson; D. C. Tsui

Appl. Phys. Lett. 80, 538–540 (2002) https://doi.org/10.1063/1.1436529

Abstract

View articletitled, Towards a voltage tunable two-color quantum-well infrared photodetector

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Coherent x-ray pulse generation in the sub-Ångström regime

C. H. Keitel; S. X. Hu

Appl. Phys. Lett. 80, 541–543 (2002) https://doi.org/10.1063/1.1436277

Abstract

View articletitled, Coherent x-ray pulse generation in the sub-Ångström regime

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Emission gain narrowing from single crystals of a thiophene/phenylene co-oligomer

Michifumi Nagawa; Ryota Hibino; Shu Hotta; Hisao Yanagi; Musubu Ichikawa; Toshiki Koyama; Yoshio Taniguchi

Appl. Phys. Lett. 80, 544–546 (2002) https://doi.org/10.1063/1.1435797

Abstract

View articletitled, Emission gain narrowing from single crystals of a thiophene/phenylene co-oligomer

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Photonic-crystal ultrashort bends with improved transmission and low reflection at 1.55 μm

A. Talneau; L. Le Gouezigou; N. Bouadma; M. Kafesaki; C. M. Soukoulis; M. Agio

Appl. Phys. Lett. 80, 547–549 (2002) https://doi.org/10.1063/1.1445270

Abstract

View articletitled, Photonic-crystal ultrashort bends with improved transmission and low reflection at 1.55 μm

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Low Stokes shift in thick and homogeneous InGaN epilayers

S. Srinivasan; F. Bertram; A. Bell; F. A. Ponce; S. Tanaka; H. Omiya; Y. Nakagawa

Appl. Phys. Lett. 80, 550–552 (2002) https://doi.org/10.1063/1.1436531

Abstract

View articletitled, Low Stokes shift in thick and homogeneous InGaN epilayers

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Ultraviolet photoresponse of porous ZnO thin films prepared by unbalanced magnetron sputtering

Parmanand Sharma; Abhai Mansingh; K. Sreenivas

Appl. Phys. Lett. 80, 553–555 (2002) https://doi.org/10.1063/1.1445480

Abstract

View articletitled, Ultraviolet photoresponse of porous ZnO thin films prepared by unbalanced magnetron sputtering

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Investigation of direct and indirect band gaps of [100]-oriented nearly strain-free $β- {FeSi}_{2}$ films grown by molecular-beam epitaxy

Ken-ichiro Takakura; Noriyoshi Hiroi; Takashi Suemasu; Shigefusa F. Chichibu; Fumio Hasegawa

Appl. Phys. Lett. 80, 556–558 (2002) https://doi.org/10.1063/1.1432755

Abstract

View articletitled, Investigation of direct and indirect band gaps of [100]-oriented nearly strain-free <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">β-</mi><msub xmlns=""><mi mathvariant="normal">FeSi</mi><mrow><mn>2</mn></mrow></msub></math> films grown by molecular-beam epitaxy

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Thermal decomposition of ${ZrO}_{2} / {SiO}_{2}$ bilayer on Si(001) caused by void nucleation and its lateral growth

Heiji Watanabe; Nobuyuki Ikarashi

Appl. Phys. Lett. 80, 559–561 (2002) https://doi.org/10.1063/1.1435810

Abstract

View articletitled, Thermal decomposition of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">ZrO</mi><mrow><mn>2</mn></mrow></msub><mi xmlns="">/</mi><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mn>2</mn></mrow></msub></math> bilayer on Si(001) caused by void nucleation and its lateral growth

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Polymorphism in ${CuInS}_{2}$ epilayers: Origin of additional Raman modes

J. A̧lvarez-Garcı́a; A. Pérez-Rodrı́guez; B. Barcones; A. Romano-Rodrı́guez; J. R. Morante; A. Janotti; Su-Huai Wei; R. Scheer

Appl. Phys. Lett. 80, 562–564 (2002) https://doi.org/10.1063/1.1435800

Abstract

View articletitled, Polymorphism in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CuInS</mi><mrow><mn>2</mn></mrow></msub></math> epilayers: Origin of additional Raman modes

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Temperature-gradient epitaxy under in situ growth mode diagnostics by scanning reflection high-energy electron diffraction

T. Koida; D. Komiyama; H. Koinuma; M. Ohtani; M. Lippmaa; M. Kawasaki

Appl. Phys. Lett. 80, 565–567 (2002) https://doi.org/10.1063/1.1445483

Abstract

View articletitled, Temperature-gradient epitaxy under in situ growth mode diagnostics by scanning reflection high-energy electron diffraction

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Glass-forming ability of ${Pd}_{42.5} {Cu}_{30} {Ni}_{7.5} P_{20}$ alloy with a low critical cooling rate of 0.067 K/s

N. Nishiyama; A. Inoue

Appl. Phys. Lett. 80, 568–570 (2002) https://doi.org/10.1063/1.1445475

Abstract

View articletitled, Glass-forming ability of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Pd</mi><mrow><mtext>42.5</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Cu</mi><mrow><mn>30</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ni</mi><mrow><mtext>7.5</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">P</mi><mrow><mn>20</mn></mrow></msub></math> alloy with a low critical cooling rate of 0.067 K/s

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Pressure sensor based on freely suspended ferroelectric liquid crystal film

S. V. Yablonskii; K. Nakano; A. S. Mikhailov; M. Ozaki; K. Yoshino

Appl. Phys. Lett. 80, 571–573 (2002) https://doi.org/10.1063/1.1430270

Abstract

View articletitled, Pressure sensor based on freely suspended ferroelectric liquid crystal film

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Orientation-controlled epitaxy and anisotropic properties of ${La}_{2−x} {Sr}_{x} {NiO}_{4}$ with $0.5⩽x⩽1.5$ covering the insulator–metal transition

S. Shinomori; M. Kawasaki; Y. Tokura

Appl. Phys. Lett. 80, 574–576 (2002) https://doi.org/10.1063/1.1436523

Abstract

View articletitled, Orientation-controlled epitaxy and anisotropic properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">La</mi><mrow><mtext>2−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Sr</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">NiO</mi><mrow><mn>4</mn></mrow></msub></math> with <math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">0.5⩽x⩽1.5</mtext></math> covering the insulator–metal transition

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Hydrogen desorption properties of multiwall carbon nanotubes with closed and open structures

Ho Lee; Youn-Seon Kang; Seoung-Hoe Kim; Jai-Young Lee

Appl. Phys. Lett. 80, 577–579 (2002) https://doi.org/10.1063/1.1446208

Abstract

View articletitled, Hydrogen desorption properties of multiwall carbon nanotubes with closed and open structures

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Current-crowding-induced electromigration failure in flip chip solder joints

Everett C. C. Yeh; W. J. Choi; K. N. Tu; Peter Elenius; Haluk Balkan

Appl. Phys. Lett. 80, 580–582 (2002) https://doi.org/10.1063/1.1432443

Abstract

View articletitled, Current-crowding-induced electromigration failure in flip chip solder joints

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Metal–insulator transition of ${VO}_{2}$ thin films grown on ${TiO}_{2}$ (001) and (110) substrates

Y. Muraoka; Z. Hiroi

Appl. Phys. Lett. 80, 583–585 (2002) https://doi.org/10.1063/1.1446215

Abstract

View articletitled, Metal–insulator transition of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">VO</mi><mrow><mn>2</mn></mrow></msub></math> thin films grown on <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">TiO</mi><mrow><mn>2</mn></mrow></msub></math> (001) and (110) substrates

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Computational designing of graphitic silicon carbide and its tubular forms

Yoshiyuki Miyamoto; Byung Deok Yu

Appl. Phys. Lett. 80, 586–588 (2002) https://doi.org/10.1063/1.1445474

Abstract

View articletitled, Computational designing of graphitic silicon carbide and its tubular forms

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Microstructure-size dependence of the 1.520 μm ${Er}^{3+}$ luminescence lifetime in ${Al}_{2} O_{3} - {ZrO}_{2}$ eutectic melt growth composites

R. I. Merino; J. A. Pardo; J. I. Peña; V. M. Orera

Appl. Phys. Lett. 80, 589–591 (2002) https://doi.org/10.1063/1.1445469

Abstract

View articletitled, Microstructure-size dependence of the 1.520 μm <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">Er</mi><mrow><mtext>3+</mtext></mrow></msup></math> luminescence lifetime in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>3</mn></mrow></msub><mi xmlns="">–</mi><msub xmlns=""><mi mathvariant="normal">ZrO</mi><mrow><mn>2</mn></mrow></msub></math> eutectic melt growth composites

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Sputtering of Si with decaborane cluster ions

Marek Sosnowski; Maria A. Albano; Cheng Li; Hans-Joachim L. Gossmann; Dale C. Jacobson

Appl. Phys. Lett. 80, 592–594 (2002) https://doi.org/10.1063/1.1446211

Abstract

View articletitled, Sputtering of Si with decaborane cluster ions

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Thermal stability study of Ni/Ta n-GaN Schottky contacts

G. L. Chen; F. C. Chang; K. C. Shen; J. Ou; W. H. Chen; M. C. Lee; W. K. Chen; M. J. Jou; C. N. Huang

Appl. Phys. Lett. 80, 595–597 (2002) https://doi.org/10.1063/1.1425455

Abstract

View articletitled, Thermal stability study of Ni/Ta n-GaN Schottky contacts

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High figure of merit in Eu-filled CoSb₃-based skutterudites

G. A. Lamberton, Jr.; S. Bhattacharya; R. T. Littleton, IV; M. A. Kaeser; R. H. Tedstrom; T. M. Tritt; J. Yang; G. S. Nolas

Appl. Phys. Lett. 80, 598–600 (2002) https://doi.org/10.1063/1.1433911

Abstract

View articletitled, High figure of merit in Eu-filled CoSb3-based skutterudites

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Relaxed SiGe-on-insulator substrates without thick SiGe buffer layers

Tomohisa Mizuno; Naoharu Sugiyama; Tsutomu Tezuka; Shin-ichi Takagi

Appl. Phys. Lett. 80, 601–603 (2002) https://doi.org/10.1063/1.1435799

Abstract

View articletitled, Relaxed SiGe-on-insulator substrates without thick SiGe buffer layers

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Influence of ${}^{60}{Co}$ γ-rays on dc performance of AlGaN/GaN high electron mobility transistors

B. Luo; J. W. Johnson; F. Ren; K. K. Allums; C. R. Abernathy; S. J. Pearton; A. M. Dabiran; A. M. Wowchack; C. J. Polley; P. P. Chow; D. Schoenfeld; A. G. Baca

Appl. Phys. Lett. 80, 604–606 (2002) https://doi.org/10.1063/1.1445809

Abstract

View articletitled, Influence of <math xmlns="http://www.w3.org/1998/Math/MathML"><mmultiscripts xmlns=""><mi mathvariant="normal">Co</mi><mtext></mtext><mtext></mtext><mprescripts></mprescripts><mtext></mtext><mi mathvariant="normal">60</mi></mmultiscripts></math> γ-rays on dc performance of AlGaN/GaN high electron mobility transistors

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Transient model for terminal current noise

M. Nedjalkov; T. Grasser; H. Kosina; S. Selberherr

Appl. Phys. Lett. 80, 607–609 (2002) https://doi.org/10.1063/1.1447002

Abstract

View articletitled, Transient model for terminal current noise

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Amorphous silicon thin-film transistors and arrays fabricated by jet printing

W. S. Wong; S. Ready; R. Matusiak; S. D. White; J.-P. Lu; J. Ho; R. A. Street

Appl. Phys. Lett. 80, 610–612 (2002) https://doi.org/10.1063/1.1436273

Abstract

View articletitled, Amorphous silicon thin-film transistors and arrays fabricated by jet printing

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Accurate impact ionization model which accounts for hot and cold carrier populations

T. Grasser; H. Kosina; C. Heitzinger; S. Selberherr

Appl. Phys. Lett. 80, 613–615 (2002) https://doi.org/10.1063/1.1445273

Abstract

View articletitled, Accurate impact ionization model which accounts for hot and cold carrier populations

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MAGNETISM AND SUPERCONDUCTIVITY

Advanced laminated antiferromagnetically coupled recording media with high thermal stability

S. I. Pang; S. N. Piramanayagam; J. P. Wang

Appl. Phys. Lett. 80, 616–618 (2002) https://doi.org/10.1063/1.1436281

Abstract

View articletitled, Advanced laminated antiferromagnetically coupled recording media with high thermal stability

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Irreversibility field and superconducting screening currents in ${EuBa}_{2} {Cu}_{3} O_{7}$ films

K. Senapati; Leena K. Sahoo; N. K. Pandey; R. C. Budhani

Appl. Phys. Lett. 80, 619–621 (2002) https://doi.org/10.1063/1.1436525

Abstract

View articletitled, Irreversibility field and superconducting screening currents in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">EuBa</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Cu</mi><mrow><mn>3</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>7</mn></mrow></msub></math> films

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Epitaxial growth and valence control of strained perovskite ${SrFeO}_{3}$ films

Hiroyuki Yamada; M. Kawasaki; Y. Tokura

Appl. Phys. Lett. 80, 622–624 (2002) https://doi.org/10.1063/1.1445805

Abstract

View articletitled, Epitaxial growth and valence control of strained perovskite <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SrFeO</mi><mrow><mn>3</mn></mrow></msub></math> films

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Large magnetoresistance using hybrid spin filter devices

P. LeClair; J. K. Ha; H. J. M. Swagten; J. T. Kohlhepp; C. H. van de Vin; W. J. M. de Jonge

Appl. Phys. Lett. 80, 625–627 (2002) https://doi.org/10.1063/1.1436284

Abstract

View articletitled, Large magnetoresistance using hybrid spin filter devices

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Enhanced low-field magnetoresistance in ${La}_{2/3} {Ca}_{1/3} {MnO}_{3} / \Pr_{2/3} {Ca}_{1/3} {MnO}_{3}$ superlattices

H. Li; J. R. Sun; H. K. Wong

Appl. Phys. Lett. 80, 628–630 (2002) https://doi.org/10.1063/1.1445802

Abstract

View articletitled, Enhanced low-field magnetoresistance in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">La</mi><mrow><mtext>2/3</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ca</mi><mrow><mtext>1/3</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">MnO</mi><mrow><mn>3</mn></mrow></msub><mi xmlns="">/</mi><msub xmlns=""><mi mathvariant="normal">Pr</mi><mrow><mtext>2/3</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ca</mi><mrow><mtext>1/3</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">MnO</mi><mrow><mn>3</mn></mrow></msub></math> superlattices

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Magnetic coupling and magnetoresistance in $Fe / {Si}_{1−x} {Ag}_{x}$ multilayers

Hai Wang; Yunjun Tang; Xiang Li; Xi Chen; Yinjun Wang; Tao Zhu; Hongwu Zhao; Wenshan Zhan

Appl. Phys. Lett. 80, 631–633 (2002) https://doi.org/10.1063/1.1445466

Abstract

View articletitled, Magnetic coupling and magnetoresistance in <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">Fe</mi><mi xmlns="">/</mi><msub xmlns=""><mi mathvariant="normal">Si</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ag</mi><mrow><mi>x</mi></mrow></msub></math> multilayers

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Magnetic properties and shape memory of Fe-doped ${Ni}_{52} {Mn}_{24} {Ga}_{24}$ single crystals

G. H. Wu; W. H. Wang; J. L. Chen; L. Ao; Z. H. Liu; W. S. Zhan; T. Liang; H. B. Xu

Appl. Phys. Lett. 80, 634–636 (2002) https://doi.org/10.1063/1.1447003

Abstract

View articletitled, Magnetic properties and shape memory of Fe-doped <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ni</mi><mrow><mn>52</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Mn</mi><mrow><mn>24</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mn>24</mn></mrow></msub></math> single crystals

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DIELECTRICS AND FERROELECTRICITY

Ferroelectric properties of laser-ablated ${Sr}_{1−x} A_{x} {Bi}_{2} {Ta}_{2} O_{9}$ thin films (where $A = Ba,$ Ca)

Rasmi R. Das; P. Bhattacharya; W. Pérez; Ram S. Katiyar; Seshu B. Desu

Appl. Phys. Lett. 80, 637–639 (2002) https://doi.org/10.1063/1.1436528

Abstract

View articletitled, Ferroelectric properties of laser-ablated <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Sr</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">A</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Bi</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ta</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>9</mn></mrow></msub></math> thin films (where <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">A</mi><mi xmlns="">=</mi><mi mathvariant="normal" xmlns="">Ba</mi><mi xmlns="">,</mi></math> Ca)

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Dielectric properties of 1 MeV electron-irradiated polyimide

P. S. Alegaonkar; V. N. Bhoraskar; P. Balaya; P. S. Goyal

Appl. Phys. Lett. 80, 640–642 (2002) https://doi.org/10.1063/1.1435408

Abstract

View articletitled, Dielectric properties of 1 MeV electron-irradiated polyimide

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Dielectric and conduction behavior of La-doped ${SrTiO}_{3}$ with suppressed quantum-paraelectric background

Zhi Yu; Chen Ang

Appl. Phys. Lett. 80, 643–645 (2002) https://doi.org/10.1063/1.1435409

Abstract

View articletitled, Dielectric and conduction behavior of La-doped <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SrTiO</mi><mrow><mn>3</mn></mrow></msub></math> with suppressed quantum-paraelectric background

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Correlation radius of polarization fluctuations in the disordered ferroelectrics

M. D. Glinchuk; E. A. Eliseev; V. A. Stephanovich; E. V. Kirichenko; L. Jastrabik

Appl. Phys. Lett. 80, 646–648 (2002) https://doi.org/10.1063/1.1430266

Abstract

View articletitled, Correlation radius of polarization fluctuations in the disordered ferroelectrics

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Dielectric constant of boron carbon nitride films synthesized by plasma-assisted chemical-vapor deposition

Takashi Sugino; Yoshihiro Etou; Tomoyoshi Tai; Hirotaro Mori

Appl. Phys. Lett. 80, 649–651 (2002) https://doi.org/10.1063/1.1436522

Abstract

View articletitled, Dielectric constant of boron carbon nitride films synthesized by plasma-assisted chemical-vapor deposition

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Crystal orientation dependence of the piezoelectric $d_{33}$ coefficient in tetragonal ${BaTiO}_{3}$ as a function of temperature

Dragan Damjanovic; Franziska Brem; Nava Setter

Appl. Phys. Lett. 80, 652–654 (2002) https://doi.org/10.1063/1.1445481

Abstract

View articletitled, Crystal orientation dependence of the piezoelectric <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi>d</mi><mrow><mn>33</mn></mrow></msub></math> coefficient in tetragonal <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">BaTiO</mi><mrow><mn>3</mn></mrow></msub></math> as a function of temperature

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Electrical conduction mechanism in high-dielectric-constant $({Ba}_{0.5}, {Sr}_{0.5}) {TiO}_{3}$ thin films

Shao-Te Chang; Joseph Ya-min Lee

Appl. Phys. Lett. 80, 655–657 (2002) https://doi.org/10.1063/1.1436527

Abstract

View articletitled, Electrical conduction mechanism in high-dielectric-constant <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">(</mi><msub xmlns=""><mi mathvariant="normal">Ba</mi><mrow><mtext>0.5</mtext></mrow></msub><mi xmlns="">,</mi><msub xmlns=""><mi mathvariant="normal">Sr</mi><mrow><mtext>0.5</mtext></mrow></msub><mi xmlns="">)</mi><msub xmlns=""><mi mathvariant="normal">TiO</mi><mrow><mn>3</mn></mrow></msub></math> thin films

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NANOSCALE SCIENCE AND DESIGN

Surface-emitting spin-polarized ${In}_{0.4} {Ga}_{0.6} As/GaAs$ quantum-dot light-emitting diode

S. Ghosh; P. Bhattacharya

Appl. Phys. Lett. 80, 658–660 (2002) https://doi.org/10.1063/1.1436526

Abstract

View articletitled, Surface-emitting spin-polarized <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">In</mi><mrow><mtext>0.4</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>0.6</mtext></mrow></msub><mi mathvariant="normal" xmlns="">As/GaAs</mi></math> quantum-dot light-emitting diode

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Size-controlled highly luminescent silicon nanocrystals: A ${SiO/SiO}_{2}$ superlattice approach

M. Zacharias; J. Heitmann; R. Scholz; U. Kahler; M. Schmidt; J. Bläsing

Appl. Phys. Lett. 80, 661–663 (2002) https://doi.org/10.1063/1.1433906

Abstract

View articletitled, Size-controlled highly luminescent silicon nanocrystals: A <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO/SiO</mi><mrow><mn>2</mn></mrow></msub></math> superlattice approach

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Characterization of a two-dimensional cantilever array with through-wafer electrical interconnects

Eugene M. Chow; Goksen G. Yaralioglu; Calvin F. Quate; Thomas W. Kenny

Appl. Phys. Lett. 80, 664–666 (2002) https://doi.org/10.1063/1.1435804

Abstract

View articletitled, Characterization of a two-dimensional cantilever array with through-wafer electrical interconnects

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Single-electron tunneling effects in a metallic double dot device

T. Junno; S. -B. Carlsson; H. Q. Xu; L. Samuelson; A. O. Orlov; G. L. Snider

Appl. Phys. Lett. 80, 667–669 (2002) https://doi.org/10.1063/1.1436532

Abstract

View articletitled, Single-electron tunneling effects in a metallic double dot device

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Irradiation-induced formation of nanoparticles in cadmium niobate pyrochlore

W. Jiang; W. J. Weber; J. S. Young; L. A. Boatner

Appl. Phys. Lett. 80, 670–672 (2002) https://doi.org/10.1063/1.1445808

Abstract

View articletitled, Irradiation-induced formation of nanoparticles in cadmium niobate pyrochlore

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Production of nanostructures of silicon on silicon by atomic self-organization observed by scanning tunneling microscopy

D. Jones; V. Palermo

Appl. Phys. Lett. 80, 673–675 (2002) https://doi.org/10.1063/1.1445813

Abstract

View articletitled, Production of nanostructures of silicon on silicon by atomic self-organization observed by scanning tunneling microscopy

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Bandstructure modulation for carbon nanotubes in a uniform electric field

James O’Keeffe; Chengyu Wei; Kyeongjae Cho

Appl. Phys. Lett. 80, 676–678 (2002) https://doi.org/10.1063/1.1432441

Abstract

View articletitled, Bandstructure modulation for carbon nanotubes in a uniform electric field

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DEVICE PHYSICS

Light-emitting electrochemical cells using a molten delocalized salt

S. Panozzo; M. Armand; O. Stéphan

Appl. Phys. Lett. 80, 679–681 (2002) https://doi.org/10.1063/1.1436534

Abstract

View articletitled, Light-emitting electrochemical cells using a molten delocalized salt

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Shot noise in low-resistance magnetic tunnel junctions

Peter K. George; Y. Wu; R. M. White; Ed Murdock; Mark Tondra

Appl. Phys. Lett. 80, 682–684 (2002) https://doi.org/10.1063/1.1446210

Abstract

View articletitled, Shot noise in low-resistance magnetic tunnel junctions

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Determining the locus for photocarrier recombination in dye-sensitized solar cells

Kai Zhu; E. A. Schiff; N.-G. Park; J. van de Lagemaat; A. J. Frank

Appl. Phys. Lett. 80, 685–687 (2002) https://doi.org/10.1063/1.1436533

Abstract

View articletitled, Determining the locus for photocarrier recombination in dye-sensitized solar cells

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APPLIED BIOPHYSICS

Self-assembled dye-DNA network and its photoinduced electrical conductivity

Jianhua Gu; Shinnichi Tanaka; Youichi Otsuka; Hitoshi Tabata; Tomoji Kawai

Appl. Phys. Lett. 80, 688–690 (2002) https://doi.org/10.1063/1.1435805

Abstract

View articletitled, Self-assembled dye-DNA network and its photoinduced electrical conductivity

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INTERDISCIPLINARY AND GENERAL PHYSICS

Photoacoustic characterization of the mechanical properties of thin films

Carmen M. Hernandez; Todd W. Murray; Sridhar Krishnaswamy

Appl. Phys. Lett. 80, 691–693 (2002) https://doi.org/10.1063/1.1434303

Abstract

View articletitled, Photoacoustic characterization of the mechanical properties of thin films

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Acoustic communications in an enclosure using single-channel time-reversal acoustics

M. G. Heinemann; A. Larraza; K. B. Smith

Appl. Phys. Lett. 80, 694–696 (2002) https://doi.org/10.1063/1.1445479

Abstract

View articletitled, Acoustic communications in an enclosure using single-channel time-reversal acoustics

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Photoluminescence degradation in organic light-emitting devices

Lin Ke; Peng Chen; Soo Jin Chua

Appl. Phys. Lett. 80, 697–699 (2002) https://doi.org/10.1063/1.1446209

Abstract

View articletitled, Photoluminescence degradation in organic light-emitting devices

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COMMENTS

Comment on “Pressure-induced amorphization of ZrTiCuNiBe bulk glass-forming alloy” [Appl. Phys. Lett. 79, 1106 (2001)]

J. Z. Jiang

Appl. Phys. Lett. 80, 700 (2002) https://doi.org/10.1063/1.1445267

View articletitled, Comment on “Pressure-induced amorphization of ZrTiCuNiBe bulk glass-forming alloy” [Appl. Phys. Lett. 79, 1106 (2001)]

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Response to “Comment on ‘Pressure-induced amorphization of ZrTiCuNiBe bulk glass-forming alloy’ ” [Appl. Phys. Lett. 80, 700 (2002)]

Wei Hua Wang; R. J. Wang; D. Y. Dai; D. Q. Zhao; M. X. Pan; Y. S. Yao

Appl. Phys. Lett. 80, 701 (2002) https://doi.org/10.1063/1.1445268

View articletitled, Response to “Comment on ‘Pressure-induced amorphization of ZrTiCuNiBe bulk glass-forming alloy’ ” [Appl. Phys. Lett. 80, 700 (2002)]

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Issues

LASERS, OPTICS, AND OPTOELECTRONICS

STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

ELECTRONIC TRANSPORT AND SEMICONDUCTORS

MAGNETISM AND SUPERCONDUCTIVITY

DIELECTRICS AND FERROELECTRICITY

NANOSCALE SCIENCE AND DESIGN

DEVICE PHYSICS

APPLIED BIOPHYSICS

INTERDISCIPLINARY AND GENERAL PHYSICS

COMMENTS

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