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Volume 80, Issue 19

13 May 2002

Applied Physics Letters Cover Image for Volume 80, Issue 19

ISSN 0003-6951

EISSN 1077-3118

In this Issue

LASERS, OPTICS, AND OPTOELECTRONICS
PLASMAS AND ELECTRICAL DISCHARGES
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
ELECTRONIC TRANSPORT AND SEMICONDUCTORS
MAGNETISM AND SUPERCONDUCTIVITY
DIELECTRICS AND FERROELECTRICITY
NANOSCALE SCIENCE AND DESIGN
DEVICE PHYSICS
INTERDISCIPLINARY AND GENERAL PHYSICS
ERRATA

LASERS, OPTICS, AND OPTOELECTRONICS

Gain trimming of the resonant characteristics in vertically coupled InP microdisk switches

Kostadin Djordjev; Seung-June Choi; Sang-Jun Choi; P. D. Dapkus

Appl. Phys. Lett. 80, 3467–3469 (2002) https://doi.org/10.1063/1.1476701

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Organic light-emitting devices for illumination quality white light

Anil R. Duggal; J. J. Shiang; Christian M. Heller; Donald F. Foust

Appl. Phys. Lett. 80, 3470–3472 (2002) https://doi.org/10.1063/1.1478786

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Optical waveguides formed in ${Nd:YVO}_{4}$ by MeV ${Si}^{+}$ implantation

Feng Chen; Xue-Lin Wang; Ke-Ming Wang; Qing-Ming Lu; Ding-Yu Shen

Appl. Phys. Lett. 80, 3473–3475 (2002) https://doi.org/10.1063/1.1477939

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Very-low-threshold photonic band-edge lasers from free-standing triangular photonic crystal slabs

Han-Youl Ryu; Soon-Hong Kwon; Yong-Jae Lee; Yong-Hee Lee; Jeong-Soo Kim

Appl. Phys. Lett. 80, 3476–3478 (2002) https://doi.org/10.1063/1.1477617

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Near-field second-harmonic generation at a metal tip apex

Satoshi Takahashi; Anatoly V. Zayats

Appl. Phys. Lett. 80, 3479–3481 (2002) https://doi.org/10.1063/1.1478780

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Tunnel injection ${In}_{0.4} {Ga}_{0.6} As/GaAs$ quantum dot lasers with 15 GHz modulation bandwidth at room temperature

P. Bhattacharya; S. Ghosh

Appl. Phys. Lett. 80, 3482–3484 (2002) https://doi.org/10.1063/1.1478129

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Praseodymium oxide coated anode for organic light-emitting diode

Chengfeng Qiu; Haiying Chen; Zhiliang Xie; Man Wong; Hoi Sing Kwok

Appl. Phys. Lett. 80, 3485–3487 (2002) https://doi.org/10.1063/1.1476712

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Measurement of transverse electric and transverse magnetic spontaneous emission and gain in tensile strained GaInP laser diodes

G. M. Lewis; P. M. Smowton; P. Blood; G. Jones; S. Bland

Appl. Phys. Lett. 80, 3488–3490 (2002) https://doi.org/10.1063/1.1476396

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Evidence for braggoriton excitations in opal photonic crystals infiltrated with highly polarizable dyes

N. Eradat; A. Y. Sivachenko; M. E. Raikh; Z. V. Vardeny; A. A. Zakhidov; R. H. Baughman

Appl. Phys. Lett. 80, 3491–3493 (2002) https://doi.org/10.1063/1.1479197

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Enhancement of the coupling efficiency in optical fibers using a two-beam optical interference

M. Kamel Amara; Noureddine Melikechi

Appl. Phys. Lett. 80, 3494–3496 (2002) https://doi.org/10.1063/1.1479195

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High-power 400-nm-band AlGaInN-based laser diodes with low aspect ratio

T. Asano; M. Takeya; T. Tojyo; T. Mizuno; S. Ikeda; K. Shibuya; T. Hino; S. Uchida; M. Ikeda

Appl. Phys. Lett. 80, 3497–3499 (2002) https://doi.org/10.1063/1.1478157

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Fabrication of frequency-selective surfaces using microlens projection photolithography

Ming-Hsien Wu; Kateri E. Paul; Jerry Yang; George M. Whitesides

Appl. Phys. Lett. 80, 3500–3502 (2002) https://doi.org/10.1063/1.1477941

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Polarization switching in optical microsphere resonator

A. Yu. Smirnov; S. N. Rashkeev; A. M. Zagoskin

Appl. Phys. Lett. 80, 3503–3505 (2002) https://doi.org/10.1063/1.1477277

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Design of short-cavity, high-brightness 980 nm laser diodes with distributed phase correction

Y. Zhang; J. J. Lim; T. M. Benson; P. Sewell; S. Dods; E. C. Larkins

Appl. Phys. Lett. 80, 3506–3508 (2002) https://doi.org/10.1063/1.1474618

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Molecular-beam epitaxy growth of high-quality active regions with strained ${In}_{x} {Ga}_{1−x} As$ quantum wells and lattice-matched ${Al}_{x} {Ga}_{y} {In}_{(1−x−y)} As$ barriers using submonolayer superlattices

M. H. M. Reddy; A. Huntington; D. Buell; R. Koda; E. Hall; L. A. Coldren

Appl. Phys. Lett. 80, 3509–3511 (2002) https://doi.org/10.1063/1.1474598

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Stimulated terahertz emission from group-V donors in silicon under intracenter photoexcitation

V. N. Shastin; R. Kh. Zhukavin; E. E. Orlova; S. G. Pavlov; M. H. Rümmeli; H.-W. Hübers; J. N. Hovenier; T. O. Klaassen; H. Riemann; I. V. Bradley; A. F. G. van der Meer

Appl. Phys. Lett. 80, 3512–3514 (2002) https://doi.org/10.1063/1.1476955

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PLASMAS AND ELECTRICAL DISCHARGES

Thermodynamic properties of highly undercooled liquid TiAl alloy

N. Wang; B. Wei

Appl. Phys. Lett. 80, 3515–3517 (2002) https://doi.org/10.1063/1.1478777

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Optical properties of ZnO thin films: Ion layer gas reaction compared to sputter deposition

M. Rebien; W. Henrion; M. Bär; Ch.-H. Fischer

Appl. Phys. Lett. 80, 3518–3520 (2002) https://doi.org/10.1063/1.1479211

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Influence of GaN domain size on the electron mobility of two-dimensional electron gases in AlGaN/GaN heterostructures determined by x-ray reflectivity and diffraction

Zhenyang Zhong; O. Ambacher; A. Link; V. Holy; J. Stangl; R. T. Lechner; T. Roch; G. Bauer

Appl. Phys. Lett. 80, 3521–3523 (2002) https://doi.org/10.1063/1.1479206

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Microscopic correlation of redshifted luminescence and surface defects in thick ${In}_{x} {Ga}_{1−x} N$ layers

F. Bertram; S. Srinivasan; L. Geng; F. A. Ponce; T. Riemann; J. Christen

Appl. Phys. Lett. 80, 3524–3526 (2002) https://doi.org/10.1063/1.1479199

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Separation of optical anisotropies by angular dependent reflection anisotropy spectroscopy

B. F. Macdonald; R. J. Cole

Appl. Phys. Lett. 80, 3527–3529 (2002) https://doi.org/10.1063/1.1478784

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Fluorine interaction with point defects, boron, and arsenic in ion-implanted Si

Ali Mokhberi; Reza Kasnavi; Peter B. Griffin; James D. Plummer

Appl. Phys. Lett. 80, 3530–3532 (2002) https://doi.org/10.1063/1.1479458

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Magneto-thermal shape memory effect in Ni–Mn–Ga

N. Glavatska; I. Glavatsky; G. Mogilny; V. Gavriljuk

Appl. Phys. Lett. 80, 3533–3535 (2002) https://doi.org/10.1063/1.1478130

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Far-infrared absorption in Sb-doped Ge epilayers near the metal–insulator transition

Jordana Bandaru; Jeffrey W. Beeman; Eugene E. Haller

Appl. Phys. Lett. 80, 3536–3538 (2002) https://doi.org/10.1063/1.1479203

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Photoluminescence study of hydrogen passivation in ${InAs}_{1−x} N_{x} / InGaAs$ single-quantum well on InP

Y. Y. Ke; M. H. Ya; Y. F. Chen; J. S. Wang; H. H. Lin

Appl. Phys. Lett. 80, 3539–3541 (2002) https://doi.org/10.1063/1.1476383

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Crack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattices for strain management

J. P. Zhang; H. M. Wang; M. E. Gaevski; C. Q. Chen; Q. Fareed; J. W. Yang; G. Simin; M. Asif Khan

Appl. Phys. Lett. 80, 3542–3544 (2002) https://doi.org/10.1063/1.1477620

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In-doped ${SrTiO}_{3}$ ceramic thin films

Shouyu Dai; Huibin Lu; Fan Chen; Zhenghao Chen; Z. Y. Ren; D. H. L. Ng

Appl. Phys. Lett. 80, 3545–3547 (2002) https://doi.org/10.1063/1.1478148

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Electrical transport properties of individual gallium nitride nanowires synthesized by chemical-vapor-deposition

Jae-Ryoung Kim; Hye Mi So; Jong Wan Park; Ju-Jin Kim; Jinhee Kim; Cheol Jin Lee; Seung Chul Lyu

Appl. Phys. Lett. 80, 3548–3550 (2002) https://doi.org/10.1063/1.1478158

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Direct measurement of the polarization charge in AlGaN/GaN heterostructures using capacitance–voltage carrier profiling

E. J. Miller; E. T. Yu; C. Poblenz; C. Elsass; J. S. Speck

Appl. Phys. Lett. 80, 3551–3553 (2002) https://doi.org/10.1063/1.1477275

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Abnormal dependence of contact resistivity on hole concentration in nonalloyed ohmic contacts to $p- GaN$

Joon Seop Kwak; Ok-Hyun Nam; Yongjo Park

Appl. Phys. Lett. 80, 3554–3556 (2002) https://doi.org/10.1063/1.1478154

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Hall mobility enhancement caused by annealing of ${Si}_{0.2} {Ge}_{0.8} / {Si}_{0.7} {Ge}_{0.3} / Si (001)$ p-type modulation-doped heterostructures

M. Myronov; P. J. Phillips; T. E. Whall; E. H. C. Parker

Appl. Phys. Lett. 80, 3557–3559 (2002) https://doi.org/10.1063/1.1478779

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Dislocation-free formation of relaxed SiGe-on-insulator layers

T. Tezuka; N. Sugiyama; S. Takagi; T. Kawakubo

Appl. Phys. Lett. 80, 3560–3562 (2002) https://doi.org/10.1063/1.1479457

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MAGNETISM AND SUPERCONDUCTIVITY

In situ growth of superconducting ${MgB}_{2}$ thin films with preferential orientation by molecular-beam epitaxy

W. Jo; J-U. Huh; T. Ohnishi; A. F. Marshall; M. R. Beasley; R. H. Hammond

Appl. Phys. Lett. 80, 3563–3565 (2002) https://doi.org/10.1063/1.1478151

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Strong reduction of thermally activated flux jump rate in superconducting thin films by nanodot-induced pinning centers

A. Crisan; P. Badica; S. Fujiwara; J. C. Nie; A. Sundaresan; Y. Tanaka; H. Ihara

Appl. Phys. Lett. 80, 3566–3568 (2002) https://doi.org/10.1063/1.1478782

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Properties of superconducting ${MgB}_{2}$ single crystal grown by a modified flux method

Yong Chan Cho; Sang Eon Park; Se-Young Jeong; Chae-Ryong Cho; Bong Jun Kim; Young Cheol Kim; Hwa Shik Youn

Appl. Phys. Lett. 80, 3569–3571 (2002) https://doi.org/10.1063/1.1479198

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DIELECTRICS AND FERROELECTRICITY

High-piezoelectric behavior of $c$ -axis-oriented lead zirconate titanate thin films with composition near the morphotropic phase boundary

Desheng Fu; Hisao Suzuki; Takeshi Ogawa; Kenji Ishikawa

Appl. Phys. Lett. 80, 3572–3574 (2002) https://doi.org/10.1063/1.1477619

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Water absorption and interface reactivity of yttrium oxide gate dielectrics on silicon

D. Niu; R. W. Ashcraft; G. N. Parsons

Appl. Phys. Lett. 80, 3575–3577 (2002) https://doi.org/10.1063/1.1477268

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Enhanced dielectric properties of low-temperature sintered ${SrBi}_{2} {Nb}_{2} O_{9} / Ag$ composites

Can Wang; Q. F. Fang; Z. G. Zhu

Appl. Phys. Lett. 80, 3578–3580 (2002) https://doi.org/10.1063/1.1477616

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Large nonlinear dielectric properties of artificial ${BaTiO}_{3} / {SrTiO}_{3}$ superlattices

Juho Kim; Youngnam Kim; Young Sung Kim; Jaichan Lee; Leejun Kim; Donggeun Jung

Appl. Phys. Lett. 80, 3581–3583 (2002) https://doi.org/10.1063/1.1477934

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Evolution of Rayleigh constant in fatigued lead zirconate titanate capacitors

J. L. Sun; J. Chen; X. J. Meng; J. Yu; L. X. Bo; S. L. Guo; J. H. Chu

Appl. Phys. Lett. 80, 3584–3586 (2002) https://doi.org/10.1063/1.1478781

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Water-induced degradation in lead zirconate titanate piezoelectric ceramics

W. P. Chen; H. L. W. Chan; F. C. H. Yiu; K. M. W. Ng; P. C. K. Liu

Appl. Phys. Lett. 80, 3587–3589 (2002) https://doi.org/10.1063/1.1479205

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Raman characterization of boron carbonitride nanotubes

C. Y. Zhi; X. D. Bai; E. G. Wang

Appl. Phys. Lett. 80, 3590–3592 (2002) https://doi.org/10.1063/1.1479207

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Correlation between internal stress and ferroelectric fatigue in ${Bi}_{4−x} {La}_{x} {Ti}_{3} O_{12}$ thin films

Jung-Kun Lee; Chang-Hoon Kim; Hee-Sang Suh; Kug-Sun Hong

Appl. Phys. Lett. 80, 3593–3595 (2002) https://doi.org/10.1063/1.1477272

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Sensitivity in extracting static dielectric constants from multiple film stacks

A. H. Mueller; N. A. Suvorova; E. A. Irene

Appl. Phys. Lett. 80, 3596–3598 (2002) https://doi.org/10.1063/1.1478159

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Low-temperature integration of lead-based ferroelectric capacitors on Si with diffusion barrier layer

B. T. Liu; K. Maki; S. Aggarwal; B. Nagaraj; V. Nagarajan; L. Salamanca-Riba; R. Ramesh; A. M. Dhote; O. Auciello

Appl. Phys. Lett. 80, 3599–3601 (2002) https://doi.org/10.1063/1.1477281

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NANOSCALE SCIENCE AND DESIGN

Electron field emission from boron-nitride nanofilms

Takashi Sugino; Chiharu Kimura; Tomohide Yamamoto

Appl. Phys. Lett. 80, 3602–3604 (2002) https://doi.org/10.1063/1.1477622

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Photoluminescence properties of ${Eu}^{3+}$ -doped ZnS nanocrystals prepared in a water/methanol solution

S. C. Qu; W. H. Zhou; F. Q. Liu; N. F. Chen; Z. G. Wang; H. Y. Pan; D. P. Yu

Appl. Phys. Lett. 80, 3605–3607 (2002) https://doi.org/10.1063/1.1478152

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Cerium-ion-doped yttrium aluminum garnet nanophosphors prepared through sol-gel pyrolysis for luminescent lighting

Chung-Hsin Lu; R. Jagannathan

Appl. Phys. Lett. 80, 3608–3610 (2002) https://doi.org/10.1063/1.1475772

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Synthesis of boron nitride nanowires

K. F. Huo; Z. Hu; F. Chen; J. J. Fu; Y. Chen; B. H. Liu; J. Ding; Z. L. Dong; T. White

Appl. Phys. Lett. 80, 3611–3613 (2002) https://doi.org/10.1063/1.1479213

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Nanoembossing of thermoplastic polymers for microfluidic applications

V. Studer; A. Pépin; Y. Chen

Appl. Phys. Lett. 80, 3614–3616 (2002) https://doi.org/10.1063/1.1479202

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Nanomechanical resonant structures as tunable passive modulators of light

L. Sekaric; M. Zalalutdinov; S. W. Turner; A. T. Zehnder; J. M. Parpia; H. G. Craighead

Appl. Phys. Lett. 80, 3617–3619 (2002) https://doi.org/10.1063/1.1479209

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Field emission from crystalline copper sulphide nanowire arrays

Jun Chen; S. Z. Deng; N. S. Xu; Suhua Wang; Xiaogang Wen; Shihe Yang; Chunlei Yang; Jiannong Wang; Weikun Ge

Appl. Phys. Lett. 80, 3620–3622 (2002) https://doi.org/10.1063/1.1478149

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Evolution of Ge/Si(100) island morphology at high temperature

Yangting Zhang; Margaret Floyd; K. P. Driver; Jeff Drucker; P. A. Crozier; David J. Smith

Appl. Phys. Lett. 80, 3623–3625 (2002) https://doi.org/10.1063/1.1479204

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Surface-plasmon-resonance-induced absorption of a metal–oxide nanoparticle composite

J. P. Zhao; M. Lu; Z. Y. Chen; J. W. Rabalais

Appl. Phys. Lett. 80, 3626–3628 (2002) https://doi.org/10.1063/1.1477935

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InAs self-assembled quantum-dot lasers grown on (100) InP

C. Nı̀. Allen; P. J. Poole; P. Marshall; J. Fraser; S. Raymond; S. Fafard

Appl. Phys. Lett. 80, 3629–3631 (2002) https://doi.org/10.1063/1.1479200

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DEVICE PHYSICS

Carbon reactivation kinetics in the base of heterojunction GaInP–GaAs bipolar transistors

J. Mimila-Arroyo; S. W. Bland; J. Chevallier

Appl. Phys. Lett. 80, 3632–3634 (2002) https://doi.org/10.1063/1.1478156

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Controllable alignment of nematic liquid crystals around microscopic posts: Stabilization of multiple states

Stephen Kitson; Adrian Geisow

Appl. Phys. Lett. 80, 3635–3637 (2002) https://doi.org/10.1063/1.1478778

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Simple phase bias for superconducting circuits

J. B. Majer; J. R. Butcher; J. E. Mooij

Appl. Phys. Lett. 80, 3638–3640 (2002) https://doi.org/10.1063/1.1478150

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Improved efficiency by a graded emissive region in organic light-emitting diodes

Dongge Ma; C. S. Lee; S. T. Lee; L. S. Hung

Appl. Phys. Lett. 80, 3641–3643 (2002) https://doi.org/10.1063/1.1479450

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INTERDISCIPLINARY AND GENERAL PHYSICS

A class of boron-rich solid-state neutron detectors

B. W. Robertson; S. Adenwalla; A. Harken; P. Welsch; J. I. Brand; P. A. Dowben; J. P. Claassen

Appl. Phys. Lett. 80, 3644–3646 (2002) https://doi.org/10.1063/1.1477942

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Depth and range shifting of a focal spot using a time-reversal mirror in an acoustic waveguide

Stéphane Conti; Philippe Roux; Mathias Fink

Appl. Phys. Lett. 80, 3647–3649 (2002) https://doi.org/10.1063/1.1479208

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ERRATA

Erratum: “X-ray photoelectron spectroscopy study of irradiation-induced amorphization of ${Gd}_{2} {Ti}_{2} O_{7} ”$ [Appl. Phy. Lett. 79, 1989 (2001)]

J. Chen; J. Lian; L. M. Wang; R. C. Ewing; L. A. Boatner

Appl. Phys. Lett. 80, 3650 (2002) https://doi.org/10.1063/1.1472474

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