Skip Nav Destination
Issues
3 June 2002
ISSN 0003-6951
EISSN 1077-3118
In this Issue
LASERS, OPTICS, AND OPTOELECTRONICS
Comprehensive modeling of the electro-optical-thermal behavior of (AlGaIn)(AsSb)-based 2.0 μm diode lasers
Appl. Phys. Lett. 80, 4085–4087 (2002)
https://doi.org/10.1063/1.1481979
High-power quantum cascade lasers
Appl. Phys. Lett. 80, 4091–4093 (2002)
https://doi.org/10.1063/1.1482782
Room-temperature operation of electrically pumped quantum-cascade microcylinder lasers
Appl. Phys. Lett. 80, 4094–4096 (2002)
https://doi.org/10.1063/1.1484246
Electro-optic characteristics of de Vries tilted smectic liquid crystals: Analog behavior in the smectic and smectic phases
N. A. Clark; T. Bellini; R.-F. Shao; D. Coleman; S. Bardon; D. R. Link; J. E. Maclennan; X.-H. Chen; M. D. Wand; D. M. Walba; P. Rudquist; S. T. Lagerwall
Appl. Phys. Lett. 80, 4097–4099 (2002)
https://doi.org/10.1063/1.1480472
Comparing leakage currents and dark count rates in Geiger-mode avalanche photodiodes
Appl. Phys. Lett. 80, 4100–4102 (2002)
https://doi.org/10.1063/1.1483119
Mid-infrared (λ≈7.4 μm) quantum cascade laser amplifier for high power single-mode emission and improved beam quality
Appl. Phys. Lett. 80, 4103–4105 (2002)
https://doi.org/10.1063/1.1479453
Subwavelength patterns and high detection efficiency in fluorescence correlation spectroscopy using photonic structures
Appl. Phys. Lett. 80, 4106–4108 (2002)
https://doi.org/10.1063/1.1483116
PLASMAS AND ELECTRICAL DISCHARGES
Plasma chemistry fluctuations in a reactive arc plasma in the presence of magnetic fields
Appl. Phys. Lett. 80, 4109–4111 (2002)
https://doi.org/10.1063/1.1483128
Modification of laser energy deposition in a gas of deuterium clusters
Appl. Phys. Lett. 80, 4112–4114 (2002)
https://doi.org/10.1063/1.1483129
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
Stress as a governing parameter to control the crystallization of amorphous silicon films by thermal annealing
Appl. Phys. Lett. 80, 4115–4117 (2002)
https://doi.org/10.1063/1.1482795
Stability of interfacial dislocations in (001) silicon surfacial grain boundaries
Appl. Phys. Lett. 80, 4121–4123 (2002)
https://doi.org/10.1063/1.1481957
Characteristics of SrS:Cu thin-film electroluminescent device fabricated by pulsed-laser deposition
Appl. Phys. Lett. 80, 4124–4126 (2002)
https://doi.org/10.1063/1.1483925
Spatially-resolved valence-electron energy-loss spectroscopy of Zr-oxide and Zr-silicate films
Appl. Phys. Lett. 80, 4127–4129 (2002)
https://doi.org/10.1063/1.1483130
Suppression of phase segregation during molecular-beam epitaxial growth of GaMnN using nitrogen–hydrogen plasma
Appl. Phys. Lett. 80, 4139–4141 (2002)
https://doi.org/10.1063/1.1483387
Role of substrate in the pseudomorphic stabilization of rocksalt-type AlN phase in AlN/TiN superlattices
Appl. Phys. Lett. 80, 4142–4144 (2002)
https://doi.org/10.1063/1.1482798
ELECTRONIC TRANSPORT AND SEMICONDUCTORS
First-principles calculation of the piezoelectric tensor of III–V nitrides
Appl. Phys. Lett. 80, 4145–4147 (2002)
https://doi.org/10.1063/1.1482796
Mechanisms affecting the photoluminescence spectra of GaInNAs after post-growth annealing
Appl. Phys. Lett. 80, 4148–4150 (2002)
https://doi.org/10.1063/1.1481978
Electron lifetime of heavily Be-doped as a function of growth temperature and doping density
Appl. Phys. Lett. 80, 4151–4153 (2002)
https://doi.org/10.1063/1.1483126
Electron field emission from excimer laser crystallized amorphous silicon
Appl. Phys. Lett. 80, 4154–4156 (2002)
https://doi.org/10.1063/1.1482141
Strained-Si/SiGe-on-insulator inversion layers: The role of strained-Si layer thickness on electron mobility
Appl. Phys. Lett. 80, 4160–4162 (2002)
https://doi.org/10.1063/1.1483907
Piezoresponse force microscopy for polarity imaging of GaN
Appl. Phys. Lett. 80, 4166–4168 (2002)
https://doi.org/10.1063/1.1483117
Electron conduction through quasi-one-dimensional indium wires on silicon
Appl. Phys. Lett. 80, 4169–4171 (2002)
https://doi.org/10.1063/1.1483929
Fast time response from Si–SiGe undulating layer superlattices
Appl. Phys. Lett. 80, 4172–4174 (2002)
https://doi.org/10.1063/1.1483121
Effects of postmetallization annealing on ultrathin layer properties
Appl. Phys. Lett. 80, 4175–4177 (2002)
https://doi.org/10.1063/1.1482147
MAGNETISM AND SUPERCONDUCTIVITY
Local control of dynamic nuclear polarization in quantum Hall devices
Appl. Phys. Lett. 80, 4178–4180 (2002)
https://doi.org/10.1063/1.1483910
Room-temperature observation of high-spin polarization of epitaxial island films at the Fermi energy
Appl. Phys. Lett. 80, 4181–4183 (2002)
https://doi.org/10.1063/1.1482142
Characterization of superconducting structures designed for qubit realizations
E. Il’ichev; Th. Wagner; L. Fritzsch; J. Kunert; V. Schultze; T. May; H. E. Hoenig; H. G. Meyer; M. Grajcar; D. Born; W. Krech; M. V. Fistul; A. M. Zagoskin
Appl. Phys. Lett. 80, 4184–4186 (2002)
https://doi.org/10.1063/1.1481988
Room-temperature ferromagnetism in Cr-doped GaN single crystals
Appl. Phys. Lett. 80, 4187–4189 (2002)
https://doi.org/10.1063/1.1483115
Magnetic force microscopy observation of antivortex core with perpendicular magnetization in patterned thin film of permalloy
Appl. Phys. Lett. 80, 4190–4192 (2002)
https://doi.org/10.1063/1.1483386
Magnetic moment and anisotropy in clusters
Appl. Phys. Lett. 80, 4193–4195 (2002)
https://doi.org/10.1063/1.1482793
Superconductivity in thin-film bilayers
Appl. Phys. Lett. 80, 4196–4198 (2002)
https://doi.org/10.1063/1.1480888
Detection of a single magnetic microbead using a miniaturized silicon Hall sensor
Appl. Phys. Lett. 80, 4199–4201 (2002)
https://doi.org/10.1063/1.1483909
Transport properties of (110) films grown on buffered Si substrates by chemical vapor deposition
Appl. Phys. Lett. 80, 4202–4204 (2002)
https://doi.org/10.1063/1.1481534
DIELECTRICS AND FERROELECTRICITY
Dielectric and piezoelectric enhancement due to 90° domain rotation in the tetragonal phase of
Appl. Phys. Lett. 80, 4205–4207 (2002)
https://doi.org/10.1063/1.1483120
Anomalous isothermal charging and discharging currents in polytetrafluoroethylene
Appl. Phys. Lett. 80, 4208–4210 (2002)
https://doi.org/10.1063/1.1483928
Nonlinear macroscopic polarization in quantum wells
Appl. Phys. Lett. 80, 4211–4213 (2002)
https://doi.org/10.1063/1.1483906
Importance of structural irregularity on dielectric loss in crystals
Appl. Phys. Lett. 80, 4217–4219 (2002)
https://doi.org/10.1063/1.1482791
NANOSCALE SCIENCE AND DESIGN
Molecular patterning through high-resolution polymethylmethacrylate masks
Appl. Phys. Lett. 80, 4220–4222 (2002)
https://doi.org/10.1063/1.1481784
Template-catalyst-free growth of highly ordered boron nanowire arrays
L. M. Cao; K. Hahn; C. Scheu; M. Rühle; Y. Q. Wang; Z. Zhang; C. X. Gao; Y. C. Li; X. Y. Zhang; M. He; L. L. Sun; W. K. Wang
Appl. Phys. Lett. 80, 4226–4228 (2002)
https://doi.org/10.1063/1.1483131
Spin splitting of the electron ground states of InAs quantum dots
Appl. Phys. Lett. 80, 4229–4231 (2002)
https://doi.org/10.1063/1.1483112
Metalorganic vapor-phase epitaxial growth of vertically well-aligned ZnO nanorods
Appl. Phys. Lett. 80, 4232–4234 (2002)
https://doi.org/10.1063/1.1482800
X-ray photoemission spectroscopy study of fluorinated single-walled carbon nanotubes
Kay Hyeok An; Jeong Goo Heo; Kwan Goo Jeon; Dong Jae Bae; Chulsu Jo; Cheol Woong Yang; Chong-Yun Park; Young Hee Lee; Young Seak Lee; Young Su Chung
Appl. Phys. Lett. 80, 4235–4237 (2002)
https://doi.org/10.1063/1.1482801
Classical microwave response of coupled quantum dots in single-wall carbon nanotubes
Appl. Phys. Lett. 80, 4238–4240 (2002)
https://doi.org/10.1063/1.1483127
Metalorganic chemical vapor deposition of aluminum oxide on Si: Evidence of interface formation
Appl. Phys. Lett. 80, 4241–4243 (2002)
https://doi.org/10.1063/1.1483903
Mechanics of nanosprings: Stiffness and Young’s modulus of molybdenum-based nanocrystals
Appl. Phys. Lett. 80, 4244–4246 (2002)
https://doi.org/10.1063/1.1483927
DEVICE PHYSICS
Single-photon detector in the microwave range
Appl. Phys. Lett. 80, 4250–4252 (2002)
https://doi.org/10.1063/1.1482787
Enhanced channel mobility of 4H–SiC metal–oxide–semiconductor transistors fabricated with standard polycrystalline silicon technology and gate-oxide nitridation
Reinhold Schörner; Peter Friedrichs; Dethard Peters; Dietrich Stephani; Sima Dimitrijev; Philippe Jamet
Appl. Phys. Lett. 80, 4253–4255 (2002)
https://doi.org/10.1063/1.1483125
INTERDISCIPLINARY AND GENERAL PHYSICS
Absolute emission current density of from crystal
Appl. Phys. Lett. 80, 4259–4261 (2002)
https://doi.org/10.1063/1.1476958
Quasistationary states of a relativistic field-emission-limited diode employing a high-transparency mesh anode
Appl. Phys. Lett. 80, 4262–4264 (2002)
https://doi.org/10.1063/1.1482789
Optimization of resonant two-photon absorption with adaptive quantum control
Appl. Phys. Lett. 80, 4265–4267 (2002)
https://doi.org/10.1063/1.1481188
Calorimetric studies of the to transformation in FePt and CoPt thin films
Appl. Phys. Lett. 80, 4268–4270 (2002)
https://doi.org/10.1063/1.1483924
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Superconducting flip-chip devices using indium microspheres on Au-passivated Nb or NbN as under-bump metallization layer
Achintya Paradkar, Paul Nicaise, et al.