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Volume 80, Issue 24

17 June 2002

Applied Physics Letters Cover Image for Volume 80, Issue 24

ISSN 0003-6951

EISSN 1077-3118

In this Issue

LASERS, OPTICS, AND OPTOELECTRONICS
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
ELECTRONIC TRANSPORT AND SEMICONDUCTORS
MAGNETISM AND SUPERCONDUCTIVITY
DIELECTRICS AND FERROELECTRICITY
NANOSCALE SCIENCE AND DESIGN
DEVICE PHYSICS
INTERDISCIPLINARY AND GENERAL PHYSICS
ERRATA

LASERS, OPTICS, AND OPTOELECTRONICS

Laser diode structure for the generation of high-power picosecond optical pulses

Sergey Vainshtein; Juha Kostamovaara; Larisa Shestak; Mikhail Sverdlov; Vladimir Tretyakov

Appl. Phys. Lett. 80, 4483–4485 (2002) https://doi.org/10.1063/1.1486478

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Dye-doped polymers for blue organic diode lasers

Marı́a A. Dı́az-Garcı́a; Susana Fernández De Ávila; Mark G. Kuzyk

Appl. Phys. Lett. 80, 4486–4488 (2002) https://doi.org/10.1063/1.1485303

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On-chain defect emission in electroluminescent polyfluorenes

J. M. Lupton; M. R. Craig; E. W. Meijer

Appl. Phys. Lett. 80, 4489–4491 (2002) https://doi.org/10.1063/1.1486482

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Parametric fluorescence in periodically poled ${LiNbO}_{3}$ buried waveguides

Katia Gallo; Marc De Micheli; Pascal Baldi

Appl. Phys. Lett. 80, 4492–4494 (2002) https://doi.org/10.1063/1.1486265

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Photonic band schemes of opals composed of periodic arrays of cored spheres depending on thickness of outer shells

Hiroyuki Takeda; Katsumi Yoshino

Appl. Phys. Lett. 80, 4495–4497 (2002) https://doi.org/10.1063/1.1487448

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Tunable photonic strength in porous GaP

J. Gómez Rivas; A. Lagendijk; R. W. Tjerkstra; D. Vanmaekelbergh; J. J. Kelly

Appl. Phys. Lett. 80, 4498–4500 (2002) https://doi.org/10.1063/1.1485316

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Probing confined interfacial excitations in buried layers by Brillouin light scattering

X. Zhang; R. Sooryakumar

Appl. Phys. Lett. 80, 4501–4503 (2002) https://doi.org/10.1063/1.1484550

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Preliminary investigations of infrared Er-related photoluminescence in ion-implanted ${In}_{0.07} {Ga}_{0.93} N$

M. R. Correia; S. Pereira; A. Cavaco; E. Pereira; E. Alves

Appl. Phys. Lett. 80, 4504–4506 (2002) https://doi.org/10.1063/1.1484545

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Ratio of deuterium to hydrogen termination on silicon surface in aqueous electrolyte solutions

Olga P. Chikalova-Luzina; Takahiro Matsumoto

Appl. Phys. Lett. 80, 4507–4509 (2002) https://doi.org/10.1063/1.1485314

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Green luminescence of ${Er}^{3+}$ in stoichiometric ${KYb(WO}_{4})_{2}$ single crystals

X. Mateos; F. Güell; M. C. Pujol; M. A. Bursukova; R. Solé; Jna. Gavaldà; M. Aguiló; F. Dı́az; J. Massons

Appl. Phys. Lett. 80, 4510–4512 (2002) https://doi.org/10.1063/1.1486477

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Three-dimensional phase field microelasticity theory of a complex elastically inhomogeneous solid

Yu U. Wang; Yongmei M. Jin; Armen G. Khachaturyan

Appl. Phys. Lett. 80, 4513–4515 (2002) https://doi.org/10.1063/1.1486249

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Reaction steps of silicidation in ${ZrO}_{2} / {SiO}_{2} / Si$ layered structure

Kouichi Muraoka

Appl. Phys. Lett. 80, 4516–4518 (2002) https://doi.org/10.1063/1.1486046

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Optical metastability in undoped GaN grown on Ga-rich GaN buffer layers

Subhabrata Dhar; Subhasis Ghosh

Appl. Phys. Lett. 80, 4519–4521 (2002) https://doi.org/10.1063/1.1482145

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Shock wave response of a zirconium-based bulk metallic glass and its composite

Shiming Zhuang; Jun Lu; Guruswami Ravichandran

Appl. Phys. Lett. 80, 4522–4524 (2002) https://doi.org/10.1063/1.1485300

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Structural behavior of ${Zr}_{52} {Ti}_{5} {Cu}_{18} {Ni}_{15} {Al}_{10}$ bulk metallic glass at high temperatures

Norbert Mattern; Jürgen Eckert; Uta Kühn; Helmut Hermann; Jan Sakowski; Gerhard Herms; Jörg Neuefeind

Appl. Phys. Lett. 80, 4525–4527 (2002) https://doi.org/10.1063/1.1486480

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Temperature dependence of the growth front roughening of oligomer films

D. Tsamouras; G. Palasantzas

Appl. Phys. Lett. 80, 4528–4530 (2002) https://doi.org/10.1063/1.1484250

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Reversible changes in the lattice site structure for In implanted into GaN

K. Lorenz; F. Ruske; R. Vianden

Appl. Phys. Lett. 80, 4531–4533 (2002) https://doi.org/10.1063/1.1485117

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Specific volume of glass-forming liquid ${Pd}_{43} {Cu}_{27} {Ni}_{10} P_{20}$ and related thermodynamic aspects of the glass transition

I.-R. Lu; G. P. Görler; R. Willnecker

Appl. Phys. Lett. 80, 4534–4536 (2002) https://doi.org/10.1063/1.1487922

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Contact-induced defect propagation in ZnO

J. E. Bradby; S. O. Kucheyev; J. S. Williams; C. Jagadish; M. V. Swain; P. Munroe; M. R. Phillips

Appl. Phys. Lett. 80, 4537–4539 (2002) https://doi.org/10.1063/1.1486264

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Effect of Ga content on defect states in CuIn_1−xGa_xSe₂ photovoltaic devices

J. T. Heath; J. D. Cohen; W. N. Shafarman; D. X. Liao; A. A. Rockett

Appl. Phys. Lett. 80, 4540–4542 (2002) https://doi.org/10.1063/1.1485301

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Theoretical valence band offsets of semiconductor heterojunctions

Kyurhee Shim; Herschel Rabitz

Appl. Phys. Lett. 80, 4543–4545 (2002) https://doi.org/10.1063/1.1483904

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Anti-domain-free GaP, grown in atomically flat (001) Si sub-μm-sized openings

B. J. Ohlsson; J.-O. Malm; A. Gustafsson; L. Samuelson

Appl. Phys. Lett. 80, 4546–4548 (2002) https://doi.org/10.1063/1.1485311

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Electroreflectance of the AlGaN/GaN heterostructure and two-dimensional electron gas

S. R. Kurtz; A. A. Allerman; D. D. Koleske; G. M. Peake

Appl. Phys. Lett. 80, 4549–4551 (2002) https://doi.org/10.1063/1.1487447

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Decrease in the leakage current density of Si-based metal–oxide–semiconductor diodes by cyanide treatment

Akira Asano; Asuha; Osamu Maida; Yoshihiro Todokoro; Hikaru Kobayashi

Appl. Phys. Lett. 80, 4552–4554 (2002) https://doi.org/10.1063/1.1484249

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Characteristics of MgO/GaN gate-controlled metal–oxide– semiconductor diodes

Jihyun Kim; R. Mehandru; B. Luo; F. Ren; B. P. Gila; A. H. Onstine; C. R. Abernathy; S. J. Pearton; Y. Irokawa

Appl. Phys. Lett. 80, 4555–4557 (2002) https://doi.org/10.1063/1.1487903

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A study of subbands in AlGaN/GaN high-electron-mobility transistor structures using low-temperature photoluminescence spectroscopy

C. Y. Fang; C. F. Lin; Edward Yi Chang; M. S. Feng

Appl. Phys. Lett. 80, 4558–4560 (2002) https://doi.org/10.1063/1.1485310

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Ferromagnetic properties of ${Zn}_{1−x} {Mn}_{x} O$ epitaxial thin films

S. W. Jung; S.-J. An; Gyu-Chul Yi; C. U. Jung; Sung-Ik Lee; Sunglae Cho

Appl. Phys. Lett. 80, 4561–4563 (2002) https://doi.org/10.1063/1.1487927

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Discrete surface state related to nitrogen-vacancy defect on plasma-treated GaN surfaces

Tamotsu Hashizume; Ryusuke Nakasaki

Appl. Phys. Lett. 80, 4564–4566 (2002) https://doi.org/10.1063/1.1485309

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Detection of single charges and their generation-recombination dynamics in Si nanowires at room temperature

Akira Fujiwara; Kenji Yamazaki; Yasuo Takahashi

Appl. Phys. Lett. 80, 4567–4569 (2002) https://doi.org/10.1063/1.1487451

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Defect-related density of states in low-band gap ${In}_{x} {Ga}_{1−x} As / {InAs}_{y} P_{1−y}$ double heterostructures grown on InP substrates

T. H. Gfroerer; L. P. Priestley; F. E. Weindruch; M. W. Wanlass

Appl. Phys. Lett. 80, 4570–4572 (2002) https://doi.org/10.1063/1.1487449

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MAGNETISM AND SUPERCONDUCTIVITY

Large low-field magnetoresistance and $T_{C}$ in polycrystalline $({Ba}_{0.8} {Sr}_{0.2})_{2−x} {La}_{x} {FeMoO}_{6}$ double perovskites

D. Serrate; J. M. De Teresa; J. Blasco; M. R. Ibarra; L. Morellón; C. Ritter

Appl. Phys. Lett. 80, 4573–4575 (2002) https://doi.org/10.1063/1.1485119

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Orthogonal pinning of two ferromagnetic layers in a synthetic spin valve

Robert S. Beach; Jeffrey McCord; Patrick Webb; Daniele Mauri

Appl. Phys. Lett. 80, 4576–4578 (2002) https://doi.org/10.1063/1.1485106

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Enhanced transparency ramp-type Josephson contacts through interlayer deposition

Henk-Jan H. Smilde; Hans Hilgenkamp; Guus Rijnders; Horst Rogalla; Dave H. A. Blank

Appl. Phys. Lett. 80, 4579–4581 (2002) https://doi.org/10.1063/1.1485305

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Spin polarized tunneling through single-crystal GaAs(001) barriers

S. Kreuzer; J. Moser; W. Wegscheider; D. Weiss; M. Bichler; D. Schuh

Appl. Phys. Lett. 80, 4582–4584 (2002) https://doi.org/10.1063/1.1486044

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Single-flux-quantum pump based on a three-junction superconducting quantum interference device

Yoshinao Mizugaki; Jian Chen; Satoshi Nishikata; Keiji Sugi; Kensuke Nakajima; Tsutomu Yamashita

Appl. Phys. Lett. 80, 4585–4587 (2002) https://doi.org/10.1063/1.1485308

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Current-induced dendritic magnetic instability in superconducting ${MgB}_{2}$ films

A. V. Bobyl; D. V. Shantsev; T. H. Johansen; W. N. Kang; H. J. Kim; E. M. Choi; S. I. Lee

Appl. Phys. Lett. 80, 4588–4590 (2002) https://doi.org/10.1063/1.1485304

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Spin-filter diode based on ${ZnSe/Zn}_{1−x} {Mn}_{x} {Se/Zn}_{1−y} {Mn}_{y} Se/ZnSe$ heterostructures

Yong Guo; Xin-Yi Chen; Feng Zhai; Bing-Lin Gu; Yoshiyuki Kawazoe

Appl. Phys. Lett. 80, 4591–4593 (2002) https://doi.org/10.1063/1.1485121

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DIELECTRICS AND FERROELECTRICITY

Critical properties of nanoporous low dielectric constant films revealed by Brillouin light scattering and surface acoustic wave spectroscopy

C. M. Flannery; T. Wittkowski; K. Jung; B. Hillebrands; M. R. Baklanov

Appl. Phys. Lett. 80, 4594–4596 (2002) https://doi.org/10.1063/1.1478775

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On the role of interface states in low-voltage leakage currents of metal–oxide–semiconductor structures

F. Crupi; C. Ciofi; A. Germanò; G. Iannaccone; J. H. Stathis; S. Lombardo

Appl. Phys. Lett. 80, 4597–4599 (2002) https://doi.org/10.1063/1.1487450

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Effects of ultrathin tantalum seeding layers on sol-gel-derived ${SrBi}_{2} {Ta}_{2} O_{9}$ thin films

Ching-Chich Leu; Chao-Hsin Chien; Ming-Jui Yang; Ming-Che Yang; Tiao-Yuan Huang; Hung-Tao Lin; Chen-Ti Hu

Appl. Phys. Lett. 80, 4600–4602 (2002) https://doi.org/10.1063/1.1486043

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Degradation of the dielectric permittivity of a strongly oriented ${Ba}_{0.25} {Sr}_{0.75} {TiO}_{3}$ layer by replacing a ${SrRuO}_{3}$ electrode with an Ag one

Yu. A. Boikov; T. Claeson

Appl. Phys. Lett. 80, 4603–4605 (2002) https://doi.org/10.1063/1.1485318

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Measurement of piezoelectric coefficients of lead zirconate titanate thin films by strain-monitoring pneumatic loading method

Gun-Tae Park; Jong-Jin Choi; Jungho Ryu; Huiqing Fan; Hyoun-Ee Kim

Appl. Phys. Lett. 80, 4606–4608 (2002) https://doi.org/10.1063/1.1487901

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NANOSCALE SCIENCE AND DESIGN

Independent optically addressable nanoparticle-polymer optomechanical composites

S. R. Sershen; S. L. Westcott; N. J. Halas; J. L. West

Appl. Phys. Lett. 80, 4609–4611 (2002) https://doi.org/10.1063/1.1481536

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Room-temperature metallic behavior in nanophase polypyrrole

S. Bhattacharyya; S. K. Saha

Appl. Phys. Lett. 80, 4612–4613 (2002) https://doi.org/10.1063/1.1486475

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Color-selective semiconductor nanocrystal laser

Hans-Jürgen Eisler; Vikram C. Sundar; Moungi G. Bawendi; Michael Walsh; Henry I. Smith; Victor Klimov

Appl. Phys. Lett. 80, 4614–4616 (2002) https://doi.org/10.1063/1.1485125

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Fabrication of Si single-electron transistors having double ${SiO}_{2}$ barriers

Yuhei Ito; Tsuyoshi Hatano; Anri Nakajima; Shin Yokoyama

Appl. Phys. Lett. 80, 4617–4619 (2002) https://doi.org/10.1063/1.1485306

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Temperature dependence of intersublevel absorption in InAs/GaAs self-assembled quantum dots

F. Bras; P. Boucaud; S. Sauvage; G. Fishman; J.-M. Gérard

Appl. Phys. Lett. 80, 4620–4622 (2002) https://doi.org/10.1063/1.1487446

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Mechanical properties of high-aspect-ratio atomic-force microscope tips

G. Jänchen; P. Hoffmann; A. Kriele; H. Lorenz; A. J. Kulik; G. Dietler

Appl. Phys. Lett. 80, 4623–4625 (2002) https://doi.org/10.1063/1.1485307

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Electrically isolated SiGe quantum dots

Emma Tevaarwerk; P. Rugheimer; O. M. Castellini; D. G. Keppel; S. T. Utley; D. E. Savage; M. G. Lagally; M. A. Eriksson

Appl. Phys. Lett. 80, 4626–4628 (2002) https://doi.org/10.1063/1.1484251

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Nanometer-sized optical waveguides fabricated by anodic oxidation using a scanning near-field optical microscope

T. Onuki; T. Tokizaki; Y. Watanabe; T. Tsuchiya; T. Tani

Appl. Phys. Lett. 80, 4629–4631 (2002) https://doi.org/10.1063/1.1486479

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Carbon-nanotube-based resonant-circuit sensor for ammonia

S. Chopra; A. Pham; J. Gaillard; A. Parker; A. M. Rao

Appl. Phys. Lett. 80, 4632–4634 (2002) https://doi.org/10.1063/1.1486481

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Submicron liquid crystal pixels on a nanopatterned indium tin oxide surface

M. Behdani; A. Rastegar; S. H. Keshmiri; S. I. Missat; E. Vlieg; Th. Rasing

Appl. Phys. Lett. 80, 4635–4637 (2002) https://doi.org/10.1063/1.1484556

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Forming silicon carbon nitride crystals and silicon carbon nitride nanotubes by microwave plasma-enhanced chemical vapor deposition

Hui Lin Chang; Chih Ming Hsu; Cheng Tzu Kuo

Appl. Phys. Lett. 80, 4638–4640 (2002) https://doi.org/10.1063/1.1487925

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SiC and its bicrystalline nanowires with uniform BN coatings

C. C. Tang; Y. Bando; T. Sato; K. Kurashima; X. X. Ding; Z. W. Gan; S. R. Qi

Appl. Phys. Lett. 80, 4641–4643 (2002) https://doi.org/10.1063/1.1487926

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Hall magnetometry on a single iron nanoparticle

Yongqing Li; Peng Xiong; Stephan von Molnár; Steffen Wirth; Yuzo Ohno; Hideo Ohno

Appl. Phys. Lett. 80, 4644–4646 (2002) https://doi.org/10.1063/1.1487921

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Effects of nanotube waviness on the modulus of nanotube-reinforced polymers

F. T. Fisher; R. D. Bradshaw; L. C. Brinson

Appl. Phys. Lett. 80, 4647–4649 (2002) https://doi.org/10.1063/1.1487900

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Effects of rapid thermal annealing on the optical properties of 1.3 μm InGaAlAs multiquantum wells grown by digital-alloy molecular-beam epitaxy

Jin Dong Song; Jae Su Yu; Jong Min Kim; Seong Ju Bae; Yong Tak Lee

Appl. Phys. Lett. 80, 4650–4652 (2002) https://doi.org/10.1063/1.1485132

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DEVICE PHYSICS

Rotors produced and driven in laser tweezers with reversed direction of rotation

Péter Galajda; Pál Ormos

Appl. Phys. Lett. 80, 4653–4655 (2002) https://doi.org/10.1063/1.1480885

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Flat panel imagers with pixel level amplifiers based on polycrystalline silicon thin-film transistor technology

J. P. Lu; K. Van Schuylenbergh; J. Ho; Y. Wang; J. B. Boyce; R. A. Street

Appl. Phys. Lett. 80, 4656–4658 (2002) https://doi.org/10.1063/1.1481788

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Improvement of hole injection in phenyl-substituted electroluminescent devices by reduction of oxygen deficiency near the indium tin oxide surface

Beeling Low; Furong Zhu; Keran Zhang; Soojin Chua

Appl. Phys. Lett. 80, 4659–4661 (2002) https://doi.org/10.1063/1.1484544

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INTERDISCIPLINARY AND GENERAL PHYSICS

Measurement of electronic stopping power of swift heavy ions using high-resolution time-of-flight spectrometer

Y. Zhang; G. Possnert; W. J. Weber

Appl. Phys. Lett. 80, 4662–4664 (2002) https://doi.org/10.1063/1.1486042

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ERRATA

Erratum: “Analytic method for evaluation of the field of a charge traversing a geometric discontinuity” [Appl. Phys. Lett. 80, 2842 (2002)]

S. Banna; L. Schächter

Appl. Phys. Lett. 80, 4665 (2002) https://doi.org/10.1063/1.1488135

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