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LASERS, OPTICS, AND OPTOELECTRONICS

Polymer microring lasers with longitudinal optical pumping

S. X. Dou; E. Toussaere; T. Ben-Messaoud; A. Potter; D. Josse; G. Kranzelbinder; J. Zyss

Appl. Phys. Lett. 80, 165–167 (2002) https://doi.org/10.1063/1.1432759

Abstract

View articletitled, Polymer microring lasers with longitudinal optical pumping

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Surface-induced photorefractive-like effect in pure liquid crystals

P. Pagliusi; G. Cipparrone

Appl. Phys. Lett. 80, 168–170 (2002) https://doi.org/10.1063/1.1432765

Abstract

View articletitled, Surface-induced photorefractive-like effect in pure liquid crystals

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Bubble formation due to electrical stress in organic light emitting devices

Lin Ke; Soo-Jin Chua; Keran Zhang; Peng Chen

Appl. Phys. Lett. 80, 171–173 (2002) https://doi.org/10.1063/1.1435064

Abstract

View articletitled, Bubble formation due to electrical stress in organic light emitting devices

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In situ growth monitoring of distributed GaN–AlGaN Bragg reflectors by metalorganic vapor phase epitaxy

H. P. D. Schenk; P. de Mierry; P. Vennéguès; O. Tottereau; M. Laügt; M. Vaille; E. Feltin; B. Beaumont; P. Gibart; S. Fernández; F. Calle

Appl. Phys. Lett. 80, 174–176 (2002) https://doi.org/10.1063/1.1430859

Abstract

View articletitled, In situ growth monitoring of distributed GaN–AlGaN Bragg reflectors by metalorganic vapor phase epitaxy

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Two-photon absorption spectroscopy of ${As}_{2} S_{3}$ glass

Keiji Tanaka

Appl. Phys. Lett. 80, 177–179 (2002) https://doi.org/10.1063/1.1433908

Abstract

View articletitled, Two-photon absorption spectroscopy of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">As</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">S</mi><mrow><mn>3</mn></mrow></msub></math> glass

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High carrier injection optical switch based on two-mode interference in SiGe alloy

Baojun Li; Soo-Jin Chua

Appl. Phys. Lett. 80, 180–182 (2002) https://doi.org/10.1063/1.1432758

Abstract

View articletitled, High carrier injection optical switch based on two-mode interference in SiGe alloy

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Microlensed vertical-cavity surface-emitting laser for stable single fundamental mode operation

Si-Hyun Park; Yeonsang Park; Hyejin Kim; Heonsu Jeon; Seong Mo Hwang; Jeong Kwan Lee; Seung Ho Nam; Byeong Cheon Koh; J. Y. Sohn; D. S. Kim

Appl. Phys. Lett. 80, 183–185 (2002) https://doi.org/10.1063/1.1432744

Abstract

View articletitled, Microlensed vertical-cavity surface-emitting laser for stable single fundamental mode operation

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Frequency up-conversion as a temperature probe of organic opto-electronic devices

John M. Lupton

Appl. Phys. Lett. 80, 186–188 (2002) https://doi.org/10.1063/1.1432766

Abstract

View articletitled, Frequency up-conversion as a temperature probe of organic opto-electronic devices

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Efficient organic light-emitting diodes with undoped active layers based on silole derivatives

Hideyuki Murata; Zakya H. Kafafi; Manabu Uchida

Appl. Phys. Lett. 80, 189–191 (2002) https://doi.org/10.1063/1.1432109

Abstract

View articletitled, Efficient organic light-emitting diodes with undoped active layers based on silole derivatives

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Light propagation in periodic microcavities

Hiromitsu Furukawa; Koji Tenjimbayashi

Appl. Phys. Lett. 80, 192–194 (2002) https://doi.org/10.1063/1.1432752

Abstract

View articletitled, Light propagation in periodic microcavities

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Injection-seeded terahertz-wave parametric generator with wide tunability

Kodo Kawase; Hiroaki Minamide; Kazuhiro Imai; Jun-ichi Shikata; Hiromasa Ito

Appl. Phys. Lett. 80, 195–197 (2002) https://doi.org/10.1063/1.1429299

Abstract

View articletitled, Injection-seeded terahertz-wave parametric generator with wide tunability

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PLASMAS AND ELECTRICAL DISCHARGES

Comparative study of time-resolved K-shell spectra from aluminum plasmas generated by ultrashort laser pulses at 395 and 790 nm

U. Andiel; K. Eidmann; K. Witte; I. Uschmann; E. Förster

Appl. Phys. Lett. 80, 198–200 (2002) https://doi.org/10.1063/1.1432106

Abstract

View articletitled, Comparative study of time-resolved K-shell spectra from aluminum plasmas generated by ultrashort laser pulses at 395 and 790 nm

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Variable temperature study of the passivation of dangling bonds at $Si (100)-2×1$ reconstructed surfaces with H and D

M. C. Hersam; N. P. Guisinger; J. Lee; K. Cheng; J. W. Lyding

Appl. Phys. Lett. 80, 201–203 (2002) https://doi.org/10.1063/1.1431689

Abstract

View articletitled, Variable temperature study of the passivation of dangling bonds at <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">Si</mi><mtext xmlns="">(100)-2×1</mtext></math> reconstructed surfaces with H and D

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$n- GaN$ surface treatments for metal contacts studied via x-ray photoemission spectroscopy

K. A. Rickert; A. B. Ellis; F. J. Himpsel; Jingxi Sun; T. F. Kuech

Appl. Phys. Lett. 80, 204–206 (2002) https://doi.org/10.1063/1.1430024

Abstract

View articletitled, <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">n-</mi><mi mathvariant="normal" xmlns="">GaN</mi></math> surface treatments for metal contacts studied via x-ray photoemission spectroscopy

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Marked enhancement of 320–360 nm ultraviolet emission in quaternary ${In}_{x} {Al}_{y} {Ga}_{1−x−y} N$ with In-segregation effect

Hideki Hirayama; Atsuhiro Kinoshita; Takayoshi Yamabi; Yasushi Enomoto; Akira Hirata; Tsutomu Araki; Yasushi Nanishi; Yoshinobu Aoyagi

Appl. Phys. Lett. 80, 207–209 (2002) https://doi.org/10.1063/1.1433162

Abstract

View articletitled, Marked enhancement of 320–360 nm ultraviolet emission in quaternary <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">In</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mi>y</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>1−x−y</mtext></mrow></msub><mi mathvariant="normal" xmlns="">N</mi></math> with In-segregation effect

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Behind the weak excitonic emission of ZnO quantum dots: $ZnO/Zn(OH)_{2}$ core-shell structure

H. Zhou; H. Alves; D. M. Hofmann; W. Kriegseis; B. K. Meyer; G. Kaczmarczyk; A. Hoffmann

Appl. Phys. Lett. 80, 210–212 (2002) https://doi.org/10.1063/1.1432763

Abstract

View articletitled, Behind the weak excitonic emission of ZnO quantum dots: <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">ZnO/Zn(OH</mi><msub xmlns=""><mi>)</mi><mrow><mn>2</mn></mrow></msub></math> core-shell structure

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Radiation sensitivity reduction in deuterium annealed ${Si–SiO}_{2}$ structures

J. R. Chavez; R. A. B. Devine; W. M. Shedd

Appl. Phys. Lett. 80, 213–215 (2002) https://doi.org/10.1063/1.1428415

Abstract

View articletitled, Radiation sensitivity reduction in deuterium annealed <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Si–SiO</mi><mrow><mn>2</mn></mrow></msub></math> structures

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Defect reduction with quantum dots in GaN grown on sapphire substrates by molecular beam epitaxy

D. Huang; M. A. Reshchikov; F. Yun; T. King; A. A. Baski; H. Morkoç

Appl. Phys. Lett. 80, 216–218 (2002) https://doi.org/10.1063/1.1432445

Abstract

View articletitled, Defect reduction with quantum dots in GaN grown on sapphire substrates by molecular beam epitaxy

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Polarized excimer laser-induced birefringence in silica

N. F. Borrelli; C. M. Smith; J. J. Price; D. C. Allan

Appl. Phys. Lett. 80, 219–221 (2002) https://doi.org/10.1063/1.1433902

Abstract

View articletitled, Polarized excimer laser-induced birefringence in silica

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Growth of GaN free from cracks on a (111)Si substrate by selective metalorganic vapor-phase epitaxy

Y. Honda; Y. Kuroiwa; M. Yamaguchi; N. Sawaki

Appl. Phys. Lett. 80, 222–224 (2002) https://doi.org/10.1063/1.1432764

Abstract

View articletitled, Growth of GaN free from cracks on a (111)Si substrate by selective metalorganic vapor-phase epitaxy

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Surface-modulation-controlled three-dimensional colloidal crystals

Dong Kee Yi; Eun-Mi Seo; Dong-Yu Kim

Appl. Phys. Lett. 80, 225–227 (2002) https://doi.org/10.1063/1.1434313

Abstract

View articletitled, Surface-modulation-controlled three-dimensional colloidal crystals

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Enhanced nitrogen diffusion in 4H-SiC

G. J. Phelps; N. G. Wright; E. G. Chester; C. M. Johnson; A. G. O’Neill; S. Ortolland; A. Horsfall; K. Vassilevski; R. M. Gwilliam; P. G. Coleman; C. P. Burrows

Appl. Phys. Lett. 80, 228–230 (2002) https://doi.org/10.1063/1.1432451

Abstract

View articletitled, Enhanced nitrogen diffusion in 4H-SiC

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Strong localization in InGaN layers with high In content grown by molecular-beam epitaxy

F. B. Naranjo; M. A. Sánchez-Garcı́a; F. Calle; E. Calleja; B. Jenichen; K. H. Ploog

Appl. Phys. Lett. 80, 231–233 (2002) https://doi.org/10.1063/1.1432751

Abstract

View articletitled, Strong localization in InGaN layers with high In content grown by molecular-beam epitaxy

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Optimization of white polychromatic semiconductor lamps

A. Žukauskas; R. Vaicekauskas; F. Ivanauskas; R. Gaska; M. S. Shur

Appl. Phys. Lett. 80, 234–236 (2002) https://doi.org/10.1063/1.1432107

Abstract

View articletitled, Optimization of white polychromatic semiconductor lamps

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Anharmonicity of the C–H stretch mode in SiC: Unambiguous identification of hydrogen–silicon vacancy defect

A. Gali; B. Aradi; D. Heringer; W. J. Choyke; R. P. Devaty; S. Bai

Appl. Phys. Lett. 80, 237–239 (2002) https://doi.org/10.1063/1.1432757

Abstract

View articletitled, Anharmonicity of the C–H stretch mode in SiC: Unambiguous identification of hydrogen–silicon vacancy defect

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Remarkable lattice recovery and low sheet resistance of phosphorus-implanted 4H–SiC $(112̄0)$

Y. Negoro; N. Miyamoto; T. Kimoto; H. Matsunami

Appl. Phys. Lett. 80, 240–242 (2002) https://doi.org/10.1063/1.1432745

Abstract

View articletitled, Remarkable lattice recovery and low sheet resistance of phosphorus-implanted 4H–SiC <math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">(112̄0)</mtext></math>

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Observation of large optical anisotropy and valence band splitting in AlInAs self-assembled lateral quantum wells

S. Francoeur; M. C. Hanna; A. G. Norman; A. Mascarenhas

Appl. Phys. Lett. 80, 243–245 (2002) https://doi.org/10.1063/1.1432754

Abstract

View articletitled, Observation of large optical anisotropy and valence band splitting in AlInAs self-assembled lateral quantum wells

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Electron holographic characterization of electrostatic potential distributions in a transistor sample fabricated by focused ion beam

Zhouguang Wang; Tsukasa Hirayama; Katsuhiro Sasaki; Hiroyasu Saka; Naoko Kato

Appl. Phys. Lett. 80, 246–248 (2002) https://doi.org/10.1063/1.1432746

Abstract

View articletitled, Electron holographic characterization of electrostatic potential distributions in a transistor sample fabricated by focused ion beam

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Electrical transport properties of ${NiSi}_{2}$ layers synthesized by metal vapor vacuum-arc ion implantation: Temperature dependence and two-band model

X. W. Zhang; S. P. Wong; W. Y. Cheung; F. Zhang

Appl. Phys. Lett. 80, 249–251 (2002) https://doi.org/10.1063/1.1432762

Abstract

View articletitled, Electrical transport properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">NiSi</mi><mrow><mn>2</mn></mrow></msub></math> layers synthesized by metal vapor vacuum-arc ion implantation: Temperature dependence and two-band model

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Electronic properties of antidot lattices fabricated by atomic force lithography

A. Dorn; M. Sigrist; A. Fuhrer; T. Ihn; T. Heinzel; K. Ensslin; W. Wegscheider; M. Bichler

Appl. Phys. Lett. 80, 252–254 (2002) https://doi.org/10.1063/1.1432767

Abstract

View articletitled, Electronic properties of antidot lattices fabricated by atomic force lithography

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Crystalline $Si / {SiO}_{2}$ quantum wells

Z. H. Lu; D. Grozea

Appl. Phys. Lett. 80, 255–257 (2002) https://doi.org/10.1063/1.1433166

Abstract

View articletitled, Crystalline <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">Si</mi><mi xmlns="">/</mi><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mn>2</mn></mrow></msub></math> quantum wells

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Donor and acceptor concentrations in degenerate InN

D. C. Look; H. Lu; W. J. Schaff; J. Jasinski; Z. Liliental-Weber

Appl. Phys. Lett. 80, 258–260 (2002) https://doi.org/10.1063/1.1432742

Abstract

View articletitled, Donor and acceptor concentrations in degenerate InN

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Correlation of charge transport to local atomic strain in Si-rich silicon nitride thin films

S. Habermehl; C. Carmignani

Appl. Phys. Lett. 80, 261–263 (2002) https://doi.org/10.1063/1.1433167

Abstract

View articletitled, Correlation of charge transport to local atomic strain in Si-rich silicon nitride thin films

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Electrical isolation of ${Al}_{x} {Ga}_{1−x} As$ by ion irradiation

T. v. Lippen; H. Boudinov; H. H. Tan; C. Jagadish

Appl. Phys. Lett. 80, 264–266 (2002) https://doi.org/10.1063/1.1427422

Abstract

View articletitled, Electrical isolation of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>1−x</mtext></mrow></msub><mi mathvariant="normal" xmlns="">As</mi></math> by ion irradiation

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Free excitons in cubic CdS films

Yoshihiko Kanemitsu; Takehiko Nagai; Takashi Kushida; Seiji Nakamura; Yoichi Yamada; Tsunemasa Taguchi

Appl. Phys. Lett. 80, 267–269 (2002) https://doi.org/10.1063/1.1432750

Abstract

View articletitled, Free excitons in cubic CdS films

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Film thickness dependence of the ${NiSi-to-NiSi}_{2}$ transition temperature in the Ni/Pt/Si(100) system

J. F. Liu; J. Y. Feng; J. Zhu

Appl. Phys. Lett. 80, 270–272 (2002) https://doi.org/10.1063/1.1434311

Abstract

View articletitled, Film thickness dependence of the <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">NiSi-to-NiSi</mi><mrow><mn>2</mn></mrow></msub></math> transition temperature in the Ni/Pt/Si(100) system

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MAGNETISM AND SUPERCONDUCTIVITY

ac transport in ferromagnetic tunnel junctions

S. T. Chui; Liangbin Hu

Appl. Phys. Lett. 80, 273–275 (2002) https://doi.org/10.1063/1.1430504

Abstract

View articletitled, ac transport in ferromagnetic tunnel junctions

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Effect of the second-order anistropy constant on the transverse susceptibility of uniaxial ferromagnets

L. Spinu; Al. Stancu; C. J. O’Connor; H. Srikanth

Appl. Phys. Lett. 80, 276–278 (2002) https://doi.org/10.1063/1.1428626

Abstract

View articletitled, Effect of the second-order anistropy constant on the transverse susceptibility of uniaxial ferromagnets

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Characterization of the magnetic modification of Co/Pt multilayer films by ${He}^{+},$ ${Ar}^{+},$ and ${Ga}^{+}$ ion irradiation

C. T. Rettner; S. Anders; J. E. E. Baglin; T. Thomson; B. D. Terris

Appl. Phys. Lett. 80, 279–281 (2002) https://doi.org/10.1063/1.1432108

Abstract

View articletitled, Characterization of the magnetic modification of Co/Pt multilayer films by <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">He</mi><mrow><mi>+</mi></mrow></msup><mi xmlns="">,</mi></math> <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">Ar</mi><mrow><mi>+</mi></mrow></msup><mi xmlns="">,</mi></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mi>+</mi></mrow></msup></math> ion irradiation

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Surface magnetic anisotropy of Co(0001) and effects of ultrathin Cu overlayers studied by in situ spin-wave Brillouin light scattering

Kyoko Hyomi; Akihiro Murayama; Yasuo Oka; Uli Hiller; Charles M. Falco

Appl. Phys. Lett. 80, 282–284 (2002) https://doi.org/10.1063/1.1431694

Abstract

View articletitled, Surface magnetic anisotropy of Co(0001) and effects of ultrathin Cu overlayers studied by in situ spin-wave Brillouin light scattering

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Do ballistic channels contribute to the magnetoresistance in magnetic tunnel junctions?

E. P. Price; David J. Smith; R. C. Dynes; A. E. Berkowitz

Appl. Phys. Lett. 80, 285–287 (2002) https://doi.org/10.1063/1.1430861

Abstract

View articletitled, Do ballistic channels contribute to the magnetoresistance in magnetic tunnel junctions?

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Low-temperature fabrication of $L 1_{0}$ ordered FePt alloy by alternate monatomic layer deposition

T. Shima; T. Moriguchi; S. Mitani; K. Takanashi

Appl. Phys. Lett. 80, 288–290 (2002) https://doi.org/10.1063/1.1432446

Abstract

View articletitled, Low-temperature fabrication of <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">L</mi><msub xmlns=""><mn>1</mn><mrow><mn>0</mn></mrow></msub></math> ordered FePt alloy by alternate monatomic layer deposition

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Reactivity of ${MgB}_{2}$ with common substrate and electronic materials

T. He; R. J. Cava; John M. Rowell

Appl. Phys. Lett. 80, 291–293 (2002) https://doi.org/10.1063/1.1433915

Abstract

View articletitled, Reactivity of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">MgB</mi><mrow><mn>2</mn></mrow></msub></math> with common substrate and electronic materials

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DIELECTRICS AND FERROELECTRICITY

High-k titanium silicate dielectric thin films grown by pulsed-laser deposition

D. K. Sarkar; E. Desbiens; M. A. El Khakani

Appl. Phys. Lett. 80, 294–296 (2002) https://doi.org/10.1063/1.1435072

Abstract

View articletitled, High-k titanium silicate dielectric thin films grown by pulsed-laser deposition

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Band gap and band discontinuities at crystalline $\Pr_{2} O_{3} / Si (001)$ heterojunctions

H. J. Osten; J. P. Liu; H. J. Müssig

Appl. Phys. Lett. 80, 297–299 (2002) https://doi.org/10.1063/1.1433909

Abstract

View articletitled, Band gap and band discontinuities at crystalline <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Pr</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>3</mn></mrow></msub><mi xmlns="">/</mi><mi mathvariant="bold" xmlns="">Si</mi><mtext xmlns="">(001)</mtext></math> heterojunctions

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NANOSCALE SCIENCE AND DESIGN

Coupled technique to produce two-dimensional superlattices of nanoparticles

C. Renard; C. Ricolleau; E. Fort; S. Besson; T. Gacoin; J.-P. Boilot

Appl. Phys. Lett. 80, 300–302 (2002) https://doi.org/10.1063/1.1429749

Abstract

View articletitled, Coupled technique to produce two-dimensional superlattices of nanoparticles

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Pyrolysis approach to the synthesis of gallium nitride nanorods

Wei-Qiang Han; Alex Zettl

Appl. Phys. Lett. 80, 303–305 (2002) https://doi.org/10.1063/1.1431401

Abstract

View articletitled, Pyrolysis approach to the synthesis of gallium nitride nanorods

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Ordered growth of nanocrystals via a morphological instability

J. J. Eggleston; P. W. Voorhees

Appl. Phys. Lett. 80, 306–308 (2002) https://doi.org/10.1063/1.1429757

Abstract

View articletitled, Ordered growth of nanocrystals via a morphological instability

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Lead oxide nanobelts and phase transformation induced by electron beam irradiation

Z. W. Pan; Z. R. Dai; Z. L. Wang

Appl. Phys. Lett. 80, 309–311 (2002) https://doi.org/10.1063/1.1432749

Abstract

View articletitled, Lead oxide nanobelts and phase transformation induced by electron beam irradiation

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Rapid sub-diffraction-limit laser micro/nanoprocessing in a threshold material system

Tomokazu Tanaka; Hong-Bo Sun; Satoshi Kawata

Appl. Phys. Lett. 80, 312–314 (2002) https://doi.org/10.1063/1.1432450

Abstract

View articletitled, Rapid sub-diffraction-limit laser micro/nanoprocessing in a threshold material system

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Theoretical study of single molecule fluorescence in a metallic nanocavity

Jörg Enderlein

Appl. Phys. Lett. 80, 315–317 (2002) https://doi.org/10.1063/1.1434314

Abstract

View articletitled, Theoretical study of single molecule fluorescence in a metallic nanocavity

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Hydrogen in mechanically prepared nanostructured h-BN: a critical comparison with that in nanostructured graphite

P. Wang; S. Orimo; T. Matsushima; H. Fujii; G. Majer

Appl. Phys. Lett. 80, 318–320 (2002) https://doi.org/10.1063/1.1432447

Abstract

View articletitled, Hydrogen in mechanically prepared nanostructured h-BN: a critical comparison with that in nanostructured graphite

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Nanometer-spaced electrodes with calibrated separation

Y. V. Kervennic; H. S. J. Van der Zant; A. F. Morpurgo; L. Gurevich; L. P. Kouwenhoven

Appl. Phys. Lett. 80, 321–323 (2002) https://doi.org/10.1063/1.1433914

Abstract

View articletitled, Nanometer-spaced electrodes with calibrated separation

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Multijunction carbon nanotube network

Jyh-Ming Ting; Chi-Chih Chang

Appl. Phys. Lett. 80, 324–325 (2002) https://doi.org/10.1063/1.1432442

Abstract

View articletitled, Multijunction carbon nanotube network

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Selective growth of single InAs quantum dots using strain engineering

B. C. Lee; S. D. Lin; C. P. Lee; H. M. Lee; J. C. Wu; K. W. Sun

Appl. Phys. Lett. 80, 326–328 (2002) https://doi.org/10.1063/1.1433169

Abstract

View articletitled, Selective growth of single InAs quantum dots using strain engineering

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Optimization of tin dioxide nanosticks faceting for the improvement of palladium nanocluster epitaxy

J. Arbiol; A. Cirera; F. Peiró; A. Cornet; J. R. Morante; J. J. Delgado; J. J. Calvino

Appl. Phys. Lett. 80, 329–331 (2002) https://doi.org/10.1063/1.1433903

Abstract

View articletitled, Optimization of tin dioxide nanosticks faceting for the improvement of palladium nanocluster epitaxy

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DEVICE PHYSICS

Organic insulator/semiconductor heterostructure monolayer transistors

J. H. Schön; Z. Bao

Appl. Phys. Lett. 80, 332–333 (2002) https://doi.org/10.1063/1.1431697

Abstract

View articletitled, Organic insulator/semiconductor heterostructure monolayer transistors

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INTERDISCIPLINARY AND GENERAL PHYSICS

Seismo-electrical effects: Experiments and field measurements

H. Röder; R. Büttner; B. Zimanowski

Appl. Phys. Lett. 80, 334–336 (2002) https://doi.org/10.1063/1.1431693

Abstract

View articletitled, Seismo-electrical effects: Experiments and field measurements

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ERRATA

Erratum: “Interpretation of double x-ray diffraction peaks from InGaN layers” [Appl. Phys. Lett. 79, 1432 (2001)]

S. Pereira; M. R. Correia; E. Pereira; K. P. O’Donnell; E. Alves; A. D. Sequeira; N. Franco

Appl. Phys. Lett. 80, 337 (2002) https://doi.org/10.1063/1.1430029

View articletitled, Erratum: “Interpretation of double x-ray diffraction peaks from InGaN layers” [Appl. Phys. Lett. 79, 1432 (2001)]

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Erratum: “Very-high-efficiency double-heterostructure copper ${phthalocyanine/C}_{60}$ photovoltaic cells” [Appl. Phys. Lett. 79, 126 (2001)]

P. Peumans; S. R. Forrest

Appl. Phys. Lett. 80, 338 (2002) https://doi.org/10.1063/1.1432440

View articletitled, Erratum: “Very-high-efficiency double-heterostructure copper <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">phthalocyanine/C</mi><mrow><mn>60</mn></mrow></msub></math> photovoltaic cells” [Appl. Phys. Lett. 79, 126 (2001)]

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