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Issues
27 May 2002
ISSN 0003-6951
EISSN 1077-3118
In this Issue
LASERS, OPTICS, AND OPTOELECTRONICS
Square-lattice photonic band-gap single-cell laser operating in the lowest-order whispering gallery mode
Appl. Phys. Lett. 80, 3883–3885 (2002)
https://doi.org/10.1063/1.1480103
Comparison of heat-affected zones due to nanosecond and femtosecond laser pulses using transmission electronic microscopy
Appl. Phys. Lett. 80, 3886–3888 (2002)
https://doi.org/10.1063/1.1481195
Tunable and coherent nanosecond radiation in the range of based on difference-frequency generation in gallium selenide
Appl. Phys. Lett. 80, 3889–3891 (2002)
https://doi.org/10.1063/1.1482144
Sub-500-fs soliton-like pulse in a passively mode-locked broadband surface-emitting laser with 100 mW average power
Appl. Phys. Lett. 80, 3892–3894 (2002)
https://doi.org/10.1063/1.1482143
Improving the thermal stability of organic light-emitting diodes by using a modified phthalocyanine layer
Appl. Phys. Lett. 80, 3895–3897 (2002)
https://doi.org/10.1063/1.1481540
Single-fundamental-mode photonic-crystal vertical-cavity surface-emitting lasers
Appl. Phys. Lett. 80, 3901–3903 (2002)
https://doi.org/10.1063/1.1481984
PLASMAS AND ELECTRICAL DISCHARGES
Control and analysis of ion species in inductively coupled plasma with inert gas mixing
Appl. Phys. Lett. 80, 3907–3909 (2002)
https://doi.org/10.1063/1.1479452
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
Self-organized growth of three-dimensional quantum-dot superlattices
Appl. Phys. Lett. 80, 3910–3912 (2002)
https://doi.org/10.1063/1.1481541
Strain and composition distributions in wurtzite InGaN/GaN layers extracted from x-ray reciprocal space mapping
S. Pereira; M. R. Correia; E. Pereira; K. P. O’Donnell; E. Alves; A. D. Sequeira; N. Franco; I. M. Watson; C. J. Deatcher
Appl. Phys. Lett. 80, 3913–3915 (2002)
https://doi.org/10.1063/1.1481786
Effects of impregnation on excimer-laser-induced oxygen-deficient center formation in synthetic glass
Appl. Phys. Lett. 80, 3916–3918 (2002)
https://doi.org/10.1063/1.1481789
Spectrally modified chirped pulse generation of sustained shock waves
Appl. Phys. Lett. 80, 3919–3921 (2002)
https://doi.org/10.1063/1.1481986
Epitaxial growth and electronic structure of films
Appl. Phys. Lett. 80, 3922–3924 (2002)
https://doi.org/10.1063/1.1481767
Ultrafast x-ray pulse generation by focusing femtosecond infrared laser pulses onto aqueous solutions of alkali metal chloride
Appl. Phys. Lett. 80, 3925–3927 (2002)
https://doi.org/10.1063/1.1482135
Longitudinal Excitons in GaN
Appl. Phys. Lett. 80, 3928–3930 (2002)
https://doi.org/10.1063/1.1471372
Strain-induced surface segregation in heteroepitaxy
Appl. Phys. Lett. 80, 3931–3933 (2002)
https://doi.org/10.1063/1.1482792
Gallium vacancy and the residual acceptor in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence
C. C. Ling; W. K. Mui; C. H. Lam; C. D. Beling; S. Fung; M. K. Lui; K. W. Cheah; K. F. Li; Y. W. Zhao; M. Gong
Appl. Phys. Lett. 80, 3934–3936 (2002)
https://doi.org/10.1063/1.1482419
High-density and size-controlled GaN self-assembled quantum dots grown by metalorganic chemical vapor deposition
Appl. Phys. Lett. 80, 3937–3939 (2002)
https://doi.org/10.1063/1.1482416
Nanoporous-carbon films for microsensor preconcentrators
Appl. Phys. Lett. 80, 3940–3942 (2002)
https://doi.org/10.1063/1.1480469
Time-resolved photoluminescence of quaternary AlInGaN-based multiple quantum wells
Appl. Phys. Lett. 80, 3943–3945 (2002)
https://doi.org/10.1063/1.1482415
Dislocation behavior in InGaN/GaN multi-quantum-well structure grown by metalorganic chemical vapor deposition
Appl. Phys. Lett. 80, 3949–3951 (2002)
https://doi.org/10.1063/1.1481983
ELECTRONIC TRANSPORT AND SEMICONDUCTORS
Reliable extraction of the energy distribution of interface traps in ultrathin metal–oxide–semiconductor structures
Appl. Phys. Lett. 80, 3952–3954 (2002)
https://doi.org/10.1063/1.1481194
Characterization of band bendings on Ga-face and N-face GaN films grown by metalorganic chemical-vapor deposition
Appl. Phys. Lett. 80, 3955–3957 (2002)
https://doi.org/10.1063/1.1481782
Enhanced nitrogen incorporation by pulsed laser annealing of formed by N ion implantation
Appl. Phys. Lett. 80, 3958–3960 (2002)
https://doi.org/10.1063/1.1481196
High hole mobility at room temperature in hydrogen-terminated (001) diamond
Appl. Phys. Lett. 80, 3961–3963 (2002)
https://doi.org/10.1063/1.1481535
Magnetic properties of n-GaMnN thin films
G. T. Thaler; M. E. Overberg; B. Gila; R. Frazier; C. R. Abernathy; S. J. Pearton; J. S. Lee; S. Y. Lee; Y. D. Park; Z. G. Khim; J. Kim; F. Ren
Appl. Phys. Lett. 80, 3964–3966 (2002)
https://doi.org/10.1063/1.1481533
Unusual properties of the fundamental band gap of InN
In Special Collection:
APL Classic Papers
J. Wu; W. Walukiewicz; K. M. Yu; J. W. Ager, III; E. E. Haller; Hai Lu; William J. Schaff; Yoshiki Saito; Yasushi Nanishi
Appl. Phys. Lett. 80, 3967–3969 (2002)
https://doi.org/10.1063/1.1482786
MAGNETISM AND SUPERCONDUCTIVITY
Observation of coherent oxide precipitates in polycrystalline
Appl. Phys. Lett. 80, 3970–3972 (2002)
https://doi.org/10.1063/1.1481239
Diffusion study of the exchange-biased NiFe/MnIr/CoFe electrode in magnetic tunnel junctions
Appl. Phys. Lett. 80, 3976–3978 (2002)
https://doi.org/10.1063/1.1481185
Scanning tunneling potentiometry search for mesoscopic phase separation in
Appl. Phys. Lett. 80, 3979–3981 (2002)
https://doi.org/10.1063/1.1481787
All trilayer junctions with wiring layers
Appl. Phys. Lett. 80, 3985–3987 (2002)
https://doi.org/10.1063/1.1481765
Extraordinary magnetoresistance effect in a microstructured metal–semiconductor hybrid structure
Appl. Phys. Lett. 80, 3988–3990 (2002)
https://doi.org/10.1063/1.1481982
Epitaxial thin films grown by rf sputtering
Mingji Jin; Q. Y. Chen; Udom Tipparach; T. P. Chen; C. Wang; H. W. Seo; Lixi Yuan; W. K. Chu; K. S. No; C. L. Chen; Y. S. Song
Appl. Phys. Lett. 80, 3991–3993 (2002)
https://doi.org/10.1063/1.1481543
Artificially induced reduction of the dissipation anisotropy in high-temperature superconductors
Appl. Phys. Lett. 80, 3994–3996 (2002)
https://doi.org/10.1063/1.1482420
DIELECTRICS AND FERROELECTRICITY
Diffuse phase transition and relaxor behavior in thin films
Appl. Phys. Lett. 80, 3997–3999 (2002)
https://doi.org/10.1063/1.1481981
Effect of domain structure on thermal stability of nanoscale ferroelectric domains
Appl. Phys. Lett. 80, 4000–4002 (2002)
https://doi.org/10.1063/1.1481537
Near-electrode model of transient currents in thin film capacitor structures
Appl. Phys. Lett. 80, 4003–4005 (2002)
https://doi.org/10.1063/1.1482140
NANOSCALE SCIENCE AND DESIGN
Ionic/electronic mixed conductor tip of a scanning tunneling microscope as a metal atom source for nanostructuring
Appl. Phys. Lett. 80, 4009–4011 (2002)
https://doi.org/10.1063/1.1480887
Nonmagnetic semiconductors as read-head sensors for ultra-high-density magnetic recording
S. A. Solin; D. R. Hines; A. C. H. Rowe; J. S. Tsai; Yu. A. Pashkin; S. J. Chung; N. Goel; M. B. Santos
Appl. Phys. Lett. 80, 4012–4014 (2002)
https://doi.org/10.1063/1.1481238
Small-signal modulation response of quantum-dot lasers
Appl. Phys. Lett. 80, 4015–4017 (2002)
https://doi.org/10.1063/1.1479454
Growth of aligned carbon nanotubes with controlled site density
Appl. Phys. Lett. 80, 4018–4020 (2002)
https://doi.org/10.1063/1.1482790
Heterotic phase in ferromagnetism of a nerve-cell-like fractal-based complex
Appl. Phys. Lett. 80, 4021–4023 (2002)
https://doi.org/10.1063/1.1482146
Characterization of vapor-phase-grown ZnSe nanoparticles
Appl. Phys. Lett. 80, 4024–4026 (2002)
https://doi.org/10.1063/1.1481769
Modeling of kink-shaped carbon-nanotube Schottky diode with gate bias modulation
Appl. Phys. Lett. 80, 4027–4029 (2002)
https://doi.org/10.1063/1.1481213
Substrate nanoprotrusions and their effect on field electron emission from amorphous-diamond films
Appl. Phys. Lett. 80, 4030–4032 (2002)
https://doi.org/10.1063/1.1479449
Energy distribution for undergate-type triode carbon nanotube field emitters
SeGi Yu; Whikun Yi; Jeonghee Lee; Taewon Jeong; Sunghwan Jin; Jungna Heo; J. H. Kang; Y. S. Choi; Chang Soo Lee; Ji-Beom Yoo; J. M. Kim
Appl. Phys. Lett. 80, 4036–4038 (2002)
https://doi.org/10.1063/1.1481547
DEVICE PHYSICS
Strain-induced tuning of metal–insulator transition in
Appl. Phys. Lett. 80, 4039–4041 (2002)
https://doi.org/10.1063/1.1480475
Investigation of the interfacial properties of laminated polymer diodes
Appl. Phys. Lett. 80, 4042–4044 (2002)
https://doi.org/10.1063/1.1481542
Carbon nanotube electron emitters with a gated structure using backside exposure processes
Deuk-Seok Chung; S. H. Park; H. W. Lee; J. H. Choi; S. N. Cha; J. W. Kim; J. E. Jang; K. W. Min; S. H. Cho; M. J. Yoon; J. S. Lee; C. K. Lee; J. H. Yoo; Jong-Min Kim; J. E. Jung; Y. W. Jin; Y. J. Park; J. B. You
Appl. Phys. Lett. 80, 4045–4047 (2002)
https://doi.org/10.1063/1.1480104
High frequency components of current fluctuations in semiconductor tunneling barriers
Appl. Phys. Lett. 80, 4048–4050 (2002)
https://doi.org/10.1063/1.1482136
Nanolithography based on patterned metal transfer and its application to organic electronic devices
Appl. Phys. Lett. 80, 4051–4053 (2002)
https://doi.org/10.1063/1.1481980
APPLIED BIOPHYSICS
Protein detection by optical shift of a resonant microcavity
Appl. Phys. Lett. 80, 4057–4059 (2002)
https://doi.org/10.1063/1.1482797
Protein-based integrated optical switching and modulation
Appl. Phys. Lett. 80, 4060–4062 (2002)
https://doi.org/10.1063/1.1481197
INTERDISCIPLINARY AND GENERAL PHYSICS
Tapping mode and elasticity imaging in liquids using an atomic force microscope actuated by acoustic radiation pressure
Appl. Phys. Lett. 80, 4063–4065 (2002)
https://doi.org/10.1063/1.1481183
Topological and chiral matter—Physics and applications
Maia G. Vergniory, Takeshi Kondo, et al.
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Feedback cooling of an insulating high-Q diamagnetically levitated plate
S. Tian, K. Jadeja, et al.